Showing 1–16 of 16 results for author: Kim, M J

Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics

Authors: In Hak Lee, Byoung Ki Choi, Hyuk ** Kim, Min Jay Kim, Hu Young Jeong, Jong Hoon Lee, Seung-Young Park, Younghun Jo, Chanki Lee, Jun Woo Choi, Seong Won Cho, Suyuon Lee, Younghak Kim, Beom Hyun Kim, Kyeong Jun Lee, ** Eun Heo, Seo Hyoung Chang, Feng** Li, Bheema Lingam Chittari, Jeil Jung, Young Jun Chang

Abstract: Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}… ▽ More Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for develo** room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds. △ Less

Submitted 5 April, 2021; originally announced April 2021.

Comments: 30 pages, 6 figures, accepted in ACS Applied Nano Materials

Electronic structure and charge-density wave transition in monolayer VS_{2}

Authors: Hyuk ** Kim, Byoung Ki Choi, In Hak Lee, Min Jay Kim, Seung-Hyun Chun, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Young Jun Chang

Abstract: Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measure… ▽ More Vanadium disulfide (VS_{2}) attracts elevated interests for its charge-density wave (CDW) phase transition, ferromagnetism, and catalytic reactivity, but the electronic structure of monolayer has not been well understood yet. Here we report synthesis of epitaxial 1T VS_{2} monolayer on bilayer graphene grown by molecular-beam epitaxy (MBE). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal that Fermi surface with six elliptical pockets centered at the M points shows gap opening at low temperature. Temperature-dependence of the gap size suggests existence of CDW phase transition above room temperature. Our observations provide important evidence to understand the strongly correlated electron physics and the related surface catalytic properties in two-dimensional transition-metal dichalcogenides (TMDCs). △ Less

Submitted 5 April, 2021; originally announced April 2021.

Comments: 25 pages, 4 figures, accepted in Current Applied Physics

Superconductivity emerging from a stripe charge order in IrTe2 nanoflakes

Authors: Sungyu Park, So Young Kim, Hyoung Kug Kim, Min Jeong Kim, Hoon Kim, Gyu Seung Choi, C. J. Won, Sooran Kim, Kyoo Kim, Evgeny F. Talantsev, Kenji Watanabe, Takashi Taniguchi, Sang-Wook Cheong, B. J. Kim, H. W. Yeom, Jonghwan Kim, Tae-Hwan Kim, Jun Sung Kim

Abstract: Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centred at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario that fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity.… ▽ More Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centred at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario that fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity. Here we present a contrary example, found in IrTe2 nanoflakes of which the superconducting dome is identified well inside the parent stripe charge ordering phase in the thickness-dependent phase diagram. The coexisting stripe charge order in IrTe2 nanoflakes significantly increases the out-of-plane coherence length and the coupling strength of superconductivity, in contrast to the doped bulk IrTe2. These findings clarify that the inherent instabilities of the parent stripe phaseare sufficient to induce superconductivity in IrTe2 without its complete or partial melting. Our study highlights the thickness control as an effective means to unveil intrinsic phase diagrams of correlated vdW materials. △ Less

Submitted 26 September, 2020; originally announced September 2020.

Comments: 20 pages, 4 Figures

Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth

Authors: Hanlin Wu, Sheng Li, Zheng Wu, Xiqu Wang, Gareth A. Ofenstein, Sunah Kwon, Moon J. Kim, Paul C. W. Chu, Bing Lv

Abstract: In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known α-phase ThCr2Si2-type structure (Z=2), a new polymorphic phase of BaCu2As2 (\b{eta} phase) with a much larger c lattice parameter (Z=10), which could be considered an intergrowth of the ThCr2Si2- and CaBe2Ge2-typ… ▽ More In this work, we have thoroughly studied the effects of flux composition and temperature on the crystal growth of the BaCu2As2 compound. While Pb and CuAs self-flux produce the well-known α-phase ThCr2Si2-type structure (Z=2), a new polymorphic phase of BaCu2As2 (\b{eta} phase) with a much larger c lattice parameter (Z=10), which could be considered an intergrowth of the ThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth. We have characterized this structure through single-crystal X-ray diffraction, transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) studies. Furthermore, we compare this new polymorphic intergrowth structure with the α-phase BaCu2As2 (ThCr2Si2 type with Z=2) and the \b{eta}-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types with Z=6), both with the same space group I4/mmm. Electrical transport studies reveal p-type carriers and magnetoresistivity up to 22% at 5 K and under a magnetic field of 7 T. Our work suggests a new route for the discovery of new polymorphic structures through flux and temperature control during material synthesis. △ Less

Submitted 20 August, 2020; originally announced August 2020.

Comments: 15 pages, 4 figures

Journal ref: Crystal Growth & Design 2020

Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires

Authors: **g-Kai Qin, Pai-Ying Liao, Mengwei Si, Shiyuan Gao, Gang Qiu, Jie Jian, Qingxiao Wang, Si-Qi Zhang, Shouyuan Huang, Adam Charnas, Yixiu Wang, Moon J. Kim, Wenzhuo Wu, Xianfan Xu, Hai-Yan Wang, Li Yang, Yoke Khin Yap, Peide D. Ye

Abstract: Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the app… ▽ More Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physical and electronic properties than bulk tellurium. Here we show that few-chain and single-chain van der Waals tellurium nanowires can be isolated using carbon nanotube and boron nitride nanotube encapsulation. With the approach, the number of atomic chains can be controlled by the inner diameter of the nanotube. The Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases. Compared with bare tellurium nanowires on SiO2, nanowires encapsulated in boron nitride nanotubes exhibit a dramatically enhanced current-carrying capacity, with a current density of 1.5*10^8 A cm-2, which exceeds that of most semiconducting nanowires. We also use our tellurium nanowires encapsulated in boron nitride nanotubes to create field-effect transistors that have a diameter of only 2 nm. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Comments: 45 pages, 23 figures. Nature Electronics, to be published

Atomically Controlled Tunable Do** in High Performance WSe2 Devices

Authors: Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi, Rafik Addou, Qingxiao Wang, Moon J. Kim, Robert M. Wallace, Zhihong Chen

Abstract: Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling. However, it is widely acknowledged that substantial contact resistance associated with the contact-TMD interface has impeded device performance to a large extent.… ▽ More Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling. However, it is widely acknowledged that substantial contact resistance associated with the contact-TMD interface has impeded device performance to a large extent. It has been discovered that O2 plasma treatment can convert WSe2 into WO3-x and substantially improve contact resistances of p-type WSe2 devices by strong do** induced thinner depletion width. In this paper, we carefully study the temperature dependence of this conversion, demonstrating an oxidation process with a precise monolayer control at room temperature and multilayer conversion at elevated temperatures. Furthermore, the lateral oxidation of WSe2 under the contact revealed by HR-STEM leads to potential unpinning of the metal Fermi level and Schottky barrier lowering, resulting in lower contact resistances. The p-do** effect is attributed to the high electron affinity of the formed WO3-x layer on top of the remaining WSe2 channel, and the do** level is found to be dependent on the WO3-x thickness that is controlled by the temperature. Comprehensive materials and electrical characterizations are presented, with a low contact resistance of ~528 ohm-um and record high on-state current of 320 uA/um at -1V bias being reported. △ Less

Submitted 18 October, 2019; originally announced October 2019.

Comments: 23 pages, 5 figures, 1 table

Journal ref: Adv. Electron. Mater. 2020, 1901304

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Authors: Chun-Li Lo, Massimo Catalano, Ava Khosravi, Wanying Ge, Yu** Ji, Dmitry Y. Zemlyanov, Luhua Wang, Rafik Addou, Yuanyue Liu, Robert M. Wallace, Moon J. Kim, Zhihong Chen

Abstract: The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultra-scaled interconnect wil… ▽ More The interconnect half-pitch size will reach ~20 nm in the coming sub-5 nm technology node. Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a significant portion of the interconnect cross-section and they are much more resistive than Cu, the effective conductance of an ultra-scaled interconnect will be compromised by the thick bilayer. Therefore, two dimensional (2D) layered materials have been explored as diffusion barrier alternatives. However, many of the proposed 2D barriers are prepared at too high temperatures to be compatible with the back-end-of-line (BEOL) technology. In addition, as important as the diffusion barrier properties, the liner properties of 2D materials must be evaluated, which has not yet been pursued. Here, a 2D layered tantalum sulfide (TaSx) with ~1.5 nm thickness is developed to replace the conventional TaN/Ta bilayer. The TaSx ultra-thin film is industry-friendly, BEOL-compatible, and can be directly prepared on dielectrics. Our results show superior barrier/liner properties of TaSx compared to the TaN/Ta bilayer. This single-stack material, serving as both a liner and a barrier, will enable continued scaling of interconnects beyond 5 nm node. △ Less

Submitted 23 January, 2019; originally announced January 2019.

Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects

Authors: Chun-Li Lo, Massimo Catalano, Kirby K. H. Smithe, Luhua Wang, Shengjiao Zhang, Eric Pop, Moon J. Kim, Zhihong Chen

Abstract: Copper interconnects in modern integrated circuits require ultra-thin barriers to prevent intermixing of Cu with surrounding dielectric materials. Conventional barriers rely on metals like TaN, however their finite thickness reduces the cross-sectional area and significantly increases the resistivity of nanoscale interconnects. In this study, a new class of two-dimensional (2D) Cu diffusion barrie… ▽ More Copper interconnects in modern integrated circuits require ultra-thin barriers to prevent intermixing of Cu with surrounding dielectric materials. Conventional barriers rely on metals like TaN, however their finite thickness reduces the cross-sectional area and significantly increases the resistivity of nanoscale interconnects. In this study, a new class of two-dimensional (2D) Cu diffusion barriers, hexagonal boron nitride (h-BN) and molybdenum disulfide (MoS2), is demonstrated for the first time. Using time-dependent dielectric breakdown measurements and scanning transmission electron microscopy coupled with energy dispersive X-ray spectroscopy and electron energy loss spectroscopy, these 2D materials are shown to be promising barrier solutions for ultra-scaled interconnect technology. The predicted lifetime of devices with directly deposited 2D barriers can achieve three orders of magnitude improvement compared to control devices without barriers. △ Less

Submitted 30 June, 2017; originally announced June 2017.

Comments: 18 pages; 8 figures

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

Authors: G. William Burg, Nitin Prasad, Babak Fallahazad, Amithraj Valsaraj, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Qingxiao Wang, Moon J. Kim, Leonard F. Register, Emanuel Tutuc

Abstract: We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling… ▽ More We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively. △ Less

Submitted 25 June, 2017; originally announced June 2017.

Comments: 23 pages, 5 figures

Journal ref: Nano Lett. 17, 3919 (2017)

MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates

Authors: Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, Wan Sik Hwang, Ning Lu, Xin Peng, Huai-Hsun Lien, John Weisenberger, Stephen McDonnell, Moon J. Kim, Margaret Dobrowolska, Jacek K Furdyna, Kyle Shen, Robert M. Wallace, Debdeep Jena, Huili Grace Xing

Abstract: MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibriu… ▽ More MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 Å and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: Six figure in main tex, 8 figures in SI and 4 tables in main text

Field-effect transistors made from solution-grown two-dimensional tellurene

Authors: Yixiu Wang, Gang Qiu, Ruoxing Wang, Shouyuan Huang, Qingxiao Wang, Yuanyue Liu, Yuchen Du, William A. Goddard III, Moon J. Kim, Xianfan Xu, Peide D. Ye, Wenzhuo Wu

Abstract: The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process. Our approach can creat… ▽ More The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a variety of drawbacks, including limitations in crystal size and stability. Here, we report the fabrication of large-area, high-quality 2D tellurium (tellurene) using a substrate-free solution process. Our approach can create crystals with a process-tunable thickness, from monolayer to tens of nanometres, and with lateral sizes of up to 100 um. The chiral-chain van der Waals structure of tellurene gives rise to strong in-plane anisotropic properties and large thickness dependent shifts in Raman vibrational modes, which is not observed in other 2D layered materials. We also fabricate tellurene field-effect transistors, which exhibit air-stable performance at room temperature for over two months, on off ratios on the order of 106 and field-effect mobilities of around 700 cm2 per Vs. Furthermore, by scaling down the channel length and integrating with high-k dielectrics, transistors with a significant on-state current density of 1 A mm-1 are demonstrated. △ Less

Submitted 24 April, 2018; v1 submitted 20 April, 2017; originally announced April 2017.

Journal ref: Nature Electronics, volume 1, page 228, 2018

Covalent Nitrogen Do** and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Authors: Angelica Azcatl, Xiaoye Qin, Abhijith Prakash, Chenxi Zhang, Lanxia Cheng, Qingxiao Wang, Ning Lu, Moon J. Kim, Jiyoung Kim, Kyeongjae Cho, Rafik Addou, Christopher L. Hinkle, Joerg Appenzeller, Robert M. Wallace

Abstract: Controllable do** of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for do** of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence o… ▽ More Controllable do** of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for do** of MoS2 with nitrogen through a remote N2 plasma surface treatment. By monitoring the surface chemistry of MoS2 upon N2 plasma exposure using in-situ X-ray photoelectron spectroscopy, we identified the presence of covalently bonded nitrogen in MoS2, where substitution of the chalcogen sulfur by nitrogen is determined as the do** mechanism. Furthermore, the electrical characterization demonstrates that p-type do** of MoS2 is achieved by nitrogen do**, in agreement with theoretical predictions. Notably, we found that the presence of nitrogen can induce compressive strain in the MoS2 structure, which represents the first evidence of strain induced by substitutional do** in a transition metal dichalcogenide material. Finally, our first principle calculations support the experimental demonstration of such strain, and a correlation between nitrogen do** concentration and compressive strain in MoS2 is elucidated. △ Less

Submitted 22 July, 2016; originally announced July 2016.

Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

Authors: Devashish P. Gopalan, Patrick C. Mende, Sergio C. de la Barrera, Shonali Dhingra, Jun Li, Kehao Zhang, Nicholas A. Simonson, Joshua A. Robinson, Ning Lu, Qingxiao Wang, Moon J. Kim, Brian D'Urso, Randall M. Feenstra

Abstract: Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphe… ▽ More Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally graphene is observed to change in a manner that is consistent with the formation of a mixed h-BN/graphene alloy, i.e. h-BNC alloy. Furthermore, following the deposition of the borazine, a small fraction of the surface is found to consist of bare copper, indicating etching of the overlying graphene. The inability to form h-BN layers on top of graphene is discussed in terms of the catalytic behavior of the underlying copper surface and the decomposition of the borazine on top of the graphene. △ Less

Submitted 10 February, 2016; v1 submitted 15 September, 2015; originally announced September 2015.

Comments: 19 pages, 12 figures; submitted to J. Mater. Res.; v2 adds Fig. 5 and makes some minor modifications to text

Journal ref: J. Mater. Res. 31, 945 (2016)

Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Authors: Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming-Yang Li, Xin Peng, Moon J. Kim, Lain-Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson

Abstract: Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphe… ▽ More Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics. △ Less

Submitted 18 March, 2015; originally announced March 2015.

Journal ref: Nature Communications (2015), 6, 7311

Accurate Measurements of the Intrinsic Surface Impedance of Thin YBCO Films Using a Modified Two-tone Resonator Method

Authors: J. H. Lee, W. I. Yang, M. J. Kim, James C. Booth, K. Leong, S. Schima, David Rudman, Sang Young Lee

Abstract: We propose a modified two-tone method that could be used for sensitive measurements of the intrinsic microwave surface impedance (Zs) of thin superconductor films and the tand of a low-loss dielectric. An open-gap resonator scheme is used to measure the penetration depth of thin superconductor films and extract the intrinsic Zs of the superconductor films from its measured effective surface resi… ▽ More We propose a modified two-tone method that could be used for sensitive measurements of the intrinsic microwave surface impedance (Zs) of thin superconductor films and the tand of a low-loss dielectric. An open-gap resonator scheme is used to measure the penetration depth of thin superconductor films and extract the intrinsic Zs of the superconductor films from its measured effective surface resistance and penetration depth. We use a very small gap of 10 um between the top plate and the rest parts of the resonator. The loss tangent of rutile in the low 10^-7 range and the dielectric constant as high as ~110 are observed at temperatures below 10 K at ~15.2 GHz, which enable to measure the Rs of the 10 mm-in-diameter YBCO films as low as \~100 micro-ohm at the same frequency (f). The discrepancy between the effective surface resistance at ~15.2 GHz and that at ~8.5 GHz scaled to ~15.2 GHz appears less than 6 % when the relations of Rs ~ f^2 and loss tangent ~ f are used. We describe usefulness of our measurement method for measuring the intrinsic microwave properties of various superconductor samples. △ Less

Submitted 15 February, 2005; originally announced February 2005.

Comments: 6 pages, 7 figures. To be published in IEEE Transaction on applied superconductivity June (2005)

Effective Vortex Mass from Microscopic Theory

Authors: Jung Hoon Han, June Seo Kim, Min Jae Kim, ** Ao

Abstract: We calculate the effective mass of a single quantized vortex in the BCS superconductor at finite temperature. Based on effective action approach, we arrive at the effective mass of a vortex as integral of the spectral function $J(ω)$ divided by $ω^3$ over frequency. The spectral function is given in terms of the quantum-mechanical transition elements of the gradient of the Hamiltonian between tw… ▽ More We calculate the effective mass of a single quantized vortex in the BCS superconductor at finite temperature. Based on effective action approach, we arrive at the effective mass of a vortex as integral of the spectral function $J(ω)$ divided by $ω^3$ over frequency. The spectral function is given in terms of the quantum-mechanical transition elements of the gradient of the Hamiltonian between two Bogoliubov-deGennes (BdG) eigenstates. Based on self-consistent numerical diagonalization of the BdG equation we find that the effective mass per unit length of vortex at zero temperature is of order $m (k_f ξ_0)^2$ ($k_f$=Fermi momentum, $ξ_0$=coherence length), essentially equaling the electron mass displaced within the coherence length from the vortex core. Transitions between the core states are responsible for most of the mass. The mass reaches a maximum value at $T\approx 0.5 T_c$ and decreases continuously to zero at $T_c$. △ Less

Submitted 13 July, 2004; v1 submitted 7 July, 2004; originally announced July 2004.

Comments: Supercedes prior version, cond-mat/9903125