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Showing 1–8 of 8 results for author: Kim, J K

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  1. arXiv:2308.01513  [pdf

    cond-mat.mtrl-sci

    Type-II Red Phosphorus: Wavy Packing of Twisted Pentagonal Tubes

    Authors: Jun-Yeong Yoon, Yang** Lee, Dong-Gyu Kim, Dong Gun Oh, ** Kyun Kim, Linshuo Guo, Jungcheol Kim, Jeongheon Choe, Kihyun Lee, Hyeonsik Cheong, Chae Un Kim, Young Jai Choi, Yanhang Ma, Kwanpyo Kim

    Abstract: Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining… ▽ More

    Submitted 2 August, 2023; originally announced August 2023.

    Comments: 16 pages, 5 figures, 1 table

    Journal ref: Angew. Chem. Int. Ed. e202307102 (2023)

  2. arXiv:2210.14701  [pdf

    physics.chem-ph cond-mat.other

    Machine Learning Assisted Design and Optimization of Transition Metal-Incorporated Carbon Quantum Dot Catalysts for Hydrogen Evolution Reaction

    Authors: Duong Nguyen Nguyen, Min-Cheol Kim, Unbeom Baeck, Jaehyoung Lim, Namsoo Shin, Jaekook Kim, Heechae Choi, Ho Seok Park, Uk Sim, Jung Kyu Kim

    Abstract: Development of cost-effective hydrogen evolution reaction (HER) catalysts with outstanding catalytic activity, replacing cost-prohibitive noble metal-based catalysts, is critical for practical green hydrogen production. A popular strategy for promoting the catalytic performance of noble metal-free catalysts is to incorporate earth-abundant transition metal (TM) atoms into nanocarbon platforms such… ▽ More

    Submitted 26 October, 2022; originally announced October 2022.

  3. arXiv:2012.10625   

    cond-mat.mtrl-sci

    Parallelising Electrocatalytic Nitrogen Fixation Beyond Heterointerfacial Boundary

    Authors: Tae-Yong An, Minyeong Je, Seung Hun Roh, Subramani Surendran, Mi-Kyung Han, Jaehyoung Lim, Dong-Kyu Lee, Gnanaprakasam Janani, Heechae Choi, Jung Kyu Kim, Uk Sim

    Abstract: The nitrogen (N2) reduction reaction (NRR) is an eco-friendly alternative to the Haber-Bosch process to produce ammonia (NH3) with high sustainability. However, the significant magnitude of uphill energies in the multi-step NRR pathways is a bottleneck of its serial reactions. Herein, the concept of a parallelized reaction is proposed to actively promote NH3 production via the NRR using a multi-ph… ▽ More

    Submitted 29 September, 2021; v1 submitted 19 December, 2020; originally announced December 2020.

    Comments: Project is on hold

  4. arXiv:2007.10641  [pdf, other

    cond-mat.str-el

    Orbital anisotropy of heavy fermion Ce$_{2}$IrIn$_{8}$ under crystalline electric field and its energy scale

    Authors: Bo Gyu Jang, Beomjoon Goh, Junwon Kim Jae Nyeong Kim, Hanhim Kang, Kristjan Haule, Gabriel Kotliar, Hongchul Choi, Ji Hoon Shim

    Abstract: We investigate the temperature ($T$)-evolution of orbital anisotropy and its effect on spectral function and optical conductivity in Ce$_{2}$IrIn$_{8}$, using a first principles dynamical mean field theory combined with density functional theory. The orbital anisotropy develops by lowering $T$ and it is intensified below a temperature corresponding to the crystalline-electric field (CEF) splitting… ▽ More

    Submitted 17 January, 2022; v1 submitted 21 July, 2020; originally announced July 2020.

    Comments: 6 pages, 4 figures

  5. Spin-wave gap collapse in Rh-doped Sr2IrO4

    Authors: J. Bertinshaw, J. K. Kim, J. Porras, K. Ueda, N. H. Sung, A. Efimenko, A. Bombardi, Jungho Kim, B. Keimer, B. J. Kim

    Abstract: We use resonant inelastic x-ray scattering (RIXS) at the Ir L3 edge to study the effect of hole do** upon the Jeff=1/2 Mott-insulating state in Sr2IrO4, via Rh replacement of the Ir site. The spin-wave gap, associated with XY-type spin-exchange anisotropy, collapses with increasing Rh content, prior to the suppression of the Mott-insulating state and in contrast to electron do** via La substit… ▽ More

    Submitted 23 March, 2020; originally announced March 2020.

    Comments: 5 pages, 3 figures

    Journal ref: Physical Review B, 101, 094428 (2020)

  6. arXiv:1904.03284  [pdf

    cond-mat.mtrl-sci

    Facile and time-resolved chemical growth of nanoporous CaxCoO2 thin films for flexible and thermoelectric applications

    Authors: Tridib Kumar Sinha, **ho Lee, ** Kuk Kim, Samit K. Ray, Biplab Paul

    Abstract: CaxCoO2 thin films can be promising for widespread flexible thermoelectric applications in a wide temperature range from room-temperature self-powered wearable applications (by harvesting power from body heat) to energy harvesting from hot surfaces (e.g., hot pipes) if a cost-effective and facile growth technique is developed. Here, we demonstrate a time resolved, facile and ligand-free soft chemi… ▽ More

    Submitted 5 April, 2019; originally announced April 2019.

    Comments: 16 pages, 5 figures

    Journal ref: Chemical Communication 2019

  7. Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx

    Authors: Henan Liu, Yong Zhang, Elizabeth H. Steenbergen, Shi Liu, Zhiyuan Lin, Yong-Hang Zhang, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchprohm, Russell D. Dupuis, ** K. Kim, Samuel D. Hawkins, John F. Klem

    Abstract: In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.

    Submitted 16 April, 2017; originally announced April 2017.

    Journal ref: Phys. Rev. Applied 8, 034028 (2017)

  8. arXiv:1204.0561  [pdf

    cond-mat.mes-hall

    Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors

    Authors: W. Pan, J. F. Klem, J. K. Kim, M. Thalakulam, M. J. Cich

    Abstract: We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the… ▽ More

    Submitted 2 April, 2012; originally announced April 2012.