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Type-II Red Phosphorus: Wavy Packing of Twisted Pentagonal Tubes
Authors:
Jun-Yeong Yoon,
Yang** Lee,
Dong-Gyu Kim,
Dong Gun Oh,
** Kyun Kim,
Linshuo Guo,
Jungcheol Kim,
Jeongheon Choe,
Kihyun Lee,
Hyeonsik Cheong,
Chae Un Kim,
Young Jai Choi,
Yanhang Ma,
Kwanpyo Kim
Abstract:
Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining…
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Elemental phosphorus exhibits fascinating structural varieties and versatile properties. The unique nature of phosphorus bonds can lead to the formation of extremely complex structures, and detailed structural information on some phosphorus polymorphs is yet to be investigated. In this study, we investigated an unidentified crystalline phase of phosphorus, type-II red phosphorus (RP), by combining state-of-the-art structural characterization techniques. Electron diffraction tomography, atomic-resolution scanning transmission electron microscopy (STEM), powder X-ray diffraction, and Raman spectroscopy were concurrently used to elucidate the hidden structural motifs and their packing in type-II RP. Electron diffraction tomography, performed using individual crystalline nanowires, was used to identify a triclinic unit cell with volume of 5330 Å^3, the largest unit cell for elemental phosphorus crystals up to now, which contains approximately 250 phosphorus atoms. Atomic-resolution STEM imaging, which was performed along different crystal-zone axes, confirmed that the twisted wavy tubular motif is the basic building block of type-II RP. Our study discovered and presented a new variation of building blocks in phosphorus, and it provides insights to clarify the complexities observed in phosphorus as well as other relevant systems.
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Submitted 2 August, 2023;
originally announced August 2023.
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Machine Learning Assisted Design and Optimization of Transition Metal-Incorporated Carbon Quantum Dot Catalysts for Hydrogen Evolution Reaction
Authors:
Duong Nguyen Nguyen,
Min-Cheol Kim,
Unbeom Baeck,
Jaehyoung Lim,
Namsoo Shin,
Jaekook Kim,
Heechae Choi,
Ho Seok Park,
Uk Sim,
Jung Kyu Kim
Abstract:
Development of cost-effective hydrogen evolution reaction (HER) catalysts with outstanding catalytic activity, replacing cost-prohibitive noble metal-based catalysts, is critical for practical green hydrogen production. A popular strategy for promoting the catalytic performance of noble metal-free catalysts is to incorporate earth-abundant transition metal (TM) atoms into nanocarbon platforms such…
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Development of cost-effective hydrogen evolution reaction (HER) catalysts with outstanding catalytic activity, replacing cost-prohibitive noble metal-based catalysts, is critical for practical green hydrogen production. A popular strategy for promoting the catalytic performance of noble metal-free catalysts is to incorporate earth-abundant transition metal (TM) atoms into nanocarbon platforms such as carbon quantum dots (CQDs). Although data-driven catalyst design methods can significantly accelerate the rational design of TM element-doped CQD (M@CQD) catalysts, they suffer from either a simplified theoretical model or the prohibitive cost and complexity of experimental data generation. In this study, we propose an effective and facile HER catalyst design strategy based on machine learning (ML) and ML model verification using electrochemical methods accompanied with density functional theory (DFT) simulations. Based on a Bayesian genetic algorithm (BGA) ML model, the Ni@CQD catalyst on a three-dimensional reduced graphene oxide (3D rGO) conductor is proposed as the best HER catalyst under the optimal conditions of catalyst loading, electrode type, and temperature and pH of electrolyte. We validate the ML results with electrochemical experiments, where the Ni@CQD catalyst exhibited superior HER activity, requiring an overpotential of 189 mV to achieve 10 mA cm-2 with a Tafel slope of 52 mV dec-1 and impressive durability in acidic media. We expect that this methodology and the excellent performance of the Ni@CQD catalyst provide an effective route for the rational design of highly active electrocatalysts for commercial applications.
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Submitted 26 October, 2022;
originally announced October 2022.
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Parallelising Electrocatalytic Nitrogen Fixation Beyond Heterointerfacial Boundary
Authors:
Tae-Yong An,
Minyeong Je,
Seung Hun Roh,
Subramani Surendran,
Mi-Kyung Han,
Jaehyoung Lim,
Dong-Kyu Lee,
Gnanaprakasam Janani,
Heechae Choi,
Jung Kyu Kim,
Uk Sim
Abstract:
The nitrogen (N2) reduction reaction (NRR) is an eco-friendly alternative to the Haber-Bosch process to produce ammonia (NH3) with high sustainability. However, the significant magnitude of uphill energies in the multi-step NRR pathways is a bottleneck of its serial reactions. Herein, the concept of a parallelized reaction is proposed to actively promote NH3 production via the NRR using a multi-ph…
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The nitrogen (N2) reduction reaction (NRR) is an eco-friendly alternative to the Haber-Bosch process to produce ammonia (NH3) with high sustainability. However, the significant magnitude of uphill energies in the multi-step NRR pathways is a bottleneck of its serial reactions. Herein, the concept of a parallelized reaction is proposed to actively promote NH3 production via the NRR using a multi-phase vanadium oxide-nitride (V2O3/VN) hybrid system. Density functional theory calculations revealed that the V2O3/VN junction parallelizes NRR pathways by exchanging intermediate N2H4* and NH2* products to avoid massive uphill energies towards final NH3 generation. Such an exchange is driven by the difference in coverage of the two species. The impact of the reaction parallelization strategy for multi-step nitrogen reduction is demonstrated with the V2O3/VN junction by an increased ammonia yield rate of 18.36 micro mol h^-1 cm^-2 and a Faraday efficiency (FE) of 26.62% at -0.3 V versus a reversible hydrogen electrode in a 0.1 M aqueous KOH electrolyte, of which FE value exhibits 16.95 times and 6.22 times higher than that of single-phase V2O3 and VN, respectively. The introduction of multi-phase oxides/nitrides into a transition metal-based electrocatalyst can thus be a promising approach to realizing an alternative method for N2 fixation.
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Submitted 29 September, 2021; v1 submitted 19 December, 2020;
originally announced December 2020.
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Orbital anisotropy of heavy fermion Ce$_{2}$IrIn$_{8}$ under crystalline electric field and its energy scale
Authors:
Bo Gyu Jang,
Beomjoon Goh,
Junwon Kim Jae Nyeong Kim,
Hanhim Kang,
Kristjan Haule,
Gabriel Kotliar,
Hongchul Choi,
Ji Hoon Shim
Abstract:
We investigate the temperature ($T$)-evolution of orbital anisotropy and its effect on spectral function and optical conductivity in Ce$_{2}$IrIn$_{8}$, using a first principles dynamical mean field theory combined with density functional theory. The orbital anisotropy develops by lowering $T$ and it is intensified below a temperature corresponding to the crystalline-electric field (CEF) splitting…
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We investigate the temperature ($T$)-evolution of orbital anisotropy and its effect on spectral function and optical conductivity in Ce$_{2}$IrIn$_{8}$, using a first principles dynamical mean field theory combined with density functional theory. The orbital anisotropy develops by lowering $T$ and it is intensified below a temperature corresponding to the crystalline-electric field (CEF) splitting size. Interestingly, the depopulation of CEF excited states leaves a spectroscopic signature, "shoulder", in the $T$-dependent spectral function at the Fermi level. From the two-orbital Anderson impurity model, we demonstrate that CEF splitting size is the key ingredient influencing the emergence and the position of the "shoulder". Besides the two conventional temperature scales $T_{K}$ and $T^{*}$, we introduce an additional temperature scale to deal with the orbital anisotropy in heavy fermion systems.
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Submitted 17 January, 2022; v1 submitted 21 July, 2020;
originally announced July 2020.
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Spin-wave gap collapse in Rh-doped Sr2IrO4
Authors:
J. Bertinshaw,
J. K. Kim,
J. Porras,
K. Ueda,
N. H. Sung,
A. Efimenko,
A. Bombardi,
Jungho Kim,
B. Keimer,
B. J. Kim
Abstract:
We use resonant inelastic x-ray scattering (RIXS) at the Ir L3 edge to study the effect of hole do** upon the Jeff=1/2 Mott-insulating state in Sr2IrO4, via Rh replacement of the Ir site. The spin-wave gap, associated with XY-type spin-exchange anisotropy, collapses with increasing Rh content, prior to the suppression of the Mott-insulating state and in contrast to electron do** via La substit…
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We use resonant inelastic x-ray scattering (RIXS) at the Ir L3 edge to study the effect of hole do** upon the Jeff=1/2 Mott-insulating state in Sr2IrO4, via Rh replacement of the Ir site. The spin-wave gap, associated with XY-type spin-exchange anisotropy, collapses with increasing Rh content, prior to the suppression of the Mott-insulating state and in contrast to electron do** via La substitution of the Sr site. At the same time, despite heavy dam**, the d-d excitation spectra retain their overall amplitude and dispersion character. A careful study of the spin-wave spectrum reveals that deviations from the J1-J2-J3 Heisenberg used to model the pristine system disappear at intermediate do** levels. These findings are interpreted in terms of a modulation of Ir-Ir correlations due to the influence of Rh impurities upon nearby Ir wave functions, even as the single-band Jeff=1/2 model remains valid up to full carrier delocalization. They underline the importance of the transition metal site symmetry when do** pseudospin systems such as Sr2IrO4.
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Submitted 23 March, 2020;
originally announced March 2020.
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Facile and time-resolved chemical growth of nanoporous CaxCoO2 thin films for flexible and thermoelectric applications
Authors:
Tridib Kumar Sinha,
**ho Lee,
** Kuk Kim,
Samit K. Ray,
Biplab Paul
Abstract:
CaxCoO2 thin films can be promising for widespread flexible thermoelectric applications in a wide temperature range from room-temperature self-powered wearable applications (by harvesting power from body heat) to energy harvesting from hot surfaces (e.g., hot pipes) if a cost-effective and facile growth technique is developed. Here, we demonstrate a time resolved, facile and ligand-free soft chemi…
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CaxCoO2 thin films can be promising for widespread flexible thermoelectric applications in a wide temperature range from room-temperature self-powered wearable applications (by harvesting power from body heat) to energy harvesting from hot surfaces (e.g., hot pipes) if a cost-effective and facile growth technique is developed. Here, we demonstrate a time resolved, facile and ligand-free soft chemical method for the growth of nanoporous Ca0.35CoO2 thin films on sapphire and mica substrates from a water-based precursor ink, composed of in-situ prepared Ca2+-DMF and Co2+-DMF complexes. Mica serves as flexible substrate as well as sacrificial layer for film transfer. The grown films are oriented and can sustain bending stress until a bending radius of 15 mm. Despite the presence of nanopores, the power factor of Ca0.35CoO2 film is found to be as high as 0.50 x 10-4 Wm-1K-2 near room temperature. The present technique, being simple and fast to be potentially suitable for cost-effective industrial upscaling.
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Submitted 5 April, 2019;
originally announced April 2019.
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Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx
Authors:
Henan Liu,
Yong Zhang,
Elizabeth H. Steenbergen,
Shi Liu,
Zhiyuan Lin,
Yong-Hang Zhang,
Jeomoh Kim,
Mi-Hee Ji,
Theeradetch Detchprohm,
Russell D. Dupuis,
** K. Kim,
Samuel D. Hawkins,
John F. Klem
Abstract:
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
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Submitted 16 April, 2017;
originally announced April 2017.
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Chaotic Quantum Transport near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors
Authors:
W. Pan,
J. F. Klem,
J. K. Kim,
M. Thalakulam,
M. J. Cich
Abstract:
We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the…
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We present here our recent quantum transport results around the charge neutrality point (CNP) in a type-II InAs/GaSb field-effect transistor. At zero magnetic field, a conductance minimum close to 4e^2/h develops at the CNP and it follows semi-logarithmic temperature dependence. In quantized magnetic (B) fields and at low temperatures, well developed integer quantum Hall states are observed in the electron as well as hole regimes. Quantum transport shows noisy-like behavior around the CNP at extremely high B fields. Surprisingly, when the diagonal conductivity σ_{xx} is plotted against the Hall conductivity σ_{xy}, a circular conductivity law is discovered, suggesting a chaotic quantum transport behavior.
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Submitted 2 April, 2012;
originally announced April 2012.