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Crucial role of out-of-plane Sb-$p$ orbitals in Van Hove singularity formation and electronic correlation for superconducting Kagome metal CsV$_3$Sb$_5$
Authors:
Min Yong Jeong,
Hyeok-Jun Yang,
Hee Seung Kim,
Yong Baek Kim,
SungBin Lee,
Myung Joon Han
Abstract:
First-principles density functional theory calculations are performed to understand the electronic structure and interaction parameters for recently discovered superconducting Kagome metal CsV$_3$Sb$_5$. A systematic analysis of the tight-binding parameters based on maximally localized Wannier function method demonstrates that the out-of-plane Sb$^{\rm out}$-$p$ orbital is a key element in complet…
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First-principles density functional theory calculations are performed to understand the electronic structure and interaction parameters for recently discovered superconducting Kagome metal CsV$_3$Sb$_5$. A systematic analysis of the tight-binding parameters based on maximally localized Wannier function method demonstrates that the out-of-plane Sb$^{\rm out}$-$p$ orbital is a key element in complete description of the three Van Hove singularity structures known in this material at $M$ point near the Fermi level. Further, the correlation strengths are also largely determined by Sb$^{\rm out}$-$p$ states. Based on constrained random phase approximation, we find that on-site and inter-site interaction parameter are both significantly affected by the screening effect of Sb$^{\rm out}$-$p$ orbitals. As the role of this previously unnoticed orbital state can be tuned or controlled by out-of-plane lattice parameters, we examine the electronic structure and particularly the evolution of Van Hove singularity points as a function of strain and pressure, which can serve as useful knobs to control the material properties.
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Submitted 17 March, 2022;
originally announced March 2022.
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Intertwining orbital current order and superconductivity in Kagome metal
Authors:
Hyeok-Jun Yang,
Hee Seung Kim,
Min Yong Jeong,
Yong Baek Kim,
Myung Joon Han,
SungBin Lee
Abstract:
The nature of superconductivity in newly discovered Kagome materials, $\text{AV}_3\text{Sb}_5$ (A=K, Rb, Cs), has been a subject of intense debate. Recent experiments suggest the presence of orbital current order on top of the charge density wave (CDW) and superconductivity. Since the orbital current order breaks time-reversal symmetry, it may fundamentally affect possible superconducting states.…
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The nature of superconductivity in newly discovered Kagome materials, $\text{AV}_3\text{Sb}_5$ (A=K, Rb, Cs), has been a subject of intense debate. Recent experiments suggest the presence of orbital current order on top of the charge density wave (CDW) and superconductivity. Since the orbital current order breaks time-reversal symmetry, it may fundamentally affect possible superconducting states. In this work, we investigate the mutual influence between the orbital current order and superconductivity in Kagome metal with characteristic van Hove singularity (vHS). By explicitly deriving the Landau-Ginzburg theory, we classify possible orbital current order and superconductivity. It turns out that distinct unconventional superconductivities are expected, depending on the orbital current ordering types. Thus, this information can be used to infer the superconducting order parameter when the orbital current order is identified and vice versa. We also discuss possible experiments that may distinguish such superconducting states coexisting with the orbital current order.
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Submitted 14 September, 2022; v1 submitted 14 March, 2022;
originally announced March 2022.
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Partial Kondo Screening and Anomalous Thermal Conductance
Authors:
Hee Seung Kim,
Hyeok-Jun Yang,
SungBin Lee
Abstract:
The frustrated magnetism on the Kondo lattice system motivates intriguing Kondo-breakdown beyond the traditional Doniach scenario. Among them, the fractionalized Fermi liquid (FL*) has drawn a particular interest by virtue of its fractionalized nature. Here, we study the phase diagram of $J_{1}$-$J_{2}$ Kondo-Heisenberg model on a honeycomb lattice at a quarter filling. Employing the slave-fermion…
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The frustrated magnetism on the Kondo lattice system motivates intriguing Kondo-breakdown beyond the traditional Doniach scenario. Among them, the fractionalized Fermi liquid (FL*) has drawn a particular interest by virtue of its fractionalized nature. Here, we study the phase diagram of $J_{1}$-$J_{2}$ Kondo-Heisenberg model on a honeycomb lattice at a quarter filling. Employing the slave-fermion mean-field theory with $d \pm id$ spin liquid ansatz and exact diagonalization, we discuss the emergence of partial Kondo screening in the frustrated regime with comparable $J_{1}$ and $J_{2}$, and the fractionalized superconductor (SC*) which is superconductor analogy of the FL*. Due to the larger number of local spin moments than itinerant electrons, the magnetic fluctuation is still significant even in the strong-coupling limit, which influences the thermodynamic and transport properties qualitatively. In particular, we estimate the thermal conductance to probe the low-energy excitation and show the anomalous behaviour in the SC* phase contrast to the conventional superconductors.
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Submitted 2 August, 2021;
originally announced August 2021.
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The high temperature mechanical properties and the correlated microstructure/texture evolutions of a TWIP high entropy alloy
Authors:
A. Nabizada,
A. Zarei-Hanzaki,
H. R. Abedi,
M. H. Barati,
P. Asghari-Rad,
H. S. Kim
Abstract:
The present work deals with the microstructure and texture evolutions of a TWIP high entropy alloy at various temperatures. Toward this end, the tensile tests were conducted at temperatures ranging from 298 to 873 K under the strain rate of 0.001s-1. The experimented material exhibited an extraordinary room temperature work hardening behavior, in respect of both the instantaneous strain hardening…
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The present work deals with the microstructure and texture evolutions of a TWIP high entropy alloy at various temperatures. Toward this end, the tensile tests were conducted at temperatures ranging from 298 to 873 K under the strain rate of 0.001s-1. The experimented material exhibited an extraordinary room temperature work hardening behavior, in respect of both the instantaneous strain hardening exponent and the work hardening rate values. This resulted in an acceptable ultimate tensile strength /ductility balance and was justified considering the high activity of twinning and planar slip. Such work hardening capacity deteriorated at higher temperatures due to increasing the dislocation annihilation rate and the stacking fault energy values that suppressed twin formation and dislocation accumulation. However, the decrease in amplitude and extent of the work hardening region was insignificant compared with other single-phase high entropy alloys. This was attributed to the high capacity of the alloy for dislocation storage at various deformation temperatures. The serrated flow was observed at 773 and 873 K due to the dynamic strain aging (DSA) mechanism. Interestingly, in this case, the DSA mechanism has a beneficial effect on overall ductility, which was attributed to the increase in the strain hardening exponent result in a delay of necking. Texture examination also reveals the formation of a double fiber texture due to the simultaneous contribution of twinning and octahedral slip.
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Submitted 10 May, 2021;
originally announced May 2021.
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Gas Sensing Properties of single-material SnP3 logical junction via Negative Differential Resistance: Theoretical Study
Authors:
Muhammad S. Ramzan,
Han Seul Kim,
Agnieszka B. Kuc
Abstract:
The field of 2D materials has gained a lot of attention for vast range of applications. Amongst others, the sensing ability towards harmful gases is the application, which we explored in the present work using quantum-mechanical simulations for the SnP3 material. Its electronic properties, namely 1 and 2 layers being semiconducting, while multilayers being metallic, offer a possibility to build a…
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The field of 2D materials has gained a lot of attention for vast range of applications. Amongst others, the sensing ability towards harmful gases is the application, which we explored in the present work using quantum-mechanical simulations for the SnP3 material. Its electronic properties, namely 1 and 2 layers being semiconducting, while multilayers being metallic, offer a possibility to build a single-material logical junction. In addition, the harmful gases studied here show physical adsorption with charge transfer from the substrate to the gas molecules. Calculated recovery times show promise of a good sensing material. The I-V characteristics calculated for all cases indicates that SnP3 could be a viable sensing material towards NO gas via negative differential resistance.
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Submitted 15 April, 2021;
originally announced April 2021.
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Non-adiabatic single-electron pump in a dopant-free GaAs/AlGaAs 2DEG
Authors:
B. Buonacorsi,
F. Sfigakis,
A. Shetty,
M. C. Tam,
H. S. Kim,
S. R. Harrigan,
F. Hohls,
M. E. Reimer,
Z. R. Wasilewski,
J. Baugh
Abstract:
We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance consideri…
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We have realized quantized charge pum** using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with such pumps to form electrically-driven single photon sources. Our pumps operate at up to 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate pum** in zero magnetic field and temperatures up to 5K, driven by a simple RF sine waveform. Fitting to a universal decay cascade model yields values for the figure of merit $δ$ that compare favorably to reported modulation-doped GaAs pumps operating under similar conditions. The devices reported here are already suitable for optoelectronics applications, and with further improvement could offer a route to a current standard that does not require sub-Kelvin temperatures and high magnetic fields.
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Submitted 16 September, 2021; v1 submitted 26 February, 2021;
originally announced February 2021.
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Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
Authors:
A. Shetty,
F. Sfigakis,
W. Y. Mak,
K. Das Gupta,
B. Buonacorsi,
M. C. Tam,
H. S. Kim,
I. Farrer,
A. F. Croxall,
H. E. Beere,
A. R. Hamilton,
M. Pepper,
D. G. Austing,
S. A. Studenikin,
A. Sachrajda,
M. E. Reimer,
Z. R. Wasilewski,
D. A. Ritchie,
J. Baugh
Abstract:
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background i…
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Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility at a given electron density, primarily driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility loss, driven by an increase in surface charge density. Biased illuminations performed with positive applied gate voltages result in a mobility gain, whereas those performed with negative applied voltages result in a mobility loss. The magnitude of the mobility gain (loss) weakens with 2DEG depth, and is likely driven by a reduction (increase) in surface charge density. Remarkably, this mobility gain/loss is fully reversible by performing another biased illumination with the appropriate gate voltage, provided both n-type and p-type ohmic contacts are present. Experimental results are modeled with Boltzmann transport theory, and possible mechanisms are discussed.
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Submitted 21 December, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
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Multi-space excitation as an alternative to the Landauer picture for non-equilibrium quantum transport
Authors:
Juho Lee,
Han Seul Kim,
Yong-Hoon Kim
Abstract:
While the Landauer viewpoint constitutes a modern basis to understand nanoscale electronic transport and to realize first-principles implementations of the non-equilibrium Green's function (NEGF) formalism, seeking an alternative picture could be beneficial for the fundamental understanding and practical calculations of quantum transport processes. Herein, introducing a micro-canonical picture tha…
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While the Landauer viewpoint constitutes a modern basis to understand nanoscale electronic transport and to realize first-principles implementations of the non-equilibrium Green's function (NEGF) formalism, seeking an alternative picture could be beneficial for the fundamental understanding and practical calculations of quantum transport processes. Herein, introducing a micro-canonical picture that maps the finite-bias quantum transport process to a drain-to-source or multi-electrode optical excitation, the multi-space constrained-search density functional theory (MS-DFT) formalism for first-principles electronic structure and quantum transport calculations is developed. Performing MS-DFT calculations for the benzenedithiolate single-molecule junction, it is shown that MS-DFT and standard DFT-NEGF calculations produce practically equivalent electronic and transmission data. Importantly, the variational convergence of "non-equilibrium total energy" within MS-DFT is demonstrated, which should have significant implications for in operando studies of nanoscale devices. Establishing a viable alternative to the Landauer viewpoint, the developed formalism should provide valuable atomistic information in the development of next-generation nanodevices.
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Submitted 6 June, 2020;
originally announced June 2020.
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First-principles-derived effective mass approximation for the improved description of quantum nanostructures
Authors:
Hyeonwoo Yeo,
Jun Seong Lee,
Muhammad Ejaz Khan,
Hyo Seok Kim,
Duk Young Jeon,
Yong-Hoon Kim
Abstract:
The effective mass approximation (EMA) could be an efficient method for the computational study of semiconductor nanostructures with sizes too large to be handled by first-principles calculations, but the scheme to accurately and reliably introduce EMA parameters for given nanostructures remains to be devised. Herein, we report on an EMA approach based on first-principles-derived data, which enabl…
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The effective mass approximation (EMA) could be an efficient method for the computational study of semiconductor nanostructures with sizes too large to be handled by first-principles calculations, but the scheme to accurately and reliably introduce EMA parameters for given nanostructures remains to be devised. Herein, we report on an EMA approach based on first-principles-derived data, which enables accurate predictions of the optoelectronic properties of quantum nanostructures. For the CdS/ZnS core/shell quantum rods, for which we recently reported its experimental synthesis, we first carry out density functional theory (DFT) calculations for an infinite nanowire to obtain the nanoscopic dielectric constant, effective mass, and Kohn-Sham potential. The DFT-derived data are then transferred to the finite nanorod cases to set up the EMA equations, from which we estimate the photoluminescence (PL) characteristics. Compared with the corresponding method based on bulk EMA parameters and abrupt potential, we confirm that our EMA approach more accurately describes the PL properties of nanorods. We find that, in agreement with the experimentally observed trends, the optical gap of nanorods is roughly determined by the nanorod diameter and the PL intensity is reduced with increasing the nanorod length. The developed methodology is additionally applied to CdSe nanoplatelets, where reliable experimental data became recently available. Here, we again obtain excellent agreements between calculated and measured optical gap values, confirming the generality of our approach. It is finally shown that the abrupt confinement potential approximation most adversely affects the accuracy of EMA simulations.
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Submitted 13 June, 2020; v1 submitted 1 March, 2020;
originally announced March 2020.
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Artificial Relativistic Molecules
Authors:
Jae Whan Park,
Hyo Sung Kim,
Thomas Brumme,
Thomas Heine,
Han Woong Yeom
Abstract:
We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The sp…
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We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin-orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom-substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties.
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Submitted 3 February, 2020;
originally announced February 2020.
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Emergent chiral spin ordering and anomalous Hall effect of kagome lattice at 1/3 filling
Authors:
Hee Seung Kim,
Archana Mishra,
SungBin Lee
Abstract:
The study of electronic and magnetic properties of kagome lattice has been an active research area searching for topological phases of matters. In particular, the kagome system with transition metal stannides and etc exhibit interesting anomalous Hall effects driven by ferromagnetic or non-collinear magnetic ordering. In this paper, motivated by these pioneer works, we study strongly correlated sp…
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The study of electronic and magnetic properties of kagome lattice has been an active research area searching for topological phases of matters. In particular, the kagome system with transition metal stannides and etc exhibit interesting anomalous Hall effects driven by ferromagnetic or non-collinear magnetic ordering. In this paper, motivated by these pioneer works, we study strongly correlated spin-orbit coupled electrons in kagome lattice at 1/3 filling. Using both Hartree-Fock approach and effective model analysis, we report quantum phase transitions accompanied with distinct charge and magnetic ordered phases. Especially, for strongly interacting limit, we discover new types of 1(2)-pinned metallic states which are understood by effective localized electron models. Furthermore, when spin-orbit coupling is present, it turns out that such pinned metallic states open a wide region of Chern insulating phase with chiral spin ordering. Thus, quantum anomalous Hall effect is expected with emergent scalar spin chirality. Our theory provides a theoretical platform of strongly interacting kagome metal which is applicable to transition metal stannides.
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Submitted 29 December, 2019;
originally announced December 2019.
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Magnetic field and thermal Hall effect in a pyrochlore U(1) quantum spin liquid
Authors:
Hyeok-Jun Yang,
Hee Seung Kim,
SungBin Lee
Abstract:
The antiferromagnetic system on a rare-earth pyrochlore has been focused as a strong candidate of U(1) quantum spin liquid. Here, we study the phase transitions driven by external magnetic field and discuss the large thermal Hall effect due to emergent spinon excitations with staggered gauge fields. Despite the spinons, the charge excitations of the effective action that carry spin-1/2 quantum num…
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The antiferromagnetic system on a rare-earth pyrochlore has been focused as a strong candidate of U(1) quantum spin liquid. Here, we study the phase transitions driven by external magnetic field and discuss the large thermal Hall effect due to emergent spinon excitations with staggered gauge fields. Despite the spinons, the charge excitations of the effective action that carry spin-1/2 quantum number, do not couple to the external field, the emergent U(1) gauge field is influenced in the presence of external magnetic field. Especially along [111] and [110]-directions, we discuss the possible phase transitions between U(1) spin liquids with different gauge fluxes are stabilized in fields. Beyond the cases where gauge flux per plaquette are fixed to be either 0 or $π$, there exists a regime where the staggered gauge fluxes are stabilized without time reversal symmetry. In such a phase, the large thermal Hall conductivity $κ_{xy}/T\sim 4.6\times 10^{-3}\text{W}/(\text{K}^2\cdot\text{m})$ is expected to be observed below 1K.
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Submitted 4 November, 2019;
originally announced November 2019.
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Emergent Localization in Dodecagonal Bilayer Quasicrystals
Authors:
Moon Jip Park,
Hee Seung Kim,
SungBin Lee
Abstract:
A new type of long-range ordering in the absence of translational symmetry gives rise to drastic revolution of our common knowledge in condensed matter physics. Quasicrystal, as such unconventional system, became a plethora to test our insights and to find exotic states of matter. In particular, electronic properties in quasicrystal have gotten lots of attention along with their experimental reali…
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A new type of long-range ordering in the absence of translational symmetry gives rise to drastic revolution of our common knowledge in condensed matter physics. Quasicrystal, as such unconventional system, became a plethora to test our insights and to find exotic states of matter. In particular, electronic properties in quasicrystal have gotten lots of attention along with their experimental realization and controllability in twisted bilayer systems. In this work, we study how quasicrystalline order in bilayer systems can induce unique localization of electrons without any extrinsic disorders. We focus on dodecagonal quasicrystal that has been demonstrated in twisted bilayer graphene system in recent experiments. In the presence of small gap, we show the localization generically occurs due to non-periodic nature of quasicrystal, which is evidenced by the inverse participation ratio and the energy level statistics. We understand the origin of such localization by approximating the dodecagonal quasicrystals as an impurity scattering problem.
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Submitted 21 December, 2018;
originally announced December 2018.
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Odd-even phonon transport effects in strained carbon atomic chains bridging graphene nanoribbon electrodes
Authors:
Hu Sung Kim,
Tae Hyung Kim,
Yong-Hoon Kim
Abstract:
Based on first-principles approaches, we study the ballistic phonon transport properties of finite monatomic carbon chains stretched between graphene nanoribbons, an $sp$-$sp^2$ hybrid carbon nanostructure that has recently seen significant experimental advances in its synthesis. We find that the lattice thermal conductance anomalously increases with tensile strain for the even-numbered carbon cha…
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Based on first-principles approaches, we study the ballistic phonon transport properties of finite monatomic carbon chains stretched between graphene nanoribbons, an $sp$-$sp^2$ hybrid carbon nanostructure that has recently seen significant experimental advances in its synthesis. We find that the lattice thermal conductance anomalously increases with tensile strain for the even-numbered carbon chains that adopt the alternating bond-length polyyne configuration. On the other hand, in the odd-numbered carbon chain cases, which assume the equal bond-length cumulene configuration, phonon conductance decreases with increasing strain. We show that the strong odd-even phonon transport effects originate from the characteristic longitudinal acoustic phonon modes of carbon wires and their unique strain-induced redshifts with respect to graphene nanoribbon phonon modes. The novel phonon transport properties and their atomistic mechanisms revealed in this work will provide valuable guidelines in de-signing hybrid carbon nanostructures for next-generation electronic, bio, and energy device applications.
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Submitted 10 August, 2018;
originally announced August 2018.
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Constrained-search density functional study of quantum transport in two-dimensional vertical heterostructures
Authors:
Han Seul Kim,
Yong-Hoon Kim
Abstract:
Based on a microcanonical picture that maps the steady-state quantum transport process to a drain-to-source excitation, we develop a constrained-search density functional formalism for finite-bias quantum transport calculations. By variationally minimizing the total energy of an electrode-channel-electrode system without introducing separate bulk electrode information, ambiguities in identifying i…
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Based on a microcanonical picture that maps the steady-state quantum transport process to a drain-to-source excitation, we develop a constrained-search density functional formalism for finite-bias quantum transport calculations. By variationally minimizing the total energy of an electrode-channel-electrode system without introducing separate bulk electrode information, ambiguities in identifying its nonequilibrium electronic structure under a bias is reduced and finite electrode cases can be naturally treated. We apply the approach to vertically stacked van der Waals heterostructures made of a hexagonal boron nitride (hBN) channel sandwiched by single-layer graphene electrodes, which so far could not be treated within first-principles calculations. We find that the experimentally observed negative differential resistance originates from the hBN defect-mediated hybridizations between two graphene states, and concurrently obtain a high-bias linear current increase that was not captured in previous semiclassical treatments. Going beyond the capability of existing $ab\ initio$ nonequilibrium quantum transport simulation methods, the developed formalism will provide valuable atomistic information in the development of next-generation nanodevices.
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Submitted 10 August, 2018;
originally announced August 2018.
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Nitrogen do** of carbon nanoelectrodes for enhanced control of DNA translocation dynamics
Authors:
Sang Won Jung,
Han Seul Kim,
Art E. Cho,
Yong-Hoon Kim
Abstract:
Controlling the dynamics of DNA translocation is a central issue in the emerging nanopore-based DNA sequencing. To address the potential of heteroatom do** of carbon nanostructures to achieve this goal, herein we carry out atomistic molecular dynamics simulations for single-stranded DNAs translocating between two pristine or doped carbon nanotube (CNT) electrodes. Specifically, we consider the s…
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Controlling the dynamics of DNA translocation is a central issue in the emerging nanopore-based DNA sequencing. To address the potential of heteroatom do** of carbon nanostructures to achieve this goal, herein we carry out atomistic molecular dynamics simulations for single-stranded DNAs translocating between two pristine or doped carbon nanotube (CNT) electrodes. Specifically, we consider the substitutional nitrogen do** of capped CNT (capCNT) electrodes and perform two types of molecular dynamics simulations for the entrapped and translocating single-stranded DNAs. We find that the substitutional nitrogen do** of capCNTs stabilizes the edge-on nucleobase configurations rather than the original face-on ones and slows down the DNA translocation speed by establishing hydrogen bonds between the N dopant atoms and nucleobases. Due to the enhanced interactions between DNAs and N-doped capCNTs, the duration time of nucleobases within the nanogap was extended by up to ~ 290 % and the fluctuation of the nucleobases was reduced by up to ~ 70 %. Given the possibility to be combined with extrinsic light or gate voltage modulation methods, the current work demonstrates that the substitutional nitrogen do** is a promising direction for the control of DNA translocation dynamics through a nanopore or nanogap based of carbon nanomaterials.
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Submitted 23 August, 2017;
originally announced August 2017.
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Stretching-induced conductance variations as fingerprints of contact configurations in single-molecule junctions
Authors:
Yong-Hoon Kim,
Hu Sung Kim,
Juho Lee,
Makusu Tsutsui,
Tomoji Kawai
Abstract:
Molecule-electrode contact atomic structures are a critical factor that characterizes molecular devices, but their precise understanding and control still remain elusive. Based on combined first-principles calculations and single-molecule break junction experiments, we herein establish that the conductance of alkanedithiolate junctions can both increase and decrease with mechanical stretching and…
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Molecule-electrode contact atomic structures are a critical factor that characterizes molecular devices, but their precise understanding and control still remain elusive. Based on combined first-principles calculations and single-molecule break junction experiments, we herein establish that the conductance of alkanedithiolate junctions can both increase and decrease with mechanical stretching and the specific trend is determined by the S-Au linkage coordination number (CN) or the molecule-electrode contact atomic structure. Specifically, we find that the mechanical pulling results in the conductance increase for the junctions based on S-Au CN two and CN three contacts, while the conductance is minimally affected by stretching for junctions with the CN one contact and decreases upon the formation of Au monoatomic chains. Detailed analysis unravels the mechanisms involving the competition between the stretching-induced upshift of the highest occupied molecular orbital-related states toward the Fermi level of electrodes and the deterioration of molecule-electrode electronic couplings in different contact CN cases. Moreover, we experimentally find a higher chance to observe the conductance enhancement mode under a faster elongation speed, which is explained by ab initio molecular dynamics simulations that reveal an important role of thermal fluctuations in aiding deformations of contacts into low-coordination configurations that include monoatomic Au chains. Pointing out the insufficiency in previous notions of associating peak values in conductance histograms with specific contact atomic structures, this work resolves the controversy on the origins of ubiquitous multiple conductance peaks in S-Au-based single-molecule junctions.
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Submitted 24 May, 2017;
originally announced May 2017.
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Engineering One-Dimensional Quantum Stripes from Superlattices of Two-Dimensional Layered Materials
Authors:
J. H. Gruenewald,
J. Kim,
H. S. Kim,
J. M. Johnson,
J. Hwang,
M. Souri,
J. Terzic,
S. H. Chang,
A. Said,
J. W. Brill,
G. Cao,
H. -Y. Kee,
S. S. A. Seo
Abstract:
One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mot…
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One-dimensional (1D) quantum systems, which are predicted to exhibit novel states of matter in theory, have been elusive in experiment. Here we report a superlattice method of creating artificial 1D quantum stripes, which offers dimensional tunability from two- to one-dimensions. As a model system, we have fabricated 1D iridium (Ir) stripes using a-axis oriented superlattices of a relativistic Mott insulator Sr2IrO4 and a wide bandgap insulator LaSrGaO4, both of which are crystals with layered structure. In addition to the successful formation of 1D Ir-stripe structure, we have observed 1D quantum-confined electronic states from optical spectroscopy and resonant inelastic x-ray scattering. Since this 1D superlattice approach can be applied to a wide range of layered materials, it opens a new era of 1D science.
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Submitted 24 October, 2016;
originally announced October 2016.
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Optical Characterization of PtSi/Si by Spectroscopic Ellipsometry
Authors:
Van Long Le,
Tae Jung Kim,
Han Gyeol Park,
Hwa Seob Kim,
Chang Hyun Yoo,
Hyoung Uk Kim,
Young Dong Kim,
Junsoo Kim,
Solyee Im,
Won Chul Choi,
Seung Eon Moon,
Eun Soo Nam and
Abstract:
We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interfac…
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We report optical characterization of PtSi films for thermoelectric device applications by nondestructive spectroscopic ellipsometry (SE). Pt monolayer and Pt-Si multilayer which consists of 3 pairs of Pt and Si layers were deposited on p-doped-silicon substrates by sputtering method and then rapid annealing process was done to form PtSi films through intermixing of Pt and Si atoms at the interface. Pseudodielectric function data <ε> = <ε1> + i<ε2> of the PtSi/Si samples were obtained from 1.12 to 6.52 eV by using spectroscopic ellipsometry. Employing Tauc-Lorentz and Drude models, the dielectric function (ε) of PtSi films were determined. We found that the composition ratio of Pt:Si is nearly 1:1 for PtSi monolayer and we observed transitions between occupied and unoccupied states in Pt 5d states. We also observed formation of PtSi layers in Pt-Si multilayer sample. The SE results were confirmed by the transmission electron microscopy and energy dispersive X-ray spectroscopy.
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Submitted 12 June, 2016;
originally announced June 2016.
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Nanoscale Superconducting Honeycomb Charge Order in IrTe2
Authors:
Hyo Sung Kim,
Sooran Kim,
Kyoo Kim,
Byung Il Min,
Yong-Heum Cho,
Lihai Wang,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
Entanglement of charge orderings and other electronic orders such as superconductivity is in the core of challenging physics issues of complex materials including high temperature superconductivity. Here, we report on the observation of a unique nanometer scale honeycomb charge ordering of the cleaved IrTe2 surface, which hosts a superconducting state. IrTe2 was recently established to exhibit an…
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Entanglement of charge orderings and other electronic orders such as superconductivity is in the core of challenging physics issues of complex materials including high temperature superconductivity. Here, we report on the observation of a unique nanometer scale honeycomb charge ordering of the cleaved IrTe2 surface, which hosts a superconducting state. IrTe2 was recently established to exhibit an intriguing cascade of stripe charge orders. The stripe phases coexist with a hexagonal phase, which is formed locally and falls into a superconducting state below 3 K. The atomic and electronic structures of the honeycomb and hexagon pattern of this phase are consistent with the charge order nature but the superconductivity does not survive on neighboring stripe charge order domains. The present work provides an intriguing physics issue and a new direction of functionalization for two dimensional materials.
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Submitted 23 May, 2016;
originally announced May 2016.
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Controlling transport properties of graphene nanoribbons by codo**-induced edge distortions
Authors:
Hyo Seok Kim,
Seong Sik Kim,
Han Seul Kim,
Yong-Hoon Kim
Abstract:
One notable manifestation of the peculiar edge-localized states in zigzag graphene nanoribbons (zGNRs) is the p-type (n-type) characteristics of nitrogen (boron) edge-doped GNRs, and such behavior was so far considered to be exclusive for zGNRs. Carrying out first-principles electronic structure and quantum transport calculations, we herein show that the donor-acceptor transition behavior can also…
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One notable manifestation of the peculiar edge-localized states in zigzag graphene nanoribbons (zGNRs) is the p-type (n-type) characteristics of nitrogen (boron) edge-doped GNRs, and such behavior was so far considered to be exclusive for zGNRs. Carrying out first-principles electronic structure and quantum transport calculations, we herein show that the donor-acceptor transition behavior can also arise in the B/N edge-doped armchair GNRs (aGNRs) by introducing a bipolar P codopant atom into the energetically most favorable nearest neighbor edge sites. The n-type (p-type) transport properties of B,P (N,P) co-doped aGNRs are also shown to be superior to those of reference single N (B) doped aGNRs in that the valence (conduction) band edge conductance spectra are better preserved. Disentangling the chemical do** and structural distortion effects, we will demonstrate that the latter plays an important role in determining the transport type and explains the donor-acceptor transition feature as well as the bipolar character of P-doped aGNRs. We thus propose the systematic modification of GNR edge atomic structures via co-do** as a novel approach to control charge transport characteristics of aGNRs.
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Submitted 30 December, 2015;
originally announced December 2015.
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Carbon nanobuds based on carbon nanotube caps: A first-principles study
Authors:
Ji Il Choi,
Hyo Seok Kim,
Han Seul Kim,
Ga In Lee,
Jeung Ku Kang,
Yong-Hoon Kim
Abstract:
Based on density functional theory calculations, we here show that the formation of a fullerene C$_{60}$ carbon "nanobud" (CNB) on carbon nanotube (CNT) caps is energetically more favorable than that on CNT sidewalls. The dominant CNB formation mode for CNT caps is found to be the [2+2] cycloaddition reaction as in the conventional CNT sidewall case. However, it is identified to be exothermic in c…
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Based on density functional theory calculations, we here show that the formation of a fullerene C$_{60}$ carbon "nanobud" (CNB) on carbon nanotube (CNT) caps is energetically more favorable than that on CNT sidewalls. The dominant CNB formation mode for CNT caps is found to be the [2+2] cycloaddition reaction as in the conventional CNT sidewall case. However, it is identified to be exothermic in contrast to the endothermic reaction on CNT sidewalls. Computed reaction pathways further demonstrate that the formation (dissociation) barrier for the CNT cap-based CNB is slightly lower (significantly higher) than that of the CNT sidewall-based CNB, indicating an easier CNB formation as well as a higher structural stability. Additionally, performing matrix Green's function calculations, we study the charge transport properties of the CNB/metal electrode interfaces, and show that the C$_{60}$ bonding to the CNT cap or open end induces resonant transmissions near the Fermi level. It is also found that the good electronic linkage in the CNT cap-C$_{60}$ cycloaddition bonds results in the absence of quantum interference patterns, which contrasts the case of the CNB formed on an open-ended CNT that shows a Fano resonance profile.
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Submitted 27 December, 2015;
originally announced December 2015.
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Honeycomb Charge Ordering in IrTe$_2$
Authors:
Hyo Sung Kim,
Soo-Ran Kim,
Kyoo Kim,
Byung Il Min,
Yong-Heum Cho,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
We report on the observation of a unique honeycomb charge ordering of the cleaved IrTe$_2$ surface by high-resolution scanning tunneling microscopy (STM) and spectroscopy (STS). IrTe$_2$ was recently established to exhibit intriguing stripe charge orderings. Here, we show that the stripe charge order coexists with a metastable honeycomb phase formed locally. The atomic and electronic structures of…
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We report on the observation of a unique honeycomb charge ordering of the cleaved IrTe$_2$ surface by high-resolution scanning tunneling microscopy (STM) and spectroscopy (STS). IrTe$_2$ was recently established to exhibit intriguing stripe charge orderings. Here, we show that the stripe charge order coexists with a metastable honeycomb phase formed locally. The atomic and electronic structures of the honeycomb phase are consistent with the stripe phase indicating unambiguously its charge order nature. A simple model of the honeycomb structure is suggested based on the overlap of three degenerate stripe orders, which is analogous to the 3$q$ state description of a skyrmion. We suggest that the honeycomb charge order can be a route to an exotic Dirac electron system.
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Submitted 2 January, 2019; v1 submitted 4 May, 2015;
originally announced May 2015.
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Recent progress in atomistic simulation of electrical current DNA sequencing
Authors:
Han Seul Kim,
Yong-Hoon Kim
Abstract:
We review recent advances in the DNA sequencing based on the measurement of transverse electrical currents. Device configurations proposed in the literature are classified according to whether the molecular fingerprints appear as the major (Mode I) or perturbing (Mode II) current signals. Scanning tunneling microscope and tunneling electrode gap configurations belong to the former category, while…
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We review recent advances in the DNA sequencing based on the measurement of transverse electrical currents. Device configurations proposed in the literature are classified according to whether the molecular fingerprints appear as the major (Mode I) or perturbing (Mode II) current signals. Scanning tunneling microscope and tunneling electrode gap configurations belong to the former category, while the nanochannels with or without an embedded nanopore belong to the latter. The molecular sensing mechanisms of Modes I and II roughly correspond to the electron tunneling and electrochemical gating, respectively. Special emphasis will be given on the computer simulation studies, which have been playing a critical role in the initiation and development of the field. We also highlight low-dimensional nanomaterials such as carbon nanotubes, graphene, and graphene nanoribbons that allow the novel Mode II approach. Finally, several issues in previous computational studies are discussed, which points to future research directions toward more reliable simulation of electrical current DNA sequencing devices.
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Submitted 12 November, 2014;
originally announced November 2014.
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Structural versus electronic distortions of symmetry-broken IrTe$_2$
Authors:
Hyo Sung Kim,
Tae-Hwan Kim,
Junjie Yang,
Sang-Wook Cheong,
Han Woong Yeom
Abstract:
We investigate atomic and electronic structures of the intriguing low temperature phase of IrTe2 using high-resolution scanning tunneling microscopy and spectroscopy. We confirm various stripe superstructures such as $\times$3, $\times$5, and $\times$8. The strong vertical and lateral distortions of the lattice for the stripe structures are observed in agreement with recent calculations. The spati…
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We investigate atomic and electronic structures of the intriguing low temperature phase of IrTe2 using high-resolution scanning tunneling microscopy and spectroscopy. We confirm various stripe superstructures such as $\times$3, $\times$5, and $\times$8. The strong vertical and lateral distortions of the lattice for the stripe structures are observed in agreement with recent calculations. The spatial modulations of electronic density of states are clearly identified as separated from the structural distortions. These structural and spectroscopic characteristics are not consistent with the charge-density wave and soliton lattice model proposed recently. Instead, we show that the Ir (Te) dimerization together with the Ir 5d charge ordering can explain these superstructures, supporting the Ir dimerization mechanism of the phase transition.
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Submitted 21 October, 2014;
originally announced October 2014.
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Atomistic Mechanisms of Codo**-Induced p- to n-Type Conversion in Nitrogen-Doped Graphene
Authors:
Hyo Seok Kim,
Han Seul Kim,
Seong Sik Kim,
Yong-Hoon Kim
Abstract:
It was recently shown that nitrogen-doped graphene (NG) can exhibit both p- and n-type characters depending on the C-N bonding nature, which represents a significant bottleneck for the development of graphene-based electronics. Based on first-principles calculations, we herein scrutinise the correlations between atomic and electronic structures of NG, and particularly explore the feasibility of co…
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It was recently shown that nitrogen-doped graphene (NG) can exhibit both p- and n-type characters depending on the C-N bonding nature, which represents a significant bottleneck for the development of graphene-based electronics. Based on first-principles calculations, we herein scrutinise the correlations between atomic and electronic structures of NG, and particularly explore the feasibility of converting p-type NG with pyridinic, pyrrolic, and nitrilic N into n- or bipolar type by introducing an additional dopant atom. Out of the nine candidates, B, C, O, F, Al, Si, P, S, and Cl, we find that the B-, Al-, and P-codo** can anneal even relatively large vacancy defects in p-type NG. It will be also shown that, while the NG with pyridinic N can be converted into n-type via codo**, only the bipolar type conversion can be achieved for the NG with nitrilic or pyrrolic N. The amount of work function reduction was up to 0.64 eV for the pyridinic N next to a monovacancy. The atomistic origin of such diverse type changes is analysed based on Mulliken and crystal orbital Hamiltonian populations, which provide us with a framework to connect the local bonding chemistry with macroscopic electronic structure in doped and/or defective graphene. Moreover, we demonstrate that the proposed codo** scheme can recover the excellent charge transport properties of pristine graphene. Both the type conversion and conductance recovery in codoped NG should have significant implications for the electronic and energy device applications.
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Submitted 12 October, 2014;
originally announced October 2014.
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Conductance recovery and spin polarization in boron and nitrogen codoped graphene nanoribbons
Authors:
Seong Sik Kim,
Han Seul Kim,
Hyo Seok Kim,
Yong-Hoon Kim
Abstract:
We present an ab initio study of the structural, electronic, and quantum transport properties of B-N-complex edge-doped graphene nanoribbons (GNRs). We find that the B-N edge codop-ing is energetically a very favorable process and furthermore can achieve novel do** effects that are absent for the single B or N do**. The compensation effect between B and N is predicted to generally recover the…
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We present an ab initio study of the structural, electronic, and quantum transport properties of B-N-complex edge-doped graphene nanoribbons (GNRs). We find that the B-N edge codop-ing is energetically a very favorable process and furthermore can achieve novel do** effects that are absent for the single B or N do**. The compensation effect between B and N is predicted to generally recover the excellent electronic transport properties of pristine GNRs. For the zigzag GNRs, however, the spatially localized B-N defect states selectively destroy the doped-side spin-polarized GNR edge currents at the valence and conduction band edges. We show that the energetically and spatially spin-polarized currents survive even in the fully ferromagnetic metallic state and heterojunction configurations. This suggests a simple yet ef-ficient scheme to achieve effectively smooth GNR edges and graphene-based spintronic de-vices.
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Submitted 8 July, 2014;
originally announced July 2014.
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Prediction of ultra-high ON/OFF ratio nanoelectromechanical switching from covalently-bound C60 chains
Authors:
Han Seul Kim,
Jhinhwan Lee,
Yong-Hoon Kim
Abstract:
Applying a first-principles computational approach, we have systematically analyzed the effects of [2+2] cycloaddition oligomerization of fullerene C60 chains on their junction electronic and charge transport properties. For hypothetical infinite C60 chains, we first establish that the polymerization can in principle increase conductance by several orders of magnitude due to the strong orbital hyb…
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Applying a first-principles computational approach, we have systematically analyzed the effects of [2+2] cycloaddition oligomerization of fullerene C60 chains on their junction electronic and charge transport properties. For hypothetical infinite C60 chains, we first establish that the polymerization can in principle increase conductance by several orders of magnitude due to the strong orbital hybridizations and band formation. On the other hand, our simulations of the constant-height scanning tunneling microscope (STM) configuration shows that, in agreement with the recent experimental conclusion, the junction electronic structure and device characteristics are virtually unaffected by the C60 chain oligomerization. We further predict that the switching characteristics including even the ON/OFF-state assignment will sensitively depend on the substrate metal species due to the Fermi-level pinning at the substrate-side contact and the subsequent energy level bending toward the STM tip-side contact. We finally demonstrate that a force-feedbacked nanoelectromechanical approach in which both of the C60-electrode distances are kept at short distances before and after switching operations can achieve a metal-independent and significantly improved switching performance due to the Fermi-level pinning in both contacts and the large intrinsic conductance switching capacity of the C60 chain oligomerization.
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Submitted 9 October, 2013;
originally announced October 2013.
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Distinct mechanisms of DNA sensing based on N-doped carbon nanotubes with enhanced conductance and chemical selectivity
Authors:
Han Seul Kim,
Seung ** Lee,
Yong-Hoon Kim
Abstract:
Carrying out first-principles calculations, we study N-doped capped carbon nanotube (CNT) electrodes applied to DNA sequencing. While we obtain for the face-on nucleobase junction configurations a conventional conductance ordering where the largest signal results from guanine according to its high highest occupied molecular orbital (HOMO) level, we extract for the edge-on counterparts a distinct c…
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Carrying out first-principles calculations, we study N-doped capped carbon nanotube (CNT) electrodes applied to DNA sequencing. While we obtain for the face-on nucleobase junction configurations a conventional conductance ordering where the largest signal results from guanine according to its high highest occupied molecular orbital (HOMO) level, we extract for the edge-on counterparts a distinct conductance ordering where the low-HOMO thymine provides the largest signal. The edge-on mode is shown to operate based on a novel molecular sensing mechanism that reflects the chemical connectivity between N-doped CNT caps that can act both as electron donors and electron acceptors and DNA functional groups that include the hyperconjugated thymine methyl group.
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Submitted 8 July, 2014; v1 submitted 13 December, 2012;
originally announced December 2012.
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Topological Quantum Phase Transition in 5$d$ Transition Metal Oxide Na$_2$IrO$_3$
Authors:
Choong H. Kim,
Heung Sik Kim,
Hogyun Jeong,
Hosub **,
Jaejun Yu
Abstract:
We predict a quantum phase transition from normal to topological insulators in the 5$d$ transition metal oxide Na$_2$IrO$_3$, where the transition can be driven by the change of the long-range hop** and trigonal crystal field terms. From the first-principles-derived tight-binding Hamiltonian we determine the phase boundary through the parity analysis. In addition, our first-principles calculatio…
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We predict a quantum phase transition from normal to topological insulators in the 5$d$ transition metal oxide Na$_2$IrO$_3$, where the transition can be driven by the change of the long-range hop** and trigonal crystal field terms. From the first-principles-derived tight-binding Hamiltonian we determine the phase boundary through the parity analysis. In addition, our first-principles calculations for Na$_2$IrO$_3$ model structures show that the interlayer distance can be an important parameter for the existence of a three-dimensional strong topological insulator phase. Na$_2$IrO$_3$ is suggested to be a candidate material which can have both a nontrivial topology of bands and strong electron correlations.
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Submitted 6 March, 2012; v1 submitted 28 January, 2012;
originally announced January 2012.
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Highly Quantum-Confined InAs Nanoscale Membranes
Authors:
Kuniharu Takei,
Hui Fang,
Bala Kumar,
Rehan Kapadia,
Qun Gao,
Morten Madsen,
Ha Sul Kim,
Chin-Hung Liu,
Elena Plis,
Sanjay Krishna,
Hans A. Bechtel,
**g Guo,
Ali Javey
Abstract:
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the qu…
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Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors.
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Submitted 13 September, 2011;
originally announced September 2011.
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Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors
Authors:
Hyunhyub Ko,
Kuniharu Takei,
Rehan Kapadia,
Steven Chuang,
Hui Fang,
Paul W. Leu,
Kartik Ganapathi,
Elena Plis,
Ha Sul Kim,
Szu-Ying Chen,
Morten Madsen,
Alexandra C. Ford,
Yu-Lun Chueh,
Sanjay Krishna,
Sayeef Salahuddin,
Ali Javey
Abstract:
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established…
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Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm.
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Submitted 4 August, 2011;
originally announced August 2011.
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Stress-induced R-MA-MC-T symmetry changes in BiFeO3 films
Authors:
J. H. Nam,
H. S. Kim,
A. J. Hatt,
N. A. Spaldin,
H. M. Christen
Abstract:
The recent discovery of a stress-induced structural phase transition in the single-component perovskite BiFeO3 has revived interest in this lead-free ferroelectric. The coexistence of different phases may lead to large piezoelectric coefficients, a property typically associated with complex solid solutions of lead-based perovskites. Here we report combined experimental and computational results sh…
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The recent discovery of a stress-induced structural phase transition in the single-component perovskite BiFeO3 has revived interest in this lead-free ferroelectric. The coexistence of different phases may lead to large piezoelectric coefficients, a property typically associated with complex solid solutions of lead-based perovskites. Here we report combined experimental and computational results showing that the stress-induced phase transitions in BiFeO3 follow the path of rhombohedral(R)-to-monoclinic(MA)-to-monoclinic(MC)-to-tetragonal(T), where both MC and T show highly enhanced c/a ratios. This R-MA-MC-T sequence is otherwise observed only near morphotropic phase boundaries (MPBs) in lead-based perovskites (i.e. near a compositionally induced phase instability), where it is controlled by electric field, temperature, or composition. Our results represent the first time that this evolution has been induced in a single component system using strain alone, and show that substrate- imposed symmetry lowering results in a similar phase instability as the proximity to a MPB in solid solutions.
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Submitted 1 October, 2010;
originally announced October 2010.
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Tunnel magnetoresistance due to Coulomb blockade effects in quasi-one dimensional polymer nanofibers
Authors:
H. J. Lee,
A. N. Aleshin,
S. H. Jhang,
H. S. Kim,
M. J. Goh,
K. Akagi,
J. S. Brooks,
Y. W. Park
Abstract:
We report on the low temperature tunnel magnetoresistance (MR) in quasi one-dimensional (1D) nanofibers made of conjugated polymers. The MR voltage bias dependence reveals an enhancement (at low biases) and the oscillatory behavior at temperatures below 10 K. The low temperature isotropic MR behavior has been attributed to the charging effects in the polymer nanofiber which considered as an arra…
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We report on the low temperature tunnel magnetoresistance (MR) in quasi one-dimensional (1D) nanofibers made of conjugated polymers. The MR voltage bias dependence reveals an enhancement (at low biases) and the oscillatory behavior at temperatures below 10 K. The low temperature isotropic MR behavior has been attributed to the charging effects in the polymer nanofiber which considered as an array of small conducting regions separated by nano barriers. These effects at low temperatures lead to the single electron tunneling represented by the Coulomb blockade regime as well as to an enhancement and oscillation of the tunnel MR.
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Submitted 8 December, 2009;
originally announced December 2009.
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The electronic structure of epitaxially stabilized 5d perovskite Ca_{1-x}Sr_xIrO_3 (x = 0, 0.5, and 1) thin films: the role of strong spin-orbit coupling
Authors:
S. Y. Jang,
H. S. Kim,
S. J. Moon,
W. S. Choi,
B. C. Jeon,
J. Yu,
T. W. Noh
Abstract:
We have investigated the electronic structure of meta-stable perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca1-xSrxIrO3, which has a hexagonal or post perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO3 subs…
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We have investigated the electronic structure of meta-stable perovskite Ca1-xSrxIrO3 (x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca1-xSrxIrO3, which has a hexagonal or post perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO3 substrates using epi-stabilization technique. The transport properties of the perovskite Ca1-xSrxIrO3 films systematically changed from nearly insulating (or semi-metallic) for x = 0 to bad metallic for x = 1. Due to the extended wavefunctions, 5d electrons are usually delocalized. However, the strong spin-orbit coupling in Ca1-xSrxIrO3 results in the formation of effective total angular momentum Jeff = 1/2 and 3/2 states, which puts Ca1-xSrxIrO3 in the vicinity of a metal-insulator phase boundary. As a result, the electrical properties of the Ca1-xSrxIrO3 films are found to be sensitive to x and strain.
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Submitted 24 November, 2009;
originally announced November 2009.
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Direct mechanical mixing in a nanoelectromechanical diode
Authors:
Hyun S. Kim,
Hua Qin,
Robert H. Blick
Abstract:
We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10-1000 MHz. The device is made of a mechanically flexible pillar with a length of 240 nm and a diameter of 50 nm, placed between two electrodes in an impedance matched coplanar wave guide. We find a non-linear IV-characteristic, which enables ra…
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We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10-1000 MHz. The device is made of a mechanically flexible pillar with a length of 240 nm and a diameter of 50 nm, placed between two electrodes in an impedance matched coplanar wave guide. We find a non-linear IV-characteristic, which enables radio frequency mixing of two electromagnetic signals via the nanomechanical transistor. Potential applications for this mixer are ultrasensitive displacement detection or signal processing in communication electronic circuits requiring high-throughput insulation.
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Submitted 16 October, 2007; v1 submitted 12 September, 2007;
originally announced September 2007.
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Self Excitation of Nano-Mechanical Pillars
Authors:
Hyun S. Kim,
Hua Qin,
Robert H. Blick
Abstract:
Self excitation is a mechanism which is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators [1], where a good example are the overall visible wind farm turbines [2]. In other words, a static force, like wind acting on the rotor blades, can generate a resonant excitatio…
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Self excitation is a mechanism which is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators [1], where a good example are the overall visible wind farm turbines [2]. In other words, a static force, like wind acting on the rotor blades, can generate a resonant excitation at a certain mechanical frequency. For nanomechanical systems [3,4,5] such a self excitation (SE) mechanism is highly desirable as well, since it can generate mechanical oscillations at radio frequencies by simply applying a DC bias voltage. This is of great importance for low-power signal communication devices and detectors, as well as for mechanical computing elements. For a particular nanomechanical system - the single electron shuttle - this effect was predicted some time ago by Gorelik et al. [6]. Here, we use a nano-electromechanical single electron transistor (NEMSET) to demonstrate self excitation for both the soft and hard regime, respectively. The ability to use self excitation in nanomechanical systems may enable the detection of quantum mechanical backaction effects [7] in direct tunneling, macroscopic quantum tunneling [8], and rectification [9]. All these effects have so far been over shadowed by the large driving voltages, which had to be applied.
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Submitted 13 August, 2007;
originally announced August 2007.
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Coulomb-blockade transport in quasi-one dimensional polymer nanofibers
Authors:
A. N. Aleshin,
H. J. Lee,
S. H. Jhang,
H. S. Kim,
K. Akagi,
Y. W. Park
Abstract:
We report the low temperature current-voltage (I-V) characteristics studies in quasi-one dimensional conducting polymer nanofibers. We find a threshold voltage Vt below which little current flows at temperatures below 30-40 K. For V > Vt current scales as (V/Vt - 1)^zeta, where zeta ~ 1.8-2.1 at high biases. Differential conductance oscillations are found whose magnitude increases as temperature…
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We report the low temperature current-voltage (I-V) characteristics studies in quasi-one dimensional conducting polymer nanofibers. We find a threshold voltage Vt below which little current flows at temperatures below 30-40 K. For V > Vt current scales as (V/Vt - 1)^zeta, where zeta ~ 1.8-2.1 at high biases. Differential conductance oscillations are found whose magnitude increases as temperature decreases below 10 K. We attribute the observed low temperature I-V behavior to Coulomb blockade effects with a crossover to Luttinger liquid-like behavior at high temperature. We demonstrate that at low temperatures such a doped conjugated polymer fiber can be considered as an array of small conducting regions separated by nanoscale barriers, where the Coulomb blockade tunneling is the dominant transport mechanism.
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Submitted 22 July, 2005; v1 submitted 2 June, 2005;
originally announced June 2005.
