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Tribopolymer Formation Mechanism on the RuO$_2$(110) Surface
Authors:
**g Yang,
Yubo Qi,
Hyeong-Seok D. Kim,
Andrew M. Rappe
Abstract:
Tribopolymer formed on the contacts of microelectromechanical and nanoelectromechanical system (MEMS/NEMS) devices is a major concern hampering their practical use in information technology. Conductive metal oxides, such as RuO$_2$ and ReO$_3$, have been regarded as promising candidate materials for MEMS/NEMS contacts due to their conductivity, hardness, and relatively chemically inert surfaces. H…
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Tribopolymer formed on the contacts of microelectromechanical and nanoelectromechanical system (MEMS/NEMS) devices is a major concern hampering their practical use in information technology. Conductive metal oxides, such as RuO$_2$ and ReO$_3$, have been regarded as promising candidate materials for MEMS/NEMS contacts due to their conductivity, hardness, and relatively chemically inert surfaces. However, recent experimental works demonstrate that trace amounts of polymer could still form on RuO$_2$ surfaces. In this study, we demonstrate the mechanism of this class of unexpected tribopolymer formation by conducting density functional theory based computational compression experiments with benzene as the contamination gas. First, mechanical force during compression changes the benzene molecules from slightly physisorbed to strongly chemisorbed. Further compression causes deformation and chemical linkage of the benzene molecules. Finally, the two contacts detach, with one having a complex organic molecule attached and the other with a more reactive surface. The complex organic molecule, which has an oxabicyclic segment, can be viewed as the rudiment of tribopolymer, and the more reactive surface can trigger the next adsorption--reaction--tribopolymer formation cycle. Based on these results, we also predict tribopolymer formation rates by using transition--state theory and the second--order rate law. This study deepens our understanding of tribopolymer formation (especially on metal oxides) and provides strategies for suppressing tribopolymerization.
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Submitted 13 June, 2017;
originally announced June 2017.
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Wallpaper Fermions and the Nonsymmorphic Dirac Insulator
Authors:
Benjamin J. Wieder,
Barry Bradlyn,
Zhijun Wang,
Jennifer Cano,
Youngkuk Kim,
Hyeong-Seok D. Kim,
A. M. Rappe,
C. L. Kane,
B. Andrei Bernevig
Abstract:
Recent developments in the relationship between bulk topology and surface crystal symmetry have led to the discovery of materials whose gapless surface states are protected by crystal symmetries. In fact, there exists only a very limited set of possible surface crystal symmetries, captured by the 17 "wallpaper groups." We show that a consideration of symmetry-allowed band degeneracies in the wallp…
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Recent developments in the relationship between bulk topology and surface crystal symmetry have led to the discovery of materials whose gapless surface states are protected by crystal symmetries. In fact, there exists only a very limited set of possible surface crystal symmetries, captured by the 17 "wallpaper groups." We show that a consideration of symmetry-allowed band degeneracies in the wallpaper groups can be used to understand previous topological crystalline insulators, as well as to predict new examples. In particular, the two wallpaper groups with multiple glide lines, $pgg$ and $p4g$, allow for a new topological insulating phase, whose surface spectrum consists of only a single, fourfold-degenerate, true Dirac fermion. Like the surface state of a conventional topological insulator, the surface Dirac fermion in this "nonsymmorphic Dirac insulator" provides a theoretical exception to a fermion doubling theorem. Unlike the surface state of a conventional topological insulator, it can be gapped into topologically distinct surface regions while kee** time-reversal symmetry, allowing for networks of topological surface quantum spin Hall domain walls. We report the theoretical discovery of new topological crystalline phases in the A$_2$B$_3$ family of materials in SG 127, finding that Sr$_2$Pb$_3$ hosts this new topological surface Dirac fermion. Furthermore, (100)-strained Au$_2$Y$_3$ and Hg$_2$Sr$_3$ host related topological surface hourglass fermions. We also report the presence of this new topological hourglass phase in Ba$_5$In$_2$Sb$_6$ in SG 55. For orthorhombic space groups with two glides, we catalog all possible bulk topological phases by a consideration of the allowed non-abelian Wilson loop connectivities, and we develop topological invariants for these systems. Finally, we show how in a particular limit, these crystalline phases reduce to copies of the SSH model.
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Submitted 21 July, 2018; v1 submitted 3 May, 2017;
originally announced May 2017.
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Adsorption of Benzene on the RuO2(110) Surface
Authors:
Hyeong-Seok D. Kim,
**g Yang,
Yubo Qi,
Andrew M. Rappe
Abstract:
Hydrocarbon tribopolymer, a type of polymer formed due to friction between surfaces, is a major impediment to the development of micro- and nanoelectromechanical systems (MEMS/NEMS) devices for industrial application. Tribopolymer buildup can prevent MEMS and NEMS from making or breaking electrical contact. We describe the adsorption of benzene (C6H6) on the RuO2(110) surface using density functio…
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Hydrocarbon tribopolymer, a type of polymer formed due to friction between surfaces, is a major impediment to the development of micro- and nanoelectromechanical systems (MEMS/NEMS) devices for industrial application. Tribopolymer buildup can prevent MEMS and NEMS from making or breaking electrical contact. We describe the adsorption of benzene (C6H6) on the RuO2(110) surface using density functional theory. This adsorption is an important initial step in the mechanism of hydrocarbon tribopolymer layer formation on MEMS and NEMS devices. The adsorption interaction is studied by considering three oxygen coverages of RuO2(110) and all the possible adsorption sites for benzene. We find that adsorption of benzene on O-poor RuO2(110) via C-Ru bonds is stronger than adsorption on the O-rich RuO2(110) via H-O bonds. For an in-depth study of the adsorption behavior, we include the van der Waals interaction for a holistic investigation. By incorporating the thermodynamic chemical potentials into the adsorption simulations, we describe a model that can provide guidance for realistic situations.
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Submitted 8 December, 2016;
originally announced December 2016.
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Calculation of a fluctuating entropic force by phase space sampling
Authors:
James T. Waters,
Harold D. Kim
Abstract:
A polymer chain pinned in space exerts a fluctuating force on the pin point in thermal equilibrium. The average of such fluctuating force is well understood from statistical mechanics as an entropic force, but little is known about the underlying force distribution. Here, we introduce two phase space sampling methods that can produce the equilibrium distribution of instantaneous forces exerted by…
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A polymer chain pinned in space exerts a fluctuating force on the pin point in thermal equilibrium. The average of such fluctuating force is well understood from statistical mechanics as an entropic force, but little is known about the underlying force distribution. Here, we introduce two phase space sampling methods that can produce the equilibrium distribution of instantaneous forces exerted by a terminally pinned polymer. In these methods, both the positions and momenta of mass points representing a freely jointed chain are perturbed in accordance with the spatial constraints and the Boltzmann distribution of total energy. The constraint force for each conformation and momentum is calculated using Lagrangian dynamics. Using terminally pinned chains in space and on a surface, we show that the force distribution is highly asymmetric with both tensile and compressive forces. Most importantly, the mean of the distribution, which is equal to the entropic force, is not the most probable force even for long chains. Our work provides insights into the mechanistic origin of entropic forces, and an efficient computational tool for unbiased sampling of the phase space of a constrained system.
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Submitted 14 April, 2015;
originally announced April 2015.
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Probing the elastic limit of DNA bending
Authors:
Tung T. Le,
Harold D. Kim
Abstract:
Many structures inside the cell such as nucleosomes and protein-mediated DNA loops contain sharply bent double-stranded (ds) DNA. Therefore, the energetics of strong dsDNA bending constitutes an essential part of cellular thermodynamics. Although the thermomechanical behavior of long dsDNA is well described by the worm-like chain (WLC) model, the length limit of such elastic behavior remains contr…
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Many structures inside the cell such as nucleosomes and protein-mediated DNA loops contain sharply bent double-stranded (ds) DNA. Therefore, the energetics of strong dsDNA bending constitutes an essential part of cellular thermodynamics. Although the thermomechanical behavior of long dsDNA is well described by the worm-like chain (WLC) model, the length limit of such elastic behavior remains controversial. To investigate the energetics of strong dsDNA bending, we measured the opening rate of small dsDNA loops with contour lengths of 40-200 bp using Fluorescence Resonance Energy Transfer (FRET). From the measured relationship of loop stability to loop size, we observed a transition between two separate bending regimes at a critical loop size below 100 bp. Above this loop size, the loop lifetime decreased with decreasing loop size in a manner consistent with an elastic bending stress. Below the critical loop size, however, the loop lifetime became less sensitive to loop size, indicative of softening of the double helix. The critical loop size was measured to be ~60 bp with sodium only and ~100 bp with 5 mM magnesium, which suggests that magnesium facilitates the softening transition. We show that our results are in quantitative agreement with the kinkable worm-like chain model. Furthermore, the model parameters constrained by our data can reproduce previously measured J factors between 50 and 200 bp. Our work provides powerful means to study dsDNA bending in the strong bending regime.
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Submitted 2 May, 2014;
originally announced May 2014.
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Excited exciton and biexciton localised states in a single quantum ring
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
A. Nicolet,
M. Potemski,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from…
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We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from the excited state to the ground state (? 1000 ps). As no significant excitonic Aharonov-Bohm oscillations occur up to 14 T, we conclude that phase coherence around the rim is inhibited as a consequence of height anisotropy in the quantum ring.
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Submitted 23 September, 2013;
originally announced September 2013.
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Asymmetry of localised states in a single quantum ring: polarization dependence of excitons and biexcitons
Authors:
H. D. Kim,
K. Kyhm,
R. A. Taylor,
G. Nogues,
K. C. Je,
E. H. Lee,
J. D. Song
Abstract:
We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was ob…
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We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was observed and the oscillator strengths were also compared using the photoluminescence decay rate. For perpendicular polarizations the biexciton exhibits twice the energy di erence seen for the exciton, a fact that may be attributed to a possible change in the selection rules for the lowered symmetry.
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Submitted 25 January, 2013;
originally announced January 2013.
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Photoemission Study of Rare-Earth Ditelluride Compounds (ReTe_2 : Re = La, Pr, Sm, and Gd)
Authors:
Jaegwan Chung,
Junghwan Park,
J. G. Park,
Byung-Hee Choi,
S. J. Oh,
E. J. Cho,
H. D. Kim,
Y. S. Kwon
Abstract:
We studied the electronic structure of rare-earth ditelluride (ReTe_2 : Re = La, Pr, Sm, and Gd) using photoemission spectroscopy. From the x-ray photoelectron spectroscopy (XPS) study of the 3d core levels of rare-earth elements, we found that all the rare earth elements are trivalent. We have also made theoretical calculations using the Gunnarsson and Schoenhammer approximation and multiplet c…
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We studied the electronic structure of rare-earth ditelluride (ReTe_2 : Re = La, Pr, Sm, and Gd) using photoemission spectroscopy. From the x-ray photoelectron spectroscopy (XPS) study of the 3d core levels of rare-earth elements, we found that all the rare earth elements are trivalent. We have also made theoretical calculations using the Gunnarsson and Schoenhammer approximation and multiplet calculations for the rare earth elements to find that the La and Gd~3d peaks are well explained using our calculations. There is no considerable change in the line-shape of the Te~3d peaks depending on different rare earth elements. On ther other hand, valence band spectra studied with the ultraviolet photoelectron spectroscopy (UPS) show a small change in the Te p band depending on rare-earth elements. According to the UPS data, LaTe_2 has very low carrier density at the Fermi level while SmTe_2 and PrTe_2 show strongly metallic band structure effects near the Fermi level.
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Submitted 27 October, 1999;
originally announced October 1999.
