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Quantum optimal control robust to $1/f^α$ noises using fractional calculus: voltage-controlled exchange in semiconductor spin qubits
Authors:
Bohdan Khromets,
Jonathan Baugh
Abstract:
Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. W…
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Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. When stationary charge noise is the dominant source of gate infidelity, we derive that the optimal exchange pulse is long and weak, with the broad shape of the symmetric beta distribution function with parameter $1-α/2$. The common practice of making exchange pulses fast and high-amplitude still remains beneficial in the case of strongly nonstationary noise dynamics, modeled as fractional Brownian motion. The proposed methods are applicable to the characterization and optimization of quantum gate operations in various voltage-controlled qubit architectures.
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Submitted 22 May, 2024; v1 submitted 21 May, 2024;
originally announced May 2024.
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Simulated Charge Stability in a MOSFET Linear Quantum Dot Array
Authors:
Zach D. Merino,
Bohdan Khromets,
Jonathan Baugh
Abstract:
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian t…
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In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for develo** scalable spin qubit quantum processors.
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Submitted 23 February, 2024;
originally announced February 2024.
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Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots
Authors:
Bohdan Khromets,
Zach D. Merino,
Jonathan Baugh
Abstract:
We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the…
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We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the presence of the global oscillating field, and a Control-Phase operation with the simultaneous control of g-factors and exchange couplings. We outline how to generalize the control scheme to multiqubit gate operations and the case of constrained or imperfect control of the Hamiltonian parameters.
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Submitted 12 February, 2024;
originally announced February 2024.
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Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
Authors:
A. Elbaroudy,
B. Khromets,
F. Sfigakis,
E. Bergeron,
Y. Shi,
M. C. A. Tam,
T. Blaikie,
George Nichols,
J. Baugh,
Z. R. Wasilewski
Abstract:
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th…
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Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.
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Submitted 19 April, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Optimizing lateral quantum dot geometries for reduced exchange noise
Authors:
Brandon Buonacorsi,
Marek Korkusinski,
Bohdan Khromets,
Jonathan Baugh
Abstract:
For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orb…
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For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise.
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Submitted 18 December, 2020;
originally announced December 2020.
