Showing 1–21 of 21 results for author: Khalid, S

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

Authors: Shoaib Khalid, Anderson Janotti, Bharat Medasani

Abstract: Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the ro… ▽ More Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the role of chalcogen vacancies and hydrogen impurity in bulk TMDs, reporting formation energies and thermodynamic and optical transition levels. We show that the S vacancy can explain recently observed cathodoluminescence spectra of MoS$_2$ flakes and predict similar optical levels in the other TMDs. In the case of the H impurity, we find it more stable sitting on an interstitial site in the Mo plane, acting as a shallow donor, and possibly explaining the often observed n-type conductivity in some TMDs. We also predict the frequencies of the local vibration modes for the H impurity, aiding its identification through Raman or infrared spectroscopy. △ Less

Submitted 23 February, 2024; originally announced February 2024.

Large Rashba splittings in bulk and monolayer of BiAs

Authors: Muhammad Zubair, Igor Evangelista, Shoaib Khalid, Bharat Medasani, Anderson Janotti

Abstract: Two-dimensional materials with Rashba split bands near the Fermi level are key to develo** upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here, we propose BiAs as a novel layered semiconductor with large Rashba splitting in bulk and monolayer forms. Using first-principles calculations, we determined the… ▽ More Two-dimensional materials with Rashba split bands near the Fermi level are key to develo** upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here, we propose BiAs as a novel layered semiconductor with large Rashba splitting in bulk and monolayer forms. Using first-principles calculations, we determined the lowest energy structure of BiAs and its basic electronic properties. Bulk BiAs has a layered crystal structure with two atoms in a rhombohedral primitive cell, similar to the parent Bi and As elemental phases. It is a semiconductor with a narrow and indirect band gap. The spin-orbit coupling leads to Rashba-Dresselhaus spin splitting and characteristic spin texture around the L-point in the Brillouin zone of the hexagonal conventional unit cell, with Rashba energy and Rashba coupling constant for valence (conduction) band of $E_R$= 137 meV (93 meV) and $α_R$= 6.05 eVÅ~(4.6 eVÅ). In monolayer form (i.e., composed of a BiAs bilayer), BiAs has a much larger and direct band gap at $Γ$, with a circular spin texture characteristic of a pure Rashba effect. The Rashba energy $E_R$= 18 meV and Rashba coupling constant $α_R$= 1.67 eVÅ of monolayer BiAs are quite large compared to other known 2D materials, and these values are shown to increase under tensile biaxial strain. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Comments: 15pages,9figures

The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides

Authors: Shoaib Khalid, Bharat Medasani, John L. Lyons, Darshana Wickramaratne, Anderson Janotti

Abstract: Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies… ▽ More Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies are due in part to shortcomings in prior first-principles calculations of defects in the semiconducting two-dimensional (2D) TMDs that have been used to explain experimental observations. Here we report results of hybrid density functional calculations for the chalcogen vacancy in a series of monolayer TMDs, correctly referencing the thermodynamic charge transition levels to the fundamental band gap (as opposed to the optical band gap). We find that the chalcogen vacancies are deep acceptors and cannot lead to n-type or p-type conductivity. Both the (0/$-1$) and ($-$1/$-$2) transition levels occur in the gap, leading to paramagnetic charge states S=1/2 and S=1, respectively, in a collinear-spin representation. We discuss trends in terms of the band alignments between the TMDs, which can serve as a guide to future experimental studies of vacancy behavior. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Authors: Hadass S. Inbar, Muhammad Zubair, Jason T. Dong, Aaron N Engel, Connor P. Dempsey, Yu Hao Chang, Shinichi Nishihaya, Shoaib Khalid, Alexei V. Fedorov, Anderson Janotti, Chris J. Palmstrøm

Abstract: Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth an… ▽ More Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. △ Less

Submitted 16 May, 2023; v1 submitted 1 February, 2023; originally announced February 2023.

Tuning the Band Topology of GdSb by Epitaxial Strain

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Aaron N. Engel, Shoaib Khalid, Connor P. Dempsey, Mihir Pendharkar, Yu Hao Chang, Shinichi Nishihaya, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in b… ▽ More Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature. △ Less

Submitted 18 April, 2023; v1 submitted 28 November, 2022; originally announced November 2022.

Defect engineering and Fermi-level tuning in half-Heusler topological semimetals

Authors: Shoaib Khalid, Hadass S. Inbar, Shouvik Chatterjee, Christopher J. Palmstrom, Bharat Medasani Anderson Janotti

Abstract: Three-dimensional topological semimetals host a range of interesting quantum phenomena related to band crossing that give rise to Dirac or Weyl fermions, and can be potentially engineered into novel quantum devices. Harvesting the full potential of these materials will depend on our ability to position the Fermi level near the symmetry-protected band crossings so that their exotic spin and charge… ▽ More Three-dimensional topological semimetals host a range of interesting quantum phenomena related to band crossing that give rise to Dirac or Weyl fermions, and can be potentially engineered into novel quantum devices. Harvesting the full potential of these materials will depend on our ability to position the Fermi level near the symmetry-protected band crossings so that their exotic spin and charge transport properties become prominent in the devices. Recent experiments on bulk and thin films of topological half-Heuslers show that the Fermi level is far from the symmetry-protected crossings, leading to strong interference from bulk bands in the observation of topologically protected surface states. Using density functional theory calculations we explore how intrinsic defects can be used to tune the Fermi level in the two representative half-Heusler topological semimetals PtLuSb and PtLuBi. Our results explain recent results of Hall and angle-resolved photoemission measurements. The calculations show that Pt vacancies are the most abundant intrinsic defects in these materials grown under typical growth conditions, and that these defects lead to excess hole densities that place the Fermi level significantly below the expected position in the pristine material. Directions for tuning the Fermi level by tuning chemical potentials are addressed. △ Less

Submitted 14 October, 2022; v1 submitted 10 August, 2022; originally announced August 2022.

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Mihir Pendharkar, Aaron N. Engel, Jason T. Dong, Shoaib Khalid, Yu Hao Chang, Taozhi Guo, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin… ▽ More Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study map** the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals. △ Less

Submitted 25 October, 2022; v1 submitted 4 August, 2022; originally announced August 2022.

Report number: Phys. Rev. Materials 6, L121201

Journal ref: Phys. Rev. Materials 6, L121201 (2022)

Electronic properties of the Weyl semimetals Co$_2$MnX (X=Si, Ge, Sn)

Authors: Abhishek Sharan, Felipe Crasto de Lima, Shoaib Khalid, Roberto H. Miwa, Anderson Janotti

Abstract: Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are charact… ▽ More Using first-principles electronic structure calculations, we show that ferromagnetic Heusler compounds Co$_2$MnX (X= Si, Ge, Sn) present non-trivial topological characteristics and belong to the category of Weyl semimetals. These materials exhibit two topologically interesting band crossings near the Fermi level. These band crossings have complex 3D geometries in the Brillouin zone and are characterized by non-trivial topology as Hopf links and chain-like nodal lines, that are protected by the perpendicular mirror planes. The spin-orbit interaction split these nodal lines into several zero-dimensional Weyl band crossings. Unlike previously known topologically non-trivial Heusler materials, these majority-spin band crossings lie in the band gap of minority spin bands, potentially facilitating its experimental realization. △ Less

Submitted 28 November, 2021; originally announced November 2021.

Optimal configurations and "Pauli crystals" of quantum clusters

Authors: Tin-Lun Ho, Saad Khalid

Abstract: Broken rotational and translational symmetries are the hallmarks of solid state materials. In contrast, quantum liquids and gases do not exhibit such properties. However, if we regard the logarithm of the absolute square of a quantum liquid as an energy ${\cal E}= -{\rm ln}|Ψ|^2$, a geometric pattern naturally occurs at the minimum, i.e. the optimal configuration. Such geometric patterns have rece… ▽ More Broken rotational and translational symmetries are the hallmarks of solid state materials. In contrast, quantum liquids and gases do not exhibit such properties. However, if we regard the logarithm of the absolute square of a quantum liquid as an energy ${\cal E}= -{\rm ln}|Ψ|^2$, a geometric pattern naturally occurs at the minimum, i.e. the optimal configuration. Such geometric patterns have recently been studied for non-interacting fermions, and have been named "Pauli crystals". However, such patterns exist in all interacting gases (Bose or Fermi), independent of statistics. Here, we present an algorithm to determine the optimal configurations of quantum clusters solely from the images of their densities and without theoretical inputs. We establish its validity by recovering a number of exact results, showing that it can identify the changes in the cluster's ground state which corresponds to phase transitions in bulk systems. △ Less

Submitted 22 July, 2021; originally announced July 2021.

Comments: Combined file of manuscript and supplementary materials. 5 figures in main text, 2 figures in supplementary materials

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Authors: Shouvik Chatterjee, Felipe Crasto de Lima, John A. Logan, Yuan Fang, Hadass Inbar, Aranya Goswami, Connor Dempsey, Shoaib Khalid, Tobias Brown-Heft, Yu-Hao Chang, Taozhi Guo, Daniel Pennacchio, Nathaniel Wilson, Jason Dong, Shalinee Chikara, Alexey Suslov, Alexei V. Fedorov, Dan Read, Jennifer Cano, Anderson Janotti, Christopher J. Palmstrom

Abstract: Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controll… ▽ More Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures. △ Less

Submitted 3 January, 2022; v1 submitted 23 December, 2020; originally announced December 2020.

Comments: 11 pages, 5 figures. Supplementary Material contains 6 sections and 16 figures

Journal ref: Physical Review Materials, 5, 124207 (2021)

Transparent mirror effect in twist-angle-disordered bilayer graphene

Authors: Sandeep Joy, Saad Khalid, Brian Skinner

Abstract: When light is incident on a medium with spatially disordered index of refraction, interference effects lead to near-perfect reflection when the number of dielectric interfaces is large, so that the medium becomes a "transparent mirror." We investigate the analog of this effect for electrons in twisted bilayer graphene (TBG), for which local fluctuations of the twist angle give rise to a spatially… ▽ More When light is incident on a medium with spatially disordered index of refraction, interference effects lead to near-perfect reflection when the number of dielectric interfaces is large, so that the medium becomes a "transparent mirror." We investigate the analog of this effect for electrons in twisted bilayer graphene (TBG), for which local fluctuations of the twist angle give rise to a spatially random Fermi velocity. In a description that includes only spatial variation of Fermi velocity, we derive the incident-angle-dependent localization length for the case of quasi-one-dimensional disorder by map** this problem onto one dimensional Anderson localization. The localization length diverges at normal incidence as a consequence of Klein tunneling, leading to a power-law decay of the transmission when averaged over incidence angle. In a minimal model of TBG, the modulation of twist angle also shifts the location of the Dirac cones in momentum space in a way that can be described by a random gauge field, and thus Klein tunneling is inexact. However, when the Dirac electron's incident momentum is large compared to these shifts, the primary effect of twist disorder is only to shift the incident angle associated with perfect transmission away from zero. These results suggest a mechanism for disorder-induced collimation, valley filtration, and energy filtration of Dirac electron beams, so that TBG offers a promising new platform for Dirac fermion optics. △ Less

Submitted 12 August, 2020; originally announced August 2020.

Comments: 10+3 pages, 6+1 figures

Journal ref: Phys. Rev. Research 2, 043416 (2020)

Trivial to nontrivial topology transition in rare-earth pnictides with epitaxial strain

Authors: Shoaib Khalid, Anderson Janotti

Abstract: The combination of magneto-transport and topological properties has brought great attention to rare-earth mono-pnictides semimetals. For some of them, like LaSb, it is unclear whether they show non-trivial topology or not based on density functional theory calculations and angular resolved photoemission spectroscopy measurements. Here, we use hybrid density functional theory to demonstrate that La… ▽ More The combination of magneto-transport and topological properties has brought great attention to rare-earth mono-pnictides semimetals. For some of them, like LaSb, it is unclear whether they show non-trivial topology or not based on density functional theory calculations and angular resolved photoemission spectroscopy measurements. Here, we use hybrid density functional theory to demonstrate that LaSb is in fact a trivial topological semimetal, in agreement with experiments, but on the verge of a transition to a topological phase. We show that under compressive epitaxial strain, the La $d$ band crosses the Sb $p$ band near the X$_3$ point in the Brillouin zone, stabilizing a topologically non-trivial phase, opening unique opportunities to probe the inter-relation between magneto-transport properties and the effects of band topology by examining epitaxially strained and unstrained thin films of the same material. △ Less

Submitted 28 August, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Comments: I want to change the title of my arxiv submission because the published version of this artcile has a slightly different title

Journal ref: Phys. Rev. B 102, 035151 Published 24 July 2020

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Authors: Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar, Taozhi Guo, Yu-Hao Chang, Elliot Young, Alexei V. Fedorov, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturat… ▽ More Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin. △ Less

Submitted 5 January, 2022; v1 submitted 14 February, 2020; originally announced February 2020.

Comments: 14 pages, 6 figures, Supplementary Information 11 pages, 10 figures

Journal ref: Science Advances, 7, eabe8971 (2021)

Hybrid functional calculations of electronic structure and carrier densities in rare-earth monopnictides

Authors: Shoaib Khalid, Abhishek Sharan, Anderson Janotti

Abstract: The structural parameters and electronic structure of rare-earth pnictides are calculated using density functional theory (DFT) with the Heyd, Scuseria, and Ernzerhof (HSE06) screened hybrid functional. We focus on RE-V compounds, with RE=La, Gd, Er, and Lu, and V=As, Sb, and Bi, and analyze the effects of spin-orbit coupling and treating the RE 4$f$ electrons as valence electrons in the projector… ▽ More The structural parameters and electronic structure of rare-earth pnictides are calculated using density functional theory (DFT) with the Heyd, Scuseria, and Ernzerhof (HSE06) screened hybrid functional. We focus on RE-V compounds, with RE=La, Gd, Er, and Lu, and V=As, Sb, and Bi, and analyze the effects of spin-orbit coupling and treating the RE 4$f$ electrons as valence electrons in the projector augmented wave approach. The results of HSE06 calculations are compared with DFT within the generalized gradient approximation (DFT-GGA) and other previous calculations. We find that all these RE-V compounds are semimetals with electron pockets at the $X$ point and hole pockets at $Γ$. Whereas in DFT-GGA the carrier density is significantly overestimated, the computed carrier densities using HSE06 is in good agreement with the available experimental data. △ Less

Submitted 14 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 101, 125105 (2020)

Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

Authors: Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar, Aranya Goswami, Felipe Crasto de Lima, Abhishek Sharan, Fernando P. Sabino, Tobias L. Brown-Heft, Yu-Hao Chang, Alexei V. Fedorov, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation i… ▽ More Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemssion spectroscopy, and hybrid density functional theory we have unveiled the bandstructure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up new possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis. △ Less

Submitted 25 March, 2019; v1 submitted 31 January, 2019; originally announced February 2019.

Comments: 20 pages, 12 figures; includes supplementary information

Journal ref: Phys. Rev. B 99, 125134 (2019)

Electronic and structural transition in $La_{0.2} Sr_{0.8} Mn O_3$

Authors: R. Bindu, Kalobaran Maiti, R. Rawat, S. Khalid

Abstract: We investigate the interplay of the electronic and structural transition in La$_{0.2}$Sr$_{0.8}$MnO$_{3}$. The transport and specific heat measurements exhibit unusual evolutions and signature of a first order phase transition around 265 K. Mn K-edge extended $x$-ray absorption fine structure results reveal distortion in the MnO$_6$ octahedra even in the cubic phase and a remarkable evolution of… ▽ More We investigate the interplay of the electronic and structural transition in La$_{0.2}$Sr$_{0.8}$MnO$_{3}$. The transport and specific heat measurements exhibit unusual evolutions and signature of a first order phase transition around 265 K. Mn K-edge extended $x$-ray absorption fine structure results reveal distortion in the MnO$_6$ octahedra even in the cubic phase and a remarkable evolution of the distortion across the phase transition. These results manifest the importance of fluctuations in Mn 3$d$ orbital occupancy and disorder in their electronic properties, which may help in understanding the orbital and spin ordering proposed in these systems. △ Less

Submitted 17 December, 2007; originally announced December 2007.

Comments: 3 pages, 3 figures

A study of transition metal K-edge x-ray absorption spectra of LaBO3 (B=Mn, Fe, Co, Ni), La2CuO4 and SrMnO3 using partial density of states

Authors: S. K. Pandey, S. Khalid, A. V. Pimpale

Abstract: The transition metal K-edge x-ray absorption near edge structure (XANES) studies have been carried on LaBO3 (B=Mn, Fe, Co, Ni), La2CuO4 and SrMnO3 compounds. The theoretical spectra have been calculated using transition metal (TM) 4p density of states (DOS) obtained from full-potential LMTO density functional theory. The exchange-correlation functional used in this calculation is taken under loc… ▽ More The transition metal K-edge x-ray absorption near edge structure (XANES) studies have been carried on LaBO3 (B=Mn, Fe, Co, Ni), La2CuO4 and SrMnO3 compounds. The theoretical spectra have been calculated using transition metal (TM) 4p density of states (DOS) obtained from full-potential LMTO density functional theory. The exchange-correlation functional used in this calculation is taken under local density approximation (LDA). The comparison of experimental spectra with the calculated ones indicates that single-particle transitions under LDA are sufficient to generate all the observed XANES including those which have earlier been attributed to many-body shake-up transitions and core-hole potentials. The present study reveals that all the experimentally observed features are mainly due to distribution in TM 4p DOS influenced by hybridization with other orbitals. Specifically, for LaMnO3, the feature earlier attributed to shake-up process is seen to arise from hybridization of Mn 4p with La 6p and O 2p orbitals; in La2CuO4 the features attributed to core hole potential correspond to hybridization of Cu 4p with La 6p, La 5d and O 2p orbitals. To see the effect of inhomogeneous electronic charge distribution and on-site Coulomb and exchange interaction (U) on the XANES of these compounds generalized-gradient approximation and U corrections are incorporated in the calculations. These corrections do not generate any new features in the spectra but affect the detailed intensity and positions of some of the features. △ Less

Submitted 10 December, 2006; originally announced December 2006.

Comments: 23 pages, 8 figures. To appear in J. Phys.: Condens. Matter

Journal ref: J. Phys.: Condens. Matter 19, 036212 (2007)

Local distortion in LaCoO3 and PrCoO3: EXAFS, XRD and XANES studies

Authors: S. K. Pandey, S. Khalid, N. P. Lalla, A. V. Pimpale

Abstract: Room temperature Co K-edge extended x-ray absorption fine structure (EXAFS), x-ray absorption near edge structure (XANES) including pre-edge and x-ray diffraction (XRD) studies are carried out on LaCoO3 and PrCoO3. The Co-O, Co-La/Pr and Co-Co bond lengths are obtained from EXAFS analysis and compared with those obtained from XRD. The EXAFS analysis of data indicates that CoO6 octahedron is dist… ▽ More Room temperature Co K-edge extended x-ray absorption fine structure (EXAFS), x-ray absorption near edge structure (XANES) including pre-edge and x-ray diffraction (XRD) studies are carried out on LaCoO3 and PrCoO3. The Co-O, Co-La/Pr and Co-Co bond lengths are obtained from EXAFS analysis and compared with those obtained from XRD. The EXAFS analysis of data indicates that CoO6 octahedron is distorted in both LaCoO3 and PrCoO3. Such distortion is expected in orthorhombic PrCoO3 but not in rhombohedral LaCoO3. This distortion in CoO6 octahedron is attributed to Jahn-Teller active Co3+ ion in intermediate spin state in these compounds. Higher shell studies reveal that Debye-Waller (DW) factors of Co-Pr and Co-Co bonds in PrCoO3 are more in comparison to Co-La and Co-Co bonds in LaCoO3 indicating that these bonds are structurally more disordered in PrCoO3. The comparison of Co-Co bond lengths and corresponding DW factors indicates that the structural disorder plays an important role in deciding the insulating properties of these compounds. XANES studies have shown changes in the intensities and positions of different near edge features. △ Less

Submitted 24 October, 2006; originally announced October 2006.

Comments: 22 pages, 8 figures, 2 tables. To appear in J. Phys.: Condens. Matter

Journal ref: 2006 J. Phys.: Condens. Matter 18 10617

Electronic states of LaCoO$_3$: Co K-edge and La L-edge X-ray absorption studies

Authors: S. K. Pandey, Ashwani Kumar, S. Khalid, A. V. Pimpale

Abstract: Room temperature Co K- and La L-edges X-ray absorption studies have been carried out on LaCoO$_3$. Experimental near edge structures have been analysed by theoretical LDA+U density of states (DOS) and multiple scattering (MS) calculations. Use of both MS and DOS calculations yield additional information about hybridization of the states of central atom with neighbouring atoms responsible for pro… ▽ More Room temperature Co K- and La L-edges X-ray absorption studies have been carried out on LaCoO$_3$. Experimental near edge structures have been analysed by theoretical LDA+U density of states (DOS) and multiple scattering (MS) calculations. Use of both MS and DOS calculations yield additional information about hybridization of the states of central atom with neighbouring atoms responsible for producing the near edge structures. Absorption processes at Co K-, La L1-, L2-, and L3-edges have been attributed to electronic transitions from Co 1s to Co 4p, La 2s to La 6p, La 2p$_{1/2}$ to La 5d, and La 2p$_{3/2}$ to La 5d, respectively. All the pre-edge and post-edge features including the shape of the main absorption edge have been generated by taking the convolution of the calculated DOS, indicating that single particle approximation is sufficient to express all experimentally observed major structures. Two pre-edge structures observed in Co K-edge spectrum are attributed to Co 1s to e$_g^{\uparrow}$ and e$_g^$\downarrow}$ quadrupole transitions in contrast to earlier identification of the same to Co 1s to t$_{2g}$ and e$_g$ transitions. The influence of La 6p states on the Co 4p states is such that the inclusion of La atoms in the MS calculations is necessary to generate post-edge structures in Co K-edge spectrum. The importance of the hybridization of O 2p state with La 6p and 5d in the L-edge absorption processes has also been discussed. 10% contribution of quadrupole channel has been estimated in La L-edges. △ Less

Submitted 6 July, 2006; originally announced July 2006.

Comments: 13 Pages; 6 figures; Accepted in J. Phys.: Condens. Matter

Journal ref: J. Phys.: Condens. Matter 18, 7103 (2006)

Do** and bond length contributions to Mn K-edge shift in La$_{1-x}$Sr$_x$MnO$_{3}$ and their correlation with electrical transport properties

Authors: S. K. Pandey, R. Bindu, Ashwani Kumar, S. Khalid, A. V. Pimpale

Abstract: The experimental Mn K-edge x-ray absorption spectra of La$_{1-x}$Sr$_x$MnO$_{3}$, $x$ = 0 - 0.7 are compared with the band structure calculations using spin polarized density functional theory. It is explicitly shown that there is a correspondence between the inflection point on the absorption edge and the centre of gravity of the unoccupied Mn 4$p$-band. This correspondence has been used to sep… ▽ More The experimental Mn K-edge x-ray absorption spectra of La$_{1-x}$Sr$_x$MnO$_{3}$, $x$ = 0 - 0.7 are compared with the band structure calculations using spin polarized density functional theory. It is explicitly shown that there is a correspondence between the inflection point on the absorption edge and the centre of gravity of the unoccupied Mn 4$p$-band. This correspondence has been used to separate the do** and size contributions to edge shift due to variation in number of electrons in valence band and Mn-O bond lengths, respectively when Sr is doped into LaMnO$_3$. Such separation is helpful to find the localization behaviour of charge carriers and to understand the observed transport properties of these compounds. △ Less

Submitted 3 September, 2007; v1 submitted 19 March, 2006; originally announced March 2006.

Comments: 5 pages, 3 figures; minor changes in the text and figures;

Local distortion of MnO$_6$ octahedron in La$_{1-x}$Sr$_x$MnO$_{3+δ}$ (x = 0.1 to 0.9): an EXAFS study

Authors: R. Bindu, S. K. Pandey, Ashwani Kumar, S. Khalid, A. V. Pimpale

Abstract: Room temperature Mn K-edge extended x-ray absorption fine structure (EXAFS) studies were carried out on La$_{1-x}$Sr$_x$MnO$_{3+δ}$ (x = 0.1 to 0.9) compounds. It is found from the detailed EXAFS analysis that the local structure around Mn sites is different from the global structure inferred from x-ray diffraction, especially for x <= 0.4, indicating presence of local distortions in MnO$_6$ oct… ▽ More Room temperature Mn K-edge extended x-ray absorption fine structure (EXAFS) studies were carried out on La$_{1-x}$Sr$_x$MnO$_{3+δ}$ (x = 0.1 to 0.9) compounds. It is found from the detailed EXAFS analysis that the local structure around Mn sites is different from the global structure inferred from x-ray diffraction, especially for x <= 0.4, indicating presence of local distortions in MnO$_6$ octahedra. For the rhombohedral compounds, x = 0.1 to 0.3 the distortion is maximum for x = 0.1 and two bond lengths are seen- short one in basal plane and long one in apical plane. For compounds with x = 0.4 to 0.8 two short bonds in basal plane and four long bonds- two in the basal plane and remaining two in the apical plane are seen. For the compounds up to x = 0.3 compositions long bond length decreases and short bond length increases with increase in x whereas for the compounds 0.4 <= x <= 0.8 both types of bond lengths decrease. Such behaviour of bond lengths is an indication of the changed nature of distortion from Jahn-Teller type to breathing type at x = 0.4 composition. △ Less

Submitted 6 January, 2006; originally announced January 2006.

Comments: 16 pages, 1 table, 8 figures

Journal ref: J. Phys: condens. Matter 17, (2005) 6393