Showing 1–50 of 96 results for author: Kawakami, R

Large spin-orbit torque in a-plane $α$-Fe$_{2}$O$_{3}$/Pt bilayers

Authors: Igor Lyalin, Hantao Zhang, Justin Michel, Daniel Russell, Fengyuan Yang, Ran Cheng, Roland K. Kawakami

Abstract: Realization of efficient spin-orbit torque switching of the Néel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet/heavy metal heterostructures is an important first step towards this goal. Here, we employ magneto-optic techniques to study dam**-like spin-orbit torque (DL-SOT) in a-plane $α$-Fe$_2$O… ▽ More Realization of efficient spin-orbit torque switching of the Néel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet/heavy metal heterostructures is an important first step towards this goal. Here, we employ magneto-optic techniques to study dam**-like spin-orbit torque (DL-SOT) in a-plane $α$-Fe$_2$O$_3$ (hematite) with a Pt spin-orbit overlayer. We find that the DL-SOT efficiency is two orders of magnitude larger than reported in c- and r-plane hematite/Pt using harmonic Hall techniques. The large magnitude of DL-SOT is supported by direct imaging of current-induced motion of antiferromagnetic domains that happens at moderate current densities. Our study introduces a new method for quantifying spin-orbit torque in antiferromagnets with a small canted moment and identifies a-plane $α$-Fe$_2$O$_3$ as a promising candidate to realize efficient SOT switching. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Comments: 6 pages, 3 figures

Interface transparency to orbital current

Authors: Igor Lyalin, Roland K. Kawakami

Abstract: The transport of spin currents across interfaces is relatively well studied, while the transport properties of orbital currents are just starting to be examined. In Cr/Ni bilayers, the spin-orbit torque (SOT) due to the orbital current generated in the Cr layer is believed to dominate over torques of other origins. In this work, we study SOT in Cr/X/Ni trilayers, where X is an ultra-thin spacer of… ▽ More The transport of spin currents across interfaces is relatively well studied, while the transport properties of orbital currents are just starting to be examined. In Cr/Ni bilayers, the spin-orbit torque (SOT) due to the orbital current generated in the Cr layer is believed to dominate over torques of other origins. In this work, we study SOT in Cr/X/Ni trilayers, where X is an ultra-thin spacer of a different material. Using the SOT as a proxy for the orbital current transferred from the Cr to the Ni layer, we compare Cr/X/Ni results to Pt/X/Ni, the system in which spin current generated in the Pt layer plays a dominant role. We find that across 12 different spacers the apparent interface transparency to the orbital current is comparable or larger than to the spin current. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Antiferromagnetic order in a layered magnetic topological insulator MnBi$_2$Se$_4$ probed by resonant soft x-ray scattering

Authors: Xiang Chen, Alejandro Ruiz, Alexander J. Bishop, Brandon Gunn, Rourav Basak, Tiancong Zhu, Yu He, Mayia Vranas, Eugen Weschke, Roland K. Kawakami, Robert J. Birgeneau, Alex Frano

Abstract: The quasi-two-dimensional magnetic topological insulator MnBi$_2$Se$_4$, stabilized via non-equilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers ($\sim$13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose mag… ▽ More The quasi-two-dimensional magnetic topological insulator MnBi$_2$Se$_4$, stabilized via non-equilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers ($\sim$13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose magnetic nature is validated by studying its temperature, energy, and polarization dependence. Through a detailed analysis, an A-type antiferromagetic order with in-plane moments is implied. This alternative spin structure in MnBi$_2$Se$_4$, in contrast to the Ising antiferromagnetic states in other magnetic topological insulators, might be relevant for hosting new topological states. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Do**

Authors: Ryan A. Nelson, Jesaiah King, Shuyu Cheng, Archibald J. Williams, Christopher Jozwiak, Aaron Bostwick, Eli Rotenberg, Souvik Sasmal, I-Hsuan Kao, Aalok Tiwari, Natalie R. Jones, Chuting Cai, Emma Martin, Andrei Dolocan, Li Shi, Roland Kawakami, Joseph P. Heremans, Jyoti Katoch, Joshua E. Goldberger

Abstract: EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve this debate, we established the growth of n-type EuCd_{2}As_{2} crystals, to directly visualize the nature of the conduction band using angle resolve photoemission… ▽ More EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve this debate, we established the growth of n-type EuCd_{2}As_{2} crystals, to directly visualize the nature of the conduction band using angle resolve photoemission spectroscopy (ARPES). We show that La-do** leads to n-type transport signatures in both the thermopower and Hall effect measurements, in crystals with do** levels at 2 - 6 x 10^{17} e^{-} cm^{-3}. Both p-type and n-type doped samples exhibit antiferromagnetic ordering at 9 K. ARPES experiments at 6 K clearly show the presence of the conduction band minimum at 0.8 eV above the valence band maximum, which is further corroborated by the observation of a 0.71 - 0.72 eV band gap in room temperature diffuse reflectance absorbance measurements. Together these findings unambiguously show that EuCd_{2}As_{2} is indeed a semiconductor with a substantial band gap and not a topological semimetal. △ Less

Submitted 4 March, 2024; originally announced March 2024.

Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn$_6$Sn$_6$ (R = Er, Tb) Thin Films

Authors: Shuyu Cheng, Igor Lyalin, Wenyi Zhou, Roland K. Kawakami

Abstract: Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for r… ▽ More Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for realizing the high-temperature quantum anomalous Hall effect. The growth of RMn$_6$Sn$_6$ thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn$_6$Sn$_6$ have focused on bulk crystals so far, and the synthesis of RMn$_6$Sn$_6$ thin films has not been reported so far. Here we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn$_6$Sn$_6$ and TbMn$_6$Sn$_6$ thin films. It is especially noteworthy that TbMn$_6$Sn$_6$ thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum anomalous Hall effect. Our work paves the avenue toward the control of the AHE using devices patterned from RMn$_6$Sn$_6$ thin films. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Comments: 7 pages, 4 figures

Journal ref: APL Mater. 12, 041129 (2024)

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Authors: Yuxin Zhang, Haidong Tian, Huaixuan Li, Chiho Yoon, Ryan A. Nelson, Ziling Li, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Roland Kawakami, Joshua E. Goldberger, Fan Zhang, Chun Ning Lau

Abstract: Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compa… ▽ More Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350μA/μm, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Comments: 4 figures, In review

Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth

Authors: Wenyi Zhou, Alexander J. Bishop, Xiyue S. Zhang, Katherine Robinson, Igor Lyalin, Ziling Li, Ryan Bailey-Crandell, Thow Min Jerald Cham, Shuyu Cheng, Yunqiu Kelly Luo, Daniel C. Ralph, David A. Muller, Roland K. Kawakami

Abstract: Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th… ▽ More Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for develo** various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties. △ Less

Submitted 25 August, 2023; originally announced August 2023.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. Materials 7, 104004 (2023)

Magnon Diffusion Length and Longitudinal Spin Seebeck Effect in Vanadium Tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$)

Authors: Seth W. Kurfman, Denis R. Candido, Brandi Wooten, Yuanhua Zheng, Michael J. Newburger, Shuyu Cheng, Roland K. Kawakami, Joseph P. Heremans, Michael E. Flatté, Ezekiel Johnston-Halperin

Abstract: Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studi… ▽ More Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studied systems that do not encompass the full phase space of phenomenology predicted by fundamental theory. Here we present an important advance in this coupled theory-experiment challenge, wherein we extend existing theories of the spin Seebeck effect (SSE) to explicitly include the temperature-dependence of magnon non-conserving processes. This expanded theory quantitatively describes the low-temperature behavior of SSE signals previously measured in the mainstay material yttrium iron garnet (YIG) and predicts a new regime for magnonic and spintronic materials that have low saturation magnetization, $M_S$, and ultra-low dam**. Finally, we validate this prediction by directly observing the spin Seebeck resistance (SSR) in the molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$). These results validate the expanded theory, yielding SSR signals comparable in magnitude to YIG and extracted magnon diffusion length ($λ_m>1$ $μ$ m) and magnon lifetime for V[TCNE]$_x$ ($τ_{th}\approx 1-10$ $μ$ s) exceeding YIG ($τ_{th}\sim 10$ ns). Surprisingly, these properties persist to room temperature despite relatively low spin wave stiffness (exchange). This identification of a new regime for highly efficient SSE-active materials opens the door to a new class of magnetic materials for spintronic and magnonic applications. △ Less

Submitted 18 August, 2023; originally announced August 2023.

Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands

Authors: Shuyu Cheng, M. Nrisimhamurty, Tong Zhou, Nuria Bagues, Wenyi Zhou, Alexander J. Bishop, Igor Lyalin, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, David W. McComb, Igor Zutic, Roland K. Kawakami

Abstract: Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi l… ▽ More Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials. △ Less

Submitted 28 July, 2023; originally announced July 2023.

Comments: 30 pages, 12 figures

Journal ref: Nano Lett. 23, 7107-7113 (2023)

Magneto-Optical Detection of the Orbital Hall Effect in Chromium

Authors: Igor Lyalin, Sanaz Alikhah, Marco Berritta, Peter M. Oppeneer, Roland K. Kawakami

Abstract: The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3$d$ transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Com… ▽ More The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3$d$ transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Comparing the thickness-dependent magneto-optical measurements with $\textit{ab initio}$ calculations, we estimate an orbital diffusion length in Cr of $6.6\pm 0.6$ nm. △ Less

Submitted 18 June, 2023; originally announced June 2023.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Lett. 131, 156702 (2023)

Observation of Skyrmion Bubbles in Multilayer [Pt/Co/Cu]n using spin-polarized STM

Authors: Jacob J. Repicky, Brad Goff, Shuyu Cheng, Roland K. Kawakami, Jay A. Gupta

Abstract: Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between… ▽ More Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between surface structure and skyrmion morphology with nanoscale spatial resolution. Irregular-shaped skyrmion bubbles were observed, with effective diameters from 20-200 nm that are much larger than the nanoscale grain structure of the surface topography. Nucleation, annihilation, and motion of skyrmion bubbles could be driven using the stray field of the ferromagnetic tip in repeated imaging, and spin-polarized current/voltage pulses. Our detailed comparison of STM topography and differential conductance images shows that there are no surface defects or inhomogeneities at length scales that could account for the range in skyrmion bubble size or shape observed in the measurements. △ Less

Submitted 1 June, 2023; v1 submitted 17 March, 2023; originally announced March 2023.

Comments: 11 pages, 5 figures

Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3

Authors: Brad M. Goff, Alexander J. Bishop, Wenyi Zhou, Ryan Bailey-Crandell, Katherine Robinson, Roland K. Kawakami, Jay A. Gupta

Abstract: Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and out… ▽ More Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 390 +- 10 pm for FGT and 430 +- 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 +- 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignments. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a (sqrt3 x sqrt3)R30 reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism (MCD) measurements confirm these thin FGT films are ferromagnetic with TC ~190 K. △ Less

Submitted 20 November, 2023; v1 submitted 17 March, 2023; originally announced March 2023.

Comments: 12 pages, 5 figures

An Atomically Tailored Chiral Magnet with Small Skyrmions at Room Temperature

Authors: Tao Liu, Camelia M. Selcu, Binbin Wang, Núria Bagués, Po-Kuan Wu, Timothy Q. Hartnett, Shuyu Cheng, Denis Pelekhov, Roland A. Bennett, Joseph Perry Corbett, Jacob R. Repicky, Brendan McCullian, P. Chris Hammel, Jay A. Gupta, Mohit Randeria, Prasanna V. Balachandran, David W. McComb, Roland K. Kawakami

Abstract: Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet… ▽ More Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet both these goals by develo** epitaxial FeGe films with excess Fe using atomic layer molecular beam epitaxy (MBE) far from thermal equilibrium. Our novel atomic layer design permits the incorporation of 20% excess Fe while maintaining a non-centrosymmetric crystal structure supported by theoretical calculations and necessary for stabilizing skyrmions. We show that the Curie temperature is well above room temperature, and that the skyrmions probed by topological Hall effect have sizes down to 15 nm as imaged by Lorentz transmission electron microscopy (LTEM) and magnetic force microscopy (MFM). Our results illustrate new avenues for creating artificial materials tailored at the atomic scale that can impact nanotechnology. △ Less

Submitted 9 March, 2023; originally announced March 2023.

Comments: 22 figures, 34 pages

Journal ref: Commun Phys 6, 327 (2023)

Room-Temperature Magnetic Skyrmions in Pt/Co/Cu Multilayers

Authors: Shuyu Cheng, Núria Bagués, Camelia M. Selcu, Jacob B. Freyermuth, Ziling Li, Binbin Wang, Shekhar Das, P. Chris Hammel, Mohit Randeria, David W. McComb, Roland K. Kawakami

Abstract: Magnetic skyrmions are promising for next-generation information storage and processing owing to their potential advantages in data storage density, robustness, and energy efficiency. The magnetic multilayers consisting of Pt, Co, and a third metal element $X$ provide an ideal platform to study the skyrmions due to their highly tunable magnetic properties. Here, we report the observation of room-t… ▽ More Magnetic skyrmions are promising for next-generation information storage and processing owing to their potential advantages in data storage density, robustness, and energy efficiency. The magnetic multilayers consisting of Pt, Co, and a third metal element $X$ provide an ideal platform to study the skyrmions due to their highly tunable magnetic properties. Here, we report the observation of room-temperature bubble-like Néel skyrmions in epitaxial Pt/Co/Cu multilayers in samples with multidomain states in zero field. The magneto-optic Kerr effect (MOKE) and superconducting quantum interference device (SQUID) magnetometry are applied to investigate the shapes of the hysteresis loops, the magnetic anisotropy, and the saturation magnetization. By tuning the Co thickness and the number of periods, we achieve perpendicular and in-plane magnetized states and multidomain states that are identified by a wasp-waisted hysteresis loop. Skyrmions are directly imaged by magnetic force microscopy (MFM) and Lorentz transmission electron microscopy (LTEM). The development of room-temperature skyrmions in Pt/Co/Cu multilayers may lead to advances in skyrmion-related research and applications. △ Less

Submitted 28 August, 2023; v1 submitted 3 March, 2023; originally announced March 2023.

Comments: 11 pages, 6 Figures

Journal ref: Phys. Rev. B 108, 174433 (2023)

Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures

Authors: Shuyu Cheng, Igor Lyalin, Alexander J. Bishop, Roland K. Kawakami, Binbin Wang, Núria Bagués, David W. McComb

Abstract: Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe… ▽ More Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials. △ Less

Submitted 15 March, 2022; originally announced March 2022.

Comments: 8 pages, 5 figures. arXiv admin note: substantial text overlap with arXiv:2105.12203

Journal ref: APL Materials 10, 061112 (2022)

Momentum-Resolved Exciton Coupling and Valley Polarization Dynamics in Monolayer WS$_2$

Authors: Alice Kunin, Sergey Chernov, ** Bakalis, Ziling Li, Shuyu Cheng, Zachary H. Withers, Michael G. White, Gerd Schönhense, Xu Du, Roland K. Kawakami, Thomas K. Allison

Abstract: Coupling between exciton states across the Brillouin zone in monolayer transition metal dichalcogenides can lead to ultrafast valley depolarization. Using time- and angle-resolved photoemission, we present momentum- and energy-resolved measurements of exciton coupling in monolayer WS$_2$. By comparing full 4D ($k_x, k_y, E, t$) data sets after both linearly and circularly polarized excitation, we… ▽ More Coupling between exciton states across the Brillouin zone in monolayer transition metal dichalcogenides can lead to ultrafast valley depolarization. Using time- and angle-resolved photoemission, we present momentum- and energy-resolved measurements of exciton coupling in monolayer WS$_2$. By comparing full 4D ($k_x, k_y, E, t$) data sets after both linearly and circularly polarized excitation, we are able to disentangle intervalley and intravalley exciton coupling dynamics. Recording in the exciton binding energy basis instead of excitation energy, we observe strong mixing between the B$_{1s}$ exciton and A$_{n>1}$ states. The photoelectron energy and momentum distributions observed from excitons populated via intervalley coupling (e.g. K$^-$ $\rightarrow$ K$^+$) indicate that the dominant valley depolarization mechanism conserves the exciton binding energy and center-of-mass momentum, consistent with intervalley Coulomb exchange. On longer timescales, exciton relaxation is accompanied by contraction of the momentum space distribution. △ Less

Submitted 4 March, 2022; originally announced March 2022.

Comments: 16 pages: 8 pages main text with 5 figures, 8 pages SI with 6 figures

Journal ref: Phys. Rev. Lett. 130, 046202 (2023)

Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films

Authors: Wenyi Zhou, Alexander J. Bishop, Menglin Zhu, Igor Lyalin, Robert C. Walko, Jay A. Gupta, **woo Hwang, Roland K. Kawakami

Abstract: We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning… ▽ More We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy. △ Less

Submitted 8 February, 2022; originally announced February 2022.

Comments: 18 pages, 4 figures

Journal ref: ACS Appl. Electron. Mater. 4, 3190 (2022)

Van der Waals heterostructures for spintronics and opto-spintronics

Authors: Juan F. Sierra, Jaroslav Fabian, Roland K. Kawakami, Stephan Roche, Sergio O. Valenzuela

Abstract: The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities… ▽ More The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here, we overview recent progress on 2D spintronics and opto-spintronics using vdW heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multi-functional hybrid heterostructures based on vdW materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultra-compact all-2D spin devices and their potential applications in conventional and quantum technologies. △ Less

Submitted 19 October, 2021; originally announced October 2021.

Comments: Review article. 39 pages, 5 figures, 2 tables. Full-text access at the SharedIt link https://rdcu.be/cpbSv

Journal ref: Nat. Nanotechnol.16, 856 (2021)

Epitaxial Growth and Domain Structure Imaging of Kagome Magnet Fe$_3$Sn$_2$

Authors: Shuyu Cheng, Igor Lyalin, Alexander J. Bishop, Roland K. Kawakami

Abstract: Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer mole… ▽ More Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer molecular beam epitaxy. Structural and magnetic characterization of Fe$_3$Sn$_2$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe$_3$Sn$_2$ with other materials. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Comments: 6 pages, 5 figures

Atomic scale visualization of topological spin textures in the chiral magnet MnGe

Authors: Jacob Repicky, Po-Kuan Wu, Tao Liu, Joseph Corbett, Tiancong Zhu, Adam Ahmed, N. Takeuchi, J. Guerrero-Sanchez, Mohit Randeria, Roland Kawakami, Jay A. Gupta

Abstract: Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and to correlate the magnetism with structure probed at the atomic-scale. Our images indicate helical stripe domains, each characterized by a single wavevector Q, and their associated helimagnetic domain walls, in contrast to the 3Q magnetic state seen in the bulk. Combining… ▽ More Spin polarized scanning tunneling microscopy is used to directly image topological magnetic textures in thin films of MnGe, and to correlate the magnetism with structure probed at the atomic-scale. Our images indicate helical stripe domains, each characterized by a single wavevector Q, and their associated helimagnetic domain walls, in contrast to the 3Q magnetic state seen in the bulk. Combining our surface measurements with micromagnetic modeling, we deduce the three-dimensional orientation of the helical wavevectors and gain detailed understanding of the structure of individual domain walls and their intersections. We find that three helical domains meet in two distinct ways to produce either a "target-like" or a "pi-like" topological spin texture, and correlate these with local strain on the surface. We further show that the target-like texture can be reversibly manipulated through either current/voltage pulsing or applied magnetic field, a promising step toward future applications. △ Less

Submitted 3 August, 2020; originally announced August 2020.

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Authors: Brenton A. Noesges, Tiancong Zhu, Jacob J. Repicky, Sisheng Yu, Fenguan Yang, Jay A. Gupta, Roland K. Kawakami, Leonard J. Brillson

Abstract: Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic chang… ▽ More Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally. △ Less

Submitted 12 April, 2020; originally announced April 2020.

Comments: 12 pages, 6 figures + 1 supplemental figure

Journal ref: Phys. Rev. Materials 4, 054001 (2020)

Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy

Authors: Tiancong Zhu, Dante J. O'Hara, Brenton A. Noesges, Menglin Zhu, Jacob J. Repicky, Mark R. Brenner, Leonard J. Brillson, **woo Hwang, Jay A. Gupta, Roland K. Kawakami

Abstract: We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc… ▽ More We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective cap** layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. Materials 4, 084002 (2020)

Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$

Authors: Tiancong Zhu, Alexander J. Bishop, Tong Zhou, Menglin Zhu, Dante J. O'Hara, Alexander A. Baker, Shuyu Cheng, Robert C. Walko, Jacob J. Repicky, Jay A. Gupta, Chris M. Jozwiak, Eli Rotenberg, **woo Hwang, Igor Žutić, Roland K. Kawakami

Abstract: The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of… ▽ More The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators. △ Less

Submitted 17 March, 2020; originally announced March 2020.

Comments: 20 pages, 9 figures

Spin and Magnetism in 2D Materials

Authors: Roland K. Kawakami

Abstract: We review recent progress on spins and magnetism in 2D materials including graphene, transition metal dichalcogenides, and 2D magnets. We also discuss challenges and prospects for the future of spintronics with 2D van der Waals heterostructures. We review recent progress on spins and magnetism in 2D materials including graphene, transition metal dichalcogenides, and 2D magnets. We also discuss challenges and prospects for the future of spintronics with 2D van der Waals heterostructures. △ Less

Submitted 17 March, 2020; v1 submitted 3 November, 2019; originally announced November 2019.

Comments: 3 pages, 2 figures

Spectroscopic Evaluation of Charge-transfer Do** and Strain in Graphene/MoS2 Heterostructures

Authors: Rahul Rao, Ahmad E. Islam, Simranjeet Singh, Rajiv Berry, Roland K Kawakami, Benji Maruyama, Jyoti Katoch

Abstract: It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer do** across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructure… ▽ More It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer do** across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructures prepared by mechanical exfoliation and layer-by-layer transfer. By using correlation analysis between the Raman modes of graphene and MoS2 we show that both layers are subjected to compressive strain and charge transfer do** following mechanical exfoliation and thermal annealing. Furthermore, we show that both strain and carrier concentration can be modulated in the heterostructures with additional thermal annealing. Our study highlights the importance of considering both mechanical and electronic coupling when characterizing the interface in van der Waals heterostructures, and demonstrates a method to tune their electromechanical properties. △ Less

Submitted 10 May, 2019; v1 submitted 2 May, 2019; originally announced May 2019.

Comments: 5 Figures, 1 table

Journal ref: Phys. Rev. B 99, 195401, 2019

Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

Authors: Dillon Wong, Yang Wang, Wuwei **, Hsin-Zon Tsai, Aaron Bostwick, Eli Rotenberg, Roland K. Kawakami, Alex Zettl, Arash A. Mostofi, Johannes Lischner, Michael F. Crommie

Abstract: We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experim… ▽ More We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene. △ Less

Submitted 24 October, 2018; originally announced October 2018.

Comments: 5 figures

Journal ref: Phys. Rev. B 98, 155436 (2018)

Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene

Authors: Jyoti Katoch, Tiancong Zhu, Denis Kochan, Simranjeet Singh, Jaroslav Fabian, Roland K. Kawakami

Abstract: We report the experimental observation of sublattice-resolved resonant scattering in bilayer graphene by performing simultaneous cryogenic atomic hydrogen do** and electron transport measurements in ultrahigh vacuum. This allows us to monitor the hydrogen adsorption on the different sublattices of bilayer graphene without atomic-scale microscopy. Specifically, we detect two distinct resonant sca… ▽ More We report the experimental observation of sublattice-resolved resonant scattering in bilayer graphene by performing simultaneous cryogenic atomic hydrogen do** and electron transport measurements in ultrahigh vacuum. This allows us to monitor the hydrogen adsorption on the different sublattices of bilayer graphene without atomic-scale microscopy. Specifically, we detect two distinct resonant scattering peaks in the gate-dependent resistance, which evolve as a function of atomic hydrogen dosage. Theoretical calculations show that one of the peaks originates from resonant scattering by hydrogen adatoms on the α-sublattice (dimer site) while the other originates from hydrogen adatoms on the \b{eta}-sublattice (non-dimer site), thereby enabling a method for characterizing the relative sublattice occupancy via transport measurements. Utilizing this new capability, we investigate the adsorption and thermal desorption of hydrogen adatoms via controlled annealing and conclude that hydrogen adsorption on the \b{eta}-sublattice is energetically favored. Through site-selective desorption from the α-sublattice, we realize hydrogen do** with adatoms primarily on a single sublattice, which is highly desired for generating ferromagnetism. △ Less

Submitted 29 September, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Lett. 121, 136801 (2018)

Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride

Authors: Roland J. Koch, Jyoti Katoch, Simon Moser, Daniel Schwarz, Roland K. Kawakami, Aaron Bostwick, Eli Rotenberg, Chris Jozwiak, Søren Ulstrup

Abstract: Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes of hBN have been extensively studied using electron transport and optical probes, detailed experimental measurements of the energy- and momentum- dependent elect… ▽ More Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes of hBN have been extensively studied using electron transport and optical probes, detailed experimental measurements of the energy- and momentum- dependent electronic excitation spectrum are lacking. Here, we directly determine the full valence band (VB) electronic structure of micron-sized exfoliated flakes of hBN using angle-resolved photoemission spectroscopy with micrometer spatial resolution. We identify the π- and σ-band dispersions, the hBN stacking order and determine a total VB bandwidth of 19.4 eV. We compare these results with electronic structure data for epitaxial hBN on graphene on silicon carbide grown in situ using a borazine precursor. The epitaxial growth and electronic properties are investigated using photoe- mission electron microscopy. Our measurements show that the fundamental electronic properties of hBN are highly dependent on the fabrication strategy. △ Less

Submitted 30 July, 2018; originally announced July 2018.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. Materials 2, 074006 (2018)

Importance of Paramagnetic Background Subtraction for Determining the Magnetic Moment in Epitaxially Grown Monolayer and Few-Layer van der Waals Magnets

Authors: Dante J. O'Hara, Tiancong Zhu, Roland K. Kawakami

Abstract: Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the i… ▽ More Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the impact of the background subtraction method for accurately determining the magnetic moments in such systems. Using the recently reported intrinsic two-dimensional (2D) van der Waals ferromagnet MnSe${_2}$ as an example, we show that a normal diamagnetic background subtraction method in analyzing the bulk magnetometry measurement will result in an unexpectedly large magnetic moment (greater than ~10 μ${_B}$ per formula unit). Through our systematic growth study, we identify an additional paramagnetic signal due to unintentional Mn do** of the substrate. To extract the correct magnetic moment, a paramagnetic background should also be considered. This yields a total magnetic moment of ~4 μ${_B}$ per formula unit in monolayer MnSe${_2}$, which is in close agreement to the theoretically predicted value. △ Less

Submitted 3 July, 2018; originally announced July 2018.

Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy

Authors: J. P. Corbett, T. Zhu, A. S. Ahmed, S. J. Tjung, J. J. Repicky, T. Takeuchi, R. K. Kawakami, J. A. Gupta

Abstract: We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffra… ▽ More We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer. △ Less

Submitted 2 July, 2018; originally announced July 2018.

Comments: 19 pages, 7 figures

Probing Tunneling Spin Injection into Graphene via Bias Dependence

Authors: Tiancong Zhu, Simranjeet Singh, Jyoti Katoch, Hua Wen, Kirill Belashchenko, Igor Žutić, Roland K. Kawakami

Abstract: The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of th… ▽ More The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of the nonlocal spin signal for both MgO and hBN tunnel barriers. Furthermore, this signal reverses its sign at a negative DC bias for both kinds of tunnel barriers. The analysis of the bias dependence for injector electrodes with a wide range of contact resistances suggests that the sign reversal correlates with bias voltage rather than current. We consider different mechanisms for nonlinear bias dependence and conclude that the energy-dependent spin-polarized electronic structure of the ferromagnetic electrodes, rather than the electrical field-induced spin drift effect or spin filtering effect of the tunnel barrier, is the most likely explanation of the experimental observations. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 98, 054412 (2018)

Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene

Authors: **song Xu, Tiancong Zhu, Yunqiu Kelly Luo, Yuan-Ming Lu, Roland K. Kawakami

Abstract: We report the discovery of a strong and tunable spin lifetime anisotropy with excellent spin lifetimes up to 7.8 ns in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically-controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling. We utilize both the in-plane magnetic field Hanle precession and obl… ▽ More We report the discovery of a strong and tunable spin lifetime anisotropy with excellent spin lifetimes up to 7.8 ns in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically-controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling. We utilize both the in-plane magnetic field Hanle precession and oblique Hanle precession measurements to directly compare the lifetimes of out-of-plane vs. in-plane spins. We find that near the charge neutrality point, the application of a perpendicular electric field opens a band gap and generates an out-of-plane spin-orbit field that stabilizes out-of-plane spins against spin relaxation, leading to a large spin lifetime anisotropy. This intriguing behavior occurs because of the unique spin-valley coupled band structure of bilayer graphene. Our results demonstrate the potential for highly tunable spintronic devices based on dual-gated 2D materials. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Comments: 18 pages, 7 figures

Journal ref: Phys. Rev. Lett. 121, 127703 (2018)

Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy

Authors: Igor V. Pinchuk, Thaddeus J. Asel, Andrew Franson, Tiancong Zhu, Yuan-Ming Lu, Leonard J. Brillson, Ezekiel Johnston-Halperin, Jay A. Gupta, Roland K. Kawakami

Abstract: Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulatin… ▽ More Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulating Al2O3(0001) substrates and demonstrate electrical transport on films with 3.8 nm thickness (4 unit cells). The high material quality is confirmed through in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). In addition, these films are employed as seed layers for subsequent growth by codeposition, leading to atomic layer-by-layer growth as indicated by RHEED intensity oscillations. These material advances facilitate the pursuit of quantum phenomena in thin films of Dirac semimetals. △ Less

Submitted 23 May, 2018; v1 submitted 17 May, 2018; originally announced May 2018.

Comments: 11 pages, 5 figures

Journal ref: APL Materials 6, 086103 (2018)

Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures

Authors: Yu-Sheng Ou, N. J. Harmon, Patrick Odenthal, R. K. Kawakami, M. E. Flatté, E. Johnston-Halperin

Abstract: We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing u… ▽ More We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing us to simultaneously monitor both localized and itinerant states. For low magnetic fields (below 3 T) the beat frequency between these two excitations evolves linearly, indicating that the nuclear polarization is saturated almost immediately and that the hyperfine coupling to these two states is comparable, despite the 100x enhancement in nuclear polarization provided by the presence of the Fe layer. At higher magnetic fields (above 3 T) the Zeeman energy drives reentrant localization of the photocarriers. Subtracting the constant hyperfine contribution from both sets of data allows us to extract the Lande g-factor for each state and estimate their energy relative to the bottom of the conduction band, yielding -2.16 meV and 17 meV for localized and itinerant states, respectively. This work advances our fundamental understanding of spin-spin interactions between electron and nuclear spin species, as well as between localized and itinerant electronics states, and therefore has implications for future work in both spintronics and quantum information/computation. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Comments: 18 pages, 3 figures

Journal ref: Phys. Rev. B 98, 134444 (2018)

Spin absorption by in situ deposited nanoscale magnets on graphene spin valves

Authors: Walid Amamou, Gordon Stecklein, Steven J. Koester, Paul A. Crowell, Roland K. Kawakami

Abstract: An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using se… ▽ More An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using separate contacts for injection and detection, we isolate the effect of spin absorption from any change in the spin injection and detection mechanisms. As inferred from the thickness dependence, the effective spin current $j_e = \frac{2e}{\hbar} j_s$ absorbed by Fe is as large as $10^8$ A/m$^2$. The maximum value of $j_e$ is limited by the resistance-area product of the graphene/Fe interface, which is as small as 3 $Ωμ$m$^2$. The spin current absorbed by the same thickness of Cu is smaller than for Fe, as expected given the longer spin diffusion length and larger spin resistance of Cu compared to Fe. These results allow for a quantitative assessment of the prospects for achieving spin transfer torque switching of a nanomagnet using a graphene-based nonlocal spin valve. △ Less

Submitted 5 April, 2018; originally announced April 2018.

Comments: 20 pages, includes supplemental information

Journal ref: Phys. Rev. Applied 10, 044050 (2018)

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

Authors: Dante J. O'Hara, Tiancong Zhu, Amanda H. Trout, Adam S. Ahmed, Yunqiu, Luo, Choong Hee Lee, Mark R. Brenner, Siddharth Rajan, Jay A. Gupta, David W. McComb, Roland K. Kawakami

Abstract: Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structu… ▽ More Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $α$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $α$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $α$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Journal ref: D. J. O'Hara et al., Nano Letters 18, 3125 (2018)

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Authors: **song Xu, Simranjeet Singh, Jyoti Katoch, Guanzhong Wu, Tiancong Zhu, Igor Zutic, Roland K. Kawakami

Abstract: Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of gr… ▽ More Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene. The resulting tunable MPE employing a simple ferromagnetic metal holds promise for spintronic devices and to realize exotic topological states, from quantum spin Hall and quantum anomalous Hall effects, to Majorana fermions and skyrmions. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Journal ref: J. Xu et al., Nature Communications 9, 2869 (2018)

Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length

Authors: Tiancong Zhu, Roland K Kawakami

Abstract: The spin lifetime anisotropy is an important quantity for investigating the spin relaxation mechanisms in graphene and in heterostructures of two-dimensional materials. We generalize the diffusive spin transport equations of oblique spin precession in a lateral spin valve with finite contact resistance. This yields a method to determine the spin lifetime anisotropy ratio ξ=τ$_{\perp}$/τ… ▽ More The spin lifetime anisotropy is an important quantity for investigating the spin relaxation mechanisms in graphene and in heterostructures of two-dimensional materials. We generalize the diffusive spin transport equations of oblique spin precession in a lateral spin valve with finite contact resistance. This yields a method to determine the spin lifetime anisotropy ratio ξ=τ$_{\perp}$/τ$_{\parallel}$, which is the ratio between lifetimes of spin polarized perpendicular and parallel to the graphene surface. By solving the steady-state Bloch equations, we show that the line-shape of the oblique spin precession signal can be described with six dimensionless parameters, which can be solved analytically. We demonstrate that the anisotropic spin precession characteristics can be strongly suppressed by contact induced spin relaxation originating from conductance mismatch between the channel material and electrodes. To extract the spin lifetime anisotropy ratio accurately, we develop a closed form equation that includes the effect of finite contact resistance. Furthermore, we demonstrate that in the high contact resistance regime, the minimum channel length required for accurately determining the spin lifetime anisotropy for a sufficiently low external magnetic field is only determined by the diffusion coefficient of the channel material, as opposed to the spin diffusion length. Our work provides an accurate model to extract the spin lifetime anisotropy ratio from the oblique spin precession measurement, and can be used to guide the device design for such measurements. △ Less

Submitted 10 January, 2018; originally announced January 2018.

Comments: 27 pages, 5 figures

Journal ref: Phys. Rev. B 97, 144413 (2018)

NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase

Authors: Maxx Q. Arguilla, Jyoti Katoch, Kevin Krymowski, Nicholas D. Cultrara, **song Xu, Xiaoxiang Xi, Amanda Hanks, Shishi Jiang, Richard D. Ross, Roland J. Koch, Søren Ulstrup, Aaron Bostwick, Chris Jozwiak, Dave McComb, Eli Rotenberg, Jie Shan, Wolfgang Windl, Roland K. Kawakami, Joshua E. Goldberger

Abstract: The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1… ▽ More The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1 or 2 element, Tt = Group 14 tetrel element and Pn = Group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman active modes of the bulk crystals via polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn2As2 samples are resistant towards oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and transport on bulk and exfoliated samples, we show that NaSn2As2 is a highly conducting 2D semimetal, with resistivities on the order of 10-6 Ω m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Journal ref: ACS Nano, 2016

Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers

Authors: Walid Amamou, Igor V. Pinchuk, Amanda Hanks, Robert Williams, Nikolas Antolin, Adam Goad, Dante J. O'Hara, Adam S. Ahmed, Wolfgang Windl, David W. McComb, Roland K. Kawakami

Abstract: We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt v… ▽ More We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields. △ Less

Submitted 26 June, 2017; originally announced June 2017.

Comments: 16 pages, 6 figures

Journal ref: Phys. Rev. Materials 2, 011401 (2018)

Chiral Bobbers and Skyrmions in Epitaxial FeGe/Si(111) Films

Authors: Adam S. Ahmed, James Rowland, Bryan D. Esser, Sarah Dunsiger, David W. McComb, Mohit Randeria, Roland K. Kawakami

Abstract: We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse r… ▽ More We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse relationship between film thickness and the slope of the susceptibility (d\c{hi}/dH). We present evidence for the evolution as a function of film thickness, L, from a skyrmion phase for L < LD/2 to a cone phase with chiral bobbers at the interface for L > LD/2, where LD ~ 70 nm is the FeGe pitch length. We show using micromagnetic simulations that chiral bobbers, earlier predicted to be metastable, are in fact the stable ground state in the presence of an additional interfacial Rashba Dzyaloshinskii-Moriya interaction (DMI). △ Less

Submitted 14 April, 2018; v1 submitted 26 June, 2017; originally announced June 2017.

Comments: accepted to Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 2, 041401 (2018)

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Authors: Yunqiu, Luo, **song Xu, Tiancong Zhu, Guanzhong Wu, Elizabeth J. McCormick, Wenbo Zhan, Mahesh R. Neupane, Roland K. Kawakami

Abstract: Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room tempera… ▽ More Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface. We observe that the magnitude and direction of spin polarization is controlled by both helicity and photon energy. In addition, Hanle spin precession measurements confirm optical spin injection, spin transport, and electrical detection up to room temperature. Finally, analysis by a one-dimensional drift-diffusion model quantifies the optically injected spin current and the spin transport parameters. Our results demonstrate a 2D spintronic/valleytronic system that achieves optical spin injection and lateral spin transport at room temperature in a single device, which paves the way for multifunctional 2D spintronic devices for memory and logic applications. △ Less

Submitted 25 May, 2017; originally announced May 2017.

Comments: Nano Letters, in press

Journal ref: Nano Letters 17, 3877-3883 (2017)

Spatially resolving density-dependent screening around a single charged atom in graphene

Authors: Dillon Wong, Fabiano Corsetti, Yang Wang, Victor W. Brar, Hsin-Zon Tsai, Qiong Wu, Roland K. Kawakami, Alex Zettl, Arash A. Mostofi, Johannes Lischner, Michael F. Crommie

Abstract: Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated gr… ▽ More Electrons in two-dimensional graphene sheets behave as interacting chiral Dirac fermions and have unique screening properties due to their symmetry and reduced dimensionality. By using a combination of scanning tunneling spectroscopy (STM/STS) measurements and theoretical modeling we have characterized how graphene's massless charge carriers screen individual charged calcium atoms. A back-gated graphene device configuration has allowed us to directly visualize how the screening length for this system can be tuned with carrier density. Our results provide insight into electron-impurity and electron-electron interactions in a relativistic setting with important consequences for other graphene-based electronic devices. △ Less

Submitted 17 May, 2017; originally announced May 2017.

Comments: 4 figures

Journal ref: Phys. Rev. B 95, 205419 (2017)

Giant spin-splitting and gap renormalization driven by trions in single-layer WS$_2$/h-BN heterostructures

Authors: Jyoti Katoch, Søren Ulstrup, Roland J. Koch, Simon Moser, Kathleen M. McCreary, Simranjeet Singh, **song Xu, Berend T. Jonker, Roland K. Kawakami, Aaron Bostwick, Eli Rotenberg, Chris Jozwiak

Abstract: In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and lattice symmetry-induced spin and valley degrees of freedom. Combining single-layer (SL) TMDs with other 2D materials in van der Waals heterostructures offers a… ▽ More In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and lattice symmetry-induced spin and valley degrees of freedom. Combining single-layer (SL) TMDs with other 2D materials in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these many-body effects via engineered interlayer interactions. Here, we employ micro-focused angle-resolved photoemission spectroscopy (microARPES) and in-situ surface do** to manipulate the electronic structure of SL WS$_2$ on hexagonal boron nitride (WS$_2$/h-BN). Upon electron do**, we observe an unexpected giant renormalization of the SL WS$_2$ valence band (VB) spin-orbit splitting from 430~meV to 660~meV, together with a band gap reduction of at least 325~meV, attributed to the formation of trionic quasiparticles. These findings suggest that the electronic, spintronic and excitonic properties are widely tunable in 2D TMD/h-BN heterostructures, as these are intimately linked to the quasiparticle dynamics of the materials. △ Less

Submitted 31 January, 2018; v1 submitted 13 May, 2017; originally announced May 2017.

Comments: 14 pages, 4 figures. Address correspondence to [email protected] or [email protected]

Journal ref: Nature Physics, Advance Online Publication, 2018

Molecular Beam Epitaxy Growth of [CrGe/MnGe/FeGe] Superlattices: Toward Artificial B20 Skyrmion Materials with Tunable Interactions

Authors: Adam S. Ahmed, Bryan D. Esser, James Rowland, David W. McComb, Roland K. Kawakami

Abstract: Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically,… ▽ More Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(111) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, x-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental map** and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic. △ Less

Submitted 16 February, 2017; originally announced February 2017.

Comments: 16 pages, 7 figures

Journal ref: Journal of Crystal Growth 467, 38-46 (2017)

Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

Authors: Søren Ulstrup, Jyoti Katoch, Roland J. Koch, Daniel Schwarz, Simranjeet Singh, Kathleen M. McCreary, Hyang Keun Yoo, **song Xu, Berend T. Jonker, Roland K. Kawakami, Aaron Bostwick, Eli Rotenberg, Chris Jozwiak

Abstract: There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for e… ▽ More There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials. △ Less

Submitted 26 October, 2016; originally announced October 2016.

Comments: 28 pages, 5 figures

Journal ref: published in ACS Nano 2016

Strong modulation of spin currents in bilayer graphene by static and fluctuating proximity exchange fields

Authors: Simranjeet Singh, Jyoti Katoch, Tiancong Zhu, Keng-Yuan Meng, Tianyu Liu, Jack T. Brangham, Fengyuan Y. Yang, Michael Flatté, Roland K. Kawakami

Abstract: Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena, which can be further used for applications in next generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene/ferromagnetic-insulator (FMI) heter… ▽ More Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena, which can be further used for applications in next generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene/ferromagnetic-insulator (FMI) heterostructures. Here, we present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to FMI magnetization. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. Additionally, we discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization. △ Less

Submitted 30 March, 2017; v1 submitted 25 October, 2016; originally announced October 2016.

Journal ref: Phys. Rev. Lett. 118, 187201 (2017)

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2

Authors: Kathleen M. McCreary, Aubrey T. Hanbicki, Simranjeet Singh, Roland K. Kawakami, Glenn G. Jernigan, Masa Ishigami, Amy Ng, Todd H. Brintlinger, Rhonda M. Stroud, Berend T. Jonker

Abstract: We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). I… ▽ More We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties. △ Less

Submitted 21 October, 2016; originally announced October 2016.

Comments: final manuscript available at Scientific Reports

Journal ref: Scientific Reports 6, Article number: 35154 (2016)

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

Authors: Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara, Jared M. Johnson, John Jamison, Roberto C. Myers, Roland K. Kawakami, **woo Hwang, Siddharth Rajan

Abstract: Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with r… ▽ More Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with random in-plane orientation of domains was grown on sapphire and GaN substrates at a substrate temperature of 350-450 C with complete surface coverage and smooth surface morphology. Higher growth temperature (575 C) resulted in the formation of single-crystalline ε-GaSe triangular domains with six-fold symmetry confirmed by in-situ reflection high electron energy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-step growth method involving high temperature nucleation of single crystalline domains and low temperature growth to enhance coalescence was adopted to obtain continuous (002)-oriented GaSe with an epitaxial relationship with the substrate. While six-fold symmetry was maintained in the two step growth, β-GaSe phase was observed in addition to the dominant ε-GaSe in cross-sectional scanning transmission electron microscopy images. This work demonstrates the potential of growing high quality 2D-layered materials using molecular beam epitaxy and can be extended to the growth of other transition metal chalcogenides. △ Less

Submitted 19 October, 2016; originally announced October 2016.

Comments: Choong Hee Lee and Sriram Krishnamoorthy have contributed equally

Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

Authors: Simranjeet Singh, Jyoti Katoch, **song Xu, Cheng Tan, Tiancong Zhu, Walid Amamou, James Hone, Roland Kawakami

Abstract: We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here… ▽ More We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene. △ Less

Submitted 30 August, 2016; originally announced August 2016.

Comments: 22 pages, 4 figures and supplementary material, [accepted for publication in Applied Physics Letters]

Journal ref: Appl. Phys. Lett. 109, 122411 (2016)