Showing 1–12 of 12 results for author: Kauppinen, E I

One-dimensional van der Waals Heterostructures: Growth Mechanism and Handedness Correlation Revealed by Non-destructive TEM

Authors: Yongjia Zheng, Akihito Kumamoto, Kaoru Hisama, Keigo Otsuka, Grace Wickerson, Yuta Sato, Ming Liu, Taiki Inoue, Shohei Chiashi, Dai-Ming Tang, Qiang Zhang, Anton Anisimov, Esko I. Kauppinen, Yan Li, Kazu Suenaga, Yuichi Ikuhara, Shigeo Maruyamaa, Rong Xiang

Abstract: In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD) synthesized one-dimensional (1D) van der Waals heterostructures. Edge structures, nucleation sites, crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanot… ▽ More In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD) synthesized one-dimensional (1D) van der Waals heterostructures. Edge structures, nucleation sites, crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanotubes on a CVD-compatible Si/SiO2 TEM grid, which enabled a transfer-free and non-destructive access to many intrinsic structural details. In particular, we have distinguished different shaped boron nitride nanotube (BNNT) edges, which are confirmed, by electron diffraction at the same location, to be strictly associated with its own chiral angle and polarity. We also demonstrate the importance of surface cleanness and isolation for the formation of perfect 1D heterostructures. Furthermore, we elucidate the handedness correlation between SWCNT template and BNNT crystals. This work not only provides an in-depth understanding of this new 1D heterostructure material group, but also, in a more general perspective, serves as an interesting investigation on crystal growth on highly curved (radius of a couple of nm) atomic substrates. △ Less

Submitted 28 July, 2021; originally announced July 2021.

Intertube excitonic coupling in nanotube van der Waals heterostructures

Authors: M. G. Burdanova, M. Liu, M. Staniforth, Y. Zheng, R. Xiang, S. Chiashi, A. Anisimov, E. I. Kauppinen, S. Maruyama, J. Lloyd-Hughes

Abstract: Excitons dominate the optics of atomically-thin transition metal dichalcogenides and 2D van der Waals heterostructures. Interlayer 2D excitons, with an electron and a hole residing in different layers, form rapidly in heterostructures either via direct charge transfer or via Coulomb interactions that exchange energy between layers. Here, we report prominent intertube excitonic effects in quasi-1D… ▽ More Excitons dominate the optics of atomically-thin transition metal dichalcogenides and 2D van der Waals heterostructures. Interlayer 2D excitons, with an electron and a hole residing in different layers, form rapidly in heterostructures either via direct charge transfer or via Coulomb interactions that exchange energy between layers. Here, we report prominent intertube excitonic effects in quasi-1D van der Waals heterostructures consisting of C/BN/MoS$_2$ core/shell/skin nanotubes. Remarkably, under pulsed infrared excitation of excitons in the semiconducting CNTs we observed a rapid (sub-picosecond) excitonic response in the visible range from the MoS$_2$ skin, which we attribute to intertube biexcitons mediated by dipole-dipole Coulomb interactions in the coherent regime. On longer ($>100$ps) timescales hole transfer from the CNT core to the MoS$_2$ skin further modified the MoS$_2$'s absorption. Our direct demonstration of intertube excitonic interactions and charge transfer in 1D van der Waals heterostructures suggests future applications in infrared and visible optoelectronics using these radial heterojunctions. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Comments: 4 figures

Photoluminescence from Single-Walled MoS$_2$ Nanotubes Coaxially Grown on Boron Nitride Nanotubes

Authors: Ming Liu, Kaoru Hisama, Yongjia Zheng, Mina Maruyama, Seungju Seo, Anton Anisimov, Taiki Inoue, Esko I. Kauppinen, Susumu Okada, Shohei Chiashi, Rong Xiang, Shigeo Maruyama

Abstract: Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observ… ▽ More Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS$_2$ nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS$_2$ nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS$_2$ nanotubes, the PL signal is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS$_2$ nanotubes were examined through characterizations by PL, XPS, and Raman spectroscopy. Unlike the single-walled MoS$_2$ nanotubes, multi-walled MoS$_2$ nanotubes do not emit light. Single- and multi-walled MoS$_2$ nanotubes exhibit different Raman features in both resonant and non-resonant Raman spectra. The method of assembling heteronanotubes using BNNTs as templates provides an efficient approach for exploring the electronic and optical properties of other transition metal dichalcogenide nanotubes. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Gas-phase synthesis of carbon nanotube-graphene heterostructures

Authors: Saeed Ahmad, Hua Jiang, Kimmo Mustonen, Qiang Zhang, Aqeel Hussain, Abu Taher Khan, Nan Wei, Mohammad Tavakkoli, Yong** Liao, Er-Xiong Ding, Jani Kotakoski, Esko I. Kauppinen

Abstract: Graphene and carbon nanotubes (CNTs) share the same atomic structure of hexagonal carbon lattice. Yet, their synthesis differs in many aspects, including the shape and size of the catalyst. Here, we demonstrate a floating-catalyst chemical vapor deposition (FCCVD) technique for substrate-free, single-step growth of CNT-graphene heterostructures (CNT-G-H) using ethylene as a carbon source. The form… ▽ More Graphene and carbon nanotubes (CNTs) share the same atomic structure of hexagonal carbon lattice. Yet, their synthesis differs in many aspects, including the shape and size of the catalyst. Here, we demonstrate a floating-catalyst chemical vapor deposition (FCCVD) technique for substrate-free, single-step growth of CNT-graphene heterostructures (CNT-G-H) using ethylene as a carbon source. The formation of CNT-G-H is directly evidenced by lattice-resolved (scanning) transmission electron microscopy (STEM) and electron diffraction experiments, corroborated by atomic force microscopy (AFM). Our experiments show the relative number density of graphene-nanoflakes can be tuned by optimizing the synthesis conditions. Since in the applied process the formation of the structures take place in gas-suspension, the as-synthesized CNT-G-H films can be deposited on any surface in ambient temperature with an arbitrary thickness. Moreover, this process of CNT-G-H synthesis with strong universality has also been realized in multiple systems of ethylene-based FCCVD with various catalysts and set-ups. △ Less

Submitted 17 April, 2019; originally announced April 2019.

Electron-Beam Manipulation of Silicon Impurities in Single-Walled Carbon Nanotubes

Authors: Kimmo Mustonen, Alexander Markevich, Mukesh Tripathi, Heena Inani, Er-Xiong Ding, Aqeel Hussain, Clemens Mangler, Esko I. Kauppinen, Jani Kotakoski, Toma Susi

Abstract: The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical m… ▽ More The recent discovery that impurity atoms in crystals can be manipulated with focused electron irradiation has opened novel perspectives for top-down atomic engineering. These achievements have been enabled by advances in electron optics and microscope stability, but also in the preparation of suitable materials with impurity elements incorporated via ion and electron-beam irradiation or chemical means. Here it is shown that silicon heteroatoms introduced via plasma irradiation into the lattice of single-walled carbon nanotubes (SWCNTs) can be manipulated using a focused 55-60 keV electron probe aimed at neighboring carbon sites. Moving the silicon atom mainly along the longitudinal axis of large 2.7 nm diameter tubes, more than 90 controlled lattice jumps were recorded and the relevant displacement cross sections estimated. Molecular dynamics simulations show that even in 2 nm SWCNTs the threshold energies for out-of-plane dynamics are different than in graphene, and depend on the orientation of the silicon-carbon bond with respect to the electron beam as well as the local bonding of the displaced carbon atom and its neighbors. Atomic-level engineering of SWCNTs where the electron wave functions are more strictly confined than in two-dimensional materials may enable the fabrication of tunable electronic resonators and other devices. △ Less

Submitted 11 February, 2019; originally announced February 2019.

Comments: 15 pages, 4 figures

Si Substitution in Nanotubes and Graphene via Intermittent Vacancies

Authors: Heena Inani, Kimmo Mustonen, Alexander Markevich, Er-Xiong Ding, Mukesh Tripathi, Aqeel Hussain, Clemens Mangler, Esko I. Kauppinen, Toma Susi, Jani Kotakoski

Abstract: The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activat… ▽ More The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of $\sim$1 ion/nm$^{2}$, we find Si substitution densities of 0.15 nm$^{-2}$ in graphene and 0.05 nm$^{-2}$ in nanotubes, as revealed by atomically resolved scanning transmission electron microscopy. In good agreement with predictions of Ar irradiation effects in SWCNTs, we find Si incorporated in both mono- and divacancies, with $\sim$2/3 being of the first type. Controlled inclusion of impurities in the quasi-1D and 2D carbon lattices may prove useful for applications such as gas sensing, and a similar approach might also be used to substitute other elements with migration barriers lower than that of carbon. △ Less

Submitted 7 February, 2019; originally announced February 2019.

Comments: 5 Pages, 5 Figures, 1 Table

One-dimensional van der Waals heterostructures

Authors: Rong Xiang, Taiki Inoue, Yongjia Zheng, Akihito Kumamoto, Yang Qian, Yuta Sato, Ming Liu, Devashish Gokhale, Jia Guo, Kaoru Hisama, Satoshi Yotsumoto, Tatsuro Ogamoto, Hayato Arai, Yu Kobayashi, Hao Zhang, Bo Hou, Anton Anisimov, Yasumitsu Miyata, Susumu Okada, Shohei Chiashi, Yan Li, **g Kong, Esko I. Kauppinen, Yuichi Ikuhara, Kazu Suenaga , et al. (1 additional authors not shown)

Abstract: Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophis… ▽ More Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophisticated structures layer by layer. However, this concept has been so far limited in two dimensional (2D) materials. Here we show a class of new material where different layers are coaxially (instead of planarly) stacked. As the structure is in one dimensional (1D) form, we name it "1D vdW heterostructures". We demonstrate a 5 nm diameter nanotube consisting of three different materials: an inner conductive carbon nanotube (CNT), a middle insulating hexagonal boron nitride nanotube (BNNT) and an outside semiconducting MoS2 nanotube. As the technique is highly applicable to other materials in the current 2D libraries,4-6 we anticipate our strategy to be a starting point for discovering a class of new semiconducting nanotube materials. A plethora of function-designable 1D heterostructures will appear after the combination of CNTs, BNNTs and semiconducting nanotubes. △ Less

Submitted 30 October, 2018; v1 submitted 16 July, 2018; originally announced July 2018.

Journal ref: Science (2020), 367, 537

Uncovering the ultimate performance of single-walled carbon nanotube films as transparent conductors

Authors: Kimmo Mustonen, Patrik Laiho, Antti Kaskela, Toma Susi, Albert G. Nasibulin, Esko I. Kauppinen

Abstract: The ultimate performance - ratio of electrical conductivity to optical absorbance - of single- walled carbon nanotube (SWCNTs) transparent conductive films (TCFs) is an issue of considerable application relevance. Here, we present direct experimental evidence that SWCNT bundling is detrimental for their performance. We combine floating catalyst synthesis of non-bundled, high-quality SWCNTs with an… ▽ More The ultimate performance - ratio of electrical conductivity to optical absorbance - of single- walled carbon nanotube (SWCNTs) transparent conductive films (TCFs) is an issue of considerable application relevance. Here, we present direct experimental evidence that SWCNT bundling is detrimental for their performance. We combine floating catalyst synthesis of non-bundled, high-quality SWCNTs with an aggregation chamber, in which bundles with mean diameters ranging from 1.38 to 2.90 nm are formed from identical 3 microns long SWCNTs. The as-deposited TCFs from 1.38 nm bundles showed sheet resistances of 310 Ohms/sq. at 90% transparency, while those from larger bundles of 1.80 and 2.90 nm only reached values of 475 and 670 Ohms/sq., respectively. Based on these observations, we elucidate how networks formed by smaller bundles perform better due to their greater interconnectivity at a given optical density. Finally, we present a semi-empirical model for TCF performance as a function of SWCNT mean length and bundle diameter. This gives an estimate for the ultimate performance of non-doped, random network mixed-metallicity SWCNT TCFs at ~80 Ohms/sq. and 90% transparency. △ Less

Submitted 29 January, 2016; originally announced January 2016.

Gas phase synthesis of non-bundled, small diameter single-walled carbon nanotubes with near-armchair chiralities

Authors: Kimmo Mustonen, Patrik Laiho, Antti Kaskela, Zhen Zhu, Olivier Reynaud, Nikolay Houbenov, Ying Tian, Toma Susi, Hua Jiang, Albert G. Nasibulin, Esko I. Kauppinen

Abstract: We present a novel floating catalyst synthesis route for individual, i.e. non-bundled, small diameter single-walled carbon nanotubes (SWCNTs) with a narrow chiral angle distribution peaking at high chiralities near the armchair species. An ex situ spark discharge generator was used to form iron particles with geometric number mean diameters of 3-4 nm and fed into a laminar flow chemical vapour dep… ▽ More We present a novel floating catalyst synthesis route for individual, i.e. non-bundled, small diameter single-walled carbon nanotubes (SWCNTs) with a narrow chiral angle distribution peaking at high chiralities near the armchair species. An ex situ spark discharge generator was used to form iron particles with geometric number mean diameters of 3-4 nm and fed into a laminar flow chemical vapour deposition reactor for the continuous synthesis of long and high-quality SWCNTs from ambient pressure carbon monoxide. The intensity ratio of G/D peaks in Raman spectra up to 48 and mean tube lengths up to 4 microns were observed. The chiral distributions, as directly determined by electron diffraction in the transmission electron microscope, clustered around the (n,m) indices (7,6), (8,6), (8,7) and (9,6), with up to 70% of tubes having chiral angles over 20°. The mean diameter of SWCNTs was reduced from 1.10 to 1.04 nm by decreasing the growth temperature from 880 to 750 °C, which simultaneously increased the fraction of semiconducting tubes from 67 to 80%. Limiting the nanotube gas phase number concentration to approx. 100 000 per cubic centimetre successfully prevented nanotube bundle formation that is due to collisions induced by Brownian diffusion. Up to 80 % of 500 as-deposited tubes observed by atomic force and transmission electron microscopy were individual. Transparent conducting films deposited from these SWCNTs exhibited record low sheet resistances of 63 Ohms/sq. at 90 % transparency for 550 nm light. △ Less

Submitted 29 January, 2016; originally announced January 2016.

Measurement of optical second-harmonic generation from an individual single-walled carbon nanotube

Authors: M. J. Huttunen, O. Herranen, A. Johansson, H. Jiang, P. R. Mudimela, P. Myllyperkiö, G. Bautista, A. G. Nasibulin, E. I. Kauppinen, M. Ahlskog, M. Kauranen, M. Pettersson

Abstract: We show that optical second-harmonic generation (SHG) can be observed from individual single-walled carbon nanotubes (SWCNTs) and, furthermore, allows imaging of individual tubes. Detailed analysis of our results suggests that the structural noncentrosymmetry, as required for SHG, arises from the non-zero chiral angle of the SWCNT. SHG thus has potential as a fast, non-destructive, and simple meth… ▽ More We show that optical second-harmonic generation (SHG) can be observed from individual single-walled carbon nanotubes (SWCNTs) and, furthermore, allows imaging of individual tubes. Detailed analysis of our results suggests that the structural noncentrosymmetry, as required for SHG, arises from the non-zero chiral angle of the SWCNT. SHG thus has potential as a fast, non-destructive, and simple method for imaging of individual nanomolecules and for probing their chiral properties. Even more, it opens the possibility to optically determine the handedness of individual SWCNTs. △ Less

Submitted 20 March, 2013; originally announced March 2013.

Comments: 13 pages, 3 figures

Ultra-Thin Free-Standing Single Crystalline Silicon Membranes With Strain Control

Authors: Andrey Shchepetov, Mika Prunnila, Francesc Alzina, Lars Schneider, John Cuffe, Hua Jiang, Esko I. Kauppinen, Clivia M. Sotomayor Torres, Jouni Ahopelto

Abstract: We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling of the released membranes. We show that by changing the properties of the frame the strain of the membr… ▽ More We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling of the released membranes. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic and phononic phenomena. △ Less

Submitted 7 March, 2013; originally announced March 2013.

High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric

Authors: Marcus Rinkiö, Andreas Johansson, Marina Y. Zavodchikova, J. Jussi Toppari, Albert G. Nasibulin, Esko I. Kauppinen, Päivi Törmä

Abstract: Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trap** in the dielectric layer between the nanotube and the gate. This study includes 94… ▽ More Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their transfer characteristics. The hysteresis is often attributed to charge trap** in the dielectric layer between the nanotube and the gate. This study includes 94 CNT FET samples, providing an unprecedented basis for statistics on the hysteresis seen in five different CNT-gate configurations. We find that the memory effect can be controlled by carefully designing the gate dielectric in nm-thin layers. By using atomic layer depositions (ALD) of HfO$_{2}$ and TiO$_{2}$ in a triple-layer configuration, we achieve the first CNT FETs with consistent and narrowly distributed memory effects in their transfer characteristics. △ Less

Submitted 25 February, 2008; v1 submitted 15 January, 2008; originally announced January 2008.

Comments: 6 pages, 3 figures; added one reference, text reformatted with smaller additions