Showing 1–40 of 40 results for author: Katiyar, R S

High Entropy Oxide Relaxor Ferroelectrics

Authors: Yogesh Sharma, Min-Cheol Lee, Krishna C. Pitike, Karuna K. Mishra, Qiang Zheng, Xiang Gao, Brianna L. Musico, Alessandro R. Mazza, Ram S. Katiyar, Veerle Keppens, Matthew Brahlek, Dmitry A. Yarotski, Rohit P. Prasankumar, Ai** Chen, Valentino R. Cooper, T. Zac Ward

Abstract: Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional do** of known ferroelectrics, as slight changes to local compositional order can significantl… ▽ More Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional do** of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Properties of the low-frequency phonon spectra of ferroelectric barium titanate-based heterostructures

Authors: E. D. Gor'kovaya, Yu. A. Tikhonov, V. I. Torgashev, A. S. Mikheykin, I. A. Luk'yanchuk, D. Mezzane, N. Ortega, A. Kumar, R. S. Katiyar, A. G. Razumnaya

Abstract: Polarized Raman spectra of the epitaxial Ba0.5Sr0.5TiO3 film, bi-color BaTiO3/Ba0.5Sr0.5TiO3 superlattice, and tri-color BaTiO3/Ba0.5Sr0.5TiO3/SrTiO3 superlattice were studied in a broad temperature range of 80-700 K. Based on the temperature dependence of the polar modes we determined the phase transitions temperatures in the studied heterostructures. In the sub-THz frequency range of the Y(XZ)Y… ▽ More Polarized Raman spectra of the epitaxial Ba0.5Sr0.5TiO3 film, bi-color BaTiO3/Ba0.5Sr0.5TiO3 superlattice, and tri-color BaTiO3/Ba0.5Sr0.5TiO3/SrTiO3 superlattice were studied in a broad temperature range of 80-700 K. Based on the temperature dependence of the polar modes we determined the phase transitions temperatures in the studied heterostructures. In the sub-THz frequency range of the Y(XZ)Y spectra, we revealed the coexistence of the Debye-type central peak and soft mode in bi-color BaTiO3/Ba0.5Sr0.5TiO3 superlattice. △ Less

Submitted 7 October, 2019; originally announced October 2019.

Journal ref: Ferroelectrics, 543, 36 (2019)

Effect of Ba and Zr co-substitution on dielectric and magnetoelectric properties of BiFeO3 multiferroics

Authors: Satya Tripathy, Dhiren Pradhan, S Sen, BG Mishra, R Palai, JF Scott, R. S. Katiyar, Dillip pradhan

Abstract: We report the effect of Ba and Zr co-substitution on structural, dielectric, magnetic and magnetoelectric properties of BiFeO3 multiferroics. Polycrystalline nanoceramic samples of Bi1- xBaxFe1-yZryO3 have been synthesized by auto-combustion method. Rietveld refinement result of X-ray diffraction data indicate a contraction of unit cell volume with increase in x and y. Field emission scanning elec… ▽ More We report the effect of Ba and Zr co-substitution on structural, dielectric, magnetic and magnetoelectric properties of BiFeO3 multiferroics. Polycrystalline nanoceramic samples of Bi1- xBaxFe1-yZryO3 have been synthesized by auto-combustion method. Rietveld refinement result of X-ray diffraction data indicate a contraction of unit cell volume with increase in x and y. Field emission scanning electron micrographs show densely populated grains without any voids or defects with well-defined grain boundary and decrease in grain size with increasing x and y. The result of dielectric measurement display anomalies, which are amplified and the temperature at which dielectric anomalies observed decreases with increasing composition. A cross-over from anti-ferromagnetism to weak ferromagnetism has been observed at x = y = 0.1 with enhanced magnetization as compared to pure BiFeO3. Ferroelectric properties of the sample have been studied using PE loop measurement. Magneto-dielectric and magneto impedance spectroscopy reveal the existence of intrinsic magneto-electric coupling at room temperature. △ Less

Submitted 9 September, 2019; originally announced September 2019.

Comments: 32 Pages, 9 Figures

Self-Assembled Room Temperature Multiferroic BiFeO3-LiFe5O8 Nanocomposites

Authors: Yogesh Sharma, Radhe Agarwal, Liam Collins, Qiang Zheng, Anton V. Ivelev, Raphael P. Hermann, Valentino R. Cooper, Santosh KC, Ilia N. Ivanov, Ram S. Katiyar, Sergei V. Kalinin, Ho Nyung Lee, Seungbum Hong, Thomas Z. Ward

Abstract: Multiferroic materials have driven significant research interest due to their promising technological potential. Develo** new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8… ▽ More Multiferroic materials have driven significant research interest due to their promising technological potential. Develo** new room-temperature multiferroics and understanding their fundamental properties are important to reveal unanticipated physical phenomena and potential applications. Here, a new room temperature multiferroic nanocomposite comprised of an ordered ferrimagnetic spinel LiFe5O8 (LFO) and a ferroelectric perovskite BiFeO3 (BFO) is presented. We observed that lithium (Li)-do** in BFO favors the formation of LFO spinel as a secondary phase during the synthesis of LixBi1-xFeO3 nanoceramics. Multimodal functional and chemical imaging methods are used to map the relationship between do**-induced phase separation and local ferroic properties in both the BFO-LFO composite ceramics and self-assembled nanocomposite thin films. The energetics of phase separation in Li doped BFO and the formation of BFO-LFO composites is supported by first principles calculations. These findings shed light on Li-ion role in the formation of a functionally important room temperature multiferroic and open a new approach in the synthesis of light element doped nanocomposites. △ Less

Submitted 13 August, 2019; originally announced August 2019.

Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer

Authors: Anand P. S. Gaur, Adriana M. Rivera, Saroj P. Dash, Sandwip Dey, Ram S. Katiyar, Satyaprakash Sahoo

Abstract: Charge do** in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical do** in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL… ▽ More Charge do** in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical do** in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggest n-type do** in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal significant enhancement of trion emission intensity over the excitonic emission at low temperature indicating the stability of trion at low temperature. The temperature dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical do** in 1L WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronics applications. △ Less

Submitted 7 June, 2019; originally announced June 2019.

Plasmon Soft Mode in an Organic-Inorganic Hybrid Perovskite

Authors: Jiyu Tian, Karuna Kara Mishra, Eli Zysman-Colman, Finlay D. Morrison, Ram S. Katiyar, James F. Scott

Abstract: We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon fre… ▽ More We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon frequency and linewidth agree with independent measurements, and the impedance analysis reveals a frequency dependence (modelled by a constant phase element, CPE) that can be identified as due to electron-phonon coupling. The dependence of plasmon frequency upon (TC-T) is analogous to that for magnons in magnetic insulators or soft transverse optical phonons in ferroelectrics and ferroelastics, or for phasons in incommensurately modulated insulators. △ Less

Submitted 16 April, 2019; originally announced April 2019.

Comments: 11 pages, 3 figures

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Authors: André Dankert, Parham Pashaei, M. Venkata Kamalakar, Anand P. S. Gaur, Satyaprakash Sahoo, Ivan Rungger, Awadhesh Narayan, Kapildeb Dolui, Anamul Hoque, Michel P. de Jong, Ram S. Katiyar, Stefano Sanvito, Saroj P. Dash

Abstract: The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 %… ▽ More The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: ACS Nano, 2017, 11 (6), pp 6389-6395

Effect of Substrate Temperature on Structural and Magnetic Properties of c-axis Ori-ented Spinel Ferrite Ni0.65Zn0.35Fe2O4 (NZFO) Thin Films

Authors: Dhiren K. Pradhan, Shalini Kumari, Dillip K. Pradhan, Ashok Kumar, Ram S. Katiyar, R. E. Cohen

Abstract: Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin fi… ▽ More Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin films grown on various growth temperatures conditions reveal that these films are smooth with low roughness, however the thin films grown at 800 C exhibit lowest average and rms roughness among all thin films. We find iron and nickel to be more oxidized i,e greater Fe and Ni content in films grown and annealed at 700 C and 800 C, compared to those grown at lower temperatures. The magnetic moment is observed to increase with an increase of substrate temperature and all thin films possess high saturation magnetization and low coercive field at room temperature. Films grown at 800 C exhibit a ferrimagnetic paramagnetic phase transition well above room temperature. The observed large magnetizations with soft magnetic behavior in NZFO thin films above room temperature suggest potential application in memory, spintronics, and multifunctional devices. △ Less

Submitted 28 June, 2018; v1 submitted 6 April, 2018; originally announced April 2018.

Comments: 12 pages, 5 figures

Ultrahigh capacitive energy storage in highly oriented BaZr(x)Ti(1-x)O3 thin films prepared by pulsed laser deposition

Authors: Alvaro A. Instan, Shojan P. Pavunny, Mohan K. Bhattarai, Ram S. Katiyar

Abstract: We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric c… ▽ More We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric constant of ~1400 - 3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 +/- 1 and 156 +/- 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ~3 MV/cm with an efficiency of 72.8 +/- 0.6 % in optimum 30% Zr substituted BaTiO3 composition. △ Less

Submitted 26 August, 2017; originally announced August 2017.

Optically Controlled Polarization in Highly Oriented Ferroelectric Thin Films

Authors: Hitesh Borkar, M Tomar, Vinay Gupta, Ram S. Katiyar, J. F. Scott, Ashok Kumar

Abstract: The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illuminati… ▽ More The out-of-plane and in-plane polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3(PLBZT) thin film has studied in the dark and under illumination of a weak light source of a comparable bandgap. A highly oriented PLBZT thin film was grown on LaNiO3 (LNO)/LaAlO3(LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization and its significant enhancement under illumination of light. We have employed two configurations for polarization characterization; first deals with out of plane polarization with single capacitor under investigation, whereas second demonstrates the two capacitors connected in series via the bottom electrode. Two different configurations were illuminated using different energy sources and their effects were studied. The latter configuration shows a significant change in polarization under illumination of light that may provide an extra degree of freedom for device miniaturization. The polarization was also tested using positive-up & negative-down (PUND) measurements which confirm robust polarization and their switching under illumination. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: Accepted in Materials Research Express

Report number: Article reference: MRX-104334.R3

PbTi1-xPdxO3: A New Room-temperature Magnetoelectric Multiferroic Device Material

Authors: Elzbieta Gradauskaite, Jonathan Gardner, Rebecca M. Smith, Finlay D. Morrison, Stephen L. Lee, Ram S. Katiyar, James F. Scott

Abstract: There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gall… ▽ More There have been a large number of papers on bismuth ferrite (BiFeO3) over the past few years, trying to exploit its room-temperature magnetoelectric multiferroic properties. Although these are attractive, BiFeO3 is not the ideal multiferroic, due to weak magnetization and the difficulty in limiting leakage currents. Thus there is an ongoing search for alternatives, including such materials as gallium ferrite (GaFeO3). In the present work we report a comprehensive study of the perovskite PbTi1-xPdxO3 with 0 < x < 0.3. Our study includes dielectric, impedance and magnetization measurements, conductivity analysis and study of crystallographic phases present in the samples with special attention paid to minor phases, identified as PdO, PbPdO2, and Pd3Pb. The work is remarkable in two ways: Pd is difficult to substitute into ABO3 perovskite oxides (where it might be useful for catalysis), and Pd is magnetic under only unusual conditions (under strain or internal electric fields). The new material, as a PZT derivative, is expected to have much stronger piezoelectric properties than BiFeO3. △ Less

Submitted 7 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 104104 (2017)

Unipolar resistive switching in cobalt titanate thin films

Authors: Atul Thakre, A. K. Shukla, R. S. Katiyar, Ashok Kumar

Abstract: We report giant resistive switching of an order of 104, long-time charge retention characteristics up to 104 s, non-overlap** SET and RESET voltages, ohmic in low resistance state (LRS) and space charge limited current (SCLC) mechanism in high resistance state (HRS) properties in polycrystalline perovskite Cobalt Titanate (CoTiO3 ~ CTO) thin films. Impedance spectroscopy study was carried out fo… ▽ More We report giant resistive switching of an order of 104, long-time charge retention characteristics up to 104 s, non-overlap** SET and RESET voltages, ohmic in low resistance state (LRS) and space charge limited current (SCLC) mechanism in high resistance state (HRS) properties in polycrystalline perovskite Cobalt Titanate (CoTiO3 ~ CTO) thin films. Impedance spectroscopy study was carried out for both LRS and HRS states which illustrates that only bulk resistance changes after resistance switching, however, there is a small change (<10% which is in pF range) in the bulk capacitance value in both states. These results suggest that in LRS state current filaments break the capacitor in many small capacitors in a parallel configuration which in turn provides the same capacitance in both states even there was 90 degree changes in phase-angle and an order of change in the tangent loss. △ Less

Submitted 10 March, 2017; originally announced March 2017.

Comments: 7 pages, 4 figures

Room-temperature relaxor ferroelectricity and photovoltaic effects in SnTiOx/Si thin film heterostructures

Authors: Radhe Agarwal, Yogesh Sharma, Siliang Chang, Krishna Pitike, Changhee Sohn, Serge M. Nakhmanson, Christos G. Takoudis, Ho Nyung Lee, James F. Scott, Ram S. Katiyar, Seungbum Hong

Abstract: We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling m… ▽ More We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis loops with remnant polarization of 1.5 $μ$C/cm$^{2}$ at room temperature, as detected by out-of-plane polarization versus electric field (P-E) and field cycling measurements. A photo-induced enhancement in ferroelectricity was also observed as the spontaneous polarization increased under white-light illumination. The ferroelectricity exhibits relaxor characteristics with dielectric peak shifting from ca. T = 600 K at f = 1 MHz to ca. 500 K at 100 Hz. Moreover, our films showed ferroelectric photovoltaic behavior under the illumination of a wide spectrum of light, from visible to ultraviolet regions. A combination of experiment and theoretical calculation provided optical band gap of SnTiO$_{x}$ films which lies in the visible range of white light spectra. Our study leads a way to develop green ferroelectric SnTiO$_{x}$ thin films, which are compatible to semiconducting processes, and can be used for various ferroelectric and dielectric applications. △ Less

Submitted 15 February, 2017; originally announced February 2017.

Comments: 24 pages, 10 figures

Journal ref: Phys. Rev. B 97, 054109 (2018)

Ferrielectricity in an Organic Ferroelectric

Authors: James F. Scott, Finlay D. Morrison, Rebecca Clulow, Philip Lightfoot, Aurora Gherson, Sylvia C. Capelli, Michael R. Probert, S. Sahoo, James S. Young, Ram S. Katiyar

Abstract: We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130… ▽ More We report ferrielectricity in a single-phase crystal, TSCC -- tris-sarcosine calcium chloride [(CH3NHCH2COOH)3CaCl2]. Ferrielectricity is well known in smectic liquid crystals but almost unknown in true crystalline solids. Pulvari reported it in 1960 in mixtures of ferroelectrics and antiferroelectrics, but only at high fields. TSCC exhibits a second-order displacive phase transition near Tc = 130 K that can be lowered to a Quantum Critical Point at zero Kelvin via Br- or I-substitution, and phases predicted to be antiferroelectric at high pressure and low temperatures. Unusually, the size of the primitive unit cell does not increase. We measure hysteresis loops and polarization below T = 64 K and clear Raman evidence for this transition, as well of another transition near 47-50 K. X-ray and neutron studies below Tc = 130K show there is an antiferroelectric displacement out of plane of two sarcosine groups; but these are antiparallel displacements are of different magnitude, leading to a bias voltage that grows with decreasing T. A monoclinic subgroup C2 may be possible at the lowest temperatures (T<64K or T<48K), but no direct evidence exists for a crystal class lower than orthorhombic. △ Less

Submitted 18 June, 2016; originally announced June 2016.

Comments: 21 pages; 8 figures; 25 references

Journal ref: Phys. Rev. B 95, 094119 (2017)

Giant Magnetoelectric coupling in Single Phase Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ Multiferroics

Authors: Shalini Kumari, Dhiren K. Pradhan, Nora Ortega, Kallol Pradhan, Christopher DeVreugd, Gopalan Srinivasan, Ashok Kumar, J. F. Scott, Ram S. Katiyar

Abstract: During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupa… ▽ More During the last fifteen years, multiferroic (MF) research communities have been searching for an alternative room temperature MF material with large magnetoelectric (ME) coupling for possible applications in high density electronic components, low heat dissipation memory and logic devices. We have studied Pb(Zr0.20Ti0.80)0.70Pd0.30O3-δ (PZTP30) system with an unusually large (30%) palladium occupancy in B site of PZT. This material exhibited a giant ME coupling coefficient ~0.36 mV/cm.Oe. Interestingly, this is the first time any room temperature single phase compound that showed ME trends, and magnitude similar to those in the well established mechanical strain-mediated ferroelectric and ferromagnetic composites; the latter ones are already in the commercial stage as nT/pT magnetic field sensors due to their large ME values. The presence of Pd in PZTP30 has been confirmed by XPS and XRF studies and assigned with related binding energies of Pd+2 and Pd+4 ions as 336.37 eV, 342.9 eV, and 337.53 eV, 343.43 eV, respectively, which may be the origin of room temperature magnetism in Pd substituted PZT ceramics. A sharp first order ferroelectric phase transition was observed at ~569 K (+/-5 K) that is confirmed from dielectric, Raman, and thermal analysis. Both ferromagnetic and ferroelectric orderings with large ME coupling were found above room temperature, a significant step forward in the development of single phase ME material with enhanced functionalities. △ Less

Submitted 24 March, 2016; originally announced March 2016.

Comments: 37 pages, 9 figures

Pyroelectric Control of Spin Polarization Assisted Coexistence of Giant Positive and Negative Magnetocaloric Effects

Authors: Gaurav Vats, Ashok Kumar, Ram S. Katiyar, Nora Ortega

Abstract: Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied magnetic field4 have proven to be the milestones in this direction. This article propose how these phenomena could be utilized in a reverse manner to gain contr… ▽ More Electric field control of magnetism is the key to many next generation spintronics applications1. Ferroelectric control of spin polarization2,3 followed by the electrically driven repeatable magnetization reversal in the absence of applied magnetic field4 have proven to be the milestones in this direction. This article propose how these phenomena could be utilized in a reverse manner to gain control over magnetization even in the absence of electric field. In turn, coexistence of positive5 as well as negative6 magnetocaloric effect (MCE) is attained in tri-layered PbZr0.53Ti0.47O3-CoFe2O4-PbZr0.53Ti0.47O3 (PZT/CFO/PZT) nanostructures for identical temperature ranges when subjected to different applied magnetic fields. Unlike conventional approaches5-9 the present study demonstrate that it is possible to obtain giant MCE merely by magneto-pyroelectric coupling. Consequently, the MCE entropy changes calculated using Maxwell equations are found to be as large as reported for existing giant MCE values6,9,10. △ Less

Submitted 30 December, 2015; originally announced December 2015.

Comments: 15 pages, 4 figure and 1 table

Switchable photovoltaic and polarization modulated rectification in Si-integrated Pt-(Bi0.9Sm0.1)(Fe0.97Hf0.03)O3-LaNiO3 heterostructures

Authors: Radhe Agarwal, Yogesh Sharma, Ram S. Katiyar

Abstract: We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC… ▽ More We studied switchable photovoltaic and photo-diode characteristics of Pt (Bi0.9Sm0.1)(Fe0.97Hf0.03)O3 LaNiO3 (Pt BSFHO LNO) heterostructures integrated on Si (100). The directions of photocurrent (JSC) and rectification are found to be reversibly switchable after applying external poling voltages. In pristine state, metal-ferroelectric-metal capacitor Pt BSFHO LNO shows JSC 32 microAmp cm2 and VOC 0.04 V, which increase to maximum value of JSC 303 ( 206) microAmp cm2 and VOC 0.32 (0.26) V after upward (downward) poling at 8 V. We believe that Schottky barrier modulation by polarization flip** at Pt BSFHO interface could be a main driving force behind switchable photovoltaic and rectifying diode characteristics of Pt BSFHO LNO heterostructures. △ Less

Submitted 12 October, 2015; originally announced October 2015.

Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions

Authors: Ashok Kumar, D. Barrionuevo, N Ortega, A. K. Shukla, Santiranjan Shannigrahi, J. F. Scott, Ram S. Katiyar

Abstract: Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar cap** on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) cap** show nearly 100% enhancement in magnetization compared… ▽ More Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar cap** on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) cap** show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar cap**. △ Less

Submitted 27 March, 2015; originally announced March 2015.

Comments: 17 pages, 5 figures

Structural phase transition of ternary high-k dielectric SmGdO3: Evidence from ADXRD and Raman Spectroscopic Studies

Authors: Yogesh Sharma, Pankaj Misra, Satyaprakash Sahoo, A. K. Mishra, S. M. Sharma, Ram S. Katiyar

Abstract: High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at about 8.9 GPa. The observed pressure-volume data were fitted into the third order Birch-Murnaghan equation of state yielding zero pr… ▽ More High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at about 8.9 GPa. The observed pressure-volume data were fitted into the third order Birch-Murnaghan equation of state yielding zero pressure bulk moduli B0 = 132(22) and 177(22) GPa for monoclinic and hexagonal phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the phase transition. The mode Gruneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phase of SGO were calculated. △ Less

Submitted 29 August, 2014; originally announced August 2014.

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

Authors: Anand P. S. Gaur, Satyaprakash Sahoo, Majid Ahmadi, Saroj P Dash, Maxime J-F Guinel, Ram S. Katiyar

Abstract: MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in… ▽ More MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in low dimensions. Present work reports the synthesis of large area MoS2 films on insulating substrates with different surface morphology via vapor phase deposition by varying the growth temperatures. The crystallinity of the samples is examined by transmission electron microscopy and Raman spectroscopy. From contact angle measurements, it is possible to correlate the wettability with crystallinity at nanoscale. The specific surface energy for few layers thick MoS2 is estimated to be around 46.5 mJ/m2. Our results shed light on the MoS2-water interaction which is significant for develo** important devices based on MoS2 coated surfaces for micro-fluidic applications. △ Less

Submitted 12 March, 2014; originally announced March 2014.

Multifunctional Magnetoelectric Materials for Device Applications

Authors: N. Ortega, Ashok Kumar, J. F. Scott, Ram S. Katiyar

Abstract: Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pu… ▽ More Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a variety of device applications. Since single-phase materials exist rarely in nature with such cross-coupling properties, an intensive research activity is being pursued towards the discovery of new single-phase multiferroic materials and the design of new engineered materials with strong magneto-electric (ME) coupling. This review article summarizes the development of different kinds of multiferroic material: single-phase and composite ceramic, laminated composite, and nanostructured thin films. Thin-film nanostructures have higher magnitude direct ME coupling values and clear evidence of indirect ME coupling compared with bulk materials. Promising ME coupling coefficients have been reported in laminated composite materials in which signal to noise ratio is good for device fabrication. We describe the possible applications of these materials. △ Less

Submitted 7 March, 2014; originally announced March 2014.

Ferroelectric and Photovoltaic Properties of Transition Metal doped Pb(Zr0.14Ti0.56Ni0.30)O3-delta Thin Films

Authors: Shalini Kumari, Nora Ortega, Ashok Kumar, J. F. Scott, R. S. Katiyar

Abstract: We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly… ▽ More We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric ferroelectric material sensitive to visible light. △ Less

Submitted 3 March, 2014; originally announced March 2014.

Comments: 20 pages, 6 figures

Temperature dependent Raman study of phonons of different symmetries in single crystal Bi2Se3

Authors: Bushra Irfan, Satyaprakash Sahoo, Anand P. S. Gaur, Majid Ahmadi, Maxime J-F Guinel, Ram S. Katiyar, Ratnamala Chatterjee

Abstract: High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with… ▽ More High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively. △ Less

Submitted 17 January, 2014; originally announced January 2014.

Comments: 5 pages, 4 figures

Phonons correlation with magnetic excitations in weak ferromagnet YCrO3

Authors: Yogesh Sharma, Satyaprakash Sahoo, W. Perez, Ram S. Katiyar

Abstract: We report on the temperature dependent Raman spectroscopic studies of orthorombic distorted perovskite YCrO3 in the temperature range of 20-300K. Temperature dependence of DC-magnetization measurement under field cooled and zero field cooled modes confirmed the transition temperature (TN ~142K) and anomalous characteristic temperature (T* ~60K), above which magnetization tends to saturate. Magneti… ▽ More We report on the temperature dependent Raman spectroscopic studies of orthorombic distorted perovskite YCrO3 in the temperature range of 20-300K. Temperature dependence of DC-magnetization measurement under field cooled and zero field cooled modes confirmed the transition temperature (TN ~142K) and anomalous characteristic temperature (T* ~60K), above which magnetization tends to saturate. Magnetization isotherm recorded below TN at 125K shows clear loop opening without magnetization saturation up to 20kOe, indicating the coexistence of antiferromagnetic (AFM) interaction with weak ferromagnetic (WFM) phase. Mean field calculation for exchange constants further confirms the complex magnetic phase below TN. Temperature evolution of lineshape parameters of selected modes (associated with the octahedral rotation and A-shift in the unit cell) revealed anomalous phonon shift near Cr3+ magnetic ordering temperature (TN ~142K). Additional phonon anomaly was identified at T* ~60K in agreement with the magnetization results and reflects the change in spin dynamics, plausibly due to the change in Cr-spin configuration. Moreover, the positive and negative shift in Raman frequency below TN revel the existence of competing WFM and AFM exchanges. The phonon shift of B3g (3)-octahedral rotation mode fairly scaled with the square of sublattice magnetization from TN to T*, below which it start to depart from theconventional behaviour and need further attention. This correlation between magnetic and Raman data elucidate the spin-phonon coupling owing to the multiferroic phenomenon in YCrO3. △ Less

Submitted 27 September, 2013; originally announced September 2013.

Comments: 22 pages, 8 figures

Optical Properties and Raman Studies of Partially Edge Terminated Vertically Aligned Nanocrystalline MoS2 Thin Film

Authors: Anand P. S. Gaur, Satyaprakash Sahoo, Majid Ahmadi, Maxime J-F Guinel, Sanjeev K. Gupta, Ravindra Pandey, Sandwip K Dey, Ram S. Katiyar

Abstract: The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The… ▽ More The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The films were highly transparent (~80%) but the percent of transmittance decreased as the energy of the incident light approached to the band gap. Additionally, weak excitonic peaks were observed both in the absorption and transmission spectra. The room temperature Raman study showed that both the E12g and A1g modes were significantly broader, and a few additional Raman modes were observed when compared to bulk MoS2. The broadening of the A1g mode was analyzed using the phonon-confinement model and the calculated particle size was in good agreement with TEM observations. Moreover, the temperature coefficient of the A1g mode was estimated from the temperature dependent Raman studies. △ Less

Submitted 18 July, 2013; originally announced July 2013.

Comments: arXiv admin note: text overlap with arXiv:1109.5499 by other authors

Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2

Authors: Satyaprakash Sahoo, Anand P. S. Gaur, Majid Ahmadi, Maxime J-F Guinel, Ram S. Katiyar

Abstract: We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g… ▽ More We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK. △ Less

Submitted 14 March, 2013; v1 submitted 23 February, 2013; originally announced February 2013.

Journal ref: J. Phys. Chem. C, 2013, 117 (17), pp 9042-9047 2013

Reduced graphene oxide as ultra fast temperature sensor

Authors: Satyaprakash Sahoo, Sujit K. Barik, G. L. Sharma, Geetika Khurana, J. F. Scott, Ram S. Katiyar

Abstract: We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by kee** and removing a block of ice under the rGO sensor, which shows the resistance of rGO… ▽ More We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by kee** and removing a block of ice under the rGO sensor, which shows the resistance of rGO increases by 15% in 592 miliseconds and recovers in 8.92 seconds. The temperature sensing of rGO is compared with a standard platinum thermo sensor (Pt 111) and found the sensitivity is much better in rGO. △ Less

Submitted 5 September, 2012; v1 submitted 9 April, 2012; originally announced April 2012.

Comments: Paper is withdrawn

In-plane Dielectric and Magnetoelectric Studies of BiFeO3

Authors: Ashok Kumar, J. F. Scott, R. Martinez, G. Srinivasan, R. S. Katiyar

Abstract: In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the "transition" first reported by Polomska et al. [Phys. Stat. Sol. 23, 567 (1974)]. The 550 K anomalies coincide with the surface… ▽ More In-plane temperature dependent dielectric behavior of BiFeO3 (BFO) as-grown thin films show diffuse but prominent phase transitions near 450 (+/-10) K and 550 K with dielectric loss temperature dependences that suggest skin layer effects. The 450 K anomalies are near the "transition" first reported by Polomska et al. [Phys. Stat. Sol. 23, 567 (1974)]. The 550 K anomalies coincide with the surface phase transition recently reported [Xavi et al. PRL 106, 236101 (2011)]. In addition, anomalies are found at low temperatures: After several experimental cycles the dielectric loss shows a clear relaxor-like phase transition near what was previously suggested to be a spin reorientation transition (SRT) temperature (~ 201 K) for frequencies 1 kHz < f < 1MHz which follow a nonlinear Vogel-Fulcher (V-F) relation; an additional sharp anomaly is observed near ~180 K at frequencies below 1 kHz. As emphasized recently by Cowley et al. [Adv. Phys. 60, 229 (2011)], skin effects are expected for all relaxor ferroelectrics. Using the interdigital electrodes, experimental data and a theoretical model for in-plane longitudinal and transverse direct magnetoelectric (ME) coefficient are presented. △ Less

Submitted 20 February, 2012; originally announced February 2012.

Comments: 14 pages, 4 figures

High-temperature spin-wave propagation in BiFeO3: relation to the Polomska transition

Authors: Ashok Kumar, J. F. Scott, R. S. Katiyar

Abstract: In bismuth ferrite thin films the cycloidal spiral spin structure is suppressed, and as a result the spin-wave magnon branches of long wavelength are reduced from a dozen to one, at ω= 19.2 cm-1 (T=4K). This spin wave has not been measured previously above room temperature, but in the present work we show via Raman spectroscopy that it is an underdamped propagating wave until 455 K. This has impor… ▽ More In bismuth ferrite thin films the cycloidal spiral spin structure is suppressed, and as a result the spin-wave magnon branches of long wavelength are reduced from a dozen to one, at ω= 19.2 cm-1 (T=4K). This spin wave has not been measured previously above room temperature, but in the present work we show via Raman spectroscopy that it is an underdamped propagating wave until 455 K. This has important room-temperature device implications. The data show that ω(T) follows an S=5/2 Brillouin function and hence its Fe+3 ions are in the high-spin 5/2 state and not the low-spin S=1/2 state. The spin wave cannot be measured as a propagating wave above 455 K. We also suggest that since this temperature is coincident with the mysterious "Polomska transition" (M. Polomska et al., Phys. Stat. Sol. A 23, 567, (1974)) at 458+/-5 K, that this may be due to overdam**. △ Less

Submitted 5 February, 2012; originally announced February 2012.

Comments: 17 pages, 5 figures

Novel room temperature Multiferroics for Random Access Memory Elements

Authors: Ashok Kumar, Ram S. Katiyar, James F. Scott

Abstract: We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD) [epitaxial] onto Pt/Ti/SiO2/Si(100) and SrTiO3/Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via… ▽ More We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD) [epitaxial] onto Pt/Ti/SiO2/Si(100) and SrTiO3/Si substrates. These exhibit ferroelectricity and (weak) ferromagnetism above room temperature with strain coupling via electrostriction and magnetostriction. Application of modest magnetic field strength ((mu)0H < 1.0 Tesla) destabilizes the long-range ferroelectric ordering and switches the polarization from ca. 22 (mu)C/cm2 (0.22 C/m2) to zero (relaxor state). This offers the possibility of three-state logic (+P, 0, -P) and magnetically switched polarizations. Because the switching is of large magnitude (unlike the very small nC/cm2 values in terbium manganites) and at room-temperature, commercial devices should be possible. △ Less

Submitted 16 June, 2010; originally announced June 2010.

Comments: 19 pages, 7 figures

Magnetic Effects on Dielectric and Polarization Behavior of Multiferroic Hetrostructures

Authors: Sandra Dussan, Ashok Kumar, J. F. Scott, Ram S. Katiyar

Abstract: PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric constant(400-1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequenc… ▽ More PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric constant(400-1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequency-dependent change in dielectric constant and loss were observed above the ferromagnetic-paramagnetic temperature. The frequency dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect across the bilayer; an enhanced magnetoelectric interaction may be due to the Parish-Littlewood mechanism of inhomogeneity near the metal-dielectric interface. △ Less

Submitted 9 February, 2010; originally announced February 2010.

Comments: 9 pages, 4 figures

Processing and Characterization of Multiferroic Bi-relaxors

Authors: Ashok Kumar, R. S. Katiyar, J. F. Scott

Abstract: We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabr… ▽ More We compare chemical solution deposition (CSD), and pulsed-laser-deposition (PLD), specimens of the new room-temperature, single-phase, multiferroic magnetoelectric, [PbFe2/3W1/3O3]x[PbZr0.53Ti0.47O3]1-x (PZTFWx ~ 0.40<x<0.20) with polarization, loss (<1%), and resistivity (typically 108 ohm.cm) equal to or superior to BiFeO3. Single phase polycrystalline multiferroics PZTFWx thin films were fabricated on platinized silicon substrate by CSD and as epitaxial single-crystal films on MgO substrate by PLD. High dielectric constants (1200- 3000), high polarization (30 - 60 micro C/cm2), weak saturation magnetization (0.48 - 4.53 emu/cm3), a broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current were observed in these materials, suggesting the family as candidates for room-temperature multiferroic devices. The ferroelectric switching in these materials can be suppressed or quenched with applied magnetic field. △ Less

Submitted 8 February, 2010; originally announced February 2010.

Comments: 23 pages, 16 figures

Phonon Spectroscopy Near Phase Transition Temperatures in Multferroic BiFeO3 Epitaxial Thin Films

Authors: R. Palai, J. F. Scott, R. S. Katiyar

Abstract: We report a Raman scattering investigation of multiferroic bismuth ferrite BiFeO3 epitaxial (c-axis oriented) thin films from -192 to 1000C. Phonon anomalies have been observed in three temperature regions: in the gamma-phase from 930C to 950C; at ~370C, Neel temperature (TN), and at ~123C, due to a phase transition of unknown type (magnetic or structural). An attempt has been made to understand… ▽ More We report a Raman scattering investigation of multiferroic bismuth ferrite BiFeO3 epitaxial (c-axis oriented) thin films from -192 to 1000C. Phonon anomalies have been observed in three temperature regions: in the gamma-phase from 930C to 950C; at ~370C, Neel temperature (TN), and at ~123C, due to a phase transition of unknown type (magnetic or structural). An attempt has been made to understand the origin of the weak phonon-magnon coupling and the dynamics of the phase sequence. The disappearance of several Raman modes at ~820C (Tc) is compatible with the known structural phase transition and the Pbnm orthoferrite space group assigned by Arnold {\it et al.} \cite{arnold:09}. The spectra also revealed a {\it non-cubic} $β$-phase from 820-930\dc and the same {\it non-cubic} phase extends through the $γ$-phase between 930-950\dc, in agreement with Arnold {\it et al.} \cite{arnold2:09}, and an evidence of a cubic $δ$-phase around 1000\dc in thin films that is not stable in powder and bulk. Such a cubic phase has been theoretically predicted in \cite{vasquez:prb09}. Micro-Raman scattering and X-ray diffraction showed no structural decomposition in thin films during the thermal cycling from 22-1000\dc. △ Less

Submitted 12 January, 2010; originally announced January 2010.

Comments: 7 pages, 3 figures

Almeida-Thouless Line in BiFeO3: Is Bismuth Ferrite a mean field spin glass?

Authors: Manoj K. Singh, Ram S. Katiyar, W. Prellier, J. F. Scott

Abstract: Low-temperature magnetic properties of epitaxial BiFeO3 thin films grown on (111)-SrTiO3 substrates have been studied. ZFC and FC magnetization curves show a large discrepency beginning at a characteristic temperature Tf that is dependent on the magnetic-field strengh. Tf(H) varies according to the well known de Aleimda-Thouless line (varies in Hexp(2/3)) suggesting an acentric long rnage spin-g… ▽ More Low-temperature magnetic properties of epitaxial BiFeO3 thin films grown on (111)-SrTiO3 substrates have been studied. ZFC and FC magnetization curves show a large discrepency beginning at a characteristic temperature Tf that is dependent on the magnetic-field strengh. Tf(H) varies according to the well known de Aleimda-Thouless line (varies in Hexp(2/3)) suggesting an acentric long rnage spin-glass behavior and mean field system. △ Less

Submitted 14 November, 2008; originally announced November 2008.

Comments: Submitted to J. Phys. Cond. Matter

Journal ref: J. Phys.: Condens. Matter 21 (2008) 042202

One-magnon (electromagnon) light scattering in BiFeO3 single crystals

Authors: Manoj K. Singh, Ram S. Katiyar, J. F. Scott

Abstract: We observed Raman scattering from magnon in frequency range from 10 to 65 cm-1 in BiFeO3 single crystals at cryogenic temperatures; the temperature dependence of the magnon frequency at 18.2 cm-1 approximates an S=5/2 Brillouin function up to the temperature (280 K) at which the magnon becomes overdamped. The diverging cross-section and the frequency-shift at 140K and 200 K implies a magnon-reor… ▽ More We observed Raman scattering from magnon in frequency range from 10 to 65 cm-1 in BiFeO3 single crystals at cryogenic temperatures; the temperature dependence of the magnon frequency at 18.2 cm-1 approximates an S=5/2 Brillouin function up to the temperature (280 K) at which the magnon becomes overdamped. The diverging cross-section and the frequency-shift at 140K and 200 K implies a magnon-reorientation transition as in orthoferrites. Magnons in polar materials such as BiFeO3 are often termed electromagnons meaning that they possess an electric dipole moment due to magnetoelectric coupling. △ Less

Submitted 28 January, 2008; v1 submitted 24 December, 2007; originally announced December 2007.

Comments: 6 pages, 4 figures

Observation of Spin-glass-like Behavior in SrRuO3 Epitaxial Thin Films

Authors: R Palai, H Huhtinen, R. S. Katiyar, J. F. Scott

Abstract: We report the observation of spin-glass-like behavior and strong magnetic anisotropy in extremely smooth (~1-3 Å) roughness) epitaxial (110) and (010) SrRuO3 thin films. The easy axis of magnetization is always perpendicular to the plane of the film (unidirectional) irrespective of crystallographic orientation. An attempt has been made to understand the nature and origin of spin-glass behavior,… ▽ More We report the observation of spin-glass-like behavior and strong magnetic anisotropy in extremely smooth (~1-3 Å) roughness) epitaxial (110) and (010) SrRuO3 thin films. The easy axis of magnetization is always perpendicular to the plane of the film (unidirectional) irrespective of crystallographic orientation. An attempt has been made to understand the nature and origin of spin-glass behavior, which fits well with Heisenberg model. △ Less

Submitted 2 September, 2009; v1 submitted 11 July, 2007; originally announced July 2007.

Comments: 5 pages, 5 Figures

Journal ref: Physical Review B, 79, 104413 (2009)

The structural and magnetic properties of (In1-xFex)2O3 (0.0 <= x <= 0.25) system : prepared by gel combustion method

Authors: O. D. Jayakumar, I. K. Gopalakrishnan, S. K. Kulshreshtha, Amita Gupta, K. V. Rao, D. Louzguine, Akihisa Inoue, P. Glans, **ghua Guo, Kousik Samanta, M. K. Singh, R. S. Katiyar

Abstract: (In1-xFex)2O3 polycrystalline samples with x = (0.0, 0.05, 0.10, 0.15, 0.20 and 0.25) have been synthesized by a gel combustion method. Reitveld refinement analysis of X raydiffraction data indicated the formation of single phase cubic bixbyite structure without any parasitic phases. This observation is further confirmed by high resolution transmission electron microscopy (HRTEM) imaging, and in… ▽ More (In1-xFex)2O3 polycrystalline samples with x = (0.0, 0.05, 0.10, 0.15, 0.20 and 0.25) have been synthesized by a gel combustion method. Reitveld refinement analysis of X raydiffraction data indicated the formation of single phase cubic bixbyite structure without any parasitic phases. This observation is further confirmed by high resolution transmission electron microscopy (HRTEM) imaging, and indexing of the selected-area electron diffraction (SAED) patterns, X-ray Absorption Spectroscopy (XAS) and Raman Spectroscopy. DC Magnetization studies as a function of temperature and field indicatethat they are ferromagnetic with Curie temperature (TC) well above room temperature. △ Less

Submitted 21 June, 2007; originally announced June 2007.

Comments: 9 pages 3 figures

Journal ref: Applied Physics Letters 91(23rd July 2007)

The beta Phase of Multiferroic Bismuth Ferrite and its beta-gamma Metal-Insulator Transition

Authors: R. Palai, R. S. Katiyar, H. Schmid, P. Tissot, S. J. Clark, J. Robertson, S. A. T. Redfern, J. F. Scott

Abstract: We show that epitaxial (001) thin films of multiferroic bismuth ferrite BiFeO3 are monoclinic at room temperature instead of tetragonal or Rhombohedral as reported earlier . We report a orthorhombic order-disorder beta-phase between 820C and 950C contrary to the earlier report. The transition sequence monoclinic-orthorhombic phase in (001)BiFeO3 thin film (rhombohedral-orthorhombic transition in… ▽ More We show that epitaxial (001) thin films of multiferroic bismuth ferrite BiFeO3 are monoclinic at room temperature instead of tetragonal or Rhombohedral as reported earlier . We report a orthorhombic order-disorder beta-phase between 820C and 950C contrary to the earlier report. The transition sequence monoclinic-orthorhombic phase in (001)BiFeO3 thin film (rhombohedral-orthorhombic transition in single crystal) resembles that of BaTiO3 or PbSc1/2Ta1/2O3. The transition to the cubic $γ$-phase causes an abrupt collapse of the bandgap toward zero (insulator-metal transition) at the orthorhombic-cubic beta-gamma transition around 950C. This transition is similar to the metal-insulator transition in Ba0.6K0.4BiO3. △ Less

Submitted 13 July, 2007; v1 submitted 20 May, 2007; originally announced May 2007.

Comments: 5 Pages, 5 grphs

Journal ref: Physical Review B, 77, 014110 (2008)

Behavior of Optical Phonons near the Diffuse Phase Transition in Relaxor Ferroelectric PbMg1/3Ta2/3O3

Authors: S. G. Lushnikov, S. N. Gvasaliya, R. S. Katiyar

Abstract: Raman scattering in relaxor ferroelectric PbMg1/3Ta2/3O3 (PMT) was investigated in the single crystalline form in the temperature range of 20 - 295 K. Anomalous temperature dependence of the integrated intensity and the Raman line contours were found at the diffuse phase transition. A correlation between the anomalies in the integrated intensities and the dispersion of the dielectric response wa… ▽ More Raman scattering in relaxor ferroelectric PbMg1/3Ta2/3O3 (PMT) was investigated in the single crystalline form in the temperature range of 20 - 295 K. Anomalous temperature dependence of the integrated intensity and the Raman line contours were found at the diffuse phase transition. A correlation between the anomalies in the integrated intensities and the dispersion of the dielectric response was observed. The distortions of Raman lines with decreasing temperature are discussed. △ Less

Submitted 8 September, 2004; originally announced September 2004.

Journal ref: Phys. Rev. B 70, 172101 (2004)

Lattice Dynamics in PMN

Authors: S. A. Prosandeev, E. Cockayne, B. P. Burton, S. Kamba, J. Petzelt, Yu. Yuzyuk, R. S. Katiyar, S. B. Vakhrushev

Abstract: Lattice dynamics for five ordered PMN supercells were calculated from first principles by the frozen phonon method. Maximal symmetries of all supercells are reduced by structural instabilities. Lattice modes corresponding to these instabilities, equilibrium ionic positions, and infrared reflectivity spectra were computed for all supercells. Results are compared with our experimental data for a c… ▽ More Lattice dynamics for five ordered PMN supercells were calculated from first principles by the frozen phonon method. Maximal symmetries of all supercells are reduced by structural instabilities. Lattice modes corresponding to these instabilities, equilibrium ionic positions, and infrared reflectivity spectra were computed for all supercells. Results are compared with our experimental data for a chemically disordered PMN single crystal. △ Less

Submitted 14 April, 2004; originally announced April 2004.

Comments: 10 pages, submitted to Physical Review B without detailes, which can be found in this preprint