Showing 1–50 of 62 results for author: Kar, S

Floquet Theory in an Irradiated Nodal Surface Semimetal

Authors: Bhaskar Pandit, Satyaki Kar

Abstract: A nodal surface semimetal (NSSM) features symmetry enforced band crossings along a surface within the three-dimensional (3D) Brillouin zone. The topological robustness of the same does not always come with nonzero Berry fluxes around nodal surfaces. Irrespective of that, however, light irradiation on such system can result in interesting dynamic behavior. We find that depending on the state of pol… ▽ More A nodal surface semimetal (NSSM) features symmetry enforced band crossings along a surface within the three-dimensional (3D) Brillouin zone. The topological robustness of the same does not always come with nonzero Berry fluxes around nodal surfaces. Irrespective of that, however, light irradiation on such system can result in interesting dynamic behavior. We find that depending on the state of polarization, one can obtain additional Weyl points/ nodal surfaces in the Floquet Hamiltonian that the time periodic system gives rise to. For simplicity we only consider two band spinless models without any spin orbit coupling, the main emphasis being to understand the low energy behavior close to the band crossings and its evolution in a Floquet system in the high frequency limit. There we find the nodal surfaces to perish or get duplicated or triplicated for different polarization scenario or different NSSM Hamiltonians. One findings open up important directions on what out of equilibrium NSSM systems has to offer in many active fields including quantum computations. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: Initial draft

Topology and $\mathcal{PT}$ Symmetry in a Non-Hermitian Su-Schrieffer-Heeger Chain with Periodic Hop** Modulation

Authors: Surajit Mandal, Satyaki Kar

Abstract: We study the effect of periodic hop** modulation on a Su-Schrieffer-Heeger (SSH) chain that exhibits non-Hermiticity in presence of an onsite staggered imaginary potential. This dissipative, non-Hermitian (NH) extension amply modifies the features of the topological trivial phase (TTP) and the topological nontrivial phase (TNP) of the SSH chain. Though a weak potential can respect the parity-tim… ▽ More We study the effect of periodic hop** modulation on a Su-Schrieffer-Heeger (SSH) chain that exhibits non-Hermiticity in presence of an onsite staggered imaginary potential. This dissipative, non-Hermitian (NH) extension amply modifies the features of the topological trivial phase (TTP) and the topological nontrivial phase (TNP) of the SSH chain. Though a weak potential can respect the parity-time ($\mathcal{PT}$) symmetry kee** the energy eigenvalues real, a strong potential breaks $\mathcal{PT}$ conservation leading to imaginary end state and complex bulk state energies in the system. Furthermore for large commensurate periodicity of the hop**, in-gap states appear that take either purely real or purely imaginary eigenvalues depending on the strenth of both NH potential and hop** modulation. In particular, this paper is engaged with hop** periodicities of 2, 4 and 8 lattice spacings. The localization of end states and in-gap states at the boundaries are investigated for those hop** periodicities. Though we find that topology and $\mathcal{PT}$ symmetry are not very directly connected, distinguishing distribution of $\mathcal{PT}$ broken and unbroken phases are clearly observed within TNP and TTP in our systems. △ Less

Submitted 7 May, 2024; originally announced May 2024.

Comments: First Draft

Review: Advanced characterization of the spatial variation of moiré heterostructures and moiré excitons

Authors: A. de la Torre, D. M. Kennes, E. Malic, S. Kar

Abstract: In this short review, we provide an overview of recent progress in deploying advanced characterization techniques to understand the effects of local inhomogeneities in moiré heterostructures over multiple length scales. Particular emphasis is placed on correlating the impact of twist angle misalignment, nano-scale disorder, and atomic relaxation on the moiré potential and its collective excitation… ▽ More In this short review, we provide an overview of recent progress in deploying advanced characterization techniques to understand the effects of local inhomogeneities in moiré heterostructures over multiple length scales. Particular emphasis is placed on correlating the impact of twist angle misalignment, nano-scale disorder, and atomic relaxation on the moiré potential and its collective excitations, particularly moiré excitons. Finally, we discuss future technological applications leveraging based on moié excitons. △ Less

Submitted 10 July, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Comments: Submitted to Small in response to an invitation for the special issue that celebrates the scientific accomplishments of Prof. P M Ajayan

Topological Solitons in Su-Schrieffer-Heeger Chain with periodic hop** modulation, domain walls and disorder

Authors: Surajit Mandal, Satyaki Kar

Abstract: A chiral symmetric Su-Schrieffer-Heeger (SSH) chain features topological end states in one of its dimerized configurations. Those mid-gap zero energy states show interesting modifications upon a periodic tuning of the hop** modulations. Besides, more and more in-gap end modes appear at nonzero energies for further partitioning of the Brillouin zone (BZ) due to increased hop** periodicity. The… ▽ More A chiral symmetric Su-Schrieffer-Heeger (SSH) chain features topological end states in one of its dimerized configurations. Those mid-gap zero energy states show interesting modifications upon a periodic tuning of the hop** modulations. Besides, more and more in-gap end modes appear at nonzero energies for further partitioning of the Brillouin zone (BZ) due to increased hop** periodicity. The new topological phases are identified with a detailed analysis of the topological invariants namely, winding number and Zak phases. The spectra and topology of these systems with periodically modulated hop** are studied also in the presence of a single static domain wall, separating two topologically inequivalent dimerized structures. The domain wall causes additional in-gap modes in the spectrum as well as zero energy domain wall solitonic states for specific hop** periodicities. We also study the effect of disorder, particularly the chirality breaking onsite ones, on the edge and domain wall states. Other than the SSH type we also consider random, Rice-Mele or AI type disorder to do a comparative analysis of the evolution of chirality and zero energy states as the strength of disorder and hop** periodicity is varied. Our findings can add important feedback in utilizing topological phases in various fields including quantum computations while the results can be easily verified in a cold atom set up within optical lattices. △ Less

Submitted 13 May, 2024; v1 submitted 2 February, 2024; originally announced February 2024.

Comments: 14 pages

Journal ref: PRB109, 195124 (2024)

Quantum Materials Group Annual Report 2022

Authors: P. Kumari, S. Rani, S. Kar, T. Mukherjee, S. Majumder, K. Kumari, S. J. Ray

Abstract: The Quantum Materials group at Indian Institute of Technology Patna is working on a range of topics relating to nanoelectronics, spintronics, clean energy and memory design etc. The PI has past experiences of working extensively with superconducting systems like cuprates [1, 2], ruthanate [3], pnictide [4, 5], thin film heterostructures [6, 7] etc and magnetic recording media [8, 9] etc. In this r… ▽ More The Quantum Materials group at Indian Institute of Technology Patna is working on a range of topics relating to nanoelectronics, spintronics, clean energy and memory design etc. The PI has past experiences of working extensively with superconducting systems like cuprates [1, 2], ruthanate [3], pnictide [4, 5], thin film heterostructures [6, 7] etc and magnetic recording media [8, 9] etc. In this report, we have summarised the ongoing works in our group. We explored a range of functional materials like two-dimensional materials, oxides. topological insulators, organic materials etc. using a combination of experimnetal and computational tools. Some of the useful highlights are as follows: (a) tuning and control of the magnetic and electronic state of 2D magentic materials with rapid enhancement in the Curie temperature, (b) Design and detection of single electron transistor based nanosensors for the detection of biological species with single molecular resolution, (c) Observation of non-volatile memory behaviour in the hybrid structures made of perovskite materials and 2D hybrids. The results offer useful insight in the design of nanoelectronic architecrures for diverse applications. △ Less

Submitted 13 October, 2023; v1 submitted 30 September, 2023; originally announced October 2023.

Edge state behavior in a Su-Schrieffer-Heeger like model with periodically modulated hop**

Authors: Satyaki Kar

Abstract: Su-Schrieffer-Heeger (SSH) model is one of the simplest models to show topological end/edge states and the existence of Majorana fermions. Here we consider a SSH like model both in one and two dimensions where a nearest neighbor hop** features spatially periodic modulations. In the 1D chain, we witness appearance of new in-gap end states apart from a pair of Majorana zero modes (MZM) when the ho… ▽ More Su-Schrieffer-Heeger (SSH) model is one of the simplest models to show topological end/edge states and the existence of Majorana fermions. Here we consider a SSH like model both in one and two dimensions where a nearest neighbor hop** features spatially periodic modulations. In the 1D chain, we witness appearance of new in-gap end states apart from a pair of Majorana zero modes (MZM) when the hop** periodicity go beyond two lattice spacings. The pair of MZMs, that appear in the topological regime, characterise the end modes each existing in either end of the chain. These, however, crossover to both-end end modes for small hop** modulation strength in a finite chain. Contrarily in a 2D SSH model with symmetric hop** that we consider, both non-zero and zero energy topological states appear in a finite square lattice even with a simple staggered hop**, though the zero energy modes disappear in a ribbon configuration. Apart from edge modes, the 2D system also features corner modes as well as modes with satellite peaks distributed non-randomly within the lattice. In both the dimensions, an increase in the periodicity of hop** modulation causes the zero energy Majorana modes to become available for either sign of the modulation. But interestingly with different periodicity for hop** modulations in the two directions, the zero energy modes in a 2D model become rarer and does not appear for all strength and sign of the modulation. △ Less

Submitted 6 November, 2023; v1 submitted 13 July, 2023; originally announced July 2023.

Comments: check the DOI for the published version

Journal ref: J. Phys.: Condens. Matter 36 065301 (2024)

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Authors: Vaishnavi Kateel, Viola Krizakova, Siddharth Rao, Kaiming Cai, Mohit Gupta, Maxwel Gama Monteiro, Farrukh Yasin, Bart Sorée, Johan De Boeck, Sebastien Couet, Pietro Gambardella, Gouri Sankar Kar, Kevin Garello

Abstract: Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications.… ▽ More Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by sha** the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for develo** purely current-driven SOT systems. △ Less

Submitted 6 May, 2023; originally announced May 2023.

Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications

Authors: Soumen Kar, Conan Weiland, Chenyu Zhou, Ekta Bhatia, Brian Martinick, Jakub Nalaskowski, John Mucci, Stephen Olson, Pui Yee Hung, Ilyssa Wells, Hunter Frost, Corbet S. Johnson, Thomas Murray, Vidya Kaushik, Sean Kirkpatrick, Kiet Chau, Michael J. Walsh, Mingzhao Liu, Satyavolu S. Papa Rao

Abstract: A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontr… ▽ More A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 22 pages, 7 figures, will be submitted to Superconductor Science and Technology Special Focus Issue Journal

Journal ref: Journal of Applied Physics, 134 (2), 2023

Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque

Authors: Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel, Siddharth Rao, Sebastien Couet, Gouri Sankar Kar, Kevin Garello, Pietro Gambardella

Abstract: Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dam**like component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assists the switching is a matter of debate. Here we study the switching of magnetic tunnel junctions with a CoFeB free layer and either W or Ta underlayer… ▽ More Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dam**like component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assists the switching is a matter of debate. Here we study the switching of magnetic tunnel junctions with a CoFeB free layer and either W or Ta underlayers, which have a ratio of fieldlike to dam**like torque of 0.3 and 1, respectively. We show that the fieldlike torque can either assist or hinder the switching of CoFeB when the static in-plane magnetic field required to define the polarity of spin-orbit torque switching has a component transverse to the current. In particular, the non-collinear alignment of the field and current can be exploited to increase the switching efficiency and reliability compared to the standard collinear alignment. By probing individual switching events in real-time, we also show that the combination of transverse magnetic field and fieldlike torque can accelerate or decelerate the reversal onset. We validate our observations using micromagnetic simulations and extrapolate the results to materials with different torque ratios. Finally, we propose device geometries that leverage the fieldlike torque for density increase in memory applications and synaptic weight generation. △ Less

Submitted 28 October, 2022; v1 submitted 29 June, 2022; originally announced June 2022.

Chiral anomaly induced magnetoconductances in an irradiated Type-I Weyl Semimetal

Authors: Rounak Sen, Satyaki Kar

Abstract: Magneto conductivities in Weyl semimetals (WSM) in presence of small fields are studied using quasi-classical Boltzmann transport equations (BTE). Following such formalism here we consider irradiation via circularly polarized light on a two-node time reversal breaking WSM already under a dc/static electric field and study the magneto-transport properties due to the presence of chiral anomaly. Chir… ▽ More Magneto conductivities in Weyl semimetals (WSM) in presence of small fields are studied using quasi-classical Boltzmann transport equations (BTE). Following such formalism here we consider irradiation via circularly polarized light on a two-node time reversal breaking WSM already under a dc/static electric field and study the magneto-transport properties due to the presence of chiral anomaly. Chiral anomaly affects both longitudinal magnetoconductivity as well as planar Hall conductivity. {As our field set-up causes continuous time variation in the relative orientation between the fields, one naturally expects interesting magneto-transport behavior for different field strengths and tilting.} The type-I tilting that we study here displays both positive and negative magnetoconductances depending on the field strengths and time. Furthermore, we find that a direct temporal tuning of the irradiated field strengths can {lead to fluctuating} magneto-transport behavior which can be easily improvised and checked in the laboratories. △ Less

Submitted 8 October, 2022; v1 submitted 8 June, 2022; originally announced June 2022.

Comments: 6 pages

Journal ref: J. Phys.: Condens. Matter 34 (2022) 465601

Fermi Level Fluctuations, Reduced Effective Masses and Zeeman Effect during Quantum Oscillations in Nodal Line Semimetals

Authors: Satyaki Kar, Anupam Saha

Abstract: We probe quantum oscillations in nodal line semimetals (NLSM) by considering a NLSM continuum model under strong magnetic field and report the characteristics of the Landau level spectra and the fluctuations in the Fermi level as the field in a direction perpendicular to the nodal plane is varied through. Based on the results on parallel magnetization, we demonstrate the growth of quantum oscillat… ▽ More We probe quantum oscillations in nodal line semimetals (NLSM) by considering a NLSM continuum model under strong magnetic field and report the characteristics of the Landau level spectra and the fluctuations in the Fermi level as the field in a direction perpendicular to the nodal plane is varied through. Based on the results on parallel magnetization, we demonstrate the growth of quantum oscillation with field strength as well as its constancy in period when plotted against 1/B. We find that the density of states which show series of peaks in succession, witness bifurcation of those peaks due to Zeeman effect. For field normal to nodal plane, such bifurcations are discernible only if the electron effective mass is considerably smaller than its free value, which usually happens in these systems. Though a reduced effective mass $m^*$ causes the Zeeman splitting to become small compared to Landau level spacing, experimental results indicate a manyfold increase in the Lande $g$ factor which again amplifies the Zeeman contribution. We also consider magnetic field in the nodal plane for which the density of state peaks do not repeat periodically with energy anymore. The spectra become more spread out and the Zeeman splittings become less prominent. We find the low energy topological regime, that appears with such in-plane field set up, to shrink further with reduced $m^*$ values. However, such topological regime can be stretched out in case there are smaller Fermi velocities for electrons in the direction normal to the nodal plane. △ Less

Submitted 1 October, 2021; v1 submitted 18 July, 2021; originally announced July 2021.

Comments: To appear in JPCM

Journal ref: J. Phys.: Condens. Matter 34 035601 (2022)

Interplay of voltage control of magnetic anisotropy, spin transfer torque, and heat in the spin-orbit torque switching in three-terminal magnetic tunnel junctions

Authors: Viola Krizakova, Eva Grimaldi, Kevin Garello, Giacomo Sala, Sebastien Couet, Gouri Sankar Kar, Pietro Gambardella

Abstract: We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the a… ▽ More We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the ability to switch the MTJ on the sub-ns time scale. By performing dc and real-time electrical measurements, we discriminate and quantify three effects arising from the MTJ bias: the voltage-controlled change of the perpendicular magnetic anisotropy, current-induced heating, and the spin transfer torque. The experimental results are supported by micromagnetic modeling. We observe that, depending on the pulse duration and the MTJ diameter, different effects take a lead in assisting the SOTs in the magnetization reversal process. Finally, we present a compact model that allows for evaluating the impact of each effect due to the MTJ bias on the critical switching parameters. Our results provide input to optimize the switching of three-terminal devices as a function of time, size, and material parameters. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Journal ref: Physical Review Applied 15, 054055 (2021)

Spin-torque induced wall motion in perpendicularly magnetized discs: ballistic versus oscillatory behavior

Authors: Paul Bouquin, Joo-Von Kim, Olivier Bultynck, Siddharth Rao, Sebastien Couet, Gouri Sankar Kar, Thibaut Devolder

Abstract: We use time-resolved measurement and modeling to study the spin-torque induced motion of a domain wall in perpendicular anisotropy magnets. In disc of diameters between 70 and 100 nm, the wall drifts across the disc with pronounced back-and-forth oscillations that arise because the wall moves in the Walker regime. Several switching paths occur stochastically and lead to distinct switching duration… ▽ More We use time-resolved measurement and modeling to study the spin-torque induced motion of a domain wall in perpendicular anisotropy magnets. In disc of diameters between 70 and 100 nm, the wall drifts across the disc with pronounced back-and-forth oscillations that arise because the wall moves in the Walker regime. Several switching paths occur stochastically and lead to distinct switching durations. The wall can cross the disc center either in a ballistic manner or with variably marked oscillations before and after the crossing. The crossing of the center can even occur multiple times if a vertical Bloch line nucleates within the wall. The wall motion is analyzed using a collective coordinate model parametrized by the wall position $q$ and the tilt $φ$ of its in-plane magnetization projection. The dynamics results from the stretch field, which describes the affinity of the wall to reduce its length and the wall stiffness field describing the wall tendency to reduce dipolar energy by rotating its tilt. The wall oscillations result from the continuous exchange of energy between to the two degrees of freedom $q$ and $φ$. The stochasticity of the wall dynamics can be understood from the concept of the retention pond: a region in the $q-φ$ space in which walls are transiently bound to the disc center. Walls having trajectories close to the pond must circumvent it and therefore have longer propagation times. The retention pond disappears for a disc diameter of typically 40 nm: the wall then moves in a ballistic manner irrespective of the dynamics of its tilt. The propagation time is then robust against fluctuations hence reproducible. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Comments: submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 103, 224431 (2021)

Dynamic Spin Fluctuations in the Frustrated Spin Chain Compound Li$_3$Cu$_2$SbO$_6$

Authors: A. Bhattacharyya, T. K. Bhowmik, D. T. Adroja, B. Rahaman, S. Kar, S. Das, T. Saha-Dasgupta, P. K. Biswas, T. P. Sinha, R. A. Ewings, D. D. Khalyavin, A. M. Strydom

Abstract: We report the signatures of dynamic spin fluctuations in the layered honeycomb Li$_3$Cu$_2$SbO$_6$ compound, with a 3$d$ S = 1/2 $d^9$ Cu$^{2+}$ configuration, through muon spin rotation and relaxation ($μ$SR) and neutron scattering studies. Our zero-field (ZF) and longitudinal-field (LF)-$μ$SR results demonstrate the slowing down of the Cu$^{2+}$ spin fluctuations below 4.0 K. The saturation of t… ▽ More We report the signatures of dynamic spin fluctuations in the layered honeycomb Li$_3$Cu$_2$SbO$_6$ compound, with a 3$d$ S = 1/2 $d^9$ Cu$^{2+}$ configuration, through muon spin rotation and relaxation ($μ$SR) and neutron scattering studies. Our zero-field (ZF) and longitudinal-field (LF)-$μ$SR results demonstrate the slowing down of the Cu$^{2+}$ spin fluctuations below 4.0 K. The saturation of the ZF relaxation rate at low temperature, together with its weak dependence on the longitudinal field between 0 and 3.2 kG, indicates the presence of dynamic spin fluctuations persisting even at 80 mK without static order. Neutron scattering study reveals the gaped magnetic excitations with three modes at 7.7, 13.5 and 33 meV. Our DFT calculations reveal that the next nearest neighbors (NNN) AFM exchange ($J_{AFM}$ = 31 meV) is stronger than the NN FM exchange ($J_{FM}$ = -21 meV) indicating the importance of the orbital degrees of freedom. Our results suggest that the physics of Li$_3$Cu$_2$SbO$_6$ can be explained by an alternating AFM chain rather than the honeycomb lattice. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 103, 174423 (2021)

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

Authors: Y. C. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K. K. Vudya Sethu, F. Yasin, D. Crotti, G. S. Kar

Abstract: Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propo… ▽ More Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient (ξ) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pure electronic VCMA effect, ξ is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devices used in this study. Further, the device-scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes. △ Less

Submitted 19 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Applied 15, 064015 (2021)

Second- and third-order optical susceptibilities in bidimensional semiconductors near excitons states

Authors: Lucas Lafeta, Aurea Corradi, Tianyi Zhang, Ethan Kahn, Ismail Bilgin, Bruno R. Carvalho, Swastik Kar, Mauricio Terrones, Leandro M. Malard

Abstract: Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixing (FWM) spectroscopy in resonance with the excitons in MoS2, MoSe2, and WS2 monolayers to characterize the nonlinear optical properties of these materials. We show that trions and excitons are responsible for enhancing… ▽ More Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixing (FWM) spectroscopy in resonance with the excitons in MoS2, MoSe2, and WS2 monolayers to characterize the nonlinear optical properties of these materials. We show that trions and excitons are responsible for enhancing the nonlinear optical response, and determine the exciton and trion energies by comparing with the photoluminescence spectra. Moreover, we extract the second and third order optical sheet susceptibility near exciton energies and compare with values found in the literature. We also demonstrate the ability to generate different nonlinear effects in a wide spectral range in the visible region for monolayer MoS2, opening the possibility of using two-dimensional materials for nonlinear optoelectronic and photonic applications. △ Less

Submitted 25 January, 2021; originally announced January 2021.

Comments: 8 pages, 4 figures

Journal ref: 2D Mater. 8 035010 (2021)

Twistronics: A turning point in 2D quantum materials

Authors: Zachariah Hennighausen, Swastik Kar

Abstract: Moiré superlattices - periodic orbital overlaps and lattice-reconstruction between sites of high atomic registry in vertically-stacked 2D layered materials - are quantum-active interfaces where non-trivial quantum phases on novel phenomena can emerge from geometric arrangements of 2D materials, which are not intrinsic to the parent materials. Unexpected distortions in band-structure and topology l… ▽ More Moiré superlattices - periodic orbital overlaps and lattice-reconstruction between sites of high atomic registry in vertically-stacked 2D layered materials - are quantum-active interfaces where non-trivial quantum phases on novel phenomena can emerge from geometric arrangements of 2D materials, which are not intrinsic to the parent materials. Unexpected distortions in band-structure and topology lead to long-range correlations, charge-ordering, and several other fascinating quantum phenomena hidden within the physical space between the (similar or dissimilar) parent materials. Stacking, twisting, gate-modulating, and optically-exciting these superlattices open up a new field for seamlessly exploring physics from the weak to strong correlations limit within a many-body and topological framework. It is impossible to capture it all, and the aim of this review is to highlight some of the important recent developments in synthesis, experiments, and potential applications of these materials. △ Less

Submitted 12 January, 2021; originally announced January 2021.

Journal ref: IOP Electronic Structure, 2021

Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions

Authors: Eva Grimaldi, Viola Krizakova, Giacomo Sala, Farrukh Yasin, Sébastien Couet, Gouri Sankar Kar, Kevin Garello, Pietro Gambardella

Abstract: Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetiza… ▽ More Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Journal ref: Nature Nanotechnology 15, 111-117 (2020)

2D-MoS2 with Narrowest Excitonic Linewidths Grown by Flow-Less Direct Heating of Bulk Powders

Authors: Davoud Hejazi, Renda Tan, Neda Kari Rezapour, Mehrnaz Mojtabavi, Meni Wanunu, Swastik Kar

Abstract: Develo** techniques for high-quality synthesis of mono and few-layered 2D materials with lowered complexity and cost continues to remain an important goal, both for accelerating fundamental research and for applications development. We present the simplest conceivable technique to synthesize micrometer-scale single-crystal triangular monolayers of MoS2, i.e. by direct heating of bulk MoS2 powder… ▽ More Develo** techniques for high-quality synthesis of mono and few-layered 2D materials with lowered complexity and cost continues to remain an important goal, both for accelerating fundamental research and for applications development. We present the simplest conceivable technique to synthesize micrometer-scale single-crystal triangular monolayers of MoS2, i.e. by direct heating of bulk MoS2 powder onto proximally-placed substrates. Room-temperature excitonic linewidth values of our samples are narrower and more uniform than those of 2D-MoS2 obtained by most other techniques reported in literature, and comparable to those of ultraflat h-BN-capped mechanically exfoliated samples, indicative of their high quality. Feature-rich Raman spectra absent in samples grown or obtained by most other techniques, also stand out as a testament of the high quality of our samples. A contact-growth mode facilitates direct growth of crystallographically-strained circular samples, which allows us to directly compare the optoelectronic properties of flat vs. strained growth from the same growth runs. Our method allows, for the first time, to quantitatively compare the impact of strain on excitonic and Raman peak positions on identically-synthesized 2D-MoS2. Strain leads to average Red-shifts of ~ 30 meV in the A-exciton position, and ~ 2 cm-1 in the E12g Raman peak in these samples. Our findings open-up several new possibilities that expand 2D material research. By eliminating the need for carrier gas flow, mechanical motion or chemical reactions, our method can be either miniaturized for substantially low-cost, high-quality scientific research or potentially scaled-up for mass-production of 2D crystals for commercial purposes. Moreover, we believe this technique can also be extended to other transition metal dichalcogenides and other layered materials. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Stochastic processes in magnetization reversal involving domain wall motion in magnetic memory elements

Authors: Paul Bouquin, Joo-Von Kim, Olivier Bultynck, Siddharth Rao, Sebastien Couet, Gouri Sankar Kar, Thibaut Devolder

Abstract: We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dominated by two distinct stochastic effects. The first involves the incubation time related to domain wall nucleation, while the second results from stochastic motion in the Walker regime. Micromagnetics simulations reveal… ▽ More We show experimentally through time-resolved conductance measurements that magnetization reversal through domain wall motion in sub-100 nm diameter magnetic tunnel junctions is dominated by two distinct stochastic effects. The first involves the incubation time related to domain wall nucleation, while the second results from stochastic motion in the Walker regime. Micromagnetics simulations reveal several contributions to temporal pinning of the wall near the disk center, including Bloch point nucleation and wall precession. We show that a reproducible ballistic motion is recovered when Bloch and Néel wall profiles become degenerate in energy in optimally sized disks, which enables quasi-deterministic motion. △ Less

Submitted 16 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 15, 024037 (2021)

Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales

Authors: Viola Krizakova, Kevin Garello, Eva Grimaldi, Gouri Sankar Kar, Pietro Gambardella

Abstract: We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measure… ▽ More We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Journal ref: Appl. Phys. Lett. 116, 232406 (2020)

Back-hop** in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions

Authors: T. Devolder, O. Bultynck, P. Bouquin, V. D. Nguyen, S. Rao, D. Wan, B. Sorée, I. P. Radu, G. S. Kar, S. Couet

Abstract: We analyse the phenomenon of back-hop** in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back-hop**. Studying several material variants reveals that the back-hop** is a feature of the nominally fixed system of the tunnel junction. The back-hopp… ▽ More We analyse the phenomenon of back-hop** in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back-hop**. Studying several material variants reveals that the back-hop** is a feature of the nominally fixed system of the tunnel junction. The back-hop** is found to proceed by two sequential switching events that lead to a final state P' of conductance close to --but distinct from-- that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers. The analysis of literature indicates that back-hop** occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system, which justifies a posteriori the mitigation strategies of back-hop** that were implemented empirically in spin-transfer-torque magnetic random access memories. △ Less

Submitted 9 June, 2020; originally announced June 2020.

Comments: submitted to Phys Rev. B

Quantum Oscillation and Landau-Zener transition in Untilted Nodal line semimetals under a time-periodic magnetic field

Authors: Satyaki Kar

Abstract: Nodal line semimetals (NLSM) exhibit interesting quantum oscillation characteristics when acted upon by a strong magnetic field. We study the combined effect of strong direct (dc) and alternating (ac) magnetic field, perpendicular to the nodal plane in an untilted NLSM in order to probe the behavior of the low lying Landau level (LL) states that can periodically become gapless for suitably chosen… ▽ More Nodal line semimetals (NLSM) exhibit interesting quantum oscillation characteristics when acted upon by a strong magnetic field. We study the combined effect of strong direct (dc) and alternating (ac) magnetic field, perpendicular to the nodal plane in an untilted NLSM in order to probe the behavior of the low lying Landau level (LL) states that can periodically become gapless for suitably chosen field parameters. The oscillatory field variation, as opposed to a steady one, has interesting impact on the quantum oscillation phenomena with the Landau tubes crossing the Fermi surface extremally two times per cycle. Furthermore, the low energy modes can witness Landau-Zener like transitions between valence and conduction band providing further routes to conduction. We discuss such transition phenomena following the framework of adiabatic-impulse approximation for slow quenches. Next we also investigate the effect of oscillating magnetic field acting parallel to the nodal loop where topologically nontrivial magnetic oscillations at low energies can be witnessed. Therefore, with proper parameters chosen, one can engineer topological transitions to occur periodically in such systems as the oscillating field is swept through its cycles. △ Less

Submitted 24 February, 2021; v1 submitted 1 June, 2020; originally announced June 2020.

Comments: To appear in JPCM

Journal ref: J. Phys.: Condens. Matter 33 225601 (2021)

Liquid-phase reinforced Metal matrix (LMM) composite with non-intuitive properties

Authors: Varinder Pal, Rakesh Das, Rushikesh Ambekhar, Avinash Kumar, Jitesh Vasavada, Banty Kumar, Sujoy Kumar Kar, Suman Sarkar, Mithun Palit, Ajit K. Roy, Manas Paliwal, Krishanu Biswas, Sanjit Bhoumik, Sushil Mishra, Chirodeep Bakli, Chandra Shekhar Tiwary

Abstract: Over the ages, efforts have been made to use composite design to reinforce metals and alloys in order to increase their strength and modulus. On the other hand, nature herself improves the strength, ductility, stiffness and toughness of materials by strengthening them with liquids having zero strength/modulus. Here, emulating nature, efforts have been made to develop a new class of tin based alloy… ▽ More Over the ages, efforts have been made to use composite design to reinforce metals and alloys in order to increase their strength and modulus. On the other hand, nature herself improves the strength, ductility, stiffness and toughness of materials by strengthening them with liquids having zero strength/modulus. Here, emulating nature, efforts have been made to develop a new class of tin based alloy/composite with liquid metal reinforcement (LMM). Based on thermodynamic calculations, a composition has been designed such that on melting and casting it forms a solid metal (tin solid solution) and the eutectic mixture remains in liquid form at room temperature. The composite structure named as LMM shows multifold improvement in hardness, strength, ductility, toughness and wear resistance as compared to conventional solder alloys. A Finite Element Method (FEM) based simulation shows strain distribution in the composite which results in the unique behavior. The LMM also shows a negative coefficient of thermal expansion which is further verified using in-situ microscopy and thermodynamic calculations. △ Less

Submitted 8 February, 2020; originally announced February 2020.

Effect of Tantalum spacer thickness and deposition conditions on the properties of MgO/CoFeB/Ta/CoFeB/MgO free layers

Authors: T. Devolder, S. Couet, J. Swerts, S. Mertens, S. Rao, G. S. Kar

Abstract: To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness is typically ensured by the insertion of a spacer layer of the early transition metal series within the FeCoB layer. We study the influence of the spa… ▽ More To get stable perpendicularly magnetized tunnel junctions at small device dimensions, composite free layers that comprise two MgO/FeCoB interfaces as sources of interface anisotropy are generally used. Proper cristallisation and annealing robustness is typically ensured by the insertion of a spacer layer of the early transition metal series within the FeCoB layer. We study the influence of the spacer thickness and growth condition on the switching metrics of tunnel junctions thermally annealed at 400$^\circ$C for the case of 1-4 Å Ta spacers. Thick Ta spacer results in a large anisotropies indicative of a better defined top FeCoB/MgO interface, but this is achieved at the systematic expense of a stronger dam**. For the best anisotropy-dam** compromise, junctions of diameter 22 nm can still be stable and spin-torque switched. Coercivity and inhomogeneous linewidth broadening, likely arising from roughness at the FeCoB/Ta interface, can be reduced if a sacrificial Mg layer is inserted before the Ta spacer deposition. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Comments: To appear in IEEE magnetics letters

Absorption and emission modulation in MoS2-GaN (0001) heterostructure by interface phonon-exciton coupling

Authors: Yuba Poudel, Jagoda Slawinska, Priya Gopal, Sairaman Seetharaman, Zachariah Hennighausen, Swastik Kar, Francis Dsouza, Marco Buongiorno Nardelli, Arup Neogi

Abstract: Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface properties of the polar semiconductor, such as GaN are dominated by interface phonons, thus the optical properties of the vertical heterostructure depend strongly on t… ▽ More Semiconductor heterostructures based on layered two-dimensional transition metal dichalcogenides (TMD) interfaced to gallium nitride (GaN) are excellent material systems to realize broadband light emitters and absorbers. The surface properties of the polar semiconductor, such as GaN are dominated by interface phonons, thus the optical properties of the vertical heterostructure depend strongly on the interface exciton-phonon coupling. The origin and activation of different Raman modes in the heterostructure due to coupling between interfacial phonons and optically generated carriers in a monolayer MoS2-GaN (0001) heterostructure was observed. This coupling strongly influences the non-equilibrium absorption properties of MoS2 and the emission properties of both semiconductors. Density functional theory (DFT) calculations were performed to study the band alignment of the interface, which revealed a type-I heterostructure. The optical excitation with interband transition in MoS2 at K-point strongly modulates the C excitonic band in MoS2. The overlap of absorption and emission bands of GaN with the absorption bands of MoS2 induces the energy and charge transfer across the interface with an optical excitation at Γ-point. A strong modulation of the excitonic absorption states is observed in MoS2 on GaN substrate with transient optical pump-probe spectroscopy. The interaction of carriers with phonons and defect states leads to the enhanced and blue shifted emission in MoS2 on GaN substrate. Our results demonstrate the relevance of interface coupling between phonons and carriers for the development of optical and electronic applications. △ Less

Submitted 10 June, 2019; originally announced June 2019.

Semiconductor to metal transition for Ni doped CdO thin films

Authors: Arkaprava Das, Ashish Kumar, Vijay Soni, Soumen Kar

Abstract: In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers… ▽ More In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers. The semiconductor to metal transition (SMT) for NDO thin films has been elucidated via combined effect of involved grain boundaries, ionic impurities, phonon scattering and carrier activation. △ Less

Submitted 26 April, 2019; originally announced April 2019.

Comments: 4 pages, 1 fugure, 1 table, Accepted in Springer conference proceeding

Offset fields in perpendicularly magnetized tunnel junctions

Authors: T. Devolder, R. Carpenter, S. Rao, W. Kim, S. Couet, J. Swerts, G. S. Kar

Abstract: We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on… ▽ More We study the offset fields affecting the free layer of perpendicularly magnetized tunnel junctions. In extended films, the free layer offset field results from interlayer exchange coupling with the reference layer through the MgO tunnel oxide. The free layer offset field is thus accompanied with a shift of the free layer and reference layer ferromagnetic resonance frequencies. The shifts depend on the mutual orientation of the two magnetizations. The offset field decreases with the resistance area product of the tunnel oxide. Patterning the tunnel junction into an STT-MRAM disk-shaped cell changes substantially the offset field, as the reduction of the lateral dimension comes with the generation of stray fields by the reference and the hard layer. The experimental offset field compares best with the spatial average of the sum of these stray fields, thereby providing guidelines for the offset field engineering. △ Less

Submitted 23 April, 2019; originally announced April 2019.

Comments: Special issue of J. Phys. D: Appl. Phys (2019) on STT-MRAM

Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides

Authors: Bruno R. Carvalho, Yuanxi Wang, Kazunori Fujisawa, Tianyi Zhang, Ethan Kahn, Ismail Bilgin, Pulickel M. Ajayan, Ana M. de Paula, Marcos A. Pimenta, Swastik Kar, Vincent H. Crespi, Mauricio Terrones, Leandro M. Malard

Abstract: Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D de… ▽ More Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly damaging since they directly impede the transport of charge, spin or heat, and can introduce a metallic character into otherwise semiconducting systems. Unfortunately, a technique to rapidly and non-destructively image 1D defects in 2D materials is lacking. Scanning transmission electron microscopy (STEM), Raman, photoluminescence and nonlinear optical spectroscopies, are all extremely valuable, but current implementations suffer from low throughput and a destructive nature (STEM) or limitations in their unambiguous sensitivity at the nanoscale. Here we demonstrate that dark-field second harmonic generation (SHG) microscopy can rapidly, efficiently, and non-destructively probe grain boundaries and edges in monolayer dichalcogenides (i.e. MoSe2, MoS2 and WS2). Dark-field SHG efficiently separates the spatial components of the emitted light and exploits interference effects from crystal domains of different orientations to localize grain boundaries and edges as very bright 1D patterns through a Cerenkov-type SHG emission. The frequency dependence of this emission in MoSe2 monolayers is explained in terms of plasmon-enhanced SHG related to the defects metallic character. This new technique for nanometer-scale imaging of the grain structure, domain orientation and localized 1D plasmons in 2D different semiconductors, thus enables more rapid progress towards both applications and fundamental materials discoveries. △ Less

Submitted 12 March, 2019; originally announced March 2019.

Comments: 15 pages, 5 figures

Journal ref: Nano Lett. 2020, 20, 1, 284-291

Mixed-order transition and tricritical point associated with checkerboard supersolidity in the two-dimensional $t_2-V_1$ model

Authors: Amrita Ghosh, Satyaki Kar, Sudhakar Yarlagadda

Abstract: We use Quantum Monte Carlo method employing stochastic-series-expansion technique to study the ground state properties of the $t_2-V_1$ model on a square lattice. We find that, away from half-fillings, the minimal combination of nearest-neighbor repulsion $V_1$ and next-nearest-neighbor hop** $t_2$ may give rise to checkerboard supersolidity. The nature of the quantum phase transition, where the… ▽ More We use Quantum Monte Carlo method employing stochastic-series-expansion technique to study the ground state properties of the $t_2-V_1$ model on a square lattice. We find that, away from half-fillings, the minimal combination of nearest-neighbor repulsion $V_1$ and next-nearest-neighbor hop** $t_2$ may give rise to checkerboard supersolidity. The nature of the quantum phase transition, where the superfluid changes to a checkerboard supersolid, depends on the relative strength of $V_1/t_2$ and the average site occupancy. Interestingly, the model exhibits a mixed-order transition near half filling; at a higher (lower) filling, tricriticality is witnessed followed by a second-order transition at densities even further away from half filling. Close to half filling, the model displays the extreme Thouless effect and transits from a superfluid to a checkerboard solid. △ Less

Submitted 26 February, 2019; originally announced February 2019.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 101, 035147 (2020)

Magnon excitations in $Cs_2CuAl_4O_8$ - a bond alternating S=1/2 spin chain with next nearest neighbor coupling

Authors: Satyaki Kar

Abstract: A recent density functional theory (DFT) based analysis, complemented with Quantum Monte Carlo calculations revealed a highly spin-frustrating nature of the one-dimensional spin-$\frac{1}{2}$ compound $Cs_2CuAl_4O_8$ that comprises of unique bond alternations and relatively strong next nearest neighbor interactions. This article gives a brief account on possible magnon excitations that can appear… ▽ More A recent density functional theory (DFT) based analysis, complemented with Quantum Monte Carlo calculations revealed a highly spin-frustrating nature of the one-dimensional spin-$\frac{1}{2}$ compound $Cs_2CuAl_4O_8$ that comprises of unique bond alternations and relatively strong next nearest neighbor interactions. This article gives a brief account on possible magnon excitations that can appear in the ground state of such systems. We find that the spin waves obtained on top of coplanar helical reference states show multiple magnon modes (both acoustic and optical). However, those magnon modes turn out to be stable only in the absence of bond alternations. △ Less

Submitted 11 February, 2019; originally announced February 2019.

Comments: An attempt for finding magnon modes in bond alternating spin chain with next nearest neighbor spin interactions

A Primer on Weyl Semimetals: Down the Discovery of Topological Phases

Authors: Satyaki Kar, Arun M Jayannavar

Abstract: Recently discovered Weyl semimetals (WSM) have found special place in topological condensed matter studies for they represent first example of massless Weyl fermions found in condensed matter systems. A WSM shows gapless bulk energy spectra with Dirac-like point degeneracies, famously called Weyl nodes, which carry with themselves well defined chiralities and topologically protected chiral charges… ▽ More Recently discovered Weyl semimetals (WSM) have found special place in topological condensed matter studies for they represent first example of massless Weyl fermions found in condensed matter systems. A WSM shows gapless bulk energy spectra with Dirac-like point degeneracies, famously called Weyl nodes, which carry with themselves well defined chiralities and topologically protected chiral charges. One finds the Berry curvature of the Bloch bands to become singular, like in a magnetic monopole, at these Weyl nodes. Moreover, these systems feature topological surface states in the form of open Fermi arcs. In this review, we undergo a concise journey from graphene based Dirac physics to Weyl semimetals: the underlying Hamiltonians, their basic features and their unique response to external electric and magnetic fields in order to provide a basic walk-through of how the Weyl physics unfolded with time starting from the discovery of Graphene. △ Less

Submitted 24 August, 2020; v1 submitted 5 February, 2019; originally announced February 2019.

Comments: A brief primer on Weyl Semimetals

Journal ref: Asian Journal of Research and Reviews in Physics, 4(1), 34-45 (2021)

Controlled Electrokinetic Particle Manipulation using Paper-and-Pencil Microfluidics

Authors: Sankha Shuvra Das, Shantimoy Kar, Sayantan Dawn, Partha Saha, Suman Chakraborty

Abstract: Dielectrophoresis is a very promising technique for particle manipulation on a chip. In this study, we demonstrate a controlled mannuvering of polystryrene particles on a simple paper-and-pencil based device by exploiting the underlying electrokinetics with primary contribution from dielectrophoretic (DEP) forces. On contrary to other reported DEP devices, the present configuration does not demand… ▽ More Dielectrophoresis is a very promising technique for particle manipulation on a chip. In this study, we demonstrate a controlled mannuvering of polystryrene particles on a simple paper-and-pencil based device by exploiting the underlying electrokinetics with primary contribution from dielectrophoretic (DEP) forces. On contrary to other reported DEP devices, the present configuration does not demand a shophitcated laboratory module for creating a non-uniform electric field, which is essential requirement in DEP settings. We demonstrate positive dielectrophoresis (pDEP) to trap 1 um size polystyrene particle for low-conductivity suspending medium, at an applied field strength of 100 V/cm. In addition, the switching of the trap** direction (positive to negative dielectrophoresis) can be simply achieved by manipulating the conductivity of the media. We further bring out an optimum range of pH for effective particle trap**. These results have significant implications towards designing cell-on-a-chip based point of care diagnostic devices for resource limited settings. △ Less

Submitted 30 November, 2018; originally announced January 2019.

Comments: 21 pages

Journal ref: PHYS. REV. APPLIED 12, 054017 (2019)

Oxygen-induced in-situ manipulation of the interlayer coupling and exciton recombination in Bi2Se3/MoS2 2D heterostructures

Authors: Zachariah Hennighausen, Christopher Lane, Abdelkrim Benabbas, Kevin Mendez, Monika Eggenberger, Paul M. Champion, Jeremy T. Robinson, Arun Bansil, Swastik Kar

Abstract: 2D heterostructures are more than a sum of the parent 2D materials, but are also a product of the interlayer coupling, which can induce new properties. In this paper we present a method to tune the interlayer coupling in Bi2Se3/MoS2 2D heterostructures by regulating the oxygen presence in the atmosphere, while applying laser or thermal energy. Our data suggests the interlayer coupling is tuned thr… ▽ More 2D heterostructures are more than a sum of the parent 2D materials, but are also a product of the interlayer coupling, which can induce new properties. In this paper we present a method to tune the interlayer coupling in Bi2Se3/MoS2 2D heterostructures by regulating the oxygen presence in the atmosphere, while applying laser or thermal energy. Our data suggests the interlayer coupling is tuned through the diffusive intercalation and de-intercalation of oxygen molecules. When one layer of Bi2Se3 is grown on monolayer MoS2, an influential interlayer coupling is formed that quenches the signature photoluminescence (PL) peaks. However, thermally annealing in the presence of oxygen disrupts the interlayer coupling, facilitating the emergence of the MoS2 PL peak. DFT calculations predict intercalated oxygen increases the interlayer separation ~17%, disrupting the interlayer coupling and inducing the layers to behave more electronically independent. The interlayer coupling can then be restored by thermally annealing in N2 or Ar, where the peaks will re-quench. Hence, this is an interesting oxygen-induced switching between "non-radiative" and "radiative" exciton recombination. This switching can also be accomplished locally, controllably, and reversibly using a low-power focused laser, while changing the environment from pure N2 to air. This allows for the interlayer coupling to be precisely manipulated with submicron spatial resolution, facilitating site-programmable 2D light-emitting pixels whose emission intensity could be precisely varied by a factor exceeding 200x. Our results show that these atomically-thin 2D heterostructures may be excellent candidates for oxygen sensing. △ Less

Submitted 4 January, 2019; originally announced January 2019.

Journal ref: ACS Appl. Mater. Interfaces 2019 111715913-15921

SOT-MRAM 300mm integration for low power and ultrafast embedded memories

Authors: K. Garello, F. Yasin, S. Couet, L. Souriau, J. Swerts, S. Rao, S. Van Beek, W. Kim, E. Liu, S. Kundu, D. Tsvetanova, N. Jossart, K. Croes, E. Grimaldi, M. Baumgartner, D. Crotti, A. Furnémont, P. Gambardella, G. S. Kar

Abstract: We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ. We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ. △ Less

Submitted 22 October, 2018; originally announced October 2018.

Comments: presented at VLSI2018 session C8-2

Journal ref: 2018 IEEE Symposium on VLSI Circuits

Active control of coherent dynamics in hybrid plasmonic MoS2 monolayers with dressed phonons

Authors: Yuba Poudel, Gary N. Lim, Mojtaba Moazzezi, Zachariah Hennighausen, Yuri Rostovtsev, Francis DSouza, Swastik Kar, Arup Neogi

Abstract: The near-field interaction due to a strong electromagnetic field induced by resonant localized plasmons can result in a strong coupling of excitonic states or formation of hybrid exciton-plasmon modes in quantum confined structures. This coupling can be strengthed by designing a system with its vibronic states resonant to the energy of the driving field induced by the localized plasmon excitation.… ▽ More The near-field interaction due to a strong electromagnetic field induced by resonant localized plasmons can result in a strong coupling of excitonic states or formation of hybrid exciton-plasmon modes in quantum confined structures. This coupling can be strengthed by designing a system with its vibronic states resonant to the energy of the driving field induced by the localized plasmon excitation. Silver nanoislands nucleated on molybdenum disulfide (MoS2) is an ideal platform for such interaction. The influence of localized plasmons (LSP) on the formation and dissociation of excitons due to resonant and off-resonant optical excitation of carriers to excitonic states is studied using ultrafast optical spectroscopy. The local field due to the Ag nanoparticles (Ag-NP) enhances the magnitude of the Raman modes in MoS2 in the presence of resonant excitation. An ultrashort pulsed optical excitation at 2.3 eV resonantly excites the LSP modes and the optical near-field resonantly drive the phonon modes, which leads to a coherent coupling of the A and B excitons in MoS2 with the plasmon modes. The resonant excitation of the LSP modes modulate the optical absorption of the probe field. The resonant excitation of C exciton due to an excitation source at 3.0 eV, which is off-resonant to the LSP mode increases the electrostatic screening in the presence of excess carriers from Ag NPs. It results in a faster dissociation of optically generated C excitons into free carriers that eventually increase the A and B exciton population. A 3-level density matrix theory in the presence of dressed vibronic states induced by a localized near-field optical driving source is applied to describe the coherent interaction process in the hybrid nano-plasmonic system. △ Less

Submitted 29 March, 2019; v1 submitted 4 October, 2018; originally announced October 2018.

Comments: 19 pages, 10 figures, 51 references

Journal ref: ACS Photonics, 2019

Size dependence of spin-torque switching in perpendicular magnetic tunnel junctions

Authors: Paul Bouquin, Siddharth Rao, Gouri Sankar Kar, Thibaut Devolder

Abstract: We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger disks. We derive the critical diameter of this transition. Using a proper definition of the critical voltage, a macrospin model can account perfectly for the r… ▽ More We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger disks. We derive the critical diameter of this transition. Using a proper definition of the critical voltage, a macrospin model can account perfectly for the reversal dynamics when the reversal is coherent. The same critical voltage appears to match with the micromagnetics switching voltage regardless of the switching path. △ Less

Submitted 15 November, 2018; v1 submitted 10 September, 2018; originally announced September 2018.

Journal ref: Appl. Phys. Lett. 113, 222408 (2018)

A Roadmap for Electronic Grade 2-Dimensional Materials

Authors: Natalie Briggs, Shruti Subramanian, Zhong Lin, Xufan Li, Xiaotian Zhang, Kehao Zhang, Kai Xiao, David Geohegan, Robert Wallace, Long-Qing Chen, Mauricio Terrones, Aida Ebrahimi, Saptarshi Das, Joan Redwing, Christopher Hinkle, Kasra Momeni, Adri van Duin, Vin Crespi, Swastik Kar, Joshua A. Robinson

Abstract: Two dimensional (2D) materials continue to hold great promise for future electronics, due to their atomic-scale thicknesses and wide range of tunable properties. However, commercial efforts in this field are relatively recent, and much progress is required to fully realize 2D materials for commercial success. Here, we present a roadmap for the realization of electronic-grade 2D materials. We discu… ▽ More Two dimensional (2D) materials continue to hold great promise for future electronics, due to their atomic-scale thicknesses and wide range of tunable properties. However, commercial efforts in this field are relatively recent, and much progress is required to fully realize 2D materials for commercial success. Here, we present a roadmap for the realization of electronic-grade 2D materials. We discuss technology drivers, along with key aspects of synthesis and materials engineering required for development of these materials. Additionally, we highlight several fundamental milestones required for realization of electronic-grade 2D materials, and intend this article to serve as a guide for researchers in the field. △ Less

Submitted 30 August, 2018; originally announced August 2018.

Gilbert dam** of high anisotropy Co/Pt multilayers

Authors: Thibaut Devolder, S. Couet, J. Swerts, G. S. Kar

Abstract: Using broadband ferromagnetic resonance, we measure the dam** parameter of [Co(5 Å)/Pt(3 Å)]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interfaces essentially free of intermixing despite the miscible character of Co and Pt. Gilbert dam** parameters as low as 0.021 can be obtained despite a magneto-cr… ▽ More Using broadband ferromagnetic resonance, we measure the dam** parameter of [Co(5 Å)/Pt(3 Å)]${\times 6}$ multilayers whose growth was optimized to maximize the perpendicular anisotropy. Structural characterizations indicate abrupt interfaces essentially free of intermixing despite the miscible character of Co and Pt. Gilbert dam** parameters as low as 0.021 can be obtained despite a magneto-crystalline anisotropy as large as $10^6~\textrm{J/m}^3$. The inhomogeneous broadening accounts for part of the ferromagnetic resonance linewidth, indicating some structural disorder leading to a equivalent 20 mT of inhomogenity of the effective field. The unexpectedly relatively low dam** factor indicates that the presence of the Pt heavy metal within the multilayer may not be detrimental to the dam** provided that intermixing is avoided at the Co/Pt interfaces. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Journal ref: J. Phys. D:Appl. Phys. 51 135002 (2018)

Photo-induced Entanglement in a Magnonic Floquet Topological Insulator

Authors: Satyaki Kar, Banasri Basu

Abstract: When irradiated via high frequency circularly polarized light, the stroboscopic dynamics in a Heisenberg spin system on a honeycomb lattice develops a next nearest neighbor (NNN) Dzyaloshinskii-Moriya (DM) type term\cite{owerre}, making it a magnonic Floquet topological insulator. We investigate the entanglement generation and its evolution on such systems - particularly an irradiated ferromagneti… ▽ More When irradiated via high frequency circularly polarized light, the stroboscopic dynamics in a Heisenberg spin system on a honeycomb lattice develops a next nearest neighbor (NNN) Dzyaloshinskii-Moriya (DM) type term\cite{owerre}, making it a magnonic Floquet topological insulator. We investigate the entanglement generation and its evolution on such systems - particularly an irradiated ferromagnetic XXZ spin-$\frac{1}{2}$ model in a honeycomb lattice as the system parameters are optically tuned. In the high frequency limit, we compute the lowest quasi-energy state entanglement in terms of the concurrence between nearest neighbor (NN) and NNN pair of spins and witness the entanglement transitions occurring there. For the easy axis scenario, the unirradiated system forms a product state but entanglement grows between the NNN spin pairs beyond some cut-off DM strength. Contrarily in easy planar case, NN and NNN spins remain already entangled in the unirradiated limit. It then goes through an entanglement transition which causes decrease (increase) of the NN (NNN) concurrences down to zero (up to some higher value) at some critical finite DM interaction strength. For a high frequency of irradiation and a suitably chosen anisotropy parameter, we can vary the field strength to witness sudden death and revival of entanglement in the Floquet system. Both exact diagonalization and modified Lanczos techniques are used to obtain the results upto 24 site lattice. We also calculate the thermal entanglement and obtain estimates for the threshold temperatures below which non-zero concurrence can be expected in the system. △ Less

Submitted 12 October, 2018; v1 submitted 6 June, 2018; originally announced June 2018.

Comments: Updated Version

Journal ref: Phys. Rev. B 98, 245119 (2018)

Study of supersolidity in the two-dimensional Hubbard-Holstein model

Authors: A. Ghosh, S. Kar, S. Yarlagadda

Abstract: We derive an effective Hamiltonian for the two-dimensional Hubbard-Holstein model in the regimes of strong electron-electron and strong electron-phonon interactions by using a nonperturbative approach. In the parameter region where the system manifests the existence of a correlated singlet phase, the effective Hamiltonian transforms to a $t_1-V_1-V_2-V_3$ Hamiltonian for hard-core-bosons on a chec… ▽ More We derive an effective Hamiltonian for the two-dimensional Hubbard-Holstein model in the regimes of strong electron-electron and strong electron-phonon interactions by using a nonperturbative approach. In the parameter region where the system manifests the existence of a correlated singlet phase, the effective Hamiltonian transforms to a $t_1-V_1-V_2-V_3$ Hamiltonian for hard-core-bosons on a checkerboard lattice. We employ quantum Monte Carlo simulations, involving stochastic-series-expansion technique, to obtain the ground state phase diagram. At filling $1/8$, as the strength of off-site repulsion increases, the system undergoes a first-order transition from a superfluid to a diagonal striped solid with ordering wavevector $\vec{Q}=(π/4,3π/4)$ or $(π/4,5π/4)$. Unlike the one-dimensional situation, our results in the two-dimensional case reveal a supersolid phase (corresponding to the diagonal striped solid) around filling $1/8$ and at large off-site repulsions. Furthermore, for small off-site repulsions, we witness a valence bond solid at one-fourth filling and tiny phase-separated regions at slightly higher fillings. △ Less

Submitted 2 April, 2018; v1 submitted 8 March, 2018; originally announced March 2018.

Comments: Accepted in EPJ B

Andreev tunnelling and Josephson current in light irradiated graphene

Authors: Debabrata Sinha, Satyaki Kar

Abstract: We investigate the Andreev tunneling and Josephson current in graphene irradiated with high-frequency linearly polarized light. The corresponding stroboscopic dynamics can be solved using Floquet mechanism which results in an effective stationary theory to the problem. It exhibits anisotropy in the Dirac spectrum and modifies the so-called pseudospin-momentum locking in graphene. The Andreev refle… ▽ More We investigate the Andreev tunneling and Josephson current in graphene irradiated with high-frequency linearly polarized light. The corresponding stroboscopic dynamics can be solved using Floquet mechanism which results in an effective stationary theory to the problem. It exhibits anisotropy in the Dirac spectrum and modifies the so-called pseudospin-momentum locking in graphene. The Andreev reflection at a normal graphene - superconductor (NS) interface becomes an oscillatory function of the optical strength. Specifically we find that, by varying the polarization direction we can both suppress AR considerably or cause the Andreev transport to remain maximum at sub-gap excitation energies even in the presence of Fermi level mismatch. Furthermore, we study the optical effect on the Andreev bound states (ABS) within a short normal-graphene sheet, sandwiched between two s-wave superconductors. It shows redistribution of the low energy regime in the ABS spectrum, which in turn, has major effect in sha** the Josephson super-current. Subjected to efficient tuning, such current can be sufficiently altered even at the charge neutrality point. Our observations provide useful feedback in regulating the quantum transport in Dirac-like systems, achieved via controlled off-resonant optical irradiation on them. △ Less

Submitted 20 June, 2018; v1 submitted 26 May, 2017; originally announced May 2017.

Comments: Final version

Journal ref: Current Applied Physics Vol. 18, Issue 9. Pages 1087-1094 (2018)

Magnons in a two dimensional transverse field XXZ model

Authors: Satyaki Kar, Keola Wierschem, Pinaki Sengupta

Abstract: The XXZ model on a square lattice in the presence of a transverse magnetic field is studied within the spin wave theory to investigate the resulting canted antiferromagnet. The small and large field regimes are probed separately both for easy-axis and easy-plane scenarios which reveal an unentangled factorized ground state at an intermediate value of the field. Goldstone modes are obtained for the… ▽ More The XXZ model on a square lattice in the presence of a transverse magnetic field is studied within the spin wave theory to investigate the resulting canted antiferromagnet. The small and large field regimes are probed separately both for easy-axis and easy-plane scenarios which reveal an unentangled factorized ground state at an intermediate value of the field. Goldstone modes are obtained for the field-free $XY$ antiferromagnet as well as for the isotropic antiferromagnet with field up to its saturation value. Moreover, for an easy-plane anisotropy, we find that there exists a non-zero field, where magnon degeneracy appears as a result of restoration of an U(1) sublattice symmetry and that, across that field, there occurs a magnon band crossing. For completeness, we then obtain the system phase diagram for $S=1/2$ via large scale quantum Monte Carlo simulations using the stochastic series expansion technique. Our numerical method is based on a quantization of spin along the direction of the applied magnetic field and does not suffer from a sign-problem, unlike comparable algorithms based on a spin quantization along the axis of anisotropy. With this formalism, we are also able to obtain powder averages of the transverse and longitudinal magnetizations, which may be useful for understanding experimental measurements on polycrystalline samples. △ Less

Submitted 24 July, 2017; v1 submitted 20 December, 2016; originally announced December 2016.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. B 96, 045126 (2017)

Two rate periodic protocol with dynamics driven through many cycles

Authors: Satyaki Kar

Abstract: We study the long time dynamics in closed quantum systems periodically driven via time dependent parameters with two frequencies $ω_1$ and $ω_2=r ω_1$. Tuning of the ratio $r$ there can unleash plenty of dynamical phenomena to occur. Our study includes integrable models like Ising and XY models in $d=1$ and Kitaev model in $d=1$ and $2$ and can also be extended to Dirac fermions in graphene. We wi… ▽ More We study the long time dynamics in closed quantum systems periodically driven via time dependent parameters with two frequencies $ω_1$ and $ω_2=r ω_1$. Tuning of the ratio $r$ there can unleash plenty of dynamical phenomena to occur. Our study includes integrable models like Ising and XY models in $d=1$ and Kitaev model in $d=1$ and $2$ and can also be extended to Dirac fermions in graphene. We witness the wave-function overlap or dynamic freezing to occur within some small/ intermediate frequency regimes in the $(ω_1 ,r)$ plane (with $r\ne0$) when the ground state is evolved through single cycle of driving. However, evolved states soon become steady with long driving and the freezing scenario gets rarer. We extend the formalism of adiabatic-impulse approximation for many cycle driving within our two-rate protocol and show the near-exact comparisons at small frequencies. An extension of the rotating wave approximation is also developed to gather an analytical framework of the dynamics at high frequencies. Finally we compute the entanglement entropy in the stroboscopically evolved states within the gapped phases of the system and observe how it gets tuned with the ratio $r$ in our protocol. The minimally entangled states are found to fall within the regime of dynamical freezing. In general, the results indicate that the entanglement entropy in our driven short-ranged integrable systems follow genuine non-area law of scaling and show a convergence (with a $r$ dependent pace) towards volume scaling behavior as the driving is continued for long time. △ Less

Submitted 7 December, 2016; v1 submitted 11 July, 2016; originally announced July 2016.

Comments: 10 pages, 9 figures

Journal ref: Phys. Rev. B 95, 085141 (2017)

Tuning towards dynamic freezing using a two-rate protocol

Authors: Satyaki Kar, Bhaskar Mukherjee, K. Sengupta

Abstract: We study periodically driven closed quantum systems where two parameters of the system Hamiltonian are driven with frequencies $ω_1$ and $ω_2=r ω_1$. We show that such drives may be used to tune towards dynamics induced freezing where the wavefunction of the state of the system after a drive cycle at time $T= 2π/ω_1$ has almost perfect overlap with the initial state. We locate regions in the… ▽ More We study periodically driven closed quantum systems where two parameters of the system Hamiltonian are driven with frequencies $ω_1$ and $ω_2=r ω_1$. We show that such drives may be used to tune towards dynamics induced freezing where the wavefunction of the state of the system after a drive cycle at time $T= 2π/ω_1$ has almost perfect overlap with the initial state. We locate regions in the $(ω_1 ,r)$ plane where the freezing is near exact for a class of integrable and a specific non-integrable model. The integrable models that we study encompass Ising and XY models in $d=1$, Kitaev model in $d=2$, and Dirac fermions in graphene and atop a topological insulator surface whereas the non-integrable model studied involves the experimentally realized one-dimensional (1D) tilted Bose-Hubbard model in an optical lattice. In addition, we compute the relevant correlation functions of such driven systems and describe their characteristics in the region of $(ω_1,r)$ plane where the freezing is near-exact. We supplement our numerical analysis with semi-analytic results for integrable driven systems within adiabatic-impulse approximation and discuss experiments which may test our theory. △ Less

Submitted 28 April, 2016; originally announced April 2016.

Comments: v1: 9 pages 9 figs

Journal ref: Phys. Rev. B 94, 075130 (2016)

Direct and Scalable Chemical Vapor Deposition of Ultrathin Low-Noise MoS2 Membranes on Apertures

Authors: Pradeep Waduge, Ismail Bilgin, Joseph Larkin, Kenneth Goodfellow, Adam C. Graham, David C. Bell, Nick Vamivakas, Swastik Kar, Meni Wanunu

Abstract: We show that atomically thin molybdenum disulfide (MoS2) crystals can grow without any underlying substrates into free-standing atomically-thin layers, maintaining their planar 2D form. Using this property, we present a new mechanism for 2D crystal synthesis, i.e. reagent-limited nucleation near an aperture edge followed by reactions that allow crystal growth into the free-space of the aperture. S… ▽ More We show that atomically thin molybdenum disulfide (MoS2) crystals can grow without any underlying substrates into free-standing atomically-thin layers, maintaining their planar 2D form. Using this property, we present a new mechanism for 2D crystal synthesis, i.e. reagent-limited nucleation near an aperture edge followed by reactions that allow crystal growth into the free-space of the aperture. Such an approach enables us, for the first time, the direct and selective growth of freestanding membranes of atomically thin MoS2 layers across micrometer-scale pre-fabricated solid-state apertures in SiNx membranes. Under optimal conditions, MoS2 grows preferentially across apertures, resulting in sealed membranes that are one to a few atomic layers thick. Since our method involves free-space growth and is devoid of either substrates or transfer, it is conceivably the most contamination-free method for obtaining 2D crystals reported so far. The membrane quality was investigated using atomic-resolution transmission electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, and low-noise ion-current recordings through nanopores fabricated in such membranes. △ Less

Submitted 30 June, 2015; v1 submitted 11 May, 2015; originally announced May 2015.

Comments: This paper is withdrawn by the author due to critical errors in the data and incomplete data in the paper

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Authors: Ismail Bilgin, Fangze Liu, Anthony Vargas, Andrew Winchester, Michael K. L. Man, Moneesh Upmanyu, Keshav M Dani, Gautam Gupta, Saikat Talapatra, Aditya D. Mohite, Swastik Kar

Abstract: The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We presen… ▽ More The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few- layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm2/Vs in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence map** over entire crystals with areas exceeding hundreds of square micrometers. Owing to their high crystalline quality, Raman spectroscopy on these samples reveal a range of multi-phonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness- and substrate-dependence of the extremely weak phonon processes at 285 cm-1 and 487 cm-1 in 2D MoS2. The ultra-high, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on device fabricated with mechanically exfoliated that were artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D MoS2 for scalable, high-quality optoelectronics. △ Less

Submitted 20 August, 2015; v1 submitted 19 April, 2015; originally announced April 2015.

Comments: Published in ACS Nano

Journal ref: ACS Nano 9 (9), 8822 - 8832 (2015)

Coexistence of long-range orders in a Bose-Holstein model

Authors: Satyaki Kar, Sudhakar Yarlagadda

Abstract: Exploring supersolidity in naturally occurring and artificially designed systems has been and will continue to be an area of immense interest. Here, we study how superfluid and charge-density-wave (CDW) states cooperate or compete in a minimal model for hard-core-bosons (HCBs) coupled locally to optical phonons: a two-dimensional Bose-Holstein model. Our study is restricted to the parameter regime… ▽ More Exploring supersolidity in naturally occurring and artificially designed systems has been and will continue to be an area of immense interest. Here, we study how superfluid and charge-density-wave (CDW) states cooperate or compete in a minimal model for hard-core-bosons (HCBs) coupled locally to optical phonons: a two-dimensional Bose-Holstein model. Our study is restricted to the parameter regimes of strong HCB-phonon coupling and non-adiabaticity. We use Quantum Monte Carlo simulation (involving stochastic-series-expansion technique) to study phase transitions and to investigate whether we have homogeneous or phase-separated coexistence. The effective Hamiltonian involves, besides a nearest-neighbor hop** and a nearest-neighbor repulsion, sizeable double-hop** terms (obtained from second-order perturbation). At densities not far from half-filling, in the parameter regime where the double-hop** terms are non-negligible (negligible) compared to the nearest-neighbor hop**, we get checkerboard-supersolidity (phase separation) with CDW being characterized by ordering wavevector $\vec{Q}=(π,π)$. △ Less

Submitted 25 May, 2015; v1 submitted 19 January, 2015; originally announced January 2015.

Comments: Revised version

Manypolaron system in the Fractional Dimensional Space within Plasmon Pole Approximatiion

Authors: Krushna Mohan Mohapatra, Birendra Kumar Panda, Susmita Kar

Abstract: The polaron binding energy and effective mass in a degenerate polar gas is calculated in the fractional-dimensional approach under plasmon pole approximation.The effect of carrier densities on the static and dynamic screening correction of the electron-phonon interaction and electron-electron interaction to the polaronic propertis is calculated from electron self-energies within the second-order p… ▽ More The polaron binding energy and effective mass in a degenerate polar gas is calculated in the fractional-dimensional approach under plasmon pole approximation.The effect of carrier densities on the static and dynamic screening correction of the electron-phonon interaction and electron-electron interaction to the polaronic propertis is calculated from electron self-energies within the second-order perturbation method. The Hubbard local field factor has been used for the static screening correction in the polaronic properties. We found that polaronic properties decrease with increase with carrier density and dimensionality of the system. △ Less

Submitted 20 October, 2014; originally announced October 2014.

Comments: 16 pages, 3 figures, 3 tables

Tuning Photoinduced Terahertz Conductivity in Monolayer Graphene: Optical Pump Terahertz Probe Spectroscopy

Authors: Srabani Kar, Dipti R. Mohapatra, Eric Freysz, A. K. Sood

Abstract: Optical pump-terahertz probe differential transmission measurements of as-prepared single layer graphene (AG)(unintentionally hole doped with Fermi energy $E_F$ at $\sim$180 meV), nitrogen do** compensated graphene (NDG) with $E_F$ $\sim$10 meV and thermally annealed doped graphene (TAG) are examined quantitatively to understand the opposite signs of photo-induced dynamic terahertz conductivity… ▽ More Optical pump-terahertz probe differential transmission measurements of as-prepared single layer graphene (AG)(unintentionally hole doped with Fermi energy $E_F$ at $\sim$180 meV), nitrogen do** compensated graphene (NDG) with $E_F$ $\sim$10 meV and thermally annealed doped graphene (TAG) are examined quantitatively to understand the opposite signs of photo-induced dynamic terahertz conductivity $Δσ$. It is negative for AG and TAG but positive for NDG. We show that the recently proposed mechanism of multiple generations of secondary hot carriers due to Coulomb interaction of photoexcited carriers with the existing carriers together with the intraband scattering can explain the change of photoinduced conductivity sign and its magnitude. We give a quantitative estimate of $Δσ$ in terms of controlling parameters - the Fermi energy $E_F$ and momentum relaxation time $τ$. Further, the cooling of photoexcited carriers is analyzed using super-collision model which involves defect mediated collision of the hot carriers with the acoustic phonons, thus giving an estimate of the deformation potential. △ Less

Submitted 10 July, 2014; originally announced July 2014.

Comments: 23 pages, 11 figures