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magnetoARPES: Angle Resolved Photoemission Spectroscopy with Magnetic Field Control
Authors:
Sae Hee Ryu,
Garett Reichenbach,
Chris M. Jozwiak,
Aaron Bostwick,
Peter Richter,
Thomas Seyller,
Eli Rotenberg
Abstract:
Angle-Resolved Photoemission Spectroscopy (ARPES) is a premier technique for understanding the electronic excitations in conductive, crystalline matter, in which the induced photocurrent is collected and dispersed in energy and angle of emission to reveal the energy- and momentum-dependent single particle spectral function $A(\mathbf{k},ω)$. So far, ARPES in a magnetic field has been precluded due…
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Angle-Resolved Photoemission Spectroscopy (ARPES) is a premier technique for understanding the electronic excitations in conductive, crystalline matter, in which the induced photocurrent is collected and dispersed in energy and angle of emission to reveal the energy- and momentum-dependent single particle spectral function $A(\mathbf{k},ω)$. So far, ARPES in a magnetic field has been precluded due to the need to preserve the electron paths between the sample and detector. In this paper we report progress towards "magnetoARPES", a variant of ARPES that can be conducted in a magnetic field. It is achieved by applying a microscopic probe beam ($\lesssim$ 10 $μ$m ) to a thinned sample mounted upon a special sample holder that generates magnetic field confined to a thin layer near the sample surface. In this geometry we could produce ARPES in magnetic fields up to around $\pm$ 100 mT. The magnetic fields can be varied from purely in-plane to nearly purely out-of-plane, by scanning the probe beam across different parts of the device. We present experimental and simulated data for graphene to explore the aberrations induced by the magnetic field. These results demonstrate the viability of the magnetoARPES technique for exploring symmetry breaking effects in weak magnetic fields.
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Submitted 14 April, 2023;
originally announced April 2023.
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Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$
Authors:
Tiancong Zhu,
Alexander J. Bishop,
Tong Zhou,
Menglin Zhu,
Dante J. O'Hara,
Alexander A. Baker,
Shuyu Cheng,
Robert C. Walko,
Jacob J. Repicky,
Jay A. Gupta,
Chris M. Jozwiak,
Eli Rotenberg,
**woo Hwang,
Igor Žutić,
Roland K. Kawakami
Abstract:
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of…
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The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
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Submitted 17 March, 2020;
originally announced March 2020.
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New Synthesis Method for the Growth of Epitaxial Graphene
Authors:
Xiaozhu Yu,
Choongyu Hwang,
Chris M. Jozwiak,
Annemarie Kohl,
Andreas K. Schmid,
Alessandra Lanzara
Abstract:
As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely "face-to-face" method, has been reported in this paper. The structure and…
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As a viable candidate for an all-carbon post-CMOS electronics revolution, epitaxial graphene has attracted significant attention. To realize its application potential, reliable methods for fabricating large-area single-crystalline graphene domains are required. A new way to synthesize high quality epitaxial graphene, namely "face-to-face" method, has been reported in this paper. The structure and morphologies of the samples are characterized by low-energy electron diffraction, atomic force microscopy, angle-resolved photoemission spectroscopy and Raman spectroscopy. The grown samples show better quality and larger length scales than samples grown through conventional thermal desorption. Moreover the graphene thickness can be easily controlled by changing annealing temperature.
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Submitted 19 April, 2011;
originally announced April 2011.
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Revealing Charge Density Wave Formation in the LaTe_2 System by Angle Resolved Photoemission Spectroscopy
Authors:
D. R. Garcia,
G. -H. Gweon,
S. Y. Zhou,
J. Graf,
C. M. Jozwiak,
M. H. Jung,
Y. S. Kwon,
A. Lanzara
Abstract:
We present the first direct study of charge density wave (CDW) formation in quasi-2D single layer LaTe_2 using high-resolution angle resolved photoemission spectroscopy (ARPES) and low energy electron diffraction (LEED). CDW formation is driven by Fermi surface (FS) nesting, however characterized by a surprisingly smaller gap (50meV) than seen in the double layer RTe_3 compounds, extending over…
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We present the first direct study of charge density wave (CDW) formation in quasi-2D single layer LaTe_2 using high-resolution angle resolved photoemission spectroscopy (ARPES) and low energy electron diffraction (LEED). CDW formation is driven by Fermi surface (FS) nesting, however characterized by a surprisingly smaller gap (50meV) than seen in the double layer RTe_3 compounds, extending over the entire FS. This establishes LaTe_2 as the first reported semiconducting 2D CDW system where the CDW phase is FS nesting driven. In addition, the layer dependence of this phase in the tellurides and the possible transition from a stripe to a checkerboard phase is discussed.
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Submitted 22 June, 2007; v1 submitted 20 March, 2007;
originally announced March 2007.
