Showing 1–50 of 77 results for author: Joynt, R

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Authors: Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph, Collin C. D. Frink, Robert Joynt, M. A. Eriksson, Mark Friesen

Abstract: Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main ben… ▽ More Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing. △ Less

Submitted 31 May, 2024; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 13 pages (5 main text), 5 figures. Published version

Journal ref: npj Quantum Inf 10, 54 (2024)

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Authors: Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci, Susan N. Coppersmith, Mark Friesen

Abstract: Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we t… ▽ More Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer. △ Less

Submitted 11 January, 2024; v1 submitted 4 March, 2023; originally announced March 2023.

Comments: 35 pages, 22 figures

Journal ref: Phys. Rev. B 108, 125405 (2023)

Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration

Authors: Benjamin D. Woods, M. A. Eriksson, Robert Joynt, Mark Friesen

Abstract: We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coup… ▽ More We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coupling is induced, at all physically relevant electric field strengths, which is over an order of magnitude larger than what is found in conventional Si/SiGe heterostructures without Ge concentration oscillations. This enhancement is caused by the Ge concentration oscillations producing wave-function satellite peaks a distance $2 π/λ$ away in momentum space from each valley, which then couple to the opposite valley through Dresselhaus spin-orbit coupling. Our results indicate that the enhanced spin-orbit coupling can enable fast spin manipulation within Si quantum dots using electric dipole spin resonance in the absence of micromagnets. Indeed, our calculations yield a Rabi frequency $Ω_{\text{Rabi}}/B > 500~\text{MHz/T}$ near the optimal Ge oscillation wavelength $λ= 1.57~\text{nm}$. △ Less

Submitted 16 January, 2023; v1 submitted 4 October, 2022; originally announced October 2022.

Comments: 19 pages, 11 figures

Journal ref: Phys. Rev. B 107, 035418 (2023)

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson

Abstract: Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete… ▽ More Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices. △ Less

Submitted 15 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: Main text and supplemental information, 11 pages, 7 figures

Journal ref: Nature Communications 13, 7777 (2022)

Evolution with Magnetic Field of Discrete Scale Invariant Supercritical States in Graphene

Authors: Hailong Li, Haiwen Liu, Robert Joynt, X. C. Xie

Abstract: We investigate the quasi-bound states of a Coulomb impurity in graphene in the presence of a magnetic field. \ These states exhibit the dramatic and rather rare property of discrete scale invariance when the Coulomb potential is supercritical. \ We show using both Wentzel-Kramers-Brillouin (WKB) approximation and numerical studies that the supercritical states are converted to subcritical states a… ▽ More We investigate the quasi-bound states of a Coulomb impurity in graphene in the presence of a magnetic field. \ These states exhibit the dramatic and rather rare property of discrete scale invariance when the Coulomb potential is supercritical. \ We show using both Wentzel-Kramers-Brillouin (WKB) approximation and numerical studies that the supercritical states are converted to subcritical states as the field is increased. \ The local density of states is calculated and it shows direct signatures of discrete scale invariance. \ In a magnetic field, these signatures are gradually destroyed in a systematic way. \ Hence the effect that we propose can be detected via scanning tunneling microscope experiments. \ The range of magnetic field and energy resolution required are compatible with existing experimental setups. \ These experiments can be performed in a single sample by changing the field; they do not involve changing the nuclear charge. △ Less

Submitted 11 September, 2021; originally announced September 2021.

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Authors: Thomas McJunkin, E. R. MacQuarrie, Leah Tom, S. F. Neyens, J. P. Dodson, Brandur Thorgrimsson, J. Corrigan, H. Ekmel Ercan, D. E. Savage, M. G. Lagally, Robert Joynt, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

Abstract: Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure i… ▽ More Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 104, 085406 (2021)

Tunable discrete scale invariance in transition-metal pentatelluride flakes

Authors: Yanzhao Liu, Huichao Wang, Haipeng Zhu, Yanan Li, Jun Ge, Junfeng Wang, Liang Li, Ji-Yan Dai, Jiaqiang Yan, David Mandrus, Robert Joynt, Jian Wang

Abstract: Log-periodic quantum oscillations discovered in transition-metal pentatelluride give a clear demonstration of discrete scale invariance (DSI) in solid-state materials. The peculiar phenomenon is convincingly interpreted as the presence of two-body quasi-bound states in a Coulomb potential. However, the modifications of the Coulomb interactions in many-body systems having a Dirac-like spectrum are… ▽ More Log-periodic quantum oscillations discovered in transition-metal pentatelluride give a clear demonstration of discrete scale invariance (DSI) in solid-state materials. The peculiar phenomenon is convincingly interpreted as the presence of two-body quasi-bound states in a Coulomb potential. However, the modifications of the Coulomb interactions in many-body systems having a Dirac-like spectrum are not fully understood. Here, we report the observation of tunable log-periodic oscillations and DSI in ZrTe5 and HfTe5 flakes. By reducing the flakes thickness, the characteristic scale factor is tuned to a much smaller value due to the reduction of the vacuum polarization effect. The decreasing of the scale factor demonstrates the many-body effect on the DSI, which has rarely been discussed hitherto. Furthermore, the cut-offs of oscillations are quantitatively explained by considering the Thomas-Fermi screening effect. Our work clarifies the many-body effect on DSI and paves a way to tune the DSI in quantum materials. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: Accepted by npj Quantum Materials

Journal ref: npj Quantum Materials 5, 88 (2020)

Phase diagram of the interacting persistent spin-helix state

Authors: Hong Liu, Weizhe Edward Liu, Stefano Chesi, Robert Joynt, Dimitrie Culcer

Abstract: We study the phase diagram of the interacting two-dimensional electron gas (2DEG) with equal Rashba and Dresselhaus spin-orbit coupling, which for weak coupling gives rise to the well-known persistent spin-helix phase. We construct the full Hartree-Fock phase diagram using a classical Monte-Carlo method analogous to that used in Phys.Rev.B 96, 235425 (2017). For the 2DEG with only Rashba spin-orbi… ▽ More We study the phase diagram of the interacting two-dimensional electron gas (2DEG) with equal Rashba and Dresselhaus spin-orbit coupling, which for weak coupling gives rise to the well-known persistent spin-helix phase. We construct the full Hartree-Fock phase diagram using a classical Monte-Carlo method analogous to that used in Phys.Rev.B 96, 235425 (2017). For the 2DEG with only Rashba spin-orbit coupling, it was found that at intermediate values of the Wigner-Seitz radius rs the system is characterized by a single Fermi surface with an out-of-plane spin polarization, while at slightly larger values of rs it undergoes a transition to a state with a shifted Fermi surface and an in-plane spin polarization. The various phase transitions are first-order, and this shows up in discontinuities in the conductivity and the appearance of anisotropic resistance in the in-plane polarized phase. In this work, we show that the out-of-plane spin-polarized region shrinks as the strength of the Dresselhaus spin-orbit interaction increases, and entirely vanishes when the Rashba and Dresselhaus spin-orbit coupling strengths are equal. At this point, the system can be mapped onto a 2DEG without spin-orbit coupling, and this transformation reveals the existence of an in-plane spin-polarized phase with a single, displaced Fermi surface beyond rs > 2.01. This is confirmed by classical Monte-Carlo simulations. We discuss experimental observation and useful applications of the novel phase, as well as caveats of using the classical Monte-Carlo method. △ Less

Submitted 23 February, 2020; originally announced February 2020.

Comments: 9 pages, 7 figures, 2 tables

Report number: PHYSICAL REVIEW B 102, 205410 (2020)

Journal ref: Phys. Rev. B 102, 205410 (2020)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Authors: Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik, Mark A. I. Johnson, Benjamin Joecker, Arne Laucht, Fay E. Hudson, Kohei M. Itoh, A. Malwin Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Robert Joynt, Andrea Morello

Abstract: We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor… ▽ More We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $μ_{\rm D}$. We observe a magnetic field dependence of the form $1/T_1\propto B_0^5$ for $B_0\gtrsim 3\,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0\lesssim 3\,$T, the relaxation rate changes to $1/T_1\propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1\,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|\uparrow\rangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|\downarrow\rangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes. △ Less

Submitted 26 March, 2019; v1 submitted 17 December, 2018; originally announced December 2018.

Comments: 14 pages, 8 figures. Version 2 has extensive text revisions, typo corrections, and two extra authors

Journal ref: Phys. Rev. B 99, 205306 (2019)

Discrete Scale Invariance in Topological Semimetals

Authors: Haiwen Liu, Hua Jiang, Ziqiang Wang, Robert Joynt, X. C. Xie

Abstract: The discovery of Weyl and Dirac semimetals has produced a number of dramatic physical effects, including the chiral anomaly and topological Fermi arc surface states. We point out that a very different but no less dramatic physical effect is also to be found in these materials: discrete scale invariance. This invariance leads to bound state spectra for Coulomb impurities that repeat when the bindin… ▽ More The discovery of Weyl and Dirac semimetals has produced a number of dramatic physical effects, including the chiral anomaly and topological Fermi arc surface states. We point out that a very different but no less dramatic physical effect is also to be found in these materials: discrete scale invariance. This invariance leads to bound state spectra for Coulomb impurities that repeat when the binding energy is changed by a fixed factor, reminiscent of fractal behavior. We show that this effect follows from the peculiar dispersion relation in Weyl and Dirac semimetals. It is observed when such a material is placed in very strong magnetic field B: there are oscillations in the magnetoresistivity somewhat similar to Shubnikov-de Haas oscillations but with a periodicity in ln B rather than 1/B. These oscillations should be present in other thermodynamic and transport properties. The oscillations have now been seen in three topological semimetals: ZrTe$_{5}$, TaAs, and Bi. △ Less

Submitted 6 July, 2018; originally announced July 2018.

Comments: 4 figures

Steering random spin systems to speed up the quantum adiabatic algorithm

Authors: A. Barış Özgüler, Robert Joynt, Maxim G. Vavilov

Abstract: A general time-dependent quantum system can be driven fast from its initial ground state to its final ground state without generating transitions by adding a steering term to the Hamiltonian. We show how this technique can be modified to improve on the standard quantum adiabatic algorithm by making a single-particle and cluster approximation to the steering term. The method is applied to a one-dim… ▽ More A general time-dependent quantum system can be driven fast from its initial ground state to its final ground state without generating transitions by adding a steering term to the Hamiltonian. We show how this technique can be modified to improve on the standard quantum adiabatic algorithm by making a single-particle and cluster approximation to the steering term. The method is applied to a one-dimensional Ising model in a random field. For the limit of strong disorder, the correction terms significantly enhance the probability for the whole system to remain in the ground state for the proposed non-stoquastic annealing protocol. We demonstrate that even when transitions occur for stronger interaction between qubits, the most probable quantum state is one of the lower energy states of the final Hamiltonian. Since the method can be applied to any model, and more sophisticated approximations to the steering term are possible, the new technique opens up an avenue for the improvement of the quantum adiabatic algorithm. △ Less

Submitted 10 November, 2018; v1 submitted 3 April, 2018; originally announced April 2018.

Comments: To appear

Journal ref: Phys. Rev. A 98, 062311 (2018)

A generalized Stoner criterion and versatile spin ordering in two-dimensional spin-orbit coupled electron systems

Authors: Weizhe Edward Liu, Stefano Chesi, David Webb, U. Zuelicke, R. Winkler, Robert Joynt, Dimitrie Culcer

Abstract: Spin-orbit coupling is a single-particle phenomenon known to generate topological order, and electron-electron interactions cause ordered many-body phases to exist. The rich interplay of these two mechanisms is present in a broad range of materials, and has been the subject of considerable ongoing research and controversy. Here we demonstrate that interacting two-dimensional electron systems with… ▽ More Spin-orbit coupling is a single-particle phenomenon known to generate topological order, and electron-electron interactions cause ordered many-body phases to exist. The rich interplay of these two mechanisms is present in a broad range of materials, and has been the subject of considerable ongoing research and controversy. Here we demonstrate that interacting two-dimensional electron systems with strong spin-orbit coupling exhibit a variety of time reversal symmetry breaking phases with unconventional spin alignment. We first prove that a Stoner-type criterion can be formulated for the spin polarization response to an electric field, which predicts that the spin polarization susceptibility diverges at a certain value of the electron-electron interaction strength. The divergence indicates the possibility of unconventional ferromagnetic phases even in the absence of any applied electric or magnetic field. This leads us, in the second part of this work, to study interacting Rashba spin-orbit coupled semiconductors in equilibrium in the Hartree-Fock approximation as a generic minimal model. Using classical Monte-Carlo simulations we construct the complete phase diagram of the system as a function of density and spin-orbit coupling strength. It includes both an out-of-plane spin polarized phase and in-plane spin-polarized phases with shifted Fermi surfaces and rich spin textures, reminiscent of the Pomeranchuk instability, as well as two different Fermi-liquid phases having one and two Fermi surfaces, respectively, which are separated by a Lifshitz transition. We discuss possibilities for experimental observation and useful application of these novel phases, especially in the context of electric-field-controlled macroscopic spin polarizations. △ Less

Submitted 6 August, 2017; originally announced August 2017.

Comments: 17 pages, 5 figures

Journal ref: Phys. Rev. B 96, 235425 (2017)

Interband Theory of Kerr Rotation in Unconventional Superconductors

Authors: Robert Joynt, Wen-Chin Wu

Abstract: Recent experiments have shown rotation of the plane of polarization of light reflected from the surface of some superconductors. This indicates that time reversal and certain mirror symmetries are broken in the ordered phase. The photon energy exceeds the electronic bandwidth, so that completely filled or completely empty bands must play a role. We show that in strong-coupling theory a Coulomb int… ▽ More Recent experiments have shown rotation of the plane of polarization of light reflected from the surface of some superconductors. This indicates that time reversal and certain mirror symmetries are broken in the ordered phase. The photon energy exceeds the electronic bandwidth, so that completely filled or completely empty bands must play a role. We show that in strong-coupling theory a Coulomb interaction may produce an order parameter in the unoccupied band that explains the observations. The theory puts tight constraints on the form of the order parameter in different bands. We propose that the experiments have detected, for the first time, the existence of a superconducting order parameter in a band far from the Fermi energy. △ Less

Submitted 14 May, 2017; originally announced May 2017.

Comments: 4 pages

Evanescent-wave Johnson Noise in small devices

Authors: Vickram N. Premakumar, Maxim G. Vavilov, Robert Joynt

Abstract: In many quantum computer architectures, the qubits are in close proximity to metallic device elements. The fluctuating currents in the metal give rise to noisy electromagnetic fields that leak out into the surrounding region. These fields are known as evanescent-wave Johnson noise. The noise can decohere the qubits. We present the general theory of this effect for charge qubits subject to electric… ▽ More In many quantum computer architectures, the qubits are in close proximity to metallic device elements. The fluctuating currents in the metal give rise to noisy electromagnetic fields that leak out into the surrounding region. These fields are known as evanescent-wave Johnson noise. The noise can decohere the qubits. We present the general theory of this effect for charge qubits subject to electric noise and for spin and magnetic qubits subject to magnetic noise. A map** of the quantum-mechanical problem onto a problem in classical electrodynamics simplifies the calculations. The focus is on relatively simple geometries in which analytical calculations can be done. New results are presented for the local noise spectral density in the vicinity of cylindrical conductors such as small antennae, noise from objects that can be treated as dipoles, and noise correlation functions for several geometries. We summarize the current state of the comparison of theory with experimental results on decoherence times of qubits. Emphasis is placed on qualitative understanding of the basic concepts and phenomena. △ Less

Submitted 2 May, 2017; originally announced May 2017.

Comments: 36 pages, 8 figures

Journal ref: Quantum Sci. Technol. 3, 015001 (2017)

Quantum interference in topological insulator Josephson junctions

Authors: Juntao Song, Haiwen Liu, Jie Liu, Yuxian Li, Robert Joynt, Qing-feng Sun, X. C. Xie

Abstract: Using non-equilibrium Green's functions, we studied numerically the transport properties of a Josephson junction, superconductor-topological insulator-superconductor hybrid system. Our numerical calculation shows first that proximity-induced superconductivity is indeed observed in the edge states of a topological insulator adjoining two superconducting leads and second that the special characteris… ▽ More Using non-equilibrium Green's functions, we studied numerically the transport properties of a Josephson junction, superconductor-topological insulator-superconductor hybrid system. Our numerical calculation shows first that proximity-induced superconductivity is indeed observed in the edge states of a topological insulator adjoining two superconducting leads and second that the special characteristics of topological insulators endow the edge states with an enhanced proximity effect with a superconductor but do not forbid the bulk states to do the same. In a size-dependent analysis of the local current, it was found that a few residual bulk states can lead to measurable resistance, whereas because these bulk states spread over the whole sample, their contribution to the interference pattern is insignificant when the sample size is in the micrometer range. Based on these numerical results, it is concluded that the apparent disappearance of residual bulk states in the superconducting interference process as described in Ref. [\onlinecite{HartNautrePhys2014f}] is just due to the effects of size: the contribution of the topological edge states outweighs that of the residual bulk states. △ Less

Submitted 4 May, 2016; v1 submitted 2 February, 2016; originally announced February 2016.

Comments: 8 pages and 4 figures

Journal ref: Phys. Rev. B 93, 195302 (2016)

Do micromagnets expose spin qubits to charge and Johnson noise?

Authors: Allen Kha, Robert Joynt, Dimitrie Culcer

Abstract: An ideal quantum dot spin qubit architecture requires a local magnetic field for one-qubit rotations. Such an inhomogeneous magnetic field, which could be implemented via a micromagnet, couples the qubit subspace with background charge fluctuations causing dephasing of spin qubits. In addition, a micromagnet generates magnetic field evanescent-wave Johnson noise. We derive an effective Hamiltonian… ▽ More An ideal quantum dot spin qubit architecture requires a local magnetic field for one-qubit rotations. Such an inhomogeneous magnetic field, which could be implemented via a micromagnet, couples the qubit subspace with background charge fluctuations causing dephasing of spin qubits. In addition, a micromagnet generates magnetic field evanescent-wave Johnson noise. We derive an effective Hamiltonian for the combined effect of a slanting magnetic field and charge noise on a single-spin qubit and estimate the free induction decay dephasing times T2* for Si and GaAs. The effect of the micromagnet on Si qubits is comparable in size to that of spin-orbit coupling at an applied field of B=1T, whilst dephasing in GaAs is expected to be dominated by spin-orbit coupling. Tailoring the magnetic field gradient can efficiently reduce T2* in Si. In contrast, the Johnson noise generated by a micromagnet will only be important for highly coherent spin qubits. △ Less

Submitted 16 November, 2015; originally announced November 2015.

Journal ref: Appl. Phys. Lett. 107, 172101 (2015)

Electromagnetic properties of thin metallic films

Authors: Luke S. Langsjoen, Amrit Poudel, Maxim G. Vavilov, Robert Joynt

Abstract: We compute the electromagnetic fluctuations due to evanescent-wave Johnson noise in the vicinity of a thin conducting film, such as a metallic gate or a 2-dimensional electron gas. This noise can decohere a nearby qubit and it is also responsible for Casimir forces. We have improved on previous calculations by including the nonlocal dielectric response of the film, which is an important correction… ▽ More We compute the electromagnetic fluctuations due to evanescent-wave Johnson noise in the vicinity of a thin conducting film, such as a metallic gate or a 2-dimensional electron gas. This noise can decohere a nearby qubit and it is also responsible for Casimir forces. We have improved on previous calculations by including the nonlocal dielectric response of the film, which is an important correction at short distances. Remarkably, the fluctuations responsible for decoherence of charge qubits from a thin film are greatly enhanced over the case of a conducting half space. The decoherence times can be reduced by over an order of magnitude by decreasing the film thickness. This appears to be due to the leakage into the vacuum of modes that are well localized in the perpendicular direction. There is no corresponding effect for spin qubits (magnetic field fluctuations). We also show that a nonlocal dielectric function naturally removes the divergence in the Casimir force at vanishing separation between two metallic sheets or halfspaces. In the separation regime where a local and nonlocal treatment are noticeably distinct, the Casimir attraction between two thin sheets and two halfspaces are practically indistinguishable for any physical film thickness. △ Less

Submitted 8 October, 2013; originally announced October 2013.

Journal ref: Phys. Rev. B 89, 115401 (2014)

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

Authors: Charles Tahan, Robert Joynt

Abstract: We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The relaxation times depend sensitively on system parameters such as the dot size and the external magnetic field. Generally, however, orbital relaxation times are short… ▽ More We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The relaxation times depend sensitively on system parameters such as the dot size and the external magnetic field. Generally, however, orbital relaxation times are short in strained silicon (from a tenth of a microsecond to picoseconds), spin relaxation times are long (microseconds to greater than seconds), while valley relaxation times are expected to lie in between. The focus is on relaxation due to emission or absorption of phonons, but for spin relaxation we also consider competing mechanisms such as charge noise. Where appropriate, comparison is made to reference systems such as quantum dots in III-V materials and silicon donor states. The phonon bottleneck effect is shown to be rather small in the silicon dots of interest. We compare the theoretical predictions to some recent spin relaxation experiments and comment on the possible effects of non-ideal dots. △ Less

Submitted 28 February, 2013; v1 submitted 2 January, 2013; originally announced January 2013.

Comments: Previously unpublished as well as new results for spin relaxation in ideal silicon quantum dots. Minor update: fixed Fig 6

Journal ref: Phys. Rev. B 89, 075302 (2014)

Signatures of Valley Kondo Effect in Si/SiGe Quantum Dots

Authors: Mingyun Yuan, R. Joynt, Zhen Yang, Chunyang Tang, D. E. Savage, M. G. Lagally, M. A. Eriksson, A. J. Rimberg

Abstract: We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side… ▽ More We report measurements consistent with the valley Kondo effect in Si/SiGe quantum dots, evidenced by peaks in the conductance versus source-drain voltage that show strong temperature dependence. The Kondo peaks show unusual behavior in a magnetic field that we interpret as arising from the valley degree of freedom. The interplay of valley and Zeeman splittings is suggested by the presence of side peaks, revealing a zero-field valley splitting between 0.28 to 0.34 meV. A zero-bias conductance peak for non-zero magnetic field, a phenomenon consistent with valley non- conservation in tunneling, is observed in two samples. △ Less

Submitted 29 June, 2014; v1 submitted 4 December, 2012; originally announced December 2012.

Comments: 16 pages, 7 figures

Journal ref: Phys. Rev. B 90, 035302, (2014)

Magnetization Noise Induced Collapse and Revival of Rabi Oscillations in circuit QED

Authors: Amrit De, Robert Joynt

Abstract: We use a quasi Hamiltonian formalism to describe the dissipative dynamics of a circuit QED qubit that is affected by several fluctuating two level systems with a 1/f noise power spectrum. The qubit-resonator interactions are described by the Jaynes Cummings model. We argue that the presence of pure dephasing noise in such a qubit-resonator system will also induce an energy relaxation mechanism via… ▽ More We use a quasi Hamiltonian formalism to describe the dissipative dynamics of a circuit QED qubit that is affected by several fluctuating two level systems with a 1/f noise power spectrum. The qubit-resonator interactions are described by the Jaynes Cummings model. We argue that the presence of pure dephasing noise in such a qubit-resonator system will also induce an energy relaxation mechanism via a fluctuating dipole coupling term. This random modulation of the coupling is seen to lead to rich physical behavior. For non-Markovian noise, the coupling can either worsen or alleviate decoherence depending on the initial conditions. The magnetization noise leads to behavior resembling the collapse and revival of Rabi oscillations. For a broad distribution of noise couplings, the frequency of these oscillations depends on the mean noise strength. We describe this behavior semi-analytically and find it to be independent of the number of fluctuators. This phenomenon could be used as an in situ probe of the noise characteristics. △ Less

Submitted 17 November, 2012; originally announced November 2012.

Relaxation in quantum dots due to evanescent-wave Johnson noise from a metallic backgate

Authors: Amrit Poudel, Luke Langsjoen, Maxim Vavilov, Robert Joynt

Abstract: We present our study of decoherence in charge (spin) qubits due to evanescent-wave Johnson noise (EWJN) in a laterally coupled double quantum dot (single quantum dot). The high density of evanescent modes in the vicinity of metallic gates causes energy relaxation and a loss of phase coherence of electrons trapped in quantum dots. We derive expressions for the resultant energy relaxation rates of c… ▽ More We present our study of decoherence in charge (spin) qubits due to evanescent-wave Johnson noise (EWJN) in a laterally coupled double quantum dot (single quantum dot). The high density of evanescent modes in the vicinity of metallic gates causes energy relaxation and a loss of phase coherence of electrons trapped in quantum dots. We derive expressions for the resultant energy relaxation rates of charge and spin qubits in a variety of dot geometries, and EWJN is shown to be a dominant source of decoherence for spin qubits held at low magnetic fields. Previous studies in this field approximated the charge or spin qubit as a point dipole. Ignoring the finite size of the quantum dot in this way leads to a spurious divergence in the relaxation rate as the qubit approaches the metal. Our approach goes beyond the dipole approximation and remedies this unphysical divergence by taking into account the finite size of the quantum dot. Additionally, we derive an enhancement of EWJN that occurs outside a thin metallic film, relative to the field surrounding a conducting half-space. △ Less

Submitted 23 January, 2013; v1 submitted 16 November, 2012; originally announced November 2012.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. B 87, 045301 (2013)

Qubit relaxation from evanescent-wave Johnson noise

Authors: Luke S. Langsjoen, Amrit Poudel, Maxim G. Vavilov, Robert Joynt

Abstract: In many quantum computer architectures, the qubits are in close proximity to metallic device elements. Metals have a high density of photon modes, and the fields spill out of the bulk metal because of the evanescent-wave component. Thus thermal and quantum electromagnetic Johnson- type noise from metallic device elements can decohere nearby qubits. In this paper we use quantum electrodynamics to c… ▽ More In many quantum computer architectures, the qubits are in close proximity to metallic device elements. Metals have a high density of photon modes, and the fields spill out of the bulk metal because of the evanescent-wave component. Thus thermal and quantum electromagnetic Johnson- type noise from metallic device elements can decohere nearby qubits. In this paper we use quantum electrodynamics to compute the strength of this evanescent-wave Johnson noise as a function of distance z from a metallic half-space. Previous treatments have shown unphysical divergences at z = 0. We remedy this by using a proper non-local dielectric function. Decoherence rates of local qubits are proportional to the magnitude of electric or magnetic correlation functions evaluated at the qubit position. We present formulas for the decoherence rates. These formulas serve as an important constraint on future device architectures. △ Less

Submitted 22 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. A 86, 010301(R) (2012)

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

Authors: J. R. Prance, Zhan Shi, C. B. Simmons, D. E. Savage, M. G. Lagally, L. R. Schreiber, L. M. K. Vandersypen, Mark Friesen, Robert Joynt, S. N. Coppersmith, M. A. Eriksson

Abstract: We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three tripl… ▽ More We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T. △ Less

Submitted 2 November, 2011; v1 submitted 28 October, 2011; originally announced October 2011.

Comments: 4 pages, 3 figures, supplemental information. Typos fixed; updated to submitted version

Journal ref: Phys. Rev. Lett. 108, 046808 (2012)

Cooling of cryogenic electron bilayers via the Coulomb interaction

Authors: John King Gamble, Mark Friesen, Robert Joynt, S. N. Coppersmith

Abstract: Heat dissipation in current-carrying cryogenic nanostructures is problematic because the phonon density of states decreases strongly as energy decreases. We show that the Coulomb interaction can prove a valuable resource for carrier cooling via coupling to a nearby, cold electron reservoir. Specifically, we consider the geometry of an electron bilayer in a silicon-based heterostructure, and analyz… ▽ More Heat dissipation in current-carrying cryogenic nanostructures is problematic because the phonon density of states decreases strongly as energy decreases. We show that the Coulomb interaction can prove a valuable resource for carrier cooling via coupling to a nearby, cold electron reservoir. Specifically, we consider the geometry of an electron bilayer in a silicon-based heterostructure, and analyze the power transfer. We show that across a range of temperatures, separations, and sheet densities, the electron-electron interaction dominates the phonon heat-dissipation modes as the main cooling mechanism. Coulomb cooling is most effective at low densities, when phonon cooling is least effective in silicon, making it especially relevant for experiments attempting to perform coherent manipulations of single spins. △ Less

Submitted 13 April, 2011; originally announced April 2011.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 84, 125321 (2011)

Phenomenological noise model for superconducting qubits: two-state fluctuators and 1=f noise

Authors: Dong Zhou, Robert Joynt

Abstract: We present a general phenomenological model for superconducting qubits subject to noise produced by two-state fluctuators whose couplings to the qubit are all roughly the same. In flux qubit experiments where the working point can be varied, it is possible to extract both the form of the noise spectrum and the number of fluctuators. We find that the noise has a broad spectrum consistent with 1=f n… ▽ More We present a general phenomenological model for superconducting qubits subject to noise produced by two-state fluctuators whose couplings to the qubit are all roughly the same. In flux qubit experiments where the working point can be varied, it is possible to extract both the form of the noise spectrum and the number of fluctuators. We find that the noise has a broad spectrum consistent with 1=f noise and that the number of fluctuators with slow switching rates is surprisingly small: less than 100. If the fluctuators are interpreted as unpaired surface spins, then the size of their magnetic moments is surprisingly large. △ Less

Submitted 9 April, 2012; v1 submitted 28 February, 2011; originally announced February 2011.

Comments: 7 pages, 2 figures, 1 table

Journal ref: Supercond. Sci. Technol. 25 (2012) 045003

Tunable spin-selective loading of a silicon spin qubit

Authors: C. B. Simmons, J. R. Prance, B. J. Van Bael, Teck Seng Koh, Zhan Shi, D. E. Savage, M. G. Lagally, R. Joynt, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manip… ▽ More The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications. △ Less

Submitted 27 October, 2010; originally announced October 2010.

Comments: 4 pages, 3 figures, Supplemental Information

Journal ref: Phys. Rev. Lett. 106, 156804 (2011)

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Teck Seng Koh, Nakul Shaji, Madhu Thalakulam, L. J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, Robert Joynt, Robert Blick, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when… ▽ More We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed. △ Less

Submitted 5 April, 2011; v1 submitted 31 August, 2010; originally announced August 2010.

Comments: published version, 18 pages

Journal ref: Phys. Rev. B 82, 245312 (2010)

Suppression of Decoherence and Disentanglement by the Exchange Interaction

Authors: Amrit De, Alex Lang, Dong Zhou, Robert Joynt

Abstract: Entangled qubit pairs can serve as a quantum memory or as a resource for quantum communication. The utility of such pairs is measured by how long they take to disentangle or decohere. To answer the question of whether qubit-qubit interactions can prolong entanglement, we calculate the dissipative dynamics of a pair of qubits coupled via the exchange interaction in the presence of random telegraph… ▽ More Entangled qubit pairs can serve as a quantum memory or as a resource for quantum communication. The utility of such pairs is measured by how long they take to disentangle or decohere. To answer the question of whether qubit-qubit interactions can prolong entanglement, we calculate the dissipative dynamics of a pair of qubits coupled via the exchange interaction in the presence of random telegraph noise and $1/f$ noise. We show that for maximally entangled (Bell) states, the exchange interaction generally suppresses decoherence and disentanglement. This suppression is more apparent for random telegraph noise if the noise is non-Markovian, whereas for $1/f$ noise the exchange interaction should be comparable in magnitude to strongest noise source. The entangled singlet-triplet superposition state of 2 qubits ($ψ_{\pm}$ Bell state) can be protected by the interaction, while for the triplet-triplet state ($φ_{\pm}$ Bell state), it is less effective. Thus the former is more suitable for encoding quantum information. △ Less

Submitted 24 February, 2011; v1 submitted 30 June, 2010; originally announced June 2010.

Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells

Authors: N. J. Harmon, W. O. Putikka, R. Joynt

Abstract: Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such as GaAs which do not have long spin lifetimes at room temperature. We show that wurtzite (w) materials, which possess smaller SO coupling due to being… ▽ More Many proposed spintronics devices require mobile electrons at room temperature with long spin lifetimes. One route to achieving this is to use quantum wells with tunable spin-orbit (SO) parameters. Research has focused on zinc-blende materials such as GaAs which do not have long spin lifetimes at room temperature. We show that wurtzite (w) materials, which possess smaller SO coupling due to being low-Z, are better suited for spintronics applications. This leads to predictions of spin lifetimes in w-AlN exceeding 2 ms at helium temperatures and, relevant to spintronic devices, spin lifetimes up to 0.5 $μs$ at room temperature. △ Less

Submitted 10 February, 2011; v1 submitted 1 March, 2010; originally announced March 2010.

Comments: 4 pages, 1 figures. Accepted for publication in Applied Physics Letters

Journal ref: Applied Physics Letters 98, 073108 (2011)

Theory of Electron Spin Relaxation in n-Doped Quantum Wells

Authors: N. J. Harmon, W. O. Putikka, R. Joynt

Abstract: Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110… ▽ More Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spin dynamics of exciton, localized, and conduction spins are important for understanding these systems. We explain experimental behavior by invoking spin exchange between all spin species. By doing so we explain quantitatively and qualitatively the striking and unusual temperature dependence in (110)-GaAs quantum wells. We discuss possible future experiments to resolve the pertinent localized spin relaxation mechanisms. In addition, our analysis allows us to propose possible experimental scenarios that will optimize spin relaxation times in GaAs and CdTe quantum wells. △ Less

Submitted 27 January, 2010; v1 submitted 12 November, 2009; originally announced November 2009.

Comments: Small corrections made. Accepted to Phys. Rev. B. 8 pages, 5 figures

Spin-orbit splittings in Si/SiGe quantum wells

Authors: M. Prada, G. Klimeck, R. Joynt

Abstract: We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the parameters by fitting tight-binding numerical results obtained using the quantitative nanoelectronic… ▽ More We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions from the Rashba and Dresselhaus terms. We then determine the parameters by fitting tight-binding numerical results obtained using the quantitative nanoelectronic modeling tool, NEMO-3D. We describe the relevant parameters as a function of applied electric field and well width in our numerical simulations. For a silicon membrane, we find the bulk Rashba parameter to be linear in field, $α= α^1E_z$ with $α^1 \simeq 2\times$ 10 $^{-5}$nm$^{-2}$. The dominant contribution to the spin-orbit splitting is from Dresselhaus-type terms, and the magnitude for a typical flat SiGe/Si/SiGe quantum well can be as high as 1$μ$eV. △ Less

Submitted 17 August, 2009; originally announced August 2009.

Comments: 9 pages, 9 figures

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Madhu Thalakulam, B. M. Rosemeyer, B. J. Van Bael, E. K. Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes t… ▽ More We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots. △ Less

Submitted 11 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, submitted for publication

Journal ref: Nano Lett., 2009, 9 (9), pp 3234-3238

Spin Relaxation in Isotopically Purified Silicon Quantum Dots

Authors: M. Prada, R. H. Blick, R. Joynt

Abstract: We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isot… ▽ More We investigate spin-flip processes of Si quantum dots due to spin-orbit coupling. We utilize the spin-orbit coupling constants related to bulk and structure inversion asymmetry obtained numerically for two dimensional heterostructures. We find that the spin-flip rate is very sensitive to these coupling constants. We investigate the nuclei-mediated spin-flip process and find the level of the isotope $^{29}$Si concentration for which this mechanism become dominant. △ Less

Submitted 17 April, 2009; originally announced April 2009.

Comments: 5 pages

Theory of Electron Spin Relaxation in ZnO

Authors: N. J. Harmon, W. O. Putikka, R. Joynt

Abstract: Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $τ_{s}$ has been measured by optical orientation experiments, and it shows a surprising non-monotonic behavior with temperature. We explain this behavior by invoking spin exchange… ▽ More Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $τ_{s}$ has been measured by optical orientation experiments, and it shows a surprising non-monotonic behavior with temperature. We explain this behavior by invoking spin exchange between localized and extended states. Interestingly, the effects of spin-orbit coupling are by no means negligible, in spite of the relatively small valence band splitting. This is due to the wurtzite crystal structure of ZnO. Detailed analysis allows us to characterize the impurity binding energies and densities, showing that optical orientation experiments can be used as a characterization tool for semiconductor samples. △ Less

Submitted 18 February, 2009; v1 submitted 21 August, 2008; originally announced August 2008.

Comments: 7 pages, 1 figure: minor changes Accepted by Phys. Rev. B

Singlet-Triplet Relaxation in Two-electron Silicon Quantum Dots

Authors: M. Prada, R. H. Blick, R. Joynt

Abstract: We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the… ▽ More We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation in this regime occurs mainly via virtual states and is due to nuclear hyperfine coupling. In the presence of an external magnetic field perpendicular to the plane of the dot, the spin-orbit coupling is important and virtual states are not required. We find that there can be strong anisotropy for different field directions: parallel magnetic field can increase substantially the relaxation time due to Zeeman splitting, but when the magnetic field is applied perpendicular to the plane, the enhancement of the spin-orbit effect shortens the relaxation time. We find the relaxation to be orders of magnitude longer than for GaAs quantum dots, due to weaker hyperfine and spin-orbit effects. △ Less

Submitted 31 January, 2008; originally announced January 2008.

Comments: 5 pages, 3 figures

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Authors: Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, M. A. Eriksson

Abstract: Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in… ▽ More Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics. △ Less

Submitted 11 December, 2008; v1 submitted 6 August, 2007; originally announced August 2007.

Comments: Published version. Supplementary Information in appendices

Journal ref: Nature Physics v4, pp540-544 (2008)

Spin-Valley Kondo Effect in Multi-electron Silicon Quantum Dots

Authors: Shiueyuan Shiau, Robert Joynt

Abstract: We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in the $\mathcal{N}=4$ one, in contrast to the spin-1/2 Kondo effect, which only occurs at $\mathcal{N}=$ odd. Assuming large orbital level spacings, the energy st… ▽ More We study the spin-valley Kondo effect of a silicon quantum dot occupied by $% \mathcal{N}$ electrons, with $\mathcal{N}$ up to four. We show that the Kondo resonance appears in the $\mathcal{N}=1,2,3$ Coulomb blockade regimes, but not in the $\mathcal{N}=4$ one, in contrast to the spin-1/2 Kondo effect, which only occurs at $\mathcal{N}=$ odd. Assuming large orbital level spacings, the energy states of the dot can be simply characterized by fourfold spin-valley degrees of freedom. The density of states (DOS) is obtained as a function of temperature and applied magnetic field using a finite-U equation-of-motion approach. The structure in the DOS can be detected in transport experiments. The Kondo resonance is split by the Zeeman splitting and valley splitting for double- and triple-electron Si dots, in a similar fashion to single-electron ones. The peak structure and splitting patterns are much richer for the spin-valley Kondo effect than for the pure spin Kondo effect. △ Less

Submitted 2 August, 2007; originally announced August 2007.

Comments: 8 pages, 4 figures, in PRB format. This paper is a sequel to the paper published in Phys. Rev. B 75, 195345 (2007)

Journal ref: Phys. Rev. B 76, 205314 (2007)

Valley Kondo Effect in Silicon Quantum Dots

Authors: Shiue-yuan Shiau, Sucismita Chutia, Robert Joynt

Abstract: Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite Coulomb interaction $U$, whose structure mimics the nonlinear conductance through a dot. The density of states is obtained as a function of temperature and applied… ▽ More Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite Coulomb interaction $U$, whose structure mimics the nonlinear conductance through a dot. The density of states is obtained as a function of temperature and applied magnetic field in the Kondo regime using an equation-of-motion approach. We show that there is a very complex peak structure near the Fermi energy, with several signatures that distinguish this spin-valley Kondo effect from the usual spin Kondo effect seen in GaAs dots. We also show that the valley index is generally not conserved when electrons tunnel into a silicon dot, though the extent of this non-conservation is expected to be sample-dependent. We identify features of the conductance that should enable experimenters to understand the interplay of Zeeman splitting and valley splitting, as well as the dependence of tunneling on the valley degree of freedom. △ Less

Submitted 15 January, 2007; v1 submitted 28 November, 2006; originally announced November 2006.

Journal ref: Phys. Rev. B 75, 195345 (2007)

Controllable valley splitting in silicon quantum devices

Authors: Srijit Goswami, K. A. Slinker, Mark Friesen, L. M. McGuire, J. L. Truitt, Charles Tahan, L. J. Klein, J. O. Chu, P. M. Mooney, D. W. van der Weide, Robert Joynt, S. N. Coppersmith, Mark A. Eriksson

Abstract: Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived sp… ▽ More Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices. △ Less

Submitted 13 July, 2007; v1 submitted 8 November, 2006; originally announced November 2006.

Comments: Published version, including supplementary materials

Journal ref: Nature Physics v3, p41 (2007)

Energy Level Statistics of Quantum Dots

Authors: Chien-Yu Tsau, Diu Nghiem, Robert Joynt, J. Woods Halley

Abstract: We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner- Dyson statistics for weak disorder and interactions, and a Gaussia… ▽ More We investigate the charging energy level statistics of disordered interacting electrons in quantum dots by numerical calculations using the Hartree approximation. The aim is to obtain a global picture of the statistics as a function of disorder and interaction strengths. We find Poisson statistics at very strong disorder, Wigner- Dyson statistics for weak disorder and interactions, and a Gaussian intermediate regime. These regimes are as expected from previous studies and fundamental considerations, but we also find interesting and rather broad crossover regimes. In particular, intermediate between the Gaussian and Poisson regimes we find a two-sided exponential distribution for the energy level spacings. In comparing with experiment, we find that this distribution may be realized in some quantum dots. △ Less

Submitted 14 March, 2007; v1 submitted 3 October, 2006; originally announced October 2006.

Comments: 21 pages 10 figures

Journal ref: J. Phys.: Condens. Matter 19 (2007) 186215

Detection and measurement of the Dzyaloshinskii-Moriya interaction in double quantum dot systems

Authors: Sucismita Chutia, Mark Friesen, Robert Joynt

Abstract: Spins in quantum dots can act as the qubit for quantum computation. In this context we point out that spins on neighboring dots will experience an anisotropic form of the exchange coupling, called the Dzyaloshinskii-Moriya (DM) interaction, which mixes the spin singlet and triplet states. This will have an important effect on both qubit interactions and spin-dependent tunneling. We show that the… ▽ More Spins in quantum dots can act as the qubit for quantum computation. In this context we point out that spins on neighboring dots will experience an anisotropic form of the exchange coupling, called the Dzyaloshinskii-Moriya (DM) interaction, which mixes the spin singlet and triplet states. This will have an important effect on both qubit interactions and spin-dependent tunneling. We show that the interaction depends strongly on the direction of the external field, which gives an unambiguous signature of this effect. We further propose a new experiment using coupled quantum dots to detect and characterize the DM interaction. △ Less

Submitted 9 May, 2006; v1 submitted 5 January, 2006; originally announced January 2006.

Comments: Updated version. Submitted to Physical Review B

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

Authors: K A Slinker, K L M Lewis, C C Haselby, S Goswami, L J Klein, J O Chu, S N Coppersmith, Robert Joynt, R H Blick, Mark Friesen, M A Eriksson

Abstract: We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the t… ▽ More We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied. △ Less

Submitted 16 August, 2005; v1 submitted 3 August, 2005; originally announced August 2005.

Comments: New Fig. 1, submitted to New Journal of Physics

Journal ref: New Journal of Physics v7, p246 (2005)

Electron spin coherence in Si/SiGe quantum wells

Authors: J. L. Truitt, K. A. Slinker, K. L. M. Lewis, D. E. Savage, Charles Tahan, L. J. Klein, Robert Joynt, M. G. Lagally, D. W. van der Weide, S. N. Coppersmith, M. A. Eriksson, A. M. Tyryshkin, J. O. Chu, P. M. Mooney

Abstract: The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measur… ▽ More The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 4 pages, 4 figures, 1 table

Spectroscopy of Valley Splitting in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas

Authors: Srijit Goswami, Mark Friesen, J. L. Truitt, Charles Tahan, L. J. Klein, J. O. Chu, P. M. Mooney, D. W. van der Weide, S. N. Coppersmith, Robert Joynt, M. A. Eriksson

Abstract: The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a li… ▽ More The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a linear magnetic field dependence of the valley splitting, and a strong low-field suppression, consistent with recent theory. The resonance linewidth shows a marked enhancement above $T\simeq 300$ mK. △ Less

Submitted 18 December, 2006; v1 submitted 17 August, 2004; originally announced August 2004.

Comments: Superseded by cond-mat/0611221, published in Nature Physics

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Authors: L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charles Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney

Abstract: We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coul… ▽ More We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV. △ Less

Submitted 20 April, 2004; v1 submitted 16 April, 2004; originally announced April 2004.

Comments: Typos corrected; to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. v84, p4047 (2004)

Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Authors: Charles Tahan, Robert Joynt

Abstract: Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D'yakonov and Perel' (DP) to calculate the electron spin resonance… ▽ More Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D'yakonov and Perel' (DP) to calculate the electron spin resonance linewidth of a silicon 2DEG due to structural inversion asymmetry for arbitrary static magnetic field direction at low temperatures. We estimate the Rashba spin-orbit coupling coefficient in silicon quantum wells and find the $T_{1}$ and $T_{2}$ times of the spins from this mechanism as a function of momentum scattering time, magnetic field, and device-specific parameters. We obtain agreement with existing data for the angular dependence of the relaxation times and show that the magnitudes are consistent with the DP mechanism. We suggest how to increase the relaxation times by appropriate device design. △ Less

Submitted 27 July, 2004; v1 submitted 29 January, 2004; originally announced January 2004.

Comments: Extended derivations and info, fixed typos and refs, updated figs and data. Worth a re-download

Theory of Optical Orientation in n-Type Semiconductors

Authors: W. O. Putikka, R. Joynt

Abstract: Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday rotation and time-resolved Kerr rotation the evolution of the magnetization can be followed as a function of temperature, applied field, do** level and excita… ▽ More Time resolved measurements of magnetization in n-GaAs have revealed a rich array of spin decoherence processes, and have shown that fairly long lifetimes (\sim 100 ns) can be achieved under certain circumstances. In time-resolved Faraday rotation and time-resolved Kerr rotation the evolution of the magnetization can be followed as a function of temperature, applied field, do** level and excitation level. We present a theory for the spin relaxation in n-GaAs based on a set of rate equations for two interacting thermalized subsystems of spins: localized states on donor sites and itinerant states in the conduction band. The conduction band spins relax by scattering from defects or phonons through the D'yakonov-Perel' mechanism, while the localized spins relax by interacting with phonons (when in an applied field) or through the Dzyaloshinskii-Moriya interaction. In this model, numerous features of the data, including puzzling temperature and do** dependences of the relaxation time, find an explanation. △ Less

Submitted 12 May, 2004; v1 submitted 5 September, 2003; originally announced September 2003.

Comments: 4 pages, 2 figures; revised version has a more complete discussion of the Elliott-Yafet and spin-phonon decay mechanisms

Spin Readout and Initialization in a Semiconductor Quantum Dot

Authors: Mark Friesen, Charles Tahan, Robert Joynt, M. A. Eriksson

Abstract: Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted channels for decoherence. Here, we propose a novel spin-charge transduction scheme, converting spin information to orbital information within a single quantum d… ▽ More Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted channels for decoherence. Here, we propose a novel spin-charge transduction scheme, converting spin information to orbital information within a single quantum dot by microwave excitation. The same quantum dot can be used for rapid initialization, gating, and readout. We present detailed modeling of such a device in silicon to confirm its feasibility. △ Less

Submitted 29 March, 2004; v1 submitted 17 April, 2003; originally announced April 2003.

Comments: Published version

Journal ref: Phys. Rev. Lett. v92, p037901 (2004)

Electronic inhomogeneity at magnetic domain walls in strongly-correlated systems

Authors: M. S. Rzchowski, Robert Joynt

Abstract: We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase diagram. This is done by means of a Landau-Ginzburg analysis of a metallic ferromagnetic system near an antiferromagnetic phase boundary. The strong spin gradi… ▽ More We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase diagram. This is done by means of a Landau-Ginzburg analysis of a metallic ferromagnetic system near an antiferromagnetic phase boundary. The strong spin gradients at a wall between domains of different spin orientation drive the formation of a new type of domain wall, where the central core is an insulating antiferromagnet, and connects two metallic ferromagnetic domains. We calculate the charge transport properties of this wall, and find that its resistance is large enough to account for recent experimental results in colossal magnetoresistance materials. The technological implications of this finding for switchable magnetic media are discussed. △ Less

Submitted 11 April, 2003; originally announced April 2003.

Comments: Version submitted to Physical Review Letters, except for minor revisions to references