Showing 1–48 of 48 results for author: Jonker, B T

Ferroelectric modulation of quantum emitters in monolayer WS$_2$

Authors: Sung-Joon Lee, Hsun-Jen Chuang, Andrew Yeats, Kathleen M. McCreary, Dante J. O'Hara, Berend T. Jonker

Abstract: Quantum photonics promises significant advances in secure communications, metrology, sensing and information processing/computation. Single photon sources are fundamental to this endeavor. However, the lack of high quality single photon sources remains a significant obstacle. We present here a new paradigm for the control of single photon emitters (SPEs) and single photon purity by integrating mon… ▽ More Quantum photonics promises significant advances in secure communications, metrology, sensing and information processing/computation. Single photon sources are fundamental to this endeavor. However, the lack of high quality single photon sources remains a significant obstacle. We present here a new paradigm for the control of single photon emitters (SPEs) and single photon purity by integrating monolayer WS$_2$ with the organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)). We demonstrate that the ferroelectric domains in the P(VDF-TrFE) film control the purity of single photon emission from the adjacent WS$_2$. By switching the ferroelectric polarization, we reversibly tune the single photon purity between the semi-classical and quantum light regimes, with single photon purities as high as 94%. This provides another avenue for modulating and encoding quantum photonic information, complementing more complex approaches. This novel multidimensional heterostructure introduces a new avenue for control of quantum emitters by combining the nonvolatile ferroic properties of a ferroelectric with the radiative properties of the zero-dimensional atomic scale emitters embedded in the two-dimensional WS$_2$ semiconductor monolayer. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Discovery of interlayer plasmon polaron in graphene/WS$_2$ heterostructures

Authors: Søren Ulstrup, Yann in 't Veld, Jill A. Miwa, Alfred J. H. Jones, Kathleen M. McCreary, Jeremy T. Robinson, Berend T. Jonker, Simranjeet Singh, Roland J. Koch, Eli Rotenberg, Aaron Bostwick, Chris Jozwiak, Malte Rösner, Jyoti Katoch

Abstract: Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge tran… ▽ More Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge transport, surface reactivity, thermoelectric and optical properties, as observed in a variety of crystals and interfaces composed of polar materials [2-6]. Similarly, when oscillations of the charge density couple to conduction electrons the more elusive plasmon polaron emerges [7], which has been detected in electron-doped semiconductors [8-10]. However, the exploration of polaronic effects on low energy excitations is still in its infancy in two-dimensional (2D) materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of SL WS$_2$. By using micro-focused angle-resolved photoemission spectroscopy (microARPES) during in situ do** of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the SL WS$_2$ conduction band minimum (CBM). Our results are explained by an effective many-body model in terms of a coupling between SL WS$_2$ conduction electrons and graphene plasmon modes. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides (TMDs) [11-15]. △ Less

Submitted 31 August, 2023; originally announced August 2023.

Comments: 25 pages, 9 figures including Supporting Information

Proximity-enhanced valley Zeeman splitting at the WS$_2$/graphene interface

Authors: Paulo E. Faria Junior, Thomas Naimer, Kathleen M. McCreary, Berend T. Jonker, Jonathan J. Finley, Scott A. Crooker, Jaroslav Fabian, Andreas V. Stier

Abstract: The valley Zeeman physics of excitons in monolayer transition metal dichalcogenides provides valuable insight into the spin and orbital degrees of freedom inherent to these materials. Being atomically-thin materials, these degrees of freedom can be influenced by the presence of adjacent layers, due to proximity interactions that arise from wave function overlap across the 2D interface. Here, we re… ▽ More The valley Zeeman physics of excitons in monolayer transition metal dichalcogenides provides valuable insight into the spin and orbital degrees of freedom inherent to these materials. Being atomically-thin materials, these degrees of freedom can be influenced by the presence of adjacent layers, due to proximity interactions that arise from wave function overlap across the 2D interface. Here, we report 60 T magnetoreflection spectroscopy of the A- and B- excitons in monolayer WS$_2$, systematically encapsulated in monolayer graphene. While the observed variations of the valley Zeeman effect for the A- exciton are qualitatively in accord with expectations from the bandgap reduction and modification of the exciton binding energy due to the graphene-induced dielectric screening, the valley Zeeman effect for the B- exciton behaves markedly different. We investigate prototypical WS$_2$/graphene stacks employing first-principles calculations and find that the lower conduction band of WS$_2$ at the $K/K'$ valleys (the $CB^-$ band) is strongly influenced by the graphene layer on the orbital level. This leads to variations in the valley Zeeman physics of the B- exciton, consistent with the experimental observations. Our detailed microscopic analysis reveals that the conduction band at the $Q$ point of WS$_2$ mediates the coupling between $CB^-$ and graphene due to resonant energy conditions and strong coupling to the Dirac cone. Our results therefore expand the consequences of proximity effects in multilayer semiconductor stacks, showing that wave function hybridization can be a multi-step process with different bands mediating the interlayer interactions. Such effects can be exploited to resonantly engineer the spin-valley degrees of freedom in van der Waals and moiré heterostructures. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Comments: 14 pages, 6 figures, 3 tables

Journal ref: 2D Materials 10, 034002 (2023)

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

Authors: Zachariah Hennighausen, Jisoo Moon, Kathleen M. McCreary, Connie H. Li, Olaf M. J. van `t Erve, Berend T. Jonker

Abstract: The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions provide a path to new properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi… ▽ More The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions provide a path to new properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi2Se3/WS2 heterostructures, where the Bi2Se3 A1(3) surface phonon, a mode particularly susceptible to electron-phonon coupling, is imprinted onto the excitonic emission of the WS2. The exciton-phonon bound state (or exciton-phonon quasiparticle) presents itself as evenly separated peaks superposed on the WS2 excitonic photoluminescence spectrum, whose periodic spacing corresponds to the A1(3) surface phonon energy. Low-temperature polarized Raman spectroscopy of Bi2Se3 reveals intense surface phonons and local symmetry breaking that allows the A1(3) surface phonon to manifest in otherwise forbidden scattering geometries. Our work advances knowledge of the complex interlayer van der Waals interactions, and facilitates technologies that combine the distinctive transport and optical properties from separate materials into one device for possible spintronics, valleytronics, and quantum computing applications. △ Less

Submitted 5 January, 2023; originally announced January 2023.

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

Authors: Zachariah Hennighausen, Bethany M. Hudak, Madeleine Phillips, Jisoo Moon, Kathleen M. McCreary, Hsun-Jen Chuang, Matthew R. Rosenberger, Berend T. Jonker, Connie H. Li, Rhonda M. Stroud, Olaf M. van't Erve

Abstract: Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nano… ▽ More Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase, and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion at room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling submicron features (e.g. pixels), and are long-term stable for more than 221 days. Our work suggests few nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and submicron spatial resolution. △ Less

Submitted 13 March, 2022; originally announced March 2022.

Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature

Authors: Zachariah Hennighausen, Darshana Wickramaratne, Kathleen M. McCreary, Bethany M. Hudak, Todd Brintlinger, Hsun-Jen Chuang, Mehmet A. Noyan, Berend T. Jonker, Rhonda M. Stroud, Olaf M. vant Erve

Abstract: Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence… ▽ More Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of x161), peak position (38.4meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762uW) in ambient. Changes are spatially confined to the laser spot, enabling submicron (814nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs. non-radiative recombination pathways, where oxygen absorption leads to brightening, and desorption to darkening. △ Less

Submitted 15 February, 2022; originally announced February 2022.

Comments: Published: ACS Appl. Mater. Interfaces 2022

Magneto-Optical Measurements of the Negatively Charged 2$s$ Exciton in WSe$_2$

Authors: J. C. Sell, J. R. Vannucci, D. G. Suarez-Forero, B. Cao, D. W. Session, H. -J. Chuang, K. M. McCreary, M. R. Rosenberger, B. T. Jonker, S. Mittal, M. Hafezi

Abstract: Monolayer transition metal dichalcogenides host a variety of optically excited quasiparticles species that stem from two-dimensional confinement combined with relatively large carrier effective masses and reduced dielectric screening. The magnetic response of these quasiparticles gives information on their spin and valley configurations, nuanced carrier interactions, and insight into the underlyin… ▽ More Monolayer transition metal dichalcogenides host a variety of optically excited quasiparticles species that stem from two-dimensional confinement combined with relatively large carrier effective masses and reduced dielectric screening. The magnetic response of these quasiparticles gives information on their spin and valley configurations, nuanced carrier interactions, and insight into the underlying band structure. Recently, there have been several reports of 2$s$/3$s$ charged excitons in TMDs, but very little is still known about their response to external magnetic fields. Using photoluminescence excitation spectroscopy, we observe the presence of the 2$s$ charged exciton and report for the first time its response to an applied magnetic field. We benchmark this response against the neutral exciton and find that both the 2$s$ neutral and charged excitons exhibit similar behavior with g-factors of g$_{\rm{X_0^{2s}}}$=-5.20$\pm$0.11 and g$_{\rm{X_-^{2s}}}$=-4.98$\pm$0.11, respectively. △ Less

Submitted 29 August, 2022; v1 submitted 13 February, 2022; originally announced February 2022.

Comments: J.C. Sell and J.R. Vannucci contributed equally to this work

Journal ref: Phys. Rev. B 106, L081409 (2022)

Nanoscale Optical Imaging of 2D Semiconductor Stacking Orders by Exciton-Enhanced Second Harmonic Generation

Authors: Kaiyuan Yao, Shuai Zhang, Emanuil Yanev, Kathleen McCreary, Hsun-Jen Chuang, Matthew R. Rosenberger, Thomas Darlington, Andrey Krayev, Berend T. Jonker, James C. Hone, D. N. Basov, P. James Schuck

Abstract: Second harmonic generation (SHG) is a nonlinear optical response arising exclusively from broken inversion symmetry in the electric-dipole limit. Recently, SHG has attracted widespread interest as a versatile and noninvasive tool for characterization of crystal symmetry and emerging ferroic or topological orders in quantum materials. However, conventional far-field optics is unable to probe local… ▽ More Second harmonic generation (SHG) is a nonlinear optical response arising exclusively from broken inversion symmetry in the electric-dipole limit. Recently, SHG has attracted widespread interest as a versatile and noninvasive tool for characterization of crystal symmetry and emerging ferroic or topological orders in quantum materials. However, conventional far-field optics is unable to probe local symmetry at the deep subwavelength scale. Here, we demonstrate near-field SHG imaging of 2D semiconductors and heterostructures with the spatial resolution down to 20 nm using a scattering-type nano-optical apparatus. We show that near-field SHG efficiency is greatly enhanced by excitons in atomically thin transition metal dichalcogenides. Furthermore, by correlating nonlinear and linear scattering-type nano-imaging, we resolve nanoscale variations of interlayer stacking order in bilayer WSe2, and reveal the stacking-tuned excitonic light-matter-interactions. Our work demonstrates nonlinear optical interrogation of crystal symmetry and structure-property relationships at the nanometer length scales relevant to emerging properties in quantum materials. △ Less

Submitted 12 November, 2021; originally announced November 2021.

Stacking-Dependent Optical Properties in Bilayer WSe2

Authors: Kathleen M. McCreary, Madeleine Phillips, Hsun-Jen Chuang, Darshana Wickramaratne, Matthew Rosenberger, C. Stephen Hellberg, Berend T. Jonker

Abstract: The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 homobilayers with 2H and 3R stacking using photoluminescence, Raman spectroscopy, and reflectance contrast measurements under ambient and cryogenic temperatures. Clear stacking- dependent differences are evident for all t… ▽ More The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 homobilayers with 2H and 3R stacking using photoluminescence, Raman spectroscopy, and reflectance contrast measurements under ambient and cryogenic temperatures. Clear stacking- dependent differences are evident for all temperatures, with both photoluminescence and reflectance contrast spectra exhibiting a blue shift in spectral features in 2H compared to 3R bilayers. Density functional theory (DFT) calculations elucidate the source of the variations and the fundamental differences between 2H and 3R stackings. DFT finds larger energies for both A and B excitonic features in 2H than in 3R, consistent with experimental results. In both stacking geometries, the intensity of the dominant A1g Raman mode exhibits significant changes as a function of laser excitation wavelength. These variations in intensity are intimately linked to the stacking- and temperature-dependent optical absorption through resonant enhancement effects. The strongest enhancement is achieved when the laser excitation coincides with the C excitonic feature, leading to the largest Raman intensity under 514 nm excitation in 2H stacking and at 520 nm in 3R stacked WSe2 bilayers. △ Less

Submitted 10 November, 2021; originally announced November 2021.

Journal ref: Nanoscale, 2022, 14, 147

Visualizing band structure hybridization and superlattice effects in twisted MoS$_2$/WS$_2$ heterobilayers

Authors: Alfred J. H. Jones, Ryan Muzzio, Sahar Pakdel, Deepnarayan Biswas, Davide Curcio, Nicola Lanatà, Philip Hofmann, Kathleen M. McCreary, Berend T. Jonker, Kenji Watanabe, Takashi Taniguchi, Simranjeet Singh, Roland J. Koch, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Jill A. Miwa, Jyoti Katoch, Søren Ulstrup

Abstract: A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band… ▽ More A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS$_2$ and WS$_2$ with twist angles of $(2.0 \pm 0.5)^{\circ}$, $(13.0 \pm 0.5)^{\circ}$, and $(20.0 \pm 0.5)^{\circ}$ and investigate the differences in their electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS$_2$ and WS$_2$ electronic states at the $\bar{\mathrmΓ}$-point of the Brillouin zone, leading to a transition from a direct bandgap in the single-layer to an indirect gap in the heterostructure. Replicas of the hybridized states are observed at the centre of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Comments: 31 pages, 6 figures in the main text and 5 figures in the supporting information

Journal ref: 2D Mater. 9 015032 (2022)

Emergent electric field control of phase transformation in oxide superlattices

Authors: Di Yi, Yujia Wang, Olaf M. J. van 't Erve, Liubin Xu, Hongtao Yuan, Michael J. Veit, Purnima P. Balakrishnan, Yongseong Choi, Alpha T. N'Diaye, Padraic Shafer, Elke Arenholz, Alexander Grutter, Haixuan Xu, Pu Yu, Berend T. Jonker, Yuri Suzuki

Abstract: Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (T… ▽ More Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (TMOs) provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized TMO that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up a new class of materials for voltage-controlled functionality. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Nat Commun 11, 902 (2020)

Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

Authors: Matthew R. Rosenberger, Hsun-Jen Chuang, Madeleine Phillips, Vladimir P. Oleshko, Kathleen M. McCreary, Saujan V. Sivaram, C. Stephen Hellberg, Berend T. Jonker

Abstract: Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van der Waals heterostructures (vdWH). Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties. For TMD vdWH, twist angle has been treated solely through the use of ri… ▽ More Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van der Waals heterostructures (vdWH). Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties. For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here we demonstrate that vdWH of MoSe2/WSe2 and MoS2/WS2 at twist angles less than 1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior work. Using conductive atomic force microscopy (CAFM), we show that the stacking orientation of the two TMD crystals has a profound impact on the atomic reconstruction, consistent with recent theoretical work on graphene/graphene and MoS2/MoS2 structures and experimental work on graphene bilayers and hBN/graphene vdWH. Transmission electron microscopy (TEM) provides additional evidence of atomic reconstruction in MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra from reconstructed vdWH. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provides fundamental insight into the behavior of this important class of heterostructures. △ Less

Submitted 27 November, 2019; originally announced November 2019.

Comments: 22 pages, 3 figures

Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition

Authors: Ioannis Paradisanos, Kathleen M. McCreary, Davoud Adinehloo, Leonidas Mouchliadis, Jeremy T. Robinson, Hsun-Jen Chuang, Aubrey T. Hanbicki, Vasili Perebeinos, Berend T. Jonker, Emmanuel Stratakis, George Kioseoglou

Abstract: We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature depe… ▽ More We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature dependent depolarization (i.e. decrease of polarization with increasing temperature), with polarization degrees reaching 24% at room temperature under near-resonant excitation. This contrasts to hBN- encapsulated WS2, which exhibits a room temperature polarization degree of only 11%. The observed low depolarization rate in WS2/Gr heterostructure is attributed to the nearly temperature independent scattering rate due to phonons and fast charge and energy transfer processes from WS2 to graphene. Significant variations in the degree of polarization are also observed at 4K between the different heterostructure configurations. Intervalley hole scattering in the valence band proximity between the K and Γ points of WS2 is sensitive to the immediate environment, leading to the observed variations. △ Less

Submitted 1 December, 2020; v1 submitted 11 October, 2019; originally announced October 2019.

Comments: 35 pages, 12 figures

Journal ref: Appl. Phys. Lett. 116, 203102 (2020)

Direct observation of minibands in twisted heterobilayers

Authors: Søren Ulstrup, Roland J. Koch, Simranjeet Singh, Kathleen M. McCreary, Berend T. Jonker, Jeremy T. Robinson, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Jyoti Katoch, Jill A. Miwa

Abstract: Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed… ▽ More Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 $μ$m, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS$_2$ at variable interlayer twist angles ($θ$). Minibands are directly observed for $θ= 2.5^{\circ}$ in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of $θ= 26.3^{\circ}$. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12]. △ Less

Submitted 14 April, 2019; originally announced April 2019.

Comments: Main manuscript: 14 pages, 4 figures. Supporting information: 8 pages, 5 figures

Journal ref: Science Advances 03 Apr 2020: Vol. 6, no. 14, eaay6104

Correspondence: Reply to "On the understanding of current-induced spin polarization of 3D topological insulators"

Authors: C. H. Li, O. M. J. van t Erve, S. Rajput, L. Li, B. T. Jonker

Abstract: We reported the first spin potentiometric measurement to electrically detect spin polarization arising from spin-momentum locking in topological insulator (TI) surface states using ferromagnet/tunnel barrier contacts [1]. This method has been adopted to measure the current generated spin in other TI systems [2-10], albeit with conflicting signs of the measured spin voltage [1,2,4,6-10]. Tian et al… ▽ More We reported the first spin potentiometric measurement to electrically detect spin polarization arising from spin-momentum locking in topological insulator (TI) surface states using ferromagnet/tunnel barrier contacts [1]. This method has been adopted to measure the current generated spin in other TI systems [2-10], albeit with conflicting signs of the measured spin voltage [1,2,4,6-10]. Tian et al. wish to use their model as presented in Ref. [4] to determine the sign of the induced spin polarization, and thereby determine whether the claims of various groups to have sampled the topologically protected surface states in bulk TIs are correct. The central point of our Reply is that the model as presented is incapable of doing so because it fails to include separate physical contributions which independently effect the sign of the spin polarization measured. △ Less

Submitted 8 April, 2019; originally announced April 2019.

Comments: 11 pages, 2 figures. arXiv admin note: substantial text overlap with arXiv:1810.00757

Imaging microscopic electronic contrasts at the interface of single-layer WS$_2$ with oxide and boron nitride substrates

Authors: Søren Ulstrup, Roland J. Koch, Daniel Schwarz, Kathleen M. McCreary, Berend T. Jonker, Simranjeet Singh, Aaron Bostwick, Eli Rotenberg, Chris Jozwiak, Jyoti Katoch

Abstract: The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS$_2$ stacked on hBN, SiO$_2$ and TiO$_2$ substrates. Using work function and X-ray absorp… ▽ More The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS$_2$ stacked on hBN, SiO$_2$ and TiO$_2$ substrates. Using work function and X-ray absorption imaging we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic band gaps and electron affinities from the measured valence band offsets of WS$_2$ and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials. △ Less

Submitted 25 March, 2019; originally announced March 2019.

Comments: 5 pages, 5 figures, 1 table

Journal ref: Appl. Phys. Lett. 114, 151601 (2019)

A- and B-Exciton Photoluminescence Intensity Ratio as a Measure of Sample Quality for Transition Metal Dichalcogenide Monolayers

Authors: Kathleen M. McCreary, Aubrey T. Hanbicki, Saujan V. Sivaram, Berend T. Jonker

Abstract: The photoluminescence (PL) in monolayer transition metal dichalcogenides (TMDs) is dominated by recombination of electrons in the conduction band with holes in the spin-orbit split valence bands, and there are two distinct emission features referred to as the A-peak (ground state exciton) and B-peak (higher spin-orbit split state). The intensity ratio of these two features varies widely and severa… ▽ More The photoluminescence (PL) in monolayer transition metal dichalcogenides (TMDs) is dominated by recombination of electrons in the conduction band with holes in the spin-orbit split valence bands, and there are two distinct emission features referred to as the A-peak (ground state exciton) and B-peak (higher spin-orbit split state). The intensity ratio of these two features varies widely and several contradictory interpretations have been reported. We analyze the room temperature PL from MoS2, MoSe2, WS2, and WSe2 monolayers and show that these variations arise from differences in the non-radiative recombination associated with defect densities. Hence, the relative intensities of the A- and B-emission features can be used to qualitatively asses the non-radiative recombination, and thus the quality of the sample. A low B/A ratio is indicative of low defect density and high sample quality. Emission from TMD monolayers is governed by unique optical selection rules which make them promising materials for valleytronic operations. We observe a notably higher valley polarization in the B-exciton relative to the A-exciton. The high polarization is a consequence of the shorter B-exciton lifetime resulting from rapid relaxation of excitons from the B-exciton to the A-exciton of the valence band. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Comments: Final version is published online at APL Materials

Journal ref: APL Materials 6, 111106 (2018)

Electrical detection of current generated spin in topological insulator surface states: Role of interface resistance

Authors: Connie H. Li, Olaf M. J. van t Erve, Chenhui Yan, Lian Li, Berry T. Jonker

Abstract: Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization of the ferromagnet is measured as a voltage. However, opposing signs of the spin voltage have been reported, which had been tentatively attributed to the coexist… ▽ More Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization of the ferromagnet is measured as a voltage. However, opposing signs of the spin voltage have been reported, which had been tentatively attributed to the coexistence of trivial two-dimensional electron gas states on the TI surface which may exhibit opposite current-induced polarization than that of the TI Dirac surface states. Models based on electrochemical potential have been presented to determine the sign of the spin voltage expected for the TI surface states. However, these models neglect critical experimental parameters which also affect the sign measured. Here we present a Mott two-spin current resistor model which takes into account these parameters such as spin-dependent interface resistances, and show that such inclusion can lead to a crossing of the voltage potential profiles for the spin-up and spin-down electrons within the channel, which can lead to measured spin voltages of either sign. These findings offer a resolution of the ongoing controversy regarding opposite signs of spin signal reported in the literature, and highlight the importance of including realistic experimental parameters in the model. △ Less

Submitted 18 April, 2019; v1 submitted 1 October, 2018; originally announced October 2018.

Comments: 17 pages, 4 figures, Scientific Report, in press

Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure

Authors: Aubrey T. Hanbicki, Hsun-Jen Chuang, Matthew R. Rosenberger, C. Stephen Hellberg, Saujan V. Sivaram, Kathleen M. McCreary, I. I. Mazin, Berend T. Jonker

Abstract: An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as the transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer excitons (ILEs), spatially indirect, bound electron-hole pairs with the electron in one TMD layer and the hole in an adjacent layer. We are able to clearly resol… ▽ More An emerging class of semiconductor heterostructures involves stacking discrete monolayers such as the transition metal dichalcogenides (TMDs) to form van der Waals heterostructures. In these structures, it is possible to create interlayer excitons (ILEs), spatially indirect, bound electron-hole pairs with the electron in one TMD layer and the hole in an adjacent layer. We are able to clearly resolve two distinct emission peaks separated by 24 meV from an ILE in a MoSe2/WSe2 heterostructure fabricated using state-of-the-art preparation techniques. These peaks have nearly equal intensity, indicating they are of common character, and have opposite circular polarizations when excited with circularly polarized light. Ab initio calculations successfully account for these observations - they show that both emission features originate from excitonic transitions that are indirect in momentum space, are split by spin-orbit coupling, and that including interlayer hybridization is essential in correctly describing the ILE transition. Although well separated in momentum space, we find that in real space the electron has significant weight in both the MoSe2 and WSe2 layers, contrary to the commonly assumed model. This is a significant consideration for understanding the static and dynamic properties of TMD heterostructures. △ Less

Submitted 14 February, 2018; originally announced February 2018.

Comments: 17 page manuscript with 4 figures and 44 references, 22 page supplement with 20 figures and 20 references

Journal ref: ACS Nano 12, 5, 4719 (2018)

Understanding Variations in Circularly Polarized Photoluminescence in Monolayer Transition Metal Dichalcogenides

Authors: Kathleen M. McCreary, Marc Currie, Aubrey T. Hanbicki, Hsun-Jen Chuang, Berend T. Jonker

Abstract: Monolayer transition metal dichalcogenides are promising materials for valleytronic operations. They exhibit two inequivalent valleys in the Brillouin zone, and the valley populations can be directly controlled and determined using circularly polarized optical excitation and emission. The photoluminescence polarization reflects the ratio of the two valley populations. A wide range of values for th… ▽ More Monolayer transition metal dichalcogenides are promising materials for valleytronic operations. They exhibit two inequivalent valleys in the Brillouin zone, and the valley populations can be directly controlled and determined using circularly polarized optical excitation and emission. The photoluminescence polarization reflects the ratio of the two valley populations. A wide range of values for the degree of circularly polarized emission, Pcirc, has been reported for monolayer WS2, although the reasons for the disparity are unclear. Here we optically populate one valley, and measure Pcirc to explore the valley population dynamics at room temperature in a large number of monolayer WS2 samples synthesized via chemical vapor deposition. Under resonant excitation, Pcirc ranges from 2% to 32%, and we observe a pronounced inverse relationship between photoluminescence (PL) intensity and Pcirc. High quality samples exhibiting strong PL and long exciton relaxation time exhibit a low degree of valley polarization, and vice versa. This behavior is also demonstrated in monolayer WSe2 samples and transferred WS2, indicating that this correlation may be more generally observed and account for the wide variations reported for Pcirc. Time resolved PL provides insight into the role of radiative and non-radiative contributions to the observed polarization. Short non-radiative lifetimes result in a higher measured polarization by limiting opportunity for depolarizing scattering events. △ Less

Submitted 31 July, 2017; originally announced September 2017.

Journal ref: ACS Nano 11, Article number: 7988 (2017)

Giant spin-splitting and gap renormalization driven by trions in single-layer WS$_2$/h-BN heterostructures

Authors: Jyoti Katoch, Søren Ulstrup, Roland J. Koch, Simon Moser, Kathleen M. McCreary, Simranjeet Singh, **song Xu, Berend T. Jonker, Roland K. Kawakami, Aaron Bostwick, Eli Rotenberg, Chris Jozwiak

Abstract: In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and lattice symmetry-induced spin and valley degrees of freedom. Combining single-layer (SL) TMDs with other 2D materials in van der Waals heterostructures offers a… ▽ More In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable band gaps and strongly bound excitons and trions emerge from strong many-body effects, beyond spin-orbit coupling- and lattice symmetry-induced spin and valley degrees of freedom. Combining single-layer (SL) TMDs with other 2D materials in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these many-body effects via engineered interlayer interactions. Here, we employ micro-focused angle-resolved photoemission spectroscopy (microARPES) and in-situ surface do** to manipulate the electronic structure of SL WS$_2$ on hexagonal boron nitride (WS$_2$/h-BN). Upon electron do**, we observe an unexpected giant renormalization of the SL WS$_2$ valence band (VB) spin-orbit splitting from 430~meV to 660~meV, together with a band gap reduction of at least 325~meV, attributed to the formation of trionic quasiparticles. These findings suggest that the electronic, spintronic and excitonic properties are widely tunable in 2D TMD/h-BN heterostructures, as these are intimately linked to the quasiparticle dynamics of the materials. △ Less

Submitted 31 January, 2018; v1 submitted 13 May, 2017; originally announced May 2017.

Comments: 14 pages, 4 figures. Address correspondence to [email protected] or [email protected]

Journal ref: Nature Physics, Advance Online Publication, 2018

Comment on Absence of detectable current-induced magneto-optical Kerr effects in Pt, Ta and W Appl. Phys. Lett. 109, 172402 (2016)

Authors: O. M. J. van t Erve, A. T. Hanbicki, K. M. McCreary, C. H. Li, B. T. Jonker

Abstract: We recently reported measurements of spin polarization in W and Pt thin films produced by the spin Hall effect (SHE) using a magneto-optic Kerr effect (MOKE) system based on crossed polarizers that detects changes in light intensity. Riego et al used a generalized magneto-optical ellipsometry system that in principle can distinguish pure optical reflectivity from magneto-optic signals, but were un… ▽ More We recently reported measurements of spin polarization in W and Pt thin films produced by the spin Hall effect (SHE) using a magneto-optic Kerr effect (MOKE) system based on crossed polarizers that detects changes in light intensity. Riego et al used a generalized magneto-optical ellipsometry system that in principle can distinguish pure optical reflectivity from magneto-optic signals, but were unable to detect SHE polarization in their nominally W, Ta and Pt films. They argued that our results are spurious and likely due to resistive heating which temporally modulates the film temperature and reflectivity, and that any SHE polarization is too small to be detected in metal films. In this comment, we argue that our original results are correct as presented, and discuss why △ Less

Submitted 10 March, 2017; originally announced March 2017.

Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

Authors: Søren Ulstrup, Jyoti Katoch, Roland J. Koch, Daniel Schwarz, Simranjeet Singh, Kathleen M. McCreary, Hyang Keun Yoo, **song Xu, Berend T. Jonker, Roland K. Kawakami, Aaron Bostwick, Eli Rotenberg, Chris Jozwiak

Abstract: There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for e… ▽ More There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials. △ Less

Submitted 26 October, 2016; originally announced October 2016.

Comments: 28 pages, 5 figures

Journal ref: published in ACS Nano 2016

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2

Authors: Kathleen M. McCreary, Aubrey T. Hanbicki, Simranjeet Singh, Roland K. Kawakami, Glenn G. Jernigan, Masa Ishigami, Amy Ng, Todd H. Brintlinger, Rhonda M. Stroud, Berend T. Jonker

Abstract: We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). I… ▽ More We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties. △ Less

Submitted 21 October, 2016; originally announced October 2016.

Comments: final manuscript available at Scientific Reports

Journal ref: Scientific Reports 6, Article number: 35154 (2016)

Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

Authors: Connie H. Li, Olaf M. J. van t Erve, Shivani Rajput, Lian Li, Berry T. Jonker

Abstract: Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion that exist as spin-split pairs due to Rashba spin-orbit coupling (SOC). A bias current is expected to generate spin polarizati… ▽ More Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion that exist as spin-split pairs due to Rashba spin-orbit coupling (SOC). A bias current is expected to generate spin polarization in both systems arising from their helical spin-momentum locking. However, their induced spin polarization is expected to be different in both magnitude and sign. Here, we compare spin potentiometric measurements of bias current-generated spin polarization in Bi2Se3(111) films where Dirac surface states coexist with trivial 2DEG states, with identical measurements on InAs(001) samples where only trivial 2DEG states are present. We observe spin polarization arising from spin-momentum locking in both cases, with opposite signs of the spin voltage. We present a model based on spin dependent electrochemical potentials to directly derive the signs expected for the TI surface states, and unambiguously show that the dominant contribution to the current-generated spin polarization measured in the TI is from the Dirac surface states. This direct electrical access of the helical spin texture of Dirac and Rashba 2DEG states is an enabling step towards the electrical manipulation of spins in next generation TI and SOC based quantum devices. △ Less

Submitted 23 May, 2016; originally announced May 2016.

Magneto-reflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

Authors: Andreas V. Stier, Kathleen M. McCreary, Berend T. Jonker, Junichiro Kono, Scott A. Crooker

Abstract: We describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 tesla. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magneto-reflection spectra from atomically thin tungsten disulphide (WS$_2$) are presented. The d… ▽ More We describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 tesla. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magneto-reflection spectra from atomically thin tungsten disulphide (WS$_2$) are presented. The data clearly reveal not only the valley Zeeman effect in these 2D semiconductors, but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Finally, we present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of the exciton binding energy in this new family of monolayer semiconductors. △ Less

Submitted 22 March, 2016; originally announced March 2016.

Comments: PCSI-43 conference (Jan. 2016; Palm Springs, CA)

Journal ref: J. Vac. Sci. Tech. B 34, 04J102 (2016)

Imaging Spin Dynamics in Monolayer WS2 by Time-Resolved Kerr Rotation Microscopy

Authors: Elizabeth J. Bushong, Michael Newburger, Yunqiu, Luo, Kathleen M. McCreary, Simranjeet Singh, Iwan B. Martin, Edward J. Cichewicz Jr., Berend T. Jonker, Roland K. Kawakami

Abstract: Monolayer transition metal dichalcogenides (TMD) have immense potential for future spintronic and valleytronic applications due to their two-dimensional nature and long spin/valley lifetimes. We investigate the origin of these long-lived states in n-type WS2 using time-resolved Kerr rotation microscopy and photoluminescence microscopy with ~1 micron spatial resolution. Comparing the spatial depend… ▽ More Monolayer transition metal dichalcogenides (TMD) have immense potential for future spintronic and valleytronic applications due to their two-dimensional nature and long spin/valley lifetimes. We investigate the origin of these long-lived states in n-type WS2 using time-resolved Kerr rotation microscopy and photoluminescence microscopy with ~1 micron spatial resolution. Comparing the spatial dependence of the Kerr rotation signal and the photoluminescence reveals a correlation with neutral exciton emission, which is likely due to the transfer of angular momentum to resident conduction electrons with long spin/valley lifetimes. In addition, we observe an unexpected anticorrelation between the Kerr rotation and trion emission, which provides evidence for the presence of long-lived spin/valley-polarized dark trions. We also find that the spin/valley polarization in WS2 is robust to magnetic fields up to 700 mT, indicative of spins and valleys that are stabilized with strong spin-orbit fields. △ Less

Submitted 25 August, 2017; v1 submitted 10 February, 2016; originally announced February 2016.

Comments: 27 pages, 10 figures

Journal ref: McCormick et al 2017 2D Mater. https://doi.org/10.1088/2053-1583/aa98ae

Optical control of charged exciton states in tungsten disulfide

Authors: M. Currie, A. T. Hanbicki, G. Kioseoglou, B. T. Jonker

Abstract: A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an enhanced feature on the low energy side of the E12g peak. Photoluminescence and optical reflectivity measurements confirm the existence of the prepared… ▽ More A method is presented for optically preparing WS2 monolayers to luminesce from only the charged exciton (trion) state--completely suppressing the neutral exciton. When isolating the trion state, we observed changes in the Raman A1g intensity and an enhanced feature on the low energy side of the E12g peak. Photoluminescence and optical reflectivity measurements confirm the existence of the prepared trion state. This technique also prepares intermediate regimes with controlled luminescence amplitudes of the neutral and charged exciton. This effect is reversible by exposing the sample to air, indicating the change is mitigated by surface interactions with the ambient environment. This method provides a tool to modify optical emission energy and to isolate physical processes in this and other two-dimensional materials. △ Less

Submitted 4 February, 2016; originally announced February 2016.

Comments: 13 pages, 4 Figures, 32 references

Journal ref: Applied Physics Letters 106, 201907 (2015)

Optical polarization and intervalley scattering in single layers of MoS2 and MoSe2

Authors: George Kioseoglou, Aubrey T. Hanbicki, Marc Currie, Adam L. Friedman, Berend T. Jonker

Abstract: Single layers of MoS2 and MoSe2 were optically pumped with circularly polarized light and an appreciable polarization was initialized as the pump energy was varied. The circular polarization of the emitted photoluminescence was monitored as function of the difference between the excitation energy and the A-exciton emission at the K-point of the Brillouin zone. Our results show a threshold of twice… ▽ More Single layers of MoS2 and MoSe2 were optically pumped with circularly polarized light and an appreciable polarization was initialized as the pump energy was varied. The circular polarization of the emitted photoluminescence was monitored as function of the difference between the excitation energy and the A-exciton emission at the K-point of the Brillouin zone. Our results show a threshold of twice the LA phonon energy, specific to the material, above which phonon-assisted intervalley scattering causes depolarization. In both materials this lead to almost complete depolarization within ~100 meV above the threshold energy. We identify the extra kinetic energy of the exciton (independent of whether it is neutral or charged) as the key parameter for presenting a unifying picture of the depolarization process. △ Less

Submitted 1 February, 2016; originally announced February 2016.

Comments: 14 pages, 5 figures

Anomalous temperature-dependent spin-valley polarization in monolayer WS$_{2}$

Authors: Aubrey T. Hanbicki, George Kioseoglou, Marc Currie, C. Stephen Hellberg, Kathleen M. McCreary, Adam L. Friedman, Berend T. Jonker

Abstract: Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong, phonon-enabled intervalley scattering, as well as multiparticle interactions leading to multiple emission channel… ▽ More Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong, phonon-enabled intervalley scattering, as well as multiparticle interactions leading to multiple emission channels. We prepare single-layer WS$_{2}$ such that the photoluminescence is from either the neutral or charged exciton (trion). After excitation with circularly polarized light, the neutral exciton emission has zero polarization, however, the trion emission has a large polarization (28%) at room temperature. The trion emission also has a unique, non-monotonic temperature dependence that we show is a consequence of the multiparticle nature of the trion. This temperature dependence enables us to determine that coulomb assisted intervalley scattering, electron-hole radiative recombination, and a 3-particle Auger process are the dominant mechanisms at work in this system. Because this dependence involves trion systems, one can use gate voltages to modulate the polarization (or intensity) emitted from TMD structures. △ Less

Submitted 29 December, 2015; originally announced December 2015.

Comments: 26 pages, 4 figures, includes supplementary information

Journal ref: Scientific Reports 6, 18885 (2016)

Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence

Authors: Kathleen M. McCreary, Aubrey T. Hanbicki, Glenn G. Jernigan, James C. Culbertson, Berend T. Jonker

Abstract: Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essential for implementation of technological applications. In this work, we synthesize monolayer WS2 under various controlled conditions and characterize the… ▽ More Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essential for implementation of technological applications. In this work, we synthesize monolayer WS2 under various controlled conditions and characterize the films using photoluminescence, Raman and x-ray photoelectron spectroscopies. We demonstrate that the introduction of hydrogen to the argon carrier gas dramatically improves the optical quality and increases the growth area of WS2, resulting in films exhibiting mm2 coverage. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The stoichiometric WS2 monolayers synthesized using Ar+H2 carrier gas exhibit superior optical characteristics, with photoluminescence emission full width half maximum values below 40 meV and emission intensities nearly an order of magnitude higher than films synthesized in a pure Ar environment. △ Less

Submitted 1 December, 2015; originally announced December 2015.

Comments: recently accepted at Scientific Reports

Journal ref: Scientific Reports 6, Article number: 19159 (2016)

Spin coherence and dephasing of localized electrons in monolayer MoS$_2$

Authors: Luyi Yang, Weibing Chen, Kathleen M. McCreary, Berend T. Jonker, Jun Lou, Scott A. Crooker

Abstract: We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS$_2$. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond-timescale Larmor spin precession signal commensurate with $g$-factor $|g_0|\simeq 1.86$ is observed in several different MoS$_2$ samples grown by chemical vapor deposition. The dephasing ra… ▽ More We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS$_2$. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond-timescale Larmor spin precession signal commensurate with $g$-factor $|g_0|\simeq 1.86$ is observed in several different MoS$_2$ samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a sub-ensemble of localized electron spins having an inhomogeneously-broadened distribution of $g$-factors, $g_0 + Δg$. In contrast to $g_0$, $Δg$ is sample-dependent and ranges from 0.042 to 0.115. △ Less

Submitted 10 November, 2015; originally announced November 2015.

Comments: 5 pages, 4 figures. Accepted and in press, Nano Letters

Journal ref: Nano Letters 15, 8250 (2015)

Exciton Diamagnetic Shifts and Valley Zeeman Effects in Monolayer WS$_2$ and MoS$_2$ to 65 Tesla

Authors: Andreas V. Stier, Kathleen M. McCreary, Berend T. Jonker, Junichiro Kono, Scott A. Crooker

Abstract: We report circularly-polarized optical reflection spectroscopy of monolayer WS$_2$ and MoS$_2$ at low temperatures (4~K) and in high magnetic fields to 65~T. Both the A and the B exciton transitions exhibit a clear and very similar Zeeman splitting of approximately $-$230~$μ$eV/T ($g\simeq -4$), providing the first measurements of the valley Zeeman effect and associated $g$-factors in monolayer tr… ▽ More We report circularly-polarized optical reflection spectroscopy of monolayer WS$_2$ and MoS$_2$ at low temperatures (4~K) and in high magnetic fields to 65~T. Both the A and the B exciton transitions exhibit a clear and very similar Zeeman splitting of approximately $-$230~$μ$eV/T ($g\simeq -4$), providing the first measurements of the valley Zeeman effect and associated $g$-factors in monolayer transition-metal disulphides. These results complement and are compared with recent low-field photoluminescence measurements of valley degeneracy breaking in the monolayer diselenides MoSe$_2$ and WSe$_2$. Further, the very large magnetic fields used in our studies allows us to observe the small quadratic diamagnetic shifts of the A and B excitons in monolayer WS$_2$ (0.32 and 0.11~$μ$eV/T$^2$, respectively), from which we calculate exciton radii of 1.53~nm and 1.16~nm. When analyzed within a model of non-local dielectric screening in monolayer semiconductors, these diamagnetic shifts also constrain and provide estimates of the exciton binding energies (410~meV and 470~meV for the A and B excitons, respectively), further highlighting the utility of high magnetic fields for understanding new 2D materials. △ Less

Submitted 23 October, 2015; originally announced October 2015.

Comments: 9 pages, 5 figures

Journal ref: Nature Communications 7: 10643 (2016)

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Authors: A. T. Hanbicki, M. Currie, G. Kioseoglou, A. L. Friedman, B. T. Jonker

Abstract: Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for… ▽ More Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such fundamental properties as exciton binding energies and band gaps. We report here an experimental determination of exciton excited states and binding energies for monolayer WS2 and WSe2. We observe peaks in the optical reflectivity/absorption spectra corresponding to the ground- and excited-state excitons (1s and 2s states). From these features, we determine lower bounds free of any model assumptions for the exciton binding energies as E2sA - E1sA of 0.83 eV and 0.79 eV for WS2 and WSe2, respectively, and for the corresponding band gaps Eg >= E2sA of 2.90 and 2.53 eV at 4K. Because the binding energies are large, the true band gap is substantially higher than the dominant spectral feature commonly observed with photoluminescence. This information is critical for emerging applications, and provides new insight into these novel monolayer semiconductors. △ Less

Submitted 5 December, 2014; originally announced December 2014.

Comments: 15 page manuscript, 5 figures, 10 page supplemental information

Journal ref: Solid State Communications 203 (2015) 16-20

Electrical injection and detection of spin accumulation in Ge at room temperature

Authors: A. T. Hanbicki, S. -. F. Cheng, R. Goswami, O. M. J. van `t Erve, B. T. Jonker

Abstract: We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We observe significant spin accumulation in the Ge up to room temperature. We observe precessional dephasing of the spin accumulation (the Hanle effect)… ▽ More We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We observe significant spin accumulation in the Ge up to room temperature. We observe precessional dephasing of the spin accumulation (the Hanle effect) in an applied magnetic field for both forward and reverse bias (spin extraction and injection), and determine spin lifetimes and corresponding diffusion lengths for temperatures of 225 K to 300 K. The room temperature spin lifetime increases from τs = 50 ps to 123 ps with decreasing electron concentration, as expected from electron spin resonance work on bulk Ge. The measured spin resistance-area product is in good agreement with values predicted by theory for samples with carrier densities below the metal-insulator transition (MIT), but 100x larger for samples above the MIT. These data demonstrate that the spin accumulation measured occurs in the Ge, although dopant-derived interface or band states may enhance the measured spin voltage above the MIT. We estimate the polarization in the Ge to be on the order of 1%. △ Less

Submitted 17 February, 2012; originally announced February 2012.

Comments: 14 pages, 4 figures

Journal ref: Solid State Communications 152 (2012) 244-248

Comment: "Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal / silicon dioxide contacts" [Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)]

Authors: C. H. Li, O. M. J. van 't Erve, B. T. Jonker

Abstract: In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)). In comparing our measured spin-voltage signal with the value predicted by theory, we followed the analysis of Tran et al, (Phys. Rev. L… ▽ More In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)). In comparing our measured spin-voltage signal with the value predicted by theory, we followed the analysis of Tran et al, (Phys. Rev. Lett. 102, 036601 (2009)), and inadvertently propagated an error found therein. As they note in a recent erratum (arXiv:0810.4770v2), the correct expression for the spin resistance area product from the theory for a sample with a spin diffusion length LSD much less than the contact width or channel thickness (our experimental situation) is given by the product {gamma}^2 {rho} LSD, where {gamma} is the tunneling spin polarization, and {rho} is the resistivity of the semiconductor transport channel. With this correction, our measured spin voltages are much larger than those predicted by theory, rather than in good agreement as we stated. We emphasize that the basic conclusions of our paper are the same - the systematic decrease in electron spin lifetime with increasing electron density demonstrates spin accumulation in the Si channel rather than in interface states. We further show that the measured spin lifetimes are essentially independent of the tunnel barrier material (SiO2, Al2O3, MgO) or the magnetic metal used (Fe, CoFe, NiFe), demonstrating clear correlation of the measured spin lifetime with the character of the Si, and little correlation with the tunnel barrier / interface or magnetic metal. △ Less

Submitted 7 October, 2011; originally announced October 2011.

Comments: Two files: 1) Authors' Comment and 2) Original Nature Commun article

Journal ref: Nature Commun. 2:245 doi:10.1038/ncomms125 (2011)

Electrical spin injection into Si(001) through a SiO2 tunnel barrier

Authors: C. H. Li, G. Kioseoglou, O. M. J. van t Erve, P. E. Thompson, B. T. Jonker

Abstract: We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the… ▽ More We demonstrate spin polarized tunneling from Fe through a SiO2 tunnel barrier into a Si n-i-p heterostructure. Transport measurements indicate that single step tunneling is the dominant transport mechanism. The circular polarization, Pcirc, of the electroluminescence (EL) shows that the tunneling spin polarization reflects Fe majority spin. Pcirc tracks the Fe magnetization, confirming that the spin-polarized electrons radiatively recombining in the Si originate from the Fe. A rate equation analysis provides a lower bound of 30% for the electron spin polarization in the Si at 5 K. △ Less

Submitted 16 October, 2009; originally announced October 2009.

Comments: to appear in Appl. Phys. Lett. Oct. 26, 2009

Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection

Authors: Olaf M. J. van "t Erve, Chaffra Awo-Affouda, Aubrey T. Hanbicki, Connie H. Li, Phillip E. Thompson, Berend T. Jonker

Abstract: We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: (a) by switching the magnetizati… ▽ More We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: (a) by switching the magnetization of the Fe contact, (b) by changing the polarity of the bias on the Fe/Al2O3 (injector) contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself, and (c) by inducing spin precession through application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three terminal device are very similar to those of non-volatile giant magnetoresistance metal spin-valve structures △ Less

Submitted 30 June, 2009; originally announced June 2009.

Comments: accepted for publication in the October issue of Transactions on Electron Devices

Journal ref: IEEE Transactions on Electron Devices, Vol. 56, No 10, p. 2343 Oct 2009

Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory

Authors: Thomas J. Zega, Aubrey T. Hanbicki, Steven C. Erwin, Igor Zutic, George Kioseoglou, Connie H. Li, Berend T. Jonker, Rhonda M. Stroud

Abstract: We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and A… ▽ More We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface. △ Less

Submitted 8 May, 2006; originally announced May 2006.

Comments: 16 pages (including cover), 4 figures

Journal ref: Phys. Rev. Lett. 96, 196101 (2006)

Electrical Spin Pum** of Quantum Dots at Room Temperature

Authors: C. H. Li, G. Kioseoglou, O. M. J. van t Erve, M. E. Ware, D. Gammon, R. M. Stroud, B. T. Jonker, R. Mallory, M. Yasar, A. Petrou

Abstract: We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temper… ▽ More We report electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300 K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid state semiconductor devices. △ Less

Submitted 31 January, 2005; originally announced January 2005.

Comments: 4 figures, accepted by Appl. Phys. Lett

Cross-sectional STM of Mn-doped GaAs: theory and experiment

Authors: J. M. Sullivan, G. I. Boishin, L. J. Whitman, A. T. Hanbicki, B. T. Jonker, S. C. Erwin

Abstract: We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on… ▽ More We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on detailed comparisons of the simulated and experimental images, we identify three types of Mn configurations imaged at the surface: (1) single Mn substitutionals, (2) pairs of Mn substitutionals, and (3) complexes of Mn substitutionals and interstitials. △ Less

Submitted 8 July, 2003; originally announced July 2003.

Comments: 7 journal pages, 6 figures, (preprint with high quality figures available at http://cst-www.nrl.navy.mil/~erwin/mngaasstm/)

Journal ref: Phys. Rev. B 68, 235324 (2003) (6 pages)

Spin Nomenclature for Semiconductors and Magnetic Metals

Authors: B. T. Jonker, A. T. Hanbicki, D. T. Pierce, M. D. Stiles

Abstract: The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron spin, while in magnetic metals it is based on the orientation of the moment. In the rapidly expanding field of spintronics, where both semico… ▽ More The different conventions used in the semiconductor and magnetic metals communities can cause confusion in the context of spin polarization and transport in simple heterostructures. In semiconductors, terminology is based on the orientation of the electron spin, while in magnetic metals it is based on the orientation of the moment. In the rapidly expanding field of spintronics, where both semiconductors and metallic metals are important, some commonly used terms ("spin-up," "majority spin") can have different meanings. Here, we clarify nomenclature relevant to spin transport and optical polarization by relating the common physical observables and "definitions" of spin polarization to the fundamental concept of conservation of angular momentum within a well-defined reference frame. △ Less

Submitted 21 April, 2003; originally announced April 2003.

Comments: 3 pages, 2 figures, 16 references

Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y

Authors: G. Kioseoglou, A. T. Hanbicki, C. H. Li, S. C. Erwin, R. Goswami, B. T. Jonker

Abstract: We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations emp… ▽ More We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization. △ Less

Submitted 12 February, 2003; originally announced February 2003.

Comments: 4 pages, 4 figures, submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 84, 1725 (2004)

Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier

Authors: A. T. Hanbicki, O. M. J. van t Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, A. Petrou

Abstract: Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and… ▽ More Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor. △ Less

Submitted 11 February, 2003; originally announced February 2003.

Comments: 4 pages, 4 figures, submitted to APL

Journal ref: Appl. Phys. Lett. 82, 4092 (2003)

Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

Authors: Y. D. Park, A. T. Hanbicki, J. E. Mattson, B. T. Jonker

Abstract: We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with… ▽ More We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent transport data show that the films are semiconducting in character and n-type as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3. △ Less

Submitted 8 May, 2002; originally announced May 2002.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Lett. 81, 1471 (2002)

Reduction Of Spin Injection Efficiency by Interface Spin Scattering

Authors: R. M. Stroud, A. T. Hanbicki, Y. D. Park, A. G. Petukhov, B. T. Jonker, G. Itskos, G. Kioseoglou, M. Furis, A. Petrou

Abstract: We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering.… ▽ More We report the first experimental demonstration that interface microstructure limits diffusive electrical spin injection efficiency across heteroepitaxial interfaces. A theoretical treatment shows that the suppression of spin injection due to interface defects follows directly from the contribution of the defect potential to the spin-orbit interaction, resulting in enhanced spin-flip scattering. An inverse correlation between spin-polarized electron injection efficiency and interface defect density is demonstrated for ZnMnSe/AlGaAs-GaAs spin-LEDs with spin injection efficiencies of 0 to 85%. △ Less

Submitted 26 October, 2001; originally announced October 2001.

Comments: 13 pages, 5 figures; submitted to PRL

Journal ref: Phys. Rev. Lett. 89, 166602 (2002)

Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor

Authors: Aubrey T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, A. Petrou

Abstract: We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circu… ▽ More We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology. △ Less

Submitted 28 January, 2002; v1 submitted 2 October, 2001; originally announced October 2001.

Comments: 14 pages including 3 figures, version accepted by Applied Physics Letters - A. Hanbicki, et al. Appl. Phys. Lett. 80 (7), p.TBD (2002)

Journal ref: Appl. Phys. Lett 80 (2002) 1240

X-ray absorption spectroscopy study of diluted magnetic semiconductors: Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te)

Authors: Kwanghyun Cho, Hoon Koh, S. -J. Oh, Hyeong-Do Kim, Moonsup Han, J. -H. Park, C. T. Chen, Y. D. Kim, J. -S. Kim, B. T. Jonker

Abstract: We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS) measurements. In order to explain the XAS spectra, we employed a tetragonal cluster model calculation, which includes not only the full ionic multiplet structu… ▽ More We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS) measurements. In order to explain the XAS spectra, we employed a tetragonal cluster model calculation, which includes not only the full ionic multiplet structure but also configuration interaction (CI). The results show that CI is essential to describe the experimental spectra adequately, indicating the strong hybridization between the transition metal 3d and the ligand p orbitals. In the study of Zn1-xMnxY (Y = Se, Te), we also found considerable spectral change in the Mn L2,3-edge XAS spectra for different ligands, confirming the importance of the hybridization effects in these materials. △ Less

Submitted 18 September, 2000; originally announced September 2000.

Comments: This paper consists of 22 pages including 4 figures. This paper is submitted to Physical Review B