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AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
Authors:
N. Buatip,
T. Auzelle,
P. John,
S. Rauwerdink,
M. Sohdi,
M. Saluan,
B. Fernandez,
E. Monroy,
D. Mornex,
C. R. Bowen,
R. Songmuang
Abstract:
In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of invest…
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In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of investigation. Our presented results are utilized to determine the performance figures of merit (FoM) of nanowire-based VINGs, namely the piezoelectric voltage constant (g) for sensing, and the product d g for energy harvesting, where d is the piezoelectric charge constant. By comparison of these metrics with those of freestanding single crystal GaN and quartz substrates, as well as sputtered AlN thin films, we suggest that the nanowires can outperform their rigid counterparts in terms of mechanical sensing and energy generation. This work provides experimental guidelines for understanding the direct piezo-characteristics of VINGs and facilitates a quantitative comparison between nanostructured piezoelectric devices fabricated using different materials or architectures.
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Submitted 1 June, 2024; v1 submitted 15 February, 2024;
originally announced February 2024.
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ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
Authors:
Philipp John,
Achim Trampert,
Duc Van Dinh,
Domenik Spallek,
Jonas Lähnemann,
Vladimir Kaganer,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congrue…
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We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congruent, low-symmetry GaN/ScN interface. The 13.1 % uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN($1\bar{1}00$) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures made of closely lattice-matched GaN, ScN, HfN and ZrN compounds.
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Submitted 1 February, 2024;
originally announced February 2024.
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A comparison between the FENE-P and sPTT constitutive models in Large Amplitude Oscillatory Shear (LAOS)
Authors:
Thomas P John,
Robert J Poole,
Adam Kowalski,
Claudio P Fonte
Abstract:
The FENE-P and sPTT viscoelastic models are widely used for modelling of complex fluids. Although they are derived from distinct micro-structural theories, these models can become mathematically identical in steady and homogeneous flows with a particular choice of the value of the model parameters. However, even with this choice of parameter values, the model responses are known to differ from eac…
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The FENE-P and sPTT viscoelastic models are widely used for modelling of complex fluids. Although they are derived from distinct micro-structural theories, these models can become mathematically identical in steady and homogeneous flows with a particular choice of the value of the model parameters. However, even with this choice of parameter values, the model responses are known to differ from each other in transient flows. In this work, we investigate the responses of the FENE-P and sPTT constitutive models in Large Amplitude Oscillatory Shear (LAOS). In steady-shear, the shear stress scales with the non-dimensional group $Wi/(aL) \ (Wi\sqrtε)$ for the FENE-P (sPTT) model, where $Wi$ is the Weissenberg number, $L^2$ is the limit of extensibility in the FENE-P model ($a$ being $L^2/(L^2-3)$) and $ε$ is the extensibility parameter in the sPTT model. Our numerical and analytical results show that, in LAOS, the FENE-P model only shows this universality for large values of $L^2$ whereas the sPTT model shows this universality for all values of$ε$. In the strongly non-linear region, there is a drastic difference between the responses of the two models, with the FENE-P model exhibiting strong shear stress overshoots which manifest as self-intersecting secondary loops in the viscous Lissajous curves. We quantify the non-linearity exhibited by each constitutive model using the Sequence of Physical Processes framework. Despite the high degree of non-linearity exhibited by the FENE-P model, we also show using fully non-linear 1D simulations that it does not shear band in LAOS within the range of conditions studied.
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Submitted 1 September, 2023; v1 submitted 31 August, 2023;
originally announced August 2023.
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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Authors:
Philipp John,
Mikel Gómez Ruiz,
Len van Deurzen,
Jonas Lähnemann,
Achim Trampert,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of…
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We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of the nanowire elongation rate measured at different temperatures shows that the Al adatom diffusion length is maximised at 1150 °C, which appears to be the optimum growth temperature. However, analysis of the nanowire luminescence shows a steep increase in the deep-level signal already above 1050 °C, associated with O incorporation from the Al$_2$O$_3$ substrate. Comparison with AlN nanowires grown on Si, MgO and SiC substrates suggests that heavy do** of Si and O by interdiffusion from the TiN/substrate interface increases the nanowire internal quantum efficiency, presumably due to the formation of a SiN$_x$ or AlO$_x$ passivation shell. The outdiffusion of Si and O would also cause the formation of the inversion domains observed in the nanowires. It follows that for optoelectronic and piezoelectric applications, optimal AlN nanowire ensembles should be prepared at 1150 °C on TiN/SiC substrates and will require an ex situ surface passivation.
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Submitted 1 February, 2024; v1 submitted 15 June, 2023;
originally announced June 2023.
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Density control of GaN nanowires at the wafer scale using self-assembled SiN$_x$ patches on sputtered TiN(111)
Authors:
Thomas Auzelle,
Miriam Oliva,
Philipp John,
Manfred Ramsteiner,
Lutz Geelhaar,
Oliver Brandt
Abstract:
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we e…
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The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN$_x$ patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by \{100\} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN$_x$ atoms prior to the GaN growth. By varying the amount of pre-deposited SiN$_x$, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN$_x$ patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials.
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Submitted 8 August, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
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Strain-engineering the Schottky barrier and electrical transport on MoS2
Authors:
Ashby Phillip John,
Arya Thenapparambil,
Madhu Thalakulam
Abstract:
Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain making it easier to tune various electrical properties to suit the technology needs. In this work we explore the effect of uniaxial tensile-strain on the electrical…
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Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain making it easier to tune various electrical properties to suit the technology needs. In this work we explore the effect of uniaxial tensile-strain on the electrical transport properties of bi- and few-layered MoS2, a promising 2D semiconductor. Raman shifts corresponding to the in-plane vibrational modes show a redshift with strain indicating a softening of the in-plane phonon modes. Photo luminescence measurements reveal a redshift in the direct and the indirect emission peaks signalling a reduction in the material bandgap. Transport measurements show a substantial enhancement in the electrical conductivity with a high piezoresistive gauge factor of ~ 321 superior to that for Silicon for our bi-layered device. The simulations conducted over the experimental findings reveal a substantial reduction of the Schottky barrier height at the electrical contacts in addition to the resistance of MoS2. Our studies reveal that strain is an important and versatile ingredient to tune the electrical properties of 2D materials and also can be used to engineer high-efficiency electrical contacts for future device engineering.
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Submitted 10 April, 2020;
originally announced April 2020.
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The structure of multi-wall carbon nanotubes: AA' stacked graphene helices
Authors:
Jae-Kap Lee,
Sohyung Lee,
Yong-Il Kim,
**-Gyu Kim,
Kyung-Il Lee,
Jae-Pyoung Ahn,
Bong-Ki Min,
Chung-Jong Yu,
Keun Hwa Chae,
Phillip John
Abstract:
The structure of multi-wall carbon nanotubes has been attributed previously to disordered stacking of the graphene planes.
The structure of multi-wall carbon nanotubes has been attributed previously to disordered stacking of the graphene planes.
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Submitted 26 December, 2012; v1 submitted 10 January, 2012;
originally announced January 2012.
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The role of C2 in nanocrystalline diamond growth
Authors:
J. R. Rabeau,
Y. Fan,
P. John,
J. I. B. Wilson
Abstract:
This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapour deposition (CVD) reactor. NCD films were grown using Ar/H2/CH4 and He/H2/CH4 gas compositions. The resulting films were characterised using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50…
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This paper presents findings from a study of nanocrystalline diamond (NCD) growth in a microwave plasma chemical vapour deposition (CVD) reactor. NCD films were grown using Ar/H2/CH4 and He/H2/CH4 gas compositions. The resulting films were characterised using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Analysis revealed an estimated grain size of the order of 50 nm, growth rates in the range 0.01 to 0.3 um/h and sp3 and sp2 bonded carbon content consistent with that expected for NCD. The C2 Swan band was probed using cavity ring-down spectroscopy (CRDS) to measure the absolute C2 (a) number density in the plasma during diamond film growth. The number density in the Ar/H2/CH4 plasmas was in the range 2 to 4 x 10^12 cm-3, but found to be present in quantities too low to measure in the He/H2/CH4 plasmas. Optical emission spectrometry (OES) was employed to determine the relative densities of the C2 excited state (d) in the plasma. The fact that similar NCD material was grown whether using Ar or He as the carrier gas suggests that C2 does not play a major role in the growth of nanocrystalline diamond.
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Submitted 9 August, 2004;
originally announced August 2004.
