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Electrically controlled interlayer trion fluid in electron-hole bilayers
Authors:
Ruishi Qi,
Qize Li,
Zuocheng Zhang,
Sudi Chen,
**gxu Xie,
Yunbo Ou,
Zhiyuan Cui,
David D. Dai,
Andrew Y. Joe,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Alex Zettl,
Liang Fu,
Feng Wang
Abstract:
The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the…
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The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the strong coupling regime of electron-hole bilayers, electrons and holes in separate layers can spontaneously form three-particle trion bound states that resemble positronium ions in high energy physics. The interlayer trions can assume 1e-2h and 2e-1h configurations, where electrons and holes are confined in different transition metal dichalcogenide layers. We show that the two correlated holes in 1e-2h trions form a spin-singlet state with a spin gap of ~1meV. By electrostatic gating, the equilibrium state of our system can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, a trion-charge mixture or an electron-hole plasma. Upon optical excitation, the system can host novel high-order multiparticle charge complexes including interlayer four-particle complex (tetrons) and five-particle complex (pentons). Our work demonstrates a unique platform to study novel correlated phases of tunable Bose-Fermi mixtures and opens up new opportunities to realize artificial ions/molecules in electronic devices.
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Submitted 5 December, 2023;
originally announced December 2023.
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Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
Authors:
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Luis A. Jauregui,
Kateryna Pistunova,
Dapeng Ding,
You Zhou,
Giovanni Scuri,
Kristiaan De Greve,
Andrey Sushko,
Bumho Kim,
Takashi Taniguchi,
Kenji Watanabe,
James C. Hone,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrost…
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Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.
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Submitted 11 June, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$
Authors:
Andrew Y. Joe,
Kateryna Pistunova,
Kristen Kaasbjerg,
Ke Wang,
Bumho Kim,
Daniel A. Rhodes,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Tony Low,
Luis A. Jauregui,
Philip Kim
Abstract:
Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can b…
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Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.
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Submitted 10 October, 2023; v1 submitted 6 October, 2023;
originally announced October 2023.
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Perfect Coulomb drag and exciton transport in an excitonic insulator
Authors:
Ruishi Qi,
Andrew Y. Joe,
Zuocheng Zhang,
**gxu Xie,
Qixin Feng,
Zheyu Lu,
Ziyu Wang,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Feng Wang
Abstract:
Strongly coupled two-dimensional electron-hole bilayers can give rise to novel quantum Bosonic states: electrons and holes in electrically isolated layers can pair into interlayer excitons, which can form a Bose-Einstein condensate below a critical temperature at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer must be accompanied by an equ…
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Strongly coupled two-dimensional electron-hole bilayers can give rise to novel quantum Bosonic states: electrons and holes in electrically isolated layers can pair into interlayer excitons, which can form a Bose-Einstein condensate below a critical temperature at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer must be accompanied by an equal but opposite current in the other, and counterflow superconductivity, where the excitons form a superfluid with zero viscosity. Electron-hole bilayers in the strong coupling limit with an excitonic insulator ground state have been recently achieved in semiconducting transition metal dichalcogenide heterostructures, but direct electrical transport measurements remain challenging. Here we use a novel optical spectroscopy to probe the electrical transport of correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe perfect Coulomb drag in the excitonic insulator phase up to a temperature as high as ~15K. Strongly correlated electron and hole transport is also observed at unbalanced electron and hole densities, although the Coulomb drag is not perfect anymore. Meanwhile, the counterflow resistance of interlayer excitons remains finite. These results indicate the formation of an exciton gas in the excitonic insulator which does not condensate into a superfluid at low temperature. Our work also demonstrates that dynamic optical spectroscopy provides a powerful tool for probing novel exciton transport behavior and possible exciton superfluidity in correlated quantum electron-hole fluids.
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Submitted 26 September, 2023;
originally announced September 2023.
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Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures
Authors:
Ruishi Qi,
Andrew Y. Joe,
Zuocheng Zhang,
Yongxin Zeng,
Tiancheng Zheng,
Qixin Feng,
Emma Regan,
**gxu Xie,
Zheyu Lu,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Michael F. Crommie,
Allan H. MacDonald,
Feng Wang
Abstract:
Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron a…
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Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron and hole densities are unequal. Here, we use optical spectroscopy to quantitatively probe the local thermodynamic properties of strongly correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe a discontinuity in the electron and hole chemical potentials at matched electron and hole densities, a definitive signature of an excitonic insulator ground state. The excitonic insulator is stable up to a Mott density of ~$0.8\times {10}^{12} \mathrm{cm}^{-2}$ and has a thermal ionization temperature of ~70 K. The density dependence of the electron, hole, and exciton chemical potentials reveals strong correlation effects across the phase diagram. Compared with a non-interacting uniform charge distribution, the correlation effects lead to significant attractive exciton-exciton and exciton-charge interactions in the electron-hole fluid. Our work highlights the unique quantum behavior that can emerge in strongly correlated electron-hole systems.
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Submitted 22 June, 2023;
originally announced June 2023.
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Charge transfer dynamics in MoSe$_{2}$/hBN/WSe$_{2}$ heterostructures
Authors:
Yoseob Yoon,
Zuocheng Zhang,
Ruishi Qi,
Andrew Y. Joe,
Renee Sailus,
Kenji Watanabe,
Takashi Taniguchi,
Sefaattin Tongay,
Feng Wang
Abstract:
Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to control interlayer exciton properties and achieve novel exciton phenomena, such as exciton insulators and condensates, where longer lifetimes are desired. In this wor…
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Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to control interlayer exciton properties and achieve novel exciton phenomena, such as exciton insulators and condensates, where longer lifetimes are desired. In this work, we experimentally study the charge transfer dynamics in a heterostructure composed of a 1 nm thick hBN spacer between MoSe$_{2}$ and WSe$_{2}$ monolayers. We observe the hole transfer from MoSe$_{2}$ to WSe$_{2}$ through the hBN barrier with a time constant of 500 ps, which is over 3 orders of magnitude slower than that between TMD layers without a spacer. Furthermore, we observe strong competition between the interlayer charge transfer and intralayer exciton-exciton annihilation processes at high excitation densities. Our work opens possibilities to understand charge transfer pathways in TMD/hBN/TMD heterostructures for the efficient generation and control of interlayer excitons.
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Submitted 21 December, 2022; v1 submitted 28 September, 2022;
originally announced September 2022.
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Beam steering at the nanosecond time scale with an atomically thin reflector
Authors:
Trond I. Andersen,
Ryan J. Gelly,
Giovanni Scuri,
Bo L. Dwyer,
Dominik S. Wild,
Rivka Bekenstein,
Andrey Sushko,
Jiho Sung,
You Zhou,
Alexander A. Zibrov,
Xiaoling Liu,
Andrew Y. Joe,
Kenji Watanabe,
Takashi Taniguchi,
Susanne F. Yelin,
Philip Kim,
Hongkun Park,
Mikhail D. Lukin
Abstract:
Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thi…
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Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe2 monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10$^\circ$, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit.
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Submitted 14 July, 2023; v1 submitted 8 November, 2021;
originally announced November 2021.
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Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes
Authors:
Andrew Y. Joe,
Luis A. Jauregui,
Kateryna Pistunova,
Andrés M. Mier Valdivia,
Zhengguang Lu,
Dominik S. Wild,
Giovanni Scuri,
Kristiaan De Greve,
Ryan J. Gelly,
You Zhou,
Jiho Sung,
Andrey Sushko,
Takashi Taniguchi,
Kenji Watanabe,
Dmitry Smirnov,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to…
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Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentum to interlayer excitons$^{5,6}$, enabling emission from otherwise dark spin triplet excitons. Here, we report electrically tunable spin singlet and triplet exciton emission from atomically aligned TMD heterostructures. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g-factors. The interlayer tunneling current across the TMD vdW heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin PN junction. We demonstrate electrically tunability between the singlet and triplet excitons that are generated by charge injection. Atomically thin TMD heterostructure light emitting diodes thus enables a route for optoelectronic devices that can configure spin and valley quantum states independently by controlling the atomic stacking registry.
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Submitted 7 December, 2020;
originally announced December 2020.
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Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers
Authors:
Jiho Sung,
You Zhou,
Giovanni Scuri,
Viktor Zólyomi,
Trond I. Andersen,
Hyobin Yoo,
Dominik S. Wild,
Andrew Y. Joe,
Ryan J. Gelly,
Hoseok Heo,
Damien Bérubé,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail D. Lukin,
Philip Kim,
Vladimir I. Fal'ko,
Hongkun Park
Abstract:
Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and supercondu…
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Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trap**, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.
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Submitted 4 January, 2020;
originally announced January 2020.
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Electrically tunable valley dynamics in twisted WSe$_2$/WSe$_2$ bilayers
Authors:
Giovanni Scuri,
Trond I. Andersen,
You Zhou,
Dominik S. Wild,
Jiho Sung,
Ryan J. Gelly,
Damien Bérubé,
Hoseok Heo,
Linbo Shao,
Andrew Y. Joe,
Andrés M. Mier Valdivia,
Takashi Taniguchi,
Kenji Watanabe,
Marko Lončar,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in…
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The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe$_2$/WSe$_2$ bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than three orders of magnitude via electrostatic do**, enabling switching of the DOCP from ~80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.
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Submitted 24 December, 2019;
originally announced December 2019.
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Electrically controlled emission from triplet charged excitons in atomically thin heterostructures
Authors:
Andrew Y. Joe,
Luis A. Jauregui,
Kateryna Pistunova,
Zhengguang Lu,
Dominik S. Wild,
Giovanni Scuri,
Kristiaan De Greve,
Ryan J. Gelly,
You Zhou,
Jiho Sung,
Andrés Mier Valdivia,
Andrey Sushko,
Takashi Taniguchi,
Kenji Watanabe,
Dmitry Smirnov,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to excitons with selective valley and spin. Here, we demonstrate electrically controlle…
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Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Large spin-orbit coupling in transition metal dichalcogenides (TMDs) couples circularly polarized light to excitons with selective valley and spin. Here, we demonstrate electrically controlled brightening of spin-triplet interlayer excitons in a MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructure. The atomic registry of vdW layers in TMD heterostructures provides a quasi-angular momentum to interlayer excitons, enabling emission from otherwise dark spin-triplet excitons. Employing magnetic field, we show that photons emitted by triplet and singlet excitons in the same valley have opposite chirality. We also measure effective exciton g-factors, presenting direct and quantitative evidence of triplet interlayer excitons. We further demonstrate gate tuning of the relative photoluminescence intensity between singlet and triplet charged excitons. Electrically controlled emission between singlet and triplet excitons enables a route for optoelectronic devices that can configure excitonic chiral, spin, and valley quantum states.
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Submitted 16 December, 2019;
originally announced December 2019.
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Controlling excitons in an atomically thin membrane with a mirror
Authors:
You Zhou,
Giovanni Scuri,
Jiho Sung,
Ryan J. Gelly,
Dominik S. Wild,
Kristiaan De Greve,
Andrew Y. Joe,
Takashi Taniguchi,
Kenji Watanabe,
Philip Kim,
Mikhail D. Lukin,
Hongkun Park
Abstract:
We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures incorporating a MoSe2 monolayer host spatially homogeneous, lifetime-broadened excitons. Then, we interface this nearly ideal excitonic system with a metallic…
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We demonstrate a new approach for dynamically manipulating the optical response of an atomically thin semiconductor, a monolayer of MoSe2, by suspending it over a metallic mirror. First, we show that suspended van der Waals heterostructures incorporating a MoSe2 monolayer host spatially homogeneous, lifetime-broadened excitons. Then, we interface this nearly ideal excitonic system with a metallic mirror and demonstrate control over the exciton-photon coupling. Specifically, by electromechanically changing the distance between the heterostructure and the mirror, thereby changing the local photonic density of states in a controllable and reversible fashion, we show that both the absorption and emission properties of the excitons can be dynamically modulated. This electromechanical control over exciton dynamics in a mechanically flexible, atomically thin semiconductor opens up new avenues in cavity quantum optomechanics, nonlinear quantum optics, and topological photonics.
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Submitted 1 December, 2019; v1 submitted 24 January, 2019;
originally announced January 2019.
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Electrical control of interlayer exciton dynamics in atomically thin heterostructures
Authors:
Luis A. Jauregui,
Andrew Y. Joe,
Kateryna Pistunova,
Dominik S. Wild,
Alexander A. High,
You Zhou,
Giovanni Scuri,
Kristiaan De Greve,
Andrey Sushko,
Che-Hang Yu,
Takashi Taniguchi,
Kenji Watanabe,
Daniel J. Needleman,
Mikhail D. Lukin,
Hongkun Park,
Philip Kim
Abstract:
Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a lon…
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Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. Employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate the transport of neutral interlayer excitons across the whole sample that can be controlled by excitation power and gate electrodes. We also realize the drift motion of charged interlayer excitons using Ohmic-contacted devices. The electrical generation and control of excitons provides a new route for realizing quantum manipulation of bosonic composite particles with complete electrical tunability.
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Submitted 20 December, 2018;
originally announced December 2018.
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Impact of electrode density of states on transport through pyridine-linked single molecule junctions
Authors:
Olgun Adak,
Richard Korytár,
Andrew Y. Joe,
Ferdinand Evers,
Latha Venkataraman
Abstract:
We study the impact of electrode band structure on transport through single-molecule junctions by measuring the conductance of pyridine-based molecules using Ag and Au electrodes. Our experiments are carried out using the scanning tunneling microscope based break-junction technique and are supported by density functional theory based calculations. We find from both experiments and calculations tha…
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We study the impact of electrode band structure on transport through single-molecule junctions by measuring the conductance of pyridine-based molecules using Ag and Au electrodes. Our experiments are carried out using the scanning tunneling microscope based break-junction technique and are supported by density functional theory based calculations. We find from both experiments and calculations that the coupling of the dominant transport orbital to the metal is stronger for Au-based junctions when compared with Ag-based junctions. We attribute this difference to relativistic effects, which results in an enhanced density of d-states at the Fermi energy for Au compared with Ag. We further show that the alignment of the conducting orbital relative to the Fermi level does not follow the work function difference between two metals and is different for conjugated and saturated systems. We thus demonstrate that the details of the molecular level alignment and electronic coupling in metal-organic interfaces do not follow simple rules, but are rather the consequence of subtle local interactions.
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Submitted 1 April, 2015;
originally announced April 2015.
