Showing 1–18 of 18 results for author: Jo, K

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Authors: Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo, Pariasadat Musavigharavi, Bumho Kim, Jeffrey Zheng, Nicholas Trainor, Chen Chen, Joan M. Redwing, Eric A Stach, Roy H Olsson III, Deep Jariwala

Abstract: Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-eff… ▽ More Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: Manuscript (22 pages and 5 figures), supporting information

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Authors: Gwangwoo Kim, Benjamin Huet, Christopher E. Stevens, Kiyoung Jo, Jeng-Yuan Tsai, Saiphaneendra Bachu, Meghan Leger, Kyung Yeol Ma, Nicholas R. Glavin, Hyeon Suk Shin, Nasim Alem, Qimin Yan, Joshua R. Hedrickson, Joan M. Redwing, Deep Jariwala

Abstract: Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engine… ▽ More Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: Main Manuscript: 29 pages, 4 figures Supplementary Information: 14 pages, 12 figures

Tunable Localized Charge Transfer Excitons in a Mixed Dimensional van der Waals Heterostructure

Authors: Mahfujur Rahaman, Emanuele Marino, Alan G. Joly, Seunguk Song, Zhiqiao Jiang, Brian T. OCallahan, Daniel J. Rosen, Kiyoung Jo, Gwangwoo Kim, Patrick Z. El-Khoury, Christopher B. Murray, Deep Jariwala

Abstract: Observation of interlayer, charge-transfer (CT) excitons in van der Waals heterostructures (vdWHs) based on 2D-2D systems has been well investigated. While conceptually interesting, these charge transfer excitons are highly delocalized and spatially localizing them requires twisting layers at very specific angles. This issue of localizing the CT excitons can be overcome via making mixed dimensiona… ▽ More Observation of interlayer, charge-transfer (CT) excitons in van der Waals heterostructures (vdWHs) based on 2D-2D systems has been well investigated. While conceptually interesting, these charge transfer excitons are highly delocalized and spatially localizing them requires twisting layers at very specific angles. This issue of localizing the CT excitons can be overcome via making mixed dimensional vdWHs (MDHs) where one of the components is a spatially quantum confined medium. Here, we demonstrate the formation of CT excitons in a 2D/quasi-2D system comprising MoSe2 and WSe2 monolayers and CdSe/CdS based core/shell nanoplates (NPLs). Spectral signatures of CT excitons in our MDHs were resolved locally at the 2D/single-NPL heterointerface using tip-enhanced photoluminescence (TEPL) at room temperature. By varying both the 2D material, the shell thickness of the NPLs, and applying out-of-plane electric field, the exciton resonance energy was tuned by up to 120 meV. Our finding is a significant step towards the realization of highly tunable MDH-based next generation photonic devices. △ Less

Submitted 22 October, 2022; originally announced October 2022.

Comments: 4 figures, 20 pages

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Authors: Hyeon wook Lim, Young sam Kim, Kyu-** Jo, Seok-Choi, Chang Woo Lee, Dasol Kim, Ki hyeon Kwon, Hoe don Kwon, Soo bin Hwang, Byung-Joon Choi, Cheol-Woong Yang, Eun Ji Sim, Mann-Ho Cho

Abstract: Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by do** Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined… ▽ More Interfacial Phase Change Memory (iPCM) retrench unnecessary power consumption due to wasted heat generated during phase change by reducing unnecessary entropic loss. In this study, an advanced iPCM (GeTe/Ti-Sb2Te3 Superlattice) is synthesized by do** Ti into Sb2Te3. Structural analysis and density functional theory (DFT) calculations confirm that bonding distortion and structurally well-confined layers contribute to improve phase change properties in iPCM. Ti-Sb2Te3 acts as an effective thermal barrier to localize the generated heat inside active region, which leads to reduction of switching energy. Since Ge-Te bonds adjacent to short and strong Ti-Te bonds are more elongated than the bonds near Sb-Te, it is easier for Ge atoms to break the bond with Te due to strengthened Peierls distortions (Rlong/Rshort) during phase change process. Properties of advanced iPCM (cycling endurance, write speed/energy) exceed previous records. Moreover, well-confined multi-level states are obtained with advanced iPCM, showing potential as a neuromorphic memory. Our work paves the way for designing superlattice based PCM by controlling confinement layers. △ Less

Submitted 3 October, 2022; v1 submitted 30 September, 2022; originally announced September 2022.

Comments: 5 Figures and 2 table, 5 Supplementary figures, 27 pages There are problems with typos and quality degradation of figures during PDF conversion process, so we resubmit the updated one in which those issues are resolved. Under mutual agreement between our group(Prof.m.h.cho) and Prof. Robert E.Simpson group, each research content is submitted separately to arXiv.org on the same day. (2022. 9/30)

Direct Nano-Imaging of Light-Matter Interactions in Nanoscale Excitonic Emitters

Authors: Kiyoung Jo, Emanuele Marino, Jason Lynch, Zhiqiao Jiang, Natalie Gogotsi, Thomas P. Darlington, Mohammad Soroush, P. James Schuck, Nicholas J. Borys, Christopher Murray, Deep Jariwala

Abstract: Strong light-matter interactions in localized nano-emitters when placed near metallic mirrors have been widely reported via spectroscopic studies in the optical far-field. Here, we report a near-field nano-spectroscopic study of the localized nanoscale emitters on a flat Au substrate. We observe strong-coupling of the excitonic dipoles in quasi 2-dimensional CdSe/CdxZnS1-xS nanoplatelets with gap… ▽ More Strong light-matter interactions in localized nano-emitters when placed near metallic mirrors have been widely reported via spectroscopic studies in the optical far-field. Here, we report a near-field nano-spectroscopic study of the localized nanoscale emitters on a flat Au substrate. We observe strong-coupling of the excitonic dipoles in quasi 2-dimensional CdSe/CdxZnS1-xS nanoplatelets with gap mode plasmons formed between the Au tip and substrate. We also observe directional propagation on the Au substrate of surface plasmon polaritons launched from the excitons of the nanoplatelets as wave-like fringe patterns in the near-field photoluminescence maps. These fringe patterns were confirmed via extensive electromagnetic wave simulations to be standing-waves formed between the tip and the emitter on the substrate plane. We further report that both light confinement and the in-plane emission can be engineered by tuning the surrounding dielectric environment of the nanoplatelets. Our results lead to renewed understanding of in-plane, near-field electromagnetic signal transduction from the localized nano-emitters with profound implications in nano and quantum photonics as well as resonant optoelectronics. △ Less

Submitted 20 August, 2022; originally announced August 2022.

Comments: manuscript + supporting information

High Density, Localized Quantum Emitters in Strained 2D Semiconductors

Authors: Gwangwoo Kim, Hyong Min Kim, Pawan Kumar, Mahfujur Rahaman, Christopher E. Stevens, Jonghyuk Jeon, Kiyoung Jo, Kwan-Ho Kim, Nicholas Trainor, Haoyue Zhu, Byeong-Hyeok Sohn, Eric A. Stach, Joshua R. Hendrickson, Nicholas R Glavin, Joonki Suh, Joan M. Redwing, Deep Jariwala

Abstract: Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained… ▽ More Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources. △ Less

Submitted 1 April, 2022; originally announced April 2022.

Comments: 45 pages, 20 figures (5 main figures, 15 supporting figures)

Journal ref: ACS Nano, 2022

Self-Hybridized Polaritonic Emission from Layered Perovskites

Authors: Surendra B. Anantharaman, Christopher E. Stevens, Jason Lynch, Baokun Song, ** Hou, Huiqin Zhang, Kiyoung Jo, Pawan Kumar, Jean-Christophe Blancon, Aditya D. Mohite, Joshua R. Hendrickson, Deep Jariwala

Abstract: Light-matter coupling in excitonic materials has been the subject of intense investigation due to emergence of new excitonic materials. Two-dimensional layered hybrid organic/inorganic perovskites (2D HOIPs) support strongly bound excitons at room-temperatures with some of the highest oscillator strengths and electric loss tangents among the known excitonic materials. Here, we report strong light-… ▽ More Light-matter coupling in excitonic materials has been the subject of intense investigation due to emergence of new excitonic materials. Two-dimensional layered hybrid organic/inorganic perovskites (2D HOIPs) support strongly bound excitons at room-temperatures with some of the highest oscillator strengths and electric loss tangents among the known excitonic materials. Here, we report strong light-matter coupling in Ruddlesden-Popper phase 2D-HOIPs crystals without the necessity of an external cavity. We report concurrent occurrence of multiple-orders of hybrid light-matter states via both reflectance and luminescence spectroscopy in thick (> 100 nm) crystals and near-unity absorption in thin (< 20 nm) crystals. We observe resonances with quality factors > 250 in hybridized exciton-polaritons and identify a linear correlation between exciton-polariton mode splitting and extinction coefficient of the various 2D-HOIPs. Our work opens the door to studying polariton dynamics in self-hybridized and open cavity systems with broad applications in optoelectronics and photochemistry. △ Less

Submitted 13 May, 2021; originally announced May 2021.

Journal ref: Nano Letters 2021

Spatiotemporal Imaging of Thickness-Induced Band Bending Junctions

Authors: Joeson Wong, Artur R. Davoyan, Bolin Liao, Andrey Krayev, Kiyoung Jo, Eli Rotenberg, Aaron Bostwick, Chris Jozwiak, Deep Jariwala, Ahmed Zewail, Harry A. Atwater

Abstract: Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconduct… ▽ More Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconductor regions atop a buried heterojunction interface. Using MoS2 on Au to form a buried heterojunction interface, we find that lateral surface potential differences can arise in MoS2 from the local extent of vertical band bending in thin and thick MoS2 regions. Using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of photogenerated charge carriers and find that lateral carrier separation is enabled by a band bending junction, which is confirmed with semiconductor transport simulations. Band bending junctions may therefore enable new electronic and optoelectronic devices in Van der Waals materials that rely on thickness variations rather than do** to separate charge carriers. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Comments: 16 pages, 4 figures

Exciton-Photonics: From Fundamental Science to Applications

Authors: Surendra B. Anantharaman, Kiyoung Jo, Deep Jariwala

Abstract: Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed as excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned a new area of research that focuses on engineering, im… ▽ More Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed as excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned a new area of research that focuses on engineering, imaging, and modulating coupling between excitons and photons, resulting in the formation of hybrid-quasiparticles termed exciton-polaritons. This new area has the potential to bring about a paradigm shift in quantum optics, as well as classical optoelectronic devices. Here, we present a review on the coupling of light in excitonic semiconductors and investigation of the unique properties of these hybrid quasiparticles via both far-field and near-field imaging and spectroscopy techniques. Special emphasis is laid on recent advances with critical evaluation of the bottlenecks that plague various materials towards practical device implementations including quantum light sources. Our review highlights a growing need for excitonic materials development together with optical engineering and imaging techniques to harness the utility of excitons and their host materials for a variety of applications. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: review article. 9 figures

Journal ref: ACS Nano 2021

Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces

Authors: Kiyoung Jo, Pawan Kumar, Joseph Orr, Surendra B. Anantharaman, **shui Miao, Michael Motala, Arkamita Bandyopadhyay, Kim Kisslinger, Christopher Muratore, Vivek B. Shenoy, Eric Stach, Nicholas Glavin, Deep Jariwala

Abstract: The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal… ▽ More The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate do** of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors. △ Less

Submitted 28 January, 2021; originally announced January 2021.

Comments: 6 figures + supplement

Journal ref: ACS Nano 2021

Efficacy of Boron Nitride Encapsulation against Plasma-Processing in van der Waals Heterostructures

Authors: Pawan Kumar, Kelotchi S. Figueroa, Alexandre C. Foucher, Kiyoung Jo, Natalia Acero, Eric A. Stach, Deep Jariwala

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly enhanced when encapsulated in an environment that is free of charge disorder. Because hexagonal boron nitride (h-BN) is atomically thin, highly-crystalline, and is a strong insulator, it is one of the most commonly used 2D materials to encapsulate and passivate TMDCs. In this report, we examine how ultrathin h-BN shields an underlying MoS2 TMDC layer from the energetic argon plasmas that are routinely used during semiconductor device fabrication and post-processing. Aberration-corrected Scanning Transmission Electron Microscopy is used to analyze defect formation in both the h-BN and MoS2 layers, and these observations are correlated with Raman and photoluminescence spectroscopy. Our results highlight that h-BN is an effective barrier for short plasma exposures (< 30 secs) but is ineffective for longer exposures, which result in extensive knock-on damage and amorphization in the underlying MoS2. △ Less

Submitted 14 November, 2020; originally announced November 2020.

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Authors: **shui Miao, Xiwen Liu, Kiyoung Jo, Kang He, Ravindra Saxena, Baokun Song, Huiqin Zhang, Jiale He, Myung-Geun Han, Weida Hu, Deep Jariwala

Abstract: Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional do** schemes… ▽ More Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional do** schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of 'all-2D' vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures. △ Less

Submitted 22 March, 2020; originally announced March 2020.

Comments: Manuscript plus supporting information, 4 Figures

Journal ref: Nano Letters 2020

Hybrid Exciton-Plasmon-Polaritons in van der Waals Semiconductor Gratings

Authors: Huiqin Zhang, Bhaskar Abhiraman, Qing Zhang, **shui Miao, Kiyoung Jo, Stefano Roccasecca, Mark W. Knight, Artur R. Davoyan, Deep Jariwala

Abstract: Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilayer transition metal dichalcogenides by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-ph… ▽ More Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilayer transition metal dichalcogenides by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-photonics. Hence, we show that by patterning the TMDCs into nanoresonators, strong dispersion and avoided crossing of excitons and hybrid polaritons with interaction potentials exceeding 410 meV may be controlled with great precision. We further observe that inherently strong TMDC exciton absorption resonances may be completely suppressed due to excitation of hybrid photon states and their interference. Our work paves the way to a next generation of integrated exciton optoelectronic nano-devices and applications in light generation, computing, and sensing. △ Less

Submitted 31 December, 2019; originally announced December 2019.

Comments: 5 figures in manuscript

Momentum sharing in imbalanced Fermi systems

Authors: O. Hen, M. Sargsian, L. B. Weinstein, E. Piasetzky, H. Hakobyan, D. W. Higinbotham, M. Braverman, W. K. Brooks, S. Gilad, K. P. Adhikari, J. Arrington, G. Asryan, H. Avakian, J. Ball, N. A. Baltzell, M. Battaglieri, A. Beck, S. May-Tal Beck, I. Bedlinskiy, W. Bertozzi, A. Biselli, V. D. Burkert, T. Cao, D. S. Carman, A. Celentano , et al. (116 additional authors not shown)

Abstract: The atomic nucleus is composed of two different kinds of fermions, protons and neutrons. If the protons and neutrons did not interact, the Pauli exclusion principle would force the majority fermions (usually neutrons) to have a higher average momentum. Our high-energy electron scattering measurements using 12C, 27Al, 56Fe and 208Pb targets show that, even in heavy neutron-rich nuclei, short-range… ▽ More The atomic nucleus is composed of two different kinds of fermions, protons and neutrons. If the protons and neutrons did not interact, the Pauli exclusion principle would force the majority fermions (usually neutrons) to have a higher average momentum. Our high-energy electron scattering measurements using 12C, 27Al, 56Fe and 208Pb targets show that, even in heavy neutron-rich nuclei, short-range interactions between the fermions form correlated high-momentum neutron-proton pairs. Thus, in neutron-rich nuclei, protons have a greater probability than neutrons to have momentum greater than the Fermi momentum. This finding has implications ranging from nuclear few body systems to neutron stars and may also be observable experimentally in two-spin state, ultra-cold atomic gas systems. △ Less

Submitted 29 November, 2014; originally announced December 2014.

Comments: Published in Science. 10 pages, 3 figures

Journal ref: Science 346, 614 (2014)

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Authors: Sahng-Kyoon Jerng, Kisu Joo, Youngwook Kim, Sang-Moon Yoon, Jae Hong Lee, Miyoung Kim, Jun Sung Kim, Euijoon Yoon, Seung-Hyun Chun, Yong Seung Kim

Abstract: Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epita… ▽ More Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films. △ Less

Submitted 17 August, 2013; originally announced August 2013.

Comments: 17 pages, 4 figrues

Journal ref: Nanoscale, 5, 10618 (2013)

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

Authors: Yong Seung Kim, Jae Hong Lee, Young Duck Kim, Sahng-Kyoon Jerng, Kisu Joo, Eunho Kim, Jongwan Jung, Euijoon Yoon, Yun Daniel Park, Sunae Seo, Seung-Hyun Chun

Abstract: A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleatio… ▽ More A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD. △ Less

Submitted 26 June, 2013; v1 submitted 5 March, 2012; originally announced March 2012.

Comments: 22 pages, 6 figures

Journal ref: Nanoscale, 5, 1221 (2013)

Hydrodynamics of RN AdS$_4$ black hole and Holographic Optics

Authors: Xian-Hui Ge, Kwanghyun Jo, Sang-** Sin

Abstract: We consider the AdS$_4$ RN black hole and work out the momentum dependent hydrodynamic analysis for the vector modes. We also perform the spectral function calculation of the dual field theory. As an application, we consider the permittivity and permeability and find that for low frequency regime, the index of refraction is found to be negative, supporting the claim made in ref.\cite{amariti} for… ▽ More We consider the AdS$_4$ RN black hole and work out the momentum dependent hydrodynamic analysis for the vector modes. We also perform the spectral function calculation of the dual field theory. As an application, we consider the permittivity and permeability and find that for low frequency regime, the index of refraction is found to be negative, supporting the claim made in ref.\cite{amariti} for AdS$_5$. We also find that at static limit the medium has the zero permeability, a character of the superconductivity . △ Less

Submitted 23 December, 2010; v1 submitted 12 December, 2010; originally announced December 2010.

Comments: 18+1 pages, 6 figures

Journal ref: JHEP 1103:104,2011

Naive Mean Field Approximation for the Error Correcting Code

Authors: Masami Takata, Hayaru Shouno, Kazuki Joe, Masato Okada

Abstract: Solving the error correcting code is an important goal with regard to communication theory.To reveal the error correcting code characteristics, several researchers have applied a statistical-mechanical approach to this problem. In our research, we have treated the error correcting code as a Bayes inference framework. Carrying out the inference in practice, we have applied the NMF (naive mean fie… ▽ More Solving the error correcting code is an important goal with regard to communication theory.To reveal the error correcting code characteristics, several researchers have applied a statistical-mechanical approach to this problem. In our research, we have treated the error correcting code as a Bayes inference framework. Carrying out the inference in practice, we have applied the NMF (naive mean field) approximation to the MPM (maximizer of the posterior marginals) inference, which is a kind of Bayes inference. In the field of artificial neural networks, this approximation is used to reduce computational cost through the substitution of stochastic binary units with the deterministic continuous value units. However, few reports have quantitatively described the performance of this approximation. Therefore, we have analyzed the approximation performance from a theoretical viewpoint, and have compared our results with the computer simulation. △ Less

Submitted 22 May, 2003; originally announced May 2003.

Comments: 9 pages, 6figures