Showing 1–15 of 15 results for author: Jiao, M

Multi-interface engineering to realize all-solution processed highly efficient Kesterite solar cells

Authors: Licheng Lou, Kang Yin, **lin Wang, Yuan Li, Xiao Xu, Bowen Zhang, Menghan Jiao, Shudan Chen, Tan Guo, Jiangjian Shi, Huijue Wu, Yanhong Luo, Dongmei Li, Qingbo Meng

Abstract: With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/A… ▽ More With the rapid development of Kesterite Cu2ZnSn(S, Se)4 solar cells in the past few years, how to achieve higher cost-performance ratio has become an important topic in the future development and industrialization of this technology. Herein, we demonstrate an all-solution route for the cell fabrication, in particular targeting at the solution processed window layer comprised of ZnO nanoparticles/Ag nanowires. A multi-interface engineering strategy assisted by organic polymers and molecules is explored to synergistically improve the film deposition, passivate the surface defects and facilitate the charge transfer. These efforts help us achieve high-performance and robust Kesterite solar cells at extremely low time and energy costs, with efficiency records of 14.37% and 13.12% being realized in rigid and flexible Kesterite solar cells, respectively. Our strategy here is also promising to be transplanted into other solar cells with similar geometric and energy band structures, hel** reduce production costs and shorten the production cycle (i.e. increasing production capacity) of these photovoltaic industries. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Vacancy enhanced cation ordering enables >15% efficiency in Kesterite solar cells

Authors: **lin Wang, Licheng Lou, Kang Yin, Fanqi Meng, Xiao Xu, Menghan Jiao, Bowen Zhang, Jiangjian Shi, Huijue Wu, Yanhong Luo, Dongmei Li, Qingbo Meng

Abstract: Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and sev… ▽ More Atomic disorder, a widespread problem in compound crystalline materials, is a imperative affecting the performance of multi-chalcogenide Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic device known for its low cost and environmental friendliness. Cu-Zn disorder is particularly abundantly present in CZTSSe due to its extraordinarily low formation energy, having induced high-concentration deep defects and severe charge loss, while its regulation remains challenging due to the contradiction between disorder-order phase transition thermodynamics and atom-interchange kinetics. Herein, through introducing more vacancies in the CZTSSe surface, we explored a vacancy-assisted strategy to reduce the atom-interchange barrier limit to facilitate the Cu-Zn ordering kinetic process. The improvement in the Cu-Zn order degree has significantly reduced the charge loss in the device and helped us realize 15.4% (certified at 14.9%) and 13.5% efficiency (certified at 13.3%) in 0.27 cm2 and 1.1 cm2-area CZTSSe solar cells, respectively, thus bringing substantial advancement for emerging inorganic thin-film photovoltaics. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV

Authors: Kang Yin, **lin Wang, Licheng Lou, Xiao Xu, Bowen Zhang, Menghan Jiao, Jiangjian Shi, Dongmei Li, Huijue Wu, Yanhong Luo, Qingbo Meng

Abstract: Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in contr… ▽ More Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in controlling the gradient distribution of alloying elements at high temperatures. Herein, targeting at the Cd alloyed CZTS, we propose a pre-crystallization strategy to reduce the intense vertical mass transport and Cd rapid diffusion in the film growth process, thereby realizing front Cd-gradient CZTS absorber. The Cd-gradient CZTS absorber, exhibiting downward bending conduction band structure, has significantly enhanced the minority carrier transport and additionally improved band alignment and interface property of CZTS/CdS heterojunction. Ultimately, we have achieved a champion total-area efficiency of 13.5% (active-area efficiency: 14.1%) in the cell and in particular a high open-circuit voltage of >800 mV. We have also achieved a certified total-area cell efficiency of 13.16%, realizing a substantial step forward for the pure sulfide Kesterite solar cell. △ Less

Submitted 30 March, 2024; originally announced April 2024.

Coherent Dynamics of Charge Carriers in γ-InSe Revealed by Ultrafast Spectroscopy

Authors: Jianwei Shen, Jiayu Liang, Qixu Zhao, Menghui Jia, **quan Chen, Haitao Sun, Qinghong Yuan, Hong-Guang Duan, Ajay Jha, Yan Yang, Zhenrong Sun

Abstract: For highly efficient ultrathin solar cells, layered indium selenide (InSe), a van der Waals solid, has shown a great promise. In this paper, we study the coherent dynamics of charge carriers generation in γ-InSe single crystals. We employ ultrafast transient absorption spectroscopy to examine the dynamics of hot electrons after resonant photoexcitation. To study the effect of excess kinetic energy… ▽ More For highly efficient ultrathin solar cells, layered indium selenide (InSe), a van der Waals solid, has shown a great promise. In this paper, we study the coherent dynamics of charge carriers generation in γ-InSe single crystals. We employ ultrafast transient absorption spectroscopy to examine the dynamics of hot electrons after resonant photoexcitation. To study the effect of excess kinetic energy of electrons after creating A exciton (VB1 to CB transition), we excite the sample with broadband pulses centered at 600, 650, 700 and 750 nm, respectively. We analyze the relaxation and recombination dynamics in γ-InSe by global fitting approach. Five decay associated spectra with their associated lifetimes are obtained, which have been assigned to intraband vibrational relaxation and interband recombination processes. We extract characteristic carrier thermalization times from 1 to 10 ps. To examine the coherent vibrations accompanying intraband relaxation dynamics, we analyze the kinetics by fitting to exponential functions and the obtained residuals are further processed for vibrational analysis. A few key phonon coherences are resolved and ab-initio quantum calculations reveal the nature of the associated phonons. The wavelet analysis is employed to study the time evolution of the observed coherences, which show that the low-frequency coherences last for more than 5 ps. Associated calculations reveal that the contribution of the intralayer phonon modes is the key determining factor for the scattering between free electrons and lattice. Our results provide fundamental insights into the photophysics in InSe and help to unravel their potential for high-performance optoelectronic devices. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Multinary Alloying Suppresses Defect Formation in Emerging Inorganic Solar Cells

Authors: Jiangjian Shi, **lin Wang, Fanqi Meng, Jiazheng Zhou, Xiao Xu, Kang Yin, Licheng Lou, Menghan Jiao, Bowen Zhang, Huijue Wu, Yanhong Luo, Dongmei Li, Qingbo Meng

Abstract: The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex… ▽ More The Cu2ZnSn(S, Se)4 (CZTSSe) emerging inorganic solar cell is highly promising for accelerating the large-scale and low-cost applications of thin-film photovoltaics. It possesses distinct advantages such as abundant and non-toxic constituent elements, high material stability, and excellent compatibility with industrial processes. However, CZTSSe solar cells still face challenges related to complex defects and charge losses. To overcome these limitations and improve the efficiency of CZTSSe solar cells, it is crucial to experimentally identify and mitigate deep defects. In this study, we reveal that the dominant deep defect in CZTSSe materials exhibits donor characteristics. We propose that incomplete cation exchange during the multi-step crystallization reactions of CZTSSe is the kinetics mechanism responsible for the defect formation. To address this issue, we introduce an elemental synergistic alloying approach aimed at weakening the metal-chalcogen bond strength and the stability of intermediate phases. This alloying strategy has facilitated the kinetics of cation exchange, leading to a significant reduction in charge losses within the CZTSSe absorber. As a result, we have achieved a cell efficiency of over 14.5%. These results represent a significant advancement for emerging inorganic solar cells and additionally bring more opportunities for the precise identification and regulation of defects in a wider range of multinary inorganic compounds. △ Less

Submitted 26 June, 2023; originally announced June 2023.

Journal ref: Nature Energy 2024

Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells

Authors: Xiao Xu, Jiazheng Zhou, Kang Yin, **lin Wang, Licheng Lou, Menghan Jiao, Bowen Zhang, Dongmei Li, Jiangjian Shi, Huijue Wu, Yanhong Luo, Qingbo Meng

Abstract: Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-seleniz… ▽ More Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materials for its earth-abundant reserves, environmental friendliness, and high stability.The quality of CZTSSe absorber determines the power-conversion efficiency (PCE) of CZTSSe solar cells. The absorber's quality lies on post-selenization process, which is the reaction of Cu-Zn-Sn precursor and selenium vapor. And the post-selenization is dependent on various factors (e.g. temperature, precursor composition, reaction atmosphere, etc).However, synergistic regulation of these factors cannot be realized under a widely-used single-temperature zone selenization condition.Here, in our dual-temperature zone selenization scheme, a solid-liquid and solid-gas (solid precursor and liquid/gas phase Se) synergistic reaction strategy has been developed to precisely regulate the selenization. Pre-deposited excess liquid Se provides high Se chemical potential to drive a direct and fast formation of the CZTSSe phase, significantly reducing the amount of binary and ternary compounds within phase evolution. And organics removal can be accomplished via a synergistic optimization of Se condensation and subsequent volatilization. We achieve a high-performance CZTSSe solar cell with a remarkable PCE of 13.6%, and the highest large-area PCE of 12.0% (over 1cm2). Our strategy will provide a new idea for further improving efficiency of CZTSSe solar cells via phase evolution regulation, and also for other complicated multi-compound synthesis. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Journal ref: Nature Communications 2023, 14, 6650

Strain-driven valley states and phase transitions in Janus VSiGeN4 monolayer

Authors: Pengyu Liu, Siyuan Liu, Minglei Jia, Huabing Yin, Guangbiao Zhang, Fengzhu Ren, Bing Wang, Chang Liu

Abstract: The interplay between topology and valley degree of freedom has attracted much interest because it can realize new phenomena and applications. Here, based on first-principles calculations, we demonstrate intrinsically valley-polarized quantum anomalous Hall effect in monolayer ferrovalley material: Janus VSiGeN4, of which the edge states are chiral-spin-valley locking. Besides, a small tensile or… ▽ More The interplay between topology and valley degree of freedom has attracted much interest because it can realize new phenomena and applications. Here, based on first-principles calculations, we demonstrate intrinsically valley-polarized quantum anomalous Hall effect in monolayer ferrovalley material: Janus VSiGeN4, of which the edge states are chiral-spin-valley locking. Besides, a small tensile or compressive strain can drive phase transition in the material from valley-polarized quantum anomalous Hall state to half-valley-metal state. With the increase of the strain, the material turns into ferrovalley semiconductor with valley anomalous Hall effect. The origin of phase transition is sequent band inversion of V d orbital at K valley. Moreover, we find that phase transition causes the sign reversal of Berry curvature and induces different polarized light absorption in different valley states. Our work provides an ideal material platform for practical applications and experimental exploration of the interplay between topology, spintronics, and valleytronics. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Comments: 8 pages, 6 figures

Electric Double Layer at the Metal-Oxide/Electrolyte Interface

Authors: Lisanne Knijff, Mei Jia, Chao Zhang

Abstract: Metal-oxide surfaces act as both Brønsted acids and bases, which allows the exchange of protons with the electrolyte solution and generates either positive or negative proton charges depending on the environmental pH. These interfacial proton charges are then compensated by counter-ions from the electrolyte solution, which leads to the formation of the electric double layer (EDL). Because the EDL… ▽ More Metal-oxide surfaces act as both Brønsted acids and bases, which allows the exchange of protons with the electrolyte solution and generates either positive or negative proton charges depending on the environmental pH. These interfacial proton charges are then compensated by counter-ions from the electrolyte solution, which leads to the formation of the electric double layer (EDL). Because the EDL plays a crucial role in electrochemistry, geochemistry and colloid science, understanding the structure-property relationship of the EDL in metal-oxide systems from both experimental and theoretical approaches is necessary. This chapter focuses on the physical chemistry of the protonic double layer at the metal-oxide/electrolyte interface. In particular, determinations of the EDL capacitance and the double-layer potential from potentiometric titration experiments, electrochemical methods, surface-sensitive vibrational spectroscopy and X-ray photoelectron spectroscopy are summarized. This is followed by discussions from the atomistic modelling aspect of the EDL, with an emphasis on the density-functional theory-based molecular dynamics simulations. A conclusion and outlook for future works on this topic are also given. △ Less

Submitted 10 March, 2022; originally announced March 2022.

Journal ref: Encyclopedia of Solid-Liquid Interfaces (2024) 2: 567

Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films

Authors: F. L. Zeng, Z. Y. Ren, Y. Li, J. Y. Zeng, M. W. Jia, J. Miao, A. Hoffmann, W. Zhang, Y. Z. Wu, Z. Yuan

Abstract: Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away f… ▽ More Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes. △ Less

Submitted 3 August, 2020; originally announced August 2020.

Comments: 6 pages, 4 figures, Supplemental Materials available

Journal ref: Phys. Rev. Lett. 125, 097201 (2020)

Magnetic order induced polarization anomaly of Raman scattering in 2D magnet CrI$_3$

Authors: Yujun Zhang, Xiaohua Wu, BingBing Lv, Minghui Wu, Shixuan Zhao, Junyang Chen, Mengyuan Jia, Chusheng Zhang, Le Wang, Xinwei Wang, Yuanzhen Chen, Jiawei Mei, Takashi Taniguchi, Kenji Watanabe, Hugen Yan, Qihang Liu, Li Huang, Yue Zhao, Mingyuan Huang

Abstract: The recent discovery of 2D magnets has revealed various intriguing phenomena due to the coupling between spin and other degree of freedoms (such as helical photoluminescence, nonreciprocal SHG). Previous research on the spin-phonon coupling effect mainly focuses on the renormalization of phonon frequency. Here we demonstrate that the Raman polarization selection rules of optical phonons can be gre… ▽ More The recent discovery of 2D magnets has revealed various intriguing phenomena due to the coupling between spin and other degree of freedoms (such as helical photoluminescence, nonreciprocal SHG). Previous research on the spin-phonon coupling effect mainly focuses on the renormalization of phonon frequency. Here we demonstrate that the Raman polarization selection rules of optical phonons can be greatly modified by the magnetic ordering in 2D magnet CrI$_3$. For monolayer samples, the dominant A$\rm_{1g}$ peak shows abnormally high intensity in the cross polarization channel at low temperature, which is forbidden by the selection rule based on the lattice symmetry. While for bilayer, this peak is absent in the cross polarization channel for the layered antiferromagnetic (AFM) state and reappears when it is tuned to the ferromagnetic (FM) state by an external magnetic field. Our findings shed light on exploring the emergent magneto-optical effects in 2D magnets. △ Less

Submitted 29 October, 2019; v1 submitted 10 October, 2019; originally announced October 2019.

Comments: 15 pages, 4 figures

Imaging Antiferromagnetic Domains in Nickel-oxide Thin Films by Magneto-optical Voigt Effect

Authors: Jia Xu, Chao Zhou, Mengwen Jia, Dong Shi, Changqing Liu, Haoran Chen, Gong Chen, Guanhua Zhang, Yu Liang, Junqin Li, Wei Zhang, Yizheng Wu

Abstract: Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the spin-transport behavior and the microscopic AFM domain states due to the lack of the real-time AFM domain imaging technique under the electric field. Here we report… ▽ More Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the spin-transport behavior and the microscopic AFM domain states due to the lack of the real-time AFM domain imaging technique under the electric field. Here we report a significant Voigt rotation up to 60 mdeg in thin NiO(001) films at room temperature. Such large Voigt rotation allows us to directly observe AFM domains in thin-film NiO by utilizing a wide-field optical microscope. Further complementary XMLD-PEEM measurement confirms that the Voigt contrast originates from the NiO AFM order. We examine the domain pattern evolution at a wide range of temperature and with the application of external magnetic field. Comparing to large-scale-facility techniques such as the X-ray photoemission electron microscopy, the use with a wide-field, tabletop optical imaging method enables straightforward access to domain configurations of single-layer AFMs. △ Less

Submitted 7 September, 2019; v1 submitted 17 June, 2019; originally announced June 2019.

Comments: 17 pages , 5 figures

Constraints on a Spin-Dependent Exotic Interaction between Electrons with Single Electron Spin Quantum Sensors

Authors: Xing Rong, Man Jiao, Jianpei Geng, Bo Zhang, Tianyu Xie, Fazhan Shi, Chang-Kui Duan, Yi-Fu Cai, Jiangfeng Du

Abstract: A new laboratory bound on the axial-vector mediated interaction between electron spins at micrometer scale is established with single nitrogen-vacancy (NV) centers in diamond. A single crystal of $p$-terphenyl doped pentacene-$d_{14}$ under laser pum** provides the source of polarized electron spins. Based on the measurement of polarization signal via nitrogen-vacancy centers, we set a constrain… ▽ More A new laboratory bound on the axial-vector mediated interaction between electron spins at micrometer scale is established with single nitrogen-vacancy (NV) centers in diamond. A single crystal of $p$-terphenyl doped pentacene-$d_{14}$ under laser pum** provides the source of polarized electron spins. Based on the measurement of polarization signal via nitrogen-vacancy centers, we set a constraint for the exotic electron-electron coupling $g_A^eg_A^e$, within the force range from 10 to 900 $μ$m. The obtained upper bound of the coupling at 500 $μ$m is $|g_A^eg_A^e / 4π\hbar c |\leq 1.8\times 10^{-19} $, which is one order of magnitude more stringent than a previous experiment. Our result shows that the NV center can be a promising platform for searching for new particles predicted by theories beyond the standard model. △ Less

Submitted 15 August, 2018; v1 submitted 19 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. Lett. 121, 080402 (2018)

Broadband terahertz generation via the interface inverse Rashba-Edelstein effect

Authors: C. Zhou, Y. P. Liu, Z. Wang, S. J. Ma, M. W. Jia, R. Q. Wu, L. Zhou, W. Zhang, M. K. Liu, Y. Z. Wu, J. Qi

Abstract: Novel mechanisms for electromagnetic wave emission in the terahertz (THz) frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report a new mechanism for broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba i… ▽ More Novel mechanisms for electromagnetic wave emission in the terahertz (THz) frequency regime emerging at the nanometer scale have recently attracted intense attention for the purpose of searching next-generation broadband THz emitters. Here, we report a new mechanism for broadband THz emission, utilizing the interface inverse Rashba-Edelstein effect. By engineering the symmetry of the Ag/Bi Rashba interface, we demonstrate a controllable THz radiation (~0.1-5 THz) waveform emitted from metallic Fe/Ag/Bi heterostructures following photo-excitation. We further reveal that this type of THz radiation can be selectively superimposed on the emission discovered recently due to the inverse Spin Hall effect, yielding a unique film thickness dependent emission pattern. Our results thus offer new opportunities for versatile broadband THz radiation using the interface quantum effects. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. Lett. 121, 086801 (2018)

Anisotropic Spin Relaxation Induced by Surface Spin-Orbit Effects

Authors: Chao Zhou, Fatih Kandaz, Yunjiao Cai, Chuan Qin, Mengwen Jia, Zhe Yuan, Yizheng Wu, Yi Ji

Abstract: It is a common perception that the transport of a spin current in polycrystalline metal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key variable. We demonstrate surprising anisotropic spin relaxation in mesoscopic polycrystalline Cu channels in nonlocal spin valves. For directions in the substrate… ▽ More It is a common perception that the transport of a spin current in polycrystalline metal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key variable. We demonstrate surprising anisotropic spin relaxation in mesoscopic polycrystalline Cu channels in nonlocal spin valves. For directions in the substrate plane, the spin-relaxation length is longer for spins parallel to the Cu channel than for spins perpendicular to it, by as much as 9% at 10 K. Spin-orbit effects on the surfaces of Cu channels can account for this anisotropic spin relaxation. The finding suggests novel tunability of spin current, not only by its polarization direction but also by electrostatic gating. △ Less

Submitted 21 September, 2017; originally announced September 2017.

Comments: (#) C. Zhou and F. Kandaz contributed equally to this work. Main text (22 pages, 4 figures) + Supplementary material (9 pages, 3 figures)

Journal ref: Phys. Rev. B 96, 094413 (2017)

Spin Hall effects in mesoscopic Pt films with high resistivity

Authors: Chuan Qin, Yongming Luo, Chao Zhou, Yunjiao Cai, Mengwen Jia, Shuhan Chen, Yizheng Wu, Yi Ji

Abstract: The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 μΩ*cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using t… ▽ More The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 μΩ*cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in-situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: λ_pt<0.8 nm. The average product of λ_pt and the Pt spin Hall angle α_H is substantial: α_H*λ_pt=(0.142 +/- 0.040)nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films. △ Less

Submitted 17 August, 2016; v1 submitted 21 March, 2016; originally announced March 2016.