Showing 1–23 of 23 results for author: Ji, P

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

Authors: Yunhe Bai, Yuanzhao Li, Ruixuan Liu, Jianli Luan, Yang Chen, Wenyu Song, Peng-Fei Ji, Cui Ding, Zongwei Gao, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Tianchen Zhu, Lin Gu, Lili Wang, **song Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Yang Feng, Xiao Feng

Abstract: The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. I… ▽ More The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for develo** devices based on electrically tunable topological quantum states. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films

Authors: Yang Shi, Yunhe Bai, Yuanzhao Li, Yang Feng, Qiang Li, Huanyu Zhang, Yang Chen, Yitian Tong, Jianli Luan, Ruixuan Liu, Pengfei Ji, Zongwei Gao, Hangwen Guo, **song Zhang, Yayu Wang, Xiao Feng, Ke He, Xiaodong Zhou, Jian Shen

Abstract: We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field swee** indicates that the magnetic domains or the spatial… ▽ More We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field swee** indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system. △ Less

Submitted 23 January, 2024; originally announced January 2024.

Comments: 14 pages, 4 figures

Map** electrostatic potential in electrolyte solution

Authors: Bo Huang, Yining Yang, Ruinong Han, Keke Chen, Zhiyuan Wang, Longteng Yun, Yian Wang, Haowei Chen, Yingchao Du, Yuxia Hao, Peng Lv, Haoran Ma, Pengju Ji, Yuemei Tan, Lianmin Zheng, Lihong Liu, Renkai Li, Jie Yang

Abstract: Map** the electrostatic potential (ESP) distribution around ions in electrolyte solution is crucial for the establishment of a microscopic understanding of electrolyte solution properties. For solutions in the bulk phase, it has not been possible to measure the ESP distribution on Angstrom scale. Here we show that liquid electron scattering experiment using state-of-the-art relativistic electron… ▽ More Map** the electrostatic potential (ESP) distribution around ions in electrolyte solution is crucial for the establishment of a microscopic understanding of electrolyte solution properties. For solutions in the bulk phase, it has not been possible to measure the ESP distribution on Angstrom scale. Here we show that liquid electron scattering experiment using state-of-the-art relativistic electron beam can be used to measure the Debye screening length of aqueous LiCl, KCl, and KI solutions across a wide range of concentrations. We observe that the Debye screening length is long-ranged at low concentration and short-ranged at high concentration, providing key insight into the decades-long debate over whether the impact of ions in water is long-ranged or short-ranged. In addition, we show that the measured ESP can be used to retrieve the non-local dielectric function of electrolyte solution, which can serve as a promising route to investigate the electrostatic origin of special ion effects. Our observations show that, interaction, as one of the two fundamental perspectives for understanding electrolyte solution, can provide much richer information than structure. △ Less

Submitted 1 February, 2024; v1 submitted 1 November, 2023; originally announced November 2023.

Comments: The small-angle signal in Fig. 2 C-H is highly likely to be an experimental artifact, due to that the electron beam is placed too close to the edge of the liquid sheet. This artifact invalidates the main conclusion of the paper

Probing the Dark Exciton in Monolayer MoS$_2$ by Quantum Interference in Second Harmonic Generation Spectroscopy

Authors: Chenjiang Qian, Viviana Villafañe, Pedro Soubelet, Peirui Ji, Andreas V. Stier, Jonathan J. Finley

Abstract: We report resonant second harmonic generation (SHG) spectroscopy of an hBN-encapsulated monolayer of MoS$_2$. By tuning the energy of the excitation laser, we identify a dark state transition (D) that is blue detuned by +25 meV from the neutral exciton X$^0$. We observe a splitting of the SHG spectrum into two distinct peaks and a clear anticrossing between them as the SHG resonance is tuned throu… ▽ More We report resonant second harmonic generation (SHG) spectroscopy of an hBN-encapsulated monolayer of MoS$_2$. By tuning the energy of the excitation laser, we identify a dark state transition (D) that is blue detuned by +25 meV from the neutral exciton X$^0$. We observe a splitting of the SHG spectrum into two distinct peaks and a clear anticrossing between them as the SHG resonance is tuned through the energy of the dark exciton D. This observation is indicative of quantum interference arising from the strong two-photon light-matter interaction. We further probe the incoherent relaxation from the dark state to the bright excitons, including X$^0$ and localized excitons LX, by the resonant enhancement of their intensities at the SHG-D resonance. The relaxation of D to bright excitons is strongly suppressed on the bare substrate whilst enabled when the hBN/MoS$_2$/hBN heterostructure is integrated in a nanobeam cavity. The relaxation enabled by the cavity is explained by the phonon scattering enhanced by the cavity phononic effects. Our work reveals the two-photon quantum interference with long-lived dark states and enables the control through nanostructuring of the substrate. These results indicate the great potential of dark excitons in 2D-material based nonlinear quantum devices. △ Less

Submitted 5 September, 2023; originally announced September 2023.

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Authors: Jian Zhao, Peixun Ji, Yaqi Li, Rui Li, Kaiming Zhang, Hao Tian, Kaichen Yu, Boyue Bian, Luzhen Hao, Xue Xiao, Will Griffin, Noel Dudeck, Ramiro Moro, Lei Ma, Walt A. de Heer

Abstract: Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene la… ▽ More Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics. △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: Text and figures + supplemental information

Thickness Insensitive Nanocavities for 2D Heterostructures using Photonic Molecules

Authors: Peirui Ji, Chenjiang Qian, Jonathan J. Finley, Shuming Yang

Abstract: Two-dimensional (2D) heterostructures integrated into nanophotonic cavities have emerged as a promising approach towards novel photonic and opto-electronic devices. However, the thickness of the 2D heterostructure has a strong influence on the resonance frequency of the nanocavity. For a single cavity, the resonance frequency shifts approximately linearly with the thickness. Here, we propose to us… ▽ More Two-dimensional (2D) heterostructures integrated into nanophotonic cavities have emerged as a promising approach towards novel photonic and opto-electronic devices. However, the thickness of the 2D heterostructure has a strong influence on the resonance frequency of the nanocavity. For a single cavity, the resonance frequency shifts approximately linearly with the thickness. Here, we propose to use the inherent non-linearity of the mode coupling to render the cavity mode insensitive to the thickness of the 2D heterostructure. Based on the coupled mode theory, we reveal that this goal can be achieved using either a homoatomic molecule with a filtered coupling or heteroatomic molecules. We perform numerical simulations to further demonstrate the robustness of the eigenfrequency in the proposed photonic molecules. Our results render nanophotonic structures insensitive to the thickness of 2D materials, thus owing appealing potential in energy- or detuning-sensitive applications such as cavity quantum electrodynamics. △ Less

Submitted 27 August, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Journal ref: Nanophotonics 12(17), 3501-3510 (2023)

Extending the coherence time of spin defects in hBN enables advanced qubit control and quantum sensing

Authors: Roberto Rizzato, Martin Schalk, Stephan Mohr, Joachim P. Leibold, Jens C. Hermann, Fleming Bruckmaier, Peirui Ji, Georgy V. Astakhov, Ulrich Kentsch, Manfred Helm, Andreas V. Stier, Jonathan J. Finley, Dominik B. Bucher

Abstract: Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently l… ▽ More Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers (${V_B}^-$) in hBN have shown promise as sensors of temperature, pressure, and static magnetic fields. However, the short spin coherence time of this defect currently limits its scope for quantum technology. Here, we apply dynamical decoupling techniques to suppress magnetic noise and extend the spin coherence time by nearly two orders of magnitude, approaching the fundamental $T_1$ relaxation limit. Based on this improvement, we demonstrate advanced spin control and a set of quantum sensing protocols to detect electromagnetic signals in the MHz range with sub-Hz resolution. This work lays the foundation for nanoscale sensing using spin defects in an exfoliable material and opens a promising path to quantum sensors and quantum networks integrated into ultra-thin structures. △ Less

Submitted 24 December, 2022; originally announced December 2022.

Intrinsic and tunable quantum anomalous Hall effect and magnetic topological phases in XYBi2Te5

Authors: Xin-Yi Tang, Zhe Li, Feng Xue, Pengfei Ji, Zetao Zhang, Xiao Feng, Yong Xu, Quansheng Wu, Ke He

Abstract: By first-principles calculations, we study the magnetic and topological properties of XYBi2Te5-family (X, Y = Mn, Ni, V, Eu) compounds. The strongly coupled double magnetic atom-layers can significantly enhance the magnetic ordering temperature while kee** the topologically nontrivial properties. Particularly, NiVBi2Te5 is found to be a magnetic Weyl semimetal in bulk and a Chern insulator in th… ▽ More By first-principles calculations, we study the magnetic and topological properties of XYBi2Te5-family (X, Y = Mn, Ni, V, Eu) compounds. The strongly coupled double magnetic atom-layers can significantly enhance the magnetic ordering temperature while kee** the topologically nontrivial properties. Particularly, NiVBi2Te5 is found to be a magnetic Weyl semimetal in bulk and a Chern insulator in thin film with both the Curie temperature (~150 K) and full gap well above 77 K. Ni2Bi2Te5, MnNiBi2Te5, NiVBi2Te5 and NiEuBi2Te5 exhibits intrinsic dynamic axion state. Among them, MnNiBi2Te5 has a Neel temperature over 200 K and Ni2Bi2Te5 even demonstrates antiferromagnetic order above room temperature. These results indicate an approach to realize high temperature quantum anomalous Hall effect and other topological quantum effects for practical applications. △ Less

Submitted 5 July, 2023; v1 submitted 15 November, 2022; originally announced November 2022.

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Authors: Yunhe Bai, Yuanzhao Li, Jianli Luan, Ruixuan Liu, Wenyu Song, Yang Chen, Peng-Fei Ji, Qinghua Zhang, Fanqi Meng, Bingbing Tong, Lin Li, Yuying Jiang, Zongwei Gao, Lin Gu, **song Zhang, Yayu Wang, Qi-Kun Xue, Ke He, Yang Feng, Xiao Feng

Abstract: The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the qua… ▽ More The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties. △ Less

Submitted 17 April, 2023; v1 submitted 8 June, 2022; originally announced June 2022.

Comments: 4 figures

Journal ref: National Science Review, nwad189 (2023)

Scenarios for a post-COVID-19 world airline network

Authors: Jiachen Ye, Peng Ji, Marc Barthelemy

Abstract: The airline industry was severely hit by the COVID-19 crisis with an average demand decrease of about $64\%$ (IATA, April 2020) which triggered already several bankruptcies of airline companies all over the world. While the robustness of the world airline network (WAN) was mostly studied as an homogeneous network, we introduce a new tool for analyzing the impact of a company failure: the `airline… ▽ More The airline industry was severely hit by the COVID-19 crisis with an average demand decrease of about $64\%$ (IATA, April 2020) which triggered already several bankruptcies of airline companies all over the world. While the robustness of the world airline network (WAN) was mostly studied as an homogeneous network, we introduce a new tool for analyzing the impact of a company failure: the `airline company network' where two airlines are connected if they share at least one route segment. Using this tool, we observe that the failure of companies well connected with others has the largest impact on the connectivity of the WAN. We then explore how the global demand reduction affects airlines differently, and provide an analysis of different scenarios if its stays low and does not come back to its pre-crisis level. Using traffic data from the Official Aviation Guide (OAG) and simple assumptions about customer's airline choice strategies, we find that the local effective demand can be much lower than the average one, especially for companies that are not monopolistic and share their segments with larger companies. Even if the average demand comes back to $60\%$ of the total capacity, we find that between $46\%$ and $59\%$ of the companies could experience a reduction of more than $50\%$ of their traffic, depending on the type of competitive advantage that drives customer's airline choice. These results highlight how the complex competitive structure of the WAN weakens its robustness when facing such a large crisis. △ Less

Submitted 4 July, 2020; originally announced July 2020.

Comments: 12 pages, 7 main figures (+5 figures in appendix)

An epitaxial graphene platform for zero-energy edge state nanoelectronics

Authors: Vladimir S. Prudkovskiy, Yiran Hu, Yue Hu, Kaimin Zhang, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander, Alessandro De Cecco, Clemens B. Winkelmann, Yuxuan Jiang, Tianhao Zhao, Katsunori Wakabayashi, Zhigang Jiang, Lei Ma, Claire Berger, Walt A. de Heer

Abstract: Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge… ▽ More Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater that the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics. △ Less

Submitted 25 October, 2022; v1 submitted 8 October, 2019; originally announced October 2019.

Comments: File contains article and supplementary. Nature Communications (in print)

Journal ref: Nature Communications (2022) 13, 7814

Multiple-photon excitation of nitrogen vacancy center in diamond

Authors: Peng Ji, Ryan B. Balili, Jonathan Beaumariage, Shouvik Mukherjee, David W. Snoke, Gurudev Dutt

Abstract: We report the first observation of multi-photon photoluminescence excitation (PLE) below the resonant energies of nitrogen vacancy (NV) centers in diamond. The quadratic and cubic dependence of the integrated fluorescence intensity as a function of excitation power indicate a two-photon excitation pathway for the NV- charge state and a three-photon process involved for the neutral NV0 charge state… ▽ More We report the first observation of multi-photon photoluminescence excitation (PLE) below the resonant energies of nitrogen vacancy (NV) centers in diamond. The quadratic and cubic dependence of the integrated fluorescence intensity as a function of excitation power indicate a two-photon excitation pathway for the NV- charge state and a three-photon process involved for the neutral NV0 charge state respectively. Comparing the total multi-photon energy with its single-photon equivalent, the PLE spectra follows the absorption spectrum of single photon excitation. We also observed that the efficiency of photoluminescence for different charge states, as well as the decay time constant, was dependent on the excitation wavelength and power. △ Less

Submitted 26 January, 2018; v1 submitted 20 October, 2017; originally announced October 2017.

Comments: 5 pages, 6 figures

Journal ref: Phys. Rev. B 97, 134112 (2018)

A Multiscale Study of Film Thickness Dependent Femtosecond Laser Spallation and Ablation

Authors: Pengfei Ji, Yuwen Zhang

Abstract: A multiscale studying integrating ab initio quantum mechanics, classical molecular dynamics and two-temperature model, is carried out to study film thickness dependent femtosecond laser spallation and ablation. As an interval of 130.73 nm, five silver films with increasing thickness from 392.19 nm to 915.11 nm are simulated. Absorbed laser fluences of 0.1 J/cm^2 and 0.3 J/cm^2 are chosen to observ… ▽ More A multiscale studying integrating ab initio quantum mechanics, classical molecular dynamics and two-temperature model, is carried out to study film thickness dependent femtosecond laser spallation and ablation. As an interval of 130.73 nm, five silver films with increasing thickness from 392.19 nm to 915.11 nm are simulated. Absorbed laser fluences of 0.1 J/cm^2 and 0.3 J/cm^2 are chosen to observe the laser spallation and ablation. The simulation results show that film thickness has a close correlation with the Kelvin degree of heating of the laser-irradiated silver films, which further affects femtosecond laser spallation and ablation. Suggestions for precise micromachining are proposed in this paper. △ Less

Submitted 26 May, 2020; v1 submitted 16 March, 2017; originally announced March 2017.

Multiscale modeling of femtosecond laser irradiation on copper film with electron thermal conductivity from ab initio calculation

Authors: Pengfei Ji, Yuwen Zhang

Abstract: By combining ab initio quantum mechanics calculation and Drude model, electron temperature and lattice temperature dependent electron thermal conductivity is calculated and implemented into a multiscale model of laser material interaction, which couples the classical molecular dynamics and two-temperature model. The results indicated that the electron thermal conductivity obtained from ab initio c… ▽ More By combining ab initio quantum mechanics calculation and Drude model, electron temperature and lattice temperature dependent electron thermal conductivity is calculated and implemented into a multiscale model of laser material interaction, which couples the classical molecular dynamics and two-temperature model. The results indicated that the electron thermal conductivity obtained from ab initio calculation leads to faster thermal diffusion than that using the electron thermal conductivity from empirical determination, which further induces deeper melting region, larger number of density waves travelling inside the copper film and more various speeds of atomic clusters ablated from the irradiated film surface. △ Less

Submitted 2 November, 2016; originally announced November 2016.

Molecular Dynamics Simulation of Condensation on Nanostructured Surface in a Confined Space

Authors: Li Li, Pengfei Ji, Yuwen Zhang

Abstract: Understanding heat transfer characteristics of phase change and enhancing thermal energy transport in nanoscale are of great interest in both theoretical and practical applications. In the present study, we investigated the nanoscale vaporization and condensation by using molecular dynamics simulation. A cuboid system is modeled by placing hot and cold walls in the bottom and top ends and filling… ▽ More Understanding heat transfer characteristics of phase change and enhancing thermal energy transport in nanoscale are of great interest in both theoretical and practical applications. In the present study, we investigated the nanoscale vaporization and condensation by using molecular dynamics simulation. A cuboid system is modeled by placing hot and cold walls in the bottom and top ends and filling with working fluid between the two walls. By setting two different high temperatures for the hot wall, we showed the normal and explosive vaporizations and their impacts on thermal transport. For the cold wall, the cuboid nanostructures with fixed height, varied length, width ranging from 4 to 20 layers, and an interval of 4 layers are constructed to study the effects of condensation induced by different nanostructures. For vaporization, the results showed that higher temperature of the hot wall led to faster transport of the working fluid as a cluster moving from the hot wall to the cold wall. However, excessive temperature of the hot wall causes explosive boiling, which seems not good for the transport of heat due to the less phase change of working fluid. For condensation, the results indicate that nanostructure facilitates condensation, which could be affected not only by the increased surface area but also by the distances between surfaces of the nanostructures and the cold end. There is an optimal nanosctructure scheme which maximizes the phase change rate of the entire system. △ Less

Submitted 30 March, 2016; originally announced March 2016.

Journal ref: Appl. Phys. A-Mater, 122, p. 496, 2016

Charge state dynamics of the nitrogen vacancy center in diamond under 1064 nm laser excitation

Authors: Peng Ji, M. V. Gurudev Dutt

Abstract: The photophysics and charge state dynamics of the nitrogen vacancy (NV) center in diamond has been extensively investigated but is still not fully understood. In contrast to previous work, we find that NV$^{0}$ converts to NV$^{-}$ under excitation with low power near-infrared (1064 nm) light, resulting in $increased$ photoluminescence from the NV$^{-}$ state. We used a combination of spectral and… ▽ More The photophysics and charge state dynamics of the nitrogen vacancy (NV) center in diamond has been extensively investigated but is still not fully understood. In contrast to previous work, we find that NV$^{0}$ converts to NV$^{-}$ under excitation with low power near-infrared (1064 nm) light, resulting in $increased$ photoluminescence from the NV$^{-}$ state. We used a combination of spectral and time-resolved photoluminescence experiments and rate-equation modeling to conclude that NV$^{0}$ converts to NV$^{-}$ via absorption of 1064 nm photons from the valence band of diamond. We report fast quenching and recovery of the photoluminescence from $both$ charge states of the NV center under low power 1064 nm laser excitation, which has not been previously observed. We also find, using optically detected magnetic resonance experiments, that the charge transfer process mediated by the 1064 nm laser is spin-dependent. △ Less

Submitted 6 April, 2016; v1 submitted 25 March, 2016; originally announced March 2016.

Journal ref: Phys. Rev. B 94, 024101 (2016)

Ab initio determination of effective electron-phonon coupling factor in copper

Authors: Pengfei Ji, Yuwen Zhang

Abstract: The electron temperature dependent electron density of states, Fermi-Dirac distribution, and electron-phonon spectral function are computed as prerequisites before achieving effective electron-phonon coupling factor. The obtained coupling factor is implemented into a molecular dynamics (MD) and two-temperature model (TTM) coupled simulation of femtosecond laser heating. By monitoring temperature e… ▽ More The electron temperature dependent electron density of states, Fermi-Dirac distribution, and electron-phonon spectral function are computed as prerequisites before achieving effective electron-phonon coupling factor. The obtained coupling factor is implemented into a molecular dynamics (MD) and two-temperature model (TTM) coupled simulation of femtosecond laser heating. By monitoring temperature evolutions of electron and lattice subsystems, the result utilizing coupling factor from ab initio calculation, shows a faster decrease of electron temperature and increase of lattice temperature than those using coupling factor from phenomenological treatment. The approach of calculating coupling factor and its implementation into MD-TTM simulation is applicable to other metals. △ Less

Submitted 7 March, 2016; v1 submitted 29 February, 2016; originally announced February 2016.

Continuum-atomistic simulation of picosecond laser heating of copper with electron heat capacity from ab initio calculation

Authors: Pengfei Ji, Yuwen Zhang

Abstract: On the basis of ab initio quantum mechanics (QM) calculation, the obtained electron heat capacity is implemented into energy equation of electron subsystem in two temperature model (TTM). Upon laser irradiation on the copper film, energy transfer from the electron subsystem to the lattice subsystem is modeled by including the electron-phonon coupling factor in molecular dynamics (MD) and TTM coupl… ▽ More On the basis of ab initio quantum mechanics (QM) calculation, the obtained electron heat capacity is implemented into energy equation of electron subsystem in two temperature model (TTM). Upon laser irradiation on the copper film, energy transfer from the electron subsystem to the lattice subsystem is modeled by including the electron-phonon coupling factor in molecular dynamics (MD) and TTM coupled simulation. The results show temperature and thermal melting difference between the QM-MD-TTM integrated simulation and pure MD-TTM coupled simulation. The successful construction of the QM-MD-TTM integrated simulation provide a general way that is accessible to other metals in laser heating. △ Less

Submitted 29 February, 2016; v1 submitted 2 February, 2016; originally announced February 2016.

Journal ref: Chem. Phys. Lett., 648, 109-113, 2016

Femtosecond Laser Processing of Germanium: An Ab Initio Molecular Dynamics Study

Authors: Pengfei Ji, Yuwen Zhang

Abstract: An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) co… ▽ More An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) containing 64 germanium atoms with an ordered arrangement of 1.132 nm in each dimension, the femtosecond laser processing is simulated by imposing the Nose Hoover thermostat to the electronic subsystem lasting for ~100 fs and continuing with microcanonical ensemble simulation of ~200 fs. The simulation results show solid, liquid and gas phases of germanium under adjusted intensities of the femtosecond laser irradiation. We find the irradiated germanium distinguishes from the usual germanium crystal by analyzing their melting and dynamic properties. △ Less

Submitted 31 January, 2016; originally announced February 2016.

Journal ref: J. Phys. D: Appl. Phys., 46(49), p. 495108, 2013

Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

Authors: Pengfei Ji, Yuwen Zhang, Mo Yang

Abstract: The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat… ▽ More The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective. △ Less

Submitted 31 January, 2016; originally announced February 2016.

Journal ref: J. Appl. Phys., 114, p. 234905, 2013

First-Principles Molecular Dynamics Investigation of the Atomic-Scale Energy Transport: From Heat Conduction to Thermal Radiation

Authors: Pengfei Ji, Yuwen Zhang

Abstract: First-principles molecular dynamics simulation based on a plane wave/pseudopotential implementation of density functional theory is adopted to investigate atomic scale energy transport for semiconductors (silicon and germanium). By imposing thermostats to keep constant temperatures of the nanoscale thin layers, initial thermal non-equilibrium between the neighboring layers is established under the… ▽ More First-principles molecular dynamics simulation based on a plane wave/pseudopotential implementation of density functional theory is adopted to investigate atomic scale energy transport for semiconductors (silicon and germanium). By imposing thermostats to keep constant temperatures of the nanoscale thin layers, initial thermal non-equilibrium between the neighboring layers is established under the vacuum condition. Models with variable gap distances with an interval of lattice constant increment of the simulated materials are set up and statistical comparisons of temperature evolution curves are made. Moreover, the equilibration time from non-equilibrium state to thermal equilibrium state of different silicon or/and germanium layers combinations are calculated. The results show significant distinctions of heat transfer under different materials and temperatures combinations. Further discussions on the equilibrium time are made to explain the simulation results. As the first work of the atomic scale energy transport spanning from heat conduction to thermal radiation, the simulation results here highlights the promising application of the first-principles molecular dynamics in thermal engineering. △ Less

Submitted 31 January, 2016; originally announced February 2016.

Journal ref: Int. J. Heat Mass Transfer, 60, pp. 69-80, 2013

Loading an Optical Trap with Diamond Nanocrystals Containing Nitrogen-Vacancy Centers from a Surface

Authors: Jen-Feng Hsu, Peng Ji, M. V. Gurudev Dutt, Brian R. D'Urso

Abstract: We present a simple and effective method of loading particles into an optical trap in air at atmospheric pressure. Material which is highly absorptive at the trap** laser wavelength, such as tartrazine dye, is used as media to attach photoluminescent diamond nanocrystals. The mix is burnt into a cloud of air-borne particles as the material is swept near the trap** laser focus on a glass slide.… ▽ More We present a simple and effective method of loading particles into an optical trap in air at atmospheric pressure. Material which is highly absorptive at the trap** laser wavelength, such as tartrazine dye, is used as media to attach photoluminescent diamond nanocrystals. The mix is burnt into a cloud of air-borne particles as the material is swept near the trap** laser focus on a glass slide. Particles are then trapped with the laser used for burning or transferred to a second laser trap at a different wavelength. Evidence of successfully loading diamond nanocrystals into the trap presented includes high sensitivity of the photoluminecscence (PL) to an excitation laser at 520~nm wavelength and the PL spectra of the optically trapped particles. This method provides a convenient technique for the study of the nitrogen-vacancy (NV) centers contained in optically trapped diamond nanocrystals. △ Less

Submitted 26 June, 2015; originally announced June 2015.

Comments: 6 pages and 8 figures

Spectra of random networks in the weak clustering regime

Authors: Thomas K. DM. Peron, Peng Ji, Jürgen Kurths, Francisco A. Rodrigues

Abstract: The asymptotic behaviour of dynamical processes in networks can be expressed as a function of spectral properties of the corresponding adjacency and Laplacian matrices. Although many theoretical results are known for the spectra of traditional configuration models, networks generated through these models fail to describe many topological features of real-world networks, in particular non-null valu… ▽ More The asymptotic behaviour of dynamical processes in networks can be expressed as a function of spectral properties of the corresponding adjacency and Laplacian matrices. Although many theoretical results are known for the spectra of traditional configuration models, networks generated through these models fail to describe many topological features of real-world networks, in particular non-null values of the clustering coefficient. Here we study effects of cycles of order three (triangles) in network spectra. By using recent advances in random matrix theory, we determine the spectral distribution of the network adjacency matrix as a function of the average number of triangles attached to each node for networks without modular structure and degree-degree correlations. Implications to network dynamics are discussed. Our findings can shed light in the study of how particular kinds of subgraphs influence network dynamics. △ Less

Submitted 27 May, 2018; v1 submitted 12 October, 2013; originally announced October 2013.

Journal ref: Europhys. Lett. 121, 68001 (2018)