Resolving mean-field solutions of dissipative phase transitions using permutational symmetry
Authors:
Minjae Jo,
Bukyoung Jhun,
B. Kahng
Abstract:
Phase transitions in dissipative quantum systems have been investigated using various analytical approaches, particularly in the mean-field (MF) limit. However, analytical results often depend on specific methodologies. For instance, Keldysh formalism shows that the dissipative transverse Ising (DTI) model exhibits a discontinuous transition at the upper critical dimension, $d_c= 3$, whereas the f…
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Phase transitions in dissipative quantum systems have been investigated using various analytical approaches, particularly in the mean-field (MF) limit. However, analytical results often depend on specific methodologies. For instance, Keldysh formalism shows that the dissipative transverse Ising (DTI) model exhibits a discontinuous transition at the upper critical dimension, $d_c= 3$, whereas the fluctuationless MF approach predicts a continuous transition in infinite dimensions ($d_\infty$). These two solutions cannot be reconciled because the MF solutions above $d_c$ should be identical. This necessitates a numerical verification. However, numerical studies on large systems may not be feasible because of the exponential increase in computational complexity as $\mathcal{O}(2^{2N})$ with system size $N$. Here, we note that because spins can be regarded as being fully connected at $d_\infty$, the spin indices can be permutation invariant, and the number of quantum states can be considerably contracted with the computational complexity $\mathcal{O}(N^3)$. The Lindblad equation is transformed into a dynamic equation based on the contracted states. Applying the Runge--Kutta algorithm to the dynamic equation, we obtain all the critical exponents, including the dynamic exponent $z\approx 0.5$. Moreover, since the DTI model has $\mathbb{Z}_2$ symmetry, the hyperscaling relation has the form $2β+γ=ν(d+z)$, we obtain the relation $d_c+z=4$ in the MF limit. Hence, $d_c\approx 3.5$; thus, the discontinuous transition at $d=3$ cannot be treated as an MF solution. We conclude that the permutation invariance at $d_\infty$ can be used effectively to check the validity of an analytic MF solution in quantum phase transitions.
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Submitted 27 March, 2022; v1 submitted 18 October, 2021;
originally announced October 2021.
Simplicial SIS model in scale-free uniform hypergraph
Authors:
Bukyoung Jhun,
Minjae Jo,
B. Kahng
Abstract:
The hypergraph offers a platform to study structural properties emerging from more complicated and higher-order than pairwise interactions among constituents and dynamical behavior such as the spread of information or disease. Recently, a simplicial contagion problem was introduced and considered using a simplicial susceptible-infected-susceptible (SIS) model. Although recent studies have investig…
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The hypergraph offers a platform to study structural properties emerging from more complicated and higher-order than pairwise interactions among constituents and dynamical behavior such as the spread of information or disease. Recently, a simplicial contagion problem was introduced and considered using a simplicial susceptible-infected-susceptible (SIS) model. Although recent studies have investigated random hypergraphs with a Poisson-type facet degree distribution, hypergraphs in the real world can have a power-law type of facet degree distribution. Here, we consider the SIS contagion problem on scale-free uniform hypergraphs and find that a continuous or hybrid epidemic transition occurs when the hub effect is dominant or weak, respectively. We determine the critical exponents analytically and numerically. We discuss the underlying mechanism of the hybrid epidemic transition.
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Submitted 1 October, 2019;
originally announced October 2019.
Electronic structure of charged bilayer and trilayer phosphorene
Authors:
Bukyoung Jhun,
Cheol-Hwan Park
Abstract:
We have investigated the electronic structure of charged bilayer and trilayer phoshporene using first-principles, density-functional-theory calculations. We find that the effective dielectric constant for an external electric field applied perpendicular to phosphorene layers increases with the charge density and is twice as large as in an undoped system if the electron density is around…
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We have investigated the electronic structure of charged bilayer and trilayer phoshporene using first-principles, density-functional-theory calculations. We find that the effective dielectric constant for an external electric field applied perpendicular to phosphorene layers increases with the charge density and is twice as large as in an undoped system if the electron density is around $5\times10^{13}$cm$^{-2}$. It is known that if few-layer phosphorene is placed under such an electric field, the electron band gap decreases and if the strength of the electric field is further increased, the band gap closes. We show that the electronic screening due to added charge carriers reduces the amount of this reduction in the band gap and increases the critical strength of the electric field for gap closure. If the electron density is around $4\times10^{13}$cm$^{-2}$, for example, this critical field for trilayer phosphorene is 40\% higher than that for a charge-neutral system. The results are directly relevant to experiments on few-layer phosphorene with top and bottom electrical gates and / or with chemical dopants.
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Submitted 7 August, 2017;
originally announced August 2017.
