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A Versatile Side Entry Laser System for Scanning Transmission Electron Microscopy
Authors:
Ondrej Dyck,
Olugbenga Olunloyo,
Kai Xiao,
Benjamin Wolf,
Thomas M. Moore,
Andrew R. Lupini,
Stephen Jesse
Abstract:
We present the design and implementation of a side entry laser system designed for an ultra-high vacuum scanning transmission electron microscope. This system uses a versatile probe design enclosed in a vacuum envelope such that parts can be easily aligned, modified, or exchanged without disturbing the vacuum. The system uses a mirror mounted on the sample holder such that the sample can be illumi…
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We present the design and implementation of a side entry laser system designed for an ultra-high vacuum scanning transmission electron microscope. This system uses a versatile probe design enclosed in a vacuum envelope such that parts can be easily aligned, modified, or exchanged without disturbing the vacuum. The system uses a mirror mounted on the sample holder such that the sample can be illuminated without being tilted. Notably the mirror can be removed and replaced with an ablation target and a higher power laser used to ablate material directly onto the sample. We argue that new capabilities hold the potential to transform the electron microscope from an analysis tool towards a more flexible synthesis system, where atomic scale fabrication and atom-by-atom experiments can be performed.
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Submitted 12 July, 2024;
originally announced July 2024.
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Your Clean Graphene is Still Not Clean
Authors:
Ondrej Dyck,
Aisha Okmi,
Kai Xiao,
Sidong Lei,
Andrew R. Lupini,
Stephen Jesse
Abstract:
Efforts aimed at scaling fabrication processes to the level of single atoms, dubbed atom-by-atom fabrication or atomic fabrication, invariably encounter the obstacle of atomic scale cleanliness. When considering atomic fabrication, cleanliness of the base material and purity of the source reservoir from which atomic structures will be built are invariable constraints imposed by laws of physics and…
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Efforts aimed at scaling fabrication processes to the level of single atoms, dubbed atom-by-atom fabrication or atomic fabrication, invariably encounter the obstacle of atomic scale cleanliness. When considering atomic fabrication, cleanliness of the base material and purity of the source reservoir from which atomic structures will be built are invariable constraints imposed by laws of physics and chemistry. As obvious as such statements may be, and regardless of the inevitable consequences for successful atomic fabrication, there is a poignant lack of understanding of the "dirt" (contamination/impurities). Here, we examine hydrocarbon contamination on graphene. Graphene has formed the base substrate for many e-beam-based atomic fabrication studies and many strategies for cleaning graphene have been presented in the literature. One popular method is heating to high temperatures (>500 °C). It is usually inferred that volatile hydrocarbons evaporate into the microscope vacuum system leaving behind pristine graphene. Here, we show through direct image intensity analysis that what appears to be clean graphene can be coated with a thin layer of dynamically diffusing hydrocarbons. This result holds significant implications for approaches to e-beam based atomic fabrication, updates the conceptual model of e-beam induced hydrocarbon deposition, and may extend to hot surfaces generally.
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Submitted 2 July, 2024;
originally announced July 2024.
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AEcroscoPy: A software-hardware framework empowering microscopy toward automated and autonomous experimentation
Authors:
Yongtao Liu,
Kevin Roccapriore,
Marti Checa,
Sai Mani Valleti,
Jan-Chi Yang,
Stephen Jesse,
Rama K. Vasudevan
Abstract:
Microscopy, in particular scanning probe and electron microscopy, has been pivotal in improving our understanding of structure-function relationships at the nanoscale and is by now ubiquitous in most research characterization labs and facilities. However, traditional microscopy operations are still limited largely by a human-centric click-and-go paradigm utilizing vendor-provided software, which n…
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Microscopy, in particular scanning probe and electron microscopy, has been pivotal in improving our understanding of structure-function relationships at the nanoscale and is by now ubiquitous in most research characterization labs and facilities. However, traditional microscopy operations are still limited largely by a human-centric click-and-go paradigm utilizing vendor-provided software, which necessarily limits the scope, utility, efficiency, effectiveness, and at times reproducibility of microscopy experiments. Here, we develop a coupled hardware-software platform that consists of a field-programmable gate array (FPGA) device, with LabView-built customized acquisition scripts, along with a software package termed AEcroscoPy (short for Automated Experiments in Microscopy driven by Python) that overcome these limitations and provide the necessary abstractions towards full automation of microscopy platforms. The platform works across multiple vendor devices on scanning probe microscopes and scanning transmission electron microscopes. It enables customized scan trajectories, processing functions that can be triggered locally or remotely on processing servers, user-defined excitation waveforms, standardization of data models, and completely seamless operation through simple Python commands to enable a plethora of microscopy experiments to be performed in a reproducible, automated manner. This platform can be readily coupled with existing machine learning libraries as well as simulations, to provide automated decision-making and active theory-experiment optimization loops to turn microscopes from characterization tools to instruments capable of autonomous model refinement and physics discovery.
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Submitted 15 December, 2023;
originally announced December 2023.
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Closed-Loop Electron-Beam-Induced Spectroscopy and Nanofabrication Around Individual Quantum Emitters
Authors:
Jawaher Almutlaq,
Kyle P. Kelley,
Hyeongrak Choi,
Linsen Li,
Benjamin Lawrie,
Ondrej Dyck,
Dirk Englund,
Stephen Jesse
Abstract:
Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometri…
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Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometries. While different out-coupling methods with near-unity efficiency exist, many have yet to be realized due to current limitations in nanofabrication methods, especially for mechanically hard materials like diamond. Here, we leverage electron-beam-induced etching to modify Sn-implanted diamond quantum microchiplets containing integrated waveguides with width and thickness of 280 nm and 200 nm, respectively. This approach allows for simultaneous high-resolution imaging and modification of the host matrix with an open geometry and direct writing. When coupled with the cathodoluminescence signal generated from the electron-emitter interactions, we can monitor the enhancement of the quantum emitters in real-time with nanoscale spatial resolution. The operando measurement and manipulation of single photon emitters demonstrated here provides a new foundation for the control of emitter-cavity interactions in integrated quantum photonics.
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Submitted 8 December, 2023;
originally announced December 2023.
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Direct Fabrication of Atomically Defined Pores in MXenes
Authors:
Matthew G. Boebinger,
Dundar E. Yilmaz,
Ayana Ghosh,
Sudhajit Misra,
Tyler S. Mathis,
Sergei V. Kalinin,
Stephen Jesse,
Yury Gogotsi,
Adri C. T. van Duin,
Raymond R. Unocic
Abstract:
Controlled fabrication of nanopores in atomically thin two-dimensional material offers the means to create robust membranes needed for ion transport, nanofiltration, and DNA sensing. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation using electrons or ions; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advanta…
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Controlled fabrication of nanopores in atomically thin two-dimensional material offers the means to create robust membranes needed for ion transport, nanofiltration, and DNA sensing. Techniques for creating nanopores have relied upon either plasma etching or direct irradiation using electrons or ions; however, aberration-corrected scanning transmission electron microscopy (STEM) offers the advantage of combining a highly energetic, sub-angstrom sized electron beam for atomic manipulation along with atomic resolution imaging. Here, we utilize a method for automated nanopore fabrication with real-time atomic visualization to enhance our mechanistic understanding of beam-induced transformations. Additionally, an electron beam simulation technique, Electron-Beam Simulator (E-BeamSim) was developed to observe the atomic movements and interactions resulting from electron beam irradiation. Using the 2D MXene Ti3C2Tx, we explore the influence of temperature on nanopore fabrication by tracking atomic transformation pathways and find that at room temperature, electron beam irradiation induces random displacement of atoms and results in a pileup of titanium atoms at the nanopore edge. This pileup was confirmed and demonstrated in E-BeamSim simulations around the small, milled area in the MXene monolayer. At elevated temperatures, the surface functional groups on MXene are effectively removed, and the mobility of atoms increases, which results in atomic transformations that lead to the selective removal of atoms layer by layer. Through controllable manufacture using e-beam milling fabrication, the production and then characterization of the fabricated defects can be better understood for future work. This work can lead to the development of defect engineering techniques within functionalized MXene layers.
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Submitted 29 November, 2023;
originally announced November 2023.
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When the atoms dance: exploring mechanisms of electron-beam induced modifications of materials with machine-learning assisted high temporal resolution electron microscopy
Authors:
Matthew G. Boebinger,
Ayana Ghosh,
Kevin M. Roccapriore,
Sudhajit Misra,
Kai Xiao,
Stephen Jesse,
Maxim Ziatdinov,
Sergei V. Kalinin,
Raymond R. Unocic
Abstract:
Directed atomic fabrication using an aberration-corrected scanning transmission electron microscope (STEM) opens new pathways for atomic engineering of functional materials. In this approach, the electron beam is used to actively alter the atomic structure through electron beam induced irradiation processes. One of the impediments that has limited widespread use thus far has been the ability to un…
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Directed atomic fabrication using an aberration-corrected scanning transmission electron microscope (STEM) opens new pathways for atomic engineering of functional materials. In this approach, the electron beam is used to actively alter the atomic structure through electron beam induced irradiation processes. One of the impediments that has limited widespread use thus far has been the ability to understand the fundamental mechanisms of atomic transformation pathways at high spatiotemporal resolution. Here, we develop a workflow for obtaining and analyzing high-speed spiral scan STEM data, up to 100 fps, to track the atomic fabrication process during nanopore milling in monolayer MoS2. An automated feedback-controlled electron beam positioning system combined with deep convolution neural network (DCNN) was used to decipher fast but low signal-to-noise datasets and classify time-resolved atom positions and nature of their evolving atomic defect configurations. Through this automated decoding, the initial atomic disordering and reordering processes leading to nanopore formation was able to be studied across various timescales. Using these experimental workflows a greater degree of speed and information can be extracted from small datasets without compromising spatial resolution. This approach can be adapted to other 2D materials systems to gain further insights into the defect formation necessary to inform future automated fabrication techniques utilizing the STEM electron beam.
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Submitted 12 October, 2023;
originally announced October 2023.
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Controlling hydrocarbon transport and electron beam induced deposition on single layer graphene: toward atomic scale synthesis in the scanning transmission electron microscope
Authors:
Ondrej Dyck,
Andrew R. Lupini,
Philip D. Rack,
Jason Fowlkes,
Stephen Jesse
Abstract:
Focused electron beam induced deposition (FEBID) is a direct write technique for depositing materials on a support substrate akin to 3D printing with an electron beam (e-beam). Opportunities exist for merging this existing technique with aberration-corrected scanning transmission electron microscopy to achieve molecular- or atomic-level spatial precision. Several demonstrations have been performed…
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Focused electron beam induced deposition (FEBID) is a direct write technique for depositing materials on a support substrate akin to 3D printing with an electron beam (e-beam). Opportunities exist for merging this existing technique with aberration-corrected scanning transmission electron microscopy to achieve molecular- or atomic-level spatial precision. Several demonstrations have been performed using graphene as the support substrate. A common challenge that arises during this process is e-beam-induced hydrocarbon deposition, suggesting greater control over the sample environment is needed. Various strategies exist for cleaning graphene in situ. One of the most effective methods is to rapidly heat to high temperatures, e.g., 600 C or higher. While this can produce large areas of what appears to be atomically clean graphene, mobile hydrocarbons can still be present on the surfaces. Here, we show that these hydrocarbons are primarily limited to surface migration and demonstrate an effective method for interrupting the flow using e-beam deposition to form corralled hydrocarbon regions. This strategy is effective for maintaining atomically clean graphene at high temperatures where hydrocarbon mobility can lead to substantial accumulation of unwanted e-beam deposition.
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Submitted 11 July, 2023;
originally announced July 2023.
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Do** transition-metal atoms in graphene for atomic-scale tailoring of electronic, magnetic, and quantum topological properties
Authors:
Ondrej Dyck,
Lizhi Zhang,
Mina Yoon,
Jacob L. Swett,
Dale Hensley,
Cheng Zhang,
Philip D. Rack,
Jason D. Fowlkes,
Andrew R. Lupini,
Stephen Jesse
Abstract:
Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing grap…
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Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the positioning of single atoms, provide a stabilizing scaffold to hold structures in place, and understand the details of their chemical bonding. Free-standing graphene offers a simplified platform for the development of atomic-scale fabrication and the focused electron beam in a scanning transmission electron microscope can be used to locally induce defects and sculpt the graphene. In this scenario, the graphene forms the stabilizing scaffold and the experimental question is whether a range of dopant atoms can be attached and incorporated into the lattice using a single technique and, from a theoretical perspective, we would like to know which dopants will create technologically interesting properties. Here, we demonstrate that the electron beam can be used to selectively and precisely insert a variety of transition metal atoms into graphene with highly localized control over the do** locations. We use first-principles density functional theory calculations with direct observation of the created structures to reveal the energetics of incorporating metal atoms into graphene and their magnetic, electronic, and quantum topological properties.
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Submitted 11 July, 2023;
originally announced July 2023.
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Do** of Cr in Graphene Using Electron Beam Manipulation for Functional Defect Engineering
Authors:
Ondrej Dyck,
Mina Yoon,
Lizhi Zhang,
Andrew R. Lupini,
Jacob L. Swett,
Stephen Jesse
Abstract:
Chromium atoms in graphene have been proposed to exhibit magnetic moments and spin-selective conducting states depending on the local bonding geometry within the graphene structure, which could lead to interesting applications in spintronics. Despite this interest, there are few direct experimental reports of Cr dopants in graphene even though it is theorized to be stable. Here, we demonstrate the…
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Chromium atoms in graphene have been proposed to exhibit magnetic moments and spin-selective conducting states depending on the local bonding geometry within the graphene structure, which could lead to interesting applications in spintronics. Despite this interest, there are few direct experimental reports of Cr dopants in graphene even though it is theorized to be stable. Here, we demonstrate the introduction of single Cr dopant atoms into the graphene lattice and onto graphene edges through the controlled use of a focused electron beam in a scanning transmission electron microscope. We show local control of do** locations and when coupled with targeted in situ milling during scanning of the e-beam, these strategies demonstrate an important component of the fabrication of tailored nanostructured devices in the electron microscope. The approach is validated with first principles calculations to understand synthesis pathways during fabrication and reveal the energetics and local properties of Cr atoms embedded in graphene; e.g., Cr do** can convert graphene into a magnetic and semiconducting material, which suggests Cr-doped graphene can be used as a building block for potential electronic devices and a means to construct them.
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Submitted 11 July, 2023;
originally announced July 2023.
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The role of temperature on defect diffusion and nanoscale patterning in graphene
Authors:
Ondrej Dyck,
Sinchul Yeom,
Sarah Dillender,
Andrew R. Lupini,
Mina Yoon,
Stephen Jesse
Abstract:
Graphene is of great scientific interest due to a variety of unique properties such as ballistic transport, spin selectivity, the quantum hall effect, and other quantum properties. Nanopatterning and atomic scale modifications of graphene are expected to enable further control over its intrinsic properties, providing ways to tune the electronic properties through geometric and strain effects, intr…
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Graphene is of great scientific interest due to a variety of unique properties such as ballistic transport, spin selectivity, the quantum hall effect, and other quantum properties. Nanopatterning and atomic scale modifications of graphene are expected to enable further control over its intrinsic properties, providing ways to tune the electronic properties through geometric and strain effects, introduce edge states and other local or extended topological defects, and sculpt circuit paths. The focused beam of a scanning transmission electron microscope (STEM) can be used to remove atoms, enabling milling, do**, and deposition. Utilization of a STEM as an atomic scale fabrication platform is increasing; however, a detailed understanding of beam-induced processes and the subsequent cascade of aftereffects is lacking. Here, we examine the electron beam effects on atomically clean graphene at a variety of temperatures ranging from 400 to 1000 C. We find that temperature plays a significant role in the milling rate and moderates competing processes of carbon adatom coalescence, graphene healing, and the diffusion (and recombination) of defects. The results of this work can be applied to a wider range of 2D materials and introduce better understanding of defect evolution in graphite and other bulk layered materials.
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Submitted 11 July, 2023;
originally announced July 2023.
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A platform for in situ synthesis in a STEM
Authors:
Ondrej Dyck,
Andrew R. Lupini,
Stephen Jesse
Abstract:
The engineering of quantum materials requires the development of tools able to address various synthesis and characterization challenges. These include the establishment and refinement of growth methods, material manipulation, and defect engineering. Material modification at the atomic level will be a key enabling factor for the engineering of quantum materials where desired phenomena are critical…
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The engineering of quantum materials requires the development of tools able to address various synthesis and characterization challenges. These include the establishment and refinement of growth methods, material manipulation, and defect engineering. Material modification at the atomic level will be a key enabling factor for the engineering of quantum materials where desired phenomena are critically determined by local atomic structures. Successful use of scanning transmission electron microscopes (STEMs) for atomic scale material manipulation has opened the door for a transformed view of what can be accomplished using electron-beam-based strategies. However, serious obstacles exist on the pathway from possibility to practical reality. One such obstacle is the in situ delivery of atomized material in the STEM to the region of interest for further fabrication processes. Here, we present progress on this front with a view toward performing synthesis (deposition and growth) processes in a scanning transmission electron microscope. An in situ thermal deposition platform is presented, tested, and deposition and growth processes are demonstrated. In particular, we show that isolated Sn atoms can be evaporated from a filament and caught on the nearby sample, demonstrating atomized material delivery. This platform, and future variations, are envisioned to facilitate real-time atomic resolution imaging of growth processes and open new pathways toward atomic fabrication.
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Submitted 27 February, 2023;
originally announced February 2023.
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The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication
Authors:
Ondrej Dyck,
Andrew R. Lupini,
Stephen Jesse
Abstract:
The scanning transmission electron microscope, a workhorse instrument in materials characterization, is being transformed into an atomic-scale material manipulation platform. With an eye on the trajectory of recent developments and the obstacles toward progress in this field, we provide a vision for a path toward an expanded set of capabilities and applications. We reconceptualize the microscope a…
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The scanning transmission electron microscope, a workhorse instrument in materials characterization, is being transformed into an atomic-scale material manipulation platform. With an eye on the trajectory of recent developments and the obstacles toward progress in this field, we provide a vision for a path toward an expanded set of capabilities and applications. We reconceptualize the microscope as an instrument for fabrication and synthesis with the capability to image and characterize atomic-scale structural formation as it occurs. Further development and refinement of this approach may have substantial impact on research in microelectronics, quantum information science, and catalysis where precise control over atomic scale structure and chemistry of a few "active sites" can have a dramatic impact on larger scale functionality and where develo** a better understanding of atomic scale processes can help point the way to larger scale synthesis approaches.
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Submitted 30 May, 2023; v1 submitted 16 February, 2023;
originally announced February 2023.
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Direct-Writing Atom-by-Atom
Authors:
Ondrej Dyck,
Andrew R. Lupini,
Stephen Jesse
Abstract:
Direct-write processes enable the alteration or deposition of materials in a continuous, directable, sequential fashion. In this work we demonstrate an electron beam direct-write process in an aberration-corrected scanning transmission electron microscope. This process has several fundamental differences from conventional electron beam induced deposition techniques, where the electron beam dissoci…
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Direct-write processes enable the alteration or deposition of materials in a continuous, directable, sequential fashion. In this work we demonstrate an electron beam direct-write process in an aberration-corrected scanning transmission electron microscope. This process has several fundamental differences from conventional electron beam induced deposition techniques, where the electron beam dissociates precursor gases into chemically reactive products that bond to a substrate. Here, we use elemental tin (Sn) as a precursor and employ a different mechanism to facilitate deposition. The atomic-sized electron beam is used to generate chemically reactive point defects at desired locations in a graphene substrate. Temperature control of the sample is used to enable the precursor atoms to migrate across the surface and bond to the defect sites thereby enabling atom-by-atom direct-writing.
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Submitted 20 March, 2023; v1 submitted 6 January, 2023;
originally announced January 2023.
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Top-down fabrication of atomic patterns in twisted bilayer graphene
Authors:
Ondrej Dyck,
Sinchul Yeom,
Andrew R. Lupini,
Jacob L. Swett,
Dale Hensley,
Mina Yoon,
Stephen Jesse
Abstract:
Atomic-scale engineering typically involves bottom-up approaches, leveraging parameters such as temperature, partial pressures, and chemical affinity to promote spontaneous arrangement of atoms. These parameters are applied globally, resulting in atomic scale features scattered probabilistically throughout the material. In a top-down approach, different regions of the material are exposed to diffe…
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Atomic-scale engineering typically involves bottom-up approaches, leveraging parameters such as temperature, partial pressures, and chemical affinity to promote spontaneous arrangement of atoms. These parameters are applied globally, resulting in atomic scale features scattered probabilistically throughout the material. In a top-down approach, different regions of the material are exposed to different parameters resulting in structural changes varying on the scale of the resolution. In this work, we combine the application of global and local parameters in an aberration corrected scanning transmission electron microscope (STEM) to demonstrate atomic scale precision patterning of atoms in twisted bilayer graphene. The focused electron beam is used to define attachment points for foreign atoms through the controlled ejection of carbon atoms from the graphene lattice. The sample environment is staged with nearby source materials, such that the sample temperature can induce migration of the source atoms across the sample surface. Under these conditions, the electron-beam (top-down) enables carbon atoms in the graphene to be replaced spontaneously by diffusing adatoms (bottom-up). Using image-based feedback-control, arbitrary patterns of atoms and atom clusters are attached to the twisted bilayer graphene with limited human interaction. The role of substrate temperature on adatom and vacancy diffusion is explored by first-principles simulations.
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Submitted 4 January, 2023;
originally announced January 2023.
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Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope
Authors:
Ondrej Dyck,
Jawaher Almutlaq,
Jacob L. Swett,
Andrew R. Lupini,
Dirk Englund,
Stephen Jesse
Abstract:
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure devic…
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Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution using a technique known as secondary electron e-beam-induced current (SEEBIC). Here, we apply the SEEBIC imaging technique to a stacked 2D heterostructure device to reveal the spatially resolved electron orbital ionization cross section of an encapsulated WSe2 layer. We find that the double Se lattice site shows higher emission than the W site, which is at odds with first-principles modelling of ionization of an isolated WSe2 cluster. These results illustrate that atomic level SEEBIC contrast within a single material is possible and that an enhanced understanding of atomic scale SE emission is required to account for the observed contrast. In turn, this suggests that subtle information about interlayer bonding and the effect on electron orbitals can be directly revealed with this technique.
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Submitted 1 December, 2022;
originally announced December 2022.
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Probing temperature-induced phase transitions at individual ferroelectric domain walls
Authors:
Kyle P. Kelley,
Sergei V. Kalinin,
Eugene Eliseev,
Shivaranjan Raghuraman,
Stephen Jesse,
Peter Maksymovych,
Anna N. Morozovska
Abstract:
Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) wit…
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Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) with a dynamically heated probe, combining local heating and local biasing of the material. This approach is used to explore the thermal polarization dynamics in soft Sn2P2S6 ferroelectrics, and allows for the exploration of phase transitions at individual domain walls. The strong and weak modulation regimes for the thermal PFM are introduced. The future potential applications of heated probe approach for functional SPM measurements including piezoelectric, elastic, microwave, and transport measurements are discussed.
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Submitted 7 July, 2022;
originally announced July 2022.
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Electron-beam Introduction of Heteroatomic Pt-Si Structures in Graphene
Authors:
Ondrej Dyck,
Cheng Zhang,
Philip D. Rack,
Jason D. Fowlkes,
Bobby Sumpter,
Andrew R. Lupini,
Sergei V. Kalinin,
Stephen Jesse
Abstract:
Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In s…
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Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In situ dopant insertion into a graphene lattice has thus far been demonstrated only for Si, which is ubiquitously present as a contaminant in this material. Here, we achieve in situ manipulation of Pt atoms and their insertion into the graphene host matrix using the e-beam deposited Pt on graphene as a host system. We further demonstrate a mechanism for stabilization of the Pt atom, enabled through the formation of Si-stabilized Pt heteroatomic clusters attached to the graphene surface. This study provides evidence toward the universality of the e-beam assembly approach, opening a pathway for exploring cluster chemistry through direct assembly.
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Submitted 17 March, 2022;
originally announced March 2022.
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Map** Conductance and Switching Behavior of Graphene Devices In Situ
Authors:
Ondrej Dyck,
Jacob L. Swett,
Charalambos Evangeli,
Andrew R. Lupini,
Jan A. Mol,
Stephen Jesse
Abstract:
Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we p…
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Graphene has been proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become non-trivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, we present proof of principle results at the crossroads between 2D nanoelectronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC). We introduce a device platform compatible with scanning transmission electron microscopy investigations. We then show how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails). Finally, we show that the SEEBIC imaging technique can detect subtle differences in charge transport through time in non-ohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.
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Submitted 17 March, 2022;
originally announced March 2022.
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Contrast mechanisms in secondary electron e-beam induced current (SEEBIC) imaging
Authors:
Ondrej Dyck,
Jacob L. Swett,
Charalambos Evangeli,
Andrew R. Lupini,
Jan Mol,
Stephen Jesse
Abstract:
Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, t…
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Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy (SEM)-based technique, electron beam induced current (EBIC) imaging except the signal in STEM is generated by the emission of SEs, hence the name SEEBIC, and in this case the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.
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Submitted 15 March, 2022;
originally announced March 2022.
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Van der Waals Epitaxy on Freestanding Monolayer Graphene Membrane by MBE
Authors:
Jason Lapano,
Ondrej Dyck,
Andrew Lupini,
Wonhee Ko,
Haoxiang Li,
Hu Miao,
Ho Nyung Lee,
An-** Li,
Matthew Brahlek,
Stephen Jesse,
Robert G. Moore
Abstract:
Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this…
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Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this potential are the challenges in controlling the atomic structure of these layered hybrid materials and the difficulties in harnessing their unique functionality with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This templated synthesis approach enables direct interrogation of interfacial atomic structure of these as-grown hybrid structures and opens a route towards creating device structures with more traditional semiconductor nanofabrication techniques.
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Submitted 29 March, 2021;
originally announced March 2021.
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Automated and Autonomous Experiment in Electron and Scanning Probe Microscopy
Authors:
Sergei V. Kalinin,
Maxim A. Ziatdinov,
Jacob Hinkle,
Stephen Jesse,
Ayana Ghosh,
Kyle P. Kelley,
Andrew R. Lupini,
Bobby G. Sumpter,
Rama K. Vasudevan
Abstract:
Machine learning and artificial intelligence (ML/AI) are rapidly becoming an indispensable part of physics research, with domain applications ranging from theory and materials prediction to high-throughput data analysis. In parallel, the recent successes in applying ML/AI methods for autonomous systems from robotics through self-driving cars to organic and inorganic synthesis are generating enthus…
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Machine learning and artificial intelligence (ML/AI) are rapidly becoming an indispensable part of physics research, with domain applications ranging from theory and materials prediction to high-throughput data analysis. In parallel, the recent successes in applying ML/AI methods for autonomous systems from robotics through self-driving cars to organic and inorganic synthesis are generating enthusiasm for the potential of these techniques to enable automated and autonomous experiment (AE) in imaging. Here, we aim to analyze the major pathways towards AE in imaging methods with sequential image formation mechanisms, focusing on scanning probe microscopy (SPM) and (scanning) transmission electron microscopy ((S)TEM). We argue that automated experiments should necessarily be discussed in a broader context of the general domain knowledge that both informs the experiment and is increased as the result of the experiment. As such, this analysis should explore the human and ML/AI roles prior to and during the experiment, and consider the latencies, biases, and knowledge priors of the decision-making process. Similarly, such discussion should include the limitations of the existing imaging systems, including intrinsic latencies, non-idealities and drifts comprising both correctable and stochastic components. We further pose that the role of the AE in microscopy is not the exclusion of human operators (as is the case for autonomous driving), but rather automation of routine operations such as microscope tuning, etc., prior to the experiment, and conversion of low latency decision making processes on the time scale spanning from image acquisition to human-level high-order experiment planning.
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Submitted 22 March, 2021;
originally announced March 2021.
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Autonomous Experiments in Scanning Probe Microscopy and Spectroscopy: Choosing Where to Explore Polarization Dynamics in Ferroelectrics
Authors:
Rama K. Vasudevan,
Kyle Kelley,
Jacob Hinkle,
Hiroshi Funakubo,
Stephen Jesse,
Sergei V. Kalinin,
Maxim Ziatdinov
Abstract:
Polarization dynamics in ferroelectric materials are explored via the automated experiment in Piezoresponse Force Spectroscopy. A Bayesian Optimization framework for imaging is developed and its performance for a variety of acquisition and pathfinding functions is explored using previously acquired data. The optimized algorithm is then deployed on an operational scanning probe microscope (SPM) for…
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Polarization dynamics in ferroelectric materials are explored via the automated experiment in Piezoresponse Force Spectroscopy. A Bayesian Optimization framework for imaging is developed and its performance for a variety of acquisition and pathfinding functions is explored using previously acquired data. The optimized algorithm is then deployed on an operational scanning probe microscope (SPM) for finding areas of large electromechanical response in a thin film of PbTiO3, with metrics showing gains of ~3x in the sampling efficiency. This approach opens the pathway to perform more complex spectroscopies in SPM that were previously not possible due to time constraints and sample stability, tip wear, and/or stochastic sample damage that occurs at specific, a priori unknown spatial positions. Potential improvements to the framework to enable the incorporation of more prior information and improve efficiency further are discussed.
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Submitted 22 June, 2021; v1 submitted 25 November, 2020;
originally announced November 2020.
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Exploring order parameters and dynamic processes in disordered systems via variational autoencoders
Authors:
Sergei V. Kalinin,
Ondrej Dyck,
Stephen Jesse,
Maxim Ziatdinov
Abstract:
We suggest and implement an approach for the bottom-up description of systems undergoing large-scale structural changes and chemical transformations from dynamic atomically resolved imaging data, where only partial or uncertain data on atomic positions are available. This approach is predicated on the synergy of two concepts, the parsimony of physical descriptors and general rotational invariance…
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We suggest and implement an approach for the bottom-up description of systems undergoing large-scale structural changes and chemical transformations from dynamic atomically resolved imaging data, where only partial or uncertain data on atomic positions are available. This approach is predicated on the synergy of two concepts, the parsimony of physical descriptors and general rotational invariance of non-crystalline solids, and is implemented using a rotationally-invariant extension of the variational autoencoder applied to semantically segmented atom-resolved data seeking the most effective reduced representation for the system that still contains the maximum amount of original information. This approach allowed us to explore the dynamic evolution of electron beam-induced processes in a silicon-doped graphene system, but it can be also applied for a much broader range of atomic-scale and mesoscopic phenomena to introduce the bottom-up order parameters and explore their dynamics with time and in response to external stimuli.
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Submitted 13 April, 2021; v1 submitted 18 June, 2020;
originally announced June 2020.
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Fast Scanning Probe Microscopy via Machine Learning: Non-rectangular scans with compressed sensing and Gaussian process optimization
Authors:
Kyle P. Kelley,
Maxim Ziatdinov,
Liam Collins,
Michael A. Susner,
Rama K. Vasudevan,
Nina Balke,
Sergei V. Kalinin,
Stephen Jesse
Abstract:
Fast scanning probe microscopy enabled via machine learning allows for a broad range of nanoscale, temporally resolved physics to be uncovered. However, such examples for functional imaging are few in number. Here, using piezoresponse force microscopy (PFM) as a model application, we demonstrate a factor of 5.8 improvement in imaging rate using a combination of sparse spiral scanning with compress…
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Fast scanning probe microscopy enabled via machine learning allows for a broad range of nanoscale, temporally resolved physics to be uncovered. However, such examples for functional imaging are few in number. Here, using piezoresponse force microscopy (PFM) as a model application, we demonstrate a factor of 5.8 improvement in imaging rate using a combination of sparse spiral scanning with compressive sensing and Gaussian processing reconstruction. It is found that even extremely sparse scans offer strong reconstructions with less than 6 % error for Gaussian processing reconstructions. Further, we analyze the error associated with each reconstructive technique per reconstruction iteration finding the error is similar past approximately 15 iterations, while at initial iterations Gaussian processing outperforms compressive sensing. This study highlights the capabilities of reconstruction techniques when applied to sparse data, particularly sparse spiral PFM scans, with broad applications in scanning probe and electron microscopies.
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Submitted 23 April, 2020;
originally announced April 2020.
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To switch or not to switch -- a machine learning approach for ferroelectricity
Authors:
Sabine M. Neumayer,
Stephen Jesse,
Gabriel Velarde,
Andrei L. Kholkin,
Ivan Kravchenko,
Lane W. Martin,
Nina Balke,
Peter Maksymovych
Abstract:
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in multidimensional data sets spanning a range of experimental parameters. As an example, a common approach to study ferroelectric switching is to observe effects of…
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With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in multidimensional data sets spanning a range of experimental parameters. As an example, a common approach to study ferroelectric switching is to observe effects of applied electric field, but switching can also be enacted by pressure and is influenced by strain fields, material composition, temperature, time, etc. Moreover, the parameters are usually interdependent, so that their decoupling toward univariate measurements or analysis may not be straightforward. On the other hand, both explicit and hidden parameters provide an opportunity to gain deeper insight into the measured properties, provided there exists a well-defined path to capture and analyze such data. Here, we introduce a new, two-dimensional approach to represent hysteretic response of a material system to applied electric field. Utilizing ferroelectric polarization as a model hysteretic property, we demonstrate how explicit consideration of electromechanical response to two rather than one control voltages enables significantly more transparent and robust interpretation of observed hysteresis, such as differentiating between charge trap** and ferroelectricity. Furthermore, we demonstrate how the new data representation readily fits into a variety of machinelearning methodologies, from unsupervised classification of the origins of hysteretic response via linear clustering algorithms to neural-network-based inference of the sample temperature based on the specific morphology of hysteresis.
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Submitted 17 April, 2020;
originally announced April 2020.
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Reconstruction of effective potential from statistical analysis of dynamic trajectories
Authors:
Ali Yousefzadi Nobakht,
Ondrej Dyck,
David B. Lingerfelt,
Feng Bao,
Maxim Ziatdinov,
Artem Maksov,
Bobby G. Sumpter,
Richard Archibald,
Stephen Jesse,
Sergei V. Kalinin,
Kody J. H. Law
Abstract:
The broad incorporation of microscopic methods is yielding a wealth of information on atomic and mesoscale dynamics of individual atoms, molecules, and particles on surfaces and in open volumes. Analysis of such data necessitates statistical frameworks to convert observed dynamic behaviors to effective properties of materials. Here we develop a method for stochastic reconstruction of effective act…
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The broad incorporation of microscopic methods is yielding a wealth of information on atomic and mesoscale dynamics of individual atoms, molecules, and particles on surfaces and in open volumes. Analysis of such data necessitates statistical frameworks to convert observed dynamic behaviors to effective properties of materials. Here we develop a method for stochastic reconstruction of effective acting potentials from observed trajectories. Using the Silicon vacancy defect in graphene as a model, we develop a statistical framework to reconstruct the free energy landscape from calculated atomic displacements.
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Submitted 27 February, 2020;
originally announced February 2020.
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Deep learning of interface structures from the 4D STEM data: cation intermixing vs. roughening
Authors:
Mark P. Oxley,
Junqi Yin,
Nikolay Borodinov,
Suhas Somnath,
Maxim Ziatdinov,
Andrew R. Lupini,
Stephen Jesse,
Rama K. Vasudevan,
Sergei V. Kalinin
Abstract:
Interface structures in complex oxides remain one of the active areas of condensed matter physics research, largely enabled by recent advances in scanning transmission electron microscopy (STEM). Yet the nature of the STEM contrast in which the structure is projected along the given direction precludes separation of possible structural models. Here, we utilize deep convolutional neural networks (D…
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Interface structures in complex oxides remain one of the active areas of condensed matter physics research, largely enabled by recent advances in scanning transmission electron microscopy (STEM). Yet the nature of the STEM contrast in which the structure is projected along the given direction precludes separation of possible structural models. Here, we utilize deep convolutional neural networks (DCNN) trained on simulated 4D scanning transmission electron microscopy (STEM) datasets to predict structural descriptors of interfaces. We focus on the widely studied interface between LaAlO3 and SrTiO3, using dynamical diffraction theory and leveraging high performance computing to simulate thousands of possible 4D STEM datasets to train the DCNN to learn properties of the underlying structures on which the simulations are based. We validate the DCNN on simulated data and show that it is possible (with >95% accuracy) to identify a physically rough from a chemically diffuse interface and achieve 85% accuracy in determination of buried step positions within the interface. The method shown here is general and can be applied for any inverse imaging problem where forward models are present.
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Submitted 20 February, 2020;
originally announced February 2020.
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Bayesian inference in band excitation Scanning Probe Microscopy for optimal dynamic model selection in imaging
Authors:
Rama K. Vasudevan,
Kyle P. Kelley,
Eugene Eliseev,
Stephen Jesse,
Hiroshi Funakubo,
Anna Morozovska,
Sergei V. Kalinin
Abstract:
The universal tendency in scanning probe microscopy (SPM) over the last two decades is to transition from simple 2D imaging to complex detection and spectroscopic imaging modes. The emergence of complex SPM engines brings forth the challenge of reliable data interpretation, i.e. conversion from detected signal to descriptors specific to tip-surface interactions and subsequently to materials proper…
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The universal tendency in scanning probe microscopy (SPM) over the last two decades is to transition from simple 2D imaging to complex detection and spectroscopic imaging modes. The emergence of complex SPM engines brings forth the challenge of reliable data interpretation, i.e. conversion from detected signal to descriptors specific to tip-surface interactions and subsequently to materials properties. Here, we implemented a Bayesian inference approach for the analysis of the image formation mechanisms in band excitation (BE) SPM. Compared to the point estimates in classical functional fit approaches, Bayesian inference allows for the incorporation of extant knowledge of materials and probe behavior in the form of corresponding prior distribution and return the information on the material functionality in the form of readily interpretable posterior distributions. We note that in application of Bayesian methods, special care should be made for proper setting on the problem as model selection vs. establishing practical parameter equivalence. We further explore the non-linear mechanical behaviors at topological defects in a classical ferroelectric material, PbTiO3. We observe the non-trivial evolution of Duffing resonance frequency and the nonlinearity of the sample surface, suggesting the presence of the hidden elements of domain structure. These observations suggest that the spectrum of anomalous behaviors at the ferroelectric domain walls can be significantly broader than previously believed and can extend to non-conventional mechanical properties in addition to static and microwave conductance.
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Submitted 19 February, 2020;
originally announced February 2020.
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Reconstruction of the interatomic forces from dynamic Scanning Transmission Electron Microscopy data
Authors:
M. Chakraborty,
M. Ziatdinov,
O. Dyck,
S. Jesse,
A. D. White,
S. V. Kalinin
Abstract:
We explore the possibility for the reconstruction of the generative physical models describing interactions between atomic units in solids from observational electron microscopy data. Here, scanning transmission electron microscopy (STEM) is used to observe the dynamic motion of Si atoms at the edge of monolayer graphene under continuous electron beam illumination. The resulting time-lapsed STEM i…
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We explore the possibility for the reconstruction of the generative physical models describing interactions between atomic units in solids from observational electron microscopy data. Here, scanning transmission electron microscopy (STEM) is used to observe the dynamic motion of Si atoms at the edge of monolayer graphene under continuous electron beam illumination. The resulting time-lapsed STEM images represent the snapshots of observed chemical states of the system. We use two approaches: potential of mean force (PMF) calculation using a radial distribution function (RDF) and a direct fitting of the graphene-Si interatomic pair-wise potentials with force matching, to reconstruct the force fields in the materials. These studies lay the foundation for quantitative analysis of materials energetics from STEM data through the sampling of the metastable states in the chemical space of the system.
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Submitted 30 January, 2021; v1 submitted 13 February, 2020;
originally announced February 2020.
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Super-resolution and signal separation in contact Kelvin probe force microscopy of electrochemically active ferroelectric materials
Authors:
Maxim Ziatdinov,
Dohyung Kim,
Sabine Neumayer,
Liam Collins,
Mahshid Ahmadi,
Rama K. Vasudevan,
Stephen Jesse,
Myung Hyun Ann,
Jong H. Kim,
Sergei V. Kalinin
Abstract:
Imaging mechanisms in contact Kelvin Probe Force Microscopy (cKPFM) are explored via information theory-based methods. Gaussian Processes are used to achieve super-resolution in the cKPFM signal, effectively extrapolating across the spatial and parameter space. Tensor matrix factorization is applied to reduce the multidimensional signal to the tensor convolution of the scalar functions that show c…
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Imaging mechanisms in contact Kelvin Probe Force Microscopy (cKPFM) are explored via information theory-based methods. Gaussian Processes are used to achieve super-resolution in the cKPFM signal, effectively extrapolating across the spatial and parameter space. Tensor matrix factorization is applied to reduce the multidimensional signal to the tensor convolution of the scalar functions that show clear trending behavior with the imaging parameters. These methods establish a workflow for the analysis of the multidimensional data sets, that can then be related to the relevant physical mechanisms. We also provide an interactive Google Colab notebook (http://bit.ly/39kMtuR) that goes through all the analysis discussed in the paper.
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Submitted 9 August, 2020; v1 submitted 10 February, 2020;
originally announced February 2020.
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Dynamic manipulation in piezoresponse force microscopy: creating non-equilibrium phases with large electromechanical response
Authors:
Kyle P. Kelley,
Yao Ren,
Anna N. Morozovska,
Eugene A. Eliseev,
Yoshitaka Ehara,
Hiroshi Funakubo,
Thierry Giamarchi,
Nina Balke,
Rama K. Vasudevan,
Ye Cao,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, a…
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Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies. However, the dynamic nature of these features severely limits studies of their local physics since application of local biases or pressures in piezoresponse force microscopy induce wall displacement as a primary response. Here, we introduce a fundamentally new approach for the control and modification of domain structures based on automated experimentation whereby real space image-based feedback is used to control the tip bias during ferroelectric switching, allowing for modification routes conditioned on domain states under the tip. This automated experiment approach is demonstrated for the exploration of domain wall dynamics and creation of metastable phases with large electromechanical response.
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Submitted 10 January, 2020;
originally announced January 2020.
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Direct matter disassembly via electron beam control: Electron-beam-mediated catalytic etching of graphene by nanoparticles
Authors:
Ondrej Dyck,
David Lingerfelt,
Songkil Kim,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
We report electron-beam activated motion of a catalytic nanoparticle along a graphene step edge and associated etching of the edge. This approach enables beam-controlled etching of matter through activated electrocatalytic processes. The applications of electron-beam control as a paradigm for molecular-scale robotics are discussed.
We report electron-beam activated motion of a catalytic nanoparticle along a graphene step edge and associated etching of the edge. This approach enables beam-controlled etching of matter through activated electrocatalytic processes. The applications of electron-beam control as a paradigm for molecular-scale robotics are discussed.
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Submitted 16 December, 2019;
originally announced December 2019.
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Piezoresponse phase as variable in electromechanical characterization
Authors:
Sabine M. Neumayer,
Sahar Saremi,
Lane W. Martin,
Liam Collins,
Alexander Tselev,
Stephen Jesse,
Sergei V. Kalinin,
Nina Balke
Abstract:
Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort…
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Piezoresponse force microscopy (PFM) is a powerful characterization technique to readily image and manipulate ferroelectrics domains. PFM gives insight into the strength of local piezoelectric coupling as well as polarization direction through PFM amplitude and phase, respectively. Converting measured arbitrary units to physical material parameters, however, remains a challenge. While much effort has been spent on quantifying the PFM amplitude signal, little attention has been given to the PFM phase and it is often arbitrarily adjusted to fit expectations or processed as recorded. This is problematic when investigating materials with unknown or potentially negative sign of the probed effective electrostrictive coefficient or strong frequency dispersion of electromechanical responses since assumptions about the phase cannot be reliably made. The PFM phase can, however, provide important information on the polarization orientation and the sign of the electrostrictive coefficient. Most notably, the orientation of the PFM hysteresis loop is determined by the PFM phase. Moreover, when presenting PFM data as a combined signal, the resulting response can be artificially lowered or asymmetric if the phase data has not been correctly processed. Here, we demonstrate a path to identify the phase offset required to extract correct meaning from PFM phase data. We explore different sources of phase offsets including the experimental setup, instrumental contributions, and data analysis. We discuss the physical working principles of PFM and develop a strategy to extract physical meaning from the PFM phase. The proposed procedures are verified on two materials with positive and negative piezoelectric coefficients.
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Submitted 6 December, 2019;
originally announced December 2019.
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Imaging Mechanism for Hyperspectral Scanning Probe Microscopy via Gaussian Process Modelling
Authors:
Maxim Ziatdinov,
Dohyung Kim,
Sabine Neumayer,
Rama K. Vasudevan,
Liam Collins,
Stephen Jesse,
Mahshid Ahmadi,
Sergei V. Kalinin
Abstract:
We investigate the ability to reconstruct and derive spatial structure from sparsely sampled 3D piezoresponse force microcopy data, captured using the band-excitation (BE) technique, via Gaussian Process (GP) methods. Even for weakly informative priors, GP methods allow unambiguous determination of the characteristic length scales of the imaging process both in spatial and frequency domains. We fu…
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We investigate the ability to reconstruct and derive spatial structure from sparsely sampled 3D piezoresponse force microcopy data, captured using the band-excitation (BE) technique, via Gaussian Process (GP) methods. Even for weakly informative priors, GP methods allow unambiguous determination of the characteristic length scales of the imaging process both in spatial and frequency domains. We further show that BE data set tends to be oversampled, with ~30% of the original data set sufficient for high-quality reconstruction, potentially enabling the faster BE imaging. Finally, we discuss how the GP can be used for automated experimentation in SPM, by combining GP regression with non-rectangular scans. The full code for GP regression applied to hyperspectral data is available at https://git.io/JePGr.
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Submitted 26 November, 2019;
originally announced November 2019.
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Atomic mechanisms for the Si atom dynamics in graphene: chemical transformations at the edge and in the bulk
Authors:
Maxim Ziatdinov,
Ondrej Dyck,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Recent advances in scanning transmission electron microscopy (STEM) allow to observe solid-state transformations and reactions in materials induced by thermal stimulus or electron beam on the atomic level. However, despite the rate at which large volumes of data can be generated (sometimes in the gigabyte to terabyte range per single experiment), approaches for the extraction of material-specific…
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Recent advances in scanning transmission electron microscopy (STEM) allow to observe solid-state transformations and reactions in materials induced by thermal stimulus or electron beam on the atomic level. However, despite the rate at which large volumes of data can be generated (sometimes in the gigabyte to terabyte range per single experiment), approaches for the extraction of material-specific knowledge on the kinetics and thermodynamics of these processes are still lacking. One of the critical issues lies in being able to map the evolution of various atomic structures and determine the associated transition probabilities directly from raw experimental data characterized by high levels of noise and missing structural elements. Here, we demonstrate an approach based on the combination of multiple machine learning techniques to study the dynamic behavior of e-beam irradiated Si atoms in the bulk and at the edges of single-layer graphene in STEM experiments. First, a deep learning network is used to convert experimental STEM movies into coordinates of individual Si and carbon atoms. Then, a Gaussian mixture model is further used to establish the elementary atomic configurations of the Si atoms, defining the bonding geometries and chemical species and accounting for the discrete rotational symmetry of the host lattice. Finally, the frequencies and Markov transition probabilities between these states are determined. This analysis enables insight into the thermodynamics of defect populations and chemical reaction networks from the atomically resolved STEM data. Here, we observe a clear tendency for the formation of a 1D Si crystal along zigzag direction of graphene edges and for the Si impurity coupling to topological defects in bulk graphene.
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Submitted 27 January, 2019;
originally announced January 2019.
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Manifold Learning of Four-dimensional Scanning Transmission Electron Microscopy
Authors:
Xin Li,
Ondrej E. Dyck,
Mark P. Oxley,
Andrew R. Lupini,
Leland McInnes,
John Healy,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Four-dimensional scanning transmission electron microscopy (4D-STEM) of local atomic diffraction patterns is emerging as a powerful technique for probing intricate details of atomic structure and atomic electric fields. However, efficient processing and interpretation of large volumes of data remain challenging, especially for two-dimensional or light materials because the diffraction signal recor…
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Four-dimensional scanning transmission electron microscopy (4D-STEM) of local atomic diffraction patterns is emerging as a powerful technique for probing intricate details of atomic structure and atomic electric fields. However, efficient processing and interpretation of large volumes of data remain challenging, especially for two-dimensional or light materials because the diffraction signal recorded on the pixelated arrays is weak. Here we employ data-driven manifold leaning approaches for straightforward visualization and exploration analysis of the 4D-STEM datasets, distilling real-space neighboring effects on atomically resolved deflection patterns from single-layer graphene, with single dopant atoms, as recorded on a pixelated detector. These extracted patterns relate to both individual atom sites and sublattice structures, effectively discriminating single dopant anomalies via multi-mode views. We believe manifold learning analysis will accelerate physics discoveries coupled between data-rich imaging mechanisms and materials such as ferroelectric, topological spin and van der Waals heterostructures.
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Submitted 13 January, 2019; v1 submitted 18 October, 2018;
originally announced November 2018.
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Tracking atomic structure evolution during directed electron beam induced Si-atom motion in graphene via deep machine learning
Authors:
Maxim Ziatdinov,
Stephen Jesse,
Bobby G. Sumpter,
Sergei V. Kalinin,
Ondrej Dyck
Abstract:
Using electron beam manipulation, we enable deterministic motion of individual Si atoms in graphene along predefined trajectories. Structural evolution during the dopant motion was explored, providing information on changes of the Si atom neighborhood during atomic motion and providing statistical information of possible defect configurations. The combination of a Gaussian mixture model and princi…
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Using electron beam manipulation, we enable deterministic motion of individual Si atoms in graphene along predefined trajectories. Structural evolution during the dopant motion was explored, providing information on changes of the Si atom neighborhood during atomic motion and providing statistical information of possible defect configurations. The combination of a Gaussian mixture model and principal component analysis applied to the deep learning-processed experimental data allowed disentangling of the atomic distortions for two different graphene sublattices. This approach demonstrates the potential of e-beam manipulation to create defect libraries of multiple realizations of the same defect and explore the potential of symmetry breaking physics. The rapid image analytics enabled via a deep learning network further empowers instrumentation for e-beam controlled atom-by-atom fabrication. The analysis described in the paper can be reproduced via an interactive Jupyter notebook at https://git.io/JJ3Bx
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Submitted 13 July, 2020; v1 submitted 13 September, 2018;
originally announced September 2018.
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Building and exploring libraries of atomic defects in graphene: scanning transmission electron and scanning tunneling microscopy study
Authors:
Maxim Ziatdinov,
Ondrej Dyck,
Bobby G. Sumpter,
Stephen Jesse,
Rama K. Vasudevan,
Sergei V. Kalinin
Abstract:
Population and distribution of defects is one of the primary parameters controlling materials functionality, are often non-ergodic and strongly dependent on synthesis history, and are rarely amenable to direct theoretical prediction. Here, dynamic electron beam-induced transformations in Si deposited on a graphene monolayer are used to create libraries of the possible Si and carbon vacancy defects…
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Population and distribution of defects is one of the primary parameters controlling materials functionality, are often non-ergodic and strongly dependent on synthesis history, and are rarely amenable to direct theoretical prediction. Here, dynamic electron beam-induced transformations in Si deposited on a graphene monolayer are used to create libraries of the possible Si and carbon vacancy defects. Automated image analysis and recognition based on deep learning networks is developed to identify and enumerate the defects, creating a library of (meta) stable defect configurations. The electronic properties of the sample surface are further explored by atomically resolved scanning tunneling microscopy (STM). Density functional theory is used to estimate the STM signatures of the classified defects from the created library, allowing for the identification of several defect types across the imaging platforms. This approach allows automatic creation of defect libraries in solids, exploring the metastable configurations always present in real materials, and correlative studies with other atomically-resolved techniques, providing comprehensive insight into defect functionalities. Such libraries will be of critical importance in automated AI-assisted workflows for materials prediction and atom-by atom manipulation via electron beams and scanning probes.
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Submitted 4 February, 2019; v1 submitted 12 September, 2018;
originally announced September 2018.
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Single atom force measurements: map** potential energy landscapes via electron beam induced single atom dynamics
Authors:
Ondrej Dyck,
Feng Bao,
Maxim Ziatdinov,
Ali Yousefzadi Nobakht,
Seungha Shin,
Kody Law,
Artem Maksov,
Bobby G. Sumpter,
Richard Archibald,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
In the last decade, the atomically focused beam of a scanning transmission electron microscope (STEM) was shown to induce a broad set of transformations of material structure, open pathways for probing atomic-scale reactions and atom-by-atom matter assembly. However, the mechanisms of beam-induced transformations remain largely unknown, due to an extreme mismatch between the energy and time scales…
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In the last decade, the atomically focused beam of a scanning transmission electron microscope (STEM) was shown to induce a broad set of transformations of material structure, open pathways for probing atomic-scale reactions and atom-by-atom matter assembly. However, the mechanisms of beam-induced transformations remain largely unknown, due to an extreme mismatch between the energy and time scales of electron passage through solids and atomic and molecular motion. Here, we demonstrate that a single dopant Si atom in the graphene lattice can be used as an atomic scale force sensor, providing information on the random force exerted by the beam on chemically-relevant time scales. Using stochastic reconstruction of molecular dynamic simulations, we recover the potential energy landscape of the atom and use it to determine the beam-induced effects in the thermal (i.e. white noise) approximation. We further demonstrate that the moving atom under beam excitation can be used to map potential energy along step edges, providing information about atomic-scale potentials in solids. These studies open the pathway for quantitative studies of beam-induced atomic dynamics, elementary mechanisms of solid-state transformations, and predictive atom-by-atom fabrication.
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Submitted 10 April, 2018;
originally announced April 2018.
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Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric
Authors:
Sabine M. Neumayer,
Eugene A. Eliseev,
Michael A. Susner,
Alexander Tselev,
Brian J. Rodriguez,
John A. Brehm,
Sokrates T. Pantelides,
Ganesh Panchapakesan,
Stephen Jesse,
Sergei V. Kalinin,
Michael A. McGuire,
Anna N. Morozovska,
Petro Maksymovych,
Nina Balke
Abstract:
The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q3…
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The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response.
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Submitted 1 February, 2019; v1 submitted 21 March, 2018;
originally announced March 2018.
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Deep Learning Analysis of Defect and Phase Evolution During Electron Beam Induced Transformations in WS2
Authors:
Artem Maksov,
Ondrej Dyck,
Kai Wang,
Kai Xiao,
David B. Geohegan,
Bobby G. Sumpter,
Rama K. Vasudevan,
Stephen Jesse,
Sergei V. Kalinin,
Maxim Ziatdinov
Abstract:
Understanding elementary mechanisms behind solid-state phase transformations and reactions is the key to optimizing desired functional properties of many technologically relevant materials. Recent advances in scanning transmission electron microscopy (STEM) allow the real-time visualization of solid-state transformations in materials, including those induced by an electron beam and temperature, wi…
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Understanding elementary mechanisms behind solid-state phase transformations and reactions is the key to optimizing desired functional properties of many technologically relevant materials. Recent advances in scanning transmission electron microscopy (STEM) allow the real-time visualization of solid-state transformations in materials, including those induced by an electron beam and temperature, with atomic resolution. However, despite the ever-expanding capabilities for high-resolution data acquisition, the inferred information about kinetics and thermodynamics of the process and single defect dynamics and interactions is minima, due to the inherent limitations of manual ex-situ analysis of the collected volumes of data. To circumvent this problem, we developed a deep learning framework for dynamic STEM imaging that is trained to find the structures (defects) that break a crystal lattice periodicity and apply it for map** solid state reactions and transformations in layered WS2 doped with Mo. This framework allows extracting thousands of lattice defects from raw STEM data (single images and movies) in a matter of seconds, which are then classified into different categories using unsupervised clustering methods. We further expanded our framework to extract parameters of diffusion for the sulfur vacancies and analyzed transition probabilities associated with switching between different configurations of defect complexes consisting of Mo dopant and sulfur vacancy, providing insight into point defect dynamics and reactions. This approach is universal and its application to beam induced reactions allows map** chemical transformation pathways in solids at the atomic level.
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Submitted 16 August, 2018; v1 submitted 14 March, 2018;
originally announced March 2018.
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Map** mesoscopic phase evolution during e-beam induced transformations via deep learning of atomically resolved images
Authors:
Rama K. Vasudevan,
Nouamane Laanait,
Erik M. Ferragut,
Kai Wang,
David B. Geohegan,
Kai Xiao,
Maxim A. Ziatdinov,
Stephen Jesse,
Ondrej E. Dyck,
Sergei V. Kalinin
Abstract:
Understanding transformations under electron beam irradiation requires map** the structural phases and their evolution in real time. To date, this has mostly been a manual endeavor comprising of difficult frame-by-frame analysis that is simultaneously tedious and prone to error. Here, we turn towards the use of deep convolutional neural networks (DCNN) to automatically determine the Bravais latt…
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Understanding transformations under electron beam irradiation requires map** the structural phases and their evolution in real time. To date, this has mostly been a manual endeavor comprising of difficult frame-by-frame analysis that is simultaneously tedious and prone to error. Here, we turn towards the use of deep convolutional neural networks (DCNN) to automatically determine the Bravais lattice symmetry present in atomically-resolved images. A DCNN is trained to identify the Bravais lattice class given a 2D fast Fourier transform of the input image. Monte-Carlo dropout is used for determining the prediction probability, and results are shown for both simulated and real atomically-resolved images from scanning tunneling microscopy and scanning transmission electron microscopy. A reduced representation of the final layer output allows to visualize the separation of classes in the DCNN and agrees with physical intuition. We then apply the trained network to electron beam-induced transformations in WS2, which allows tracking and determination of growth rate of voids. These results are novel in two ways: (1) It shows that DCNNs can be trained to recognize diffraction patterns, which is markedly different from the typical "real image" cases, and (2) it provides a method with in-built uncertainty quantification, allowing the real-time analysis of phases present in atomically resolved images.
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Submitted 28 February, 2018;
originally announced February 2018.
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Map** fast evolution of transient surface photovoltage dynamics using G-Mode Kelvin probe force microscopy
Authors:
Liam Collins,
Mahshid Ahmadi,
Jiajun Qin,
Olga S. Ovchinnikova,
Bin Hu,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Optoelectronic phenomena in materials such as organic/inorganic hybrid perovskites depend on a complex interplay between light induced carrier generation and fast (electronic) and slower (ionic) processes, all of which are known to be strongly affected by structural inhomogeneities such as interfaces and grain boundaries. Here, we develop a time resolved Kelvin probe force microscopy (KPFM) approa…
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Optoelectronic phenomena in materials such as organic/inorganic hybrid perovskites depend on a complex interplay between light induced carrier generation and fast (electronic) and slower (ionic) processes, all of which are known to be strongly affected by structural inhomogeneities such as interfaces and grain boundaries. Here, we develop a time resolved Kelvin probe force microscopy (KPFM) approach, based on the G-Mode SPM platform, allowing quantification of surface photovoltage (SPV) with microsecond temporal and nanoscale spatial resolution. We demonstrate the approach on methylammonium lead bromide (MAPbBr3) thin films and further highlight the usefulness of unsupervised clustering methods to quickly discern spatial variability in the information rich SPV dataset. Using this technique, we observe concurrent spatial and ultra-fast temporal variations in the SPV generated across the thin film, indicating that structure is likely responsible for the heterogenous behavior.
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Submitted 16 February, 2018;
originally announced February 2018.
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Deep Learning of Atomically Resolved Scanning Transmission Electron Microscopy Images: Chemical Identification and Tracking Local Transformations
Authors:
Maxim Ziatdinov,
Ondrej Dyck,
Artem Maksov,
Xufan Li,
Xiahan Sang,
Kai Xiao,
Raymond R. Unocic,
Rama Vasudevan,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Recent advances in scanning transmission electron and scanning probe microscopies have opened exciting opportunities in probing the materials structural parameters and various functional properties in real space with angstrom-level precision. This progress has been accompanied by an exponential increase in the size and quality of datasets produced by microscopic and spectroscopic experimental tech…
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Recent advances in scanning transmission electron and scanning probe microscopies have opened exciting opportunities in probing the materials structural parameters and various functional properties in real space with angstrom-level precision. This progress has been accompanied by an exponential increase in the size and quality of datasets produced by microscopic and spectroscopic experimental techniques. These developments necessitate adequate methods for extracting relevant physical and chemical information from the large datasets, for which a priori information on the structures of various atomic configurations and lattice defects is limited or absent. Here we demonstrate an application of deep neural networks to extract information from atomically resolved images including location of the atomic species and type of defects. We develop a 'weakly-supervised' approach that uses information on the coordinates of all atomic species in the image, extracted via a deep neural network, to identify a rich variety of defects that are not part of an initial training set. We further apply our approach to interpret complex atomic and defect transformation, including switching between different coordination of silicon dopants in graphene as a function of time, formation of peculiar silicon dimer with mixed 3-fold and 4-fold coordination, and the motion of molecular 'rotor'. This deep learning based approach resembles logic of a human operator, but can be scaled leading to significant shift in the way of extracting and analyzing information from raw experimental data.
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Submitted 17 January, 2018;
originally announced January 2018.
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Deep analytics of atomically-resolved images: manifest and latent features
Authors:
Maxim Ziatdinov,
Ondrej Dyck,
Artem Maksov,
Bethany M. Hudak,
Andrew R. Lupini,
Jiaming Song,
Paul C. Snijders,
Rama K. Vasudevan,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Recent advances in scanning transmission electron and scanning tunneling microscopies allow researchers to measure materials structural and electronic properties, such as atomic displacements and charge density modulations, at an Angstrom scale in real space. At the same time, the ability to quickly acquire large, high-resolution datasets has created a challenge for rapid physics-based analysis of…
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Recent advances in scanning transmission electron and scanning tunneling microscopies allow researchers to measure materials structural and electronic properties, such as atomic displacements and charge density modulations, at an Angstrom scale in real space. At the same time, the ability to quickly acquire large, high-resolution datasets has created a challenge for rapid physics-based analysis of images that typically contain several hundreds to several thousand atomic units. Here we demonstrate a universal deep-learning based framework for locating and characterizing atomic species in the lattice, which can be applied to different types of atomically resolved measurements on different materials. Specifically, by inspecting and categorizing features in the output layer of a convolutional neural network, we are able to detect structural and electronic 'anomalies' associated with the presence of point defects in a tungsten disulfide monolayer, non-uniformity of the charge density distribution around specific lattice sites on the surface of strongly correlated oxides, and transition between different structural states of buckybowl molecules. We further extended our method towards tracking, from one image frame to another, minute distortions in the geometric shape of individual Si dumbbells in a 3-dimensional Si sample, which are associated with a motion of lattice defects and impurities. Due the applicability of our framework to both scanning tunneling microscopy and scanning transmission electron microscopy measurements, it can provide a fast and straightforward way towards creating a unified database of defect-property relationships from experimental data for each material.
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Submitted 16 January, 2018;
originally announced January 2018.
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Direct Probing of Polarization Charges at the Nanoscale
Authors:
Owoong Kwon,
Daehee Seol,
Dongkyu Lee,
Hee Han,
Ionela Vrejoiu,
Woo Lee,
Stephen Jesse,
Ho Nyung Lee,
Sergei V. Kalinin,
Marin Alexe,
Yunseok Kim
Abstract:
Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has…
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Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long term development for reducing the sizes of devices, the preparation of ferroelectric materials and devices are entering nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it has been generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. However, the detection is unrelated to the radius of an AFM tip, and in fact, a matter of the switched area. In this work, we demonstrate the direct probing of the polarization charge at the nanoscale using the Positive-Up-Negative-Down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. We successfully probed the polarization charge densities of 73.7 and 119.0 uC/cm2 in ferroelectric nanocapacitors and thin films, respectively. The obtained results show the feasibility of the evaluation of the polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.
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Submitted 20 November, 2017;
originally announced November 2017.
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Direct atomic fabrication and dopant positioning in Si using electron beams with active real time image-based feedback
Authors:
Stephen Jesse,
Bethany M. Hudak,
Eva Zarkadoula,
Jiaming Song,
Artem Maksov,
Miguel Fuentes-Cabrera,
Panchapakesan Ganesh,
Ivan Kravchenko,
Paul C. Snijders,
Andrew R. Lupini,
Albina Borisevich,
Sergei V. Kalinin
Abstract:
Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's Law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as t…
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Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the Moore's Law roadmap still lacks tools capable of bulk semiconductor fabrication on sub-nanometer and atomic levels, with probe-based manipulation being explored as the only known pathway. Here we demonstrate that the atomic-sized focused beam of a scanning transmission electron microscope can be used to manipulate semiconductors such as Si on the atomic level, inducing growth of crystalline Si from the amorphous phase, reentrant amorphization, milling, and dopant-front motion. These phenomena are visualized in real time with atomic resolution. We further implement active feedback control based on real-time image analytics to control the e-beam motion, enabling shape control and providing a pathway for atom-by-atom correction of fabricated structures in the near future. These observations open a new epoch for atom-by-atom manufacturing in bulk, the long-held dream of nanotechnology.
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Submitted 15 November, 2017;
originally announced November 2017.
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E-beam manipulation of Si atoms on graphene edges with aberration-corrected STEM
Authors:
Ondrej Dyck,
Songkil Kim,
Sergei V. Kalinin,
Stephen Jesse
Abstract:
The burgeoning field of atomic level material control holds great promise for future breakthroughs in quantum and memristive device manufacture and fundamental studies of atomic-scale chemistry. Realization of atom-by atom control of matter represents a complex and ongoing challenge. Here, we explore the feasibility of controllable motion of dopant Si atoms at the edges of graphene via the sub-ato…
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The burgeoning field of atomic level material control holds great promise for future breakthroughs in quantum and memristive device manufacture and fundamental studies of atomic-scale chemistry. Realization of atom-by atom control of matter represents a complex and ongoing challenge. Here, we explore the feasibility of controllable motion of dopant Si atoms at the edges of graphene via the sub-atomically focused electron beam in a scanning transmission electron microscope (STEM). We demonstrate that the graphene edges can be cleaned of Si atoms and then subsequently replenished from nearby source material. It is also shown how Si edge atoms may be pushed from the edge of a small hole into the bulk of the graphene lattice and from the bulk of the lattice back to the edge. This is accomplished through sputtering of the edge of the graphene lattice to bury or uncover Si dopant atoms. These experiments form an initial step toward general atomic scale material control.
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Submitted 27 October, 2017;
originally announced October 2017.
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Assembling Di- and Multiatomic Si Clusters in Graphene via Electron Beam Manipulation
Authors:
Ondrej Dyck,
Songkil Kim,
Elisa Jimenez-Izal,
Anastassia N. Alexandrova,
Sergei V. Kalinin,
Stephen Jesse
Abstract:
We demonstrate assembly of di-, tri- and tetrameric Si clusters on the graphene surface using sub-atomically focused electron beam of a scanning transmission electron microscope. Here, an electron beam is used to introduce Si substitutional defects and defect clusters in graphene with spatial control of a few nanometers, and enable controlled motion of Si atoms. The Si substitutional defects are t…
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We demonstrate assembly of di-, tri- and tetrameric Si clusters on the graphene surface using sub-atomically focused electron beam of a scanning transmission electron microscope. Here, an electron beam is used to introduce Si substitutional defects and defect clusters in graphene with spatial control of a few nanometers, and enable controlled motion of Si atoms. The Si substitutional defects are then further manipulated to form dimers, trimers and more complex structures. The dynamics of a beam induced atomic scale chemical process is captured in a time-series of images at atomic resolution. These studies suggest that control of the e-beam induced local processes offers the next step toward atom-by-atom nanofabrication and provides an enabling tool for study of atomic scale chemistry in 2D materials.
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Submitted 22 May, 2018; v1 submitted 25 October, 2017;
originally announced October 2017.
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Mitigating E-beam-induced Hydrocarbon Deposition on Graphene for Atomic-Scale Scanning Transmission Electron Microscopy Studies
Authors:
Ondrej Dyck,
Songkil Kim,
Sergei V. Kalinin,
Stephen Jesse
Abstract:
CVD grown graphene used in (scanning) transmission electron microscopy ((S)TEM) studies must undergo a careful transfer of the one-atom-thick membrane from the growth surface (typically a Cu foil) to the TEM grid. During this transfer process, the graphene invariably becomes contaminated with foreign material. This contamination proves to be very problematic in the (S)TEM because often >95% of the…
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CVD grown graphene used in (scanning) transmission electron microscopy ((S)TEM) studies must undergo a careful transfer of the one-atom-thick membrane from the growth surface (typically a Cu foil) to the TEM grid. During this transfer process, the graphene invariably becomes contaminated with foreign material. This contamination proves to be very problematic in the (S)TEM because often >95% of the graphene is obscured and imaging of the pristine areas results in e-beam-induced hydrocarbon deposition which further acts to obscure the desired imaging area. In this article, we examine two cleaning techniques for CVD grown graphene that mitigate both aspects of the contamination problem: visible contamination covering the graphene, and invisible contamination that deposits onto the graphene under e-beam irradiation. The visible contamination may be removed quickly by a rapid thermal annealing to 1200 C in situ and the invisible e-beam-deposited contamination may be removed through an Ar/O2 annealing procedure prior to imaging in the (S)TEM.
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Submitted 1 September, 2017;
originally announced September 2017.