Showing 1–50 of 87 results for author: Jeong, Y

Dimensionality Engineering of Magnetic Anisotropy from Anomalous Hall Effect in Synthetic SrRuO3 Crystals

Authors: Seung Gyo Jeong, Seong Won Cho, Sehwan Song, ** Young Oh, Do Gyeom Jeong, Gyeongtak Han, Hu Young Jeong, Ahmed Yousef Mohamed, Woo-suk Noh, Sungkyun Park, Jong Seok Lee, Suyoun Lee, Young-Min Kim, Deok-Yong Cho, Woo Seok Choi

Abstract: Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designi… ▽ More Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1,500% improvement of coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Comments: 23 pages

Journal ref: published 2024

Characterization of a graphene-hBN superlattice field effect transistor

Authors: Won Beom Choi, Youngoh Son, Hangyeol Park, Yungi Jeong, Junhyeok Oh, K. Watanabe, T. Taniguchi, Joonho Jang

Abstract: Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor.… ▽ More Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures. △ Less

Submitted 12 July, 2024; v1 submitted 10 May, 2024; originally announced May 2024.

Inversion and Tunability of Van Hove Singularities in $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, and Cs) kagome metals

Authors: Sangjun Sim, Min Yong Jeong, Hyunggeun Lee, Dong Hyun David Lee, Myung Joon Han

Abstract: To understand the alkali-metal-dependent material properties of recently discovered $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, and Cs), we conducted a detailed electronic structure analysis based on first-principles density functional theory calculations. Contrary to the case of $A$ = K and Rb, the energetic positions of the low-lying Van Hove singularities are reversed in CsV$_{3}$Sb$_{5}$, and the charact… ▽ More To understand the alkali-metal-dependent material properties of recently discovered $A$V$_{3}$Sb$_{5}$ ($A$ = K, Rb, and Cs), we conducted a detailed electronic structure analysis based on first-principles density functional theory calculations. Contrary to the case of $A$ = K and Rb, the energetic positions of the low-lying Van Hove singularities are reversed in CsV$_{3}$Sb$_{5}$, and the characteristic higher-order Van Hove point gets closer to the Fermi level. We found that this notable difference can be attributed to the chemical effect, apart from structural differences. Due to their different orbital compositions, Van Hove points show qualitatively different responses to the structure changes. A previously unnoticed highest lying point can be lowered, locating close to or even below the other ones in response to a reasonable range of bi- and uni-axial strain. Our results can be useful in better understanding the material-dependent features reported in this family and in realizing experimental control of exotic quantum phases. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: Physical Chemistry Chemical Physics (PCCP) in press

Motile bacteria crossing liquid-liquid interfaces

Authors: Jiyong Cheon, Joowang Son, Sungbin Lim, Yundon Jeong, Jung-Hoon Park, Robert J. Mitchell, Jaeup U. Kim, Joonwoo Jeong

Abstract: Real-life bacteria often swim in complex fluids, but our understanding of the interactions between bacteria and complex surroundings is still evolving. In this work, rod-like \textit{Bacillus subtilis} swims in a quasi-2D environment with aqueous liquid-liquid interfaces, i.e., the isotropic-nematic coexistence phase of an aqueous chromonic liquid crystal. Focusing on the bacteria motion near and… ▽ More Real-life bacteria often swim in complex fluids, but our understanding of the interactions between bacteria and complex surroundings is still evolving. In this work, rod-like \textit{Bacillus subtilis} swims in a quasi-2D environment with aqueous liquid-liquid interfaces, i.e., the isotropic-nematic coexistence phase of an aqueous chromonic liquid crystal. Focusing on the bacteria motion near and at the liquid-liquid interfaces, we collect and quantify bacterial trajectories ranging across the isotropic to the nematic phase. Despite its small magnitude, the interfacial tension of the order of 10 $\mathrm{μN/m}$ at the isotropic-nematic interface justifies our observations that bacteria swimming more perpendicular to the interface have a higher probability of crossing the interface. Our force-balance model, considering the interfacial tension, further predicts how the length and speed of the bacteria affect their crossing behaviors. We also find, as soon as the bacteria cross the interface and enter the nematic phase, they wiggle less, but faster, and that this occurs as the flagellar bundles aggregate within the nematic phase. △ Less

Submitted 12 April, 2024; v1 submitted 7 February, 2024; originally announced February 2024.

Volcano Transition in a System of Generalized Kuramoto Oscillators with Random Frustrated Interactions

Authors: Seungjae Lee, Yeonsu Jeong, Seung-Woo Son, Katharina Krischer

Abstract: In a system of heterogeneous (Abelian) Kuramoto oscillators with random or `frustrated' interactions, transitions from states of incoherence to partial synchronization were observed. These so-called volcano transitions are characterized by a change in the shape of a local field distribution and were discussed in connection with an oscillator glass. In this paper, we consider a different class of o… ▽ More In a system of heterogeneous (Abelian) Kuramoto oscillators with random or `frustrated' interactions, transitions from states of incoherence to partial synchronization were observed. These so-called volcano transitions are characterized by a change in the shape of a local field distribution and were discussed in connection with an oscillator glass. In this paper, we consider a different class of oscillators, namely a system of (non-Abelian) SU(2)-Lohe oscillators that can also be defined on the 3-sphere, i.e., an oscillator is generalized to be defined as a unit vector in 4D Euclidean space. We demonstrate that such higher-dimensional Kuramoto models with reciprocal and nonreciprocal random interactions represented by a low-rank matrix exhibit a volcano transition as well. We determine the critical coupling strength at which a volcano-like transition occurs, employing an Ott-Antonsen ansatz. Numerical simulations provide additional validations of our analytical findings and reveal the differences in observable collective dynamics prior to and following the transition. Furthermore, we show that a system of unit 3-vector oscillators on the 2-sphere does not possess a volcano transition. △ Less

Submitted 17 January, 2024; originally announced January 2024.

A continuous-wave and pulsed X-band electron spin resonance spectrometer operating in ultra-high vacuum for the study of low dimensional spin ensembles

Authors: Franklin H. Cho, Juyoung Park, Soyoung Oh, Jisoo Yu, Ye** Jeong, Luciano Colazzo, Lukas Spree, Caroline Hommel, Arzhang Ardavan, Giovanni Boero, Fabio Donati

Abstract: We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and utilizes a half-wavelength microstrip line resonator realized using epitaxially grown copper films on single crystal Al$_2$O$_3$ substrates. The one-dimensional micro… ▽ More We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and utilizes a half-wavelength microstrip line resonator realized using epitaxially grown copper films on single crystal Al$_2$O$_3$ substrates. The one-dimensional microstrip line resonator exhibits a quality factor of more than 200 at room temperature, close to the upper limit determined by radiation losses. The surface characterizations of the copper strip of the resonator by atomic force microscope, low-energy electron diffraction, and scanning tunneling microscope show that the surface is atomically clean, flat, and single crystalline. Measuring the ESR spectrum at 15 K from a few nm thick molecular film of YPc$_2$, we find a continuous-wave ESR sensitivity of $2.6 \cdot 10^{11}~\text{spins}/\text{G} \cdot \text{Hz}^{1/2}$ indicating that a signal-to-noise ratio of $3.9~\text{G} \cdot \text{Hz}^{1/2}$ is expected from a monolayer of YPc$_2$ molecules. Advanced pulsed ESR experimental capabilities including dynamical decoupling and electron-nuclear double resonance are demonstrated using free radicals diluted in a glassy matrix. △ Less

Submitted 20 February, 2024; v1 submitted 1 December, 2023; originally announced December 2023.

Comments: 14 pages, 7 figures

Machine-learning-assisted analysis of transition metal dichalcogenide thin-film growth

Authors: Hyuk ** Kim, Minsu Chong, Tae Gyu Rhee, Yeong Gwang Khim, Min-Hyoung Jung, Young-Min Kim, Hu Young Jeong, Byoung Ki Choi, Young Jun Chang

Abstract: In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data al… ▽ More In situ reflective high-energy electron diffraction (RHEED) is widely used to monitor the surface crystalline state during thin-film growth by molecular beam epitaxy (MBE) and pulsed laser deposition. With the recent development of machine learning (ML), ML-assisted analysis of RHEED videos aids in interpreting the complete RHEED data of oxide thin films. The quantitative analysis of RHEED data allows us to characterize and categorize the growth modes step by step, and extract hidden knowledge of the epitaxial film growth process. In this study, we employed the ML-assisted RHEED analysis method to investigate the growth of 2D thin films of transition metal dichalcogenides (ReSe2) on graphene substrates by MBE. Principal component analysis (PCA) and K-means clustering were used to separate statistically important patterns and visualize the trend of pattern evolution without any notable loss of information. Using the modified PCA, we could monitor the diffraction intensity of solely the ReSe2 layers by filtering out the substrate contribution. These findings demonstrate that ML analysis can be successfully employed to examine and understand the film-growth dynamics of 2D materials. Further, the ML-based method can pave the way for the development of advanced real-time monitoring and autonomous material synthesis techniques. △ Less

Submitted 22 October, 2023; originally announced October 2023.

Comments: 21 pages, 4 figures

Journal ref: Nano Convergence 10, 10 (2023)

Interplay of valley, layer and band topology towards interacting quantum phases in bilayer graphene moire superlattice

Authors: Yungi Jeong, Hangyeol Park, Taeho Kim, K. Watanabe, T. Taniguchi, Jeil Jung, Joonho Jang

Abstract: A Bilayer of semiconducting 2D electronic systems has long been a versatile platform to study electronic correlation with tunable interlayer tunneling, Coulomb interactions and layer imbalance. In the natural graphite bilayer, Bernal-stacked bilayer graphene (BBG), the Landau level gives rise to an intimate connection between the valley and layer. Adding a moire superlattice potential enriches the… ▽ More A Bilayer of semiconducting 2D electronic systems has long been a versatile platform to study electronic correlation with tunable interlayer tunneling, Coulomb interactions and layer imbalance. In the natural graphite bilayer, Bernal-stacked bilayer graphene (BBG), the Landau level gives rise to an intimate connection between the valley and layer. Adding a moire superlattice potential enriches the BBG physics with the formation of topological minibands, potentially leading to tunable exotic quantum transports. Here, we present magnetotransport measurements of a high-quality bilayer graphene-hexagonal boron nitride (hBN) heterostructure. The zero-degree alignment generates a strong moire superlattice potential for the electrons in BBG and the resulting Landau fan diagram of longitudinal and Hall resistance displays a Hofstadter butterfly pattern with an unprecedented level of detail. We demonstrate that the intricate relationship between valley and layer degrees of freedom controls the topology of moire-induced bands, significantly influencing the energetics of interacting quantum phases in the BBG superlattice. We further observe signatures of field-induced correlated insulators and clear fractional quantizations of interaction driven topological quantum phases, such as fractional Chern insulators. Our results highlight the BBG/hBN heterostructure as an ideal platform for studying the delicate interplay between topology and electron correlation. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Authors: Jun Han Lee, Nguyen Xuan Duong, Min-Hyoung Jung, Hyun-Jae Lee, Ahyoung Kim, Youngki Yeo, Junhyung Kim, Gye-Hyeon Kim, Byeong-Gwan Cho, Jaegyu Kim, Furqan Ul Hassan Naqvi, Jong-Seong Bae, Jeehoon Kim, Chang Won Ahn, Young-Min Kim, Tae Kwon Song, Jae-Hyeon Ko, Tae-Yeong Koo, Changhee Sohn, Kibog Park, Chan-Ho Yang, Sang Mo Yang, Jun Hee Lee, Hu Young Jeong, Tae Heon Kim , et al. (1 additional authors not shown)

Abstract: Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroe… ▽ More Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defect-dipole tends to be considered the undesired to deteriorate the electronic functionality. Here, we report deterministic switching between the ferroelectric and the pinched states by exploiting a new substrate of cubic perovskite, BaZrO$_{3}$, which boosts square-tensile-strain to BaTiO$_{3}$ and promotes four-variants in-plane spontaneous polarization with oxygen vacancy creation. First-principles calculations propose a complex of an oxygen vacancy and two Ti$^{3+}$ ions coins a charge-neutral defect-dipole. Cooperative control of the defect-dipole and the spontaneous polarization reveals ternary in-plane polar states characterized by biased/pinched hysteresis loops. Furthermore, we experimentally demonstrate that three electrically controlled polar-ordering states lead to switchable and non-volatile dielectric states for application of non-destructive electro-dielectric memory. This discovery opens a new route to develop functional materials via manipulating defect-dipoles and offers a novel platform to advance heteroepitaxy beyond the prevalent perovskite substrates. △ Less

Submitted 12 September, 2022; originally announced September 2022.

Comments: According to the Copyright Policy, the submission version (before peer-review and revision)

Journal ref: Advanced Materials, 2205825 (2022)

Non-local Coulomb interaction and correlated electronic structure of TaS$_2$: A GW+EDMFT study

Authors: Taek Jung Kim, Min Yong Jeong, Myung Joon Han

Abstract: By means of $ab~initio$ computation schemes, we examine the low-energy electronic structure of monolayer TaS$_2$ in its low-temperature commensurate charge-density-wave structure. We estimate and take into account both local and non-local Coulomb correlations within cRPA (constrained random phase approximation) and GW+EDMFT (GW plus extended dynamical mean-field theory) method. Mott nature of its… ▽ More By means of $ab~initio$ computation schemes, we examine the low-energy electronic structure of monolayer TaS$_2$ in its low-temperature commensurate charge-density-wave structure. We estimate and take into account both local and non-local Coulomb correlations within cRPA (constrained random phase approximation) and GW+EDMFT (GW plus extended dynamical mean-field theory) method. Mott nature of its insulating phase is clearly identified. By increasing the level of nonlocal approximation from DMFT ($V=0$) to EDMFT and GW+EDMFT, a systematic change of charge screening effects is clearly observed while its quantitative effect on the electronic structure is small in the realistic Mott state. △ Less

Submitted 16 June, 2022; originally announced June 2022.

Comments: 17 pages, 4 figures

Discontinuous emergence of a giant cluster in assortative scale-free networks

Authors: Yeonsu Jeong, Soo Min Oh, Young Sul Cho

Abstract: A giant cluster emerges discontinuously in bond percolation in various networks when the growth of large clusters is globally suppressed. It was recently revealed that this phenomenon occurs even in a scale-free (SF) network, where hubs accelerate the growth of large clusters. The SF network used in the previous study was disassortative, though, so it is necessary to check whether the phenomenon a… ▽ More A giant cluster emerges discontinuously in bond percolation in various networks when the growth of large clusters is globally suppressed. It was recently revealed that this phenomenon occurs even in a scale-free (SF) network, where hubs accelerate the growth of large clusters. The SF network used in the previous study was disassortative, though, so it is necessary to check whether the phenomenon also occurs in an assortative SF network, where each hub prefers to be connected to another hub and thus the large cluster growth is accelerated. In this paper, we find that the phenomenon, namely the discontinuous emergence of a giant cluster in bond percolation with the global suppression of large clusters, also occurs in an assortative SF network. Interestingly, the generated network is also assortative but not a SF network at the transition point, unlike the disassortative SF network generated at the transition point in the previous study. We observe similar behaviors in two additional models and discuss the results. △ Less

Submitted 8 January, 2023; v1 submitted 23 May, 2022; originally announced May 2022.

Comments: 6 pages, 5 figures

Journal ref: J. Korean Phys. Soc. 81, 608 (2022)

Strain engineering and the hidden role of magnetism in monolayer VTe$_2$

Authors: Do Hoon Kiem, Min Yong Jeong, Hongkee Yoon, Myung Joon Han

Abstract: Two-dimensional transition metal dichalcogenides have attracted great attention recently. Motivated by a recent study of crystalline bulk VTe$_2$, we theoretically investigated the spin-charge-lattice interplay in monolayer VTe$_2$. To understand the controversial experimental reports on several different charge density wave ground states, we paid special attention to the 'hidden' role of antiferr… ▽ More Two-dimensional transition metal dichalcogenides have attracted great attention recently. Motivated by a recent study of crystalline bulk VTe$_2$, we theoretically investigated the spin-charge-lattice interplay in monolayer VTe$_2$. To understand the controversial experimental reports on several different charge density wave ground states, we paid special attention to the 'hidden' role of antiferromagnetism as its direct experimental detection may be challenging. Our first-principles calculations show that the 4$\times$1 charge density wave and the corresponding lattice deformation are accompanied by the 'double-stripe' antiferromagnetic spin order in its ground state. This phase has not only the lowest total energy but also the dynamical phonon stability, which supports a group of previous experiments. Interestingly enough, this ground state is stabilized only by assuming the underlying spin order. By noticing this intriguing and previously unknown interplay between magnetism and other degrees of freedom, we further suggest a possible strain engineering. By applying tensile strain, monolayer VTe$_2$ exhibits phase transition first to a different charge density wave phase and then eventually to a ferromagnetically ordered one. △ Less

Submitted 22 June, 2022; v1 submitted 29 March, 2022; originally announced March 2022.

Comments: Accepted in Nanoscale

Crucial role of out-of-plane Sb-$p$ orbitals in Van Hove singularity formation and electronic correlation for superconducting Kagome metal CsV$_3$Sb$_5$

Authors: Min Yong Jeong, Hyeok-Jun Yang, Hee Seung Kim, Yong Baek Kim, SungBin Lee, Myung Joon Han

Abstract: First-principles density functional theory calculations are performed to understand the electronic structure and interaction parameters for recently discovered superconducting Kagome metal CsV$_3$Sb$_5$. A systematic analysis of the tight-binding parameters based on maximally localized Wannier function method demonstrates that the out-of-plane Sb$^{\rm out}$-$p$ orbital is a key element in complet… ▽ More First-principles density functional theory calculations are performed to understand the electronic structure and interaction parameters for recently discovered superconducting Kagome metal CsV$_3$Sb$_5$. A systematic analysis of the tight-binding parameters based on maximally localized Wannier function method demonstrates that the out-of-plane Sb$^{\rm out}$-$p$ orbital is a key element in complete description of the three Van Hove singularity structures known in this material at $M$ point near the Fermi level. Further, the correlation strengths are also largely determined by Sb$^{\rm out}$-$p$ states. Based on constrained random phase approximation, we find that on-site and inter-site interaction parameter are both significantly affected by the screening effect of Sb$^{\rm out}$-$p$ orbitals. As the role of this previously unnoticed orbital state can be tuned or controlled by out-of-plane lattice parameters, we examine the electronic structure and particularly the evolution of Van Hove singularity points as a function of strain and pressure, which can serve as useful knobs to control the material properties. △ Less

Submitted 17 March, 2022; originally announced March 2022.

Comments: 9 pages, 3 figures

Intertwining orbital current order and superconductivity in Kagome metal

Authors: Hyeok-Jun Yang, Hee Seung Kim, Min Yong Jeong, Yong Baek Kim, Myung Joon Han, SungBin Lee

Abstract: The nature of superconductivity in newly discovered Kagome materials, $\text{AV}_3\text{Sb}_5$ (A=K, Rb, Cs), has been a subject of intense debate. Recent experiments suggest the presence of orbital current order on top of the charge density wave (CDW) and superconductivity. Since the orbital current order breaks time-reversal symmetry, it may fundamentally affect possible superconducting states.… ▽ More The nature of superconductivity in newly discovered Kagome materials, $\text{AV}_3\text{Sb}_5$ (A=K, Rb, Cs), has been a subject of intense debate. Recent experiments suggest the presence of orbital current order on top of the charge density wave (CDW) and superconductivity. Since the orbital current order breaks time-reversal symmetry, it may fundamentally affect possible superconducting states. In this work, we investigate the mutual influence between the orbital current order and superconductivity in Kagome metal with characteristic van Hove singularity (vHS). By explicitly deriving the Landau-Ginzburg theory, we classify possible orbital current order and superconductivity. It turns out that distinct unconventional superconductivities are expected, depending on the orbital current ordering types. Thus, this information can be used to infer the superconducting order parameter when the orbital current order is identified and vice versa. We also discuss possible experiments that may distinguish such superconducting states coexisting with the orbital current order. △ Less

Submitted 14 September, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Comments: 22 pages, 8 figures

Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures

Authors: Seung Gyo Jeong, Jiwoong Kim, Ambrose Seo, Sungkyun Park, Hu Young Jeong, Young-Min Kim, Valeria Lauter, Takeshi Egam, Jung Hoon Han, Woo Seok Choi

Abstract: Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) he… ▽ More Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon-spin coupling is further confirmed by phonon Zeeman effects. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach open a window to unveil the crucial roles of chiral phonons in magnetic materials. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 40 pages

Journal ref: published in 2022

Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors

Authors: Marc-Antoine Stoeckel, Yoann Olivier, Marco Gobbi, Dmytro Dudenko, Vincent Lemaur, Mohamed Zbiri, Anne A. Y. Guilbert, Gabriele D'Avino, Fabiola Liscio, Andrea Migliori, Luca Ortolani, Nicola Demitri, Xin **, Young-Gyun Jeong, Andrea Liscio, Marco-Vittorio Nardi, Luca Pasquali, Luca Razzari, David Beljonne, Paolo Samori, Emanuele Orgiu

Abstract: Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals… ▽ More Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e. related to the interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be external, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both internal and external disorder to ultimately reach band-like electron transport. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Comments: arXiv admin note: text overlap with arXiv:1909.05344

Journal ref: Adv. Mater. 33 (2021) 2007870

Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus

Authors: Yang** Lee, Han-gyu Kim, Tae Keun Yun, Jong Chan Kim, Sol Lee, Sung ** Yang, Myeong** Jang, Donggyu Kim, Huije Ryu, Gwan-Hyoung Lee, Seongil Im, Hu Young Jeong, Hyoung Joon Choi, Kwanpyo Kim

Abstract: The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses the puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale pictur… ▽ More The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses the puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale picture of BP's interface toward metallic contact has remained elusive. Here we examine the interfacial structures and properties of physically-deposited metals of various kinds on BP. We find that Au, Ag, and Bi form single-crystalline films with (110) orientation through guided van der Waals epitaxy. Transmission electron microscopy and X-ray photoelectron spectroscopy confirm that atomically sharp van der Waals metal-BP interfaces forms with exceptional rotational alignment. Under a weak metal-BP interaction regime, the BP's puckered structure play an essential role in the adatom assembly process and can lead to the formation of a single crystal, which is supported by our theoretical analysis and calculations. The experimental survey also demonstrates that the BP-metal junctions can exhibit various types of interfacial structures depending on metals, such as the formation of polycrystalline microstructure or metal phosphides. This study provides a guideline for obtaining a realistic view on metal-2D semiconductor interfacial structures, especially for atomically puckered 2D crystals. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Comments: 27 pages, 5 figures

Journal ref: Chemistry of Materials, 2021

Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics

Authors: In Hak Lee, Byoung Ki Choi, Hyuk ** Kim, Min Jay Kim, Hu Young Jeong, Jong Hoon Lee, Seung-Young Park, Younghun Jo, Chanki Lee, Jun Woo Choi, Seong Won Cho, Suyuon Lee, Younghak Kim, Beom Hyun Kim, Kyeong Jun Lee, ** Eun Heo, Seo Hyoung Chang, Feng** Li, Bheema Lingam Chittari, Jeil Jung, Young Jun Chang

Abstract: Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}… ▽ More Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for develo** room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds. △ Less

Submitted 5 April, 2021; originally announced April 2021.

Comments: 30 pages, 6 figures, accepted in ACS Applied Nano Materials

Study of Yu-Shiba-Rusinov bound states by tuning the electron density at the Fermi energy

Authors: Sang Yong Song, Yoon Sung Park, Yongchan Jeong, Min-Seok Kim, Ki-Seok Kim, Jungpil Seo

Abstract: Magnetic atoms can break the Cooper pairs of superconductors, leading to the formation of Yu-Shiba-Rusinov (YSR) bound states inside superconducting gaps. Theory predicts that the YSR bound states can be controlled by tuning the electron density at the Fermi energy, but it has not been studied deeply. In this work, we studied the nature of YSR bound states in response to the potential scattering U… ▽ More Magnetic atoms can break the Cooper pairs of superconductors, leading to the formation of Yu-Shiba-Rusinov (YSR) bound states inside superconducting gaps. Theory predicts that the YSR bound states can be controlled by tuning the electron density at the Fermi energy, but it has not been studied deeply. In this work, we studied the nature of YSR bound states in response to the potential scattering U by tuning the electron density at the Fermi energy. By comparing two systems, Mn-phthalocyanine molecules on Pb(111) and Co atoms on PbSe/Pb(111), we demonstrate that the sign of U can be unambiguously determined by varying the electron density at the Fermi energy. We also show that U competes with the exchange interaction JS in the formation of YSR bound states. Our work provides insights into the interactions between magnetic atoms and superconductors at a fundamental level. △ Less

Submitted 20 October, 2020; originally announced October 2020.

Comments: 28 pages including supplemental material

Epitaxial single-crystal growth of transition metal dichalcogenide monolayers via atomic sawtooth Au surface

Authors: Soo Ho Choi, Hyung-** Kim, Bumsub Song, Yong In Kim, Gyeongtak Han, Hayoung Ko, Stephen Boandoh, Ji Hoon Choi, Chang Seok Oh, Jeong Won **, Seok Joon Yun, Bong Gyu Shin, Hu Young Jeong, Young-Min Kim, Young-Kyu Han, Young Hee Lee, Soo Min Kim, Ki Kang Kim

Abstract: Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report th… ▽ More Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report the SC growth of TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as a universal growth template. Atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission-electron-microscopy. Anisotropic adsorption energy of TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of Miller indices. Growth using atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2, WSe2, MoS2, MoSe2/WSe2 heterostructure, and W1-xMoxS2 alloy. Our strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures in a wafer scale, to further facilitate the applications of TMdCs in post silicon technology. △ Less

Submitted 20 October, 2020; originally announced October 2020.

Comments: The supporting information is included in the manuscript file

Novel $J_{\rm{eff}}$=3/2 Metallic Phase and Unconventional Superconductivity in GaTa$_4$Se$_8$

Authors: Min Yong Jeong, Seo Hyoung Chang, Hyeong Jun Lee, Jae-Hoon Sim, Kyeong Jun Lee, Etienne Janod, Laurent Cario, Ayman Said, Wenli Bi, Philipp Werner, Ara Go, Jungho Kim, Myung Joon Han

Abstract: By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic… ▽ More By means of density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations and resonant inelastic x-ray scattering (RIXS) experiments, we investigate the high-pressure phases of the spin-orbit-coupled $J_{\rm{eff}}=3/2$ insulator GaTa$_4$Se$_8$. Its metallic phase, derived from the Mott state by applying pressure, is found to carry $J_{\rm{eff}}=3/2$ moments. The characteristic excitation peak in the RIXS spectrum maintains its destructive quantum interference of $J_{\rm{eff}}$ at the Ta $L_2$-edge up to 10.4 GPa. Our exact diagonalization based DFT+DMFT calculations including spin-orbit coupling also reveal that the $J_{\rm{eff}}=3/2$ character can be clearly identified under high pressure. These results establish the intriguing nature of the correlated metallic magnetic phase, which represents the first confirmed example of $J_{\rm{eff}}$=3/2 moments residing in a metal. They also indicate that the pressure-induced superconductivity is likely unconventional and influenced by these $J_{\rm{eff}}=3/2$ moments. Based on a self-energy analysis, we furthermore propose the possibility of do**-induced superconductivity related to a spin-freezing crossover. △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 7 pages, 5 figures (additional 4 pages and 6 figures for supplemental materials)

Journal ref: Phys. Rev. B 103, 081112 (2021)

Frequency-tunable nano-oscillator based on Ovonic Threshold Switch (OTS)

Authors: Seon Jeong Kim, Seong Won Cho, Hye** Lee, Jaesang Lee, Tae Yeon Seong, Inho Kim, Jong-Keuk Park, Joon Young Kwak, Jaewook Kim, Jongkil Park, YeonJoo Jeong, Gyu Weon Hwang, Kyeong Seok Lee, Suyoun Lee

Abstract: Nano-oscillator devices are gaining more and more attention as a prerequisite for develo** novel energy-efficient computing systems based on coupled oscillators. Here, we introduce a highly scalable, frequency-tunable nano-oscillator consisting of one Ovonic threshold switch (OTS) and a field-effect transistor (FET). It is presented that the proposed device shows an oscillating behavior with a n… ▽ More Nano-oscillator devices are gaining more and more attention as a prerequisite for develo** novel energy-efficient computing systems based on coupled oscillators. Here, we introduce a highly scalable, frequency-tunable nano-oscillator consisting of one Ovonic threshold switch (OTS) and a field-effect transistor (FET). It is presented that the proposed device shows an oscillating behavior with a natural frequency (f_{nat}) adjustable from 0.5 to 2 MHz depending on the gate voltage applied to the FET. In addition, under a small periodic input, it is observed that the oscillating frequency (f_{osc}) of the device is locked to the frequency (f_{in}) of the input when f_{in} ~ f_{nat}, demonstrating the so-called synchronization phenomenon. It also shows the phase lock of the combined oscillator network using circuit simulation, where the phase relation between the oscillators can be controlled by the coupling strength. These results imply that the proposed device is promising for applications in oscillator-based computing systems. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Comments: 18 pages including 5 figures

A weak topological insulator state in quasi-one-dimensional superconductor TaSe$_3$

Authors: Jounghoon Hyun, Min Yong Jeong, Sunghun Kim, Myung-Chul Jung, Yeonghoon Lee, Chan-young Lim, Jaehun Cha, Gyubin Lee, Yeo** An, Makoto Hashimoto, Donghui Lu, Jonathan D. Denlinger, Myung Joon Han, Yeongkwan Kim

Abstract: A well-established way to find novel Majorana particles in a solid-state system is to have superconductivity arising from the topological electronic structure. To this end, the heterostructure systems that consist of normal superconductor and topological material have been actively explored in the past decade. However, a search for the single material system that simultaneously exhibits intrinsic… ▽ More A well-established way to find novel Majorana particles in a solid-state system is to have superconductivity arising from the topological electronic structure. To this end, the heterostructure systems that consist of normal superconductor and topological material have been actively explored in the past decade. However, a search for the single material system that simultaneously exhibits intrinsic superconductivity and topological phase has been largely limited, although such a system is far more favorable especially for the quantum device applications. Here, we report the electronic structure study of a quasi-one-dimensional (q1D) superconductor TaSe$_3$. Our results of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculation clearly show that TaSe$_3$ is a topological superconductor. The characteristic bulk inversion gap, in-gap state and its shape of non-Dirac dispersion concurrently point to the topologically nontrivial nature of this material. The further investigations of the Z$_2$ indices and the topologically distinctive surface band crossings disclose that it belongs to the weak topological insulator (WTI) class. Hereby, TaSe$_3$ becomes the first verified example of an intrinsic 1D topological superconductor. It hopefully provides a promising platform for future applications utilizing Majorana bound states localized at the end of 1D intrinsic topological superconductors. △ Less

Submitted 13 September, 2020; originally announced September 2020.

Highly ordered lead-free double perovskite halides by design

Authors: Chang Won Ahn, Jae Hun Jo, Jong Chan Kim, Hamid Ullah, Sangkyun Ryu, Younghun Hwang, ** San Choi, Jongmin Lee, Sanghan Lee, Hyoungjeen Jeen, Young-Han Shin, Hu Young Jeong, Ill Won Kim, Tae Heon Kim

Abstract: Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to no… ▽ More Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity. △ Less

Submitted 29 June, 2020; originally announced June 2020.

Propagation control of octahedral tilt in SrRuO3 via artificial heterostructuring

Authors: Seung Gyo Jeong, Gyeongtak Han, Sehwan Song, Taewon Min, Ahmed Yousef Mohamed, Sungkyun Park, Jaekwang Lee, Hu Young Jeong, Young-Min Kim, Deok-Yong Cho, Woo Seok Choi

Abstract: Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilting of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications su… ▽ More Bonding geometry engineering of metal-oxygen octahedra is a facile way of tailoring various functional properties of transition metal oxides. Several approaches, including epitaxial strain, thickness, and stoichiometry control, have been proposed to efficiently tune the rotation and tilting of the octahedra, but these approaches are inevitably accompanied by unnecessary structural modifications such as changes in thin-film lattice parameters. In this study, we propose a method to selectively engineer the octahedral bonding geometries, while maintaining other parameters that might implicitly influence the functional properties. A concept of octahedral tilt propagation engineering has been developed using atomically designed SrRuO3/SrTiO3 superlattices. In particular, the propagation of RuO6 octahedral tilting within the SrRuO3 layers having identical thicknesses was systematically controlled by varying the thickness of adjacent SrTiO3 layers. This led to a substantial modification in the electromagnetic properties of the SrRuO3 layer, significantly enhancing the magnetic moment of Ru. Our approach provides a method to selectively manipulate the bonding geometry of strongly correlated oxides, thereby enabling a better understanding and greater controllability of their functional properties. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Comments: 27 pages, 4 figures, 6 supplementary figures

Journal ref: published in 2020

Pressure Induced Topological Superconductivity in the Spin-Orbit Mott Insulator GaTa4Se8

Authors: Moon Jip Park, GiBaik Sim, Min Yong Jeong, Archana Mishra, Myung Joon Han, SungBin Lee

Abstract: Lacunar spinel GaTa$_4$Se$_8$ is a unique example of spin-orbit coupled Mott insulator described by molecular $j_{\text{eff}}\!=\!3/2$ states. It becomes superconducting at T$_c$=5.8K under pressure without do**. In this work, we show, this pressure-induced superconductivity is a realization of a new type topological phase characterized by spin-2 Cooper pairs. Starting from first-principles dens… ▽ More Lacunar spinel GaTa$_4$Se$_8$ is a unique example of spin-orbit coupled Mott insulator described by molecular $j_{\text{eff}}\!=\!3/2$ states. It becomes superconducting at T$_c$=5.8K under pressure without do**. In this work, we show, this pressure-induced superconductivity is a realization of a new type topological phase characterized by spin-2 Cooper pairs. Starting from first-principles density functional calculations and random phase approximation, we construct the microscopic model and perform the detailed analysis. Applying pressure is found to trigger the virtual interband tunneling processes assisted by strong Hund coupling, thereby stabilizing a particular $d$-wave quintet channel. Furthermore, we show that its Bogoliubov quasiparticles and their surface states exhibit novel topological nature. To verify our theory, we propose unique experimental signatures that can be measured by Josephson junction transport and scanning tunneling microscope. Our findings open up new directions searching for exotic superconductivity in spin-orbit coupled materials. △ Less

Submitted 8 June, 2020; originally announced June 2020.

Comments: 5+11 pages, accepted in npj Quantum Materials

Lattice dynamics and spin-phonon interaction in strained NiO films

Authors: Alireza Kashir, Veronica Goian, Daseob Yoon, Byeong-Gwan Cho, Yoon Hee Jeong, Gil-Ho Lee, Stanislav Kamba

Abstract: NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of… ▽ More NiO thin films with various strains were grown on SrTiO3 (STO) and MgO substrates using a pulsed laser deposition technique. The films were characterized using an x-ray diffractometer, atomic force microscopy, and infrared reflectance spectroscopy. The films grown on STO (001) substrate show a compressive in-plane strain which increases as the film thickness is reduced, resulting in an increase of the NiO phonon frequency. On the other hand, a tensile strain was detected in the NiO film grown on MgO (001) substrate which induces a softening of the phonon frequency. Overall, the variation of in-plane strain from -0.36% to +0.48% yields the decrease of the phonon frequency from 409.6 cm-1 to 377.5 cm-1 which occurs due to the ~1% change of the inter-atomic distances. The magnetic exchange -driven phonon splitting Delta(W) in three different sample, with relaxed (i.e. zero) strain, 0.36% compressive and 0.48% tensile strain was measured as a function of temperature. The Delta(W) increases on cooling in NiO relaxed film as in the previously published work on a bulk crystal. The splitting increases on cooling also in 0.48% tensile strained film, but Delta(W) is systematically 3-4 cm-1 smaller than in relaxed film. Since the phonon splitting is proportional to the non-dominant magnetic exchange interaction J1, the reduction of phonon splitting in tensile-strained film was explained by a diminishing J1 with lattice expansion. Increase of Delta(W) on cooling can be also explained by rising of J1 with reduced temperature. △ Less

Submitted 19 February, 2020; originally announced February 2020.

Numerical Computation of Spin-Transfer Torques for Antiferromagnetic Domain walls

Authors: Hyeon-Jong Park, Yunboo Jeong, Se-Hyeok Oh, Gyungchoon Go, Jung Hyun Oh, Kyoung-Whan Kim, Hyun-Woo Lee, Kyung-** Lee

Abstract: We numerically compute current-induced spin-transfer torques for antiferromagnetic domain walls, based on a linear response theory in a tight-binding model. We find that, unlike for ferromagnetic domain wall motion, the contribution of adiabatic spin torque to antiferromagnetic domain wall motion is negligible, consistent with previous theories. As a result, the non-adiabatic spin-transfer torque… ▽ More We numerically compute current-induced spin-transfer torques for antiferromagnetic domain walls, based on a linear response theory in a tight-binding model. We find that, unlike for ferromagnetic domain wall motion, the contribution of adiabatic spin torque to antiferromagnetic domain wall motion is negligible, consistent with previous theories. As a result, the non-adiabatic spin-transfer torque is a main driving torque for antiferromagnetic domain wall motion. Moreover, the non-adiabatic spin-transfer torque for narrower antiferromagnetic domain walls increases more rapidly than that for ferromagnetic domain walls, which is attributed to the enhanced spin mistracking process for antiferromagnetic domain walls. △ Less

Submitted 21 January, 2020; v1 submitted 21 January, 2020; originally announced January 2020.

Comments: 19 pages, 4 figures

Journal ref: Phys. Rev. B 101, 144431 (2020)

Fabrication and Imaging of Monolayer Phosphorene with Preferred Edge Configurations via Graphene-Assisted Layer-by-Layer Thinning

Authors: Yang** Lee, Sol Lee, Jun-Yoeong Yoon, **woo Cheon, Hu Young Jeong, Kwanpyo Kim

Abstract: Phosphorene, a monolayer of black phosphorus (BP), is an elemental two-dimensional material with interesting physical properties, such as high charge carrier mobility and exotic anisotropic in-plane properties. To fundamentally understand these various physical properties, it is critically important to conduct an atomic-scale structural investigation of phosphorene, particularly regarding various… ▽ More Phosphorene, a monolayer of black phosphorus (BP), is an elemental two-dimensional material with interesting physical properties, such as high charge carrier mobility and exotic anisotropic in-plane properties. To fundamentally understand these various physical properties, it is critically important to conduct an atomic-scale structural investigation of phosphorene, particularly regarding various defects and preferred edge configurations. However, it has been challenging to investigate mono- and few-layer phosphorene because of technical difficulties arising in the preparation of a high-quality sample and damages induced during the characterization process. Here, we successfully fabricate high-quality monolayer phosphorene using a controlled thinning process with transmission electron microscopy, and subsequently perform atomic-resolution imaging. Graphene protection suppresses the e-beam-induced damage to multi-layer BP and one-side graphene protection facilitates the layer-by-layer thinning of the samples, rendering high-quality monolayer and bilayer regions. We also observe the formation of atomic-scale crystalline edges predominantly aligned along the zigzag and (101) terminations, which is originated from edge kinetics under e-beam-induced sputtering process. Our study demonstrates a new method to image and precisely manipulate the thickness and edge configurations of air-sensitive two-dimensional materials. △ Less

Submitted 3 December, 2019; originally announced December 2019.

Comments: 21 pages, 5 figures

Journal ref: Nano Letters 2019

Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal

Authors: Seung Gyo Jeong, Taewon Min, Sungmin Woo, Jiwoong Kim, Yu-Qiao Zhang, Seong Won Cho, Jaeseok Son, Young-Min Kim, Jung Hoon Han, Sungkyun Park, Hu Young Jeong, Hiromichi Ohta, Suyoun Lee, Tae Won Noh, Jaekwang Lee, Woo Seok Choi

Abstract: Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled an… ▽ More Artificial crystals synthesized by atomic-scale epitaxy provides the ability to control the dimensions of the quantum phases and associated phase transitions via precise thickness modulation. In particular, reduction in dimensionality via quantized control of atomic layers is a powerful approach to revealing hidden electronic and magnetic phases. Here, we demonstrate a dimensionality-controlled and induced metal-insulator transition (MIT) in atomically designed superlattices by synthesizing a genuine two dimensional (2D) SrRuO3 crystal with highly suppressed charge transfer. The tendency to ferromagnetically align the spins in SrRuO3 layer diminishes in 2D as the interlayer exchange interaction vanishes, accompanying the 2D localization of electrons. Furthermore, electronic and magnetic instabilities in the two SrRuO3 unit cell layers induce a thermally-driven MIT along with a metamagnetic transition. △ Less

Submitted 24 November, 2019; originally announced November 2019.

Comments: 31 pages, 3 figures, 13 supplementary figures

Journal ref: published in 2020

Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Authors: Tae Young Jeong, Hakseong Kim, Sang-Jun Choi, Kenji Watanabe, Takashi Taniguchi, Ki Ju Yee, Yong-Sung Kim, Suyong Jung

Abstract: Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is the primary task to expedite multi disciplinary efforts in the promotion of next generation electrical and optical device applications utilizing these low dimensional materials. Here, with electron tunneling and optical sp… ▽ More Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is the primary task to expedite multi disciplinary efforts in the promotion of next generation electrical and optical device applications utilizing these low dimensional materials. Here, with electron tunneling and optical spectroscopy measurements with density functional theory, we spectroscopically locate the midgap states from chalcogen atom vacancies in four representative monolayer SC TMDs (MoS2, WS2, MoSe2, WSe2), and carefully analyze the similarities and dissimilarities of the atomic defects in four distinctive materials regarding the physical origins of the missing chalcogen atoms and the implications to SC mTMD properties. In addition, we address both quasiparticle and optical energy gaps of the SC mTMD films and find out many body interactions significantly enlarge the quasiparticle energy gaps and excitonic binding energies, when the semiconducting monolayers are encapsulated by non interacting hexagonal boron nitride layers. △ Less

Submitted 30 October, 2019; originally announced October 2019.

Journal ref: Nat. Commun. 10, 3825 (2019)

Induced magnetic two-dimensionality by hole do** in the superconducting infinite-layer nickelate Nd$_{1-x}$Sr$_x$NiO$_2$

Authors: Siheon Ryee, Hongkee Yoon, Taek Jung Kim, Min Yong Jeong, Myung Joon Han

Abstract: To understand the superconductivity recently discovered in Nd$_{0.8}$Sr$_{0.2}$NiO$_2$, we carried out LDA+DMFT (local density approximation plus dynamical mean-field theory) and magnetic force response calculations. The on-site correlation in Ni-$3d$ orbitals causes notable changes in the electronic structure. The calculated temperature-dependent susceptibility exhibits the Curie-Weiss behavior,… ▽ More To understand the superconductivity recently discovered in Nd$_{0.8}$Sr$_{0.2}$NiO$_2$, we carried out LDA+DMFT (local density approximation plus dynamical mean-field theory) and magnetic force response calculations. The on-site correlation in Ni-$3d$ orbitals causes notable changes in the electronic structure. The calculated temperature-dependent susceptibility exhibits the Curie-Weiss behavior, indicating the localized character of its moment. From the low-frequency behavior of self-energy, we conclude that the undoped phase of this nickelate is Fermi-liquid-like contrary to cuprates. Interestingly, the estimated correlation strength by means of the inverse of quasiparticle weight is found to increase and then decrease as a function of hole concentration, forming a dome-like shape. Another finding is that magnetic interactions in this material become two-dimensional by hole do**. While the undoped NdNiO$_2$ has the sizable out-of-plane interaction, hole do**s strongly suppress it. This two-dimensionality is maximized at the hole concentration $δ\approx0.25$. Further analysis as well as the implications of our findings are presented. △ Less

Submitted 24 February, 2020; v1 submitted 12 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 064513 (2020)

Freeing electrons from extrinsic and intrinsic disorder yields band-like transport in n-type organic semiconductors

Authors: Marc-Antoine Stoeckel, Yoann Olivier, Marco Gobbi, Dmytro Dudenko, Vincent Lemaur, Mohamed Zbiri, Anne Y. Guilbert, Gabriele DAvino, Fabiola Liscio, Nicola Demitri, Xin **, Young-Gyun Jeong, Marco Vittorio Nardi, Luca Pasquali, Luca Razzari, David Beljonne, Paolo Samori, Emanuele Orgiu

Abstract: Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge c… ▽ More Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both intrinsic and extrinsic, especially for n-type materials. Intrinsic dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (< a-few-hundred cm-1), which renders it difficult to assess them experimentally. Hitherto, this has prevented the identification of clear molecular design rules to control and reduce dynamic disorder. In addition, the disorder can also be extrinsic, being controlled by the gate insulator dielectric properties. Here we report on a comprehensive study of charge transport in two closely related n-type molecular organic semiconductors using a combination of temperature-dependent inelastic neutron scattering and photoelectron spectroscopy corroborated by electrical measurements, theory and simulations. We provide unambiguous evidence that ad hoc molecular design enables to free the electron charge carriers from both intrinsic and extrinsic disorder to ultimately reach band-like electron transport. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer

Authors: Hoon Hahn Yoon, Wonho Song, Sungchul Jung, Junhyung Kim, Kyuhyung Mo, Gahyun Choi, Hu Young Jeong, Jong Hoon Lee, Kibog Park

Abstract: It is demonstrated that the electric dipole layer due to the overlap** of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the lo… ▽ More It is demonstrated that the electric dipole layer due to the overlap** of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the region of GaAs surface with low interface-trap density in metal/graphene/n-GaAs(001) junction. The graphene interlayer takes a role of diffusion barrier preventing the atomic intermixing at interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the Schottky barrier decreasing as metal work-function increasing. Our work shows that the graphene interlayer can invert the effective work-function of metal between $high$ and $low$, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly $high$ work-function) metal electrodes on a semiconductor substrate possessing low surface-state density. △ Less

Submitted 14 July, 2019; originally announced July 2019.

Comments: 19 pages, 10 figures

Journal ref: ACS Applied Materials & Interfaces 11(50), 47182 (2019)

Spin-phonon interaction increased by compressive strain in antiferromagnetic MnO thin films

Authors: Alireza Kashir, Veronica Goian, Oliva Pacherova, Yoon Hee Jeong, Gil-Ho Lee, Stanislav Kamba

Abstract: MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases… ▽ More MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases with the strain, and splits below Néel temperature TN due to the magnetic-exchange interaction. Films grown on (110)-oriented MgO substrates exhibit a huge phonon splitting already at room temperature due to the anisotropic in-plane compressive strain. Below TN, additional phonon is activated in the IR spectra; this trend is evidence for a spin-order-induced structural phase transition from tetragonal to monoclinic phase. Total phonon splitting is 55 cm-1 in (110)-oriented MnO film, which is more than twice the value in bulk MnO. This result is evidence that the nearest neighbor exchange interaction, which is responsible for the magnetically driven phonon splitting, is greatly increased in compressively strained films. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Strain-induced increase of dielectric constant in EuO thin film

Authors: Alireza Kashir, Hyeon-Woo Jeong, Woochan Jung, Yoon Hee Jeong, Gil-Ho Lee

Abstract: Recently, lattice dynamics of the highly strained europium monoxide, as a promising candidate for strong ferroelectric-ferromagnet material, applied in the next-generation storage devices, attracted huge attention in the solid-state electronics. Here, the authors investigate the effect of tensile strain on dielectric properties of pulsed laser deposited EuO thin films from 10 to 200 K. A nearly 3%… ▽ More Recently, lattice dynamics of the highly strained europium monoxide, as a promising candidate for strong ferroelectric-ferromagnet material, applied in the next-generation storage devices, attracted huge attention in the solid-state electronics. Here, the authors investigate the effect of tensile strain on dielectric properties of pulsed laser deposited EuO thin films from 10 to 200 K. A nearly 3% out-of-plane lattice compression is observed as the film thickness was reduced to 8 nm, which could originate from the lattice mismatch between film and a LaAlO3 substrate. The temperature and frequency dependence of capacitance and loss factor of the films reveals the dominant role of electronic and ionic polarization below 100 K. The interdigitated capacitor fabricated on strained film shows almost 50% increase of capacitance compared to the relaxed one, which corresponds to a considerable increase of dielectric constant induced by in-plane tensile strain. Softening of the in-plane polarized transverse phonon modes of EuO lattice due to tensile strain might have the major contribution to this behaviour according to the Lyddane-Sachs-Teller relation. △ Less

Submitted 30 August, 2019; v1 submitted 27 May, 2019; originally announced May 2019.

Journal ref: 2019 Mater. Res. Express 6 106321

Dielectric properties of strained NiO thin films

Authors: Alireza Kashir, Hyeon-Woo Jeong, Gil-ho Lee, Pavlo Mikheenko, Yoon Hee Jeong

Abstract: The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to ro… ▽ More The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin film can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides. △ Less

Submitted 29 April, 2019; v1 submitted 16 April, 2019; originally announced April 2019.

Journal ref: J. Korean Phys. Soc. (2019) 74: 984

Increases of a Diamagnetic Property by Flux-Pinning in Volume Defect-Dominating Superconductors

Authors: H. B. Lee, G. C. Kim, Y. C. Kim, R. K. Ko, D. Y. Jeong

Abstract: Whereas there are two critical fields that are H$_{c1}$ and H$_{c2}$ in the ideal type II superconductor, there is another critical field H$_{c1}'$ defined as the field showing the maximum diamagnetic property in the real type II superconductor. We would present that H$_{c1}'$ is able to be proved theoretically and experimentally. We have derived an equation based on flux-pinning effect of volume… ▽ More Whereas there are two critical fields that are H$_{c1}$ and H$_{c2}$ in the ideal type II superconductor, there is another critical field H$_{c1}'$ defined as the field showing the maximum diamagnetic property in the real type II superconductor. We would present that H$_{c1}'$ is able to be proved theoretically and experimentally. We have derived an equation based on flux-pinning effect of volume defects. MgB$_2$ bulks which were synthesized by Mg and B are similar to this model. The number of quantum fluxes pinned at a defect of radius r, a pinning penetration depth, magnetic flux penetration method, and a magnetization at H$_{c1}'$ in the static state are suggested through the equation of the model. It was speculated that pinned fluxes at a volume defect in the superconductor have to be pick-out depinned from the defect and move an inside of the superconductor when pick-out forces of pinned fluxes is larger than pinning force of the defect (F$_{pickout}$ $>$ F$_{pinning}$) or when the shortest distance between pinned fluxes at a volume defect is the same as that of H$_{c2}$. In reality, $Δ$G$_{dynamic}$ which is sum of fluxes movement energy and fluxes vibration energy is involved in movement of pinned fluxes. When volume defects are small and many, the number of pinned fluxes at a volume defect calculated by experimental results was closer to that of ideally calculated ones because of a small $Δ$G$_{dynamic}$. However, when volume defects are large and a few, the number of pinned fluxes at a volume defect calculated by experimental results were much fewer than that of ideally calculated ones because of a large $Δ$G$_{dynamic}$. △ Less

Submitted 5 November, 2020; v1 submitted 12 April, 2019; originally announced April 2019.

Comments: 15 pages 6 figures

On the origin and the manipulation of ferromagnetism in Fe$_3$GeTe$_2$: defects and do**s

Authors: Seung Woo Jang, Min Yong Jeong, Hongkee Yoon, Siheon Ryee, Myung Joon Han

Abstract: To understand the magnetic properties of Fe$_3$GeTe$_2$, we performed the detailed first-principles study. Contrary to the conventional wisdom, it is unambiguously shown that Fe$_3$GeTe$_2$ is not ferromagnetic but antiferromagnetic carrying zero net moment in its stoichiometric phase. Fe defect and hole do** are the keys to make this material ferromagnetic, which are shown by the magnetic force… ▽ More To understand the magnetic properties of Fe$_3$GeTe$_2$, we performed the detailed first-principles study. Contrary to the conventional wisdom, it is unambiguously shown that Fe$_3$GeTe$_2$ is not ferromagnetic but antiferromagnetic carrying zero net moment in its stoichiometric phase. Fe defect and hole do** are the keys to make this material ferromagnetic, which are shown by the magnetic force response as well as the total energy calculation with the explicit Fe defects and the varied system charges. Further, we found that the electron do** also induces the antiferro- to ferromagnetic transition. It is a crucial factor to understand the notable recent experiment of gate-controlled ferromagnetism. Our results not only unveil the origin of ferromagnetism of this material but also show how it can be manipulated with defect and do**. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Comments: 12 pages, 3 figures

Pulsed Laser Deposition of Rocksalt Magnetic Binary Oxides

Authors: Alireza Kashir, Hyeon-Woo Jeong, Gil-ho Lee, Pavlo Mikheenko, Yoon Hee Jeong

Abstract: Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At… ▽ More Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 °C. MnO thin films that had long-range ordered were successfully deposited on the MgO substrates after appropriate tuning of deposition parameters. The growth of MnO phase was strongly influenced by substrate temperature and laser fluence. EuO films with satisfactory quality were deposited by PLD after oxygen availability had been minimized. Synthesis of EuO thin films at rather low growth temperature prevented thermally-driven lattice relaxation and allowed growth of strained films. Overall, PLD was a quick and reliable method to grow binary oxides with rocksalt structure in high quality that can satisfy requirements for applications and for basic research. △ Less

Submitted 19 September, 2019; v1 submitted 3 April, 2019; originally announced April 2019.

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Authors: Gwangwoo Kim, Sung-Soo Kim, Jonghyuk Jeon, Seong In Yoon, Seokmo Hong, Young ** Cho, Abhishek Misra, Servet Ozdemir, Jun Yin, Davit Ghazaryan, Mathew Holwill, Artem Mishchenko, Daria V. Andreeva, Yong-** Kim, Hu Young Jeong, A-Rang Jang, Hyun-Jong Chung, Andre K. Geim, Kostya S. Novoselov, Byeong-Hyeok Sohn, Hyeon Suk Shin

Abstract: Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical… ▽ More Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices. △ Less

Submitted 16 January, 2019; originally announced January 2019.

Journal ref: Nature Communications, Volume 10, Article number 230 (2019)

Charge density functional plus $U$ calculation of lacunar spinel GaM$_4$Se$_8$ (M = Nb, Mo, Ta, and W)

Authors: Hyunggeun Lee, Min Yong Jeong, Jae-Hoon Sim, Hongkee Yoon, Siheon Ryee, Myung Joon Han

Abstract: Charge density functional plus $U$ calculations are carried out to examine the validity of molecular $J_\text{eff}$=1/2 and 3/2 state in lacunar spinel GaM$_4$X$_8$ (M = Nb, Mo, Ta, and W). With LDA (spin-unpolarized local density approximation)$+U$, which has recently been suggested as the more desirable choice than LSDA (local spin density approximation)$+U$, we examine the band structure in com… ▽ More Charge density functional plus $U$ calculations are carried out to examine the validity of molecular $J_\text{eff}$=1/2 and 3/2 state in lacunar spinel GaM$_4$X$_8$ (M = Nb, Mo, Ta, and W). With LDA (spin-unpolarized local density approximation)$+U$, which has recently been suggested as the more desirable choice than LSDA (local spin density approximation)$+U$, we examine the band structure in comparison with the previous prediction based on the spin-polarized version of functional and with the prototypical $J_\text{eff}$=1/2 material Sr$_2$IrO$_4$. It is found that the previously suggested $J_\text{eff}$=1/2 and 3/2 band characters remain valid still in LDA$+U$ calculations while the use of charge-only density causes some minor differences. Our result provides the further support for the novel molecular $J_\text{eff}$ state in this series of materials, which can hopefully motivate the future exploration toward its verification and the further search for new functionalities. △ Less

Submitted 3 January, 2019; originally announced January 2019.

Anomalous behavior of the quasi-one-dimensional quantum material Na$_{2}$OsO$_{4}$ at high pressure

Authors: Raimundas Sereika, Kazunari Yamaura, Yating Jia, Sijia Zhang, Changqing **, Hongkee Yoon, Min Yong Jeong, Myung Joon Han, Dale L. Brewe, Steve M. Heald, Stanislav Sinogeikin, Yang Ding, Ho-kwang Mao

Abstract: Na$_{2}$OsO$_{4}$ is an unusual quantum material that, in contrast to the common 5${d}^{2}$ oxides with spins = 1, owns a magnetically silent ground state with spin = 0 and a band gap at Fermi level attributed to a distortion in the OsO$_{6}$ octahedral sites. In this semiconductor, our low-temperature electrical transport measurements indicate an anomaly at 6.3 K with a power-law behavior inclini… ▽ More Na$_{2}$OsO$_{4}$ is an unusual quantum material that, in contrast to the common 5${d}^{2}$ oxides with spins = 1, owns a magnetically silent ground state with spin = 0 and a band gap at Fermi level attributed to a distortion in the OsO$_{6}$ octahedral sites. In this semiconductor, our low-temperature electrical transport measurements indicate an anomaly at 6.3 K with a power-law behavior inclining through the semiconductor-to-metal transition observed at 23 GPa. Even more peculiarly, we discover that before this transition, the material becomes more insulating instead of merely turning into a metal according to the conventional wisdom. To investigate the underlying mechanisms, we applied experimental and theoretical methods to examine the electronic and crystal structures comprehensively, and conclude that the enhanced insulating state at high pressure originates from the enlarged distortion of the OsO$_{6}$. It is such a distortion that widens the band gap and decreases the electron occupancy in Os's ${t}_{2g}$ orbital through an interplay of the lattice, charge, and orbital in the material, which is responsible for the changes observed in our experiments. △ Less

Submitted 20 February, 2019; v1 submitted 15 December, 2018; originally announced December 2018.

Comments: Manuscript with supplementary data, 24 pages

Journal ref: Materials Today Physics 8, 18 - 24 (2019)

Soliton fractional charge of disordered graphene nanoribbon

Authors: Y. H. Jeong, S. -R. Eric Yang, M. -C. Cha

Abstract: We investigate the properties of the gap-edge states of half-filled interacting disordered zigzag graphene nanoribbons. We find that the midgap states can display the quantized fractional charge of 1/2. These gap-edge states can be represented by topological kinks with their site probability distribution divided between the opposite zigzag edges with different chiralities. In addition, there are n… ▽ More We investigate the properties of the gap-edge states of half-filled interacting disordered zigzag graphene nanoribbons. We find that the midgap states can display the quantized fractional charge of 1/2. These gap-edge states can be represented by topological kinks with their site probability distribution divided between the opposite zigzag edges with different chiralities. In addition, there are numerous spin-split gap-edge states, similar to those in a Mott-Anderson insulator. △ Less

Submitted 24 April, 2019; v1 submitted 6 December, 2018; originally announced December 2018.

Comments: 11 pages, 19 figures; J. Phys.: Condens. Matter 31 (2019) 265601; estimate of quantum charge fluctuations is included; more references are added

Journal ref: J. Phys.: Condens. Matter 31 265601 (2019)

Long spin coherence length and bulk-like spin-orbit torque in ferrimagnetic multilayers

Authors: Jiawei Yu, Do Bang, Rahul Mishra, Rajagopalan Ramaswamy, Jung Hyun Oh, Hyeon-Jong Park, Yunboo Jeong, Pham Van Thach, Dong-Kyu Lee, Gyungchoon Go, Seo-Won Lee, Yi Wang, Shuyuan Shi, Xuepeng Qiu, Hiroyuki Awano, Kyung-** Lee, Hyunsoo Yang

Abstract: Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current for a smaller cell while kee** the thermal stability of magnetic cells for non-volatility. As the cell size reduces, however, it becomes extremely difficult to… ▽ More Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current for a smaller cell while kee** the thermal stability of magnetic cells for non-volatility. As the cell size reduces, however, it becomes extremely difficult to meet this requirement with ferromagnets because spin-transfer torque for ferromagnets is a surface torque due to rapid spin dephasing, leading to the 1/ferromagnet-thickness dependence of the spin-torque efficiency. Requirement of a larger switching current for a thicker and thus more thermally stable ferromagnetic cell is the fundamental obstacle for high-density non-volatile applications with ferromagnets. Theories predicted that antiferromagnets have a long spin coherence length due to the staggered spin order on an atomic scale, thereby resolving the above fundamental limitation. Despite several spin-torque experiments on antiferromagnets and ferrimagnetic alloys, this prediction has remained unexplored. Here we report a long spin coherence length and associated bulk-like-torque characteristic in an antiferromagnetically coupled ferrimagnetic multilayer. We find that a transverse spin current can pass through > 10 nm-thick ferrimagnetic Co/Tb multilayers whereas it is entirely absorbed by 1 nm-thick ferromagnetic Co/Ni multilayer. We also find that the switching efficiency of Co/Tb multilayers partially reflects a bulk-like-torque characteristic as it increases with the ferrimagnet-thickness up to 8 nm and then decreases, in clear contrast to 1/thickness-dependence of Co/Ni multilayers. Our results on antiferromagnetically coupled systems will invigorate researches towards energy-efficient spintronic technologies. △ Less

Submitted 24 October, 2018; originally announced October 2018.

Microscopic understanding of magnetic interactions in bilayer CrI$_3$

Authors: Seung Woo Jang, Min Yong Jeong, Hongkee Yoon, Siheon Ryee, Myung Joon Han

Abstract: We performed the detailed microscopic analysis of the inter-layer magnetic couplings for bilayer CrI$_3$. As the first step toward understanding the recent experimental observations and utilizing them for device applications, we estimated magnetic force response as well as total energy. Various van der Waals functionals equivocally point to the ferromagnetic ground state for the low-temperature st… ▽ More We performed the detailed microscopic analysis of the inter-layer magnetic couplings for bilayer CrI$_3$. As the first step toward understanding the recent experimental observations and utilizing them for device applications, we estimated magnetic force response as well as total energy. Various van der Waals functionals equivocally point to the ferromagnetic ground state for the low-temperature structured bilayer CrI$_3$ which is further confirmed independently by magnetic force response calculations. The calculated orbital-dependent magnetic forces clearly show that $e_g$-$t_{2g}$ interaction is the key to stabilize this ferromagnetic order. By suppressing this ferromagnetic interaction and enhancing antiferromagnetic orbital channels of $e_g$-$e_g$ and $t_{2g}$-$t_{2g}$, one can realize the desirable antiferromagnetic order. We showed that high-temperature monoclinic stacking can be the case. Our results provide unique information and insight to understand the magnetism of multi-layer CrI$_3$ paving the way to utilize it for applications. △ Less

Submitted 9 April, 2019; v1 submitted 5 September, 2018; originally announced September 2018.

Comments: 15 pages, 3 figures, one-column

Journal ref: Phys. Rev. Materials 3, 031001 (2019)

Coulomb drag transistor via graphene/MoS2 heterostructures

Authors: Youngjo **, Min-Kyu Joo, Byoung Hee Moon, Hyun Kim, Sanghyup Lee, Hye Yun Jeong, Hyo Yeol Kwak, Young Hee Lee

Abstract: Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag int… ▽ More Two-dimensional (2D) heterointerfaces often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, double-layer graphene separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag the carriers in the passive layer. Here, we propose a new switching device operating via Coulomb drag interaction at a graphene/MoS2 (GM) heterointerface. The ideal van der Waals distance allows strong coupling of the interlayer electron-hole pairs, whose recombination is prevented by the Schottky barrier formed due to charge transfer at the heterointerface. This device exhibits a high carrier mobility (up to ~3,700 cm^2V^-1s^-1) even at room temperature, while maintaining a high on/off current ratio (~10^8), outperforming those of individual layers. In the electron-electron drag regime, graphene-like Shubnikov-de Haas oscillations are observed at low temperatures. Our Coulomb drag transistor could provide a shortcut for the practical application of quantum-mechanical 2D heterostructures at room temperature. △ Less

Submitted 31 October, 2017; originally announced October 2017.

Comments: 14 pages, 4 figures

Gap states and edge properties of rectangular graphene quantum dot in staggered potential

Authors: Y. H. Jeong, S. -R. Eric Yang

Abstract: We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag edge. We find that, although the bulk states outside the energy gap are nearly unaffected, spin degeneracy of each gap state is lifted by the staggered potential.… ▽ More We investigate edge properties of a gapful rectangular graphene quantum dot in a staggered potential. In such a system gap states with discrete and closely spaced energy levels exist that are spatially located on the left or right zigzag edge. We find that, although the bulk states outside the energy gap are nearly unaffected, spin degeneracy of each gap state is lifted by the staggered potential. We have computed the occupation numbers of spin-up and -down gap states at various values of the strength of the staggered potential. The electronic and magnetic properties of the zigzag edges depend sensitively on these numbers. We discuss the possibility of applying this system as a single electron spintronic device. △ Less

Submitted 27 September, 2017; originally announced September 2017.

Journal ref: Journal of the Korean Physical Society,71, 283 (2017)

Topological end states and Zak phase of rectangular armchair ribbon

Authors: Y. H. Jeong, S. -R. Eric Yang

Abstract: We consider the end states of a half-filled rectangular armchair graphene ribbon (RAGR) in a staggered potential. Taking electron-electron interactions into account we find that, as the strength of the staggered potential varies, three types of couplings between the end states can occur: antiferromagnetic without or with spin splitting, and paramagnetic without spin-splitting. We find that a spin-… ▽ More We consider the end states of a half-filled rectangular armchair graphene ribbon (RAGR) in a staggered potential. Taking electron-electron interactions into account we find that, as the strength of the staggered potential varies, three types of couplings between the end states can occur: antiferromagnetic without or with spin splitting, and paramagnetic without spin-splitting. We find that a spin-splitting is present only in the staggered potential region $0<Δ<Δ_c$. The transition from the antiferromagnetic state at $Δ=0$ to the paramagnetic state goes through an intermediate spin-split antiferromagnetic state, and this spin-splitting disappears suddenly at $Δ_c$. For small and large values of $Δ$ the end charge of a RAGR can be connected to the Zak phase of the periodic armchair graphene ribbon (PARG) with the same width, and it varies continuously as the strength of the potential changes. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Journal ref: Annals of Physics 385, (2017) pp. 688-694

Direct experimental observation of the molecular Jeff=3/2 ground state in the lacunar spinel GaTa4Se8

Authors: Min Yong Jeong, Seo Hyoung Chang, Beom Hyun Kim, Jae-Hoon Sim, Ayman Said, Diego Casa, Thomas Gog, Etienne Janod, Laurent Cario, Seiji Yunoki, Myung Joon Han, Jungho Kim

Abstract: Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretic… ▽ More Strong spin-orbit coupling lifts the degeneracy of t2g orbitals in 5d transition-metal systems, leaving a Kramers doublet and quartet with effective angular momentum of Jeff = 1/2 and 3/2, respectively. These spin-orbit entangled states can host exotic quantum phases such as topological Mott state, unconventional superconductivity, and quantum spin liquid. The lacunar spinel GaTa4Se8 was theoretically predicted to form the molecular Jeff = 3/2 ground state. Experimental verification of its existence is an important first step to exploring the consequences of the Jeff = 3/2 state. Here, we report direct experimental evidence of the Jeff = 3/2 state in GaTa4Se8 by means of excitation spectra of resonant inelastic x-rays scattering at the Ta L3 and L2 edges. We found that the excitations involving the Jeff = 1/2 molecular orbital were suppressed only at the Ta L2 edge, manifesting the realization of the molecular Jeff = 3/2 ground state in GaTa4Se8. △ Less

Submitted 20 October, 2017; v1 submitted 4 August, 2017; originally announced August 2017.

Comments: 25 pages, 5 figures + Supplementary Materials [10 pages, 5 figures]

Journal ref: Nature Communications 8, Article number: 782 (2017)