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Cerium Oxide-based Solid-State Thermal Transistors with Wide Switching Width of 9.5 W/mK
Authors:
Ahrong Jeong,
Mitsuki Yoshimura,
Zhi** Bian,
Jason Tam,
Bin Feng,
Yuichi Ikuhara,
Yusaku Magari,
Takashi Endo,
Yasutaka Matsuo,
Hiromichi Ohta
Abstract:
Thermal transistors that electrically switch heat flow on and off have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}) of active metal oxide layers. The \k{appa}-switching width (difference between on-state and off-state \k{appa}) of the previously proposed electrochemical thermal transistors is narrow, less than 5…
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Thermal transistors that electrically switch heat flow on and off have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}) of active metal oxide layers. The \k{appa}-switching width (difference between on-state and off-state \k{appa}) of the previously proposed electrochemical thermal transistors is narrow, less than 5 W/mK. Here, we show solid-state electrochemical thermal transistors with a wide \k{appa}-switching width of 9.5 W/mK. We used CeO2 thin film as the active layer directly deposited on a solid electrolyte YSZ substrate. A Pt thin film was deposited on the surface of the CeO2 thin film and the back surface of the YSZ substrate to create a solid-state electrochemical thermal transistor. When the CeO2 thin film was once reduced (off-state) and then oxidized (on-state), the \k{appa} was approximately 2.5 W/mK in its most reduced state, and \k{appa} increased with oxidation to 11.8 W/mK (on-state). This reduction (off-state)/oxidation (on-state) cycle was repeated five times and the average value of \k{appa} was 2.5 W/mK after reduction (off-state) and 12 W/mK after oxidation (on-state). The \k{appa}-switching width was 9.5 W/mK. The CeO2-based solid-state electrochemical thermal transistors are potential materials for thermal shutters and thermal displays.
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Submitted 30 April, 2024;
originally announced April 2024.
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Colloidal dispersions of sterically and electrostatically stabilized PbS quantum dots: the effect of stabilization mechanism on structure factors, second virial coefficients, and film-forming properties
Authors:
Ahhyun Jeong,
Josh Portner,
Christian P. N. Tanner,
Justin C. Ondry,
Chenkun Zhou,
Zehan Mi,
Youssef A. Tazoui,
Vivian R. K. Wall,
Naomi S. Ginsberg,
Dmitri V. Talapin
Abstract:
Electrostatically stabilized nanocrystals (NCs) and, in particular, quantum dots (QDs) hold promise for forming strongly coupled superlattices due to their compact and electronically conductive surface ligands. However, studies on the colloidal dispersion and interparticle interactions of electrostatically stabilized sub-10 nm NCs have been limited, hindering the optimization of colloidal stabilit…
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Electrostatically stabilized nanocrystals (NCs) and, in particular, quantum dots (QDs) hold promise for forming strongly coupled superlattices due to their compact and electronically conductive surface ligands. However, studies on the colloidal dispersion and interparticle interactions of electrostatically stabilized sub-10 nm NCs have been limited, hindering the optimization of colloidal stability and self-assembly. In this study, we employed small-angle X ray scattering (SAXS) experiments to investigate the interparticle interactions and arrangement of PbS QDs with thiostannate ligands (PbS-Sn2S64-) in polar solvents. The study reveals significant deviations from ideal solution behavior in electrostatically stabilized QD dispersions. Our results demonstrate that PbS-Sn2S64- QDs exhibit long-range interactions within the solvent, in contrast to the short-range steric repulsion characteristic of PbS QDs with oleate ligands (PbS-OA). Introducing highly charged multivalent electrolytes screens electrostatic interactions between charged QDs, reducing the length scale of the repulsive interactions. Furthermore, we calculate the second virial (B2) coefficients from SAXS data, providing insights into how surface chemistry, solvent, and size influence pair potentials. Finally, we explore the influence of long-range interparticle interactions of PbS-Sn2S64- QDs on the morphology of films produced by drying or spin-coating colloidal solutions. The long-range repulsive term of PbS-Sn2S64- QDs promotes the formation of amorphous films, and screening the electrostatic repulsion by addition of an electrolyte enables the formation of a crystalline film. These findings highlight the critical role of NC-NC interactions in tailoring the properties of functional nanomaterials.
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Submitted 29 April, 2024;
originally announced April 2024.
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Suppressed self-diffusion of nanoscale constituents of a complex liquid
Authors:
Christian P. N. Tanner,
Vivian R. K. Wall,
Mumtaz Gababa,
Joshua Portner,
Ahhyun Jeong,
Matthew J. Hurley,
Nicholas Leonard,
Jonathan G. Raybin,
James K. Utterback,
Ahyoung Kim,
Andrei Fluerasu,
Yanwen Sun,
Johannes Moeller,
Alexey Zozulya,
Wonhyuk Jo,
Anders Madsen,
Dmitri V. Talapin,
Samuel W. Teitelbaum,
Naomi S. Ginsberg
Abstract:
The ability to understand and ultimately control the transformations and properties of various nanoscale systems, from proteins to synthetic nanomaterial assemblies, hinges on the ability to directly elucidate their dynamics on their characteristic length and time scales. Here, we use MHz X-ray photon correlation spectroscopy (XPCS) to directly elucidate the characteristic microsecond-dynamics of…
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The ability to understand and ultimately control the transformations and properties of various nanoscale systems, from proteins to synthetic nanomaterial assemblies, hinges on the ability to directly elucidate their dynamics on their characteristic length and time scales. Here, we use MHz X-ray photon correlation spectroscopy (XPCS) to directly elucidate the characteristic microsecond-dynamics of density fluctuations of semiconductor nanocrystals (NCs), not only in a colloidal dispersion but also in a liquid phase consisting of densely packed, yet mobile, NCs with no long-range order. By carefully disentangling X-ray induced effects, we find the wavevector-dependent fluctuation rates in the liquid phase are suppressed relative to those in the colloidal phase and to those in experiments and hydrodynamic theories of densely packed repulsive particles. We show that the suppressed rates are due to a substantial decrease in the self-diffusion of NCs in the liquid phase, which we attribute to explicit attractive interactions. Via comparison with simulations, we find that the extracted strength of the attractions explains the stability of the liquid phase, in contrast to the gelation observed via XPCS in many other charged colloidal systems. This work opens the door to elucidating fast, condensed phase dynamics in a variety of complex fluids and other nanoscale soft matter systems, such as densely packed proteins and non-equilibrium self-assembly processes.
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Submitted 26 April, 2024;
originally announced April 2024.
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Enhancing nanocrystal superlattice self-assembly near a metastable liquid binodal
Authors:
Christian P. N. Tanner,
Vivian R. K. Wall,
Joshua Portner,
Ahhyun Jeong,
Avishek Das,
James K. Utterback,
Leo M. Hamerlynck,
Jonathan G. Raybin,
Matthew J. Hurley,
Nicholas Leonard,
Rebecca B. Wai,
Jenna A. Tan,
Mumtaz Gababa,
Chenhui Zhu,
Eric Schaible,
Christopher J. Tassone,
David T. Limmer,
Samuel W. Teitelbaum,
Dmitri V. Talapin,
Naomi S. Ginsberg
Abstract:
Bottom-up assembly of nanocrystals (NCs) into ordered arrays, or superlattices (SLs), is a promising route to design materials with new functionalities, but the degree of control over assembly into functional structures remains challenging. Using electrostatics, rather than density, to tune the interactions between semiconductor NCs, we watch self-assembly proceeding through a metastable liquid ph…
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Bottom-up assembly of nanocrystals (NCs) into ordered arrays, or superlattices (SLs), is a promising route to design materials with new functionalities, but the degree of control over assembly into functional structures remains challenging. Using electrostatics, rather than density, to tune the interactions between semiconductor NCs, we watch self-assembly proceeding through a metastable liquid phase. We systematically investigate the phase behavior as a function of quench conditions in situ and in real time using small angle X-ray scattering (SAXS). Through quantitative fitting to colloid, liquid, and SL models, we extract the time evolution of each phase and the system phase diagram, which we find to be consistent with short-range attractive interactions. Using the phase diagram's predictive power, we establish control of the self-assembly rate over three orders of magnitude, and identify one- and two-step self-assembly regimes, with only the latter implicating the metastable liquid as an intermediate. Importantly, the presence of the metastable liquid increases SL formation rates relative to the equivalent one-step pathway, and SL order counterintuitively increases with the rate, revealing a highly desirable and generalizable kinetic strategy to promote and enhance ordered assembly.
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Submitted 25 April, 2024;
originally announced April 2024.
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Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths
Authors:
Zhi** Bian,
Mitsuki Yoshimura,
Ahrong Jeong,
Haobo Li,
Takashi Endo,
Yasutaka Matsuo,
Yusaku Magari,
Hidekazu Tanaka,
Hiromichi Ohta
Abstract:
Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching.…
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Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching. However, the \k{appa} switching width is still small (< 4 W/mK). In this study, we demonstrate that LaNiOx-based solid-state electrochemical thermal transistors have a \k{appa} switching width of 4.3 W/mK. Fully oxidised LaNiO3 (on state) has a \k{appa} of 6.0 W/mK due to the large contribution of electron thermal conductivity (\k{appa}ele, 3.1 W/mK). In contrast, reduced LaNiO2.72 (off state) has a \k{appa} of 1.7 W/mK because the phonons are scattered by the oxygen vacancies. The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of \k{appa} and the crystalline lattice of LaNiOx. This electrochemical thermal transistor may be a promising platform for next-generation devices such as thermal displays.
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Submitted 12 April, 2024;
originally announced April 2024.
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On-Stack Two-Dimensional Conversion of MoS2 into MoO3
Authors:
Taeg Yeoung Ko,
Areum Jeong,
Wontaek Kim,
**hwan Lee,
Youngchan Kim,
Jung Eun Lee,
Gyeong Hee Ryu,
Kwanghee Park,
Dogyeong Kim,
Zonghoon Lee,
Min Hyung Lee,
Changgu Lee,
Sunmin Ryu
Abstract:
Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbat…
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Chemical transformation of existing two-dimensional (2D) materials can be crucial in further expanding the 2D crystal palette required to realize various functional heterostructures. In this work, we demonstrate a 2D 'on-stack' chemical conversion of single-layer crystalline MoS2 into MoO3 with a precise layer control that enables truly 2D MoO3 and MoO3/MoS2 heterostructures. To minimize perturbation of the 2D morphology, a nonthermal oxidation using O2 plasma was employed. The early stage of the reaction was characterized by a defect-induced Raman peak, drastic quenching of photoluminescence (PL) signals and sub-nm protrusions in atomic force microscopy images. As the reaction proceeded from the uppermost layer to the buried layers, PL and optical second harmonic generation signals showed characteristic modulations revealing a layer-by-layer conversion. The plasma-generated 2D oxides, confirmed as MoO3 by x-ray photoelectron spectroscopy, were found to be amorphous but extremely flat with a surface roughness of 0.18 nm, comparable to that of 1L MoS2. The rate of oxidation quantified by Raman spectroscopy decreased very rapidly for buried sulfide layers due to protection by the surface 2D oxides, exhibiting a pseudo-self-limiting behavior. As exemplified in this work, various on-stack chemical transformations can be applied to other 2D materials in forming otherwise unobtainable materials and complex heterostructures, thus expanding the palette of 2D material building blocks.
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Submitted 10 August, 2020;
originally announced August 2020.