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Unconventional Magnetic Oscillations in Kagome Mott Insulators
Authors:
Guoxin Zheng,
Yuan Zhu,
Kuan-Wen Chen,
Byungmin Kang,
Dechen Zhang,
Kaila Jenkins,
Aaron Chan,
Zhenyuan Zeng,
Aini Xu,
Oscar A. Valenzuela,
Joanna Blawat,
John Singleton,
Patrick A. Lee,
Shiliang Li,
Lu Li
Abstract:
We apply a strong magnetic field to a kagome Mott insulator with antiferromagnetic interactions which does not show magnetic ordering down to low temperatures. We observe a plateau at magnetization 1/9 Bohr magneton per magnetic ion (Cu). Furthermore, in the vicinity of this plateau we observe sets of strong oscillations in the magnetic torque, reminiscent of quantum oscillations in metals. Such o…
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We apply a strong magnetic field to a kagome Mott insulator with antiferromagnetic interactions which does not show magnetic ordering down to low temperatures. We observe a plateau at magnetization 1/9 Bohr magneton per magnetic ion (Cu). Furthermore, in the vicinity of this plateau we observe sets of strong oscillations in the magnetic torque, reminiscent of quantum oscillations in metals. Such oscillations have never been seen in a wide gap insulator and point to an exotic origin. While the temperature dependence of these oscillations follows Fermi-liquid-theory predictions, they are approximately periodic in the magnetic field $H$, as opposed to $1/H$ in conventional metals. Furthermore, a strong angular dependence is observed for the period, which indicates an orbital origin for this effect. We show that the 1/9 plateau and the associated oscillations are consistent with the appearance of a quantum-spin-liquid state whose excitations are fermionic spinons that obey a Dirac spectrum. The oscillations are in response to an emergent gauge field. Our results provide strong evidence that fractionalized particles coupled to the elusive emergent gauge field have been observed.
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Submitted 11 October, 2023;
originally announced October 2023.
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Universal sublinear resistivity in vanadium kagome materials hosting charge density waves
Authors:
Shirin Mozaffari,
William R. Meier,
Richa P. Madhogaria,
Nikolai Peshcherenko,
Seoung-Hun Kang,
John W. Villanova,
Hasitha W. Suriya Arachchige,
Guoxin Zheng,
Yuan Zhu,
Kuan-Wen Chen,
Kaila Jenkins,
Dechen Zhang,
Aaron Chan,
Lu Li,
Mina Yoon,
Yang Zhang,
David G. Mandrus
Abstract:
The recent discovery of a charge density (CDW) state in ScV$_6$Sn$_6$ at $T_{\textrm{CDW}}$ = 91 K offers new opportunities to understand the origins of electronic instabilities in topological kagome systems. By comparing to the isostructural non-CDW compound LuV$_6$Sn$_6$, we unravel interesting electrical transport properties in ScV$_6$Sn$_6$, above and below the charge ordering temperature. We…
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The recent discovery of a charge density (CDW) state in ScV$_6$Sn$_6$ at $T_{\textrm{CDW}}$ = 91 K offers new opportunities to understand the origins of electronic instabilities in topological kagome systems. By comparing to the isostructural non-CDW compound LuV$_6$Sn$_6$, we unravel interesting electrical transport properties in ScV$_6$Sn$_6$, above and below the charge ordering temperature. We observed that by applying a magnetic field along the $a$ axis, the temperature behavior of the longitudinal resistivity in ScV$_6$Sn$_6$ changes from metal-like to insulator-like above the CDW transition. We show that in the charge ordered state ScV$_6$Sn$_6$ follows the Fermi liquid behavior while above that, it transforms into a non-Fermi liquid phase in which the resistivity varies sublinearly over a broad temperature range. The sublinear resistivity, which scales by $T^{3/5}$ is a common feature among other vanadium-containing kagome compounds exhibiting CDW states such as KV$_3$Sb$_5$, RbV$_3$Sb$_5$, and CsV$_3$Sb$_5$. By contrast, the non-Fermi liquid behavior does not occur in LuV$_6$Sn$_6$. We explain the $T^{3/5}$ universal scaling behavior from the Coulomb scattering between Dirac electrons and Van Hove singularities; common features in the electronic structure of kagome materials. Finally, we show anomalous Hall-like behavior in ScV$_6$Sn$_6$ below $T_{\textrm{CDW}}$, which is absent in the Lu compound. Comparing the transport properties of ScV$_6$Sn$_6$ and LuV$_6$Sn$_6$ is valuable to highlight the impacts of the unusual CDW in the Sc compound.
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Submitted 6 July, 2023; v1 submitted 3 May, 2023;
originally announced May 2023.
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High-frequency performance of scaled carbon nanotube array field-effect transistors
Authors:
Mathias Steiner,
Michael Engel,
Yu-Ming Lin,
Yanqing Wu,
Keith Jenkins,
Damon B. Farmer,
Jefford J. Humes,
Nathan L. Yoder,
Jung-Woo T. Seo,
Alexander A. Green,
Mark C. Hersam,
Ralph Krupke,
Phaedon Avouris
Abstract:
We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15…
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We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.
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Submitted 3 August, 2012;
originally announced August 2012.
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High-frequency performance of graphene field effect transistors with saturating IV-characteristics
Authors:
I. Meric,
C. R. Dean,
S. -J. Han,
L. Wang,
K. A. Jenkins,
J. Hone,
K. L. Shepard
Abstract:
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.
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Submitted 12 December, 2011;
originally announced December 2011.
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Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
Authors:
Yu-Ming Lin,
Damon B. Farmer,
Keith A. Jenkins,
Yanqing Wu,
L. Tedesco,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
D. Kurt Gaskill,
Christos Dimitrakopoulos,
Phaedon Avouris
Abstract:
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene te…
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This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far.
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Submitted 7 November, 2011;
originally announced November 2011.
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Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Authors:
Christos Dimitrakopoulos,
Yu-Ming Lin,
Alfred Grill,
Damon B. Farmer,
Marcus Freitag,
Yanning Sun,
Shu-Jen Han,
Zhihong Chen,
Keith A. Jenkins,
Yu Zhu,
Zihong Liu,
Timothy J. McArdle,
John A. Ott,
Robert Wisnieff,
Phaedon Avouris
Abstract:
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, fo…
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Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000 cm^2/Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. The growth process involved a combination of a cleaning step of the SiC in a Si-containing gas, followed by an annealing step in Argon for epitaxial graphene formation. The structure and morphology of this graphene has been characterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gated radio frequency field effect transistors (RF-FETs) with a peak cutoff frequency fT of 100 GHz for a gate length of 240 nm were fabricated using epitaxial graphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450 cm^2/Vs from ungated Hall bars and 1575 cm^2/Vs from top-gated ones. This is by far the highest cut-off frequency measured from any kind of graphene.
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Submitted 4 June, 2010;
originally announced June 2010.
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100 GHz Transistors from Wafer Scale Epitaxial Graphene
Authors:
Yu-Ming Lin,
Christos Dimitrakopoulos,
Keith A. Jenkins,
Damon B. Farmer,
Hsin-Ying Chiu,
Alfred Grill,
Phaedon Avouris
Abstract:
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate l…
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High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.
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Submitted 19 February, 2010;
originally announced February 2010.
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Dual Gate Graphene FETs with fT of 50 GHz
Authors:
Yu-Ming Lin,
Hsin-Ying Chiu,
Keith A. Jenkins,
Damon B. Farmer,
Phaedon Avouris,
Alberto Valdes-Garcia
Abstract:
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic do**. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is demonstrated in a 350-nm gate length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs…
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A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic do**. With a carrier mobility of 2700 cm2/Vs, a cutoff frequency of 50 GHz is demonstrated in a 350-nm gate length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOSFETs at the same gate length, illustrating the potential of graphene for RF applications.
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Submitted 17 December, 2009;
originally announced December 2009.
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Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
Authors:
Damon B. Farmer,
Hsin-Ying Chiu,
Yu-Ming Lin,
Keith A. Jenkins,
Fengnian Xia,
Phaedon Avouris
Abstract:
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis, and in the high-frequency ope…
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We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis, and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.
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Submitted 16 November, 2009;
originally announced November 2009.
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Operation of Graphene Transistors at GHz Frequencies
Authors:
Yu-Ming Lin,
Keith A. Jenkins,
Alberto Valdes-Garcia,
Joshua P. Small,
Damon B. Farmer,
Phaedon Avouris
Abstract:
Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate…
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Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.
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Submitted 8 December, 2008;
originally announced December 2008.
