Showing 1–26 of 26 results for author: Jaramillo, R

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Authors: Kevin Ye, Ida Sadeghi, Michael Xu, Jack Van Sambeek, Tao Cai, Jessica Dong, Rishabh Kothari, James M. LeBeau, R. Jaramillo

Abstract: We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photocondu… ▽ More We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Vibrational properties differ between halide and chalcogenide perovskite semiconductors, and it matters for optoelectronic performance

Authors: K. Ye, M. Menahem, T. Salzillo, F. Knoop, B. Zhao, S. Niu, O. Hellman, J. Ravichandran, R. Jaramillo, O. Yaffe

Abstract: We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-r… ▽ More We report a comparative study of temperature-dependent photoluminescence and structural dynamics of two perovskite semiconductors, the chalcogenide BaZrS$_3$ (BZS) and the halide CsPbBr$_3$ (CPB). These materials have similar crystal structures and direct band gaps, but we find that they have quite distinct optoelectronic and vibrational properties. Both materials exhibit thermally-activated non-radiative recombination, but the non-radiative recombination rate in BZS is between two and four orders of magnitude faster than in CPB. Raman spectroscopy reveals that the effects of phonon anharmonicity are far more pronounced in CPB than in BZS. Further, although both materials feature a large dielectric response due to low-energy polar optical phonons, the phonons in CPB are substantially lower in energy than in BZS. Our results suggest that electron-phonon coupling in BZS is more effective at non-radiative recombination than in CPB, and that BZS may also have a substantially higher concentration of non-radiative recombination centers than CPB. The low defect concentration in CPB may be related to the ease of lattice reconfiguration, typified by anharmonic bonding. It remains to be seen to what extent these differences are inherent to the chalcogenide and halide perovskites and to what extent they can be affected by materials processing; comparing BZS single-crystals and thin films provides reason for optimism. △ Less

Submitted 14 April, 2024; v1 submitted 29 February, 2024; originally announced February 2024.

Comments: Main text - 12 pages with 5 figures and 1 table. Supplemental text - 16 pages with 6 figures and 5 tables

Pressure-Dependent Layer-by-Layer Oxidation of ZrS2(001) Surface

Authors: Liqiu Yang, Rafael Jaramillo, Rajiv K. Kalia, Aiichiro Nakano, Priya Vashishta

Abstract: Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transit… ▽ More Understanding oxidation mechanisms of layered semiconducting transition-metal dichalcogenide (TMDC) is important not only for controlling native oxide formation but also for synthesis of oxide and oxysulfide products. Here, reactive molecular dynamics simulations show that oxygen partial pressure controls not only the ZrS2 oxidation rate but also the oxide morphology and quality. We find a transition from layer-by-layer oxidation to amorphous-oxide-mediated continuous oxidation as the oxidation progresses, where different pressures selectively expose different oxidation stages within a given time window. While the kinetics of the fast continuous oxidation stage is well described by the conventional Deal-Grove model, the layer-by-layer oxidation stage is dictated by reactive bond-switching mechanisms. This work provides atomistic details and a potential foundation for rational pressure-controlled oxidation of broad TMDC materials. △ Less

Submitted 6 March, 2023; originally announced March 2023.

A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy

Authors: Ida Sadeghi, Jack Van Sambeek, Tigran Simonian, Michael Xu, Kevin Ye, Valeria Nicolosi, James M. LeBeau, R. Jaramillo

Abstract: Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular bea… ▽ More Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites. △ Less

Submitted 29 December, 2022; v1 submitted 19 November, 2022; originally announced November 2022.

Modeling Defect-Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Authors: Jiahao Dong, R. Jaramillo

Abstract: Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We rec… ▽ More Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We recently demonstrated highly-nonlinear, hysteretic, two-terminal electronic devices using DLS in CdS [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys. Rev. Applied 15, 014014 (2021).] The resulting devices operate without mass transport, and in the opposite sense to most resistive switches: they are in a high-conductivity state at equilibrium, and switch to a low-conductivity state at forward bias. Although DLS uses the same defect transitions that are responsible for persistent photoconductivity, DLS devices operate without light and can be orders-of-magnitude faster due to exponential tuning of transition rates with voltage. In this work we use theory and numerical simulation to explore the design space of DLS devices, emphasizing the tradeoff between speed and on/off ratio. Our results will be useful to guide future applications of these unusual devices. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy

Authors: Ida Sadeghi, Kevin Ye, Michael Xu, James M. LeBeau, R. Jaramillo

Abstract: We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing g… ▽ More We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for develo** chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Growth kinetics and atomistic mechanisms of native oxidation of ZrS$_x$Se$_{2-x}$ and MoS$_2$ crystals

Authors: Seong Soon Jo, Akshay Singh, Liqiu Yang, Subodh C. Tiwari, Sungwook Hong, Aravind Krishnamoorthy, Maria Gabriela Sales, Sean M. Oliver, Joshua Fox, Randal L. Cavalero, David W. Snyder, Patrick M. Vora, Stephen J. McDonnell, Priya Vashishta, Rajiv K. Kalia, Aiichiro Nakano, Rafael Jaramillo

Abstract: A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and p… ▽ More A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS$_x$Se$_{2-x}$ alloys and MoS$_2$. ZrS$_x$Se$_{2-x}$ alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O$_2$ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO$_2$. In contrast, MoS$_2$ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS$_x$Se$_{2-x}$ and MoS$_2$, and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions. △ Less

Submitted 16 November, 2020; v1 submitted 30 June, 2020; originally announced July 2020.

Refractive uses of layered and two-dimensional materials for integrated photonics

Authors: Akshay Singh, Seong Soon Jo, Yifei Li, Changming Wu, Mo Li, R. Jaramillo

Abstract: The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confined geometry of photonic integrated circuits, where key material properties include strong and controllable light-matter interaction, and lim… ▽ More The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confined geometry of photonic integrated circuits, where key material properties include strong and controllable light-matter interaction, and limited optical loss. Layered materials feature tunable optical properties, phases that are promising for electro-optics, and a panoply of polymorphs that suggest a rich design space for highly-nonperturbative photonic integrated devices based on phase-change functionality. All of these features are manifest in materials with band gap above the photonics-relevant near-infrared (NIR) spectral band ($\sim$ 0.5 - 1 eV), meaning that they can be harnessed in refractive (i.e. non-absorptive) applications. △ Less

Submitted 30 October, 2020; v1 submitted 30 June, 2020; originally announced June 2020.

Comments: review paper. ACS Photonics (2020)

Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7

Authors: Stephen Filippone, Boyang Zhao, Shanyuan Niu, Nathan Z. Koocher, Daniel Silevitch, Ignasi Fina, James M. Rondinelli, Jayakanth Ravichandran, R. Jaramillo

Abstract: There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogen… ▽ More There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides. Here we introduce complex chalcogenides in the Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a new family of highly polarizable semiconductors. We report the results of impedance spectroscopy on single crystals that establish BaZrS3 and Ba3Zr2S7 as semiconductors with low-frequency relative dielectric constant ($ε_0$) in the range 50 - 100, and band gap in the range 1.3 - 1.8 eV. Our electronic structure calculations indicate the enhanced dielectric response in perovskite BaZrS3 versus Ruddlesden-Popper Ba3Zr2S7 is primarily due to enhanced IR mode-effective charges, and variations in phonon frequencies along $\langle 001 \rangle$; differences in the Born effective charges and the lattice stiffness are of secondary importance. This combination of covalent bonding in crystal structures more common to complex oxides results in a sizable Fröhlich coupling constant, which suggests that charge carriers are large polarons. △ Less

Submitted 18 June, 2020; originally announced June 2020.

Comments: 22 pages, 5 figures

Journal ref: Phys. Rev. Materials 4, 091601 (2020)

Defect Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Authors: Han Yin, Abinash Kumar, James M. LeBeau, R. Jaramillo

Abstract: Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can b… ▽ More Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect level switching (DLS). This new electronic device design principle - photoconductivity without photons - leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of new nonlinear, hysteretic devices for future electronics. △ Less

Submitted 16 May, 2020; originally announced May 2020.

Comments: Text and supplemental merged into one file

Journal ref: Phys. Rev. Applied 15, 014014 (2021)

In Praise and in Search of Highly-Polarizable Semiconductors

Authors: Rafael Jaramillo, Jayakanth Ravichandran

Abstract: The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that ch… ▽ More The dielectric response of materials underpins electronics and photonics. Established semiconductor materials have a narrow range of dielectric susceptibility, with low-frequency values on the order of 10. Strong and variable dielectric response in wide-band gap materials is associated with complex crystal structures and heavier elements. Based on underlying chemical trends, we hypothesize that chalcogenides in crystal structures common to complex oxides may feature many highly-polarizable semiconductors. Research on these materials is motivated by fundamental inquiry into electrons and phonons in solids, and by potential applications in photonics, high-frequency communications, and photovoltaics. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Near-infrared optical properties and proposed phase-change usefulness of transition metal disulfides

Authors: Akshay Singh, Yifei Li, Balint Fodor, Laszlo Makai, Jian Zhou, Haowei Xu, Austin Akey, Ju Li, R. Jaramillo

Abstract: The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qual… ▽ More The development of photonic integrated circuits would benefit from a wider selection of materials that can strongly-control near-infrared (NIR) light. Transition metal dichalcogenides (TMDs) have been explored extensively for visible spectrum opto-electronics, but the NIR properties of these layered materials have been less-studied. The measurement of optical constants is the foremost step to qualify TMDs for use in NIR photonics. Here we measure the complex optical constants for select sulfide TMDs (bulk crystals of MoS2, TiS2 and ZrS2) via spectroscopic ellipsometry in the visible-to-NIR range. Through Mueller matrix measurements and generalized ellipsometry, we explicitly measure the direction of the ordinary optical axis. We support our measurements with density functional theory (DFT) calculations, which agree with our measurements and predict giant birefringence. We further propose that TMDs could find use as photonic phase-change materials, by designing alloys that are thermodynamically adjacent to phase boundaries between competing crystal structures, to realize martensitic (i.e. displacive, order-order) switching. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Comments: supplementary at end of document. 6 main figures

Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$

Authors: Shanyuan Niu, Boyang Zhao, Kevin Ye, Elisabeth Bianco, Jieyang Zhou, Michael E. McConney, Charles Settens, Ralf Haiges, R. Jaramillo, Jayakanth Ravichandran

Abstract: Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space g… ▽ More Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles. △ Less

Submitted 12 September, 2019; v1 submitted 25 April, 2019; originally announced April 2019.

Comments: 4 Figures, 2 Tables

Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells

Authors: Shanyuan Niu, Debarghya Sarkar, Kristopher Williams, Yucheng Zhou, Yuwei Li, Elisabeth Bianco, Huaixun Huyan, Stephen B. Cronin, Michael E. McConney, Ralf Haiges, R. Jaramillo, David J. Singh, William A. Tisdale, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical stu… ▽ More Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical studies have predicted large absorption coefficient, desirable defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent progresses in polycrystalline synthesis and measurements of their optical properties, it is necessary to grow these materials in high crystalline quality to develop a fundamental understanding of their optical properties and evaluate their suitability for photovoltaic application. Here, we report the growth of single crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7, with a natural superlattice-like structure of alternating double-layer perovskite blocks and single-layer rock salt structure. The material demonstrated a bright photoluminescence peak at 1.28 eV with a large external luminescence efficiency of up to 0.15%. We performed time-resolved photoluminescence spectroscopy on these crystals and obtained an effective recombination time of ~65 ns. These results clearly show that 2D Ruddlesden-Popper phases of perovskite chalcogenides are promising materials to achieve single-junction solar cells. △ Less

Submitted 25 June, 2018; originally announced June 2018.

Comments: 4 Figures

Journal ref: Chem. Mater. 2018, 30, 15, 4882-4886

Large and Persistent Photoconductivity due to Hole-Hole Correlation in CdS

Authors: Han Yin, Austin Akey, R. Jaramillo

Abstract: Large and persistent photoconductivity (LPPC) in semiconductors is due to the trap** of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become kinetically trapped by lattice relaxation following photo-excitation. By performing a detailed analy… ▽ More Large and persistent photoconductivity (LPPC) in semiconductors is due to the trap** of photo-generated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become kinetically trapped by lattice relaxation following photo-excitation. By performing a detailed analysis of photoconductivity in CdS, we provide experimental support for this negative-U model of LPPC. We also show that LPPC is correlated with sulfur deficiency. We use this understanding to vary the photoconductivity of CdS films over nine orders of magnitude, and vary the LPPC characteristic decay time from seconds to 10^4 seconds, by controlling the activities of Cd^{2+} and S^{2-} ions during chemical bath deposition. We suggest a screening method to identify other materials with long-lived, non-equilibrium, photo-excited states based on the results of ground-state calculations of atomic rearrangements following defect redox reactions, with a conceptual connection to polaron formation. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. Materials 2, 084602 (2018)

Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material

Authors: R. Jaramillo, Meng-Ju Sher, Benjamin K. Ofori-Okai, V. Steinmann, Chuanxi Yang, Katy Hartman, Keith A. Nelson, Aaron M. Lindenberg, Roy G. Gordon, T. Buonassisi

Abstract: Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measureme… ▽ More Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measurements of bulk and interface minority-carrier recombination rates in SnS thin films using optical-pump, terahertz (THz)-probe transient photoconductivity (TPC) measurements. Post-growth thermal annealing in H_2S gas increases the minority-carrier lifetime, and oxidation of the surface reduces the surface recombination velocity. However, the minority-carrier lifetime remains below 100 ps for all tested combinations of growth technique and post-growth processing. Significant improvement in SnS solar cell performance will hinge on finding and mitigating as-yet-unknown recombination-active defects. We describe in detail our methodology for TPC experiments, and we share our data analysis routines as freely-available software. △ Less

Submitted 24 November, 2015; originally announced November 2015.

Using atom probe tomography to understand Schottky barrier height pinning at the ZnO:Al / SiO2 / Si interface

Authors: R. Jaramillo, Amanda Youssef, Austin Akey, Frank Schoofs, Shriram Ramanathan, Tonio Buonassisi

Abstract: We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface… ▽ More We use electronic transport and atom probe tomography to study ZnO:Al / SiO2 / Si Schottky junctions on lightly-doped n- and p-type Si. We vary the carrier concentration in the the ZnO:Al films by two orders of magnitude but the Schottky barrier height remains constant, consistent with Fermi level pinning seen in metal / Si junctions. Atom probe tomography shows that Al segregates to the interface, so that the ZnO:Al at the junction is likely to be metallic even when the bulk of the ZnO:Al film is semiconducting. We hypothesize that Fermi level pinning is connected to the insulator-metal transition in doped ZnO, and that controlling this transition may be key to un-pinning the Fermi level in oxide / Si Schottky junctions. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. Applied 6, 034016 (2016)

Origins of bad metal conductivity and the insulator-metal transition in the rare-earth nickelates

Authors: R. Jaramillo, Sieu D. Ha, D. M. Silevitch, Shriram Ramanathan

Abstract: For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3… ▽ More For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenberg's uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low σwhile preserving the Drude model and without violating the uncertainty principle. △ Less

Submitted 27 September, 2013; originally announced September 2013.

Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism

Authors: Sieu D. Ha, R. Jaramillo, D. M. Silevitch, Frank Schoofs, Kian Kerman, John D. Baniecki, Shriram Ramanathan

Abstract: The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with va… ▽ More The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present temperature-dependent transport measurements of the resistivity, magnetoresistance, Seebeck coefficient, and Hall coefficient (RH) of epitaxial SmNiO3 thin films with varying oxygen stoichiometry. We find that from room temperature through the high temperature insulator-metal transition, the Hall coefficient is hole-like and the Seebeck coefficient is electron-like. At low temperature the Néel transition induces a crossover in the sign of RH to electron-like, similar to the effects of spin density wave formation in metallic systems but here arising in an insulating phase ~200 K below the insulator-metal transition. We propose that antiferromagnetism can be stabilized by bandstructure even in insulating phases of correlated oxides, such as RNiO3, that fall between the limits of strong and weak electron correlation. △ Less

Submitted 5 March, 2013; v1 submitted 9 January, 2013; originally announced January 2013.

Comments: *Equally contributing first authors

Journal ref: Phys. Rev. B 87, 125150 (2013)

Resolving magnetic frustration in a pyrochlore lattice

Authors: Jiyang Wang, Yejun Feng, R. Jaramillo, Jasper van Wezel, P. C. Canfield, T. F. Rosenbaum

Abstract: CeFe$_2$ is a geometrically frustrated ferromagnet that lies close to an instability at which a subtle change in the lattice symmetry couples to a transition to antiferromagnetism. We use x-ray diffraction, diamond-anvil-cell techniques, and numerical simulation to identify the ground states and to quantitatively illustrate effects of competing magnetic energy scales and geometrical frustration on… ▽ More CeFe$_2$ is a geometrically frustrated ferromagnet that lies close to an instability at which a subtle change in the lattice symmetry couples to a transition to antiferromagnetism. We use x-ray diffraction, diamond-anvil-cell techniques, and numerical simulation to identify the ground states and to quantitatively illustrate effects of competing magnetic energy scales and geometrical frustration on the magnetic phase diagram. Comparison of phase transitions under both chemical substitution and applied pressure suggests a general solution to the physics of pyrochlore rare earth inter-metallic magnets. △ Less

Submitted 27 September, 2011; originally announced September 2011.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B, Vol. 86, 014422 (2012)

Order parameter fluctuations at a buried quantum critical point

Authors: Yejun Feng, Jiyang Wang, R. Jaramillo, Jasper van Wezel, S. Haravifard, G. Srajer, Y. Liu, Z. -A. Xu, P. B. Littlewood, T. F. Rosenbaum

Abstract: Quantum criticality is a central concept in condensed matter physics, but the direct observation of quantum critical fluctuations has remained elusive. Here we present an x-ray diffraction study of the charge density wave (CDW) in 2H-NbSe2 at high pressure and low temperature, where we observe a broad regime of order parameter fluctuations that are controlled by proximity to a quantum critical poi… ▽ More Quantum criticality is a central concept in condensed matter physics, but the direct observation of quantum critical fluctuations has remained elusive. Here we present an x-ray diffraction study of the charge density wave (CDW) in 2H-NbSe2 at high pressure and low temperature, where we observe a broad regime of order parameter fluctuations that are controlled by proximity to a quantum critical point. X-rays can track the CDW despite the fact that the quantum critical regime is shrouded inside a superconducting phase, and, in contrast to transport probes, allow direct measurement of the critical fluctuations of the charge order. Concurrent measurements of the crystal lattice point to a critical transition that is continuous in nature. Our results confirm the longstanding expectations of enhanced quantum fluctuations in low dimensional systems, and may help to constrain theories of the quantum critical Fermi surface. △ Less

Submitted 12 March, 2012; v1 submitted 1 September, 2011; originally announced September 2011.

Comments: to be published in PNAS

Journal ref: Proc. Nat. Acad. Sci. USA, Vol 109, page 7224 (2012)

Magnetism, structure, and charge correlation at a pressure-induced Mott-Hubbard insulator-metal transition

Authors: Yejun Feng, R. Jaramillo, A. Banerjee, J. M. Honig, T. F. Rosenbaum

Abstract: We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic order results from superexchange among correlated electrons and couples to a (1/2, 1/2, 1/2) superlattice distortion. Applying pressure suppresses the insulating… ▽ More We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic order results from superexchange among correlated electrons and couples to a (1/2, 1/2, 1/2) superlattice distortion. Applying pressure suppresses the insulating state, but enhances the magnetism as the superexchange increases with decreasing lattice constant. By comparing our results under pressure to previous studies of doped crystals we show that this dependence of the magnetism on the lattice constant is consistent for both band broadening and band filling. In the high pressure metallic phase the lattice symmetry is reduced from cubic to monoclinic, pointing to the primary influence of charge correlations at the transition. There exists a wide regime of phase separation that may be a general characteristic of correlated quantum matter. △ Less

Submitted 28 November, 2010; v1 submitted 11 April, 2010; originally announced April 2010.

Comments: 5 pages, 3 figures

Chromium at High Pressures: Weak Coupling and Strong Fluctuations in an Itinerant Antiferromagnet

Authors: R. Jaramillo, Yejun Feng, J. C. Lang, Z. Islam, G. Srajer, H. M. Ronnow, P. B. Littlewood, T. F. Rosenbaum

Abstract: The spin- and charge-density-wave order parameters of the itinerant antiferromagnet chromium are measured directly with non-resonant x-ray diffraction as the system is driven towards its quantum critical point with high pressure using a diamond anvil cell. The exponential decrease of the spin and charge diffraction intensities with pressure confirms the harmonic scaling of spin and charge, while… ▽ More The spin- and charge-density-wave order parameters of the itinerant antiferromagnet chromium are measured directly with non-resonant x-ray diffraction as the system is driven towards its quantum critical point with high pressure using a diamond anvil cell. The exponential decrease of the spin and charge diffraction intensities with pressure confirms the harmonic scaling of spin and charge, while the evolution of the incommensurate ordering vector provides important insight into the difference between pressure and chemical do** as means of driving quantum phase transitions. Measurement of the charge density wave over more than two orders of magnitude of diffraction intensity provides the clearest demonstration to date of a weakly-coupled, BCS-like ground state. Evidence for the coexistence of this weakly-coupled ground state with high-energy excitations and pseudogap formation above the ordering temperature in chromium, the charge-ordered perovskite manganites, and the blue bronzes, among other such systems, raises fundamental questions about the distinctions between weak and strong coupling. △ Less

Submitted 28 February, 2008; originally announced February 2008.

Comments: 11 pages, 9 figures (8 in color)

Pressure-Tuned Spin and Charge Ordering in an Itinerant Antiferromagnet

Authors: Yejun Feng, R. Jaramillo, G. Srajer, J. C. Lang, Z. Islam, M. S. Somayazulu, O. G. Shpyrko, J. J. Pluth, H. -k. Mao, E. D. Isaacs, G. Aeppli, T. F. Rosenbaum

Abstract: Elemental chromium orders antiferromagnetically near room temperature, but the ordering temperature can be driven to zero by applying large pressures. We combine diamond anvil cell and synchrotron x-ray diffraction techniques to measure directly the spin and charge order in the pure metal at the approach to its quantum critical point. Both spin and charge order are suppressed exponentially with… ▽ More Elemental chromium orders antiferromagnetically near room temperature, but the ordering temperature can be driven to zero by applying large pressures. We combine diamond anvil cell and synchrotron x-ray diffraction techniques to measure directly the spin and charge order in the pure metal at the approach to its quantum critical point. Both spin and charge order are suppressed exponentially with pressure, well beyond the region where disorder cuts off such a simple evolution, and they maintain a harmonic scaling relationship over decades in scattering intensity. By comparing the development of the order parameter with that of the magnetic wavevector, it is possible to ascribe the destruction of antiferromagnetism to the growth in electron kinetic energy relative to the underlying magnetic exchange interaction. △ Less

Submitted 13 August, 2007; originally announced August 2007.

Direct measurement of antiferromagnetic domain fluctuations

Authors: O. G. Shpyrko, E. D. Isaacs, J. M. Logan, Yejun Feng, G. Aeppli, R. Jaramillo, H. C. Kim, T. F. Rosenbaum, P. Zschack, M. Sprung, S. Narayanan, A. R. Sandy

Abstract: Measurements of magnetic noise emanating from ferromagnets due to domain motion were first carried out nearly 100 years ago and have underpinned much science and technology. Antiferromagnets, which carry no net external magnetic dipole moment, yet have a periodic arrangement of the electron spins extending over macroscopic distances, should also display magnetic noise, but this must be sampled a… ▽ More Measurements of magnetic noise emanating from ferromagnets due to domain motion were first carried out nearly 100 years ago and have underpinned much science and technology. Antiferromagnets, which carry no net external magnetic dipole moment, yet have a periodic arrangement of the electron spins extending over macroscopic distances, should also display magnetic noise, but this must be sampled at spatial wavelengths of order several interatomic spacings, rather than the macroscopic scales characteristic of ferromagnets. Here we present the first direct measurement of the fluctuations in the nanometre-scale spin- (charge-) density wave superstructure associated with antiferromagnetism in elemental Chromium. The technique used is X-ray Photon Correlation Spectroscopy, where coherent x-ray diffraction produces a speckle pattern that serves as a "fingerprint" of a particular magnetic domain configuration. The temporal evolution of the patterns corresponds to domain walls advancing and retreating over micron distances. While the domain wall motion is thermally activated at temperatures above 100K, it is not so at lower temperatures, and indeed has a rate which saturates at a finite value - consistent with quantum fluctuations - on cooling below 40K. Our work is important because it provides an important new measurement tool for antiferromagnetic domain engineering as well as revealing a fundamental new fact about spin dynamics in the simplest antiferromagnet. △ Less

Submitted 10 February, 2007; originally announced February 2007.

Comments: 19 pages, 4 figures

Journal ref: Nature 447, 68 (2007)

Microscopic and Macroscopic Signatures of Antiferromagnetic Domain Walls

Authors: R. Jaramillo, T. F. Rosenbaum, E. D. Isaacs, O. G. Shpyrko, P. G. Evans, G. Aeppli, Z. Cai

Abstract: Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electr… ▽ More Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with the real-space evolution of the domain configuration as recorded by x-ray microprobe imaging, revealing the effect of antiferromagnetic domain walls on electron transport. A single antiferromagnetic domain wall interface resistance is deduced to be of order $5\times10^{-5}\mathrm{μΩ\cdot cm^{2}}$ at a temperature of 100 K. △ Less

Submitted 1 December, 2006; originally announced December 2006.

Comments: 3 color figures