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Strong hole-photon coupling in planar Ge: probing the charge degree and Wigner molecule states
Authors:
Franco De Palma,
Fabian Oppliger,
Won** Jang,
Stefano Bosco,
Marián Janík,
Stefano Calcaterra,
Georgios Katsaros,
Giovanni Isella,
Daniel Loss,
Pasquale Scarlino
Abstract:
Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling.…
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Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as frontrunners for future hole-based quantum processors. Notably, the large spin-orbit interaction of holes offers rapid, coherent electrical control of spin states, which can be further beneficial for interfacing hole spins to microwave photons in superconducting circuits via coherent charge-photon coupling. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in a planar Ge, and microwave photons in a high-impedance ($Z_\mathrm{r} = 1.3 ~ \mathrm{k}Ω$) superconducting quantum interference device (SQUID) array resonator. Our investigation reveals vacuum-Rabi splittings with coupling strengths up to $g_{0}/2π= 260 ~ \mathrm{MHz}$, and a cooperativity of $C \sim 100$, dependent on DQD tuning, confirming the strong charge-photon coupling regime within planar Ge. Furthermore, utilizing the frequency tunability of our resonator, we explore the quenched energy splitting associated with strongly-correlated Wigner molecule (WM) states that emerge in Ge QDs. The observed enhanced coherence of the WM excited state signals the presence of distinct symmetries within related spin functions, serving as a precursor to the strong coupling between photons and spin-charge hybrid qubits in planar Ge. This work paves the way towards coherent quantum connections between remote hole qubits in planar Ge, required to scale up hole-based quantum processors.
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Submitted 31 October, 2023;
originally announced October 2023.
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Coherence of a field-gradient-driven singlet-triplet qubit coupled to many-electron spin states in 28Si/SiGe
Authors:
Younguk Song,
Jonginn Yun,
Jehyun Kim,
Won** Jang,
Hyeongyu Jang,
Jaemin Park,
Min-Kyun Cho,
Hanseo Sohn,
Noritaka Usami,
Satoru Miyamoto,
Kohei M. Itoh,
Dohun Kim
Abstract:
Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet…
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Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based on single spins in silicon, corresponding demonstration for encoded spin qubits is so far limited to natural silicon. Here, we demonstrate fast singlet-triplet qubit oscillation (~100 MHz) in a gate-defined double quantum dot in $^{28}$Si/SiGe with an on-chip micromagnet with which we show the oscillation quality factor of an encoded spin qubit exceeding 580. The coherence time $\textit{T}_{2}$* is analyzed as a function of potential detuning and an external magnetic field. In weak magnetic fields, the coherence is limited by fast noise compared to the data acquisition time, which limits $\textit{T}_{2}$* < 1 $μ$s in the ergodic limit. We present evidence of sizable and coherent coupling of the qubit with the spin states of a nearby quantum dot, demonstrating that appropriate spin-electric coupling may enable a charge-based two-qubit gate in a (1,1) charge configuration.
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Submitted 25 October, 2023; v1 submitted 19 October, 2023;
originally announced October 2023.
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Development of a Scanning Tunneling Microscope for Variable Temperature Electron Spin Resonance
Authors:
Jiyoon Hwang,
Denis Krylov,
Robertus J. G. Elbertse,
Sangwon Yoon,
Taehong Ahn,
Jeongmin Oh,
Lei Fang,
Won-jun Jang,
Franklin H. Cho,
Andreas J. Heinrich,
Yujeong Bae
Abstract:
Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a home-built STM capable of ESR at temperatures ranging from 1 K to 10 K. The STM is incorporated with a home-built Joule-Thomson refrigerator and a 2-axis vector magnet.…
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Recent advances in increasing the spectroscopic energy resolution in scanning tunneling microscopy (STM) have been achieved by integrating electron spin resonance (ESR) with STM. Here, we demonstrate the design and performance of a home-built STM capable of ESR at temperatures ranging from 1 K to 10 K. The STM is incorporated with a home-built Joule-Thomson refrigerator and a 2-axis vector magnet. Our STM design allows for the deposition of atoms and molecules directly into the cold STM, eliminating the need to extract the sample for deposition. In addition, we adopt two methods to apply radio-frequency (RF) voltages to the tunnel junction, the early design of wiring to the STM tip directly, and a more recent idea to use an RF antenna. Direct comparisons of ESR results measured using the two methods and simulations of electric field distribution around the tunnel junction show that, despite their different designs and capacitive couplings to the tunnel junction, there is no discernible difference in the driving and detection of ESR. Furthermore, at a magnetic field of 1.6 T, we observe ESR signals (near 40 GHz) sustained up to 10 K, which is the highest temperature for ESR-STM measurement reported to date, to the best of our knowledge. Although the ESR intensity exponentially decreases with increasing temperature, our ESR-STM system with low noise at the tunnel junction allows us to measure weak ESR signals with intensities in the sub-fA range. Our new design of ESR-STM, which is operational in a large frequency and temperature range, can broaden the use of ESR spectroscopy in STM and enable the simple modification of existing STM systems, which will hopefully accelerate a generalized use of ESR-STM.
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Submitted 23 August, 2022;
originally announced August 2022.
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Wigner-molecularization-enabled dynamic nuclear field programming
Authors:
Won** Jang,
Jehyun Kim,
Jaemin Park,
Gyeonghun Kim,
Min-Kyun Cho,
Hyeongyu Jang,
Sangwoo Sim,
Byoungwoo Kang,
Hwanchul Jung,
Vladimir Umansky,
Dohun Kim
Abstract:
Multielectron semiconductor quantum dots (QDs) provide a novel platform to study the role of Coulomb correlations in finite quantum systems and their impact on many-body energy spectra. An example is the formation of interaction-driven, spatially localized electron states of Wigner molecules (WMs). Although Wigner molecularization has been confirmed by real-space imaging and coherent spectroscopy,…
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Multielectron semiconductor quantum dots (QDs) provide a novel platform to study the role of Coulomb correlations in finite quantum systems and their impact on many-body energy spectra. An example is the formation of interaction-driven, spatially localized electron states of Wigner molecules (WMs). Although Wigner molecularization has been confirmed by real-space imaging and coherent spectroscopy, the open system dynamics of the strongly-correlated states with the environment are not yet well understood. Here, we demonstrate efficient control of spin transfer between an artificial three-electron WM and the nuclear environment in a GaAs double QD. A Landau-Zener sweep-based polarization sequence and low-lying anti-crossings of spin multiplet states enabled by Wigner molecularization are utilized. An efficient polarization rate of 2.58 $h \cdotp kHz \cdotp (g^* \cdotp μ_B)^{-1}$ per electron spin flip and, consequently, programmable nuclear polarization by controlled single-electron tunneling are achieved. Combined with coherent control of spin states, we achieve control of magnitude, polarity, and site dependence of the nuclear field. It is demonstrated that the same level of control cannot be achieved in the non-interacting regime. Thus, we confirm the multiplet spin structure of a WM, paving the way for active control of newly emerging correlated electron states for application in mesoscopic environment engineering.
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Submitted 24 July, 2022;
originally announced July 2022.
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Probing two-qubit capacitive interactions beyond bilinear regime using dual Hamiltonian parameter estimations
Authors:
Jonginn Yun,
Jaemin Park,
Hyeongyu Jang,
Jehyun Kim,
Won** Jang,
Youngwook Song,
Min-Kyun Cho,
Hanseo Sohn,
Hwanchul Jung,
Vladimir Umansky,
Dohun Kim
Abstract:
We report the simultaneous operation and two-qubit coupling measurement of a pair of two-electron spin qubits that are actively decoupled from quasistatic nuclear noise in a GaAs quadruple quantum dot array. Coherent Rabi oscillations of both qubits (decay time $\approx$2 μs; frequency few MHz) are achieved by continuously tuning the drive frequency using rapidly converging real-time Hamiltonian e…
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We report the simultaneous operation and two-qubit coupling measurement of a pair of two-electron spin qubits that are actively decoupled from quasistatic nuclear noise in a GaAs quadruple quantum dot array. Coherent Rabi oscillations of both qubits (decay time $\approx$2 μs; frequency few MHz) are achieved by continuously tuning the drive frequency using rapidly converging real-time Hamiltonian estimators. By state conditional exchange oscillation measurements, we also observe strong two-qubit capacitive interaction (> 190 MHz). We show that the scaling of the capacitive interaction with respect to intra-qubit exchange energies is stronger than the bilinear form, consistent with recent theoretical predictions. We observe a high ratio (>16) between coherence and conditional phase-flip time, which supports the possibility of generating high-fidelity and fast quantum entanglement between encoded spin qubits using a simple capacitive interaction.
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Submitted 30 March, 2023; v1 submitted 9 June, 2022;
originally announced June 2022.
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Approaching ideal visibility in singlet-triplet qubit operations using energy-selective tunneling-based Hamiltonian estimation
Authors:
Jehyun Kim,
Jonginn Yun,
Won** Jang,
Hyeongyu Jang,
Jaemin Park,
Youngwook Song,
Min-Kyun Cho,
Sangwoo Shim,
Hanseo Sohn,
Hwanchul Jung,
Vladimir Umansky,
Dohun Kim
Abstract:
We report energy selective tunneling readout-based Hamiltonian parameter estimation of a two-electron spin qubit in a GaAs quantum dot array. Optimization of readout fidelity enables a single-shot measurement time of 16 on average, with adaptive initialization and efficient qubit frequency estimation based on real-time Bayesian inference. For qubit operation in a frequency heralded mode, we observ…
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We report energy selective tunneling readout-based Hamiltonian parameter estimation of a two-electron spin qubit in a GaAs quantum dot array. Optimization of readout fidelity enables a single-shot measurement time of 16 on average, with adaptive initialization and efficient qubit frequency estimation based on real-time Bayesian inference. For qubit operation in a frequency heralded mode, we observe a 40-fold increase in coherence time without resorting to dynamic nuclear polarization. We also demonstrate active frequency feedback with quantum oscillation visibility, single-shot measurement fidelity, and state initialization fidelity up to 97.7%, 99%, and over 99.7%, respectively. By pushing the sensitivity of the energy selective tunneling-based spin to charge conversion to the limit, the technique is useful for advanced quantum control protocols such as error mitigation schemes, where fast qubit parameter calibration with a large signal-to-noise ratio is crucial.
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Submitted 10 June, 2022; v1 submitted 2 March, 2022;
originally announced March 2022.
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Thermal conductivity of intercalation, conversion, and alloying lithium-ion battery electrode materials as function of their state of charge
Authors:
Jungwoo Shin,
Sanghyeon Kim,
Hoonkee Park,
Ho Won Jang,
David G. Cahill,
Paul V. Braun
Abstract:
Upon insertion and extraction of lithium, materials important for electrochemical energy storage can undergo changes in thermal conductivity ($Λ$) and elastic modulus ($\it M$). These changes are attributed to evolution of the intrinsic thermal carrier lifetime and interatomic bonding strength associated with structural transitions of electrode materials with varying degrees of reversibility. Usin…
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Upon insertion and extraction of lithium, materials important for electrochemical energy storage can undergo changes in thermal conductivity ($Λ$) and elastic modulus ($\it M$). These changes are attributed to evolution of the intrinsic thermal carrier lifetime and interatomic bonding strength associated with structural transitions of electrode materials with varying degrees of reversibility. Using in situ time-domain thermoreflectance (TDTR) and picosecond acoustics, we systemically study $Λ$ and $\it M$ of conversion, intercalation and alloying electrode materials during cycling. The intercalation V$_{2}$O$_{5}$ and TiO$_{2}$ exhibit non-monotonic reversible $Λ$ and $\it M$ switching up to a factor of 1.8 ($Λ$) and 1.5 ($\it M$) as a function of lithium content. The conversion Fe$_{2}$O$_{3}$ and NiO undergo irreversible decays in $Λ$ and $\it M$ upon the first lithiation. The alloying Sb shows the largest and partially reversible order of the magnitude switching in $Λ$ between the delithiated (18 W m$^{-1}$ K$^{-1}$) and lithiated states (<1 W m$^{-1}$ K$^{-1}$). The irreversible $Λ$ is attributed to structural degradation and pulverization resulting from substantial volume changes during cycling. These findings provide new understandings of the thermal and mechanical property evolution of electrode materials during cycling of importance for battery design, and also point to pathways for forming materials with thermally switchable properties.
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Submitted 21 September, 2021; v1 submitted 30 June, 2021;
originally announced June 2021.
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Spin Resonance Amplitude and Frequency of a Single Atom on a Surface in a Vector Magnetic Field
Authors:
**kyung Kim,
Won-jun Jang,
Thi Hong Bui,
Deung-jang Choi,
Christoph Wolf,
Fernando Delgado,
Denis Krylov,
Soonhyeong Lee,
Sangwon Yoon,
Christopher P. Lutz,
Andreas J. Heinrich,
Yujeong Bae
Abstract:
We used electron spin resonance (ESR) combined with scanning tunneling microscopy (STM) to measure hydrogenated Ti (spin-1/2) atoms at low-symmetry binding sites on MgO in vector magnetic fields. We found strongly anisotropic g-values in all three spatial directions. Interestingly, the amplitude and lineshape of the ESR signals are also strongly dependent on the angle of the field. We conclude tha…
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We used electron spin resonance (ESR) combined with scanning tunneling microscopy (STM) to measure hydrogenated Ti (spin-1/2) atoms at low-symmetry binding sites on MgO in vector magnetic fields. We found strongly anisotropic g-values in all three spatial directions. Interestingly, the amplitude and lineshape of the ESR signals are also strongly dependent on the angle of the field. We conclude that the Ti spin is aligned along the magnetic field, while the tip spin follows its strong magnetic anisotropy. Our results show the interplay between the tip and surface spins in determining the ESR signals and highlight the precision of ESR-STM to identify the single atom's spin states.
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Submitted 17 March, 2021;
originally announced March 2021.
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Hund's physics and the magnetic ground state of CrOX (X = Cl, Br)
Authors:
Seung Woo Jang,
Do Hoon Kiem,
Juhyeok Lee,
Yoon-Gu Kang,
Hongkee Yoon,
Myung Joon Han
Abstract:
To understand the magnetic property of layered van der Waals materials CrOX (X = Cl, Br), we performed the detailed first-principles calculations for both bulk and monolayer. We found that the charge-only density functional theory combined with the explicit on-site interaction terms (so-called cDFT$+U$) well reproduces the experimental magnetic ground state of bulk CrOX, which is not the case for…
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To understand the magnetic property of layered van der Waals materials CrOX (X = Cl, Br), we performed the detailed first-principles calculations for both bulk and monolayer. We found that the charge-only density functional theory combined with the explicit on-site interaction terms (so-called cDFT$+U$) well reproduces the experimental magnetic ground state of bulk CrOX, which is not the case for the use of spin-dependent density functional (so-called sDFT$+U$). Unlike some of the previous studies, our results show that CrOX monolayers are antiferromagnetic as in the bulk. It is also consistent with our magnetic force linear response calculation of exchange couplings $J_{\rm ex}$. The result of orbital-decomposed $J_{\rm ex}$ calculations shows that the Cr $t_\textrm{2g}$-$t_\textrm{2g}$ component mainly contributes to the antiferromagnetic order in both bulk and monolayer. Our result and analysis show that taking the correct Hund's physics into account is of key importance to construct the magnetic phase diagram and to describe the electronic structure.
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Submitted 21 February, 2021;
originally announced February 2021.
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Three individual two-axis control of singlet-triplet qubits in a micromagnet integrated quantum dot array
Authors:
Won** Jang,
Min-Kyun Cho,
Jehyun Kim,
Hwanchul Chung,
Vladimir Umansky,
Dohun Kim
Abstract:
We report individual confinement and two-axis qubit operations of two electron spin qubits in GaAs gate-defined sextuple quantum dot array with integrated micro-magnet. As a first step toward multiple qubit operations, we demonstrate coherent manipulations of three singlet-triplet qubits showing underdamped Larmor and Ramsey oscillations in all double dot sites. We provide an accurate measure of s…
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We report individual confinement and two-axis qubit operations of two electron spin qubits in GaAs gate-defined sextuple quantum dot array with integrated micro-magnet. As a first step toward multiple qubit operations, we demonstrate coherent manipulations of three singlet-triplet qubits showing underdamped Larmor and Ramsey oscillations in all double dot sites. We provide an accurate measure of site site-dependent field gradients and rms electric and magnetic noise, and we discuss the adequacy of simple rectangular micro-magnet for practical use in multiple quantum dot arrays. We also discuss current limitations and possible strategies for realizing simultaneous multi multi-qubit operations in extended linear arrays.
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Submitted 2 October, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
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Superconducting cavity in a high magnetic field
Authors:
Danho Ahn,
Ohjoon Kwon,
Woohyun Chung,
Wonjun Jang,
Doyu Lee,
Jhinhwan Lee,
Sung Woo Youn,
Dojun Youm,
Yannis K. Semertzidis
Abstract:
A high Q-factor microwave resonator in a high magnetic field could be used in a wide range of applications, especially for enhancing the scanning speed in axion dark matter research. In this letter, we introduce a polygon-shaped resonant cavity with commercial YBCO tapes covering the entire inner wall. We demonstrated that the maximum Q-factor (TM$_{010}$, 6.93 GHz) of the superconducting YBCO cav…
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A high Q-factor microwave resonator in a high magnetic field could be used in a wide range of applications, especially for enhancing the scanning speed in axion dark matter research. In this letter, we introduce a polygon-shaped resonant cavity with commercial YBCO tapes covering the entire inner wall. We demonstrated that the maximum Q-factor (TM$_{010}$, 6.93 GHz) of the superconducting YBCO cavity was about 6 times higher than that of a copper cavity and showed no significant degradation up to 8 T at 4 K. This is the first indication of the possible applications of HTS technology to the research areas requiring low loss in a strong magnetic field at high radio frequencies.
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Submitted 27 April, 2020; v1 submitted 19 February, 2020;
originally announced February 2020.
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Robust energy selective tunneling readout of singlet triplet qubits under large magnetic field gradient
Authors:
Won** Jang,
Jehyun Kim,
Min-Kyun Cho,
Hwanchul Chung,
Sanghyeok Park,
Jaeun Eom,
Vladimir Umansky,
Yunchul Chung,
Dohun Kim
Abstract:
Fast and high-fidelity quantum state detection is essential for building robust spin-based quantum information processing platforms in semiconductors. The Pauli spin blockade (PSB)-based spin-to-charge conversion and its variants are widely used for the spin state discrimination of two-electron singlet-triplet (ST$_0$) qubits; however, the single-shot measurement fidelity is limited by either the…
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Fast and high-fidelity quantum state detection is essential for building robust spin-based quantum information processing platforms in semiconductors. The Pauli spin blockade (PSB)-based spin-to-charge conversion and its variants are widely used for the spin state discrimination of two-electron singlet-triplet (ST$_0$) qubits; however, the single-shot measurement fidelity is limited by either the low signal contrast, or the short lifetime of the triplet state at the PSB energy detuning, especially due to strong mixing with singlet states at large magnetic field gradients. Ultimately, the limited single-shot measurement fidelity leads to low visibility of quantum operations. Here, we demonstrate an alternative method to achieve spin-to-charge conversion of ST$_0$ qubit states using energy selective tunneling between doubly occupied quantum dots (QDs) and electron reservoirs. We demonstrate a single-shot measurement fidelity of 90% and an S-T$_0$ oscillation visibility of 81% at a field gradient of 100 mT (~ 500 $MHz\cdot h \cdot(g^{*}\cdot μ_B)^{-1}$); this allows single-shot readout with full electron charge signal contrast and, at the same time, long and tunable measurement time with negligible effect of relaxation even at strong magnetic field gradients. Using an rf-sensor positioned opposite to the QD array, we apply this method to two ST$_0$ qubits and show high-visibility readout of two individual single-qubit gate operations is possible with a single rf single-electron transistor sensor. We expect our measurement scheme for two-electron spin states can be applied to various hosting materials and provides a simplified and complementary route for multiple qubit state detection with high accuracy in QD-based quantum computing platforms.
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Submitted 29 July, 2020; v1 submitted 4 December, 2019;
originally announced December 2019.
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Hot exciton transport in WSe2 monolayers
Authors:
Darwin F. Cordovilla Leon,
Zidong Li,
Sung Woon Jang,
Parag B. Deotare
Abstract:
We experimentally demonstrate hot exciton transport in h-BN encapsulated WSe2 monolayers via spatially and temporally resolved photoluminescence measurements at room temperature. We show that the nonlinear evolution of the mean squared displacement of the non-resonantly excited hot exciton gas is primarily due to the relaxation of its excess kinetic energy and is characterized by a density-depende…
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We experimentally demonstrate hot exciton transport in h-BN encapsulated WSe2 monolayers via spatially and temporally resolved photoluminescence measurements at room temperature. We show that the nonlinear evolution of the mean squared displacement of the non-resonantly excited hot exciton gas is primarily due to the relaxation of its excess kinetic energy and is characterized by a density-dependent fast expansion that converges to a slower, constant rate expansion. We also observe saturation of the hot exciton gas' expansion rate at high excitation densities due to the balance between Auger-assisted hot exciton generation and the phonon-assisted hot exciton relaxation processes.
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Submitted 14 October, 2019; v1 submitted 20 August, 2019;
originally announced August 2019.
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Fast raster scan multiplexed charge stability measurements toward high-throughput quantum dot array calibration
Authors:
Won** Jang,
Min-Kyun Cho,
Myungwon Lee,
Changki Hong,
Jehyun Kim,
Hwanchul Jung,
Yunchul Chung,
Vladimir Umansky,
Dohun Kim
Abstract:
We report raster scan multiplexed charge-stability diagram measurements for tuning multiple gate-defined quantum dots in GaAs/AlGaAs heterostructures. We evaluate the charge sensitivity of the quantum point contact (QPC) in both radio frequency (rf)-reflectometry and direct current (dc)-transport modes, where we measure the signal-to-noise ratio (SNR) of 40 for rf-QPC with integration time per pix…
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We report raster scan multiplexed charge-stability diagram measurements for tuning multiple gate-defined quantum dots in GaAs/AlGaAs heterostructures. We evaluate the charge sensitivity of the quantum point contact (QPC) in both radio frequency (rf)-reflectometry and direct current (dc)-transport modes, where we measure the signal-to-noise ratio (SNR) of 40 for rf-QPC with integration time per pixel of 10ms , corresponding to 1.14ms for resolving single electron transition in few electron regime. The high SNR for reasonable integration time allows fast two-dimensional (2D) scanning, which we use to facilitate double and triple quantum dot tuning process. We configure highly stable raster scan multiplexed quantum dot tuning platform using a switching matrix and transformer-coupled alternating current (ac) ramp sources with software control. As an example of high-throughput multiple quantum dot tuning, we demonstrate systematic triple quantum dot (TQD) formation using this platform in which a multiplexed combination of 2D scans enables the identification of few electron regime in multiple quantum dots in just a few minutes. The method presented here is general, and we expect that the tuning platform is applicable to more complex multiple quantum dot arrays, allowing efficient quantum dot system Hamiltonian parameter calibration.
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Submitted 1 July, 2019;
originally announced July 2019.
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Maintaining high Q-factor of superconducting YBa$_2$Cu$_3$O$_{7-x}$ microwave cavity in a high magnetic field
Authors:
Danho Ahn,
Ohjoon Kwon,
Woohyun Chung,
Wonjun Jang,
Doyu Lee,
Jhinhwan Lee,
Sung Woo Youn,
Dojun Youm,
Yannis K. Semertzidis
Abstract:
A high Q-factor microwave resonator in a high magnetic field could be of great use in a wide range of fields, from accelerator design to axion dark matter search. The natural choice of material for the superconducting cavity to be placed in a high field is a high temperature superconductor (HTS) with a high critical field. The deposition, however, of a high-quality, grain-aligned HTS film on a thr…
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A high Q-factor microwave resonator in a high magnetic field could be of great use in a wide range of fields, from accelerator design to axion dark matter search. The natural choice of material for the superconducting cavity to be placed in a high field is a high temperature superconductor (HTS) with a high critical field. The deposition, however, of a high-quality, grain-aligned HTS film on a three-dimensional surface is technically challenging. We have fabricated a polygon-shaped resonant cavity with commercial YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) tapes covering the entire inner wall and measured the Q-factor at 4 K at 6.93 GHz as a function of an external DC magnetic field. We demonstrated that the high Q-factor of the superconducting YBCO cavity showed no significant degradation from 1 T up to 8 T. This is the first indication of the possible applications of HTS technology to the research areas requiring a strong magnetic field at high radio frequencies.
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Submitted 10 April, 2019;
originally announced April 2019.
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On the origin and the manipulation of ferromagnetism in Fe$_3$GeTe$_2$: defects and do**s
Authors:
Seung Woo Jang,
Min Yong Jeong,
Hongkee Yoon,
Siheon Ryee,
Myung Joon Han
Abstract:
To understand the magnetic properties of Fe$_3$GeTe$_2$, we performed the detailed first-principles study. Contrary to the conventional wisdom, it is unambiguously shown that Fe$_3$GeTe$_2$ is not ferromagnetic but antiferromagnetic carrying zero net moment in its stoichiometric phase. Fe defect and hole do** are the keys to make this material ferromagnetic, which are shown by the magnetic force…
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To understand the magnetic properties of Fe$_3$GeTe$_2$, we performed the detailed first-principles study. Contrary to the conventional wisdom, it is unambiguously shown that Fe$_3$GeTe$_2$ is not ferromagnetic but antiferromagnetic carrying zero net moment in its stoichiometric phase. Fe defect and hole do** are the keys to make this material ferromagnetic, which are shown by the magnetic force response as well as the total energy calculation with the explicit Fe defects and the varied system charges. Further, we found that the electron do** also induces the antiferro- to ferromagnetic transition. It is a crucial factor to understand the notable recent experiment of gate-controlled ferromagnetism. Our results not only unveil the origin of ferromagnetism of this material but also show how it can be manipulated with defect and do**.
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Submitted 9 April, 2019;
originally announced April 2019.
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Magnetic force theory combined with quasi-particle self-consistent GW method
Authors:
Hongkee Yoon,
Seung Woo Jang,
Jae-Hoon Sim,
Takao Kotani,
Myung Joon Han
Abstract:
We report a successful combination of magnetic force linear response theory with quasiparticle self-consistent GW method. The self-consistently determined wavefunctions and eigenvalues can just be used for the conventional magnetic force calculations. While its formulation is straightforward, this combination provides a way to investigate the effect of GW self-energy on the magnetic interactions w…
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We report a successful combination of magnetic force linear response theory with quasiparticle self-consistent GW method. The self-consistently determined wavefunctions and eigenvalues can just be used for the conventional magnetic force calculations. While its formulation is straightforward, this combination provides a way to investigate the effect of GW self-energy on the magnetic interactions which can hardly be quantified due to the limitation of current GW methodology in calculating the total energy difference in between different magnetic phases. In ferromagnetic $3d$ elements, GW self-energy slightly reduces the $d$ bandwidth and enhances the interactions while the same long-range feature is maintained. In antiferromagnetic transition-metal monoxides, QSGW significantly reduces the interaction strengths by enlarging the gap. Orbital-dependent magnetic force calculations show that the coupling between $e_g$ and the nominally-empty $4s$ orbital is noticeably large in MnO which is reminiscent of the discussion for cuprates regarding the role of Cu-$4s$ state. This combination of magnetic force theory with quasiparticle self-consistent GW can be a useful tool to study various magnetic materials.
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Submitted 21 February, 2019;
originally announced February 2019.
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Microscopic understanding of magnetic interactions in bilayer CrI$_3$
Authors:
Seung Woo Jang,
Min Yong Jeong,
Hongkee Yoon,
Siheon Ryee,
Myung Joon Han
Abstract:
We performed the detailed microscopic analysis of the inter-layer magnetic couplings for bilayer CrI$_3$. As the first step toward understanding the recent experimental observations and utilizing them for device applications, we estimated magnetic force response as well as total energy. Various van der Waals functionals equivocally point to the ferromagnetic ground state for the low-temperature st…
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We performed the detailed microscopic analysis of the inter-layer magnetic couplings for bilayer CrI$_3$. As the first step toward understanding the recent experimental observations and utilizing them for device applications, we estimated magnetic force response as well as total energy. Various van der Waals functionals equivocally point to the ferromagnetic ground state for the low-temperature structured bilayer CrI$_3$ which is further confirmed independently by magnetic force response calculations. The calculated orbital-dependent magnetic forces clearly show that $e_g$-$t_{2g}$ interaction is the key to stabilize this ferromagnetic order. By suppressing this ferromagnetic interaction and enhancing antiferromagnetic orbital channels of $e_g$-$e_g$ and $t_{2g}$-$t_{2g}$, one can realize the desirable antiferromagnetic order. We showed that high-temperature monoclinic stacking can be the case. Our results provide unique information and insight to understand the magnetism of multi-layer CrI$_3$ paving the way to utilize it for applications.
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Submitted 9 April, 2019; v1 submitted 5 September, 2018;
originally announced September 2018.
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Charge density functional plus $U$ theory of LaMnO$_3$: Phase diagram, electronic structure, and magnetic interaction
Authors:
Seung Woo Jang,
Siheon Ryee,
Hongkee Yoon,
Myung Joon Han
Abstract:
We perform charge density functional theory plus $U$ calculation of LaMnO$_3$. While all the previous calculations were based on spin density functionals, our result and analysis show that the use of spin-unpolarized charge-only density is crucial to correctly describe the phase diagram, electronic structure and magnetic property. Using magnetic force linear response calculation, a long-standing i…
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We perform charge density functional theory plus $U$ calculation of LaMnO$_3$. While all the previous calculations were based on spin density functionals, our result and analysis show that the use of spin-unpolarized charge-only density is crucial to correctly describe the phase diagram, electronic structure and magnetic property. Using magnetic force linear response calculation, a long-standing issue is clarified regarding the second neighbor out-of-plane interaction strength. We also estimate the orbital-resolved magnetic couplings. Remarkably, the inter-orbital $e_g$-$t_{2g}$ interaction is quite significant due to the Jahn-Teller distortion and orbital ordering.
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Submitted 1 March, 2018;
originally announced March 2018.
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Reliability and applicability of magnetic force linear response theory: Numerical parameters, predictability, and orbital resolution
Authors:
Hongkee Yoon,
Taek Jung Kim,
Jae-Hoon Sim,
Seung Woo Jang,
Taisuke Ozaki,
Myung Joon Han
Abstract:
We investigated the reliability and applicability of so-called magnetic force linear response method to calculate spin-spin interaction strengths from first-principles. We examined the dependence on the numerical parameters including the number of basis orbitals and their cutoff radii within non-orthogonal LCPAO (linear combination of pseudo-atomic orbitals) formalism. It is shown that the paramet…
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We investigated the reliability and applicability of so-called magnetic force linear response method to calculate spin-spin interaction strengths from first-principles. We examined the dependence on the numerical parameters including the number of basis orbitals and their cutoff radii within non-orthogonal LCPAO (linear combination of pseudo-atomic orbitals) formalism. It is shown that the parameter dependence and the ambiguity caused by these choices are small enough in comparison to the other computation approach and experiments. Further, we tried to pursue the possible extension of this technique to a wider range of applications. We showed that magnetic force theorem can provide the reasonable estimation especially for the case of strongly localized moments even when the ground state configuration is unknown or the total energy value is not accessible. The formalism is extended to carry the orbital resolution from which the matrix form of the magnetic coupling constant is calculated. From the applications to Fe-based superconductors including LaFeAsO, NaFeAs, BaFe$_2$As$_2$ and FeTe, the distinctive characteristics of orbital-resolved interactions are clearly noticed in between single-stripe pnictides and double-stripe chalcogenides.
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Submitted 20 October, 2017;
originally announced October 2017.
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Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor
Authors:
Seokhwan Choi,
Hyoung Joon Choi,
Jong Mok Ok,
Yeonghoon Lee,
Won-Jun Jang,
Alex Taekyung Lee,
Young Kuk,
SungBin Lee,
Andreas J. Heinrich,
Sang-Wook Cheong,
Yunkyu Bang,
Steven Johnston,
Jun Sung Kim,
Jhinhwan Lee
Abstract:
We have explored a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single crystal Sr$_2$VO$_3$FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a non-trivial $C_4$ (2$\times$2) order, not achievable by thermal exci…
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We have explored a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single crystal Sr$_2$VO$_3$FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a non-trivial $C_4$ (2$\times$2) order, not achievable by thermal excitation with unpolarized current. Our tunneling spectroscopy study shows that the induced $C_4$ (2$\times$2) order has characteristics of plaquette antiferromagnetic order in Fe layer and strongly suppressed superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the $C_4$ state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.
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Submitted 14 September, 2017; v1 submitted 4 July, 2017;
originally announced July 2017.
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Correlation of Fe-based Superconductivity and Electron-Phonon Coupling in an FeAs/Oxide Heterostructure
Authors:
Seokhwan Choi,
Steven Johnston,
Won-Jun Jang,
Klaus Koepernik,
Ken Nakatsukasa,
Jong Mok Ok,
Hyun-Jung Lee,
Hyun Woo Choi,
Alex Taekyung Lee,
Alireza Akbari,
Yannis K. Semertzidis,
Yunkyu Bang,
Jun Sung Kim,
Jhinhwan Lee
Abstract:
Interfacial phonons between iron-based superconductors (FeSCs) and perovskite substrates have received considerable attention due to the possibility of enhancing preexisting superconductivity. Using scanning tunneling spectroscopy, we studied the correlation between superconductivity and e-ph interaction with interfacial-phonons in an iron-based superconductor Sr$_2$VO$_3$FeAs ($T_c \approx$ 33 K)…
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Interfacial phonons between iron-based superconductors (FeSCs) and perovskite substrates have received considerable attention due to the possibility of enhancing preexisting superconductivity. Using scanning tunneling spectroscopy, we studied the correlation between superconductivity and e-ph interaction with interfacial-phonons in an iron-based superconductor Sr$_2$VO$_3$FeAs ($T_c \approx$ 33 K) made of alternating FeSC and oxide layers. The quasiparticle interference measurement over regions with systematically different average superconducting gaps due to the e-ph coupling locally modulated by O vacancies in VO$_2$ layer, and supporting self-consistent momentum-dependent Eliashberg calculations provide a unique real-space evidence of the forward-scattering interfacial phonon contribution to the total superconducting pairing.
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Submitted 6 August, 2017; v1 submitted 2 August, 2016;
originally announced August 2016.
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Atomic-scale observation and manipulation of plaquette antiferromagnetic order in iron-based superconductor
Authors:
Seokhwan Choi,
Won-Jun Jang,
Jong Mok Ok,
Hyun Woo Choi,
Hyun-Jung Lee,
Se-Jong Kahng,
Young Kuk,
Ja-Yong Koo,
SungBin Lee,
Sang-Wook Cheong,
Yunkyu Bang,
Jun Sung Kim,
Jhinhwan Lee
Abstract:
The symmetry requirement and the origin of magnetic orders coexisting with superconductivity have been strongly debated issues of iron-based superconductors (FeSCs). Observation of C$_4$-symmetric antiferromagnetism in violation of the inter-band nesting condition of spin-density waves in superconducting ground state will require significant change in our understanding of the mechanism of FeSC. Th…
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The symmetry requirement and the origin of magnetic orders coexisting with superconductivity have been strongly debated issues of iron-based superconductors (FeSCs). Observation of C$_4$-symmetric antiferromagnetism in violation of the inter-band nesting condition of spin-density waves in superconducting ground state will require significant change in our understanding of the mechanism of FeSC. The superconducting material Sr$_2$VO$_3$FeAs, a bulk version of monolayer FeSC in contact with a perovskite layer with its magnetism (T$_N$ ~ 50 K) and superconductivity (T$_c$ ~ 37 K) coexisting at parent state, has no reported structural orthorhombic distortion and thus makes a perfect system to look for theoretically expected C$_4$ magnetisms. Based on variable temperature spin-polarized scanning tunneling microscopy (SPSTM) with newly discovered imaging mechanism that removes the static surface reconstruction (SR) pattern by fluctuating it rapidly with spin-polarized tunneling current, we could visualize underlying C$_4$ symmetric (2$\times$2) magnetic domains and its phase domain walls. We find that this magnetic order is perfectly consistent with the plaquette antiferromagnetic order in tetragonal Fe spin lattice expected from theories based on the Heisenberg exchange interaction of local Fe moments and the quantum order by disorder. The inconsistency of its modulation Q vectors from the nesting condition also implies that the nesting-based C$_2$ symmetric magnetism is not a unique prerequisite of high-T$_c$ FeSC. Furthermore, the plaquette antiferromagnetic domain wall dynamics under the influence of small spin torque effect of spin-polarized tunneling current are shown to be consistent with theoretical simulation based on the extended Landau-Lifshitz-Gilbert equation.
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Submitted 18 June, 2017; v1 submitted 2 August, 2016;
originally announced August 2016.
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Model-mapped RPA for determining the effective Coulomb interaction
Authors:
Hirofumi Sakakibara,
Seung Woo Jang,
Hiori Kino,
Myung Joon Han,
Kazuhiko Kuroki,
Takao Kotani
Abstract:
We present a new method to obtain interaction part of a model Hamiltonian from the result of the first-principles calculation. The effective interaction contained in the model is determined based on the random phase approximation (RPA). In contrast to previous methods such as projected RPA or constrained RPA, the new method takes into account the long-range part of the polarization effect when det…
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We present a new method to obtain interaction part of a model Hamiltonian from the result of the first-principles calculation. The effective interaction contained in the model is determined based on the random phase approximation (RPA). In contrast to previous methods such as projected RPA or constrained RPA, the new method takes into account the long-range part of the polarization effect when determining the interaction in the model. After we discuss problems in previous RPA methods, we will give the formulation of the new method, and show how it works for the single-band Hubbard model of HgBa$_2$CuO$_4$.
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Submitted 20 February, 2017; v1 submitted 28 July, 2016;
originally announced July 2016.
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Direct theoretical evidence for weaker correlations in electron-doped and Hg-based hole-doped cuprates
Authors:
Seung Woo Jang,
Hirofumi Sakakibara,
Hiori Kino,
Takao Kotani,
Kazuhiko Kuroki,
Myung Joon Han
Abstract:
Many important questions for high-$T_c$ cuprates are closely related to the insulating nature of parent compounds. While there has been intensive discussion on this issue, all arguments rely strongly on, or are closely related to, the correlation strength of the materials. Clear understanding has been seriously hampered by the absence of a direct measure of this interaction, traditionally denoted…
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Many important questions for high-$T_c$ cuprates are closely related to the insulating nature of parent compounds. While there has been intensive discussion on this issue, all arguments rely strongly on, or are closely related to, the correlation strength of the materials. Clear understanding has been seriously hampered by the absence of a direct measure of this interaction, traditionally denoted by $U$. Here, we report a first-principles estimation of $U$ for several different types of cuprates. The $U$ values clearly increase as a function of the inverse bond distance between apical oxygen and copper. Our results show that the electron-doped cuprates are less correlated than their hole-doped counterparts, which supports the Slater picture rather than the Mott picture. Further, the $U$ values significantly vary even among the hole-doped families. The correlation strengths of the Hg-cuprates are noticeably weaker than that of La$_2$CuO$_4$. Our results suggest that the strong correlation enough to induce Mott gap may not be a prerequisite for the high-$T_c$ superconductivity.
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Submitted 27 August, 2016; v1 submitted 26 October, 2015;
originally announced October 2015.
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Remarkably low-energy one-dimensional fault line defects in single-layered phosphorene
Authors:
Woosun Jang,
Kisung Kang,
Aloysius Soon
Abstract:
Systematic engineering of atomic-scale low-dimensional defects in two-dimensional nanomaterials is a promising way to modulate the electronic properties of these nanomaterials. Defects at interfaces such as grain boundaries and line defects can often be detrimental to technologically important nanodevice operations and thus a fundamental understanding of how such one-dimensional defects may have a…
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Systematic engineering of atomic-scale low-dimensional defects in two-dimensional nanomaterials is a promising way to modulate the electronic properties of these nanomaterials. Defects at interfaces such as grain boundaries and line defects can often be detrimental to technologically important nanodevice operations and thus a fundamental understanding of how such one-dimensional defects may have an influence on its physio-chemical properties is pivotal to optimizing their device performance. Of late, two-dimensional phosphorene has attracted much attention due to its high carrier mobility and good mechanical flexibility. In this study, using density-functional theory, we investigate the temperature-dependent energetics and electronic structure of a single-layered phosphorene with various fault line defects. We have generated different line defect models based on a fault method, rather than the conventional rotation method. This has allowed us to study and identify new low-energy line defects, and we show how these low-energy line defects could well modulate the electronic band gap energies of single-layered two-dimensional phosphorene -- offering a range of metallic to semiconducting properties in these newly proposed low-energy line defects in phosphorene.
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Submitted 7 October, 2015;
originally announced October 2015.
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Quasiparticle self-consistent GW calculation of Sr$_2$RuO$_4$ and SrRuO$_3$:
Authors:
Hyeonsang Ryee,
Seung Woo Jang,
Hiori Kino,
Takao Kotani,
Myung Joon Han
Abstract:
Using quasiparticle self-consistent $GW$ calculations, we re-examined the electronic structure of Sr$_2$RuO$_4$ and SrRuO$_3$. Our calculations show that the correlation effects beyond the conventional LDA (local density approximation) and GGA (generalized gradient approximation) are reasonably well captured by QS$GW$ self-energy without any {\it ad hoc} parameter or any ambiguity related to the d…
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Using quasiparticle self-consistent $GW$ calculations, we re-examined the electronic structure of Sr$_2$RuO$_4$ and SrRuO$_3$. Our calculations show that the correlation effects beyond the conventional LDA (local density approximation) and GGA (generalized gradient approximation) are reasonably well captured by QS$GW$ self-energy without any {\it ad hoc} parameter or any ambiguity related to the double-counting and the downfolding issues. While the spectral weight transfer to the lower and upper Hubbard band is not observed, the noticeable bandwidth reduction and effective mass enhancement are obtained. Important features in the electronic structures that have been debated over the last decades such as the photoemission spectra at around $-3$ eV in Sr$_2$RuO$_4$ and the half-metallicity for SrRuO$_3$ are discussed in the light of our QS$GW$ results and in comparison with the previous studies. The promising aspects of QS$GW$ are highlighted as the first-principles calculation method to describe the moderately correlated 4$d$ transition metal oxides along with its limitations.
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Submitted 24 January, 2016; v1 submitted 31 July, 2015;
originally announced July 2015.
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Quasiparticle self-consistent GW study of cuprates: electronic structure, model parameters, and the two-band theory for Tc
Authors:
Seung Woo Jang,
Takao Kotani,
Hiori Kino,
Kazuhiko Kuroki,
Myung Joon Han
Abstract:
Despite decades of progress, an understanding of unconventional superconductivity still remains elusive. An important open question is about the material dependence of the superconducting properties. Using the quasiparticle self-consistent GW method, we re-examine the electronic structure of copper oxide high-Tc materials. We show that QSGW captures several important features, distinctive from the…
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Despite decades of progress, an understanding of unconventional superconductivity still remains elusive. An important open question is about the material dependence of the superconducting properties. Using the quasiparticle self-consistent GW method, we re-examine the electronic structure of copper oxide high-Tc materials. We show that QSGW captures several important features, distinctive from the conventional LDA results. The energy level splitting between dx2-y2 and d3z2-r2 is significantly enlarged and the van Hove singularity point is lowered. The calculated results compare better than LDA with recent experimental results from resonant inelastic xray scattering and angle resolved photoemission experiments. This agreement with the experiments supports the previously suggested two-band theory for the material dependence of the superconducting transition temperature, Tc.
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Submitted 1 April, 2015;
originally announced April 2015.
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Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
Authors:
**ho Kim,
Woochool Jang,
**gyu Park,
Heeyoung Jeon,
Hyunjung Kim,
Junhan Yuh,
Hyeongtag Jeon
Abstract:
In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni(iPr-DAD)2, was used as a Ni precursor and ammonia plasma was used as a reactant. This was the first attempt to deposit Ni thin film…
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In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni(iPr-DAD)2, was used as a Ni precursor and ammonia plasma was used as a reactant. This was the first attempt to deposit Ni thin film using Ni(iPr-DAD)2 as a precursor for the ALD process. The RPALD Ni film was deposited with a growth rate of around 2.2Å/cycle at 250 °C and showed significant low resistivity of 33 μΩcm with a total impurity concentration of around 10 at. %.The impurities of the thin film, carbon and nitrogen, were existent by the forms of C-C and C-N in a bonding state. The impurities removal tendency was investigated by comparing of experimental conditions, namely process temperature and pressure. Nitrogen impurity was removed by thermal desorption during each ALD cycle and carbon impurity was reduced by the optimizing of the process pressure which is directly related with a mean free path of NH3 plasma. After Ni deposition, nickel silicide was formed by RTA in a vacuum ambient for 1 minute. A nickel silicide layer from ALD Ni and PVD Ni was compared at the annealing temperature from 500 to 900 °C. NiSi from ALD Ni showed better thermal stability due to the contribution of small amounts of carbon and nitrogen in the asdeposited Ni thin film. Degradation of the silicide layer was effectively suppressed with a use of ALD Ni.
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Submitted 6 August, 2014;
originally announced August 2014.
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Influence of gas ambient on charge writing at the LaAlO3/SrTiO3 heterointerface
Authors:
Haeri Kim,
Seon Young Moon,
Shin-Ik Kim,
Seung-Hyub Baek,
Ho Won Jang,
Dong-Wook Kim
Abstract:
We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The interface carrier density was extracted from the measured sheet resistance and…
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We investigated the influences charge writing on the surface work function and resistance of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments (air, O2, N2, and H2/N2). Charge writing decreased the surface work function and resistance of the LAO/STO sample quite a lot in air but slightly in O2.The interface carrier density was extracted from the measured sheet resistance and compared with that obtained from the proposed charge-writing mechanisms, such as carrier transfer via surface adsorbates and surface redox. Such quantitative analyses suggested that additional processes (e.g., electronic state modification and electrochemical surface reaction) were required to explain charge writing on the LAO/STO interface.
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Submitted 22 February, 2014;
originally announced February 2014.
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Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
Authors:
C. W. Bark,
D. A. Felker,
Y. Wang,
Y. Zhang,
H. W. Jang,
C. M. Folkman,
J. W. Park,
S. H. Baek,
X. Q. Pan,
E. Y. Tsymbal,
M. S. Rzchowski,
C. B. Eom
Abstract:
Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by ep…
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Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.
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Submitted 17 November, 2010;
originally announced November 2010.
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Strong vortex pinning in Co-doped BaFe2As2 single crystal thin films
Authors:
C. Tarantini,
S. Lee,
Y. Zhang,
J. Jiang,
C. W. Bark,
J. D. Weiss,
A. Polyanskii,
C. T. Nelson,
H. W. Jang,
C. M. Folkman,
S. H. Baek,
X. Q. Pan,
A. Gurevich,
E. E. Hellstrom,
C. B. Eom,
D. C. Larbalestier
Abstract:
We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correl…
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We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correlated c-axis pinning, Jc for field along the c-axis exceeds Jc for H//ab plane, inverting the expectation of the Hc2 anisotropy. HRTEM reveals that the strong vortex pinning is due to a high density of nanosize columnar defects.
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Submitted 27 February, 2010;
originally announced March 2010.
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Nanoscale rectification at the LaAlO3/SrTiO3 interface
Authors:
Daniela F. Bogorin,
Chung Wung Bark,
Ho Won Jang,
Cheng Cen,
Chad M. Folkman,
Chang-Beom Eom,
Jeremy Levy
Abstract:
Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical…
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Nanoscale control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to new families of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful for electro-optic applications or in spintronic devices.
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Submitted 10 June, 2010; v1 submitted 18 December, 2009;
originally announced December 2009.
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Plasmonic electromagnetically-induced transparency in symmetric structures
Authors:
Xingri **,
Yuehui Lu,
Haiyu Zheng,
YoungPak Lee,
Joo Yull Rhee,
Won Ho Jang
Abstract:
A broken symmetry is generally believed to be a prerequisite of plasmonic electromagnetically-induced transparency (EIT), since the asymmetry renders the excitation of the otherwise forbidden dark mode possible. Nevertheless, according to the picture of magnetic-plasmon resonance (MPR) mediated plasmonic EIT, we show that the plasmonic EIT can be achieved even in the symmetric structures based o…
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A broken symmetry is generally believed to be a prerequisite of plasmonic electromagnetically-induced transparency (EIT), since the asymmetry renders the excitation of the otherwise forbidden dark mode possible. Nevertheless, according to the picture of magnetic-plasmon resonance (MPR) mediated plasmonic EIT, we show that the plasmonic EIT can be achieved even in the symmetric structures based on the second-order MPR. This sharpens our understanding of the existing concept, but also a profound insight into the plasmonic coherent interference in the near-field zone.
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Submitted 21 November, 2009; v1 submitted 11 November, 2009;
originally announced November 2009.
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Template engineering of Co-doped BaFe2As2 single-crystal thin films
Authors:
S. Lee,
J. Jiang,
C. T. Nelson,
C. W. Bark,
J. D. Weiss,
C. Tarantini,
H. W. Jang,
C. M. Folkman,
S. H. Baek,
A. Polyanskii,
D. Abraimov,
A. Yamamoto,
Y. Zhang,
X. Q. Pan,
E. E. Hellstrom,
D. C. Larbalestier,
C. B. Eom
Abstract:
Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template…
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Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template engineering using single-crystal intermediate layers of (001) SrTiO3 and BaTiO3 grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe2As2 with high transition temperature (zero resistivity Tc of 21.5K), small transition widths (delta Tc = 1.3K), superior Jc of 4.5 MA/cm2 (4.2K, self field) and strong c-axis flux pinning. Implementing SrTiO3 or BaTiO3 templates to match the alkaline earth layer in the Ba-122 with the alkaline earth-oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multi-functional single crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin film overlayers.
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Submitted 1 October, 2009;
originally announced October 2009.
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Weak-link behavior of grain boundaries in superconducting Ba(Fe1-xCox)2As2 bicrystals
Authors:
S. Lee,
J. Jiang,
J. D. Weiss,
C. M. Folkman,
C. W. Bark,
C. Tarantini,
A. Xu,
D. Abraimov,
A. Polyanskii,
C. T. Nelson,
Y. Zhang,
S. H. Baek,
H. W. Jang,
A. Yamamoto,
F. Kametani,
X. Q. Pan,
E. E. Hellstrom,
A. Gurevich,
C. B. Eom,
D. C. Larbalestier
Abstract:
We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cupra…
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We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cuprates and pnictides because of competing orders, low carrier density, and unconventional pairing symmetry.
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Submitted 16 November, 2009; v1 submitted 21 July, 2009;
originally announced July 2009.
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Role of Magnetic Plasmon Resonance in Plasmonic Electromagnetically-Induced Transparency
Authors:
Yuehui Lu,
Hua Xu,
Nguyen Thanh Tung,
Joo Yull Rhee,
Won Ho Jang,
Byoung Seung Ham,
YoungPak Lee
Abstract:
We find that the magnetic plasmon resonance plays a vital role in plasmonic electromagnetically-induced transparency (EIT) proposed by Zhang et al. [\prl \textbf{101}, 047401 (2008)] as well as the localized surface plasmon polaritons. Based on this picture, the plasmonic EIT control through single optical field is suggested in a modified scheme for active plasmonic switching by simply adjusting…
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We find that the magnetic plasmon resonance plays a vital role in plasmonic electromagnetically-induced transparency (EIT) proposed by Zhang et al. [\prl \textbf{101}, 047401 (2008)] as well as the localized surface plasmon polaritons. Based on this picture, the plasmonic EIT control through single optical field is suggested in a modified scheme for active plasmonic switching by simply adjusting the incident angle of the optical field. The tunability of plasmonic EIT in this scheme is exhibited sufficiently.
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Submitted 27 July, 2009; v1 submitted 22 June, 2009;
originally announced June 2009.
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Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale
Authors:
A. Gruverman,
D. Wu,
H. Lu,
Y. Wang,
H. W. Jang,
C. M. Folkman,
M. Ye. Zhuravlev,
D. Felker,
M. Rzchowski,
C. -B. Eom,
E. Y. Tsymbal
Abstract:
Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect usin…
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Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization reversal in a ferroelectric barrier changes the tunneling current across the junction. Here, we demonstrate the reproducible tunneling electroresistance effect using a combination of Piezoresponse Force Microscopy (PFM) and Conducting Atomic Force Microscopy (C-AFM) techniques on nanometer-thick epitaxial BaTiO3 single crystal thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by the direct nanoscale visualization and control of polarization and tunneling current in BaTiO3 films. The obtained results show a change in resistance by about two orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions in non-volatile memory and logic devices, not involving charge as a state variable.
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Submitted 8 June, 2009;
originally announced June 2009.
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Ripple Texturing of Suspended Graphene Atomic Membranes
Authors:
Wenzhong Bao,
Feng Miao,
Zhen Chen,
Hang Zhang,
Wanyoung Jang,
Chris Dames,
Chun Ning Lau
Abstract:
Graphene is the nature's thinnest elastic membrane, with exceptional mechanical and electrical properties. We report the direct observation and creation of one-dimensional (1D) and 2D periodic ripples in suspended graphene sheets, using spontaneously and thermally induced longitudinal strains on patterned substrates, with control over their orientations and wavelengths. We also provide the first…
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Graphene is the nature's thinnest elastic membrane, with exceptional mechanical and electrical properties. We report the direct observation and creation of one-dimensional (1D) and 2D periodic ripples in suspended graphene sheets, using spontaneously and thermally induced longitudinal strains on patterned substrates, with control over their orientations and wavelengths. We also provide the first measurement of graphene's thermal expansion coefficient, which is anomalously large and negative, ~ -7x10^-6 K^-1 at 300K. Our work enables novel strain-based engineering of graphene devices.
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Submitted 2 March, 2009;
originally announced March 2009.
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Experimental Study of Bifurcations in A Parametrically Forced Pendulum
Authors:
Sang-Yoon Kim,
S. H. Shin,
J. Yi,
J. W. Jang
Abstract:
An experimental study of bifurcations associated with stability of stationary points (SP's) in a parametrically forced magnetic pendulum and a comparison of its results with numerical results are presented. The critical values for which the SP's lose or gain their stability are experimentally measured by varying the two parameters $Ω$ (the normalized natural frequency) and $A$ (the normalized dr…
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An experimental study of bifurcations associated with stability of stationary points (SP's) in a parametrically forced magnetic pendulum and a comparison of its results with numerical results are presented. The critical values for which the SP's lose or gain their stability are experimentally measured by varying the two parameters $Ω$ (the normalized natural frequency) and $A$ (the normalized driving amplitude). It is observed that, when the amplitude $A$ exceeds a critical value, the normal SP with $θ=0$ ($θ$ is the angle between the permanent magnet and the magnetic field) becomes unstable either by a period-doubling bifurcation or by a symmetry-breaking pitchfork bifurcation, depending on the values of $Ω$. However, in contrast with the normal SP the inverted SP with $θ=π$ is observed to become stable as $A$ is increased above a critical value by a pitchfork bifurcation, but it also destabilizes for a higher critical value of $A$ by a period-doubling bifurcation. All of these experimental results agree well with numerical results obtained using the Floquet theory.
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Submitted 23 July, 1997;
originally announced July 1997.