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High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit
Authors:
A. R. Mills,
C. R. Guinn,
M. M. Feldman,
A. J. Sigillito,
M. J. Gullans,
M. Rakher,
J. Kerckhoff,
C. A. C. Jackson,
J. R. Petta
Abstract:
Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibil…
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Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibilities >99%, exceeding the threshold for quantum error correction. In the same device, we achieve average single qubit control fidelities >99.95%. Our results show that silicon spin qubits can be operated with high overall operation fidelity.
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Submitted 20 April, 2022;
originally announced April 2022.
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Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
Authors:
F. Borjans,
X. Zhang,
X. Mi,
G. Cheng,
N. Yao,
C. A. C. Jackson,
L. F. Edge,
J. R. Petta
Abstract:
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive…
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Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive to atomic-scale disorder. Large valley splittings are desirable to have a well-defined spin qubit. In addition, an understanding of the inter-valley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy level diagram may affect the fidelity of charge and spin transfer protocols in silicon quantum dot arrays. Here we use microwave spectroscopy to probe spatial variations in the valley splitting, and the intra- and inter-valley tunnel couplings ($t_{ij}$ and $t'_{ij}$) that couple dots $i$ and $j$ in a triple quantum dot (TQD). We uncover large spatial variations in the ratio of inter-valley to intra-valley tunnel couplings $t_{12}'/t_{12}=0.90$ and $t_{23}'/t_{23}=0.56$. By tuning the interdot tunnel barrier we also show that $t'_{ij}$ scales linearly with $t_{ij}$, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well.
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Submitted 29 January, 2021;
originally announced January 2021.
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Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
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Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
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Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
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Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits
Authors:
J. Kerckhoff,
B. Sun,
B. H. Fong,
C. Jones,
A. A. Kiselev,
D. W. Barnes,
R. S. Noah,
E. Acuna,
M. Akmal,
S. D. Ha,
J. A. Wright,
B. J. Thomas,
C. A. C. Jackson,
L. F. Edge,
K. Eng,
R. S. Ross,
T. D. Ladd
Abstract:
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width…
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We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.
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Submitted 17 September, 2020;
originally announced September 2020.
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Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics
Authors:
F. Borjans,
X. Croot,
S. Putz,
X. Mi,
S. M. Quinn,
A. Pan,
J. Kerckhoff,
E. J. Pritchett,
C. A. Jackson,
L. F. Edge,
R. S. Ross,
T. D. Ladd,
M. G. Borselli,
M. F. Gyure,
J. R. Petta
Abstract:
Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate…
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Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.
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Submitted 2 March, 2020;
originally announced March 2020.
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Dichotomy of the transport coefficients of correlated electron liquids in SrTiO3
Authors:
Tyler A. Cain,
Evgeny Mikheev,
Clayton A. Jackson,
Susanne Stemmer
Abstract:
We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coeffic…
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We discuss the Seebeck coefficient and the Hall mobility of electrons confined in narrow SrTiO3 quantum wells as a function of the three-dimensional carrier density and temperature. The quantum wells contain a fixed sheet carrier density of ~ 7x10^14 cm^-2 and their thickness is varied. At high temperatures, both properties exhibit apparent Fermi liquid behavior. In particular, the Seebeck coefficient increases nearly linearly with temperature (T) when phonon drag contributions are minimized, while the mobility decreases proportional to T^2. Furthermore, the Seebeck coefficient scales inversely with the Fermi energy (decreasing quantum well thickness). In contrast, the transport scattering rate is independent of the Fermi energy, which is inconsistent with a Fermi liquid. At low temperatures, the Seebeck coefficient deviates from the linear temperature dependence for those electron liquids that exhibit a correlation-induced pseudogap, indicating a change in the energy dependence of the scattering rate. The implications for describing transport in strongly correlated materials are discussed.
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Submitted 14 September, 2016;
originally announced September 2016.
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Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO3 quantum wells
Authors:
Jack Y. Zhang,
Clayton A. Jackson,
Ru Chen,
Santosh Raghavan,
Pouya Moetakef,
Leon Balents,
Susanne Stemmer
Abstract:
The electrical and structural characteristics of SmTiO3/SrTiO3/SmTiO3 and GdTiO3/SrTiO3/GdTiO3 heterostructures are compared. Both types of structures contain narrow SrTiO3 quantum wells, which accommodate a confined, high-density electron gas. As shown previously [Phys. Rev. B 86, 201102(R) (2012)] SrTiO3 quantum wells embedded in GdTiO3 show a metal-to-insulator transition when their thickness i…
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The electrical and structural characteristics of SmTiO3/SrTiO3/SmTiO3 and GdTiO3/SrTiO3/GdTiO3 heterostructures are compared. Both types of structures contain narrow SrTiO3 quantum wells, which accommodate a confined, high-density electron gas. As shown previously [Phys. Rev. B 86, 201102(R) (2012)] SrTiO3 quantum wells embedded in GdTiO3 show a metal-to-insulator transition when their thickness is reduced so that they contain only two SrO layers. In contrast, quantum wells embedded in SmTiO3 remain metallic down to a single SrO layer thickness. Symmetry-lowering structural distortions, measured by quantifying the Sr-column displacements, are present in the insulating quantum wells, but are either absent or very weak in all metallic quantum wells, independent of whether they are embedded in SmTiO3 or in GdTiO3. We discuss the role of orthorhombic distortions, orbital ordering, and strong electron correlations in the transition to the insulating state.
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Submitted 15 February, 2014;
originally announced February 2014.
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Interface-induced magnetism in perovskite quantum wells
Authors:
Clayton A. Jackson,
Susanne Stemmer
Abstract:
We investigate the angular dependence of the magnetoresistance of thin (< 1 nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating, ferrimagnetic GdTiO3 and insulating, antiferromagnetic SmTiO3, respectively. The SrTiO3 quantum wells contain a high density of mobile electrons (~7x10^14 cm^-2). We show that the longitudinal and transverse magnetoresistance in the structures with GdTi…
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We investigate the angular dependence of the magnetoresistance of thin (< 1 nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating, ferrimagnetic GdTiO3 and insulating, antiferromagnetic SmTiO3, respectively. The SrTiO3 quantum wells contain a high density of mobile electrons (~7x10^14 cm^-2). We show that the longitudinal and transverse magnetoresistance in the structures with GdTiO3 are consistent with anisotropic magnetoresistance, and thus indicative of induced ferromagnetism in the SrTiO3, rather than a nonequilibrium proximity effect. Comparison with the structures with antiferromagnetic SmTiO3 shows that the properties of thin SrTiO3 quantum wells can be tuned to obtain magnetic states that do not exist in the bulk material.
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Submitted 2 November, 2013;
originally announced November 2013.
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Magnetism and local structure in low-dimensional, Mott insulating GdTiO3
Authors:
Jack Y. Zhang,
Clayton A. Jackson,
Santosh Raghavan,
**woo Hwang,
Susanne Stemmer
Abstract:
Cation displacements, oxygen octahedral tilts, and magnetism of epitaxial, ferrimagnetic, insulating GdTiO3 films sandwiched between cubic SrTiO3 layers are studied using scanning transmission electron microscopy and magnetization measurements. With decreasing GdTiO3 film thickness, structural (GdFeO3-type) distortions are reduced, concomitant with a reduction in the Curie temperature. Ferromagnet…
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Cation displacements, oxygen octahedral tilts, and magnetism of epitaxial, ferrimagnetic, insulating GdTiO3 films sandwiched between cubic SrTiO3 layers are studied using scanning transmission electron microscopy and magnetization measurements. With decreasing GdTiO3 film thickness, structural (GdFeO3-type) distortions are reduced, concomitant with a reduction in the Curie temperature. Ferromagnetism persists to smaller deviations from the cubic perovskite structure than is the case for the bulk rare earth titanates. The results indicate that the FM ground state is controlled by the narrow bandwidth, exchange and orbital ordering, and only to second order depends on amount of the GdFeO3-type distortion.
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Submitted 5 September, 2013;
originally announced September 2013.
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Toward an artificial Mott insulator: Correlations in confined, high-density electron liquids in SrTiO3
Authors:
Pouya Moetakef,
Clayton A. Jackson,
**woo Hwang,
Leon Balents,
S. James Allen,
Susanne Stemmer
Abstract:
We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D) carrier density is modulated by changing the width of the quantum well. It is shown that even at 3D densities well below one electron per site, short-range Coulomb…
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We investigate correlation physics in high-density, two-dimensional electron liquids that reside in narrow SrTiO3 quantum wells. The quantum wells are remotely doped via an interfacial polar discontinuity and the three-dimensional (3D) carrier density is modulated by changing the width of the quantum well. It is shown that even at 3D densities well below one electron per site, short-range Coulomb interactions become apparent in transport, and an insulating state emerges at a critical density. We also discuss the role of disorder in the insulating state.
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Submitted 28 October, 2012;
originally announced October 2012.
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Modulation do** to control the high-density electron gas at a polar/non-polar oxide interface
Authors:
Tyler A. Cain,
Pouya Moetakef,
Clayton A. Jackson,
Susanne Stemmer
Abstract:
A modulation-do** approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface can be reduced by up to 20% from its maximum value (~ 3x10^14 cm^-2) by alloying the GdTiO3 layer with Sr. The Seebeck coefficient of the two-dimensional electr…
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A modulation-do** approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface can be reduced by up to 20% from its maximum value (~ 3x10^14 cm^-2) by alloying the GdTiO3 layer with Sr. The Seebeck coefficient of the two-dimensional electron gas increases concurrently with the decrease in its carrier density. The experimental results provide insight into the origin of charge carriers at oxide interfaces exhibiting a polar discontinuity.
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Submitted 28 August, 2012;
originally announced August 2012.
