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Self-stacked 1$\mathrm{T}$-1$\mathrm{H}$ layers in 6$\mathrm{R}$-NbSeTe and the emergence of charge and magnetic correlations due to ligand disorder
Authors:
S. K. Mahatha,
J. Phillips,
J. Corral-Sertal,
D. Subires,
A. Korshsunov,
A. Kar,
J. Buck,
F. Diekmann,
Y. P. Ivanov,
A. Chuvilin,
D. Mondal,
I. Vobornik,
A. Bosak,
K. Rossnagel,
V. Pardo,
Adolfo O. Fumega,
S. Blanco-Canosa
Abstract:
The emergence of correlated phenomena arising from the combination of 1$\mathrm{T}$ and 1$\mathrm{H}$ van der Waals layers is the focus of intense research. Here, we synthesize a novel self-stacked 6$\mathrm{R}$ phase in NbSeTe, showing a perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle resolved photoem…
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The emergence of correlated phenomena arising from the combination of 1$\mathrm{T}$ and 1$\mathrm{H}$ van der Waals layers is the focus of intense research. Here, we synthesize a novel self-stacked 6$\mathrm{R}$ phase in NbSeTe, showing a perfect alternating 1T and 1H layers that grow coherently along the c-direction, as revealed by scanning transmission electron microscopy. Angle resolved photoemission spectroscopy shows a mixed contribution of the trigonal and octahedral Nb bands to the Fermi level. Diffuse scattering reveals temperature-independent short-range charge fluctuations with propagation vector $\mathrm{q_{CO}}$=(0.25,0), derived from the condensation of a longitudinal mode in the 1T layer. We observe that ligand disorder quenches the formation of a charge density wave. Magnetization measurements suggest the presence of an inhomogeneous, short-range magnetic order, further supported by the absence of a clear phase transition in the specific heat. These experimental analyses in combination with \textit{ab initio} calculations indicate that the ground state of 6$\mathrm{R}$-NbSeTe is described by a statistical distribution of short-range charge-modulated and spin-correlated regions driven by ligand disorder. Our results devise a route to synthesize 1$\mathrm{T}$-1$\mathrm{H}$ self-stacked bulk heterostructures to study emergent phases of matter.
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Submitted 12 February, 2024;
originally announced February 2024.
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Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
Authors:
Leon Ruf,
Tosson Elalaily,
Claudio Puglia,
Yurii P. Ivanov,
Francois Joint,
Martin Berke,
Andrea Iorio,
Peter Makk,
Giorgio De Simoni,
Simone Gasparinetti,
Giorgio Divitini,
Szabolcs Csonka,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronic…
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The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.
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Submitted 7 December, 2023; v1 submitted 14 April, 2023;
originally announced April 2023.
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Micromagnetic modelling of magnetic domain walls and domains in cylindrical nanowires
Authors:
J. A. Fernandez-Roldan,
Yu. P. Ivanov,
O. Chubykalo-Fesenko
Abstract:
Magnetic cylindrical nanowires are very fascinating objects where the curved geometry allows many novel magnetic effects and a variety of non-trivial magnetic structures. Micromagnetic modelling plays an important role in revealing the magnetization distribution in magnetic nanowires, often not accessible by imaging methods with sufficient details. Here we review the magnetic properties of the sha…
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Magnetic cylindrical nanowires are very fascinating objects where the curved geometry allows many novel magnetic effects and a variety of non-trivial magnetic structures. Micromagnetic modelling plays an important role in revealing the magnetization distribution in magnetic nanowires, often not accessible by imaging methods with sufficient details. Here we review the magnetic properties of the shape anisotropy-dominated nanowires and the nanowires with competing shape and magnetocrystalline anisotropies, as revealed by micromagnetic modelling. We discuss the variety of magnetic walls and magnetic domains reported by micromagnetic simulations in cylindrical nanowires. The most known domain walls types are the transverse and vortex (Bloch point) domain walls and the transition between them is materials and nanowire diameter dependent. Importantly, the field or current-driven domain walls in cylindrical nanowires can achieve very high velocities. In recent simulations of nanowires with larger diameter the skyrmion tubes are also reported. In nanowires with large saturation magnetization the core of these tubes may form a helicoidal ('corkscrew') structure. The topology of the skyrmion tubes play an important role in the pinning mechanism, discussed here on the example of FeCo modulated nanowires. Other discussed examples include the influence of antinotches ('bamboo' nanowires) on the remanent magnetization configurations for hcp Co and FeCo nanowires and Co-Ni multisegmented nanowires.
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Submitted 4 July, 2019;
originally announced July 2019.
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Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Authors:
Hanan Mohammed,
Hector Corte-León,
Yurii P. Ivanov,
Sergei Lopatin,
Julian A. Moreno,
Andrey Chuvilin,
Akshaykumar Salimath,
Aurelien Manchon,
Olga Kazakova,
Jurgen Kosel
Abstract:
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domai…
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A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
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Submitted 18 April, 2018;
originally announced April 2018.
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High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments
Authors:
Selma. Amara,
Gallo. A. Torres Sevilla,
Mayyada. Hawsawi,
Yousof. Mashraei,
Hanan . Mohammed,
Melvin E. Cruz,
Yurii. P. Ivanov,
Samridh. Jaiswal,
Gerhard. Jakob,
Mathias. Kläui,
Muhammad. Hussain,
Jurgen. Kosel
Abstract:
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this prog…
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Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this progress. For many high-performance applications, magnetic tunnel junctions (MTJs) have become the first choice, due to their high sensitivity, low power consumption etc. MTJs are also promising candidates for non-volatile next-generation data storage media and, hence, could become central components of wearable electronic devices. In this work, a generic low-cost regenerative batch fabrication process is utilized to transform rigid MTJs on a 500 μm silicon wafer substrate into 5 μm thin, mechanically flexible silicon devices, and ensuring optimal utilization of the whole substrate. This method maintains the outstanding magnetic properties, which are only obtained by deposition of the MTJ on smooth high-quality silicon wafers. The flexible MTJs are highly reliable and resistive to mechanical stress. Bending of the MTJ stacks with a diameter as small as 500 μm is possible without compromising their performance and an endurance of over 1000 cycles without fatigue has been demonstrated. The flexible MTJs were mounted onto the tip of a cardiac catheter with 2 mm in diameter without compromising their performance. This enables the detection of magnetic fields and the angle which they are applied at with a high sensitivity of 4.93 %/Oe and a low power consumption of 0.15 μW, while adding only 8 μg and 15 μm to the weight and diameter of the catheter, respectively.
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Submitted 4 April, 2018;
originally announced April 2018.
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Magnon mode selective spin transport in compensated ferrimagnets
Authors:
Joel Cramer,
Er-Jia Guo,
Stephan Geprägs,
Andreas Kehlberger,
Yurii P. Ivanov,
Kathrin Ganzhorn,
Francesco Della Coletta,
Matthias Althammer,
Hans Huebl,
Rudolf Gross,
Jürgen Kosel,
Mathias Kläui,
Sebastian T. B. Goennenwein
Abstract:
We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a non-monotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of t…
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We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a non-monotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semi-quantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.
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Submitted 10 March, 2017; v1 submitted 9 March, 2017;
originally announced March 2017.
