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Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
Authors:
A. P. Morozov,
L. O. Luchnikov,
S. Yu. Yurchuk,
A. R. Ishteev,
P. A. Gostishchev,
S. I. Didenko,
N. S. Saratovsky,
S. S. Kozlov,
D. S. Muratov,
Yu. N. Luponosov,
D. S. Saranin
Abstract:
Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele…
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Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trap** processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures.
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Submitted 3 July, 2024;
originally announced July 2024.
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Single-step Chemical Vapor Deposition of Methyl Ammonium Lead Halide Perovskite for p-i-n Solar Cells
Authors:
Dmitry S. Muratov,
Lev Luchnikov,
Danila Saranin,
Artur Ishteev,
Vladislav Kurichenko,
Evgeniy Kolesnikov,
Denis V. Kuznetsov,
Aldo Di Carlo
Abstract:
Metal halide perovskite solar cells being one of the fastest emerging technologies for renewable energy still has to become more industry friendly in a way that will allow using it for thin film modules or tandems with conventional silicon devices. The simplest way to achieve this is to use chemical vapor deposition (CVD) technique for tandem production. In this work, we show a method for a single…
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Metal halide perovskite solar cells being one of the fastest emerging technologies for renewable energy still has to become more industry friendly in a way that will allow using it for thin film modules or tandems with conventional silicon devices. The simplest way to achieve this is to use chemical vapor deposition (CVD) technique for tandem production. In this work, we show a method for a single step production of MAPbI3 films in a simple two-zone CVD reactor from lead diacetate and methyl-ammonium iodide powders. Obtained films show highly ordered cubic MAPbI3 phase with a thickness of 400-500 um, good photoluminescence response and absorption band edge similar to spin-coated film. We used those films to produce p-i-n solar cells with ITO/NiO/MAPbI3/C60/Cu structure. The best cell showed negligible 0.23 % PCE right after the manufacturing but significantly improved to 5.5 % PCE after 8 hours of storage in the dark. The main limiting factor affecting the efficiency is low current density, which we attribute to non-optimized growth conditions; however, our approach is a first step to a single step CVD deposition of MAPbI3 on any type of substrates including texturized silicon subcells for better overall efficiency.
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Submitted 11 December, 2023;
originally announced December 2023.
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MAPbBr3 monocrystals under electron beam radiolysis and degradation revealed by cathodoluminescence spectroscopy
Authors:
Yu. O. Kulanchikov,
P. S. Vergeles,
K. Konstantinova,
A. R. Ishteev,
D. S. Muratov,
E. E. Yakimov,
E. B. Yakimov,
D. S. Saranin
Abstract:
Study of the local optical properties using electron beam (e-beam) can provide a valuable information concerning the inspection of the materials quality, the presence of the different phase inclusions and defects. Halide perovskites have been shown to be highly sensitive to external stress conditions like ambient atmosphere, light, and heat. In this paper, the cathodoluminescence (CL) spectroscopy…
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Study of the local optical properties using electron beam (e-beam) can provide a valuable information concerning the inspection of the materials quality, the presence of the different phase inclusions and defects. Halide perovskites have been shown to be highly sensitive to external stress conditions like ambient atmosphere, light, and heat. In this paper, the cathodoluminescence (CL) spectroscopy has been exploited to carry out the investigation of CH3NH3PbBr3 monocrystals under low energy electron beam irradiation. The CL spectra exhibited strong transformation with the increase of the irradiation dose and significant shifts of the peak maximums from 2.23 eV to >2.5 eV. Utilizing a larger e-beam energy (>20 keV) was found to be preferable to slow down the dynamics of the decomposition and corrosion. The mechanisms of the changes in MAPbBr3 properties after e-beam exposure and correlation to the in-depth distribution of deposited energy were discussed.
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Submitted 11 May, 2023;
originally announced May 2023.
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Silver Nanowires on Carbon Nanotube Aerogel Sheets for Flexible, Transparent Electrodes
Authors:
Patricia M. Martinez,
Arthur Ishteev,
Josef Velten,
Azin Fahimi,
Izabela Jurewicz,
Alan B. Dalton,
Ray H. Baughman,
Anvar A. Zakhidov
Abstract:
Flexible, free-standing transparent conducting electrodes (TCEs) with simultaneously tunable transmittances up to 98% and sheet resistances down to 11 Ω/sq were prepared by a facile spray-coating method of silver nanowires (AgNWs) onto dry-spun multiwall carbon nanotube (MWNT) aerogels. Counterintuitively, the transmittance of the hybrid electrodes can be increased as the mass density of AgNWs wit…
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Flexible, free-standing transparent conducting electrodes (TCEs) with simultaneously tunable transmittances up to 98% and sheet resistances down to 11 Ω/sq were prepared by a facile spray-coating method of silver nanowires (AgNWs) onto dry-spun multiwall carbon nanotube (MWNT) aerogels. Counterintuitively, the transmittance of the hybrid electrodes can be increased as the mass density of AgNWs within the MWNT aerogels increase, however, the final achievable transmittance depends on the initial transparency of the MWNT aerogels. At the same time, a strong decrease in sheet resistance is obtained when AgNWs form a percolated network along the MWNT aerogel. Additionally, anisotropic reduction in sheet resistance and polarized transmittance of AgNWs/MWNTs aerogel is achieved with this method. The final AgNWs/MWNTs hybrid TCEs transmittance and sheet resistance can be fine-tuned by spray-coating mechanisms or by the choice of initial MWNT aerogel density. Thus, a wide range of AgNWs/MWNTs hybrid TCEs with optimized optoelectronic properties can be achieved depending of the requirements needed. Finally, the free-standing AgNWs/MWNTs hybrid TCEs can be laminated onto a wide range of substrates without the need of a bonding aid.
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Submitted 18 January, 2019;
originally announced January 2019.