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Enhanced Electron Extraction in Co-Doped TiO2 Quantified by Drift-Diffusion Simulation for Stable CsPbI3 Solar Cells
Authors:
Thomas W. Gries,
Davide Regaldo,
Hans Koebler,
Titan Noor Hartono Putri,
Gennaro V. Sannino,
Emilio Gutierrez Partida,
Roberto Felix,
Elif Huesam,
Ahmed Saleh,
Regan G. Wilks,
Zafar Iqbal,
Zahra Loghman Nia,
Florian Ruske,
Martin Stolterfoht,
Dieter Neher,
Marcus Baer,
Stefan A. Weber,
Paola Delli Veneri,
Philip Schulz,
Jean-Baptiste Puel,
Jean-Paul Kleider,
Qiong Wang,
Eva Unger,
Artem Musiienko,
Antonio Abate
Abstract:
Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic prop…
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Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable operation, however, it is crucial to thoroughly understand the extractive and recombinative processes occurring at the interfaces of perovskite and the charge-selective layers. In this study, we focus on the electronic properties of (doped) TiO2 as an electron-selective contact. We show via KPFM that co-do** of TiO2 with Nb(V) and Sn(IV) reduces the materials work function by 270 meV, giving it stronger n-type characteristics compared to Nb(V) mono-doped TiO2. The altered electronic alignment with CsPbI3 translates to enhanced electron extraction, as demonstrated with ssPL, trPL and trSPV in triad. Importantly, we extract crucial parameters, such as the concentration of extracted electrons and the interface hole recombination velocity, from the SPV transients via 2D drift-diffusion simulations. When implementing the co-doped TiO2 into full n-i-p solar cells, the operational stability is enhanced to 32000 h of projected TS80 lifetime. This study provides fundamental understanding of interfacial charge extraction and its correlation with operational stability of perovskite solar cells, which can be transferred to other charge-selective contacts.
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Submitted 24 April, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Photovoltaic potential of tin perovskites revealed through layer-by-layer investigation of optoelectronic and charge transport properties
Authors:
Mahmoud H. Aldamasy,
Artem Musiienko,
Marin Rusu,
Davide Regaldo,
Shengnan Zho,
Hannes Hampel,
Chiara Frasca,
Zafar Iqbal,
Thomas W. Gries,
Guixiang Li,
Ece Aktas,
Giuseppe Nasti,
Meng Li,
Jorge Pascual,
Noor Titan Putri Hartono,
Qiong Wang,
Thomas Unold,
Antonio Abate
Abstract:
Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells is incomparable to lead perovskites for several reasons, including energy band mismatch between the perovskite absorber film and the charge transporting layers…
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Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells is incomparable to lead perovskites for several reasons, including energy band mismatch between the perovskite absorber film and the charge transporting layers (CTLs) for both types of carriers, i.e., for electrons (ETLs) and holes (HTLs). However, the band diagrams in the literature are inconsistent, and the charge extraction dynamics are poorly understood. In this paper, we study the energy band positions of FASnI3 based perovskites using Kelvin probe (KP) and photoelectron yield spectroscopy (PYS) to provide a precise band diagram of the most used device stack. In addition, we analyze the defects within the current energetic landscape of tin perovskites. We uncover the role of bathocuproine (BCP) in enhancing the electron extraction at the fullerene C60/BCP interface. Furthermore, we used transient surface photovoltage (tr-SPV) for the first time for tin perovskites to understand the charge extraction dynamics of the most reported HTLs such as NiOx and PEDOT, and ETLs such as C60, ICBA, and PCBM. Finally, we used Hall effect, KP, and time-resolved photoluminescence (TRPL) to estimate an accurate value of the p-do** concentration in FASnI3 and showed a consistent result of 1.5 * 1017 cm-3. Our findings prove that the energetic system of tin halide perovskites is deformed and should be redesigned independently from lead perovskites to unlock the full potential of tin perovskites.
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Submitted 7 October, 2023; v1 submitted 11 September, 2023;
originally announced September 2023.
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Interface Modification for Energy Levels Alignment and Charge Extraction in CsPbI$_3$ Perovskite Solar Cells
Authors:
Zafar Iqbal,
Fengshuo Zu,
Artem Musiienko,
Emilio Gutierrez Partida,
Hans Kobler,
Thomas W. Gries,
Gennaro V. Sannino,
Laura Canil,
Norbert Koch,
Martin Stolterfoht,
Dieter Neher,
Michele Pavone,
Ana Belen Munoz-Garcia,
Antonio Abate,
Qiong Wang
Abstract:
In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a pas…
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In perovskite solar cells (PSCs) energy levels alignment and charge extraction at the interfaces are the essential factors directly affecting the device performance. In this work, we present a modified interface between all-inorganic CsPbI$_3$ perovskite and its hole selective contact (Spiro-OMeTAD), realized by a dipole molecule trioctylphosphine oxide (TOPO), to align the energy levels. On a passivated perovskite film, by n-Octyl ammonium Iodide (OAI), we created an upward surface band-bending at the interface by TOPO treatment. This improved interface by the dipole molecule induces a better energy level alignment and enhances the charge extraction of holes from the perovskite layer to the hole transport material. Consequently, a Voc of 1.2 V and high-power conversion efficiency (PCE) of over 19% were achieved for inorganic CsPbI$_3$ perovskite solar cells. Further, to demonstrate the effect of the TOPO dipole molecule, we present a layer-by-layer charge extraction study by transient surface photovoltage technique (trSPV) accomplished by charge transport simulation.
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Submitted 24 July, 2023;
originally announced July 2023.
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Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2
Authors:
Sikandar Aftab,
Muhammad Arslan Shehzad,
Muhammad Salman Ajmal,
Fahmid Kabir,
Muhammad Zahir Iqbal
Abstract:
In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional material (2D), MoT…
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In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional material (2D), MoTe2, caused by phase transition and broken inversion symmetry in MoTe2. The phase transition from single-crystalline semiconducting 2H-MoTe2 to semi-metallic 1T-MoTe2 was confirmed using X-ray photoelectron spectroscopy (XPS). We used a micrometer-scale system to measure the absorption of energy, which reduced from 800 meV to 63 meV when phase transformation from hexagonal to distorted octahedral and revealed a smaller bandgap semi-metallic behavior. Experimentally, a large bulk photovoltaic response is anticipated with the maximum photovoltage VOC = 16 mV and a positive signal of the ISC = 60 uA (400 nm, 90.4 Wcm-2) in the absence of an external electric field. The maximum values of both R and EQE were found to be 98 mAW-1 and 30 %, respectively. Our findings unveil distinctive features of the photocurrent responses caused by in-plane polarity and its potential from a wide pool of established TMD-based nanomaterials, and a novel approach to reach high efficiency in converting photons-to-electricity for power harvesting optoelectronics devices.
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Submitted 17 April, 2023;
originally announced April 2023.
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Platinum Disulfide (PtS2) and Silicon Pyramids: Efficient 2D/3D Heterojunctions Tunneling and Breakdown Diodes
Authors:
Sikandar Aftab,
Ms. Samiya,
Muhammad Waqas Iqbal,
Fahmid Kabir,
Muhammad Zahir Iqbal,
M. Arslan Shehzad
Abstract:
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare PtS2 pyramids Si p-n junctions for an investigation of the tunneling and breakdown diodes. the demonstrated p-n diode exhibited a high rectifying performance reach…
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The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare PtS2 pyramids Si p-n junctions for an investigation of the tunneling and breakdown diodes. the demonstrated p-n diode exhibited a high rectifying performance reaching a rectification ration (If/Ir) to 7.2 *10^4 at zero gate bias with an ideality factor of 1.5. The zener tunneling was observed at a low reverse bias region of breakdown voltage (from -6 to -1V) at various temperatures (50 to 300K) and it was a negative coefficient of temperature. Conversely, for the greater breakdown voltage regime (-15 to -11 V), the breakdown voltage increased with the increased temperature (150 to 300 K), indicating a positive coefficient of temperature. Therefore, this phenomenon was attributed to the avalanche breakdown. The p-n junctions displayed photovoltaic characteristics under the illumination of visible light (500 nm), such as high responsivity (Rph) and photo gain (G) of 11.88 A/W, and 67.10, respectively. The maximum values for both the open-circuit voltage (VOC) and the short-circuit current (ISC) were observed to be 4.5 V, and 10 uA, respectively, at an input intensity of light 70.32 mW/cm2. The outcome of this study suggest PtS2/pyramids Si p-n junctions may be employed in numerous optoelectronics including photovoltaic cells, Zener tunneling diodes, avalanche breakdown diodes and photodetectors.
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Submitted 10 October, 2021;
originally announced October 2021.
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Quantum Hall Effect at 40 kelvin: Evidence of MacroscopicQuantization in the Extreme Soft Limit
Authors:
Timir Datta,
Michael Bleiweiss,
Anca Lungu,
Ming Yin,
Zafar Iqbal
Abstract:
Evidence of both fractional and integer quantum hall effects (QHE) in three dimensional bulk replica opal (250nm diameter) structures of non-crystalline carbon are presented. In a remarkably soft quantum limit of ~ 40K temperature and about one tesla of magnetic field clear hall steps, such as n= 2/3, 4/5, 1 and others were observed to be coordinated with the minima of longitudinal magneto-resis…
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Evidence of both fractional and integer quantum hall effects (QHE) in three dimensional bulk replica opal (250nm diameter) structures of non-crystalline carbon are presented. In a remarkably soft quantum limit of ~ 40K temperature and about one tesla of magnetic field clear hall steps, such as n= 2/3, 4/5, 1 and others were observed to be coordinated with the minima of longitudinal magneto-resistance. This behavior is indicative of macroscopic quantum phenomenon associated with electronic condensation into a strongly correlated quantum liquid (QL). For other systems, such as very high mobility, two-dimensional, electron (hole)-gas or (TDEG) these effects typically arise under high magnetic fields (B) and at low temperatures (T), i.e., in the extreme quantum limit (B/T>1). Currently, QHE is applied as calibration benchmark, international resistance standard, and a characterization technique for semiconductor heterostructures. We believe that applications can be widespread if the devices and the operating conditions were more accessible.
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Submitted 7 March, 2005;
originally announced March 2005.
