Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator
Authors:
Khanh Duy Nguyen,
Woojoo Lee,
Jianchen Dang,
Tongyao Wu,
Gabriele Berruto,
Chenhui Yan,
Chi Ian Jess Ip,
Haoran Lin,
Qiang Gao,
Seng Huat Lee,
Binghai Yan,
Chaoxing Liu,
Zhiqiang Mao,
Xiao-Xiao Zhang,
Shuolong Yang
Abstract:
The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of th…
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The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of this mechanism remains elusive, especially in intrinsic MTIs. Here we combine time-resolved photoemission spectroscopy with time-resolved magneto-optical Kerr effect measurements to elucidate the unique electromagnetism at the surface of an intrinsic MTI MnBi2Te4. Theoretical modeling based on 2D Ruderman-Kittel-Kasuya-Yosida interactions captures the initial quenching of a surface-rooted exchange gap within a factor of two but over-estimates the bulk demagnetization by one order of magnitude. This mechanism directly explains the sizable gap in the quasi-2D electronic state and the nonzero residual magnetization in even-layer MnBi2Te4. Furthermore, it leads to efficient light-induced demagnetization comparable to state-of-the-art magnetophotonic crystals, promising an effective manipulation of magnetism and topological orders for future topotronics.
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Submitted 28 June, 2024;
originally announced July 2024.
Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes
Authors:
Chi Ian Jess Ip,
Qiang Gao,
Khanhy Du Nguyen,
Chenhui Yan,
Gangbin Yan,
Eli Hoenig,
Thomas S. Marchese,
Minghao Zhang,
Woojoo Lee,
Hossein Rokni,
Ying Shirley Meng,
Chong Liu,
Shuolong Yang
Abstract:
Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is also challenging due to the non-negligible interlayer coupling therein. Here we liberate millimeter-scale films of topological insulator Bi$_2$Se$_3$, grown by mol…
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Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is also challenging due to the non-negligible interlayer coupling therein. Here we liberate millimeter-scale films of topological insulator Bi$_2$Se$_3$, grown by molecular beam epitaxy, down to 3 quintuple layers. We characterize the preservation of the topological surface states and quantum well states in transferred Bi$_{2}$Se$_{3}$ films using angle-resolved photoemission spectroscopy. Leveraging the photon-energy-dependent surface sensitivity, the photoemission spectra taken with $6$ eV and $21.2$ eV photons reveal a transfer-induced migration of the topological surface states from the top to the inner layers. By establishing clear electronic structures of the transferred films and unveiling the wavefunction relocation of the topological surface states, our work paves the physics foundation crucial for the future fabrication of artificially stacked topological materials with single-layer precision.
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Submitted 21 May, 2024;
originally announced May 2024.
