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Observation of reentrant metal-insulator transition in a random-dimer disordered SSH lattice
Authors:
Ze-Sheng Xu,
Jun Gao,
Adrian Iovan,
Ivan M. Khaymovich,
Val Zwiller,
Ali W. Elshaari
Abstract:
The interrelationship between localization, quantum transport, and disorder has remained a fascinating focus in scientific research. Traditionally, it has been widely accepted in the physics community that in one-dimensional systems, as disorder increases, localization intensifies, triggering a metal-insulator transition. However, a recent theoretical investigation [Phys. Rev. Lett. 126, 106803] h…
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The interrelationship between localization, quantum transport, and disorder has remained a fascinating focus in scientific research. Traditionally, it has been widely accepted in the physics community that in one-dimensional systems, as disorder increases, localization intensifies, triggering a metal-insulator transition. However, a recent theoretical investigation [Phys. Rev. Lett. 126, 106803] has revealed that the interplay between dimerization and disorder leads to a reentrant localization transition, constituting a remarkable theoretical advancement in the field. Here, we present the experimental observation of reentrant localization using an experimentally friendly model, a photonic SSH lattice with random-dimer disorder, achieved by incrementally adjusting synthetic potentials. In the presence of correlated on-site potentials, certain eigenstates exhibit extended behavior following the localization transition as the disorder continues to increase. We directly probe the wave function in disordered lattices by exciting specific lattice sites and recording the light distribution. This reentrant phenomenon is further verified by observing an anomalous peak in the normalized participation ratio. Our study enriches the understanding of transport in disordered mediums and accentuates the substantial potential of integrated photonics for the simulation of intricate condensed matter physics phenomena.
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Submitted 11 July, 2023;
originally announced July 2023.
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Coexistence of extended and localized states in finite-sized mosaic Wannier-Stark lattices
Authors:
Jun Gao,
Ivan M. Khaymovich,
Adrian Iovan,
Xiao-Wei Wang,
Govind Krishna,
Ze-Sheng Xu,
Emrah Tortumlu,
Alexander V. Balatsky,
Val Zwiller,
Ali W. Elshaari
Abstract:
Quantum transport and localization are fundamental concepts in condensed matter physics. It is commonly believed that in one-dimensional systems, the existence of mobility edges is highly dependent on disorder. Recently, there has been a debate over the existence of an exact mobility edge in a modulated mosaic model without quenched disorder, the so-called mosaic Wannier-Stark lattice. Here, we ex…
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Quantum transport and localization are fundamental concepts in condensed matter physics. It is commonly believed that in one-dimensional systems, the existence of mobility edges is highly dependent on disorder. Recently, there has been a debate over the existence of an exact mobility edge in a modulated mosaic model without quenched disorder, the so-called mosaic Wannier-Stark lattice. Here, we experimentally implement such disorder-free mosaic photonic lattices using a silicon photonics platform. By creating a synthetic electric field, we could observe energy-dependent coexistence of both extended and localized states in a finite number of waveguides. The Wannier-Stark ladder emerges when the resulting potential is strong enough, and can be directly probed by exciting different spatial modes of the lattice. Our studies provide the experimental proof of coexisting sets of strongly localized and conducting (though weakly localized) states in finite-sized mosaic Wannier-Stark lattices, which hold the potential to encode high-dimensional quantum resources with compact and robust structures.
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Submitted 11 October, 2023; v1 submitted 19 June, 2023;
originally announced June 2023.
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Experimental probe of multi-mobility edges in quasiperiodic mosaic lattices
Authors:
Jun Gao,
Ivan M. Khaymovich,
Xiao-Wei Wang,
Ze-Sheng Xu,
Adrian Iovan,
Govind Krishna,
Alexander V. Balatsky,
Val Zwiller,
Ali W. Elshaari
Abstract:
The mobility edge (ME) is a crucial concept in understanding localization physics, marking the critical transition between extended and localized states in the energy spectrum. Anderson localization scaling theory predicts the absence of ME in lower dimensional systems. Hence, the search for exact MEs, particularly for single particles in lower dimensions, has recently garnered significant interes…
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The mobility edge (ME) is a crucial concept in understanding localization physics, marking the critical transition between extended and localized states in the energy spectrum. Anderson localization scaling theory predicts the absence of ME in lower dimensional systems. Hence, the search for exact MEs, particularly for single particles in lower dimensions, has recently garnered significant interest in both theoretical and experimental studies, resulting in notable progress. However, several open questions remain, including the possibility of a single system exhibiting multiple MEs and the continual existence of extended states, even within the strong disorder domain. Here, we provide experimental evidence to address these questions by utilizing a quasiperiodic mosaic lattice with meticulously designed nanophotonic circuits. Our observations demonstrate the coexistence of extended and localized states in lattices with broken duality symmetry and varying modulation periods. By single site injection and scanning the disorder level, we could approximately probe the ME of the modulated lattice. These results corroborate recent theoretical predictions, introduce a new avenue for investigating ME physics, and offer inspiration for further exploration of ME physics in the quantum regime using hybrid integrated photonic devices.
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Submitted 19 June, 2023;
originally announced June 2023.
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Crossover between short and long range proximity effects in SFS junctions with Ni-based ferromagnets
Authors:
O. M. Kapran,
T. Golod,
A. Iovan,
A. S. Sidorenko,
A. A. Golubov,
V. M. Krasnov
Abstract:
We study Superconductor/Ferromagnet/Superconductor junctions with CuNi, PtNi, or Ni interlayers. Remarkably, we observe that supercurrents through Ni can be significantly larger than through diluted alloys. The phenomenon is attributed to the dirtiness of disordered alloys leading to a short coherence length despite a small exchange energy. To the contrary, pure Ni is clean resulting in a coherenc…
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We study Superconductor/Ferromagnet/Superconductor junctions with CuNi, PtNi, or Ni interlayers. Remarkably, we observe that supercurrents through Ni can be significantly larger than through diluted alloys. The phenomenon is attributed to the dirtiness of disordered alloys leading to a short coherence length despite a small exchange energy. To the contrary, pure Ni is clean resulting in a coherence length as long as in a normal metal. Analysis of temperature dependencies of critical currents reveals a crossover from short (dirty) to long (clean) range proximity effects in Pt1-xNix with increasing Ni concentration. Our results point out that structural properties of a ferromagnet play a crucial role for the proximity effect and indicate that conventional strong-but-clean ferromagnets can be advantageously used in superconducting spintronic devices.
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Submitted 22 February, 2021;
originally announced February 2021.
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Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets
Authors:
O. M. Kapran,
A. Iovan,
T. Golod,
V. M. Krasnov
Abstract:
We study experimentally nanoscale Josephson junctions and Josephson spin-valves containing strong Ni ferromagnets. We observe that in contrast to junctions, spin valves with the same geometry exhibit anomalous Ic(H) patterns with two peaks separated by a dip. We develop several techniques for in-situ characterization of micromagnetic states in our nano-devices, including magnetoresistance, absolut…
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We study experimentally nanoscale Josephson junctions and Josephson spin-valves containing strong Ni ferromagnets. We observe that in contrast to junctions, spin valves with the same geometry exhibit anomalous Ic(H) patterns with two peaks separated by a dip. We develop several techniques for in-situ characterization of micromagnetic states in our nano-devices, including magnetoresistance, absolute Josephson fluxometry and First-Order-Reversal-Curves analysis. They reveal a clear correlation of the dip in supercurrent with the antiparallel state of a spin-valve and the peaks with two noncollinear magnetic states, thus providing evidence for generation of spin-triplet superconductivity. A quantitative analysis brings us to a conclusion that the triplet current in out Ni-based spin-valves is approximately three times larger than the conventional singlet supercurrent.
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Submitted 18 December, 2019;
originally announced December 2019.
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Controllable generation of a spin-triplet supercurrent in a Josephson spin-valve
Authors:
Adrian Iovan,
Taras Golod,
Vladimir M. Krasnov
Abstract:
It has been predicted theoretically that an unconventional odd-frequency spin-triplet component of superconducting order parameter can be induced in multilayered ferromagnetic structures with non-collinear magnetization. In this work we study experimentally nano-scale devices, in which a ferromagnetic spin valve is embedded into a Josephson junction. We demonstrate two ways of in-situ analysis of…
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It has been predicted theoretically that an unconventional odd-frequency spin-triplet component of superconducting order parameter can be induced in multilayered ferromagnetic structures with non-collinear magnetization. In this work we study experimentally nano-scale devices, in which a ferromagnetic spin valve is embedded into a Josephson junction. We demonstrate two ways of in-situ analysis of such Josephson spin valves: via magnetoresistance measurements and via in-situ magnetometry based on flux quantization in the junction. We observe that supercurrent through the device depends on the relative orientation of magnetization of the two ferromagnetic layers and is enhanced in the non-collinear state of the spin valve. This provides a direct prove of controllable generation of the spin-triplet superconducting component in a ferromagnet.
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Submitted 19 May, 2014;
originally announced May 2014.
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Stimulated emission of radiation using spin-population inversion in metals: a spin-laser
Authors:
V. Korenivski,
A. Iovan,
A. Kadigrobov,
R. I. Shekhter
Abstract:
Arrays of 10 nm-diameter point contacts of exchange-coupled spin-majority/spin-minority ferromagnetic metals, integrated into infrared-terahertz range photon resonators, are fabricated and measured electrically and optically. Giant, threshold-type electronic excitations under high-current pum** of the devices are observed as abrupt but reversible steps in device resistance, in many cases in acce…
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Arrays of 10 nm-diameter point contacts of exchange-coupled spin-majority/spin-minority ferromagnetic metals, integrated into infrared-terahertz range photon resonators, are fabricated and measured electrically and optically. Giant, threshold-type electronic excitations under high-current pum** of the devices are observed as abrupt but reversible steps in device resistance, in many cases in access of 100%, which correlate with optical emission from the devices. The results are interpreted as due to stimulated spin-flip electron-photon relaxation in the system.
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Submitted 9 January, 2013; v1 submitted 2 August, 2012;
originally announced August 2012.
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Sub-10 nm colloidal lithography for integrated spin-photo-electronic devices
Authors:
A. Iovan,
M. Fischer,
R. Lo Conte,
V. Korenivski
Abstract:
Colloidal lithography [1] is how patterns are reproduced in a variety of natural systems and is used more and more as an efficient fabrication tool in bio-, opto-, and nano-technology. Nanoparticles in the colloid are made to form a mask on a given material surface, which can then be transferred via etching into nano-structures of various sizes, shapes, and patterns [2,3]. Such nanostructures can…
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Colloidal lithography [1] is how patterns are reproduced in a variety of natural systems and is used more and more as an efficient fabrication tool in bio-, opto-, and nano-technology. Nanoparticles in the colloid are made to form a mask on a given material surface, which can then be transferred via etching into nano-structures of various sizes, shapes, and patterns [2,3]. Such nanostructures can be used in biology for detecting proteins [4] and DNA [5,6], for producing artificial crystals in photonics [7,8] and GHz oscillators in spin-electronics [9-14]. Scaling of colloidal patterning down to 10-nm and below, dimensions comparable or smaller than the main relaxation lengths in the relevant materials, including metals, is expected to enable a variety of new ballistic transport and photonic devices, such as spin-flip THz lasers [15]. In this work we extend the practice of colloidal lithography to producing large-area, near-ballistic-injection, sub-10 nm point-contact arrays and demonstrate their integration in to spin-photo-electronic devices.
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Submitted 2 August, 2012; v1 submitted 31 July, 2012;
originally announced July 2012.
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Spin Diode Based on Fe/MgO Double Tunnel Junction
Authors:
A. Iovan,
S. Andersson,
Yu. G. Naidyuk,
A. Vedyaev,
B. Dieny,
V. Korenivski
Abstract:
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob…
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We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.
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Submitted 18 October, 2007; v1 submitted 16 May, 2007;
originally announced May 2007.
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Diode Effect in Asymmetric Double Tunnel Barriers with Single Metal Nanoclusters
Authors:
A. Iovan,
D. B. Haviland,
V. Korenivski
Abstract:
Asymmetric double tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps in the current voltage characteristic (IVC). Record high current rectification ratios of 10000 for tunneling through such clusters are demonstrated at room t…
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Asymmetric double tunnel barriers with the center electrode being a metal cluster in the quantum regime are studied. The zero dimensionality of the clusters used and the associated quantized energy spectra are manifest in well-defined steps in the current voltage characteristic (IVC). Record high current rectification ratios of 10000 for tunneling through such clusters are demonstrated at room temperature. We are able to account for all of the experimentally observed features by modeling our double barrier structures using a combination of discrete states and charging effects for tunneling through quantum dots.
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Submitted 20 March, 2006; v1 submitted 16 March, 2006;
originally announced March 2006.
