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Suppression of nucleation density in twisted graphene domains grown on graphene/SiC template by sequential thermal process
Authors:
Yao Yao,
Taiki Inoue,
Makoto Takamura,
Yoshitaka Taniyasu,
Yoshihiro Kobayashi
Abstract:
We investigated the growth of twisted graphene on graphene/silicon carbide (SiC-G) templates by metal-free chemical vapor deposition (CVD) through a sequential thermal (ST) process, which exploits the ultraclean surface of SiC-G without exposing the surface to air before CVD. By conducting control experiments with SiC-G templates exposed to air (AirE process), structural analysis by atomic force m…
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We investigated the growth of twisted graphene on graphene/silicon carbide (SiC-G) templates by metal-free chemical vapor deposition (CVD) through a sequential thermal (ST) process, which exploits the ultraclean surface of SiC-G without exposing the surface to air before CVD. By conducting control experiments with SiC-G templates exposed to air (AirE process), structural analysis by atomic force microscopy revealed that the nucleation density of CVD graphene (CVD-G) was significantly suppressed in the ST process under the same growth condition. The nucleation behavior on SiC-G surfaces is observed to be very sensitive to carbon source concentration and process temperature. The nucleation on the ultraclean surface of SiC-G prepared by the ST process requires higher partial pressure of carbon source compared with that on the surface by the AirE process. Moreover, analysis of CVD-G growth over a wide temperature range indicates that nucleation phenomena change dramatically with a threshold temperature of 1300°C, possibly due to arising of etching effects. The successful synthesis of twisted few-layer graphene (tFLG) was affirmed by Raman spectroscopy, in which analysis of the G' band proves a high ratio of twisted structure in CVD-G. These results demonstrate that metal-free CVD utilizing ultraclean templates is an effective approach for the scalable production of large-domain tFLG that is valuable for electronic applications.
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Submitted 7 February, 2024;
originally announced February 2024.
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Reduction of Interlayer Interaction in Multilayer Stacking Graphene with Carbon Nanotube Insertion: Insights from Experiment and Simulation
Authors:
Mingda Ding,
Taiki Inoue,
John Isaac Enriquez,
Harry Handoko Halim,
Yui Ogawa,
Yoshitaka Taniyasu,
Yuji Hamamoto,
Yoshitada Morikawa,
Yoshihiro Kobayashi
Abstract:
The creation of multilayer graphene (Gr), while preserving the brilliant properties of monolayer Gr derived from its unique band structure, can expand the application field of Gr to the macroscale. However, the energy-favorable AB stacking structure in the multilayer Gr induces a strong interlayer interaction and alters the band structure. Consequently, the intrinsic properties of each monolayer a…
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The creation of multilayer graphene (Gr), while preserving the brilliant properties of monolayer Gr derived from its unique band structure, can expand the application field of Gr to the macroscale. However, the energy-favorable AB stacking structure in the multilayer Gr induces a strong interlayer interaction and alters the band structure. Consequently, the intrinsic properties of each monolayer are degraded. In this work, we insert carbon nanotubes (CNTs) as nanospacers to modulate the microstructure of multilayer stacking Gr. Nanospacers can increase the interlayer distance and reduce the interlayer interaction. The Gr/CNT stacking structure is experimentally fabricated using a dry transfer method in a layer-by-layer manner. Raman spectroscopy verifies the reduction in the interlayer interaction within the stacking structure. Atomic force microscopy shows an increase in the interlayer distance, which can explain the weakening of the interlayer interactions. The microstructure of the stacked Gr and CNTs is studied by molecular dynamics simulation to systematically investigate the effect of CNT insertion. We found that the distribution distance, size, and arrangement of the CNT can modulate the interlayer distance. These results will help us to understand and improve the properties of the composite systems consisting of Gr and CNTs.
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Submitted 6 December, 2023;
originally announced December 2023.
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Gas flow-directed growth of aligned carbon nanotubes from nonmetallic seeds
Authors:
Yuanjia Liu,
Taiki Inoue,
Mengyue Wang,
Michiharu Arifuku,
Noriko Kiyoyanagi,
Yoshihiro Kobayashi
Abstract:
Kite growth is a process that utilizes laminar gas flow in chemical vapor deposition to grow long, well-aligned carbon nanotubes (CNTs) for electronic application. This process uses metal nanoparticles (NPs) as catalytic seeds for CNT growth. However, these NPs remain as impurities in the grown CNT. In this study, nanodiamonds (NDs) with negligible catalytic activity were utilized as nonmetallic s…
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Kite growth is a process that utilizes laminar gas flow in chemical vapor deposition to grow long, well-aligned carbon nanotubes (CNTs) for electronic application. This process uses metal nanoparticles (NPs) as catalytic seeds for CNT growth. However, these NPs remain as impurities in the grown CNT. In this study, nanodiamonds (NDs) with negligible catalytic activity were utilized as nonmetallic seeds instead of metal catalysts because they are stable at high temperatures and facilitate the growth of low-defect CNTs without residual metal impurities. Results demonstrate the successful growth of over 100-$μ$m-long CNTs by carefully controlling the growth conditions. Importantly, we developed an analysis method that utilizes secondary electron (SE) yield to distinguish whether or not CNTs grown from metal impurities. The absence of metallic NPs at the CNT tips was revealed by the SE yield map**, whereas the presence of some kind of NPs at the same locations was confirmed by atomic force microscopy (AFM). These results suggest that most of the aligned CNTs were grown from nonmetallic seeds, most likely ND-derived NPs, via the tip-growth mode. Structural characterizations revealed the high crystallinity of CNTs, with relatively small diameters. This study presents the first successful use of nonmetallic seeds for kite growth and provides a convincing alternative for starting materials to prepare long, aligned CNTs without metal impurities. The findings of this study pave the way for more convenient fabrication of aligned CNT-based devices, potentially simplifying the production process by avoiding the need for the removal of metal impurities.
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Submitted 25 July, 2023; v1 submitted 24 July, 2023;
originally announced July 2023.
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Bulk-scale synthesis of randomly stacked graphene with high crystallinity
Authors:
Zizhao Xu,
Shingo Nakamura,
Taiki Inoue,
Yuta Nishina,
Yoshihiro Kobayashi
Abstract:
Since the strong interlayer interaction of AB-stacked graphene in bulk form degrades the superior property of single-layer graphene, formation of randomly stacked graphene is required to apply the high performances of graphene to macroscopic devices. However, conventional methods to obtain bulk-scale graphene suffer from a low crystallinity and/or the formation of a thermodynamically stable AB-sta…
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Since the strong interlayer interaction of AB-stacked graphene in bulk form degrades the superior property of single-layer graphene, formation of randomly stacked graphene is required to apply the high performances of graphene to macroscopic devices. However, conventional methods to obtain bulk-scale graphene suffer from a low crystallinity and/or the formation of a thermodynamically stable AB-stacked structure. This study develops a novel approach to produce bulk-scale graphene with a high crystallinity and high fractions of random stacking by utilizing the porous morphology of a graphene oxide sponge and an ultrahigh temperature treatment of 1500-1800 °C with ethanol vapor. Raman spectroscopy indicates that the obtained bulk-scale graphene sponge possesses a high crystallinity and a high fraction of random stacking of 80%. The large difference in the random-stacking ratio between the sponge and the aggregate samples confirms the importance of accessibility of ethanol-derived species into the internal area. By investigating the effect of treatment temperature, a higher random-stacking ratio is obtained at 1500 °C. Moreover, the AB-stacking fraction was reduced to less than 10% by introducing cellulose nanofiber as a spacer to prevent direct stacking of graphene. The proposed method is effective for large-scale production of high-performance bulk-scale graphene.
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Submitted 22 February, 2023; v1 submitted 21 February, 2023;
originally announced February 2023.
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Combination effect of growth enhancers and carbon sources on synthesis of single-walled carbon nanotubes from solid carbon growth seeds
Authors:
Mengyue Wang,
Yuanjia Liu,
Manaka Maekawa,
Michiharu Arifuku,
Noriko Kiyoyanagi,
Taiki Inoue,
Yoshihiro Kobayashi
Abstract:
In the synthesis of highly crystalline single-walled carbon nanotubes (SWCNTs), high growth temperatures are preferred, while the formation of impurity amorphous carbon (a-C) causes the termination of SWCNT growth and degrades its properties. To remove this by-product, H2O and CO2 have been employed in metal-catalyzed SWCNT growth systems because of their oxidizing ability. Recently, nonmetallic n…
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In the synthesis of highly crystalline single-walled carbon nanotubes (SWCNTs), high growth temperatures are preferred, while the formation of impurity amorphous carbon (a-C) causes the termination of SWCNT growth and degrades its properties. To remove this by-product, H2O and CO2 have been employed in metal-catalyzed SWCNT growth systems because of their oxidizing ability. Recently, nonmetallic nanoparticles have become one of the growth seed candidates because of their high melting points and fewer metal impurities. In this study, by using nanodiamond-derived carbon nanoparticles as the solid growth seeds, we investigated the effect of CO2 and H2O on high-temperature SWCNT growth with two types of carbon-source supplies: C2H2 and C2H4. In this growth system, H2O showed oxidizing ability to etch a-C with either carbon sources. CO2 exhibited a similar a-C formation-preventing role in C2H4-supplied growth and achieved higher-purity SWCNTs with higher concentration of C2H4 than the case of H2O. However, in contrast to the other combinations, CO2 injection in the C2H2-supplied growth significantly enhanced the formation of a-C rather than the removal of it while the yield of SWCNTs was also increased, indicating the occurrence of the dehydration reaction between CO2 and C2H2. The present findings will lead to efficient growth of high-quality SWCNTs from nonmetallic growth seeds with the use of growth enhancers.
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Submitted 20 February, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
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Trion confinement in monolayer MoSe2 by carbon nanotube local gating
Authors:
Takato Hotta,
Haruna Nakajima,
Shohei Chiashi,
Taiki Inoue,
Shigeo Maruyama,
Kenji Watanabe,
Takashi Taniguchi,
Ryo Kitaura
Abstract:
We have successfully confined trions into a one-dimensional restricted space of a MoSe2 device with CNT gate electrodes. The dry transfer process, including deterministic dry transfer of aligned CNTs, has led to an hBN-encapsulated MoSe2 device with CNT back gate electrodes. In contrast to a location without CNT gate electrodes, applying voltage via CNT gate electrodes significantly alters PL spec…
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We have successfully confined trions into a one-dimensional restricted space of a MoSe2 device with CNT gate electrodes. The dry transfer process, including deterministic dry transfer of aligned CNTs, has led to an hBN-encapsulated MoSe2 device with CNT back gate electrodes. In contrast to a location without CNT gate electrodes, applying voltage via CNT gate electrodes significantly alters PL spectra at a location with CNT gate electrodes. PL imaging has revealed that image contrast from trions is linear along the CNT electrode underneath, consistent with 1D confinement of trions in response to the CNT local gating. The confinement width obtained from the PL image is 5.5 x 10^2 nm, consistent with nanoscale 1D confined trions with the diffraction limit broadening. This work has demonstrated electrical control of excitonic states at the nanoscale, leading to novel optoelectronic properties and exciton devices in the future.
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Submitted 15 July, 2022;
originally announced July 2022.
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Spin dynamics of positively charged excitons in Cr$^+$-doped quantum dots probed by resonant photoluminescence
Authors:
V. Tiwari,
M. Morita T. Inoue,
S. Ando S. Kuroda,
H. Boukari,
L. Besombes
Abstract:
We study the dynamics of the spin system that consist of a positively charged II-VI semiconductor quantum dot doped with a single Cr$^+$ ion. The resonant photoluminescence (PL) of the positively charged exciton coupled with the Cr$^+$ spin is used to analyze the main spin relaxation channels. The intensity of the resonant PL is reduced by an optical pum** of the spin of the resident hole-Cr…
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We study the dynamics of the spin system that consist of a positively charged II-VI semiconductor quantum dot doped with a single Cr$^+$ ion. The resonant photoluminescence (PL) of the positively charged exciton coupled with the Cr$^+$ spin is used to analyze the main spin relaxation channels. The intensity of the resonant PL is reduced by an optical pum** of the spin of the resident hole-Cr$^+$ complex that can be seen as a nano-magnet. The spin memory can be partially erased by a non-resonant optical excitation. This leads to an increase of the resonant PL signal. The resonant PL is co-circularly polarized and corresponds to relaxation channels that conserve the Cr$^+$ spin $\vert S_z \vert$. The observation in the resonant-PL excitation spectra of optical transitions with a change of the Cr$^+$ spin permits to determine the magnetic anisotropy of the magnetic atom. Optical pum**, auto-correlation measurements and the power dependence of the PL intensity distribution show that the effective temperature of the hole-Cr$^+$ spin system is affected by the optical excitation through the local generation of phonons.
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Submitted 17 May, 2022;
originally announced May 2022.
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Correspondence of topological classification between quantum graph extra dimension and topological matter
Authors:
Tomonori Inoue,
Makoto Sakamoto,
Masatoshi Sato,
Inori Ueba
Abstract:
In this paper, we study five-dimensional Dirac fermions of which extra-dimension is compactified on quantum graphs. We find that there is a non-trivial correspondence between matrices specifying boundary conditions at the vertex of the quantum graphs and zero-dimensional Hamiltonians in gapped free-fermion systems. Based on the correspondence, we provide a complete topological classification of th…
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In this paper, we study five-dimensional Dirac fermions of which extra-dimension is compactified on quantum graphs. We find that there is a non-trivial correspondence between matrices specifying boundary conditions at the vertex of the quantum graphs and zero-dimensional Hamiltonians in gapped free-fermion systems. Based on the correspondence, we provide a complete topological classification of the boundary conditions in terms of non-interacting fermionic topological phases. The ten symmetry classes of topological phases are fully identified in the language of five-dimensional Dirac fermions, and topological numbers of the boundary conditions are given. In analogy with the bulk-boundary correspondence in non-interacting fermionic topological phases, the boundary condition topological numbers predict four-dimensional massless fermions localized at the vertex of the quantum graphs and thus govern the low energy physics in four dimensions.
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Submitted 21 September, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Polarized Raman Response of Two-Dimensional Quasiperiodic Antiferromagnets: Configuration-Interaction versus Green's Function Approaches
Authors:
Takashi Inoue,
Shoji Yamamoto
Abstract:
We study Raman response of Heisenberg antiferromagnets on the $\mathbf{C}_\mathrm{5v}$ Penrose and $\mathbf{C}_\mathrm{8v}$ Ammann-Beenker lattices within and beyond the Loudon-Fleury second-order perturbation scheme intending to explore optical features peculiar to quasiperiodic magnets. Within the Loudon-Fleury mechanism, we find one and only Raman-active mode of $\mathrm{E}_2$ symmetry without…
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We study Raman response of Heisenberg antiferromagnets on the $\mathbf{C}_\mathrm{5v}$ Penrose and $\mathbf{C}_\mathrm{8v}$ Ammann-Beenker lattices within and beyond the Loudon-Fleury second-order perturbation scheme intending to explore optical features peculiar to quasiperiodic magnets. Within the Loudon-Fleury mechanism, we find one and only Raman-active mode of $\mathrm{E}_2$ symmetry without any dependence on linear incident and scattered polarizations. Beyond the Loudon-Fleury mechanism, two more symmetry species $\mathrm{A}_1$ and $\mathrm{A}_2$ are activated via dynamic ring exchange and chiral spin fluctuations, respectively, which can be extracted by the use of circular as well as linear polarizations. We employ Green's functions on one hand and configuration-interaction wavefunctions on the other hand to calculate the multimagnon contributions to inelastic light scatterings. Demonstrating the great advantage of the configuration-interaction scheme, we reveal that a major portion of the Shastry-Shraiman fourth-order Raman intensity is mediated by multimagnon fluctuations.
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Submitted 1 April, 2022;
originally announced April 2022.
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Photoinduced 120-degree spin order in the Kondo-lattice model on a triangular lattice
Authors:
Takashi Inoue,
Masahito Mochizuki
Abstract:
We theoretically predict the emergence of 120-degree spin order as a nonequilibrium steady state in the photodriven Kondo-lattice model on a triangular lattice. In the system away from the half filling with ferromagnetic ground state, the photoexcitation of conduction electrons and the photoinduced renormalization of bandwidth cause reconstruction of band structure and subsequent redistribution of…
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We theoretically predict the emergence of 120-degree spin order as a nonequilibrium steady state in the photodriven Kondo-lattice model on a triangular lattice. In the system away from the half filling with ferromagnetic ground state, the photoexcitation of conduction electrons and the photoinduced renormalization of bandwidth cause reconstruction of band structure and subsequent redistribution of the electrons through relaxations, which result in an electronic structure similar to that in the half-filled system at equilibrium, where the 120-degree spin order is stabilized. In this photoinduced 120-degree spin ordered phase, domains of different spin-ordered planes are formed, and vortices of spin chirality vectors called $Z_2$ vortices appear at points where multiple domains meet. We also discuss favorable conditions and experimental feasibility to observe the predicted photoinduced magnetic phase transition by investigating dependencies on the light parameters (amplitude, frequency, and polarization), the electron filling, the strength of Kondo coupling, and the effects of antiferromagnetic coupling among the localized spins. Photoinduced magnetic structures proposed so far have been limited to simple collinear (anti)ferromagnetic orders or local magnetic defects in magnets. The present work paves a way to optical creation of complex noncollinear magnetisms as global nonequilibrium steady phase in photodriven systems.
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Submitted 14 April, 2022; v1 submitted 14 February, 2022;
originally announced February 2022.
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Universal map of gas-dependent kinetic selectivity in carbon nanotube growth
Authors:
K. Otsuka,
R. Ishimaru,
A. Kobayashi,
T. Inoue,
R. Xiang,
S. Chiashi,
Y. K. Kato,
S. Maruyama
Abstract:
Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive under…
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Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model and provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, our kinetic model and experiments demonstrate that chirality-dependent growth rates emerge when sufficient amounts of carbon and etching agents are co-supplied. As the model can be extended to create kinetic maps as a function of gas compositions, our findings resolve discrepancies in literature and offer rational strategies for chirality selective growth for practical applications.
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Submitted 16 November, 2021;
originally announced November 2021.
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One-dimensional van der Waals Heterostructures: Growth Mechanism and Handedness Correlation Revealed by Non-destructive TEM
Authors:
Yongjia Zheng,
Akihito Kumamoto,
Kaoru Hisama,
Keigo Otsuka,
Grace Wickerson,
Yuta Sato,
Ming Liu,
Taiki Inoue,
Shohei Chiashi,
Dai-Ming Tang,
Qiang Zhang,
Anton Anisimov,
Esko I. Kauppinen,
Yan Li,
Kazu Suenaga,
Yuichi Ikuhara,
Shigeo Maruyamaa,
Rong Xiang
Abstract:
In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD) synthesized one-dimensional (1D) van der Waals heterostructures. Edge structures, nucleation sites, crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanot…
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In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD) synthesized one-dimensional (1D) van der Waals heterostructures. Edge structures, nucleation sites, crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanotubes on a CVD-compatible Si/SiO2 TEM grid, which enabled a transfer-free and non-destructive access to many intrinsic structural details. In particular, we have distinguished different shaped boron nitride nanotube (BNNT) edges, which are confirmed, by electron diffraction at the same location, to be strictly associated with its own chiral angle and polarity. We also demonstrate the importance of surface cleanness and isolation for the formation of perfect 1D heterostructures. Furthermore, we elucidate the handedness correlation between SWCNT template and BNNT crystals. This work not only provides an in-depth understanding of this new 1D heterostructure material group, but also, in a more general perspective, serves as an interesting investigation on crystal growth on highly curved (radius of a couple of nm) atomic substrates.
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Submitted 28 July, 2021;
originally announced July 2021.
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A hole-Cr$^{+}$ nano-magnet in a semiconductor quantum dot
Authors:
V. Tiwari,
M. Arino,
S. Gupta,
M. Morita,
T. Inoue,
D. Caliste,
P. Pochet,
H. Boukari,
S. Kuroda,
L. Besombes
Abstract:
We study a new diluted magnetic semiconductor system based on the spin of the ionized acceptor Cr$^+$. We show that the negatively charged Cr$^+$ ion, an excited state of the Cr in II-VI semiconductor, can be stable when inserted in a CdTe quantum dot (QD). The Cr$^+$ attracts a heavy-hole in the QD and form a stable hole-Cr$^+$ complex. Optical probing of this system reveals a ferromagnetic coupl…
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We study a new diluted magnetic semiconductor system based on the spin of the ionized acceptor Cr$^+$. We show that the negatively charged Cr$^+$ ion, an excited state of the Cr in II-VI semiconductor, can be stable when inserted in a CdTe quantum dot (QD). The Cr$^+$ attracts a heavy-hole in the QD and form a stable hole-Cr$^+$ complex. Optical probing of this system reveals a ferromagnetic coupling between heavy-holes and Cr$^+$ spins. At low temperature, the thermalization on the ground state of the hole-Cr$^+$ system with parallel spins prevents the optical recombination of the excess electron on the 3$d$ shell of the atom. We study the dynamics of the nano-magnet formed by the hole-Cr$^+$ exchange interaction. The ferromagnetic ground states with M$_z$=$\pm$4 can be controlled by resonant optical pum** and a spin relaxation time in the 20 $μ$s range is obtained at T=4.2 K. This spin memory at zero magnetic field is limited by the interaction with phonons.
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Submitted 28 July, 2021; v1 submitted 7 July, 2021;
originally announced July 2021.
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Formation of Organic Color Centers in Air-Suspended Carbon Nanotubes Using Vapor-Phase Reaction
Authors:
D. Kozawa,
X. Wu,
A. Ishii,
J. Fortner,
K. Otsuka,
R. Xiang,
T. Inoue,
S. Maruyama,
Y. Wang,
Y. K. Kato
Abstract:
Organic color centers in single-walled carbon nanotubes have demonstrated exceptional ability to generate single photons at room temperature in the telecom range. Combining the color centers with pristine air-suspended tubes would be desirable for improved performance, but all current synthetic methods occur in solution which makes them incompatible. Here we demonstrate formation of color centers…
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Organic color centers in single-walled carbon nanotubes have demonstrated exceptional ability to generate single photons at room temperature in the telecom range. Combining the color centers with pristine air-suspended tubes would be desirable for improved performance, but all current synthetic methods occur in solution which makes them incompatible. Here we demonstrate formation of color centers in air-suspended nanotubes using vapor-phase reaction. Functionalization is directly verified on the same nanotubes by photoluminescence spectroscopy, with unambiguous statistics from more than a few thousand individual nanotubes. The color centers show a strong diameter-dependent emission intensity, which can be explained with a theoretical model for chemical reactivity taking into account strain along the tube curvature. We are also able to estimate the defect density by comparing the experiments with simulations based on a one-dimensional diffusion equation, whereas the analysis of diameter dependent peak energies gives insight to the nature of the dopant states. Time-resolved measurements show a longer lifetime for color center emission compared to E$_{11}$ exciton states. Our results highlight the influence of the tube structure on vapor-phase reactivity and emission properties, providing guidelines for development of high-performance near-infrared quantum light sources.
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Submitted 28 February, 2021;
originally announced March 2021.
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Photoluminescence from Single-Walled MoS$_2$ Nanotubes Coaxially Grown on Boron Nitride Nanotubes
Authors:
Ming Liu,
Kaoru Hisama,
Yongjia Zheng,
Mina Maruyama,
Seungju Seo,
Anton Anisimov,
Taiki Inoue,
Esko I. Kauppinen,
Susumu Okada,
Shohei Chiashi,
Rong Xiang,
Shigeo Maruyama
Abstract:
Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observ…
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Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS$_2$ nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS$_2$ nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS$_2$ nanotubes, the PL signal is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS$_2$ nanotubes were examined through characterizations by PL, XPS, and Raman spectroscopy. Unlike the single-walled MoS$_2$ nanotubes, multi-walled MoS$_2$ nanotubes do not emit light. Single- and multi-walled MoS$_2$ nanotubes exhibit different Raman features in both resonant and non-resonant Raman spectra. The method of assembling heteronanotubes using BNNTs as templates provides an efficient approach for exploring the electronic and optical properties of other transition metal dichalcogenide nanotubes.
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Submitted 18 December, 2020;
originally announced December 2020.
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One-dimensional van der Waals heterojunction diode
Authors:
Ya Feng,
Henan Li,
Taiki Inoue,
Shohei Chiashi,
Slava V. Rotkin,
Rong Xiang,
Shigeo Maruyama
Abstract:
The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural do** results in p-type electrical characte…
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The synthesis of one-dimensional van der Waals heterostructures was realized recently, which opens up new possibilities for prospective applications in electronics and optoelectronics. The even reduced dimension will enable novel properties and further miniaturization beyond the capabilities of its two-dimensional counterparts have revealed. The natural do** results in p-type electrical characteristics for semiconducting single-walled carbon nanotubes, while n-type for molybdenum disulfide with conventional noble metal contacts. Therefore, we demonstrate here a one-dimensional heterostructure nanotube of 11-nm-wide, with the coaxial assembly of semiconducting single-walled carbon nanotube, insulating boron nitride nanotube, and semiconducting molybdenum disulfide nanotube which induces a radial semiconductor-insulator-semiconductor heterojunction. When opposite potential polarity was applied on semiconducting single-walled carbon nanotube and molybdenum disulfide nanotube, respectively, the rectifying effect was materialized.
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Submitted 5 December, 2020;
originally announced December 2020.
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Theory of the Inverse Faraday Effect due to the Rashba Spin-Oribt Interactions: Roles of Band Dispersions and Fermi Surfaces
Authors:
Yasuhiro Tanaka,
Takashi Inoue,
Masahito Mochizuki
Abstract:
We theoretically study the inverse Faraday effect, i.e., the optical induction of spin polarization with circularly polarized light, by particularly focusing on effects of band dispersions and Fermi surfaces in crystal systems with the spin-orbit interaction (SOI). By numerically solving the time-dependent Schrödinger equation of a tight-binding model with the Rashba-type SOI, we reproduce the lig…
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We theoretically study the inverse Faraday effect, i.e., the optical induction of spin polarization with circularly polarized light, by particularly focusing on effects of band dispersions and Fermi surfaces in crystal systems with the spin-orbit interaction (SOI). By numerically solving the time-dependent Schrödinger equation of a tight-binding model with the Rashba-type SOI, we reproduce the light-induced spin polarization proportional to $E_0^2/ω^3$ where $E_0$ and $ω$ are the electric-field amplitude and the angular frequency of light, respectively. This optical spin induction is attributed to dynamical magnetoelectric coupling between the light electric field and the electron spins mediated by the SOI. We elucidate that the magnitude and sign of the induced spin polarization sensitively depend on the electron filling. To understand these results, we construct an analytical theory based on the Floquet theorem. The theory successfully explains the dependencies on $E_0$ and $ω$ and ascribes the electron-filling dependence to a momentum-dependent effective magnetic field governed by the Fermi-surface geometry. Several candidate materials and experimental conditions relevant to our theory and model parameters are also discussed. Our findings will enable us to engineer the magneto-optical responses of matters via tuning the material parameters.
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Submitted 15 July, 2020;
originally announced July 2020.
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Room-temperature quantum spin Hall phase in laser-patterned few-layer 1T'- MoS2
Authors:
Naoki Katsuragawa,
Mizuki Nishizawa,
Taketomo Nakamura,
Taiki Inoue,
Sahar Pakdel,
Shigeo Maruyama,
Shingo Katsumoto,
Juan Jose Palacios,
Junji Haruyama
Abstract:
The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over…
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The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported, verifications of the QSH phase by resistance measurements are comparatively few. This is partly due to the poor uniformity of the bulk gap induced by the substrate over a large sample area and/or defects induced by oxidation. Here, we report the observation of the QSH phase at room-temperature in the 1T'-phase of few-layer MoS2 patterned onto the 2H semiconducting phase using low-power and short-time laser beam irradiation. Two different resistance measurements reveal hallmark transport conductance values, ~e2/2h and e2/4h, as predicted by the theory. Magnetic-field dependence, scanning tunneling spectra, and calculations support the emergence of the room-temperature QSH phase. Although further experimental verification is still desirable, our results provide feasible application to room-temperature topological devices.
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Submitted 26 June, 2020; v1 submitted 15 June, 2020;
originally announced June 2020.
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Efficient Growth and Characterization of One Dimensional Transition Metal Tellurides Inside Carbon Nanotubes
Authors:
Naoyuki Kanda,
Yusuke Nakanishi,
Dan Liu,
Zheng Liu,
Tsukasa Inoue,
Yasumitsu Miyata,
David Tomanek,
Hisanori Shinohara
Abstract:
Atomically thin one dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synth…
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Atomically thin one dimensional (1D) van der Waals wires of transition metal monochalocogenides (TMMs) have been anticipated as promising building blocks for integrated nanoelectronics. While reliable production of TMM nanowires has eluded scientists over the past few decades, we finally demonstrated a bottom up fabrication of MoTe nanowires inside carbon nanotubes (CNTs). Still, the current synthesis method is based on vacuum annealing of reactive MoTe2, and limits access to a variety of TMMs. Here we report an expanded framework for high yield synthesis of the 1D tellurides including WTe, an unprecedented family of TMMs. Experimental and theoretical analyses revealed that the choice of suitable metal oxides as a precursor provides useful yield for their characterization. These TMM nanowires exhibit a significant optical absorption in the visible light region. More important, electronic properties of CNTs can be tuned by encapsulating different TMM nanowires.
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Submitted 22 May, 2020;
originally announced May 2020.
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Optical observation of quasiperiodic Heisenberg antiferromagnets in two dimensions
Authors:
Takashi Inoue,
Shoji Yamamoto
Abstract:
We calculate magnetic Raman spectra of Heisenberg antiferromagnets on the two-dimensional Penrose lattice. We follow the Shastry-Shraiman formulation of Raman scattering in a strongly correlated Hubbard system and obtain the second- and fourth-order effective Raman operators. The second-order Raman intensity comes from the E2 mode, and it is invariant under an arbitrary rotation of polarization ve…
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We calculate magnetic Raman spectra of Heisenberg antiferromagnets on the two-dimensional Penrose lattice. We follow the Shastry-Shraiman formulation of Raman scattering in a strongly correlated Hubbard system and obtain the second- and fourth-order effective Raman operators. The second-order Raman intensity comes from the E2 mode, and it is invariant under an arbitrary rotation of polarization vectors. The fourth-order Raman intensities consist of A1 and A2, as well as E2, modes and therefore yield strong polarization dependence. In particular, the A2 mode intensity directly detects the dynamical spin-chirality fluctuations. Employing linearly and circularly polarized lights, we can separately extract every irreducible representation from the observations. We further discuss effects of magnon-magnon interactions on the magnetic Raman scattering. Our theory provides a reasonable explanation for the two-magnon scattering process.
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Submitted 21 April, 2020;
originally announced April 2020.
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Topological band structure of surface acoustic waves on a periodically corrugated surface
Authors:
Tomohiro Inoue,
Shuichi Murakami
Abstract:
Surface acoustic waves (SAWs) are elastic waves localized on a surface of an elastic body. We theoretically study topological edge modes of SAWs for a corrugated surface. We introduce a corrugation forming a triangular lattice on the surface of an elastic body. We treat the corrugation as a perturbation, and construct eigenmodes on a corrugated surface by superposing those for the flat surface at…
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Surface acoustic waves (SAWs) are elastic waves localized on a surface of an elastic body. We theoretically study topological edge modes of SAWs for a corrugated surface. We introduce a corrugation forming a triangular lattice on the surface of an elastic body. We treat the corrugation as a perturbation, and construct eigenmodes on a corrugated surface by superposing those for the flat surface at wavevectors which are mutually different by reciprocal lattice vectors. We thereby show emergence of Dirac cones at the $K$ and $K'$ points analytically. Moreover, by breaking the time-reversal symmetry, we show that the Dirac cones open a gap, and that the Chern number for the lowest band has a nonzero value. It means existence of topological chiral edge modes of SAWs in the gap.
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Submitted 29 March, 2019; v1 submitted 6 February, 2019;
originally announced February 2019.
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One-dimensional van der Waals heterostructures
Authors:
Rong Xiang,
Taiki Inoue,
Yongjia Zheng,
Akihito Kumamoto,
Yang Qian,
Yuta Sato,
Ming Liu,
Devashish Gokhale,
Jia Guo,
Kaoru Hisama,
Satoshi Yotsumoto,
Tatsuro Ogamoto,
Hayato Arai,
Yu Kobayashi,
Hao Zhang,
Bo Hou,
Anton Anisimov,
Yasumitsu Miyata,
Susumu Okada,
Shohei Chiashi,
Yan Li,
**g Kong,
Esko I. Kauppinen,
Yuichi Ikuhara,
Kazu Suenaga
, et al. (1 additional authors not shown)
Abstract:
Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophis…
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Property by design is one appealing idea in material synthesis but hard to achieve in practice. A recent successful example is the demonstration of van der Waals (vdW) heterostructures,1-3 in which atomic layers are stacked on each other and different ingredients can be combined beyond symmetry and lattice matching. This concept, usually described as a nanoscale Lego blocks, allows to build sophisticated structures layer by layer. However, this concept has been so far limited in two dimensional (2D) materials. Here we show a class of new material where different layers are coaxially (instead of planarly) stacked. As the structure is in one dimensional (1D) form, we name it "1D vdW heterostructures". We demonstrate a 5 nm diameter nanotube consisting of three different materials: an inner conductive carbon nanotube (CNT), a middle insulating hexagonal boron nitride nanotube (BNNT) and an outside semiconducting MoS2 nanotube. As the technique is highly applicable to other materials in the current 2D libraries,4-6 we anticipate our strategy to be a starting point for discovering a class of new semiconducting nanotube materials. A plethora of function-designable 1D heterostructures will appear after the combination of CNTs, BNNTs and semiconducting nanotubes.
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Submitted 30 October, 2018; v1 submitted 16 July, 2018;
originally announced July 2018.
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Laser-beam patterned topological insulating states on thin semiconducting MoS2
Authors:
H. Mine,
A. Kobayashi,
T. Nakamura,
T. Inoue,
S. Pakdel,
E. Z. Marin,
D. Marian,
E. Gonzalez-Marin,
S. Maruyama,
S. Katsumoto,
A. Fortunelli,
J. J. Palacios,
J. Haruyama
Abstract:
Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low power dissipation. Members of the 2D transition metal dichalcogenides (TMDCs) have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conductio…
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Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low power dissipation. Members of the 2D transition metal dichalcogenides (TMDCs) have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T'-phase embedded into the 2H-phase of thin semiconducting molybdenum-disulfide (MoS2) by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T' phases.
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Submitted 2 September, 2019; v1 submitted 13 July, 2018;
originally announced July 2018.
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Enhanced Raman scattering of graphene using double resonance in silicon photonic crystal nanocavities
Authors:
W. Gomulya,
H. Machiya,
K. Kashiwa,
T. Inoue,
S. Chiashi,
S. Maruyama,
Y. K. Kato
Abstract:
We demonstrate enhancements of Raman scattering from graphene on two-dimensional photonic crystals using double resonances, which originate from simultaneous enhancements by a localized guided mode and a cavity mode. By adjusting the photonic crystal cavity parameters, the double resonance can be tuned to the G' Raman scattering. Excitation wavelength dependence measurements show a large Raman pea…
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We demonstrate enhancements of Raman scattering from graphene on two-dimensional photonic crystals using double resonances, which originate from simultaneous enhancements by a localized guided mode and a cavity mode. By adjusting the photonic crystal cavity parameters, the double resonance can be tuned to the G' Raman scattering. Excitation wavelength dependence measurements show a large Raman peak enhancement when the excitation and emission wavelengths meet the double resonance condition. Furthermore, spatial imaging measurements are performed to confirm that the enhancement is localized at the cavity, and we find that the enhanced Raman intensity is 60 times larger compared to the on-substrate Raman signal. The observed cavity enhancement of Raman scattering opens up new possibilities for the development of graphene-based light sources for silicon photonics.
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Submitted 6 June, 2018;
originally announced June 2018.
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Spin pum** into two-dimensional electron systems
Authors:
Takuya Inoue,
Gerrit E. W. Bauer,
Kentaro Nomura
Abstract:
We study the spin current injected by spin pum** into single layer graphene and the two-dimensional electron gas (2DEG) with ferromagnetic contacts using scattering theory. The spin currents pumped into graphene are very distinct from that into the 2DEG since importantly affected by Klein tunneling.
We study the spin current injected by spin pum** into single layer graphene and the two-dimensional electron gas (2DEG) with ferromagnetic contacts using scattering theory. The spin currents pumped into graphene are very distinct from that into the 2DEG since importantly affected by Klein tunneling.
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Submitted 29 September, 2016;
originally announced September 2016.
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Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
Authors:
Muhammad Usman,
Tomoya Inoue,
Yukihiro Harda,
Gerhard Klimeck,
Takashi Kita
Abstract:
Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simul…
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Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simulations. The atomistic modeling and simulations allow us to include correct symmetry properties in the calculations of the optical spectra: a factor critical to explain the experimental evidence. The values of the degree of polarization (DOP) calculated from our model follows the trends of the experimental data. We also present detailed physical insight by examining strain profiles, band edges diagrams and wave function plots. Multi-directional PL measurements and calculations of the DOP reveal a unique property of InAs quantum dot stacks that the TE response is anisotropic in the plane of the stacks. Therefore a single value of the DOP is not sufficient to fully characterize the polarization response. We explain this anisotropy of the TE-modes by orientation of hole wave functions along the [-110] direction. Our results provide a new insight that isotropic polarization response measured in the experimental PL spectra is due to two factors: (i) TM[001]-mode contributions increase due to enhanced intermixing of HH and LH bands, and (ii) TE[110]-mode contributions reduce significantly due to hole wave function alignment along the [-110] direction. We also present optical spectra for various geometry configurations of quantum dot stacks to provide a guide to experimentalists for the design of multi-layer QD stacks for optical devices. Our results predict that the QD stacks with identical layers will exhibit lower values of the DOP than the stacks with non-identical layers.
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Submitted 2 June, 2011;
originally announced June 2011.
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Magnetic Properties of a Pressure-induced Superconductor UGe$_2$
Authors:
N. Tateiwa,
K. Hanazono,
T. C. Kobayashi,
K. Amaya,
T. Inoue,
K. Kindo,
Y. Koike,
N. Metoki,
Y. Haga,
R. Settai,
Y. Onuki
Abstract:
We performed the DC-magnetization and neutron scattering experiments under pressure {\it P} for a pressure-induced superconductor UGe$_2$. We found that the magnetic moment is enhanced at a characteristic temperature {\it T}$^{*}$ in the ferromagnetic state, where {\it T}$^{*}$ is smaller than a Curie temperature {\it T}$_{\rm C}$. This enhancement becomes remarkable in the vicinity of {\it P}…
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We performed the DC-magnetization and neutron scattering experiments under pressure {\it P} for a pressure-induced superconductor UGe$_2$. We found that the magnetic moment is enhanced at a characteristic temperature {\it T}$^{*}$ in the ferromagnetic state, where {\it T}$^{*}$ is smaller than a Curie temperature {\it T}$_{\rm C}$. This enhancement becomes remarkable in the vicinity of {\it P}$_{\rm C}^{*}$ = 1.20 GPa, where {\it T}$^{*}$ becomes 0 K and the superconducting transition temperature {\it T}$_{\rm SC}$ shows a maximum. The characteristic temperature {\it T}$^{*}$, which decreases with increasing pressure, also depends on the magnetic field.
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Submitted 3 July, 2001;
originally announced July 2001.
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Intrinsic Resistivity via Quantum Nucleation of Phase Slips in a One-Dimensional Josephson Junction Array
Authors:
T. Inoue,
M. Nishida,
S. Kurihara
Abstract:
The resistivity of a one-dimensional Josephson junction array at zero temperature is calculated by estimating the nucleation rate of quantum phase slips. We choose a certain collective coordinate which describes the nucleation process and estimate the corresponding effective mass. In the strong coupling regime, where Josephson coupling energy exceeds the charging energy, we calculate the nucleat…
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The resistivity of a one-dimensional Josephson junction array at zero temperature is calculated by estimating the nucleation rate of quantum phase slips. We choose a certain collective coordinate which describes the nucleation process and estimate the corresponding effective mass. In the strong coupling regime, where Josephson coupling energy exceeds the charging energy, we calculate the nucleation rate by means of WKB method. Our estimation is in good agreement with recent experimental data. The superconductor-insulator transition point is also discussed.
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Submitted 23 March, 1999;
originally announced March 1999.
