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Spin splitting and strain in epitaxial monolayer WSe$_2$ on graphene
Authors:
H. Nakamura,
A. Mohammed,
P. Rosenzweig,
K. Matsuda,
K. Nowakowski,
K. Küster,
P. Wochner,
S. Ibrahimkutty,
U. Wedig,
H. Hussain,
J. Rawle,
C. Nicklin,
B. Stuhlhofer,
G. Cristiani,
G. Logvenov,
H. Takagi,
U. Starke
Abstract:
We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was $Δ_\mathrm{SO}=0.469\pm0.008$ eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plan…
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We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was $Δ_\mathrm{SO}=0.469\pm0.008$ eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer WSe$_{2}$ to be $a_\mathrm{WSe_2}=3.2757\pm0.0008 \mathrm{Å}$. This indicates a lattice compression of -0.19 % from bulk WSe$_{2}$. By using experimentally determined graphene lattice constant ($a_\mathrm{MLG}=2.4575\pm0.0007 \mathrm{Å}$), we found that a 3$\times$3 unit cell of the slightly compressed WSe$_{2}$ is perfectly commensurate with a 4$\times$4 graphene lattice with a mismatch below 0.03 %, which could explain why the monolayer WSe$_{2}$ is compressed on MLG. From XRD and first-principles calculations, however, we conclude that the observed size of strain is negligibly small to account for a discrepancy in $Δ_\mathrm{SO}$ found between exfoliated and epitaxial monolayers in earlier ARPES. In addition, angle-resolved, ultraviolet and X-ray photoelectron spectroscopy shed light on the band alignment between WSe$_{2}$ and MLG/SiC and indicate electron transfer from graphene to the WSe$_{2}$ monolayer. As further revealed by atomic force microscopy, the WSe$_{2}$ island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of WSe$_{2}$ favors the weak van der Waals interactions with graphene while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.
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Submitted 10 December, 2019;
originally announced December 2019.
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Tailoring the electronic properties of Ca$_2$RuO$_4$ via epitaxial strain
Authors:
C. Dietl,
S. K. Sinha,
G. Christiani,
Y. Khaydukov,
T. Keller,
D. Putzky,
S. Ibrahimkutty,
P. Wochner,
G. Logvenov,
P. A. van Aken,
B. J. Kim,
B. Keimer
Abstract:
We report the synthesis of Ca$_2$RuO$_4$ thin films on NdCaAlO$_{4}$ (110), LaAlO$_3$ (100) and LaSrAlO$_4$ (001) substrates and show that epitaxial strain induces a transition from the Mott-insulating phase of bulk Ca$_2$RuO$_4$ into a metallic phase. Magnetometry and spin-polarized neutron reflectometry reveal a low-temperature, small-moment ferromagnetic state in metallic Ca$_2$RuO$_4$ films.
We report the synthesis of Ca$_2$RuO$_4$ thin films on NdCaAlO$_{4}$ (110), LaAlO$_3$ (100) and LaSrAlO$_4$ (001) substrates and show that epitaxial strain induces a transition from the Mott-insulating phase of bulk Ca$_2$RuO$_4$ into a metallic phase. Magnetometry and spin-polarized neutron reflectometry reveal a low-temperature, small-moment ferromagnetic state in metallic Ca$_2$RuO$_4$ films.
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Submitted 4 October, 2017;
originally announced October 2017.
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Perovskite Substrates Boost the Thermopower of Cobaltate Thin Films at High Temperatures
Authors:
P. Yordanov,
P. Wochner,
S. Ibrahimkutty,
C. Dietl,
F. Wrobel,
R. Felici,
G. Gregori,
J. Maier,
B. Keimer,
H. -U. Habermeier
Abstract:
Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power factors are limited by the low electrical conductivity. We report transport measurements on Ca3Co4O9 films on various perovskite substrates and show that rever…
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Transition metal oxides are promising candidates for thermoelectric applications, because they are stable at high temperature and because strong electronic correlations can generate large Seebeck coefficients, but their thermoelectric power factors are limited by the low electrical conductivity. We report transport measurements on Ca3Co4O9 films on various perovskite substrates and show that reversible incorporation of oxygen into SrTiO3 and LaAlO3 substrates activates a parallel conduction channel for p-type carriers, greatly enhancing the thermoelectric performance of the film-substrate system at temperatures above 450 °C. Thin-film structures that take advantage of both electronic correlations and the high oxygen mobility of transition metal oxides thus open up new perspectives for thermopower generation at high temperature.
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Submitted 25 April, 2017;
originally announced April 2017.
