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Experimental evidence of crystal-field, Zeeman splitting, and spin-phonon excitations in the quantum supersolid Na2BaCo(PO4)2
Authors:
Ghulam Hussain,
Jianbo Zhang,
Man Zhang,
Lalit Yadav,
Yang Ding,
Sara Haravifard,
Changcheng Zheng,
Xiawa Wang
Abstract:
Drawing inspiration from the recent breakthroughs in the \ce{Na_{2}BaCo(PO_{4})_{2}} quantum magnet, renowned for its spin supersolidity phase and its potential for revolutionary cooling applications, our study delves into the intricate interplay among lattice, spin, and orbital degrees of freedom within this intriguing compound. Using meticulous temperature, field, and pressure-dependent Raman sc…
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Drawing inspiration from the recent breakthroughs in the \ce{Na_{2}BaCo(PO_{4})_{2}} quantum magnet, renowned for its spin supersolidity phase and its potential for revolutionary cooling applications, our study delves into the intricate interplay among lattice, spin, and orbital degrees of freedom within this intriguing compound. Using meticulous temperature, field, and pressure-dependent Raman scattering techniques, we present compelling experimental evidence revealing pronounced crystal-electric field (CEF) excitations, alongside the interplay of CEF-phonon interactions. Notably, our experiments elucidate all electronic transitions from $j_{1 / 2}$ to $j_{3 / 2}$ and from $j_{1 / 2}$ to $j_{5 / 2}$, with energy level patterns closely aligned with theoretical predictions based on point-charge models. Furthermore, the application of a magnetic field and pressure reveals Zeeman splittings characterized by Landé-g factors as well as the CEF-phonon resonances. The anomalous shift in coupled peak at low temperatures originates from the hybridization of CEF and phonon excitations due to their close energy proximity. These findings constitute a significant step towards unraveling the fundamental properties of this exotic quantum material for future research in fundamental physics or engineering application.
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Submitted 18 June, 2024; v1 submitted 31 May, 2024;
originally announced May 2024.
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Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
Authors:
Ghulam Hussain,
Giuseppe Cuono,
Piotr Dziawa,
Dorota Janaszko,
Janusz Sadowski,
Slawomir Kret,
Boguslawa Kurowska,
Jakub Polaczynski,
Kinga Warda,
Shahid Sattar,
Carlo M. Canali,
Alexander Lau,
Wojciech Brzezicki,
Tomasz Story,
Carmine Autieri
Abstract:
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w…
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We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.
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Submitted 17 May, 2024; v1 submitted 7 January, 2024;
originally announced January 2024.
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Dirac surface states, multiorbital dimerization and superconductivity in Nb- and Ta-based A15 compounds
Authors:
Raghottam M. Sattigeri,
Giuseppe Cuono,
Ghulam Hussain,
Xing Ming,
Angelo Di Bernardo,
Carmine Attanasio,
Mario Cuoco,
Carmine Autieri
Abstract:
Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level en…
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Using first-principle calculations, we investigate the electronic, topological and superconducting properties of Nb$_3$X (X = Ge, Sn, Sb) and Ta$_3$Y (Y = As, Sb, Bi) A15 compounds. We demonstrate that these compounds host Dirac surface states which are related to a nontrivial Z$_2$ topological value. The spin-orbit coupling (SOC) splits the eightfold degenerate R point close to the Fermi level enhancing the amplitude of the spin Hall conductance. Indeed, despite the moderate spin-orbit of the Nb-compounds, a large spin Hall effect is also obtained in Nb$_3$Ge and Nb$_3$Sn compounds. We show that the Coulomb interaction opens the gap at the R point thus making more evident the occurrence of Dirac surface states. We then investigate the superconducting properties by determining the strength of the electron-phonon BCS coupling. The evolution of the critical temperature is tracked down to the 2D limit indicating a reduction of the transition temperature which mainly arises from the suppression of the density of states at the Fermi level. Finally, we propose a minimal tight-binding model based on three coupled Su-Schrieffer-Heeger chains with t$_{2g}$ Ta- and Nb-orbitals reproducing the spin-orbit splittings at the R point among the $π$-bond bands in this class of compounds. We separate the kinetic parameters in $π$ and $δ$-bonds, in intradimer and interdimer hop**s and discuss their relevance for the topological electronic structure. We point out that Nb$_3$Ge might represent a Z$_2$ topological metal with the highest superconducting temperature ever recorded.
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Submitted 30 October, 2023; v1 submitted 27 October, 2023;
originally announced October 2023.
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Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states
Authors:
Ghulam Hussain,
Kinga Warda,
Giuseppe Cuono,
Carmine Autieri
Abstract:
We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, the…
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We investigate the electronic, structural and topological properties of the SnTe and PbTe cubic nanowires using ab-initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowires thicknesses observed experimentally. Finite-size effects in the ultra-thin limit produce an electric quadrupole and associated structural distortions, these distortions increase the band gap but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators, we demonstrate that by increasing the thickness there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulating phase with the presence of two massive surface Dirac fermions hybridized with the persisting trivial surface states. Therefore, we have the co-presence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1=10 nm, and they become spin-orbit insulators between tc1=10 nm and tc2=17 nm, while they transit to the topological phase above the critical thickness of tc2=17 nm. These critical thickness values are in the range of the typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb(1-x)Sn(x)Te nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the do** concentration.
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Submitted 29 August, 2023;
originally announced August 2023.
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Topological phase diagram of Pb1-xSnxSe1-yTey
Authors:
Giuseppe Cuono,
Ghulam Hussain,
Amar Fakhredine,
Carmine Autieri
Abstract:
We reproduce the mirror Chern number phase diagram for the quaternary compound Pb1-xSnxSe1-yTey combining accurate density functional theory and tight-biding model. The tight binding models are extracted from ab-initio results, adding constraints to reproduce the experimental results. By using the virtual crystalline approximation, we calculated the mirror Chern number as a function of the concent…
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We reproduce the mirror Chern number phase diagram for the quaternary compound Pb1-xSnxSe1-yTey combining accurate density functional theory and tight-biding model. The tight binding models are extracted from ab-initio results, adding constraints to reproduce the experimental results. By using the virtual crystalline approximation, we calculated the mirror Chern number as a function of the concentrations x and y. We report different hamiltonians depending on whether we want to focus on the experimental band gap or on the experimental topological transition. We calculate the transition line between the trivial insulating phase and topological insulating phase that results in good agreement with the experimental results. Finally, we add in the phase diagram the Weyl phase predicted in the literature providing a complete topological phase diagram for the Pb1-xSnxSe1-yTey quaternary compound.
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Submitted 13 February, 2023;
originally announced February 2023.
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Correlation-driven topological transition in Janus VSiGeP2As2
Authors:
Ghulam Hussain,
Amar Fakhredine,
Rajibul Islam,
Raghottam M. Sattigeri,
Carmine Autieri,
Giuseppe Cuono
Abstract:
The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the s…
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The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z=P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), while in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials.
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Submitted 14 February, 2023; v1 submitted 10 February, 2023;
originally announced February 2023.
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Fast electrically switchable large gap quantum spin Hall states in MGe$_2$Z$_4$
Authors:
Rajibul Islam,
Ghulam Hussain,
Rahul Verma,
Mohammad Sadegh Talezadehlari,
Zahir Muhammad,
Bahadur Singh,
Carmine Autieri
Abstract:
Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast s…
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Spin-polarized conducting edge currents counterpropagate in quantum spin Hall (QSH) insulators and are protected against disorder-driven localizations by the time-reversal symmetry. Using these spin-currents for device applications require materials having large band gap and fast switchable QSH states. By means of in-depth first-principles calculations, we demonstrate the large band gap and fast switchable QSH state in a newly introduced two-dimensional (2D) material family with 1T$^\prime$-MGe$_2$Z$_4$ (M = Mo or W and Z = P or As). The thermodynamically stable 1T$^\prime$-MoGe$_2$Z$_4$ monolayers have a large energy gap around $\sim$237 meV. These materials undergo a phase transition from a QSH insulator to a trivial insulator with a Rashba-like spin splitting under the influence of an out-of-plane electric field, demonstrating the tunability of the band gap and its band topology. Fast topological phase switching in a large gap 1T$^\prime$-MoGe$_2$Z$_4$ QSH insulators has potential applications in low-power devices, quantum computation, and quantum communication.
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Submitted 13 April, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
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Strain Modulated Electronic and Optical Properties of Laterally Stitched MoSi2N4/XSi2N4 (X=W, Ti) 2D Heterostructures
Authors:
Ghulam Hussain,
Mumtaz Manzoor,
Muhammad Waqas Iqbal,
Imran Muhammad,
Asadollah Bafekry,
Hamid Ullah,
Carmine Autieri
Abstract:
We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.…
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We used first-principles calculations to investigate the laterally stitched monolayered MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures. The structural stability of such heterostructures is confirmed by the phonon spectra exhibiting no negative frequencies. From the electronic band structures, the MoSi2N4/WSi2N4-lateral heterostructure (MWLH) shows semiconducting nature with an indirect bandgap of 2.35 eV, while the MoSi2N4/TiSi2N4-lateral heterostructure (MTLH) revealed metallic behavior. Moreover, the effect of biaxial strain on the electronic and optical properties of MWLH is studied, which indicated substantial modifications in their electronic and optical spectra. In particular, an indirect to direct bandgap semiconducting transition can be achieved in MWLH via compressive strain. Besides, the absorbance, transmittance and reflectance spectra can effectively be tuned by means of biaxial strain. Our findings provide insights into the strain engineering of electronic and optical features, which could pave the way for future nano- and optoelectronic applications.
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Submitted 20 June, 2022; v1 submitted 18 May, 2022;
originally announced May 2022.
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Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors
Authors:
Ghulam Hussain,
Giuseppe Cuono,
Rajibul Islam,
Artur Trajnerowicz,
Jarosław Jureńczyk,
Carmine Autieri,
Tomasz Dietl
Abstract:
We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and…
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We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the k$_x$-k$_y$ plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly 5p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors.
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Submitted 18 March, 2022; v1 submitted 11 March, 2022;
originally announced March 2022.
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Exploring the Structural Stability, Electronic and Thermal Attributes of synthetic 2D Materials and their Heterostructures
Authors:
Ghulam Hussain,
Mazia Asghar,
Muhammad Waqas Iqbal,
Hamid Ullah,
Carmine Autieri
Abstract:
Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra…
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Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra. The XSi2N4 (X= Ti, Mo, W) monolayers, the TiSi2N4/MoSi2N4-LH, MoSi2N4/WSi2N4-LH, and MoSi2N4/WSi2N4-VH possess a semiconducting nature with an indirect band gap ranging from 0.30 to 2.60 eV. At room temperature, the Cv values are found to be between 100 and 416 J/K.mol for the monolayers and their heterostructures, suggesting the better ability to retain heat with respect to transition metal dichalcogenides. Our study unveils the excellent attributes of XSi2N4 2D monolayers and their heterostructures, proposing them as potential candidates in nanoelectronics and thermoelectric applications.
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Submitted 26 January, 2022;
originally announced January 2022.
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Survival of itinerant excitations and quantum spin state transitions in YbMgGaO$_4$ with chemical disorder
Authors:
X. Rao,
G. Hussain,
Q. Huang,
W. J. Chu,
N. Li,
X. Zhao,
Z. Dun,
E. S. Choi,
T. Asaba,
L. Chen,
L. Li,
X. Y. Yue,
N. N. Wang,
J. -G. Cheng,
Y. H. Gao,
Y. Shen,
J. Zhao,
G. Chen,
H. D. Zhou,
X. F. Sun
Abstract:
A recent focus of quantum spin liquid (QSL) studies is how disorder/randomness in a QSL candidate affects its true magnetic ground state. The ultimate question is whether the QSL survives disorder or the disorder leads to a "spin-liquid-like" state, such as the proposed random-singlet (RS) state. Since disorder is a standard feature of most QSL candidates, this question represents a major challeng…
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A recent focus of quantum spin liquid (QSL) studies is how disorder/randomness in a QSL candidate affects its true magnetic ground state. The ultimate question is whether the QSL survives disorder or the disorder leads to a "spin-liquid-like" state, such as the proposed random-singlet (RS) state. Since disorder is a standard feature of most QSL candidates, this question represents a major challenge for QSL candidates. YbMgGaO$_4$, a triangular lattice antiferromagnet with effective spin-1/2 Yb$^{3+}$ ions, is an ideal system to address this question, since it shows no long-range magnetic ordering with Mg/Ga site disorder. Despite the intensive study, it remains unresolved as to whether YbMgGaO$_4$ is a QSL or in the RS state. Here, through ultralow-temperature thermal conductivity and magnetic torque measurements, plus specific heat and DC magnetization data, we observed a residual $κ_0/T$ term and series of quantum spin state transitions in the zero temperature limit for YbMgGaO$_4$. These observations strongly suggest that a QSL state with itinerant excitations and quantum spin fluctuations survives disorder in YbMgGaO$_4$.
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Submitted 4 July, 2021;
originally announced July 2021.
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Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$
Authors:
X. Rao,
X. Zhao,
X. -Y. Wang,
H. L. Che,
L. G. Chu,
G. Hussain,
T. -L. Xia,
X. F. Sun
Abstract:
We report a study of thermal conductivity and resistivity at ultra-low temperatures and in high magnetic fields for semi-metal materials TaAs$_2$ and NbAs$_2$ by using single crystal samples. The thermal conductivity is strongly suppressed in magnetic fields, having good correspondence with the large positive magnetoresistance, which indicates a dominant electronic contribution to thermal conducti…
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We report a study of thermal conductivity and resistivity at ultra-low temperatures and in high magnetic fields for semi-metal materials TaAs$_2$ and NbAs$_2$ by using single crystal samples. The thermal conductivity is strongly suppressed in magnetic fields, having good correspondence with the large positive magnetoresistance, which indicates a dominant electronic contribution to thermal conductivity. In addition, not only the resistivity but also the thermal conductivity display clear quantum oscillations behavior at subKelvin temperatures and in magnetic fields up to 14 T. The most striking phenomenon is that the thermal conductivity show a $T^4$ behavior at very low temperatures, while the resistivity show a $T$-independent behavior. This indicates a strong violation of the Weidemann-Franz law and points to a non-Feimi liquid state of these materials.
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Submitted 18 June, 2019; v1 submitted 10 June, 2019;
originally announced June 2019.
