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Non-volatile spin transport in a single domain multiferroic
Authors:
Sajid Husain,
Isaac Harris,
Peter Meisenheimer,
Sukriti Mantri,
Xinyan Li,
Maya Ramesh,
Piush Behera,
Hossein Taghinejad,
Jaegyu Kim,
Pravin Kavle,
Shiyu Zhou,
Tae Yeon Kim,
Hongrui Zhang,
Paul Stephenson,
James G. Analytis,
Darrell Schlom,
Sayeef Salahuddin,
Jorge Íñiguez-González,
Bin Xu,
Lane W. Martin,
Lucas Caretta,
Yimo Han,
Laurent Bellaiche,
Zhi Yao,
Ramamoorthy Ramesh
Abstract:
Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO$_3$ the coupling between antiferromagnetic and polar order imposes yet another boun…
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Antiferromagnets have attracted significant attention in the field of magnonics, as promising candidates for ultralow-energy carriers for information transfer for future computing. The role of crystalline orientation distribution on magnon transport has received very little attention. In multiferroics such as BiFeO$_3$ the coupling between antiferromagnetic and polar order imposes yet another boundary condition on spin transport. Thus, understanding the fundamentals of spin transport in such systems requires a single domain, a single crystal. We show that through Lanthanum(La) substitution, a single ferroelectric domain can be engineered with a stable, single-variant spin cycloid, controllable by an electric field. The spin transport in such a single domain displays a strong anisotropy, arising from the underlying spin cycloid lattice. Our work shows a pathway to understand the fundamental origins of spin transport in such a single domain multiferroic.
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Submitted 6 April, 2024;
originally announced April 2024.
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Designed spin-texture-lattice to control anisotropic magnon transport in antiferromagnets
Authors:
Peter Meisenheimer,
Maya Ramesh,
Sajid Husain,
Isaac Harris,
Hyeon Woo Park,
Shiyu Zhou,
Hossein Taghinejad,
Hongrui Zhang,
Lane W. Martin,
James Analytis,
Paul Stevenson,
Jorge Íñiguez-González,
Se Kwon Kim,
Darrell G. Schlom,
Lucas Caretta,
Zhi Yao,
Ramamoorthy Ramesh
Abstract:
Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to their stability to external fields and larger group velocities. Multiferroic aniferromagnets, such as BiFeO$_3$ (BFO), have an additional degree of freedom stemming…
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Spin waves in magnetic materials are promising information carriers for future computing technologies due to their ultra-low energy dissipation and long coherence length. Antiferromagnets are strong candidate materials due, in part, to their stability to external fields and larger group velocities. Multiferroic aniferromagnets, such as BiFeO$_3$ (BFO), have an additional degree of freedom stemming from magnetoelectric coupling, allowing for control of the magnetic structure, and thus spin waves, with electric field. Unfortunately, spin-wave propagation in BFO is not well understood due to the complexity of the magnetic structure. In this work, we explore long-range spin transport within an epitaxially engineered, electrically tunable, one-dimensional (1D) magnonic crystal. We discover a striking anisotropy in the spin transport parallel and perpendicular to the 1D crystal axis. Multiscale theory and simulation suggests that this preferential magnon conduction emerges from a combination of a population imbalance in its dispersion, as well as anisotropic structural scattering. This work provides a pathway to electrically-reconfigurable magnonic crystals in antiferromagnets.
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Submitted 19 February, 2024;
originally announced February 2024.
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Persistent anisotropy of the spin cycloid in BiFeO3 through ferroelectric switching
Authors:
Peter Meisenheimer,
Guy Moore,
Shiyu Zhou,
Hongrui Zhang,
Xiaoxi Huang,
Sajid Husain,
Xianzhe Chen,
Lane W. Martin,
Kristin A. Persson,
Sinéad Griffin,
Lucas Caretta,
Paul Stevenson,
Ramamoorthy Ramesh
Abstract:
A key challenge in antiferromagnetic spintronics is the control of spin configuration on nanometer scales applicable to solid-state technologies. Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic momen…
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A key challenge in antiferromagnetic spintronics is the control of spin configuration on nanometer scales applicable to solid-state technologies. Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic moments in BiFeO3 are arranged into a spin cycloid, resulting in unique magnetic properties which are tied to the ferroelectric order. Previous understanding of this coupling has relied on average, mesoscale measurements to infer behavior. Using nitrogen vacancy-based diamond magnetometry, we show that the spin cycloid can be deterministically controlled with an electric field. The energy landscape of the cycloid is shaped by both the ferroelectric degree of freedom and strain-induced anisotropy, restricting the magnetization changes to specific ferroelectric switching events. This study provides understanding of the antiferromagnetic texture in BiFeO3 and paves new avenues for designing magnetic textures and spintronic devices.
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Submitted 16 November, 2023;
originally announced November 2023.
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Giant spin-orbit torque efficiency in all-epitaxial heterostructures
Authors:
Nilamani Behera,
Rahul Gupta,
Sajid Husain,
Jitendra Saha,
Rajasekhar Pothala,
Vineet Barwal,
Vireshwar Mishra,
Gabriella Andersson,
Dinesh K. Pandya,
Sujeet Chaudhary,
Rimantas Brucas,
Peter Svedlindh,
Ankit Kumar
Abstract:
A large anti-dam** spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-dam** torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96…
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A large anti-dam** spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fields generated by anti-dam** torques when an electric current is passed through the non-magnetic layer. We report a giant spin-orbit field of 48.96 (27.50) mT at an applied current density of 1 MAcm-2 in beta-W interfaced Co60Fe40 (Ni81Fe19)/TiN epitaxial structures due to an anti-dam** like torque, which results in a magnetization auto-oscillation current density as low as 1.68(3.27) MAcm-2. The spin-orbit field value increases with decrease of beta-W layer thickness, which affirms that epitaxial surface states are responsible for the extraordinary large efficiency. SOT induced energy efficient in-plane magnetization switching in large 20x100 um2 structures has been demonstrated by Kerr microscopy and the findings are supported by results from micromagnetic simulations. The observed giant SOT efficiencies in the studied all-epitaxial heterostructures are comparable to values reported for topological insulators. These results confirm that by utilizing epitaxial material combinations an extraordinary large SOT efficiency can be achieved using semiconducting industry compatible 5d heavy metals, which provides immediate solutions for the realization of energy efficient spin-logic devices.
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Submitted 19 April, 2021;
originally announced April 2021.
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Co$_2$FeAl full Heusler compound based spintronic terahertz emitter
Authors:
Rahul Gupta,
Sajid Husain,
Ankit Kumar,
Rimantas Brucas,
Anders Rydberg,
Peter Svedlindh
Abstract:
To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose their half-metallicity in the ultrathin film regime, as it is difficult to achieve L2$_1$ ordering, which has become a bottleneck for the film growth. Here, th…
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To achieve a large terahertz (THz) amplitude from a spintronic THz emitter (STE), materials with 100\% spin polarisation such as Co-based Heusler compounds as the ferromagnetic layer are required. However, these compounds are known to loose their half-metallicity in the ultrathin film regime, as it is difficult to achieve L2$_1$ ordering, which has become a bottleneck for the film growth. Here, the successful deposition using room temperature DC sputtering of the L2$_1$ and B2 ordered phases of the Co$_2$FeAl full Heusler compound is reported. Co$_2$FeAl is used as ferromagnetic layer together with highly orientated Pt as non-ferromagnetic layer in the Co$_2$FeAl/Pt STE, where an MgO(10 nm) seed layer plays an important role to achieve the L2$_1$ and B2 ordering of Co$_2$FeAl. The generation of THz radiation in the CFA/Pt STE is presented, which has a bandwidth in the range of 0.1-4 THz. The THz electric field amplitude is optimized with respect to thickness, orientation, and growth parameters using a thickness dependent model considering the optically induced spin current, superdiffusive spin current, inverse spin Hall effect and the attenuation of THz radiation in the layers. This study, based on the full Heusler Co$_2$FeAl compound opens up a plethora possibilities in STE research involving full Heusler compounds.
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Submitted 26 January, 2021;
originally announced January 2021.
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Dam**-like Torque in Monolayer 1T-TaS$_2$
Authors:
Sajid Husain,
Xin Chen,
Rahul Gupta,
Nilamani Behera,
Prabhat Kumar,
Tomas Edvinsson,
Felipe Garcia Sanchez,
Rimantas Brucas,
Sujeet Chaudhary,
Biplab Sanyal,
Peter Svedlindh,
Ankit Kumar
Abstract:
A dam**-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$…
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A dam**-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the dam**-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large dam**-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of dam**-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.
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Submitted 6 April, 2020;
originally announced April 2020.
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Ultrafast magnetization dynamics in half-metallic Co$_2$FeAl Heusler alloy
Authors:
R. S. Malik,
E. K. Delczeg-Czirjak,
D. Thonig,
R. Knut,
I. Vaskivskyi,
R. Gupta,
S. Jana,
R. Stefanuik,
Y. O. Kvashnin,
S. Husain,
A. Kumar,
P. Svedlindh,
J. Söderström,
O. Eriksson,
O. Karis
Abstract:
We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy $\mathrm{Co_{2}FeAl}$, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time ($τ_{M}$) in films of $\mathrm{Co_{2}FeAl}$ is almost independent…
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We report on optically induced, ultrafast magnetization dynamics in the Heusler alloy $\mathrm{Co_{2}FeAl}$, probed by time-resolved magneto-optical Kerr effect. Experimental results are compared to results from electronic structure theory and atomistic spin-dynamics simulations. Experimentally, we find that the demagnetization time ($τ_{M}$) in films of $\mathrm{Co_{2}FeAl}$ is almost independent of varying structural order, and that it is similar to that in elemental 3d ferromagnets. In contrast, the slower process of magnetization recovery, specified by $τ_{R}$, is found to occur on picosecond time scales, and is demonstrated to correlate strongly with the Gilbert dam** parameter ($α$). Our results show that $\mathrm{Co_{2}FeAl}$ is unique, in that it is the first material that clearly demonstrates the importance of the dam** parameter in the remagnetization process. Based on these results we argue that for $\mathrm{Co_{2}FeAl}$ the remagnetization process is dominated by magnon dynamics, something which might have general applicability.
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Submitted 27 February, 2020;
originally announced February 2020.
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Impact of the crystal orientation on spin-orbit torques in Fe/Pd bilayers
Authors:
Ankit Kumar,
Nilamani Behera,
Rahul Gupta,
Sajid Husain,
Henry Stopfel,
Vassilios Kapaklis,
Rimantas Brucas,
Peter Svedlindh
Abstract:
Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the dam**-li…
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Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the dam**-like torque efficiency is higher in epitaxial than in polycrystalline bilayer structures while the field-like torque is negligible in all bilayer structures. The strength of the dam**-like torque decreases with deterioration of the bilayer epitaxial quality. The present finding provides fresh insight for the enhancement of spin-orbit torques in magnetic heterostructures.
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Submitted 13 November, 2019;
originally announced November 2019.
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Spin pum** and spin torque in interfacial tailored Co2FeAl/\b{eta}-Ta layers
Authors:
Ankit Kumar,
Rahul Gupta,
Sajid Husain,
Nilamani Behera,
Soumyarup Hait,
Sujeet Chaudhary,
Rimantas Brucas,
Peter Svedlindh
Abstract:
The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pum** and s…
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The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pum** and spin-transfer torque ferromagnetic resonance measurements have been performed on Co_2FeAl/β-Ta heterostructures tailored with Cu interfacial layers. The interface tailored structure yields an enhancement of the effective spin-mixing conductance. The interface transparency and spin memory loss corrected values of the spin-mixing conductance, spin Hall angle and spin diffusion length are found to be 3.40 \pm 0.01 \times 10^{19} m^{-2}, 0.029 \pm 0.003, and 2.3 \pm 0.5 nm, respectively. Furthermore, a high current modulation of the effective dam** of around 2.1 % has been achieved at an applied current density of 1 \times 10^9 A/m^2 , which clearly indicates the potential of using this heterostructure for energy efficient control in spin devices
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Submitted 2 October, 2019; v1 submitted 2 April, 2019;
originally announced April 2019.
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Extraordinary efficient spin-orbit torque switching in (W, Ta)/epitaxial-Co60Fe40/TiN heterostructures
Authors:
Nilamani Behera,
Rahul Gupta,
Sajid Husain,
Vineet Barwal,
Dinesh K. Pandya,
Sujeet Chaudhary,
Rimantas Brucas,
Peter Svedlindh,
Ankit Kumar
Abstract:
The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21)…
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The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.
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Submitted 2 October, 2019; v1 submitted 8 March, 2019;
originally announced March 2019.
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Effect of in-situ electric field assisted growth on anti-phase boundaries in epitaxial Fe3O4 thin films on MgO
Authors:
Ankit Kumar,
Erik Wetterskog,
Erik Lewin,
Cheuk-Wai Tai,
Serkan Akansel,
Sajid Husain,
Tomas Edvinsson,
Rimantas Brucas,
Sujeet Chaudhary,
Peter Svedlindh
Abstract:
Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APB…
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Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APBs in hetero epitaxial Fe3O4(100)/MgO(100) thin films have been explored in the present work. The electric field assisted growth is found to reduce the AF interactions across APBs and as a consequence APBs free thin film like properties are obtained, which have been probed by electronic, magnetic and structural characterization. An increase in energy associated with the nucleation and/or early stage of the growth and, therefore, a corresponding increase in surface mobility of the ad-atoms play a critical role in controlling the density of APBs. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.
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Submitted 4 January, 2018;
originally announced January 2018.
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Spin Pum** in Ion-beam Sputtered Co_{2}FeAl/Mo Bilayers:Interfacial Gilbert Dam**
Authors:
Sajid Husain,
Ankit Kumar,
Vineet Barwal,
Nilamani Behera,
Serkan Akansel,
Sujeet Chaudhary,
Peter Svedlindh
Abstract:
The spin pum** mechanism and associated interfacial Gilbert dam** are demonstrated in ion-beam sputtered Co2FeAl (CFA) /Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert dam** are reported. The experimental data has been analyzed using…
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The spin pum** mechanism and associated interfacial Gilbert dam** are demonstrated in ion-beam sputtered Co2FeAl (CFA) /Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert dam** are reported. The experimental data has been analyzed using spin pum** theory in terms of spin current pumped through the ferromagnet /nonmagnetic metal interface to deduce the effective spin mixing conductance and the spin-diffusion length, which are estimated to be 1.16(0.19)x10^19 m^-2 and 3.50(0.35)nm, respectively. The dam** constant is found to be 8.4(0.3)x10^-3 in the Mo(3.5nm) capped CFA(8nm) sample corresponding to a ~42% enhancement of the original Gilbert dam** (6.0(0.3)x10^-3) in the uncapped CFA layer. This is further confirmed by inserting a Cu dusting layer which reduces the spin transport across the CFA /Mo interface. The Mo layer thickness dependent net spin current density is found to lie in the range of 1-3 MAm^-2, which also provides additional quantitative evidence of spin pum** in this bilayer thin film system.
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Submitted 20 November, 2017;
originally announced November 2017.
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Temperature-dependent Gilbert dam** of Co2FeAl thin films with different degree of atomic order
Authors:
Ankit Kumar,
Fan Pan,
Sajid Husain,
Serkan Akansel,
Rimantas Brucas,
Lars Bergqvist,
Sujeet Chaudhary,
Peter Svedlindh
Abstract:
Half-metallicity and low magnetic dam** are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert dam** i…
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Half-metallicity and low magnetic dam** are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert dam** in these systems. Here we present a study of the temperature dependent Gilbert dam** of differently ordered as-deposited Co2FeAl full Heusler alloy thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states govern the Gilbert dam** for the well-ordered phase in contrast to the dam** of partially-ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room temperature intrinsic dam** observed for the well-ordered phase provide new fundamental insights to the physical origin of the Gilbert dam** in full Heusler alloy thin films.
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Submitted 1 September, 2017; v1 submitted 14 June, 2017;
originally announced June 2017.
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Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Films
Authors:
Sajid Husain,
Naveen Sisodia,
Avinash Kumar Chaurasiya,
Ankit Kumar,
Serkan Akanse,
Anjan Barman,
P. K. Mudulli,
Peter Svedlindh,
Sujeet Chaudhary
Abstract:
Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magneti…
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Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magnetic force microscopy. The skyrmions are observed in a trilayer structure comprised of heavy metal (HM)/ferromagnet (FM)/Oxide interfaces which result in strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable choices of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results open up a new paradigm for designing room temperature spintronic devices based on skyrmions in FM continuous thin films.
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Submitted 29 March, 2017;
originally announced March 2017.
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Investigating resonance energy transfer from protein molecules to van der Waals nanosheets
Authors:
Arun Singh Patel,
Praveen Mishra,
Pawan K. Kanaujia,
Syed Shariq Husain,
G. Vijaya Prakash,
Anirban Chakraborti
Abstract:
The resonance energy transfer (RET) from tryptophan present in bovine serum albumin (BSA) to two dimensional (2D) nanomaterials has been reported. In these bio-nano systems, BSA molecules act as efficient donors while 2D van der Waals nanosheets of graphene, molybdenum disulfide (Mo$S_2$) and tungsten disulfide (W$S_2$) act as acceptors. The fluorescence emission from tryptophan arises at 350 nm,…
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The resonance energy transfer (RET) from tryptophan present in bovine serum albumin (BSA) to two dimensional (2D) nanomaterials has been reported. In these bio-nano systems, BSA molecules act as efficient donors while 2D van der Waals nanosheets of graphene, molybdenum disulfide (Mo$S_2$) and tungsten disulfide (W$S_2$) act as acceptors. The fluorescence emission from tryptophan arises at 350 nm, in presence of 2D nanosheets, the fluorescence intensity of BSA decreases. The time resolved fluorescence study shows that there is decrease in the fluorescence lifetime of BSA molecules in presence of 2D nanosheets. The decrease in fluorescence lifetime of BSA confirms the energy transfer phenomenon in bio-nano interactions. This study is important for finding the bio-compatibility of 2D nanomaterials in biological applications.
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Submitted 22 November, 2016;
originally announced November 2016.
