Showing 1–5 of 5 results for author: Huo, D

Alternating-Chiral Charge Density Waves and Hybrid Ferrimagnetism in Monolayered NbTe2

Authors: Yusong Bai, Guohua Cao, **ghao Deng, Haomin Fei, Xiaoyu Lin, Leiqiang Li, Chao Zhu, Zemin Pan, Tao Jian, Da Huo, Zhengbo Cheng, Chih-Kang Shih, ** Cui, Chendong Zhang, Zhenyu Zhang

Abstract: Intertwining of different quantum degrees of freedom manifests exotic quantum phenomena in many-body systems, especially in reduced dimensionality. Here we show that monolayered NbTe2 serves as an ideal platform where lattice, charge, and spin degrees of freedom manifest cooperatively, leading to a new and threading order of chirality. By using spin-polarized scanning tunneling microscopy/spectros… ▽ More Intertwining of different quantum degrees of freedom manifests exotic quantum phenomena in many-body systems, especially in reduced dimensionality. Here we show that monolayered NbTe2 serves as an ideal platform where lattice, charge, and spin degrees of freedom manifest cooperatively, leading to a new and threading order of chirality. By using spin-polarized scanning tunneling microscopy/spectroscopy, we reveal that the root19 * root19 phase of NbTe2 is encoded with both alternating-chiral atomic displacements and charge density waves, characterized by two chiral units of opposite handedness within the reconstructed cell. We show unambiguous evidence for emergent spin polarizations spreading over the primitive cell, with the magnetization orientation synchronized with alternating handedness of chiral order. Our first-principles studies identify the origin of intertwined orders being correlation driven, with the threading order of chirality emerging when the on-site Coulomb repulsion exceeds a critical value. The spin ordering is further shown to be of hybrid ferrimagnetic nature, contributed by the itinerant electrons and localized d-orbitals. Collectively, these findings expand the realm of chiral order in correlated electron systems, and facilitate an appealing platform for chiral spintronic and related applications. △ Less

Submitted 22 June, 2024; originally announced June 2024.

Spin-polarized correlated insulator in monolayer MoTe2-x

Authors: Zemin Pan, Wenqi Xiong, Jiaqi Dai, Yunhua Wang, Tao Jian, Xingxia Cui, **ghao Deng, Xiaoyu Lin, Zhengbo Cheng, Yusong Bai, Chao Zhu, Da Huo, Geng Li, Min Feng, Jun He, Wei Ji, Shengjun Yuan, Fengcheng Wu, Chendong Zhang, Hong-Jun Gao

Abstract: Flat electronic bands near the Fermi level provide a fertile playground for realizing interaction-driven correlated physics. To date, related experiments have mostly been limited to engineered multilayer systems (e.g., moiré systems). Herein, we report an experimental realization of nearly flat bands across the Fermi level in monolayer MoTe2-x by fabricating a uniformly ordered mirror-twin boundar… ▽ More Flat electronic bands near the Fermi level provide a fertile playground for realizing interaction-driven correlated physics. To date, related experiments have mostly been limited to engineered multilayer systems (e.g., moiré systems). Herein, we report an experimental realization of nearly flat bands across the Fermi level in monolayer MoTe2-x by fabricating a uniformly ordered mirror-twin boundary superlattice (corresponding to a stoichiometry of MoTe56/33). The kagome flat bands are discovered by combining scanning tunnelling microscopy and theoretical calculations. The partial filling nature of flat bands yields a correlated insulating state exhibiting a hard gap as large as 15 meV. Moreover, we observe pronounced responses of the correlated states to magnetic fields, providing evidence for a spin-polarized ground state. Our work introduces a monolayer platform that manifests strong correlation effects arising from flattened electronic bands. △ Less

Submitted 29 April, 2024; v1 submitted 12 July, 2023; originally announced July 2023.

Comments: 20 pages, 4 figures

Realization of multiple charge density waves in NbTe2 at the monolayer limit

Authors: Yusong Bai, Zemin Pan, **ghao Deng, Xiaoyu Lin, Tao Jian, Chao Zhu, Da Huo, Zhengbo Cheng, ** Cui, Zhenyu Zhang, Qiang Zou, Chendong Zhang

Abstract: Abstract: Layered transition-metal dichalcogenides (TMDCs) down to the monolayer (ML) limit provide a fertile platform for exploring charge-density waves (CDWs). Though bulk NbTe2 is known to harbor a single axis 3*1 CDW coexisting with non-trivial quantum properties, the scenario in the ML limit is still experimentally unknown. In this study, we unveil the richness of the CDW phases in ML NbTe2,… ▽ More Abstract: Layered transition-metal dichalcogenides (TMDCs) down to the monolayer (ML) limit provide a fertile platform for exploring charge-density waves (CDWs). Though bulk NbTe2 is known to harbor a single axis 3*1 CDW coexisting with non-trivial quantum properties, the scenario in the ML limit is still experimentally unknown. In this study, we unveil the richness of the CDW phases in ML NbTe2, where not only the theoretically predicted 4*4 and 4*1 phases, but also two unexpected sqrt(28)*sqrt(28) and sqrt(19)*sqrt(19) phases, can be realized. For such a complex CDW system, we establish an exhaustive growth phase diagram via systematic efforts in the material synthesis and scanning tunneling microscope characterization. Moreover, we report that the energetically stable phase is the larger scale order (sqrt(19)*sqrt(19)), which is surprisingly in contradiction to the prior prediction (4*4). These findings are confirmed using two different kinetic pathways, i.e., direct growth at proper growth temperatures (T), and low-T growth followed by high-T annealing. Our results provide a comprehensive diagram of the "zoo" of CDW orders in ML 1T-NbTe2 for the first time and offer a new material platform for studying novel quantum phases in the 2D limit. △ Less

Submitted 11 January, 2023; originally announced January 2023.

Tunable charge carriers and thermoelectricity of single-crystal Ba8Ga16Sn30

Authors: M. A. Avila, D. Huo, T. Sakata, K. Suekuni, T. Takabatake

Abstract: We have grown single crystals of the type-VIII intermetallic clathrate Ba8Ga16Sn30 from both Sn and Ga flux, evaluated their compositions through electron microprobe analysis and studied their transport properties through measurements on temperature dependent resistivity, thermopower and Hall coefficient. Crystals grown in Sn flux show n-type carriers and those from Ga flux show p-type carriers,… ▽ More We have grown single crystals of the type-VIII intermetallic clathrate Ba8Ga16Sn30 from both Sn and Ga flux, evaluated their compositions through electron microprobe analysis and studied their transport properties through measurements on temperature dependent resistivity, thermopower and Hall coefficient. Crystals grown in Sn flux show n-type carriers and those from Ga flux show p-type carriers, whereas all measured compositions remain very close to the stoichiometric 8:16:30 proportion of Ba:Ga:Sn, expected from charge-balance principles. Our results indicate a very high sensitivity of the charge carrier nature and density with respect to the growth conditions, leading to relevant differences in transport properties which point to the importance of tuning this material for optimal thermoelectric performance. △ Less

Submitted 4 January, 2006; v1 submitted 4 May, 2005; originally announced May 2005.

Comments: Revised version accepted in J. Phys.: Cond. Mat

Journal ref: J. Phys. Condens. Matter 18 (2006) 1585-1592.

Structural, transport, and thermal properties of single crystalline type-VIII clathrate Ba8Ga16Sn30

Authors: D. Huo, T. Sakata, T. Sasakawa, M. A. Avila, M. Tsubota, F. Iga, H. Fukuoka, S. Yamanaka, S. Aoyagi, T. Takabatake

Abstract: We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolu… ▽ More We report the electrical resistivity, Hall coefficient, thermoelectric power, specific heat, and thermal conductivity on single crystals of the type-VIII clathrate Ba8Ga16Sn30 grown from Sn-flux. Negative S and R_H over a wide temperature range indicate that electrons dominate electrical transport properties. Both rho(T) and S(T) show typical behavior of a heavily doped semiconductor. The absolute value of S increases monotonically to 243 uV/K with increasing temperature up to 550 K. The large S may originate from the low carrier concentration n=3.7x10^19 cm^(-3). Hall mobility u_H shows a maximum of 62 cm^2/Vs around 70 K. The analysis of temperature dependence of u_H suggests a crossover of dominant scattering mechanism from ionized impurity to acoustic phonon scattering with increasing temperature. The existence of local vibration modes of Ba atoms in cages composed of Ga and Sn atoms is evidenced by analysis of experimental data of structural refinement and specific heat, which give an Einstein temperature of 50 K and a Debye temperature of 200 K. This local vibration of Ba atoms should be responsible for the low thermal conductivity (1.1 W/m K at 150 K). The potential of type-VIII clathrate compounds for thermoelectric application is discussed. △ Less

Submitted 21 September, 2004; originally announced September 2004.

Comments: 6 pages, 6 figures, submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 71 (2005) 075113.