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Low-Voltage Magnetoelectric Coupling in Membrane Heterostructures
Authors:
S. Lindemann,
J. Irwin,
G. -Y. Kim,
B. Wang,
K. Eom,
J. J. Wang,
J. M. Hu,
L. Q. Chen,
S. Y. Choi,
C. B. Eom,
M. S. Rzchowski
Abstract:
Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics, like (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates due to their giant piezoelectricity. But thin films of PMN-PT suffer from substrate…
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Strain-mediated magnetoelectric (ME) coupling in ferroelectric (FE) / ferromagnetic (FM) heterostructures offers a unique opportunity for both fundamental scientific research and low power multifunctional devices. Relaxor-ferroelectrics, like (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMN-xPT), are ideal FE layer candidates due to their giant piezoelectricity. But thin films of PMN-PT suffer from substrate clam** which substantially reduces piezoelectric in-plane strains. Here we present the first demonstration of low voltage ME coupling in an all-thin-film heterostructure which utilizes the anisotropic strains induced by the (011) orientation of PMN-PT. We completely remove PMN-PT films from their substrate and couple with FM Ni overlayers to create membrane PMN-PT/Ni heterostructures showing 90 degree Ni magnetization rotation with 3V PMN-PT bias, much less than the bulk PMNPT ~100V requirement. Scanning transmission electron microscopy and phase-field simulations clarify the membrane response. These results provide a crucial step towards understanding the microstructural behavior of PMN-PT thin films for use in piezo-driven magnetoelectric heterostructures.
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Submitted 11 October, 2021;
originally announced October 2021.
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Magnetoelectric Coupling by Giant Piezoelectric Tensor Design
Authors:
J. Irwin,
S. Lindemann,
W. Maeng,
J. J. Wang,
V. Vaithyanathan,
J. M. Hu,
L. Q. Chen,
D. G. Schlom,
C. B. Eom,
M. S. Rzchowski
Abstract:
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane pie…
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Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clam**, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response.
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Submitted 8 January, 2019;
originally announced January 2019.
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Quantum tunneling of two coupled single-molecular magnets
Authors:
J. M. Hu,
Z. D. Chen,
S. Q. Shen
Abstract:
Two single-molecule magnets are coupled antiferromagnetically to form a supramolecule dimer. We study the coupling effect and tunneling process by means of the numerical exact diagonalization method, and apply them to the recently synthesized supramoleculer dimer [Mn4]2 The model parameters are calculated for the dimer based on the tunneling process. The absence of tunneling at zero field and sw…
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Two single-molecule magnets are coupled antiferromagnetically to form a supramolecule dimer. We study the coupling effect and tunneling process by means of the numerical exact diagonalization method, and apply them to the recently synthesized supramoleculer dimer [Mn4]2 The model parameters are calculated for the dimer based on the tunneling process. The absence of tunneling at zero field and swee** rate effect on the step height in the hysterisis loops are understood very well in this theory.
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Submitted 29 November, 2002;
originally announced December 2002.
