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Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle
Authors:
Zhihao Jiang,
Dongkyu Lee,
Alfred J. H. Jones,
Youngju Park,
Kimberly Hsieh,
Paulina Majchrzak,
Chakradhar Sahoo,
Thomas S. Nielsen,
Kenji Watanabe,
Takashi Taniguchi,
Philip Hofmann,
Jill A. Miwa,
Yong P. Chen,
Jeil Jung,
Søren Ulstrup
Abstract:
Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand quantum many-body states such as Mott insulators, unconventional superconductors and the fractional quantum Hall effect. These phenomena are observed in transport experiments when changing the filling of the low-energy electronic bands. Their origin is broadly ascribed to a combination of flat bands and strong Co…
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Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand quantum many-body states such as Mott insulators, unconventional superconductors and the fractional quantum Hall effect. These phenomena are observed in transport experiments when changing the filling of the low-energy electronic bands. Their origin is broadly ascribed to a combination of flat bands and strong Coulomb interactions, yet a comprehensive understanding is lacking. This is primarily because the relevant low-energy band structure is believed to strongly change in a non-trivial way as the electron filling is varied. Here we gain direct access to the filling-dependent low energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying micro-focused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: The do** dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body related bandwidth change. In TDBG, on the other hand, we find a complex behaviour of the low-energy bands, combining non-monotonous bandwidth changes and tuneable gap openings. Our work establishes the extent of electric field tunability of the low energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena.
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Submitted 27 May, 2024;
originally announced May 2024.
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Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES
Authors:
Zhihao Jiang,
Kimberly Hsieh,
Alfred J. H. Jones,
Paulina Majchrzak,
Chakradhar Sahoo,
Kenji Watanabe,
Takashi Taniguchi,
Jill A. Miwa,
Yong P. Chen,
Søren Ulstrup
Abstract:
Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic do** is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic…
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Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic do** is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic correlations. Numerous technical challenges arising from spatial inhomogeneity of interlayer interactions, twist angle and device functionality have so far limited momentum-resolved electronic structure measurements of these systems to static conditions. Here, we present a detailed characterization of the electronic structure exhibiting miniband dispersions for twisted bilayer graphene, near the magic angle, integrated in a functional device architecture using micro-focused angle-resolved photoemission spectroscopy. The optimum conditions for visualizing the miniband dispersion are determined by exploiting the spatial resolution and photon energy tunability of the light source and applied to extract a hybridization gap size of $(0.14 \pm 0.03)$~eV and flat band segments extending across a moiré mini Brillouin zone. \textit{In situ} electrostatic gating of the sample enables significant electron-do**, causing the conduction band states to shift below the Fermi energy. Our work emphasizes key challenges in probing the electronic structure of magic angle bilayer graphene devices and outlines conditions for exploring the do**-dependent evolution of the dispersion that underpins the ability to control many-body interactions in the material.
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Submitted 4 February, 2024;
originally announced February 2024.
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Charge transfer-induced Lifshitz transition and magnetic symmetry breaking in ultrathin CrSBr crystals
Authors:
Marco Bianchi,
Kimberly Hsieh,
Esben Juel Porat,
Florian Dirnberger,
Julian Klein,
Kseniia Mosina,
Zdenek Sofer,
Alexander N. Rudenko,
Mikhail I. Katsnelson,
Yong P. Chen,
Malte Rösner,
Philip Hofmann
Abstract:
Ultrathin CrSBr flakes are exfoliated \emph{in situ} on Au(111) and Ag(111) and their electronic structure is studied by angle-resolved photoemission spectroscopy. The thin flakes' electronic properties are drastically different from those of the bulk material and also substrate-dependent. For both substrates, a strong charge transfer to the flakes is observed, partly populating the conduction ban…
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Ultrathin CrSBr flakes are exfoliated \emph{in situ} on Au(111) and Ag(111) and their electronic structure is studied by angle-resolved photoemission spectroscopy. The thin flakes' electronic properties are drastically different from those of the bulk material and also substrate-dependent. For both substrates, a strong charge transfer to the flakes is observed, partly populating the conduction band and giving rise to a highly anisotropic Fermi contour with an Ohmic contact to the substrate. The fundamental CrSBr band gap is strongly renormalized compared to the bulk. The charge transfer to the CrSBr flake is substantially larger for Ag(111) than for Au(111), but a rigid energy shift of the chemical potential is insufficient to describe the observed band structure modifications. In particular, the Fermi contour shows a Lifshitz transition, the fundamental band gap undergoes a transition from direct on Au(111) to indirect on Ag(111) and a do**-induced symmetry breaking between the intra-layer Cr magnetic moments further modifies the band structure. Electronic structure calculations can account for non-rigid Lifshitz-type band structure changes in thin CrSBr as a function of do** and strain. In contrast to undoped bulk band structure calculations that require self-consistent $GW$ theory, the doped thin film properties are well-approximated by density functional theory if local Coulomb interactions are taken into account on the mean-field level and the charge transfer is considered.
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Submitted 24 July, 2023;
originally announced July 2023.
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Spontaneous time reversal symmetry breaking at individual grain boundaries in graphene
Authors:
Kimberly Hsieh,
Vidya Kochat,
Tathagata Biswas,
Chandra Sekhar Tiwary,
Abhishek Mishra,
Gopalakrishnan Ramalingam,
Aditya Jayaraman,
Kamanio Chattopadhyay,
Srinivasan Raghavan,
Manish Jain,
Arindam Ghosh
Abstract:
Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum trans…
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Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing, and hence formation of local magnetic moments, below $T\lesssim 4$ K, we observe complete lifting of TRS at high carrier densities ($n \gtrsim 5\times 10^{12}$cm$^{-2}$) and low temperature ($T\lesssim 2$ K). An unprecedented thirty times reduction in the UCF magnitude with increasing do** density further supports the possibility of an emergent frozen magnetic state at the GBs. Our experimental results suggest that realistic GBs of graphene can be a promising resource for new electronic phases and spin-based applications.
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Submitted 30 March, 2021; v1 submitted 9 February, 2021;
originally announced February 2021.
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Evidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene
Authors:
Aditya Jayaraman,
Kimberly Hsieh,
Bhaskar Ghawri,
Phanibhusan S. Mahapatra,
Arindam Ghosh
Abstract:
Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal war** has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challe…
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Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal war** has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challenging because of its relatively low energy scale ($\sim 1$ meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observe additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of Mott formula can be explained quantitatively by considering the effects of trigonal war**, thereby serving as a possible evidence of a Lifshitz transition.
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Submitted 5 March, 2020;
originally announced March 2020.
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Optimising Graphene Visibility in van der Waals Heterostructures
Authors:
Thanmay S. Menon,
Simli Mishra,
Vidhu Catherine Antony,
Kiranmayi Dixit,
Saloni Kakkar,
Tanweer Ahmed,
Saurav Islam,
Aditya Jayaraman,
Kimberly Hsieh,
Paritosh Karnatak,
Arindam Ghosh
Abstract:
Graphene constitutes one of the key elements in many functional van der Waals heterostructures. However, it has negligible optical visibility due to its monolayer nature. Here we study the visibility of graphene in various van der Waals heterostructures and include the effects of the source spectrum, oblique incidence and the spectral sensitivity of the detector to obtain a realistic model. A visi…
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Graphene constitutes one of the key elements in many functional van der Waals heterostructures. However, it has negligible optical visibility due to its monolayer nature. Here we study the visibility of graphene in various van der Waals heterostructures and include the effects of the source spectrum, oblique incidence and the spectral sensitivity of the detector to obtain a realistic model. A visibility experiment is performed at different wavelengths, resulting in a very good agreement with our calculations. This allows us to reliably predict the conditions for better visibility of graphene in van der Waals heterostructures. The framework and the codes provided in this work can be extended to study the visibility of any 2D material within an arbitrary van der Waals heterostructure.
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Submitted 18 June, 2019; v1 submitted 27 March, 2019;
originally announced March 2019.