Showing 1–4 of 4 results for author: Hsiao, F

Levitation by a dipole electric field

Authors: **-Rui Tsai, Hong-Yue Huang, Jih-Kang Hsieh, Yu-Ting Cheng, Ying-Pin Tsai, Cheng-Wei Lai, Yu-Hsuan Kao, Wen-Chi Chen, Fu-Li Hsiao, Po-Heng Lin, Tzay-Ming Hong

Abstract: The phenomenon of floating can be fascinating in any field, with its presence seen in art, films, and scientific research. This phenomenon is a captivating and pertinent subject with practical applications, such as Penning traps for antimatter confinement and Ion traps as essential architectures for quantum computing models. In our project, we reproduced the 1893 water bridge experiment using glyc… ▽ More The phenomenon of floating can be fascinating in any field, with its presence seen in art, films, and scientific research. This phenomenon is a captivating and pertinent subject with practical applications, such as Penning traps for antimatter confinement and Ion traps as essential architectures for quantum computing models. In our project, we reproduced the 1893 water bridge experiment using glycerol and first observed that lump-like macroscopic dipole moments can undergo near-periodic oscillations that exhibit floating effects and do not need classical bridge form. By combining experimental analysis, neural networks, investigation of Kelvin force generated by the Finite element method, and exploration of discharging, we gain insights into the mechanisms of motion. Our discovery has overturned the previous impression of a bridge floating in the water, leading to a deeper understanding of the new trap mechanism under strong electric fields with a single pair of electrodes. △ Less

Submitted 2 January, 2024; v1 submitted 3 July, 2023; originally announced July 2023.

Comments: 5 pages, 5 figures

Modeling Photocurrent Spectra of In$_{0.91}$Ga$_{0.09}$N/In$_{0.4}$Ga$_{0.6}$N Disk-in-Wire Photodiode on Silicon for $1.3$ $μ$m $-$ $1.55$ $μ$m Operation

Authors: Fu-Chen Hsiao, Arnab Hazari, Pallab Bhattacharya, Yia-Chung Chang, John M. Dallesasse

Abstract: This work reports comprehensive theoretical modeling of photocurrent spectra generated by an In$_{0.91}$Ga$_{0.09}$N/In$_{0.4}$Ga$_{0.6}$N disk-in-wire photodiode. The strain distribution is calculated by valence-force-field (VFF) model, while a realistic band structure of the InN/InGaN heterostructure is incorporated using an eight-band effective bond-orbital model (EBOM) with spin-orbit coupling… ▽ More This work reports comprehensive theoretical modeling of photocurrent spectra generated by an In$_{0.91}$Ga$_{0.09}$N/In$_{0.4}$Ga$_{0.6}$N disk-in-wire photodiode. The strain distribution is calculated by valence-force-field (VFF) model, while a realistic band structure of the InN/InGaN heterostructure is incorporated using an eight-band effective bond-orbital model (EBOM) with spin-orbit coupling neglected. The electrostatic potential is obtained from self-consistent calculation employing the non-equilibrium Green's function (NEGF) method. With the strain distribution and band profile determined, a multi-band transfer-matrix method (TMM) is used to calculate the tunneling coefficients of optically-pumped carriers in the absorbing region. The photocurrent spectra contributed by both single-photon absorption (SPA) and two-photon absorption (TPA) are calculated. The absorption coefficient is weighted by the carrier tunneling rate and the photon density-of-state (DOS) in the optical cavity formed in the nanowire region to produce the photocurrent. The calculated photocurrent spectra is in good agreement with experimental data, while physical mechanisms for the observed prominent peaks are identified and investigated. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Electric-field-tunable intervalley excitons and phonon replicas in bilayer WSe$_2$

Authors: Mashael M. Altaiary, Erfu Liu, Ching-Tarng Liang, Fu-Chen Hsiao, Jeremiah van Baren, Takashi Taniguchi, Kenji Watanabe, Nathaniel M. Gabor, Yia-Chung Chang, Chun Hung Lui

Abstract: We report the direct observation of intervalley exciton between the Q conduction valley and $Γ$ valence valley in bilayer WSe$_2$ by photoluminescence. The Q$Γ$ exciton lies at ~18 meV below the QK exciton and dominates the luminescence of bilayer WSe$_2$. By measuring the exciton spectra at gate-tunable electric field, we reveal different interlayer electric dipole moments and Stark shifts betwee… ▽ More We report the direct observation of intervalley exciton between the Q conduction valley and $Γ$ valence valley in bilayer WSe$_2$ by photoluminescence. The Q$Γ$ exciton lies at ~18 meV below the QK exciton and dominates the luminescence of bilayer WSe$_2$. By measuring the exciton spectra at gate-tunable electric field, we reveal different interlayer electric dipole moments and Stark shifts between Q$Γ$ and QK excitons. Notably, we can use the electric field to switch the energy order and dominant luminescence between Q$Γ$ and QK excitons. Both Q$Γ$ and QK excitons exhibit pronounced phonon replicas, in which two-phonon replicas outshine the one-phonon replicas due to the existence of (nearly) resonant exciton-phonon scatterings and numerous two-phonon scattering paths. We can simulate the replica spectra by comprehensive theoretical modeling and calculations. The good agreement between theory and experiment for the Stark shifts and phonon replicas strongly supports our assignment of Q$Γ$ and QK excitons. △ Less

Submitted 26 January, 2021; originally announced January 2021.

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Authors: Fu-Chen Hsiao, Ching-Tarng Liang, Yia-Chung Chang, John M. Dallesasse

Abstract: A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial guess for WZ structure based on the two-center approximation. The electronic band structure of III-nitride WZ semiconductors can hence be produced by utilizing this… ▽ More A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial guess for WZ structure based on the two-center approximation. The electronic band structure of III-nitride WZ semiconductors can hence be produced by utilizing this set of parameters modified to include effects due to three-center integrals and fitting with first-principles calculations. Details of the semi-empirical fitting procedure for constructing the EBOM Hamiltonian for bulk III-nitride WZ semiconductors are presented. The electronic band structure of bulk AlN, GaN, and InN with WZ structure calculated by EBOM with modified interaction parameters are shown and compared to the results obtained from density functional (DFT) theory with meta-generalized gradient approximation (mGGA). The set of parameters are further optimized by using a genetic algorithm. In the end, electronic band structures and electron (hole) effective masses near the zone center calculated by the proposed model with best fitting parameters are analyzed and compared with the $\mathbf{k}\cdot \mathbf{p}$ model. △ Less

Submitted 3 November, 2019; v1 submitted 7 July, 2018; originally announced July 2018.