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Photoconductive Effects in Single Crystals of BaZrS$_3$
Authors:
Boyang Zhao,
Huandong Chen,
Ragib Ahsan,
Fei Hou,
Eric R Hoglund,
Shantanu Singh,
Huan Zhao,
Han Htoon,
Andrey Krayev,
Maruda Shanmugasundaram,
Patrick E Hopkins,
Jan Seidel,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr…
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Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.
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Submitted 4 October, 2023;
originally announced October 2023.
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Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Authors:
Tingyu Qu,
Shangjian **,
Fuchen Hou,
Deyi Fu,
Junye Huang,
Darryl Foo Chuan Wei,
Xiao Chang,
Kenji Watanabe,
Takashi Taniguchi,
Junhao Lin,
Shaffique Adam,
Barbaros Özyilmaz
Abstract:
The co-existence of ferromagnetism and superconductivity becomes possible through unconventional pairing in the superconducting state. Such materials are exceedingly rare in solid-state systems but are promising platforms to explore topological phases, such as Majorana bound states. Theoretical investigations date back to the late 1950s, but only a few systems have so far been experimentally ident…
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The co-existence of ferromagnetism and superconductivity becomes possible through unconventional pairing in the superconducting state. Such materials are exceedingly rare in solid-state systems but are promising platforms to explore topological phases, such as Majorana bound states. Theoretical investigations date back to the late 1950s, but only a few systems have so far been experimentally identified as potential hosts. Here, we show that atomically-thin niobium diselenide (NbSe$_2$) intercalated with dilute cobalt atoms spontaneously displays ferromagnetism below the superconducting transition temperature ($T_c$). We elucidate the origin of this phase by constructing a magnetic tunnel junction that consists of cobalt and cobalt-doped niobium diselenide (Co-NbSe$_2$) as the two ferromagnetic electrodes, with an ultra-thin boron nitride as the tunnelling barrier. At a temperature well below $T_c$, the tunnelling magnetoresistance shows a bistable state, suggesting a ferromagnetic order in Co-NbSe$_2$. We propose a RKKY exchange coupling mechanism based on the spin-triplet superconducting order parameter to mediate such ferromagnetism. We further perform non-local lateral spin valve measurements to confirm the origin of the ferromagnetism. The observation of Hanle precession signals show spin diffusion length up to micrometres below Tc, demonstrating an intrinsic spin-triplet nature in superconducting NbSe$_2$. Our discovery of superconductivity-mediated ferromagnetism opens the door to an alternative design of ferromagnetic superconductors
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Submitted 11 June, 2023;
originally announced June 2023.
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Quantum microscopy with van der Waals heterostructures
Authors:
A. J. Healey,
S. C. Scholten,
T. Yang,
J. A. Scott,
G. J. Abrahams,
I. O. Robertson,
X. F. Hou,
Y. F. Guo,
S. Rahman,
Y. Lu,
M. Kianinia,
I. Aharonovich,
J. -P. Tetienne
Abstract:
Quantum microscopes based on solid-state spin quantum sensors have recently emerged as powerful tools for probing material properties and physical processes in regimes not accessible to classical sensors, especially on the nanoscale. Such microscopes have already found utility in a variety of problems, from imaging magnetism and charge transport in nanoscale devices, to map** remanent magnetic f…
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Quantum microscopes based on solid-state spin quantum sensors have recently emerged as powerful tools for probing material properties and physical processes in regimes not accessible to classical sensors, especially on the nanoscale. Such microscopes have already found utility in a variety of problems, from imaging magnetism and charge transport in nanoscale devices, to map** remanent magnetic fields from ancient rocks and biological organisms. However, applications of quantum microscopes have so far relied on sensors hosted in a rigid, three-dimensional crystal, typically diamond, which limits their ability to closely interact with the sample under study. Here we demonstrate a versatile and robust quantum microscope using quantum sensors embedded within a thin layer of a van der Waals (vdW) material, hexagonal boron nitride (hBN). To showcase the capabilities of this platform, we assemble several active vdW heterostructures, with an hBN layer acting as the quantum sensor. We demonstrate time-resolved, simultaneous temperature and magnetic imaging near the Curie temperature of a vdW ferromagnet as well as apply this unique microscope to map out charge currents and Joule heating in graphene. By enabling intimate proximity between sensor and sample, potentially down to a single atomic layer, the hBN quantum sensor represents a paradigm shift for nanoscale quantum sensing and microscopy. Moreover, given the ubiquitous use of hBN in modern materials and condensed matter physics research, we expect our technique to find rapid and broad adoption in these fields, further motivated by the prospect of performing in-situ chemical analysis and noise spectroscopy using advanced quantum sensing protocols.
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Submitted 6 December, 2021;
originally announced December 2021.
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Spontaneous Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$
Authors:
Fuchen Hou,
Qiushi Yao,
Chun-Sheng Zhou,
Xiao-Ming Ma,
Mengjiao Han,
Yu-Jie Hao,
Xuefeng Wu,
Yu Zhang,
Hongyi Sun,
Chang Liu,
Yue Zhao,
Qihang Liu,
Junhao Lin
Abstract:
MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator which stimulates intense interests due to the exotic quantum phenomena and promising device applications. Surface structure is a determinant factor to understand the novel magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here, we discovered a spontaneous surface collapse and reconstruction…
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MnBi$_2$Te$_4$ is an antiferromagnetic topological insulator which stimulates intense interests due to the exotic quantum phenomena and promising device applications. Surface structure is a determinant factor to understand the novel magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here, we discovered a spontaneous surface collapse and reconstruction in few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as Mn-doped Bi$_2$Te$_3$ quintuple-layer and Mn$_x$Bi$_y$Te double-layer with a clear van der Waals gap in between. Combining with first-principles calculations, such spontaneous surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and tellurium vacancy in the exfoliated surface, which is further supported by in-situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi$_2$Te$_4$, and provide insightful perspective of the surface-related quantum measurements in MnBi$_2$Te$_4$ few-layer devices.
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Submitted 17 April, 2020;
originally announced April 2020.
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Elastic properties and electronic structures of antiperovskite-type InNCo3 and InNNi3
Authors:
Z. F. Hou
Abstract:
We have performed the first-principles calculations to study the elasticity, electronic structure, and magnetism of InNCo3 and InNNi3. The independent elastic constants are derived from the second derivative of total energy as a function of strain, and the elastic modulus are predicted according to the Voigt-Reuss-Hill approximation. Our calculations show that the bulk modulus of InNCo3 is sligh…
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We have performed the first-principles calculations to study the elasticity, electronic structure, and magnetism of InNCo3 and InNNi3. The independent elastic constants are derived from the second derivative of total energy as a function of strain, and the elastic modulus are predicted according to the Voigt-Reuss-Hill approximation. Our calculations show that the bulk modulus of InNCo3 is slightly larger than that of InNNi3. For InNCo3 the ferromagnetic state is energetically preferable to the paramagnetic state, while the ground state of InNNi3 is a stable paramagnetic (non-magnetic) state. This is due to the different strength of 2p-3d hybridization for the N-Co and N-Ni atoms in InNCo3 and InNNi3.
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Submitted 5 February, 2010;
originally announced February 2010.
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Ab Initio Study on Electronic Structure of ZrB12 under High Hydrostatic Pressure
Authors:
Z. F. Hou
Abstract:
Using projector augmented wave approach within the generalized gradient approximation, we have studied the structural property and electronic structure of ZrB12. The calculated lattice constants and bulk modulus are in good agreement with the available experimental values. A detailed study of the electronic structure and the charge-density redistribution reveals the features of strong covalent B…
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Using projector augmented wave approach within the generalized gradient approximation, we have studied the structural property and electronic structure of ZrB12. The calculated lattice constants and bulk modulus are in good agreement with the available experimental values. A detailed study of the electronic structure and the charge-density redistribution reveals the features of strong covalent B-B and weak covalent Zr-B bondings in ZrB12. The states at the Fermi level mainly come from the $σ$-$p_{y}$ and $π$-$p_{z}$ orbitals of boron atoms, which are slightly hybridized with the $t_{2g}$-$d_{xz}$ and $t_{2g}$-$d_{yz}$ orbitals of Zr atoms. As the increased hydrostatic pressure on ZrB12, the total density of states at the Fermi level decreases.
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Submitted 7 July, 2006;
originally announced July 2006.
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First-Principles Study of Elasticity and Electronic Structure of Incompressible Osmium Diboride
Authors:
Z. F. Hou
Abstract:
Recently, osmium diboride (OsB2) has attracted considerable attention as an incompressible and hard material. We investigate the structural property, elastic constants, and electronic structure of orthorhombic OsB2 by the first-principles total energy calculations. The calculations are performed within the density functional framework using the projector augmented plane wave method. The structur…
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Recently, osmium diboride (OsB2) has attracted considerable attention as an incompressible and hard material. We investigate the structural property, elastic constants, and electronic structure of orthorhombic OsB2 by the first-principles total energy calculations. The calculations are performed within the density functional framework using the projector augmented plane wave method. The structural properties and bulk modulus of OsB2 compare well with experimental data. The nine independent elastic constants of orthorhombic OsB2 at zero-pressure have also been calculated by symmetry-general least-squares extraction method. We have analyzed the mechanical stability of orthorhombic OsB2 in term of the calculated elastic constants. A detailed study of the electronic structure and the charge-density redistribution reveal the features of strong covalent B-B and Os-B bondings in orthorhombic OsB2. The orbital hybridization and the characteristics of bonding orbitals in OsB2 are identified. Orthorhombic OsB2 exhibits a metallic character and the states at Fermi level mainly come from the $d$ orbital of Os atoms.
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Submitted 26 February, 2006; v1 submitted 11 January, 2006;
originally announced January 2006.
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Effects of Al Addition on the Native Defects in Hafnia
Authors:
Quan Li,
K. M. Koo,
W. M. Lau,
P. F. Lee,
J. Y. Dai,
Z. F. Hou,
X. G. Gong
Abstract:
Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films as a function of Al concentration discloses the evolution of such bands while the density of states of the former one reduces drastically with the Al additio…
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Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films as a function of Al concentration discloses the evolution of such bands while the density of states of the former one reduces drastically with the Al addition, that of the later one remains rather unaffected. Our first principles studies of the system attribute the two bands to the charged oxygen vacancy, and the oxygen interstitial related defect states of the HfO2, respectively. We further demonstrate that the observed evolution of the defect bands originates from the interaction in-between the added Al and the native defects of pure HfO2, which effectively passivates the VO+ induced mid-gap states but has little effect on other aspects of the electronic structure of the material.
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Submitted 26 June, 2005;
originally announced June 2005.
