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Gate-defined Josephson weak-links in monolayer $\mathrm{WTe_2}$
Authors:
Michael D. Randle,
Masayuki Hosoda,
Russell S. Deacon,
Manabu Ohtomo,
Patrick Zellekens,
Kenji Watanabe,
Takashi Taniguchi,
Shota Okazaki,
Takao Sasagawa,
Kenichi Kawaguchi,
Shintaro Sato,
Koji Ishibashi
Abstract:
Systems combining superconductors with topological insulators offer a platform for the study of Majorana bound states and a possible route to realize fault tolerant topological quantum computation. Among the systems being considered in this field, monolayers of tungsten ditelluride ($\mathrm{WTe_2}$) have a rare combination of properties. Notably, it has been demonstrated to be a Quantum Spin Hall…
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Systems combining superconductors with topological insulators offer a platform for the study of Majorana bound states and a possible route to realize fault tolerant topological quantum computation. Among the systems being considered in this field, monolayers of tungsten ditelluride ($\mathrm{WTe_2}$) have a rare combination of properties. Notably, it has been demonstrated to be a Quantum Spin Hall Insulator (QSHI) and can easily be gated into a superconducting state. We report measurements on gate-defined Josephson weak-link devices fabricated using monolayer $\mathrm{WTe_2}$. It is found that consideration of the two dimensional superconducting leads are critical in the interpretation of magnetic interference in the resulting junctions. The reported fabrication procedures suggest a facile way to produce further devices from this technically challenging material and the results mark the first step toward realizing versatile all-in-one topological Josephson weak-links using monolayer $\mathrm{WTe_2}$.
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Submitted 26 July, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
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Josephson junctions of Weyl semimetal $\text{WTe}_2$ induced by spontaneous nucleation of $\text{PdTe}$ superconductor
Authors:
Manabu Ohtomo,
Russell S. Deacon,
Masayuki Hosoda,
Naoki Fushimi,
Hirokazu Hosoi,
Michael D. Randle,
Mari Ohfuchi,
Kenichi Kawaguchi,
Koji Ishibashi,
Shintaro Sato
Abstract:
We report on the fabrication of Josephson junction devices with weak links utilizing the Weyl and higher-order topological semimetal $\text{WTe}_2$. We show that $\text{WTe}_2\text{/Pd}$ contact annealed at a low temperature of 80°C did not exhibit superconducting properties because neither $\text{WTe}_2$ nor Pd are superconductors in the ground state. Upon 180°C annealing, spontaneous formation o…
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We report on the fabrication of Josephson junction devices with weak links utilizing the Weyl and higher-order topological semimetal $\text{WTe}_2$. We show that $\text{WTe}_2\text{/Pd}$ contact annealed at a low temperature of 80°C did not exhibit superconducting properties because neither $\text{WTe}_2$ nor Pd are superconductors in the ground state. Upon 180°C annealing, spontaneous formation of superconducting $\text{PdTe}$ due to Pd diffusion enabled us to obtain the interface between $\text{WTe}_2$ and superconductor suitable for the Josephson junction. This result is a facile technique to make a Josephson junction and induce Cooper pairs into topological telluride semimetals.
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Submitted 22 April, 2022;
originally announced April 2022.
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Separation of Charge Instability and Lattice Symmetry Breaking in an Organic Ferroelectric
Authors:
Ryosuke Takehara,
Keishi Sunam,
Fumitatsu Iwase,
Masayuki Hosoda,
Kazuya Miyagawa,
Tatsuya Miyamoto,
Hiroshi Okamoto,
Kazushi Kanoda
Abstract:
We investigate the charge and lattice states in a quasi-one-dimensional organic ferroelectric material, TTF-QCl$_{4}$, under pressures of up to 35 kbar by nuclear quadrupole resonance experiments. The results reveal a global pressure-temperature phase diagram, which spans the electronic and ionic regimes of ferroelectric transitions, which have so far been studied separately, in a single material.…
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We investigate the charge and lattice states in a quasi-one-dimensional organic ferroelectric material, TTF-QCl$_{4}$, under pressures of up to 35 kbar by nuclear quadrupole resonance experiments. The results reveal a global pressure-temperature phase diagram, which spans the electronic and ionic regimes of ferroelectric transitions, which have so far been studied separately, in a single material. The revealed phase diagram clearly shows that the charge-transfer instability and the lattice symmetry breaking, which coincide in the electronic ferroelectric regime at low pressures, bifurcate at a certain pressure, leading to the conventional ferroelectric regime. The present results reveal that the crossover from electronic to ionic ferroelectricity occurs through the separation of charge and lattice instabilities.
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Submitted 2 February, 2018;
originally announced February 2018.
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The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions
Authors:
M. Minohara,
Y. Hikita,
C. Bell,
H. Inoue,
M. Hosoda,
H. K. Sato,
H. Kumigashira,
M. Oshima,
E. Ikenaga,
H. Y. Hwang
Abstract:
We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These re…
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We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.
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Submitted 21 March, 2014;
originally announced March 2014.
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Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces
Authors:
Beena Kalisky,
Eric M. Spanton,
Hilary Noad,
John R. Kirtley,
Katja C. Nowack,
Christopher Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yanwu Xie,
Yasuyuki Hikita,
Carsten Woltmann,
Georg Pfanzelt,
Rainer Jany,
Christoph Richter,
Harold Y. Hwang,
Jochen Mannhart,
Kathryn A. Moler
Abstract:
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the int…
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The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and TiO$_{2}$-terminated SrTiO$_{3}$ (STO). Transport and other measurements in this system show a plethora of diverse physical phenomena. To better understand the interface conductivity, we used scanning superconducting quantum interference device microscopy to image the magnetic field locally generated by current in an interface. At low temperature, we found that the current flowed in conductive narrow paths oriented along the crystallographic axes, embedded in a less conductive background. The configuration of these paths changed on thermal cycling above the STO cubic-to-tetragonal structural transition temperature, implying that the local conductivity is strongly modified by the STO tetragonal domain structure. The interplay between substrate domains and the interface provides an additional mechanism for understanding and controlling the behaviour of heterostructures.
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Submitted 11 December, 2013;
originally announced December 2013.
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Transistor operation and mobility enhancement in top-gated LaAlO_3 / SrTiO_3 heterostructures
Authors:
M. Hosoda,
Y. Hikita,
H. Y. Hwang,
C. Bell
Abstract:
We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density…
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We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated junction field-effect transistors using a range of LaAlO_3 thicknesses as the top gate insulator. Gated Hall bars show near ideal transistor characteristics at room temperature with on-off ratios greater than 1000. Lower temperature measurements demonstrate a systematic increase in the Hall mobility as the sheet carrier density in the channel is depleted via the top gate, providing a route to higher mobility, lower density electron gases in this system.
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Submitted 18 June, 2013;
originally announced June 2013.
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Measurements of the gate tuned superfluid density in superconducting LaAlO3/SrTiO3
Authors:
Julie A. Bert,
Katja C. Nowack,
Beena Kalisky,
Hilary Noad,
John R. Kirtley,
Chris Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yasayuki Hikita,
Harold Y. Hwang,
Kathryn A. Moler
Abstract:
The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting orde…
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The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting order parameter is unanswered. We present local magnetic susceptibility, related to the superfluid density, as a function of temperature, gate voltage and location. We show that the temperature dependence of the superfluid density at different gate voltages collapse to a single curve characteristic of a full superconducting gap. Further, we show that the dipole moments observed in this system are not modulated by the gate voltage.
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Submitted 17 May, 2012;
originally announced May 2012.
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Critical thickness for ferromagnetism in LaAlO3/SrTiO3 heterostructures
Authors:
Beena Kalisky,
Julie A. Bert,
Brannon B. Klopfer,
Christopher Bell,
Hiroki K. Sato,
Masayuki Hosoda,
Yasuyuki Hikita,
Harold Y. Hwang,
Kathryn A. Moler
Abstract:
In heterostructures of LaAlO3 (LAO) and SrTiO3 (STO), two nonmagnetic insulators, various forms of magnetism have been observed [1-7], which may [8, 9] or may not [10] arise from interface charge carriers that migrate from the LAO to the interface in an electronic reconstruction [11]. We image the magnetic landscape [5] in a series of n-type samples of varying LAO thickness. We find ferromagnetic…
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In heterostructures of LaAlO3 (LAO) and SrTiO3 (STO), two nonmagnetic insulators, various forms of magnetism have been observed [1-7], which may [8, 9] or may not [10] arise from interface charge carriers that migrate from the LAO to the interface in an electronic reconstruction [11]. We image the magnetic landscape [5] in a series of n-type samples of varying LAO thickness. We find ferromagnetic patches that appear only above a critical thickness, similar to that for conductivity [12]. Consequently we conclude that an interface reconstruction is necessary for the formation of magnetism. We observe no change in ferromagnetism with gate voltage, and detect ferromagnetism in a non-conducting p-type sample, indicating that the carriers at the interface do not need to be itinerant to generate magnetism. The fact that the ferromagnetism appears in isolated patches whose density varies greatly between samples strongly suggests that disorder or local strain induce magnetism in a population of the interface carriers.
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Submitted 5 January, 2012;
originally announced January 2012.
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Nonlinear Optical Response of SrTiO3/LaAlO3 Superlattices
Authors:
N. Ogawa,
K. Miyano,
M. Hosoda,
T. Higuchi,
C. Bell,
Y. Hikita,
H. Y. Hwang
Abstract:
The electronic symmetry of the SrTiO3/LaAlO3 interface was investigated by optical second harmonic generation, using superlattices with varying periodicity to study the evolution of the electronic reconstruction while avoiding substrate contributions. The superlattices show large perpendicular optical nonlinearity, which abruptly increases when the sublattice thickness goes above 3 unit cells, r…
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The electronic symmetry of the SrTiO3/LaAlO3 interface was investigated by optical second harmonic generation, using superlattices with varying periodicity to study the evolution of the electronic reconstruction while avoiding substrate contributions. The superlattices show large perpendicular optical nonlinearity, which abruptly increases when the sublattice thickness goes above 3 unit cells, revealing substantial effects of the polar-nonpolar interface. The nonlinear 'active' area is primarily in SrTiO3, develops with increasing thickness, and extends up to 8 unit cells from the interface.
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Submitted 31 January, 2009;
originally announced February 2009.
