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Many-body Localization Transition of Ising Spin-1 Chains
Authors:
Taotao Hu,
Yining Zhang,
Hang Ren,
Yiwen Gao,
Xiaodan Li,
Jiameng Hong,
Yuting Li
Abstract:
In this paper, we theoretically investigate the many-body localization properties of one-dimensional Ising spin-1 chains by using the methods of exact matrix diagonalization. We compare it with the MBL properties of the Ising spin-1/2 chains. The results indicate that the one-dimensional Ising spin-1 chains can also undergo MBL phase transition. There are various forms of disorder, and we compare…
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In this paper, we theoretically investigate the many-body localization properties of one-dimensional Ising spin-1 chains by using the methods of exact matrix diagonalization. We compare it with the MBL properties of the Ising spin-1/2 chains. The results indicate that the one-dimensional Ising spin-1 chains can also undergo MBL phase transition. There are various forms of disorder, and we compare the effects of different forms of quasi-disorder and random disorder on many-body localization in this paper. First, we calculate the exctied-state fidelity to study the MBL phase transtion. By changing the form of the quasi-disorder, we study the MBL transition of the system with different forms of quasi-disorder and compare them with those of the random disordered system. The results show that both random disorder and quasi-disorder can cause the MBL phase transition in the one-dimensional Ising spin-1 chains. In order to study the effect of spin interactions, we compare Ising spin-1 chains and spin-1/2 chains with the next-nearest-neighbour(N-N) two-body interactions and the next-next-nearest-neighbour (N-N-N)interactions. The results show that the critical point increases with the addition of the interaction. Then we study the dynamical properties of the model by the dynamical behavior of diagonal entropy (DE), local magnetization and the time evolution of fidelity to further prove the occurrence of MBL phase transition in the disordered Ising spin-1 chains with the (N-N) coupling term and distinguish the ergodic phase (thermal phase) and the many-body localized phase. Lastly, we delve into the impact of periodic driving on one-dimensional Ising spin-1 chains. And we compare it with the results obtained from the Ising spin-1/2 chains. It shows that periodic driving can cause Ising spin-1 chains and Ising spin-1/2 chains to occur the MBL transition.
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Submitted 3 May, 2024;
originally announced May 2024.
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Parafermions with symmetry-protected non-Abelian statistics
Authors:
Jian-Song Hong,
Su-Qi Zhang,
Xin Liu,
Xiong-Jun Liu
Abstract:
Non-Abelian anyons have garnered extensive attention for obeying exotic non-Abelian statistics and having potential applications to fault-tolerant quantum computing. While the prior research has predominantly focused on non-Abelian statistics without the necessity of symmetry protection, recent progresses have shown that symmetries can play essential roles and bring a notion of the symmetry-protec…
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Non-Abelian anyons have garnered extensive attention for obeying exotic non-Abelian statistics and having potential applications to fault-tolerant quantum computing. While the prior research has predominantly focused on non-Abelian statistics without the necessity of symmetry protection, recent progresses have shown that symmetries can play essential roles and bring a notion of the symmetry-protected non-Abelian (SPNA) statistics. In this work, we extend the concept of SPNA statistics to strongly-correlated systems which host parafermion zero modes (PZMs). This study involves a few fundamental results proved here. First, we unveil a generic unitary symmetry mechanism that protects PZMs from local couplings. Then, with this symmetry protection, the PZMs can be categorized into two nontrivial sectors, each maintaining its own parity conservation, even though the whole system cannot be dismantled into separate subsystems due to nonlinear interactions. Finally, by leveraging the parity conservation of each sector and the general properties of the effective braiding Hamiltonian, we prove rigorously that the PZMs intrinsically obey SPNA statistics. To further confirm the results, we derive the braiding matrix at a tri-junction. We also propose a correlated quantum nanowire model that accommodates a pair of PZMs protected by mirror symmetry and satisfying the generic theory. This work shows a broad spectrum of strongly-correlated systems capable of hosting fractional SPNA quasiparticles and enriches our comprehension of fundamental quantum statistics linked to the symmetries that govern the exchange dynamics.
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Submitted 21 March, 2024; v1 submitted 14 March, 2024;
originally announced March 2024.
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Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure
Authors:
Dongwon Shin,
Hyeonbeom Kim,
Sung Ju Hong,
Sehwan Song,
Yeongju Choi,
Youngkuk Kim,
Sungkyun Park,
Dongseok Suh,
Woo Seok Choi
Abstract:
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid het…
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Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin exchange splitting. The large and adjustable spin exchange splitting of 155.9 - 306.5 meV was obtained by the characteristic shifts in both the spin symmetry broken quantum Hall states and the Shubnikov-de-Haas oscillations. Strong hybridization induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.
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Submitted 13 March, 2024;
originally announced March 2024.
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Local Manipulation of Skyrmion Lattice in Fe3GaTe2 at Room Temperature
Authors:
Shuaizhao **,
Zhan Wang,
Shouzhe Dong,
Yiting Wang,
Kun Han,
Guangcheng Wang,
Zunyi Deng,
Xingan Jiang,
Ying Zhang,
Houbing Huang,
Jiawang Hong,
Xiaolei Wang,
Tianlong Xia,
Sang-Wook Cheong,
Xueyun Wang
Abstract:
Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intri…
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Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intrinsic skyrmion state in van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flake. The ordering of skyrmion state is further analyzed. Our result suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.
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Submitted 22 February, 2024;
originally announced February 2024.
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Many-body localization properties of fully frustrated Heisenberg spin-1/2 ladder model with next-nearest-neighbor interaction
Authors:
Jiameng Hong,
Taotao Hu
Abstract:
Many-body localization (MBL) is an intriguing physical phenomenon that arises from the interplay of interaction and disorder, allowing quantum systems to prevent thermalization. In this study, we investigate the MBL properties of the fully frustrated Heisenberg spin-1/2 ladder model with next-nearest-neighbor hop** interaction along the leg direction and compare it with the Heisenberg spin-1/2 s…
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Many-body localization (MBL) is an intriguing physical phenomenon that arises from the interplay of interaction and disorder, allowing quantum systems to prevent thermalization. In this study, we investigate the MBL properties of the fully frustrated Heisenberg spin-1/2 ladder model with next-nearest-neighbor hop** interaction along the leg direction and compare it with the Heisenberg spin-1/2 single-chain model with next-nearest-neighbor hop** interaction. We explore the MBL transition using random matrix theory and study the characteristics of entanglement entropy and its variance. Our results show that for the single-chain model, the critical point $w _{1} \sim$ 7.5 $\pm$ 0.5, whereas for the frustrated ladder model, $w _{2} \sim$ 10.5 $\pm$ 0.5. Moreover, we observe the existence of a many-body mobility edge in the frustrated ladder model. We also investigate the dynamical properties of the frustrated ladder model and identify the logarithmic growth of entanglement entropy, high fidelity of initial information, and magnetic localization phenomenon in the localized phase. Finally, we explore the finite-size scaling of the two models. Our findings suggest that interpreting MBL transition as a continuous second-order phase transition yields a better scaling solution than the Kosterlitz-Thouless type transition for our two models, and this difference is more pronounced in the frustrated ladder model compared with the single-chain model.
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Submitted 17 February, 2024;
originally announced February 2024.
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Flexomagnetoelectric effect in Sr2IrO4 thin films
Authors:
Xin Liu,
Ting Hu,
Yujun Zhang,
Xueli Xu,
Biao Wu,
Zongwei Ma,
Peng Lv,
Yuelin Zhang,
Shih-Wen Huang,
Jialu Wu,
**g Ma,
Jiawang Hong,
Zhigao Sheng,
Chenglong Jia,
Erjun Kan,
Ce-Wen Nan,
**xing Zhang
Abstract:
Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybr…
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Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybridization along z axis. Thus, emergent polar phase and out-of-plane magnetic moment have been simultaneously observed in these asymmetric Sr2IrO4 thin films, which both are absent in its ground state. Furthermore, upon the application of magnetic field, such polarization can be controlled by modifying the occupied d orbitals through spin-orbit interaction, giving rise to a flexomagnetoelectric effect. This work provides a general strategy to artificially design multiple symmetries and ferroic orderings in strongly correlated systems.
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Submitted 9 January, 2024;
originally announced January 2024.
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High Absorptivity Nanotextured Powders for Additive Manufacturing
Authors:
Ottman A. Tertuliano,
Philip J. DePond,
Andrew C. Lee,
Jiho Hong,
David Doan,
Luc Capaldi,
Mark Brongersma,
X. Wendy Gu,
Manyalibo J. Matthews,
Wei Cai,
Adrian J. Lew
Abstract:
The widespread application of metal additive manufacturing (AM) is limited by the ability to control the complex interactions between the energy source and the feedstock material. Here we develop a generalizable process to introduce nanoscale grooves to the surface of metal powders which increases the powder absorptivity by up to 70% during laser powder bed fusion. Absorptivity enhancements in cop…
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The widespread application of metal additive manufacturing (AM) is limited by the ability to control the complex interactions between the energy source and the feedstock material. Here we develop a generalizable process to introduce nanoscale grooves to the surface of metal powders which increases the powder absorptivity by up to 70% during laser powder bed fusion. Absorptivity enhancements in copper, copper-silver, and tungsten enables energy efficient manufacturing, with printing of pure copper at relative densities up to 92% using laser energy densities as low as 82 J/mm^3. Simulations show the enhanced powder absorptivity results from plasmon-enabled light concentration in nanoscale grooves combined with multiple scattering events. The approach taken here demonstrates a general method to enhance the absorptivity and printability of reflective and refractory metal powders by changing the surface morphology of the feedstock without altering its composition.
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Submitted 8 December, 2023;
originally announced December 2023.
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Spin and Valley Polarized Multiple Fermi Surfaces of α-RuCl$_3$/Bilayer Graphene Heterostructure
Authors:
Soyun Kim,
Jeonghoon Hong,
Kenji Watanabe,
Takashi Taniguchi,
Joseph Falson,
Jeongwoo Kim,
Youngwook Kim
Abstract:
We report the transport properties of $α$-RuCl$_3$/bilayer graphene heterostructures, where carrier do** is induced by a work function difference, resulting in distinct electron and hole populations in $α$-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant ban…
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We report the transport properties of $α$-RuCl$_3$/bilayer graphene heterostructures, where carrier do** is induced by a work function difference, resulting in distinct electron and hole populations in $α$-RuCl3 and bilayer graphene, respectively. Through a comprehensive analysis of multi-channel transport signatures, including Hall measurements and quantum oscillation, we unveil significant band modifications within the system. In particular, we observe the emergence of spin and valley polarized multiple hole-type Fermi pockets, originating from the spin-selective band hybridization between $α$-RuCl$_3$ and bilayer graphene, breaking the spin degree of freedom. Unlike $α$-RuCl$_3$ /monolayer graphene system, the presence of different hybridization strengths between $α$-RuCl$_3$ and the top and bottom graphene layers leads to an asymmetric behavior of the two layers, confirmed by effective mass experiments, resulting in the manifestation of valley-polarized Fermi pockets. These compelling findings establish $α$-RuCl$_3$ proximitized to bilayer graphene as an outstanding platform for engineering its unique low-energy band structure.
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Submitted 11 October, 2023;
originally announced October 2023.
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Deterministic topological quantum gates for Majorana qubits without ancillary modes
Authors:
Su-Qi Zhang,
Jian-Song Hong,
Yuan Xue,
Xun-Jiang Luo,
Li-Wei Yu,
Xiong-Jun Liu,
Xin Liu
Abstract:
The realization of quantum gates in topological quantum computation still confronts significant challenges in both fundamental and practical aspects. Here, we propose a deterministic and fully topologically protected measurement-based scheme to realize the issue of implementing Clifford quantum gates on the Majorana qubits. Our scheme is based on rigorous proof that the single-qubit gate can be pe…
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The realization of quantum gates in topological quantum computation still confronts significant challenges in both fundamental and practical aspects. Here, we propose a deterministic and fully topologically protected measurement-based scheme to realize the issue of implementing Clifford quantum gates on the Majorana qubits. Our scheme is based on rigorous proof that the single-qubit gate can be performed by leveraging the neighboring Majorana qubit but not disturbing its carried quantum information, eliminating the need for ancillary Majorana zero modes (MZMs) in topological quantum computing. Benefiting from the ancilla-free construction, we show the minimum measurement sequences with four steps to achieve two-qubit Clifford gates by constructing their geometric visualization. To avoid the uncertainty of the measurement-only strategy, we propose manipulating the MZMs in their parameter space to correct the undesired measurement outcomes while maintaining complete topological protection, as demonstrated in a concrete Majorana platform. Our scheme identifies the minimal operations of measurement-based topological and deterministic Clifford gates and offers an ancilla-free design of topological quantum computation.
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Submitted 29 May, 2023;
originally announced May 2023.
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Instabilities of a Bose-Einstein condensate with mixed nonlinear and linear lattices
Authors:
Jun Hong,
Chenhui Wang,
Yong** Zhang
Abstract:
Bose-Einstein condensates (BECs) in periodic potentials generate interesting physics on the instabilities of Bloch states. The lowest-energy Bloch states of BECs in pure nonlinear lattices are dynamically and Landau unstable, which breaks down BEC superfluidity. In this paper we propose to use an out-of-phase linear lattice to stabilize them. The stabilization mechanism is revealed by the averaged…
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Bose-Einstein condensates (BECs) in periodic potentials generate interesting physics on the instabilities of Bloch states. The lowest-energy Bloch states of BECs in pure nonlinear lattices are dynamically and Landau unstable, which breaks down BEC superfluidity. In this paper we propose to use an out-of-phase linear lattice to stabilize them. The stabilization mechanism is revealed by the averaged interaction. We further incorporate a constant interaction into BECs with mixed nonlinear and linear lattices, and reveal its effect on the instabilities of Bloch states in the lowest band.
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Submitted 14 April, 2023;
originally announced April 2023.
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Quantum textures of the many-body wavefunctions in magic-angle graphene
Authors:
Kevin P. Nuckolls,
Ryan L. Lee,
Myungchul Oh,
Dillon Wong,
Tomohiro Soejima,
Jung Pyo Hong,
Dumitru Călugăru,
Jonah Herzog-Arbeitman,
B. Andrei Bernevig,
Kenji Watanabe,
Takashi Taniguchi,
Nicolas Regnault,
Michael P. Zaletel,
Ali Yazdani
Abstract:
Interactions among electrons create novel many-body quantum phases of matter with wavefunctions that often reflect electronic correlation effects, broken symmetries, and novel collective excitations. A wide range of quantum phases has been discovered in MATBG, including correlated insulating, unconventional superconducting, and magnetic topological phases. The lack of microscopic information, incl…
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Interactions among electrons create novel many-body quantum phases of matter with wavefunctions that often reflect electronic correlation effects, broken symmetries, and novel collective excitations. A wide range of quantum phases has been discovered in MATBG, including correlated insulating, unconventional superconducting, and magnetic topological phases. The lack of microscopic information, including precise knowledge of possible broken symmetries, has thus far hampered our understanding of MATBG's correlated phases. Here we use high-resolution scanning tunneling microscopy to directly probe the wavefunctions of the correlated phases in MATBG. The squares of the wavefunctions of gapped phases, including those of the correlated insulators, pseudogap, and superconducting phases, show distinct patterns of broken symmetry with a $\sqrt{3}$ x $\sqrt{3}$ super-periodicity on the graphene atomic lattice that has a complex spatial dependence on the moiré superlattice scale. We introduce a symmetry-based analysis to describe our measurements of the wavefunctions of MATBG's correlated phases with a set of complex-valued local order parameters. For the correlated insulators in MATBG, at fillings of $ν$ = $\pm$ 2 electrons per moiré unit cell relative to charge neutrality, we compare the observed quantum textures to those expected for proposed theoretical ground states. In typical MATBG devices, the textures of correlated insulators' wavefunctions closely match those of the theoretically proposed IKS order, while in ultra-low-strain samples our data has local symmetries like those of a T-IVC phase. We also study the wavefunction of MATBG's superconducting state, revealing strong signatures of intervalley coherence that can only be distinguished from those of the insulator with our phase-sensitive measurements.
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Submitted 28 February, 2023;
originally announced March 2023.
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Symmetric non-Hermitian skin effect with emergent nonlocal correspondence
Authors:
Zhi-Yuan Wang,
Jian-Song Hong,
Xiong-Jun Liu
Abstract:
The non-Hermitian skin effect (NHSE) refers to that an extensive number of eigenstates of a non-Hermitian system are localized in open boundaries. Here we predict a universal phenomenon that with local particle-hole(-like) symmetry (PHS) the skin modes must be equally distributed on different boundaries, manifesting a novel nonlocalization of the local PHS, which is unique to non-Hermitian systems…
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The non-Hermitian skin effect (NHSE) refers to that an extensive number of eigenstates of a non-Hermitian system are localized in open boundaries. Here we predict a universal phenomenon that with local particle-hole(-like) symmetry (PHS) the skin modes must be equally distributed on different boundaries, manifesting a novel nonlocalization of the local PHS, which is unique to non-Hermitian systems. We develop a generic theory for the emergent nonlocal symmetry-protected NHSE by connecting the non-Hermitian system to an extended Hermitian Hamiltonian in a quadruplicate Hilbert space, which maps the skin modes to the topological zero modes and the PHS to an emergent nonlocal symmetry in the perspective of many body physics. The predicted NHSE is robust against perturbations. We propose optical Raman lattice models to observe the predicted phenomena in all physical dimensions, which are accessible with cold-atom experiments.
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Submitted 24 August, 2023; v1 submitted 25 February, 2023;
originally announced February 2023.
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Magnetoelasticity-driven phase inversion of ultrafast spin precession in NixFe100-x thin films
Authors:
Yooleemi Shin,
Seongsoo Yoon,
Jung-Il Hong,
Ji-Wan Kim
Abstract:
We present strong evidences for the deterministic role of magnetoelasticity in ultrafast spin dynamics of ferromagnetic NixFe100-x alloy films. Without a change in the crystal structure, we observed sudden Pi-phase inversion of the spin precession in the range of x = 87.0 - 97.5. In addition, it was found that the phase was continuously changed and reversed its sign by varying the pump fluence. Th…
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We present strong evidences for the deterministic role of magnetoelasticity in ultrafast spin dynamics of ferromagnetic NixFe100-x alloy films. Without a change in the crystal structure, we observed sudden Pi-phase inversion of the spin precession in the range of x = 87.0 - 97.5. In addition, it was found that the phase was continuously changed and reversed its sign by varying the pump fluence. These cannot be explained simply by temperature dependence of magnetocrystalline, demagnetizing, and Zeeman fields which have been conventionally considered so far in describing the spin dynamics. Through the temperature- and composition-dependent simulations adding the magnetoelastic field generated from the lattice thermal strain, we revealed that the conventional and magnetoelastic fields were competing around x = 95.3, where the spin dynamics showed the largest phase shift. For analytic understanding, we further show that the temperature-dependent interplay of the Curie temperature, saturation magnetization, and magnetostriction, which are demonstrated to be the most important macroscopic parameters, determines the ultrafast spin dynamics. Our extensive study emphasizes that magnetoelasticity is the key ingredient for fully understanding the driving mechanism of ultrafast spin dynamics.
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Submitted 22 December, 2022;
originally announced December 2022.
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Nanoscale three-dimensional magnetic sensing with a probabilistic nanomagnet driven by spin-orbit torque
Authors:
Shuai Zhang,
Shihao Li,
Zhe Guo,
Yan Xu,
Ruofan Li,
Zhenjiang Chen,
Song Min,
Xiaofei Yang,
Liang Li,
Jeongmin Hong,
Xuecheng Zou,
Long You
Abstract:
Detection of vector magnetic fields at nanoscale dimensions is critical in applications ranging from basic material science, to medical diagnostic. Meanwhile, an all-electric operation is of great significance for achieving a simple and compact sensing system. Here, we propose and experimentally demonstrate a simple approach to sensing a vector magnetic field at nanoscale dimensions, by monitoring…
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Detection of vector magnetic fields at nanoscale dimensions is critical in applications ranging from basic material science, to medical diagnostic. Meanwhile, an all-electric operation is of great significance for achieving a simple and compact sensing system. Here, we propose and experimentally demonstrate a simple approach to sensing a vector magnetic field at nanoscale dimensions, by monitoring a probabilistic nanomagnet's transition probability from a metastable state, excited by a driving current due to SOT, to a settled state. We achieve sensitivities for Hx, Hy, and Hz of 1.02%/Oe, 1.09%/Oe and 3.43%/Oe, respectively, with a 200 x 200 nm^2 nanomagnet. The minimum detectable field is dependent on the driving pulse events N, and is expected to be as low as 1 uT if N = 3 x 10^6.
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Submitted 17 August, 2022;
originally announced August 2022.
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Energy Gaps and Plateau Characteristics in the Fractional Quantum Hall Effect Derive from Multi-particle Correlations
Authors:
Jongbae Hong
Abstract:
The energy gaps appearing in the fractional quantum Hall effect (FQHE) remain an essential aspect of the investigation. Moreover, the plateau widths in the Hall resistance have been considered simply an effect of disorder as in the integral quantum Hall effect. The existing theories could neither explain the Hall resistance curve owing to plateau widths nor calculate the energy gaps. This study re…
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The energy gaps appearing in the fractional quantum Hall effect (FQHE) remain an essential aspect of the investigation. Moreover, the plateau widths in the Hall resistance have been considered simply an effect of disorder as in the integral quantum Hall effect. The existing theories could neither explain the Hall resistance curve owing to plateau widths nor calculate the energy gaps. This study reveals that both the energy gaps and plateau widths contain fundamental many-body aspects of the FQHE. They are found to be connected via the strengths of multi-particle correlations, which do not affect the plateau heights. They are automatically quantized just by the presence of multi-particle correlations. This work focuses on correlated skip** electrons moving through the edge of an incompressible strip formed within a Hall bar. Consequently, a single-particle Hamiltonian was constructed incorporating the Zeeman energies of multiply-correlated skip** electrons. The resulting energy spectrum exhibits hierarchical splits of the Landau levels according to correlation order. The lowest Landau level is examined. Based on such level splitting, a previously measured Hall resistance curve and energy gaps are quantitatively explained by determining the parameters that describe the degrees of multi-particle correlations. The chemical potential and effective $g$-factors are additionally predicted for the Hall resistance. Furthermore, the fractional electron charge $e/(2n+1)$ for an electron participating in $n$-particle correlation was obtained by identifying the Fermi distribution function of $n$ correlated basic transport entities moving through the edge of the incompressible strip. Finally, the ideal-like Hall resistance was obtained at half-filling using the strengths of multi-particle correlations given in a regular pattern.
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Submitted 25 July, 2022;
originally announced July 2022.
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Giant enhancement of third-harmonic generation in graphene-metal heterostructures
Authors:
Irati Alonso Calafell,
Lee A. Rozema,
David Alcaraz Iranzo,
Alessandro Trenti,
Joel D. Cox,
Avinash Kumar,
Hlib Bieliaiev,
Sebastian Nanot,
Cheng Peng,
Dmitri K. Efetov,
** Yong Hong,
**g Kong,
Dirk R. Englund,
F. Javier García de Abajo,
Frank H. L. Koppens,
Philp Walther
Abstract:
Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonli…
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Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonlinearities in graphene-insulator-metal heterostructures, demonstrating an enhancement by three orders of magnitude in the third-harmonic signal compared to bare graphene. Furthermore, by increasing the graphene Fermi energy through an external gate voltage, we find that graphene plasmons mediate the optical nonlinearity and modify the third-harmonic signal. Our findings show that graphene-insulator-metal is a promising heterostructure for optically-controlled and electrically-tunable nano-optoelectronic components.
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Submitted 25 May, 2022;
originally announced May 2022.
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Dynamical mean-field theory study of a ferromagnetic CrI3 monolayer
Authors:
Chang-Jong Kang,
Jeonghoon Hong,
Jeongwoo Kim
Abstract:
We have employed one of the well-known many-body techniques, density functional theory plus dynamical mean-field theory (DFT + DMFT), to investigate the electronic structure of ferromagnetic monolayer CrI3 as a function of temperature and hole-do** concentration. The computed magnetic susceptibility follows the Curie's law, indicating that the ferromagnetism of monolayer CrI3 originates from loc…
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We have employed one of the well-known many-body techniques, density functional theory plus dynamical mean-field theory (DFT + DMFT), to investigate the electronic structure of ferromagnetic monolayer CrI3 as a function of temperature and hole-do** concentration. The computed magnetic susceptibility follows the Curie's law, indicating that the ferromagnetism of monolayer CrI3 originates from localized magnetic moments of Cr atoms rather than Stoner-type itinerant ones. The DFT + DMFT calculations show a different coherent temperature for each spin component, demonstrating apparent strong spin-dependent electronic correlation effects in monolayer CrI3. Furthermore, we have explored the do**-dependent electronic structure of monolayer CrI3 and found that its electronic and magnetic properties are easily tunable by the hole-do**.
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Submitted 14 April, 2022;
originally announced April 2022.
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Targeted Writing and Deleting of Magnetic Skyrmions in Two-Terminal Nanowire Devices
Authors:
Soong-Geun Je,
Dickson Thian,
Xiaoye Chen,
Lisen Huang,
Dae-Han Jung,
Weilun Chao,
Ki-Suk Lee,
Jung-Il Hong,
Anjan Soumyanarayanan,
Mi-Young Im
Abstract:
Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. Here we demonstrate an alternative approach for wri…
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Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. Here we demonstrate an alternative approach for writing and deleting skyrmions using conventional electrical pulses within a simple, two-terminal wire geometry. X-ray microscopy experiments and micromagnetic simulations establish the observed skyrmion creation and annihilation as arising from Joule heating and Oersted field effects of the current pulses, respectively. The unique characteristics of these writing and deleting schemes, such as spatial and temporal selectivity, together with the simplicity of the 2-terminal device architecture, provide a flexible and scalable route to the viable applications of skyrmions.
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Submitted 26 March, 2022;
originally announced March 2022.
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Sign-tunable anisotropic magnetoresistance and electrically detectable dual magnetic phases in a helical antiferromagnet
Authors:
Jong Hyuk Kim,
Hyun Jun Shin,
Mi Kyung Kim,
Jae Min Hong,
Ki Won Jeong,
** Seok Kim,
Kyungsun Moon,
Nara Lee,
Young Jai Choi
Abstract:
The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the potential of implementing spintronic functionality in non-collinear antiferromagnets has not been clarified thus far. Here, we propose an AFM helimagnet of EuCo2…
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The helimagnetic order describes a non-collinear spin texture of antiferromagnets, arising from competing exchange interactions. Although collinear antiferromagnets are elemental building blocks of antiferromagnetic (AFM) spintronics, the potential of implementing spintronic functionality in non-collinear antiferromagnets has not been clarified thus far. Here, we propose an AFM helimagnet of EuCo2As2 as a novel single-phase spintronic material that exhibits a remarkable sign reversal of anisotropic magnetoresistance (AMR). The contrast in the AMR arises from two electrically distinctive magnetic phases with spin reorientation driven by magnetic field lying on the easy-plane, which switches the sign of the AMR from positive to negative. Further, various AFM memory states associated with the evolution of the spin structure under magnetic fields were identified theoretically, based on an easy-plane anisotropic spin model. These results reveal that non-collinear antiferromagnets hold potential for develo** spintronic devices.
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Submitted 21 March, 2022;
originally announced March 2022.
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Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet
Authors:
Dong Gun Oh,
Jong Hyuk Kim,
Mi Kyung Kim,
Ki Won Jeong Hyun Jun Shin,
Jae Min Hong,
** Seok Kim,
Kyungsun Moon,
Nara Lee,
Young Jai Choi
Abstract:
A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase materials solely governs dynamic transport, and antiferromagnets are considered promising candidates for spintronic technology. In this work, we demonstrated ant…
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A spin valve is a prototype of spin-based electronic devices found on ferromagnets, in which an antiferromagnet plays a supporting role. Recent findings in antiferromagnetic spintronics show that an antiferromagnetic order in single-phase materials solely governs dynamic transport, and antiferromagnets are considered promising candidates for spintronic technology. In this work, we demonstrated antiferromagnet-based spintronic functionality on an itinerant Ising antiferromagnet of Ca0.9Sr0.1Co2As2 by integrating nanoscale spin-valve-type structure and investigating anisotropic magnetic properties driven by spin-flips. Multiple stacks of 1 nm thick spin-valve-like unit are intrinsically embedded in the antiferromagnetic spin structure. In the presence of a rotating magnetic field, a new type of the spin-valve-like operation was observed for large anomalous Hall conductivity and anisotropic magnetoresistance, whose effects are maximized above the spin-flip transition. In addition, a joint experimental and theoretical study provides an efficient tool to read out various spin states, which scheme can be useful for implementing extensive spintronic applications.
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Submitted 21 March, 2022;
originally announced March 2022.
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Momentum-dependent oscillator strength crossover of excitons and plasmons in two-dimensional PtSe2
Authors:
**hua Hong,
Mark Kamper Svendsen,
Masanori Koshino,
Thomas Pichler,
Hua Xu,
Kazu Suenaga,
Kristian Sommer Thygesen
Abstract:
The 1T-phase layered PtX2 chalcogenides has attracted widespread interest due to its thickness dependent metal-semiconductor transition driven by strong interlayer coupling. While the ground state properties of this paradigmatic material system have been widely explored, its fundamental excitation spectrum remains poorly understood. Here we combine first principles calculations with momentum (q) r…
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The 1T-phase layered PtX2 chalcogenides has attracted widespread interest due to its thickness dependent metal-semiconductor transition driven by strong interlayer coupling. While the ground state properties of this paradigmatic material system have been widely explored, its fundamental excitation spectrum remains poorly understood. Here we combine first principles calculations with momentum (q) resolved electron energy loss spectroscopy (q-EELS) to study the collective excitations in 1T-PtSe2 from the monolayer limit to the bulk. At finite momentum transfer all the spectra are dominated by two distinct interband plasmons that disperse to higher energy with increasing q. Interestingly, the absence of long-range screening in the two-dimensional (2D) limit, inhibits the formation of long wavelength plasmons. Consequently, in the small-q limit, excitations in monolayer PtSe2 are exclusively of excitonic nature, and the loss spectrum coincides with the optical spectrum. Our work unravels the excited state spectrum of layered 1T-PtSe2 and establishes the qualitatively different momentum dependence of excitons and plasmons in 2D materials.
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Submitted 9 March, 2022;
originally announced March 2022.
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Synthesis of Core/Shell Ti/TiOx Photocatalyst via Single-Mode Magnetic Microwave Assisted Direct Oxidation of TiH2
Authors:
Kunihiko Kato,
Yunzi Xin,
Jeongsoo Hong,
Ken-ichi Katsumata,
Takashi Shirai
Abstract:
Submicron core/shell Ti/TiOx photocatalyst is successfully synthesized via single-mode magnetic microwave (SMMW) assisted direct oxidation of planetary ball-milled TiH2. The thickness of TiOx shell including highly concentrated defects such as Ti3+ and/or oxygen vacancies is controllable in the range from 6 to over 18 nm by varying the treatment time in the SMMW assisted reaction. In addition to i…
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Submicron core/shell Ti/TiOx photocatalyst is successfully synthesized via single-mode magnetic microwave (SMMW) assisted direct oxidation of planetary ball-milled TiH2. The thickness of TiOx shell including highly concentrated defects such as Ti3+ and/or oxygen vacancies is controllable in the range from 6 to over 18 nm by varying the treatment time in the SMMW assisted reaction. In addition to its quite narrow optical bandgap (1.34-2.69 eV) and efficient visible-light absorption capacity, the submicron Ti/TiOx particle exhibits superior photocatalytic performance towards H2 production from water under both UV and visible-light irradiation to compare with a commercial TiO2 photocatalyst (P-25). Such excellent performance can be achieved by the synergetic effect of enhancement in visible light absorption capacity and photo-excited carrier separation because of the highly concentrated surface defects and the specific Ti/TiOx core/shell structure, respectively.
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Submitted 2 February, 2022;
originally announced February 2022.
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Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors
Authors:
Yuxuan Lin,
Zafer Mutlu,
Gabriela Borin Barin,
Jenny Hong,
Juan Pablo Llinas,
Akimitsu Narita,
Hanuman Singh,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Jeffrey Bokor
Abstract:
Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a st…
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Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes.
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Submitted 23 January, 2022;
originally announced January 2022.
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Detecting symmetry breaking in magic angle graphene using scanning tunneling microscopy
Authors:
Jung Pyo Hong,
Tomohiro Soejima,
Michael P. Zaletel
Abstract:
A growing body of experimental work suggests that magic angle twisted bilayer graphene exhibits a "cascade" of spontaneous symmetry breaking transitions, sparking interest in the potential relationship between symmetry-breaking and superconductivity. However, it has proven difficult to find experimental probes which can unambiguously identify the nature of the symmetry breaking. Here we show how a…
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A growing body of experimental work suggests that magic angle twisted bilayer graphene exhibits a "cascade" of spontaneous symmetry breaking transitions, sparking interest in the potential relationship between symmetry-breaking and superconductivity. However, it has proven difficult to find experimental probes which can unambiguously identify the nature of the symmetry breaking. Here we show how atomically-resolved scanning tunneling microscopy can be used as a fingerprint of symmetry breaking order. By analyzing the pattern of sublattice polarization and "Kekulé" distortions in small magnetic fields, order parameters for each of the most competitive symmetry-breaking states can be identified. In particular, we show that the "Kramers intervalley coherent state," which theoretical work predicts to be the ground state at even integer fillings, shows a Kekulé distortion which emerges only in a magnetic field.
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Submitted 22 November, 2021; v1 submitted 27 October, 2021;
originally announced October 2021.
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Phonon anharmonicity: a pertinent review of recent progress and perspective
Authors:
Bin Wei,
Qiyang Sun,
Chen Li,
Jiawang Hong
Abstract:
Anharmonic lattice vibrations govern the thermal dynamics in materials and present how the atoms interact and how they conduct heat. An indepth understanding of the microscopic mechanism of phonon anharmonicity in condensed systems is critical for develo** better functional and energy materials. In recent years, a variety of novel behaviors in condense matters are driven by phonon anharmonic eff…
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Anharmonic lattice vibrations govern the thermal dynamics in materials and present how the atoms interact and how they conduct heat. An indepth understanding of the microscopic mechanism of phonon anharmonicity in condensed systems is critical for develo** better functional and energy materials. In recent years, a variety of novel behaviors in condense matters are driven by phonon anharmonic effects in some way or another, such as soft mode phase transition, negative thermal expansion, multiferroicity, ultralow thermal conductivity or high thermal resistance, and high-temperature superconductivity, etc. All these properties have endowed anharmonicity with many promising applications and provided remarkable opportunities for develo** anharmonicity engineering, regulating heat transport towards excellent performance in materials. In this work, we review the recent development of the study on phonon anharmonic effect and summarize its origination, influence and mechanism, research methods, and applications. Besides, the remaining challenges, future trends, and prospects of phonon anharmonicity are also put forward.
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Submitted 21 October, 2021;
originally announced October 2021.
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Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO$_{x}$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
Authors:
Jhen-Yong Hong,
Chun-Yen Chen,
Dah-Chin Ling,
Isidoro Martínez,
César González-Ruano,
Farkhad G. Aliev
Abstract:
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^γ$ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge's empirical relation,…
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Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^γ$ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge's empirical relation, we found that the Hooge's parameter $α$ and the exponent $γ$ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trap**/de-trap** process, along with the electric field-driven oxygen vacancy migration in the AlO$_x$ barrier, plays an essential role in the charge transport dynamics of AlO$_x$-based RS memory devices.
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Submitted 18 October, 2021;
originally announced October 2021.
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Slow oxidation of magnetite nanoparticles elucidates the limits of the Verwey transition
Authors:
Taehun Kim,
Sangwoo Sim,
Sumin Lim,
Midori Amano Patino,
Jaeyoung Hong,
Jisoo Lee,
Taeghwan Hyeon,
Yuichi Shimakawa,
Soonchil Lee,
J. Paul Attfield,
Je-Geun Park
Abstract:
Magnetite (Fe3O4) is of fundamental importance as the original magnetic material and also for the Verwey transition near T_V = 125 K, below which a complex lattice distortion and electron orders occur. The Verwey transition is suppressed by strain or chemical do** effects giving rise to well-documented first and second-order regimes, but the origin of the order change is unclear. Here, we show t…
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Magnetite (Fe3O4) is of fundamental importance as the original magnetic material and also for the Verwey transition near T_V = 125 K, below which a complex lattice distortion and electron orders occur. The Verwey transition is suppressed by strain or chemical do** effects giving rise to well-documented first and second-order regimes, but the origin of the order change is unclear. Here, we show that slow oxidation of monodisperse Fe3O4 nanoparticles leads to an intriguing variation of the Verwey transition that elucidates the do** effects. Exposure to various fixed oxygen pressures at ambient temperature leads to an initial drop to TV minima as low as 70 K after 45-75 days, followed by recovery to a constant value of 95 K after 160 days that persists in all experiments for aging times up to 1070 days. A physical model based on both do** and do**-gradient effects accounts quantitatively for this evolution and demonstrates that the persistent 95 K value corresponds to the lower limit for homogenously doped magnetite and hence for the first order regime. In comparison, further suppression down to 70 K results from inhomogeneous strains that characterize the second-order region. This work demonstrates that slow reactions of nanoparticles can give exquisite control and separation of homogenous and inhomogeneous do** or strain effects on an nm scale and offers opportunities for similar insights into complex electronic and magnetic phase transitions in other materials.
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Submitted 5 October, 2021;
originally announced October 2021.
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Zero Poisson' s Ratio and Suppressed Mechanical Anisotropy in BP/SnSe Van der Waals Heterostructure: A First-principles Study
Authors:
Qi Ren,
Xingyao Wang,
Yingzhuo Lun,
Xueyun Wang,
Jiawang Hong
Abstract:
Black phosphorene and its analogs have attracted intensive attention due to their unique puckered structures, anisotropic characteristics, and negative Poisson's ratio. The van der Waals heterostructures assembly by stacking different materials may show novel physical properties which the parent materials don't possess. In this work, the first-principles calculations were performed to study the me…
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Black phosphorene and its analogs have attracted intensive attention due to their unique puckered structures, anisotropic characteristics, and negative Poisson's ratio. The van der Waals heterostructures assembly by stacking different materials may show novel physical properties which the parent materials don't possess. In this work, the first-principles calculations were performed to study the mechanical properties of the BP/SnSe van der Waals heterostructure. Interestingly, a near-zero Poisson's ratio vzx was found in BP/SnSe heterostructure. In addition, compared to the parent materials BP and SnSe with strong in-plane anisotropic mechanical properties, the BP/SnSe heterostructure shows strongly suppressed anisotropy. Our findings suggest that the vdW heterostructure could show quite different mechanical properties from the parent materials and provide new opportunities for the mechanical applications of the heterostructures.
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Submitted 21 September, 2021;
originally announced September 2021.
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Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides
Authors:
Shisheng Li,
Yung-Chang Lin,
**hua Hong,
Bo Gao,
Hong En Lim,
Xu Yang,
Song Liu,
Yoshitaka Tateyama,
Kazuhito Tsukagoshi,
Yoshiki Sakuma,
Kazu Suenaga,
Takaaki Taniguchi
Abstract:
The usage of molten salts, e.g., Na2MoO4 and Na2WO4, has shown great success in the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). In comparison with the halide salt (i.e., NaCl, NaBr, KI)-assisted growth (Salt 1.0), the molten salt-assisted vapor-liquid-solid (VLS) growth technique (Salt 2.0) has improved the reproducibility, efficiency…
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The usage of molten salts, e.g., Na2MoO4 and Na2WO4, has shown great success in the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). In comparison with the halide salt (i.e., NaCl, NaBr, KI)-assisted growth (Salt 1.0), the molten salt-assisted vapor-liquid-solid (VLS) growth technique (Salt 2.0) has improved the reproducibility, efficiency and scalability of synthesizing 2D TMDCs. However, the growth of large-area MoSe2 and WTe2 is still quite challenging with the use Salt 2.0 technique. In this study, a renewed Salt 2.0 technique using mixed salts (e.g., Na2MoO4-Na2SeO3 and Na2WO4-Na2TeO3) is developed for the enhanced CVD growth of 2D MoSe2 and WTe2 crystals with large grain size and yield. Continuous monolayer MoSe2 film with grain size of 100-250 μm or isolated flakes up to ~ 450 μm is grown on a halved 2-inch SiO2/Si wafer. Our study further confirms the synergistic effect of Na+ and SeO32- in the enhanced CVD growth of wafer-scale monolayer MoSe2 film. And thus, the addition of Na2SeO3 and Na2TeO3 into the transition metal salts could be a general strategy for the enhanced CVD growth of many other 2D selenides and tellurides.
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Submitted 26 August, 2021;
originally announced August 2021.
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Understanding the roles of electronic effect in CO on Pt-Sn alloy surface via band structure measurements
Authors:
Jongkeun Jung,
Sungwoo Kang Laurent Nicolai,
Jisook Hong,
Jan Minár,
Inkyung Song,
Wonshik Kyung,
Soohyun Cho,
Beomseo Kim,
Jonathan D. Denlinger,
Francisco J. C. S. Aires,
Eric Ehret,
Philip N. Ross,
Jihoon Shim,
Slavomir Nemšák,
Doyoung Noh,
Seungwu Han,
Changyoung Kim,
Bong** S. Mun
Abstract:
Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption proce…
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Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a unique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption process. As the coverage of CO increases, the degree of charge transfer between CO and Pt shows clear difference to that of Pt-Sn. With comparison to DFT calculation results, the observed distinct features in the band structure are interpreted as backdonation bonding states of Pt molecular orbital to the 2π orbital of CO. Furthermore, the change in the surface charge concentration, measured from the Fermi surface area, shows Pt surface has a larger charge concentration change than Pt-Sn surface upon CO adsorption. The difference in the charge concentration change between Pt and Pt-Sn surfaces reflects the degree of electronic effects during CO adsorption on Pt-Sn.
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Submitted 9 August, 2021;
originally announced August 2021.
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Giant Anisotropic in-Plane Thermal Conduction Induced by Anomalous Phonons in Nearly-Equilaterally Structured PdSe2
Authors:
Bin Wei,
Junyan Liu,
Qingan Cai,
Ahmet Alatas,
Ayman H. said,
Chen Li,
Jiawang Hong
Abstract:
In two-dimensional materials, structure difference induces the difference in phonon dispersions, leading to the anisotropy of in-plane thermal transport. Here, we report an exceptional case in layered PdSe2, where the bonding, force constants, and lattice constants are nearly-equal along the in-plane crystallographic axis directions. The phonon dispersions show significant differences between the…
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In two-dimensional materials, structure difference induces the difference in phonon dispersions, leading to the anisotropy of in-plane thermal transport. Here, we report an exceptional case in layered PdSe2, where the bonding, force constants, and lattice constants are nearly-equal along the in-plane crystallographic axis directions. The phonon dispersions show significant differences between the Gamma-X and Gamma-Y directions, leading to the anisotropy of in-plane thermal conductivity with a ratio up to 1.8. Such anisotropy is not only unexpected in equilaterally structured (in-plane) materials but also comparable to the record in the non-equilaterally structured material reported to date. By combining inelastic X-ray scattering and first-principles calculations, we attribute such anisotropy to the low-energy phonons along Gamma-X, in particular, their lower group velocities and "avoided-crossing" behavior. The different bucking structures between a- (zigzag-type) and b-axis (flat-type) are mainly responsible for the unique phonon dynamics properties of PdSe2. The present results illustrate the unusual thermal conduction mechanism of the equilaterally structured materials and provide valuable insights on thermal management in electronic devices.
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Submitted 16 July, 2021;
originally announced July 2021.
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Matryoshka Phonon Twinning in alpha-GaN
Authors:
Bin Wei,
Qingan Cai,
Qiyang Sun,
Yaokun Su,
Ayman H. Said,
Douglas L. Abernathy,
Jiawang Hong,
Chen Li
Abstract:
Understanding lattice dynamics is crucial for effective thermal management in high-power electronic devices because phonons dominate thermal transport in most semiconductors. This study utilizes complementary inelastic X-ray and neutron scattering techniques and reports the temperature-dependent phonon dynamics of alpha-GaN, one of the most important third-generation power semiconductors. A promin…
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Understanding lattice dynamics is crucial for effective thermal management in high-power electronic devices because phonons dominate thermal transport in most semiconductors. This study utilizes complementary inelastic X-ray and neutron scattering techniques and reports the temperature-dependent phonon dynamics of alpha-GaN, one of the most important third-generation power semiconductors. A prominent Matryoshka phonon dispersion is discovered with the scattering tools and confirmed by the first-principles calculations. Such Matryoshka twinning throughout the three-dimension reciprocal space is demonstrated to amplify the anharmonicity of the related phonon modes through creating abundant three-phonon scattering channels and cutting the phonon lifetime of affected modes by more than 50%. Such phonon topology effectively contributes to the reduction of the in-plane thermal transport, thus the anisotropic thermal conductivity of alpha-GaN. The results not only have significant implications for engineering the thermal performance and other phonon-related properties of alpha-GaN, but also offer valuable insights on the role of anomalous phonon topology in thermal transport of other technically important semiconductors.
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Submitted 21 June, 2021;
originally announced June 2021.
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High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells
Authors:
Koosha Nassiri Nazif,
Alwin Daus,
Jiho Hong,
Nayeun Lee,
Sam Vaziri,
Aravindh Kumar,
Frederick Nitta,
Michelle Chen,
Siavash Kananian,
Raisul Islam,
Kwan-Ho Kim,
**-Hong Park,
Ada Poon,
Mark L. Brongersma,
Eric Pop,
Krishna C. Saraswat
Abstract:
Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional do** schemes have prevented most TMD solar cells from…
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Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional do** schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ cap** for do**, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.
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Submitted 24 June, 2021; v1 submitted 19 June, 2021;
originally announced June 2021.
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Fractional quantum Hall effect driven by multi-particle correlations in edge current
Authors:
Jongbae Hong
Abstract:
The fractional quantum Hall effect has been considered as a puzzling quantum many-body phenomenon that has yet to be fully explained. The plateau width and excitation energy gap are particularly problematic. We report here that those two are determined by degrees of multi-particle correlations among the skip** electrons forming the edge current flowing in incompressible strips (ISs). Considerati…
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The fractional quantum Hall effect has been considered as a puzzling quantum many-body phenomenon that has yet to be fully explained. The plateau width and excitation energy gap are particularly problematic. We report here that those two are determined by degrees of multi-particle correlations among the skip** electrons forming the edge current flowing in incompressible strips (ISs). Consideration of the total angular momentum of correlated skip** electrons and their images, which are introduced to eliminate the confining potential within the IS, yields additional Zeeman energies that hierarchically split the Landau levels (LLs) by correlation order. This level splitting produces all the odd-denominator plateaus and explains the occurrence of fractional charges, while the split distances representing the correlation strengths determine both plateau widths and excitation energy gaps. With such a scheme, we explicitly reproduce an experimental Hall resistivity curve for the lowest LL and reveal the characteristics of the half-filling state.
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Submitted 25 July, 2022; v1 submitted 24 May, 2021;
originally announced May 2021.
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Deciphering the Intense Post-Gap Absorptions of Monolayer Transition Metal Dichalcogenides
Authors:
**hua Hong,
Masanori Koshino,
Ryosuke Senga,
Thomas Pichler,
Hua Xu,
Kazu Suenaga
Abstract:
Rich valleytronics and diverse defect-induced or interlayer pre-bandgap excitonics have been extensively studied in transition metal dichalcogenides (TMDCs), a system with fascinating optical physics. However, more intense high-energy absorption peaks (~ 3 eV) above the bandgaps used to be long ignored and their underlying physical origin remains to be unveiled. Here, we employ momentum resolved e…
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Rich valleytronics and diverse defect-induced or interlayer pre-bandgap excitonics have been extensively studied in transition metal dichalcogenides (TMDCs), a system with fascinating optical physics. However, more intense high-energy absorption peaks (~ 3 eV) above the bandgaps used to be long ignored and their underlying physical origin remains to be unveiled. Here, we employ momentum resolved electron energy loss spectroscopy to measure the dispersive behaviors of the valley excitons and intense higher-energy peaks at finite momenta. Combined with accurate Bethe Salpeter equation calculations, non-band-nesting transitions at Q valley and at midpoint of KM are found to be responsible for the high-energy broad absorption peaks in tungsten dichalcogenides and present spin polarizations similar to A excitons, in contrast with the band-nesting mechanism in molybdenum dichalcogenides. Our experiment-theory joint research will offer insights into the physical origins and manipulation of the intense high-energy excitons in TMDCs-based optoelectronic devices.
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Submitted 1 April, 2021;
originally announced April 2021.
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Band-Edge Orbital Engineering of Perovskite Semiconductors for Optoelectronic Applications
Authors:
Gang Tang,
Philippe Ghosez,
Jiawang Hong
Abstract:
Lead (Pb) halide perovskites have achieved great success in recent years due to their excellent optoelectronic properties, which is largely attributed to the lone-pair s orbital-derived antibonding states at the valence band edge. Guided by the key band-edge orbital character, a series of ns2-containing (i.e., Sn2+, Sb3+, Bi3+) Pb-free perovskite alternatives have been explored as potential photov…
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Lead (Pb) halide perovskites have achieved great success in recent years due to their excellent optoelectronic properties, which is largely attributed to the lone-pair s orbital-derived antibonding states at the valence band edge. Guided by the key band-edge orbital character, a series of ns2-containing (i.e., Sn2+, Sb3+, Bi3+) Pb-free perovskite alternatives have been explored as potential photovoltaic candidates. On the other hand, based on the band-edge orbital components (i.e., M2+ s and p/X- p orbitals), a series of strategies have been proposed to optimize their optoelectronic properties by modifying the atomic orbitals and orbital interactions. Therefore, understanding the band-edge electronic features from the recently reported halide perovskites is essential for future material design and device optimization. Here, this Perspective first attempts to establish the band-edge orbital-property relationship using a chemically intuitive approach, and then rationalizes their superior properties and understands the trends in electronic properties. We hope that this Perspective will provide atomic-level guidance and insights toward the rational design of perovskite semiconductors with outstanding optoelectronic properties.
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Submitted 17 March, 2021;
originally announced March 2021.
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The Observation of Ferroelastic and Ferrielectric Domains in AgNbO3 Single Crystal
Authors:
Wei Zhao,
Zhengqian Fu,
Jianming Deng,
Song Li,
Yifeng Han,
Man-Rong Li,
Xueyun Wang,
Jiawang Hong
Abstract:
Compared to AgNbO3 based ceramics, the experimental investigations on the single crystalline AgNbO3, especially the ground state and ferroic domain structures, are not on the same level. Here in this work, based on successfully synthesized AgNbO3 single crystal using flux method, we observed the coexistence of ferroelastic and ferrielectric domain structures by a combination study of polarized lig…
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Compared to AgNbO3 based ceramics, the experimental investigations on the single crystalline AgNbO3, especially the ground state and ferroic domain structures, are not on the same level. Here in this work, based on successfully synthesized AgNbO3 single crystal using flux method, we observed the coexistence of ferroelastic and ferrielectric domain structures by a combination study of polarized light microscopy and piezoresponse force microscope, this finding may provide a new aspect for studying AgNbO3. The result also suggests a weak electromechanical response from the ferrielectric phase of AgNbO3 which is also supported by the transmission electron microscope characterization. Our results reveal that the AgNbO3 single crystal is in a polar ferrielectric phase at room temperature, clarifying its ground state which is controversial from the AgNbO3 ceramic materials.
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Submitted 5 March, 2021;
originally announced March 2021.
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Correlated composite approach to fractional quantum Hall effect via edge current
Authors:
Jongbae Hong,
Soo-Jong Rey
Abstract:
The fractional quantum Hall effect (FQHE) is extensively studied, but the explanation for Hall plateau widths and excitation energy gaps remains elusive. We study the effective theory of FQHE built upon experimental inputs of Hall current distribution, edge dynamics, and many-body correlations. We argue that correlated composites of integer spin, comprising electrons and their images, localized at…
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The fractional quantum Hall effect (FQHE) is extensively studied, but the explanation for Hall plateau widths and excitation energy gaps remains elusive. We study the effective theory of FQHE built upon experimental inputs of Hall current distribution, edge dynamics, and many-body correlations. We argue that correlated composites of integer spin, comprising electrons and their images, localized at the edge of the incompressible strip are the basic transport entity. We show in the lowest Landau level that Zeeman interactions of these composites produce all odd denominator plateaus and effective fractional charges. Utilizing field-dependent chemical potential and effective g-factor, we fully explain the observed Hall resistivity curve and excitation energy gaps of the half-filling family. The plateau heights are systematically generated by multi-particle correlations, whereas the plateau widths and excitation energy gaps are determined by the correlation strengths. We explicitly show that the Drude-like behavior at half-filling follows from equal strength of multi-particle correlations.
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Submitted 25 July, 2022; v1 submitted 17 February, 2021;
originally announced February 2021.
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Symmetry-Driven Spin-Wave Gap Modulation in Nanolayered SrRuO3/SrTiO3 Heterostructures: Implications for Spintronic Applications
Authors:
Seung Gyo Jeong,
Hyeonbeom Kim,
Sung Ju Hong,
Dongseok Suh,
Woo Seok Choi
Abstract:
A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to it…
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A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to its strong magnetic anisotropy. In this paper, we propose a method to control the spin-wave dynamics by nanolayer designing of the SrRuO3/SrTiO3 superlattices. In particular, the six-unit-cell-thick SrRuO3 layers within the superlattices undergo a phase transition in crystalline symmetry from orthorhombic to tetragonal, as the thickness of the SrTiO3 layers is modulated with atomic-scale precision. Consequently, the magnetic anisotropy, anomalous Hall conductivity, and spin-wave gap could be systematically manipulated. Such customization of magnetic anisotropy via nanoscale heterostructuring offers a novel control knob to tailor the magnon excitation energy for future spintronic applications, including magnon waveguides and filters. Our nanolayer approach unveils the important correlation between the tunable lattice degrees of freedom and spin dynamics in topologically non-trivial magnetic materials.
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Submitted 5 February, 2021;
originally announced February 2021.
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Tunable Do** of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
Authors:
Shisheng Li,
**hua Hong,
Bo Gao,
Yung-Chang Lin,
Hong En Lim,
Xueyi Lu,
**g Wu,
Song Liu,
Yoshitaka Tateyama,
Yoshiki Sakuma,
Kazuhito Tsukagoshi,
Kazu Suenaga,
Takaaki Taniguchi
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic…
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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V)-doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2. Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2-based field-effect transistors have been substantially improved (from ~10-8 to 10-5 A; ~104 to 108), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.
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Submitted 29 January, 2021;
originally announced January 2021.
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Unitary Symmetry-Protected Non-Abelian Statistics of Majorana Modes
Authors:
Jian-Song Hong,
Ting-Fung Jeffrey Poon,
Long Zhang,
Xiong-Jun Liu
Abstract:
Symmetry-protected topological superconductors (TSCs) can host multiple Majorana zero modes (MZMs) at their edges or vortex cores, while whether the Majorana braiding in such systems is non-Abelian in general remains an open question. Here we uncover in theory the unitary symmetry-protected non-Abelian statisitcs of MZMs and propose the experimental realization. We show that braiding two vortices…
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Symmetry-protected topological superconductors (TSCs) can host multiple Majorana zero modes (MZMs) at their edges or vortex cores, while whether the Majorana braiding in such systems is non-Abelian in general remains an open question. Here we uncover in theory the unitary symmetry-protected non-Abelian statisitcs of MZMs and propose the experimental realization. We show that braiding two vortices with each hosting $N$ unitary symmetry-protected MZMs generically reduces to $N$ independent sectors, with each sector braiding two different Majorana modes. This renders the unitary symmetry-protected non-Abelian statistics. As a concrete example, we demonstrate the proposed non-Abelian statistics in a spin-triplet TSC which hosts two MZMs at each vortex and, interestingly, can be precisely mapped to a quantum anomalous Hall insulator. Thus the unitary symmetry-protected non-Abelian statistics can be verified in the latter insulating phase, with the application to realizing various topological quantum gates being studied. Finally, we propose a novel experimental scheme to realize the present study in an optical Raman lattice. Our work opens a new route for Majorana-based topological quantum computation.
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Submitted 29 October, 2020; v1 submitted 15 October, 2020;
originally announced October 2020.
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Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides
Authors:
Songhua Cai,
Yingzhuo Lun,
Dianxiang Ji,
Lu Han,
Changqing Guo,
Yipeng Zang,
Si Gao,
Yifan Wei,
Min Gu,
Chunchen Zhang,
Zhengbin Gu,
Xueyun Wang,
Christopher Addiego,
Daining Fang,
Yuefeng Nie,
Jiawang Hong,
Peng Wang,
Xiaoqing Pan
Abstract:
Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial rever…
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Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.
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Submitted 7 September, 2020;
originally announced September 2020.
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Layer Edge States Stabilized by Internal Electric Fields in Two-dimensional Hybrid Perovskites
Authors:
Jisook Hong,
David Prendergast,
Liang Z. Tan
Abstract:
Two-dimensional (2D) organic-inorganic hybrid perovskites have been intensively explored for recent years, due to their tunable band gaps and exciton binding energies, and increased stability with respect to three-dimensional (3D) hybrid perovskites. There were fascinating experimental observations suggesting the existence of localized edge states in 2D hybrid perovskites which facilitate extremel…
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Two-dimensional (2D) organic-inorganic hybrid perovskites have been intensively explored for recent years, due to their tunable band gaps and exciton binding energies, and increased stability with respect to three-dimensional (3D) hybrid perovskites. There were fascinating experimental observations suggesting the existence of localized edge states in 2D hybrid perovskites which facilitate extremely efficient electron-hole dissociation and long carrier lifetimes. The observations and explanations of the edge states are not quite converging implying that there can be multiple origins for the edge state formation. Using first principles calculations, we demonstrate that layer edge states are stabilized by internal electric fields created by polarized molecular alignment of organic cations in 2D hybrid perovskites when they are two layers or thicker. Our study gives a simple physical explanation of the edge state formation, and it will pave the way for designing and manipulating layer edge states for optoelectronic applications.
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Submitted 26 August, 2020;
originally announced August 2020.
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Orbital-Energy Splitting in Anion Ordered Ruddlesden-Popper Halide Perovskites for Tunable Optoelectronic Applications
Authors:
Gang Tang,
Vei Wang,
Yajun Zhang,
Philippe Ghosez,
Jiawang Hong
Abstract:
The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations…
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The electronic orbital characteristics at the band edges plays an important role in determining the electrical, optical and defect properties of perovskite photovoltaic materials. It is highly desirable to establish the relationship between the underlying atomic orbitals and the optoelectronic properties as a guide to maximize the photovoltaic performance. Here, using first-principles calculations and taking anion ordered Ruddlesden-Popper (RP) phase halide perovskites Cs$_{n+1}$Ge$_n$I$_{n+1}$Cl$_{2n}$ as an example, we demonstrate how to rationally optimize the optoelectronic properties (e.g., band gap, transition dipole matrix elements, carrier effective masses, band width) through a simple band structure parameter. Our results show that reducing the splitting energy $|Δc|$ of p orbitals of B-site atom can effectively reduce the band gap and carrier effective masses while greatly improving the optical absorption in the visible region. Thereby, the orbital-property relationship with $Δc$ is well established through biaxial compressive strain. Finally, it is shown that this approach can be reasonably extended to several other non-cubic halide perovskites with similar p orbitals characteristics at the conduction band edges. Therefore, we believe that our proposed orbital engineering approach provides atomic-level guidance for understanding and optimizing the device performance of layered perovskite solar cells.
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Submitted 28 May, 2020;
originally announced May 2020.
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Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6
Authors:
Jianming Deng,
Xingan Jiang,
Yanyu Liu,
Wei Zhao,
Yun Li,
Ziyan Gao,
Peng Lv,
Sheng Xu,
Tian-Long Xia,
**chen Wang,
Meixia Wu,
Zishuo Yao,
Xueyun Wang,
Jiawang Hong
Abstract:
The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides…
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The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.
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Submitted 30 March, 2020;
originally announced March 2020.
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Domain evolution in bended freestanding BaTiO3 ultrathin films: a phase-field simulation
Authors:
Changqing Guo,
Guohua Dong,
Ziyao Zhou,
Ming Liu,
Houbing Huang,
Jiawang Hong,
Xueyun Wang
Abstract:
Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate from the ferroelectric domain evolution during the bending, which is difficult to observe in experiments. Therefore, understanding the relation among the bendi…
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Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate from the ferroelectric domain evolution during the bending, which is difficult to observe in experiments. Therefore, understanding the relation among the bending deformation, thickness of the films, and the domain dynamics is critical for their potential applications in flexible ferroelectric devices. Here, we reported the dynamics of ferroelectric polarization in the freestanding BaTiO3 ultrathin films in the presence of large bending deformation up to 40° using phase-field simulation. The ferroelectric domain evolution reveals the transition from the flux-closure to a/c domains with "vortex-like" structures, which caused by the increase of out-of-plane ferroelectric polarization. Additionally, by varying the film thickness in the identical bending situation, we found the a/c phase with "vortex-like" structure emerges only as the film thickness reached 12 nm or higher. Results from our investigations provide instructive information for the microstructure evolution of bending ferroelectric perovskite oxide films, which could serve as guide for the future application of ferroelectric films on flexible electronic devices.
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Submitted 29 March, 2020;
originally announced March 2020.
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Screening piezoelectricity in determination of flexoelectric coefficient at nanoscale
Authors:
Yingzhuo Lun,
Hao Zhou,
Di Yao,
Xueyun Wang,
Jiawang Hong
Abstract:
Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by…
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Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by screening piezoelectricity. Our results show that the flexoelectricity reduces the nanopillar stiffness while the piezoelectricity enhances it. With careful design of the shape of the nanopillars and measuring their stiffness difference, the flexoelectric coefficient can be obtained with the piezoelectric contribution eliminated completely. This approach avoids the measurement of electrical properties with dynamic load, which helps to reduce the challenge of flexoelectric measurement at nanoscale. Our work will be beneficial to quantitative characterization of flexoelectric properties and design of flexoelectric devices at nanoscale.
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Submitted 27 March, 2020;
originally announced March 2020.
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Enhancement of Giant Rashba Splitting in BiTeI under Asymmetric Interlayer Interaction
Authors:
Taesu Park,
Jisook Hong,
Ji Hoon Shim
Abstract:
We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer recedes from the Bi layer. Our results indicate that the RSS can be sensitively increased by introducing a vacancy on the Te site to make effective Bi-Te distance…
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We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer recedes from the Bi layer. Our results indicate that the RSS can be sensitively increased by introducing a vacancy on the Te site to make effective Bi-Te distance shorter. It is also found that the difference of Te p orbital character between two spin-split bands increases when the RSS is developed along crystal momentum, which supports asymmetric interlayer interaction in the spin-split bands. Our work suggests that the modification of interlayer interaction is an effective approach in the modeling of the RSS in BiTeI and other layered materials.
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Submitted 4 March, 2020;
originally announced March 2020.
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Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain
Authors:
Peng Lv,
Gang Tang,
Yanyu Liu,
Yingzhuo Lun,
Xueyun Wang,
Jiawang Hong
Abstract:
Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates…
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Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.
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Submitted 26 February, 2020;
originally announced February 2020.
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Flexo-diffusion effect: the strong influence on lithium diffusion induced by strain gradient
Authors:
Gao Xu,
Feng Hao,
Mouyi Weng,
Jiawang Hong,
Feng Pan,
Daining Fang
Abstract:
Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) sig…
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Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect lithium (Li) diffusion rate in solid state electrolytes and electrode materials of LIBs. In this study, we find that strain gradient in bilayer graphene (BLG) significantly affects Li diffusion barrier, which is termed as the flexo-diffusion effect, through first-principles calculations. The Li diffusion barrier substantially decreases/increases under the positive/negative strain gradient, leading to the change of Li diffusion coefficient in several orders of magnitude at 300 K. Interestingly, the regulation effect of strain gradient is much more significant than that of uniform strain field, which can have a remarkable effect on the rate performance of batteries, with a considerable increase in the ionic conductivity and a slight change of the original material structure. Moreover, our ab initio molecular dynamics simulations (AIMD) show that the asymmetric distorted lattice structure provides a driving force for Li diffusion, resulting in oriented diffusion along the positive strain gradient direction. These findings could extend present LIBs technologies by introducing the novel strain gradient engineering.
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Submitted 13 February, 2020;
originally announced February 2020.