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Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators
Authors:
Andrea Ronchi,
Paolo Franceschini,
Andrea De Poli,
Pía Homm,
Ann Fitzpatrick,
Francesco Maccherozzi,
Gabriele Ferrini,
Francesco Banfi,
Sarnjeet S. Dhesi,
Mariela Menghini,
Michele Fabrizio,
Jean-Pierre Locquet,
Claudio Giannetti
Abstract:
Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation.
Here, we combine time-resolved X-ray microscop…
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Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation.
Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V$_2$O$_3$, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.
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Submitted 28 June, 2022; v1 submitted 10 September, 2021;
originally announced September 2021.
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Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering
Authors:
P. Homm,
M. Menghini,
J. W. Seo,
S. Peters,
J. -P. Locquet
Abstract:
Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or do** are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in t…
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Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure or do** are varied giving rise to different structural, magnetic or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy we demonstrate a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a colossal change in room temperature resistivity (DR/R up to 100,000 %) and a broad range of optical constant values, as consequence of a strain-modulated bandgap. We propose a new phase diagram for pure and Cr-doped V2O3 thin films with the engineered in-plane lattice constant as a tuneable parameter. Our results demonstrate that controlling phase transitions in correlated systems by epitaxial strain offers a radical new approach to create the next generation of Mott devices.
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Submitted 12 January, 2021;
originally announced January 2021.
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Non-thermal light-assisted resistance collapse in a V$_2$O$_3$-based Mott-insulator device
Authors:
Andrea Ronchi,
Paolo Franceschini,
Pia Homm,
Marco Gandolfi,
Gabriele Ferrini,
Stefania Pagliara,
Francesco Banfi,
Mariela Menghini,
Jean-Pierre Locquet,
Claudio Giannetti
Abstract:
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure and light excitation. The ultimate goal is to achieve the complete control of the electron…
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The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure and light excitation. The ultimate goal is to achieve the complete control of the electronic phase transformation, with dramatic impact on the performance, for example, of resistive switching devices. Here, we investigate the simultaneous effect of external voltage and excitation by ultrashort light pulses on a single Mottronic device based on a V$_2$O$_3$ epitaxial thin film. The experimental results, supported by finite-element simulations of the thermal problem, demonstrate that the combination of light excitation and external electrical bias drives a volatile resistivity drop which goes beyond the combined effect of laser and Joule heating. Our results impact on the development of protocols for the non-thermal control of the resistive switching transition in correlated materials.
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Submitted 13 April, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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Early-stage dynamics of metallic droplets embedded in the nanotextured Mott insulating phase of V$_2$O$_3$
Authors:
Andrea Ronchi,
Pía Homm,
Mariela Menghini,
Paolo Franceschini,
Francesco Maccherozzi,
Francesco Banfi,
Gabriele Ferrini,
Federico Cilento,
Fulvio Parmigiani,
Sarnjeet S. Dhesi,
Michele Fabrizio,
Jean-Pierre Locquet,
Claudio Giannetti
Abstract:
Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (\textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated materials and nano-devices. A paradigmatic case is the \textit{IMT} in V$_2$O$_3$, for which the mechanism that leads to the nucleation and growth of metallic nan…
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Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (\textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated materials and nano-devices. A paradigmatic case is the \textit{IMT} in V$_2$O$_3$, for which the mechanism that leads to the nucleation and growth of metallic nano-droplets out of the supposedly homogeneous Mott insulating phase is still a mystery.
Here, we combine X-ray photoemission electron microscopy and ultrafast non-equilibrium optical spectroscopy to investigate the early stage dynamics of isolated metallic nano-droplets across the \textit{IMT} in V$_2$O$_3$ thin films. Our experiments show that the low-temperature monoclinic antiferromagnetic insulating phase is characterized by the spontaneous formation of striped polydomains, with different lattice distortions. The insulating domain boundaries accommodate the birth of metallic nano-droplets, whose non-equilibrium expansion can be triggered by the photo-induced change of the 3$d$-orbital occupation. We address the relation between the spontaneous nanotexture of the Mott insulating phase in V$_2$O$_3$ and the timescale of the metallic seeds growth. We speculate that the photoinduced metallic growth can proceed along a non-thermal pathway in which the monoclinic lattice symmetry of the insulating phase is partially retained.
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Submitted 6 August, 2019; v1 submitted 10 July, 2018;
originally announced July 2018.
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Ultrafast orbital manipulation and Mott physics in multi-band correlated materials
Authors:
Andrea Ronchi,
Paolo Franceschini,
Laura Fanfarillo,
Pía Homm,
Mariela Menghini,
Simone Peli,
Gabriele Ferrini,
Francesco Banfi,
Federico Cilento,
Andrea Damascelli,
Fulvio Parmigiani,
Jean-Pierre Locquet,
Michele Fabrizio,
Massimo Capone,
Claudio Giannetti
Abstract:
Multiorbital correlated materials are often on the verge of multiple electronic phases (metallic, insulating, super- conducting, charge and orbitally ordered), which can be explored and controlled by small changes of the external parameters. The use of ultrashort light pulses as a mean to transiently modify the band population is leading to fundamentally new results. In this paper we will review r…
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Multiorbital correlated materials are often on the verge of multiple electronic phases (metallic, insulating, super- conducting, charge and orbitally ordered), which can be explored and controlled by small changes of the external parameters. The use of ultrashort light pulses as a mean to transiently modify the band population is leading to fundamentally new results. In this paper we will review recent advances in the field and we will discuss the pos- sibility of manipulating the orbital polarization in correlated multi-band solid state systems. This technique can provide new understanding of the ground state properties of many interesting classes of quantum materials and offers a new tool to induce transient emergent properties with no counterpart at equilibrium. We will address: the discovery of high-energy Mottness in superconducting copper oxides and its impact on our understanding of the cuprate phase diagram; the instability of the Mott insulating phase in photoexcited vanadium oxides; the manipulation of orbital-selective correlations in iron-based superconductors; the pum** of local electronic excitons and the consequent transient effective quasiparticle cooling in alkali-doped fullerides. Finally, we will discuss a novel route to manipulate the orbital polarization in a a k-resolved fashion.
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Submitted 24 January, 2018;
originally announced January 2018.
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Collapse of the low temperature insulating state in Cr-doped V$_2$O$_3$ thin films
Authors:
Pía Homm,
Leander Dillemans,
Mariela Menghini,
Bart Van Bilzen,
Petar Bakalov,
Chen-Yi Su,
Ruben Lieten,
Michel Houssa,
Davoud Nasr Esfahani,
Lucian Covaci,
Francois Peeters,
** Won Seo,
Jean-Pierre Locquet
Abstract:
We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low do** samples (between $1\%$ and $3\%$), a collapse of the insulating state…
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We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low do** samples (between $1\%$ and $3\%$), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for do** levels below $3\%$ and increases the room temperature resistivity towards the values of Cr-doped V$_2$O$_3$ single crystals. It is well-know that oxygen excess stabilizes a metallic state in V$_2$O$_3$ single crystals. Hence, we propose that Cr do** promotes oxygen excess in our films during deposition leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V$_2$O$_3$ films can be interesting candidates for field effect devices.
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Submitted 19 September, 2015;
originally announced September 2015.
