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Quantitative determination of twist angle and strain in Van der Waals moiré superlattices
Authors:
Steven J. Tran,
Jan-Lucas Uslu,
Mihir Pendharkar,
Joe Finney,
Aaron L. Sharpe,
Marisa Hocking,
Nathan J. Bittner,
Kenji Watanabe,
Takashi Taniguchi,
Marc A. Kastner,
Andrew J. Mannix,
David Goldhaber-Gordon
Abstract:
Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezo…
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Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos which drive the scanning probe, and thermally-driven slow relative drift between probe and sample, produce systematic errors in the extraction of lattice vectors. In this Letter, we identify the errors and provide a protocol to correct for them. Applying this protocol to an ensemble of ten successive scans of near-magic-angle twisted bilayer graphene, we are able to reduce our errors in extracting lattice vectors to less than 1%. This translates to extracting twist angles with a statistical uncertainty less than 0.001° and uniaxial heterostrain with uncertainty on the order of 0.002%.
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Submitted 12 June, 2024;
originally announced June 2024.
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Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices
Authors:
Rupini V. Kamat,
Aaron L. Sharpe,
Mihir Pendharkar,
Jenny Hu,
Steven J. Tran,
Gregory Zaborski Jr.,
Marisa Hocking,
Joe Finney,
Kenji Watanabe,
Takashi Taniguchi,
Marc A. Kastner,
Andrew J. Mannix,
Tony Heinz,
David Goldhaber-Gordon
Abstract:
The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital fe…
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The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30 degree ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0 degree, not 30 degree, relative twist angle. We confirm this alignment by torsional force microscopy (TFM) of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, non-aligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures.
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Submitted 28 May, 2024;
originally announced May 2024.
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Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces
Authors:
Marisa Hocking,
Christina E. Henzinger,
Steven Tran,
Mihir Pendharkar,
Nathan J. Bittner,
Kenji Watanabe,
Takashi Taniguchi,
David Goldhaber-Gordon,
Andrew J. Mannix
Abstract:
New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the…
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New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation.
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Submitted 14 March, 2024;
originally announced March 2024.
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Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition
Authors:
Zhepeng Zhang,
Lauren Hoang,
Marisa Hocking,
Jenny Hu,
Gregory Zaborski Jr.,
Pooja Reddy,
Johnny Dollard,
David Goldhaber-Gordon,
Tony F. Heinz,
Eric Pop,
Andrew J. Mannix
Abstract:
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly cry…
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Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled do**. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
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Submitted 6 March, 2024;
originally announced March 2024.
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Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices
Authors:
Mihir Pendharkar,
Steven J. Tran,
Gregory Zaborski Jr.,
Joe Finney,
Aaron L. Sharpe,
Rupini V. Kamat,
Sandesh S. Kalantre,
Marisa Hocking,
Nathan J. Bittner,
Kenji Watanabe,
Takashi Taniguchi,
Bede Pittenger,
Christina J. Newcomb,
Marc A. Kastner,
Andrew J. Mannix,
David Goldhaber-Gordon
Abstract:
In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and map** its s…
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In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and map** its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that Torsional Force Microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of Van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN), and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an AFM cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of VdW flakes to support predictable moiré heterostructure fabrication.
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Submitted 20 December, 2023; v1 submitted 17 August, 2023;
originally announced August 2023.
