Showing 1–6 of 6 results for author: Ho, D Q

Fermi-level pinning in ErAs nanoparticles embedded in III-V semiconductors

Authors: Ruiqi Hu, Dai Q. Ho, Quang To, Garnett W. Bryant, Anderson Janotti

Abstract: Embedding rare-earth pnictide (RE-V) nanoparticles into III-V semiconductors enables unique optical, electrical, and thermal properties, with applications in THz photoconductive switches, tunnel junctions, and thermoelectric devices. Despite the high structural quality and control over growth, particle size, and density, the underlying electronic structure of these nanocomposite materials has only… ▽ More Embedding rare-earth pnictide (RE-V) nanoparticles into III-V semiconductors enables unique optical, electrical, and thermal properties, with applications in THz photoconductive switches, tunnel junctions, and thermoelectric devices. Despite the high structural quality and control over growth, particle size, and density, the underlying electronic structure of these nanocomposite materials has only been hypothesized. Basic questions about the metallic or semiconducting nature of the nanoparticles (that are typically < 3 nm in diameter) have remained unanswered. Using first-principles calculations, we investigated the structural and electronic properties of ErAs nanoparticles in AlAs, GaAs, InAs, and their alloys. Formation energies of the ErAs nanoparticles with different shapes and sizes (i.e., from cubic to spherical, with 1.14 nm, 1.71 nm, and 2.28 nm diameters) show that spherical nanoparticles are the most energetically favorable. As the diameter increases, the Fermi level is lowered from near the conduction band to the middle of the gap. For the lowest energy nanoparticles, the Fermi level is pinned near the mid-gap, at about 0.8 eV above the valence band in GaAs and about 1.2 eV in AlAs, and it is resonant in the conduction band in InAs. Our results show that the Fermi level is pinned on an absolute energy scale once the band alignment at AlAs/GaAs/InAs interfaces is considered, offering insights into the rational design of these nanocomposite materials. △ Less

Submitted 19 December, 2023; originally announced December 2023.

Non-trivial topology in rare-earth monopnictides from dimensionality reduction

Authors: Dai Q. Ho, Ruiqi Hu, D. Quang To, Garnett W. Bryant, Anderson Janotti

Abstract: Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Brillouin zone edges and hole pockets at the zone center. Instead, taking non-magnetic LaSb as an example, we find the emergence of a quantum spin Hall insulator phase in LaSb(001) films as the thickness is reduced to 7, 5,… ▽ More Thin films of rare-earth monopnictide semimetals are expected to turn into semiconductors due to quantum confinement effect, which lifts the overlap between electron pockets at Brillouin zone edges and hole pockets at the zone center. Instead, taking non-magnetic LaSb as an example, we find the emergence of a quantum spin Hall insulator phase in LaSb(001) films as the thickness is reduced to 7, 5, or 3 monolayers. This is attributed to a strong quantum confinement effect on the in-plane electron pockets, and the lack of quantum confinement on the out-of-plane pocket in reciprocal space projected onto zone center, leading to a band inversion. Spin-orbit coupling opens a sizeable non-trivial gap in the band structure of the thin films. Such effect is shown to be general in rare-earth monopnictides and may lead to interesting phenomena when coupled with the 4f magnetic moments present in other members of this family of materials. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Tuning the Band Topology of GdSb by Epitaxial Strain

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Aaron N. Engel, Shoaib Khalid, Connor P. Dempsey, Mihir Pendharkar, Yu Hao Chang, Shinichi Nishihaya, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in b… ▽ More Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature. △ Less

Submitted 18 April, 2023; v1 submitted 28 November, 2022; originally announced November 2022.

Tuning the Many-body Interactions in a Helical Luttinger Liquid

Authors: Junxiang Jia, Elizabeth Marcellina, Anirban Das, Michael S. Lodge, BaoKai Wang, Duc Quan Ho, Riddhi Biswas, Tuan Anh Pham, Wei Tao, Cheng-Yi Huang, Hsin Lin, Arun Bansil, Shantanu Mukherjee, Bent Weber

Abstract: In one-dimensional (1D) systems, electronic interactions lead to a breakdown of Fermi liquid theory and the formation of a Tomonaga-Luttinger Liquid (TLL). The strength of its many-body correlations can be quantified by a single dimensionless parameter, the Luttinger parameter $K$, characterising the competition between the electrons' kinetic and electrostatic energies. Recently, signatures of a T… ▽ More In one-dimensional (1D) systems, electronic interactions lead to a breakdown of Fermi liquid theory and the formation of a Tomonaga-Luttinger Liquid (TLL). The strength of its many-body correlations can be quantified by a single dimensionless parameter, the Luttinger parameter $K$, characterising the competition between the electrons' kinetic and electrostatic energies. Recently, signatures of a TLL have been reported for the topological edge states of quantum spin Hall (QSH) insulators, strictly 1D electronic structures with linear (Dirac) dispersion and spin-momentum locking. Here we show that the many-body interactions in such helical Luttinger Liquid can be effectively controlled by the edge state's dielectric environment. This is reflected in a tunability of the Luttinger parameter $K$, distinct on different edges of the crystal, and extracted to high accuracy from the statistics of tunnelling spectra at tens of tunneling points. The interplay of topology and many-body correlations in 1D helical systems has been suggested as a potential avenue towards realising non-Abelian parafermions. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Mihir Pendharkar, Aaron N. Engel, Jason T. Dong, Shoaib Khalid, Yu Hao Chang, Taozhi Guo, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin… ▽ More Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study map** the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals. △ Less

Submitted 25 October, 2022; v1 submitted 4 August, 2022; originally announced August 2022.

Report number: Phys. Rev. Materials 6, L121201

Journal ref: Phys. Rev. Materials 6, L121201 (2022)

Bi2Se3 Growth on (001) GaAs Substrates for Terahertz Integrated Systems

Authors: Yongchen Liu, Wilder Acuna, Huairuo Zhang, Dai Q. Ho, Ruiqi Hu, Zhengtianye Wang, Anderson Janotti, Garnett Bryant, Albert V. Davydov, Joshua M. O. Zide, Stephanie Law

Abstract: Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different ma… ▽ More Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different classes of materials to perform different THz functions. However, to assemble an on-chip THz integrated system, we must understand how to integrate these different materials. Here, we explore the growth of Bi2Se3, a topological insulator (TI) material that could serve as a plasmonic waveguide in THz integrated devices, on technologically-important GaAs (001) substrates. We explore surface treatments and find that atomically smooth GaAs surface is critical to achieving high-quality Bi2Se3 films despite the relatively weak film/substrate interaction. Calculations indicate that the Bi2Se3/GaAs interface is likely selenium-terminated and shows no evidence of chemical bonding between the Bi2Se3 and the substrate. These results are a guide for integrating van der Waals materials with conventional semiconductor substrates and serve as the first steps toward achieving an on-chip THz integrated system. △ Less

Submitted 29 August, 2022; v1 submitted 4 February, 2022; originally announced February 2022.