Showing 1–15 of 15 results for author: Hlawacek, G

Ultralong-term high-density data storage with atomic defects in SiC

Authors: M. Hollenbach, C. Kasper, D. Erb, L. Bischoff, G. Hlawacek, H. Kraus, W. Kada, T. Ohshima, M. Helm, S. Facsko, V. Dyakonov, G. V. Astakhov

Abstract: There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we… ▽ More There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation. △ Less

Submitted 28 October, 2023; originally announced October 2023.

Comments: 8 pages, 4 figures

Journal ref: Adv. Funct. Mater. 23, 2313413 (2024)

Roadmap for focused ion beam technologies

Authors: Katja Höflich, Gerhard Hobler, Frances I. Allen, Tom Wirtz, Gemma Rius, Lisa McElwee-White, Arkady V. Krasheninnikov, Matthias Schmidt, Ivo Utke, Nico Klingner, Markus Osenberg, Rosa Córdoba, Flyura Djurabekova, Ingo Manke, Philip Moll, Mariachiara Manoccio, José Marıa De Teresa, Lothar Bischoff, Johann Michler, Olivier De Castro, Anne Delobbe, Peter Dunne, Oleksandr V. Dobrovolskiy, Natalie Frese, Armin Gölzhäuser , et al. (7 additional authors not shown)

Abstract: The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in mat… ▽ More The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout. △ Less

Submitted 6 October, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: This publication is based upon work from the COST Action FIT4NANO CA19140, supported by COST (European Cooperation in Science and Technology) https://www.cost.eu/. Financial support from COST Action CA19140 is acknowledged http://www.fit4nano.eu/ Version 3 has many text and language edits as well as layout tuning but no substantial new content

Universal radiation tolerant semiconductor

Authors: Alexander Azarov, Javier García Fernández, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Øystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov

Abstract: Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci… ▽ More Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors. △ Less

Submitted 14 August, 2023; v1 submitted 23 March, 2023; originally announced March 2023.

Journal ref: Nature Communications 14, 4855 (2023)

Deterministic multi-level spin orbit torque switching using He+ microscopy patterning

Authors: **u Kurian, Aleena Joseph, Salia Cherifi-Hertel, Ciaran Fowley, Gregor Hlawacek, Peter Dunne, Michelangelo Romeo, Gwenaël Atcheson, J. M. D. Coey, Bernard Doudin

Abstract: He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalabl… ▽ More He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with full deterministic control of the position and order of the individual switching elements. Key pattern design parameters are specified, opening a way to scalable multilevel switching devices. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Comments: 7 pages, 3 figures

Tailoring crosstalk between localized 1D spin-wave nanochannels using focused ion beams

Authors: Vadym Iurchuk, Javier Pablo-Navarro, Tobias Hula, Ryszard Narkowicz, Gregor Hlawacek, Lukas Körber, Attila Kákay, Helmut Schultheiss, Jürgen Fassbender, Kilian Lenz, Jürgen Lindner

Abstract: 1D spin-wave conduits are envisioned as nanoscale components of magnonics-based logic and computing schemes for future generation electronics. `A-la-carte methods of versatile control of the local magnetization dynamics in such nanochannels are highly desired for efficient steering of the spin waves in magnonic devices. Here, we present a study of localized dynamical modes in 1-$μ$m-wide Permalloy… ▽ More 1D spin-wave conduits are envisioned as nanoscale components of magnonics-based logic and computing schemes for future generation electronics. `A-la-carte methods of versatile control of the local magnetization dynamics in such nanochannels are highly desired for efficient steering of the spin waves in magnonic devices. Here, we present a study of localized dynamical modes in 1-$μ$m-wide Permalloy conduits probed by microresonator ferromagnetic resonance technique. We clearly observe the lowest-energy edge mode in the microstrip after its edges were finely trimmed by means of focused Ne$^+$ ion irradiation. Furthermore, after milling the microstrip along its long axis by focused ion beams, creating consecutively $\sim$50 and $\sim$100 nm gaps, additional resonances emerge and are attributed to modes localized at the inner edges of the separated strips. To visualize the mode distribution, spatially resolved Brillouin light scattering microscopy was used showing an excellent agreement with the ferromagnetic resonance data and confirming the mode localization at the outer/inner edges of the strips depending on the magnitude of the applied magnetic field. Micromagnetic simulations confirm that the lowest-energy modes are localized within $\sim$15-nm-wide regions at the edges of the strips and their frequencies can be tuned in a wide range (up to 5 GHz) by changing the magnetostatic coupling (i.e. spatial separation) between the microstrips. △ Less

Submitted 30 September, 2022; v1 submitted 27 September, 2022; originally announced September 2022.

Comments: 10 pages, 4 figures

Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents

Authors: Peter Dunne, Ciaran Fowley, Gregor Hlawacek, **u Kurian, Gwenaël Atcheson, Silviu Colis, Niclas Teichert, Bohdan Kundys, M. Venkatesan, Jürgen Lindner, Alina Maria Deac, Thomas M. Hermans, J. M. D. Coey, Bernard Doudin

Abstract: Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation c… ▽ More Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm$^{-2}$, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing. △ Less

Submitted 14 September, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: Main text: 22 pages, 3 figures, 2 tables, 1 TOC graphic. Included SI: 2 pages, 2 figures

An atomic force microscope integrated with a helium ion microscope for correlative nanocharacterization

Authors: Santiago H. Andany, Gregor Hlawacek, Stefan Hummel, Charlène Brillard, Mustafa Kangül, Georg E. Fantner

Abstract: In this work, we report the integration of an atomic force microscope (AFM) into a helium ion microscope (HIM). The HIM is a powerful instrument, capable of sub-nanometer resolution imaging and machining of nanoscale structures, while the AFM is a well-established versatile tool for multiparametric nanoscale characterization. Combining the two techniques opens the way for unprecedented, in situ, c… ▽ More In this work, we report the integration of an atomic force microscope (AFM) into a helium ion microscope (HIM). The HIM is a powerful instrument, capable of sub-nanometer resolution imaging and machining of nanoscale structures, while the AFM is a well-established versatile tool for multiparametric nanoscale characterization. Combining the two techniques opens the way for unprecedented, in situ, correlative analysis at the nanoscale. Nanomachining and analysis can be performed without contamination of the sample and environmental changes between processing steps. The practicality of the resulting tool lies in the complementarity of the two techniques. The AFM offers not only true 3D topography maps, something the HIM can only provide in an indirect way but also allows for nanomechanical property map**, as well as for electrical and magnetic characterization of the sample after focused ion beam materials modification with the HIM. The experimental setup is described and evaluated through a series of correlative experiments, demonstrating the feasibility of the integration. △ Less

Submitted 1 April, 2020; originally announced April 2020.

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Authors: Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek

Abstract: For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kine… ▽ More For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 10 pages, 6 figures

Journal ref: Beilstein Journal of Nanotechnology 9 (2018) 2883-2892

Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Authors: Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller, Hans-Jürgen Engelmann, Nico Klingner, Ahmed Gharbi, Raluca Tiron, Johannes von Borany, Gregor Hlawacek

Abstract: Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dyna… ▽ More Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of 10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation. △ Less

Submitted 1 October, 2019; v1 submitted 24 June, 2019; originally announced June 2019.

Visualization of steps and surface reconstructions in Helium Ion Microscopy with atomic precision

Authors: Gregor Hlawacek, Maciej Jankowski, Herbert Wormeester, Raoul van Gastel, Harold J. W. Zandvliet, Bene Poelsema

Abstract: Helium Ion Microscopy is known for its surface sensitivity and high lateral resolution. Here, we present results of a Helium Ion Microscopy based investigation of a surface confined alloy of Ag on Pt(111). Based on a change of the work function of 25\,meV across the atomically flat terraces we can distinguish Pt rich from Pt poor areas and visualize the single atomic layer high steps between the t… ▽ More Helium Ion Microscopy is known for its surface sensitivity and high lateral resolution. Here, we present results of a Helium Ion Microscopy based investigation of a surface confined alloy of Ag on Pt(111). Based on a change of the work function of 25\,meV across the atomically flat terraces we can distinguish Pt rich from Pt poor areas and visualize the single atomic layer high steps between the terraces. Furthermore, dechanneling contrast has been utilized to measure the periodicity of the hcp/fcc pattern formed in the 2--3 layers thick Ag/Pt alloy film. A periodicity of 6.65\,nm along the $\langle\overline{11}2\rangle$ surface direction has been measured. In terms of crystallography a hcp domain is obtained through a lateral displacement of a part of the outermost layer by $1/\sqrt{3}$ of a nearest neighbour spacing along $\langle\overline{11}2\rangle$. This periodicity is measured with atomic precision: coincidence between the Ag and the Pt lattices is observed for 23 Ag atoms on 24 Pt atoms. The findings are perfectly in line with results obtained with Low Energy Electron Microscopy and Phase Contrast Atomic Force Microscopy. △ Less

Submitted 17 November, 2015; v1 submitted 30 April, 2015; originally announced May 2015.

Comments: 15 pages, 7 figures

Journal ref: Ultramicroscopy 162 (2016) 17-24

Helium Ion Microscopy

Authors: Gregor Hlawacek, Vasilisa Veligura, Raoul van Gastel, Bene Poelsema

Abstract: Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano-fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano-structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close… ▽ More Helium Ion Microcopy (HIM) based on Gas Field Ion Sources (GFIS) represents a new ultra high resolution microscopy and nano-fabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nano-structures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as Neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review. △ Less

Submitted 11 January, 2014; v1 submitted 7 November, 2013; originally announced November 2013.

Comments: Revised version

Journal ref: Journal of Vacuum Science and Technology B 32(2), 020801 (2014)

To see or not to see: Imaging surfactant coated nano--particles using HIM and SEM

Authors: Gregor Hlawacek, Imtiaz Ahmad, Mark A. Smithers, E. Stefan Kooij

Abstract: Nano--particles are of great interest in fundamental and applied research. However, their accurate visualization is often difficult and the interpretation of the obtained images can be complicated. We present a comparative scanning electron microscopy and helium ion microscopy study of cetyltrimethylammonium--bromide (CTAB) coated gold nano--rods. Using both methods we show how the gold core as we… ▽ More Nano--particles are of great interest in fundamental and applied research. However, their accurate visualization is often difficult and the interpretation of the obtained images can be complicated. We present a comparative scanning electron microscopy and helium ion microscopy study of cetyltrimethylammonium--bromide (CTAB) coated gold nano--rods. Using both methods we show how the gold core as well as the surrounding thin CTAB shell can selectively be visualized. This allows for a quantitative determination of the dimensions of the gold core or the CTAB shell. The obtained CTAB shell thickness of 1.0 nm--1.5 nm is in excellent agreement with earlier results using more demanding and reciprocal space techniques. △ Less

Submitted 9 July, 2013; v1 submitted 26 April, 2013; originally announced April 2013.

Comments: revised version

Journal ref: Ultramicroscopy 135 89-97 (2013)

Nucleation and growth of thin films of rod--like conjugated molecules

Authors: Gregor Hlawacek, Christian Teichert

Abstract: Thin films formed from small molecules rapidly gain importance in different technological fields. To explain their growth, methods developed for zero--dimensional atoms as the film forming particles are applied. However, in organic thin film growth the dimensionality of the building blocks comes into play. Using the special case of the model molecule para--Sexiphenyl, we will emphasize the challen… ▽ More Thin films formed from small molecules rapidly gain importance in different technological fields. To explain their growth, methods developed for zero--dimensional atoms as the film forming particles are applied. However, in organic thin film growth the dimensionality of the building blocks comes into play. Using the special case of the model molecule para--Sexiphenyl, we will emphasize the challenges that arise from the anisotropic and one--dimensional nature of building blocks. Differences or common features with other rodlike molecules will be discussed. The typical morphologies encountered for this group of molecules and the relevant growth modes will be investigated. Special attention is given to the transition between flat lying and upright orientation of the building blocks during nucleation. We will further discuss methods to control the molecular orientation and describe the involved diffusion processes qualitatively and quantitatively. △ Less

Submitted 15 February, 2013; v1 submitted 18 January, 2013; originally announced January 2013.

Comments: as submitted to JPCM (revised version) fixed figures and a few lines of text

Journal ref: J. Phys.: Condens. Matter 25 (2013) 143202

The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir{111} supported graphene studied by LEEM

Authors: Fawad S. Khokhar, Gregor Hlawacek, Raoul van Gastel, Harold J. W. Zandvliet, Christian Teichert, Bene Poelsema

Abstract: The growth of para-sexiphenyl (6P) thin films as a function of substrate temperature on Ir{111} supported graphene flakes has been studied in real-time with Low Energy Electron Microscopy (LEEM). Micro Low Energy Electron Diffraction (μLEED) has been used to determine the structure of the different 6P features formed on the surface. We observe the nucleation and growth of a wetting layer consistin… ▽ More The growth of para-sexiphenyl (6P) thin films as a function of substrate temperature on Ir{111} supported graphene flakes has been studied in real-time with Low Energy Electron Microscopy (LEEM). Micro Low Energy Electron Diffraction (μLEED) has been used to determine the structure of the different 6P features formed on the surface. We observe the nucleation and growth of a wetting layer consisting of lying molecules in the initial stages of growth. Graphene defects -- wrinkles -- are found to be preferential sites for the nucleation of the wetting layer and of the 6P needles that grow on top of the wetting layer in the later stages of deposition. The molecular structure of the wetting layer and needles is found to be similar. As a result, only a limited number of growth directions are observed for the needles. In contrast, on the bare Ir{111} surface 6P molecules assume an upright orientation. The formation of ramified islands is observed on the bare Ir{111} surface at 320 K and 352 K, whereas at 405 K the formation of a continuous layer of upright standing molecules growing in a step flow like manner is observed. △ Less

Submitted 11 November, 2011; v1 submitted 2 July, 2011; originally announced July 2011.

Comments: 9 pages, 7 figures, Revised Version as accepted for publication in Surface Science

Journal ref: Surface Science, Volume 606, Issues 3-4, February 2012, Pages 475-480

Hierarchy of adhesion forces in patterns of photoreactive surface layers

Authors: G. Hlawacek, Q. Shen, C. Teichert, A. Lex, G. Trimmel, W. Kern

Abstract: Precise control of surface properties including electrical characteristics, wettability, and friction is a prerequisite for manufacturing modern organic electronic devices. The successful combination of bottom up approaches for aligning and orienting the molecules and top down techniques to structure the substrate on the nano and micrometer scale allows the cost efficient fabrication and integra… ▽ More Precise control of surface properties including electrical characteristics, wettability, and friction is a prerequisite for manufacturing modern organic electronic devices. The successful combination of bottom up approaches for aligning and orienting the molecules and top down techniques to structure the substrate on the nano and micrometer scale allows the cost efficient fabrication and integration of future organic light emitting diodes and organic thin film transistors. One possibility for the top down patterning of a surface is to utilize different surface free energies or wetting properties of a functional group. Here, we used friction force microscopy (FFM) to reveal chemical patterns inscribed by a photolithographic process into a photosensitive surface layer. FFM allowed the simultaneous visualization of at least three different chemical surface terminations. The underlying mechanism is related to changes in the chemical interaction between probe and film surface. △ Less

Submitted 15 October, 2008; originally announced October 2008.

Comments: 11 pages, 5 figures The following article has been submitted to Journal of Chemical Physics. After it is published, it will be found at http://jcp.aip.org/

Journal ref: The Journal of Chemical Physics, Vol. 130, No. 4. (2009), 044703