Showing 1–6 of 6 results for author: Hidding, J

Locally Phase-Engineered MoTe$_2$ for Near-Infrared Photodetectors

Authors: Jan Hidding, Cédric A. Cordero-Silis, Daniel Vaquero, Konstantinos P. Rompotis, Jorge Quereda, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus far, the potential benefits… ▽ More Transition metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications, owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus far, the potential benefits of phase-engineered TMD devices for optoelectronic applications are still largely unexplored. The dominant mechanisms involved in the photocurrent generation in these systems remain unclear, hindering further development of new all-2D optoelectronic devices. Here, we fabricate locally phase-engineered MoTe$_{2}$ optoelectronic devices, creating a metal (1T') semiconductor (2H) lateral junction and unveil the main mechanisms at play for photocurrent generation. We find that the photocurrent originates from the 1T'-2H junction, with a maximum at the 2H MoTe$_{2}$ side of the junction. This observation, together with the non-linear IV-curve, indicates that the photovoltaic effect plays a major role on the photon-to-charge current conversion in these systems. Additionally, the 1T'-2H MoTe$_{2}$ heterojunction device exhibits a fast optoelectronic response over a wavelength range of 700 nm to 1100 nm, with a rise and fall times of 113 $μ$s and 110 $μ$s, two orders of magnitude faster when compared to a directly contacted 2H MoTe$_{2}$ device. These results show the potential of local phase-engineering for all-2D optoelectronic circuitry. △ Less

Submitted 3 June, 2024; originally announced June 2024.

Crystallographic-dependent bilinear magnetoelectric resistance in a thin WTe$_2$ layer

Authors: Tian Liu, Arunesh Roy, Jan Hidding, Homayoun Jafari, Dennis K. de Wal, Jagoda Slawinska, Marcos H. D. Guimarães, Bart J. van Wees

Abstract: The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, unde… ▽ More The recently reported Bilinear Magnetoeletric Resistance (BMR) in novel materials with rich spin textures, such as bismuth selenide (Bi$_2$Se$_3$) and tungsten ditelluride (WTe$_2$), opens new possibilities for probing the spin textures via magneto-transport measurements. By its nature, the BMR effect is directly linked to the crystal symmetry of the materials and its spin texture. Therefore, understanding the crystallographic dependency of the effect is crucial. Here we report the observation of crystallographic-dependent BMR in thin WTe$_2$ layers and explore how it is linked to its spin textures. The linear response measured in first harmonic signals and the BMR measured in second harmonic signals are both studied under a wide range of magnitudes and directions of magnetic field, applied current and at different temperatures. We discover a three-fold symmetry contribution of the BMR when current is applied along the a-axis of the WTe$_2$ thin layer at 10 K, which is absent for when current is applied along the b-axis. △ Less

Submitted 2 October, 2023; originally announced October 2023.

The Role of Self-Torques in Transition Metal Dichalcogenide/Ferromagnet Bilayers

Authors: Jan Hidding, Klaiv Mërtiri, Fauzia Mujid, Ce Liang, Jiwoong Park, Marcos H. D. Guimarães

Abstract: Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in… ▽ More Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in single-layer ferromagnetic devices with magnitudes comparable to TMD/ferromagnetic devices. Here, we perform second-harmonic Hall SOT measurements on metal-organic chemical vapor deposition (MOCVD) grown MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices and compare them to a single-layer permalloy/Al$_{2}$O$_{3}$ device to accurately disentangle the role of self-torques from contributions from the TMD layer. We report a dam**-like self-torque conductivity of opposite sign in our single-layer permalloy/Al$_{2}$O$_{3}$ device compared to one MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ device, and find no significant one for all other MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices. This indicates a competition between the self-torque and the torque arising from the TMD layer, which would reduce the observed torque in these bilayers. In addition, we find a field-like spin-torque conductivity of comparable magnitude to control MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices, indicating only a minor role of the MoS$_{2}$ layer. Finally, we find a linear dependence of the SOT conductivity on the Hall bar leg/channel width ratio of our devices, indicating that the Hall bar dimensions are of significant importance for the reported SOT strength. Our results accentuate the importance of delicate details, like device asymmetry, Hall bar dimensions, and self-torque generation, for the correct disentanglement of the microscopic origins underlying the SOTs, essential for future energy-efficient spintronic applications. △ Less

Submitted 8 March, 2023; v1 submitted 7 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. B 108, 064419 (2023)

Interfacial Spin-Orbit Torques and Magnetic Anisotropy in WSe$_{2}$/Permalloy Bilayers

Authors: Jan Hidding, Sytze H. Tirion, Jamo Momand, Alexey Kaverzin, Maxim Mostovoy, Bart J. van Wees, Bart J. Kooi, Marcos H. D. Guimarães

Abstract: Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed… ▽ More Transition metal dichalcogenides (TMDs) are promising materials for efficient generation of current-induced spin-orbit torques on an adjacent ferromagnetic layer. Numerous effects, both interfacial and bulk, have been put forward to explain the different torques previously observed. Thus far, however, there is no clear consensus on the microscopic origin underlying the spin-orbit torques observed in these TMD/ferromagnet bilayers. To shine light on the microscopic mechanisms at play, here we perform thickness dependent spin-orbit torque measurements on the semiconducting WSe$_{2}$/permalloy bilayer with various WSe$_{2}$ layer thickness, down to the monolayer limit. We observe a large out-of-plane field-like torque with spin-torque conductivities up to $1\times10^4 ({\hbar}/2e) (Ωm)^{-1}$. For some devices, we also observe a smaller in-plane antidam**-like torque, with spin-torque conductivities up to $4\times10^{3} ({\hbar}/2e) (Ωm)^{-1}$, comparable to other TMD-based systems. Both torques show no clear dependence on the WSe$_{2}$ thickness, as expected for a Rashba system. Unexpectedly, we observe a strong in-plane magnetic anisotropy - up to about $6.6\times10^{4} erg/cm^{3}$ - induced in permalloy by the underlying hexagonal WSe$_{2}$ crystal. Using scanning transmission electron microscopy, we confirm that the easy axis of the magnetic anisotropy is aligned to the armchair direction of the WSe$_{2}$. Our results indicate a strong interplay between the ferromagnet and TMD, and unveil the nature of the spin-orbit torques in TMD-based devices. These findings open new avenues for possible methods for optimizing the torques and the interaction with interfaced magnets, important for future non-volatile magnetic devices for data processing and storage. △ Less

Submitted 9 September, 2021; v1 submitted 22 July, 2021; originally announced July 2021.

Comments: 19 pages, 3 figures

Journal ref: J. Phys. Mater. 4 04LT01 (2021)

Spin-Orbit Torques in Transition Metal Dichalcogenide/Ferromagnet Heterostructures

Authors: Jan Hidding, Marcos H. D. Guimarães

Abstract: In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a ferromagnetic layer to convert an applied charge current into a torque on the magnetization of the ferromagnet (FM). Transition metal dichalcogenides (TMDs) are promisin… ▽ More In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a ferromagnetic layer to convert an applied charge current into a torque on the magnetization of the ferromagnet (FM). Transition metal dichalcogenides (TMDs) are promising candidates for generating these torques with both high charge-to-spin conversion ratios, and symmetries and directions which are efficient for magnetization manipulation. Moreover, TMDs offer a wide range of attractive properties, such as large spin-orbit coupling, high crystalline quality and diverse crystalline symmetries. Although numerous studies were published on SOTs using TMD/FM heterostructures, we lack clear understanding of the observed SOT symmetries, directions, and strengths. In order to shine some light on the differences and similarities among the works in literature, in this mini-review we compare the results for various TMD/FM devices, highlighting the experimental techniques used to fabricate the devices and to quantify the SOTs, discussing their potential effect on the interface quality and resulting SOTs. This enables us to both identify the impact of particular fabrication steps on the observed SOT symmetries and directions, and give suggestions for their underlying microscopic mechanisms. Furthermore, we highlight recent progress of the theoretical work on SOTs using TMD heterostructures and propose future research directions. △ Less

Submitted 13 October, 2020; v1 submitted 8 September, 2020; originally announced September 2020.

Comments: 14 pages, 1 figure, 1 table

Journal ref: Front. Mater. 7, 594771 (2020)

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Authors: Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimaraes

Abstract: Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-di… ▽ More Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence. △ Less

Submitted 20 August, 2020; originally announced August 2020.