-
Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications
Authors:
Nikolaos Aspiotis,
Katrina Morgan,
Benjamin März,
Knut Müller-Caspary,
Martin Ebert,
Chung-Che Huang,
Daniel W. Hewak,
Sayani Majumdar,
Ioannis Zeimpekis
Abstract:
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptak…
▽ More
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.
△ Less
Submitted 19 March, 2022;
originally announced March 2022.
-
Non-volatile programmable silicon photonics using an ultralow loss Sb$_2$Se$_3$ phase change material
Authors:
Matthew Delaney,
Ioannis Zeimpekis,
Han Du,
Xingzhao Yan,
Mehdi Banakar,
David J. Thomson,
Daniel W. Hewak,
Otto L. Muskens
Abstract:
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the…
▽ More
Adaptable, reconfigurable and programmable are key functionalities for the next generation of silicon-based photonic processors, neural and quantum networks. Phase change technology offers proven non-volatile electronic programmability, however the materials used to date have shown prohibitively high optical losses which are incompatible with integrated photonic platforms. Here, we demonstrate the capability of the previously unexplored material Sb$_2$Se$_3$ for ultralow-loss programmable silicon photonics. The favorable combination of large refractive index contrast and ultralow losses seen in Sb$_2$Se$_3$ facilitates an unprecedented optical phase control exceeding 10$π$ radians in a Mach-Zehnder interferometer. To demonstrate full control over the flow of light, we introduce nanophotonic digital patterning as a conceptually new approach at a footprint orders of magnitude smaller than state of the art interferometer meshes. Our approach enables a wealth of possibilities in high-density reconfiguration of optical functionalities on silicon chip.
△ Less
Submitted 10 January, 2021;
originally announced January 2021.
-
Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
Authors:
M. Hughes,
D. W. Hewak,
R. J. Curry
Abstract:
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various do** concentrations between 0.01 and 1% (molar). We demonstrate that below a critical do** concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)\b{eta}], where τ is the fluorescence lifetime and \b{eta…
▽ More
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various do** concentrations between 0.01 and 1% (molar). We demonstrate that below a critical do** concentration the fluorescence decay profile can be fitted with the stretched exponential function: exp[-(t/τ)\b{eta}], where τ is the fluorescence lifetime and \b{eta} is the stretch factor. At low concentrations the lifetime for vanadium and titanium doped GLS was 30 μs and 67 μs respectively. We validate the use of the stretched exponential model and discuss the possible microscopic phenomenon it arises from. We also demonstrate that above a critical do** concentration of around 0.1% (molar) the fluorescence decay profile can be fitted with the double exponential function: a*exp-(t/τ1)+ b*exp-(t/τ2), where τ1and τ2 are characteristic fast and slow components of the fluorescence decay profile, for vanadium the fast and slow components are 5 μs and 30 μs respectively and for titanium they are 15 μs and 67 μs respectively. We also show that the fluorescence lifetime of vanadium and titanium at low concentrations in the oxide rich host gallium lanthanum oxy-sulphide (GLSO) is 43 μs and 97 μs respectively, which is longer than that in GLS. From this we deduce that vanadium and titanium fluorescing ions preferentially substitute into high efficiency oxide sites until at a critical concentration they become saturated and low efficiency sulphide sites start to be filled.
△ Less
Submitted 20 November, 2014;
originally announced November 2014.
-
n-Type Chalcogenides by Ion Implantation
Authors:
Mark A. Hughes,
Yanina Fedorenko,
Behrad Gholipour,
** Yao,
Tae-Hoon Lee,
Russell M. Gwilliam,
Kevin P. Homewood,
Steven Hinder,
Daniel W. Hewak,
Stephen R. Elliott,
Richard J. Curry
Abstract:
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoe…
▽ More
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb do** concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type do** of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical do** effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
△ Less
Submitted 20 November, 2014;
originally announced November 2014.
-
Electrical properties of Bi-implanted amorphous chalcogenide films
Authors:
Yanina G. Fedorenko,
Mark A. Hughes,
Julien L. Colaux,
C. Jeynes,
Russell M. Gwilliam,
Kevin Homewood,
B. Gholipour,
J. Yao,
Daniel W. Hewak,
Tae-Hoon Lee,
Stephen R. Elliott,
Richard J. Curry
Abstract:
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films…
▽ More
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.
△ Less
Submitted 9 December, 2014; v1 submitted 21 October, 2014;
originally announced October 2014.
