Showing 1–26 of 26 results for author: Herranz, G

Stoichiometric control of electron mobility and 2D superconductivity at LaAlO$_3$-SrTiO$_3$ interfaces

Authors: Gyanendra Singh, Roger Guzman, Guilhem Saïz, Wu Zhou, Jaume Gazquez, Jordi Fraxedas, Fereshteh Masoudinia, Dag Winkler, Tord Claeson, Nicolas Bergeal, Gervasi Herranz, Alexei Kalaboukhov

Abstract: SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO… ▽ More SrTiO$_3$-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. We further show that the carrier density, mobility, and formation of the superconducting condensate are controlled by the fine-tuning of La/Al chemical ratio in the LAO film. Interestingly, we find a region in the superconducting phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with previous experimental investigations. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems △ Less

Submitted 25 January, 2024; originally announced January 2024.

Absence of $3a_0$ Charge Density Wave Order in the Infinite Layer Nickelates

Authors: C. T. Parzyck, N. K. Gupta, Y. Wu, V. Anil, L. Bhatt, M. Bouliane, R. Gong, B. Z. Gregory, A. Luo, R. Sutarto, F. He, Y. -D. Chuang, T. Zhou, G. Herranz, L. F. Kourkoutis, A. Singer, D. G. Schlom, D. G. Hawthorn, K. M. Shen

Abstract: A hallmark of many unconventional superconductors is the presence of many-body interactions which give rise to broken symmetry states intertwined with superconductivity. Recent resonant soft x-ray scattering experiments report commensurate $3a_0$ charge density wave order in the infinite layer nickelates, which has important implications regarding the universal interplay between charge order and s… ▽ More A hallmark of many unconventional superconductors is the presence of many-body interactions which give rise to broken symmetry states intertwined with superconductivity. Recent resonant soft x-ray scattering experiments report commensurate $3a_0$ charge density wave order in the infinite layer nickelates, which has important implications regarding the universal interplay between charge order and superconductivity in both the cuprates and nickelates. Here, we present x-ray scattering and spectroscopy measurements on a series of NdNiO$_{2+x}$ samples which reveal that the signatures of charge density wave order are absent in fully reduced, single-phase NdNiO$_2$. The $3a_0$ superlattice peak instead originates from a partially reduced impurity phase where excess apical oxygens form ordered rows with 3 unit cell periodicity. The absence of any observable charge density wave order in NdNiO$_2$ highlights a crucial difference between the phase diagrams of the cuprate and nickelate superconductors. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: Main Text: 8 pages, 4 figures. Supplemental: 12 pages, 12 figures

Jahn-Teller states mixed by spin-orbit coupling in an electromagnetic field

Authors: Alejandro S. Miñarro, Gervasi Herranz

Abstract: Spin-orbit coupling plays a pivotal role in condensed matter physics. For instance, spin-orbit interactions affect the magnetization and transport dynamics in solids, while spins and momenta are locked in topological matter. Alternatively, spin-orbit entanglement may play an important role in exotic phenomena, like quantum spin liquids in 4d and 5d systems. An interesting question is how electroni… ▽ More Spin-orbit coupling plays a pivotal role in condensed matter physics. For instance, spin-orbit interactions affect the magnetization and transport dynamics in solids, while spins and momenta are locked in topological matter. Alternatively, spin-orbit entanglement may play an important role in exotic phenomena, like quantum spin liquids in 4d and 5d systems. An interesting question is how electronic states mixed by spin orbit coupling interact with electromagnetic fields, which may hold potential to tune their properties and reveal interesting physics. Motivated by our recent discovery of large gyrotropic signals in some Jahn-Teller manganites, here we explore the interaction of light with spin-mixed states in a d4 transition metal. We show that spin-orbit mixing enables electronic transitions that are sensitive to circularly polarized light, giving rise to a gyrotropic response that increases with spin-orbit coupling. Interestingly, photoexcited transitions that involve spin reversal are behind such gyrotropic resonances. Additionally, we find that the interaction with the electromagnetic field depends strongly on the relative orientation of the propagation of light with respect to Jahn-Teller distortions and spin quantization. We suggest that such interactions offer the opportunity to use electromagnetic waves at optical wavelengths to entangle orbital and spin degrees of freedom. Our approach, which includes a group-theoretical treatment of spin-orbit coupling, has wide applicability and provides a versatile tool to explore the interaction of electromagnetic fields with electronic states in transition metals with arbitrary spin-orbit coupling strength and pointgroup symmetries. △ Less

Submitted 13 July, 2022; originally announced July 2022.

Comments: 24 pages, 8 figures

Dynamic control of octahedral rotation in perovskites by defect engineering

Authors: Jiahui Jia, Xu He, Arsalan Akhtar, Gervasi Herranz, Miguel Pruneda

Abstract: Engineering oxygen octahedra rotation patterns in $ABO_3$ perovskites is a powerful route to design functional materials. Here we propose a strategy that exploits point defects that create local electric dipoles and couple to the oxygen sublattice, enabling direct actuation on the rotational degrees of freedom. This approach, which relies on substituting an $A$ site with a smaller ion, paves a way… ▽ More Engineering oxygen octahedra rotation patterns in $ABO_3$ perovskites is a powerful route to design functional materials. Here we propose a strategy that exploits point defects that create local electric dipoles and couple to the oxygen sublattice, enabling direct actuation on the rotational degrees of freedom. This approach, which relies on substituting an $A$ site with a smaller ion, paves a way to couple dynamically octahedra rotations to external electric fields. A common antisite defect, $\mathrm{Al_{La}}$ in rhombohedral LaAlO$_3$ is taken as a prototype to validate the idea, with atomistic density functional theory calculations supported with an effective lattice model to simulate the dynamics of switching of the local rotational degrees of freedom to long distances. Our simulations provide an insight of the main parameters that govern the operation of the proposed mechanism, and allow to define guidelines for screening other systems where this approach could be used for tuning the properties of the host material. △ Less

Submitted 9 July, 2022; v1 submitted 7 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. B 105, 224112, 2022

Non-collinear and strongly asymmetric polar moments at back-gated SrTiO3 interfaces

Authors: Fryderyk Lyzwa, Yurii G. Pashkevich, Premysl Marsik, Andrei Sirenko, Andrew Chan, Benjamin P. P. Mallett, Meghdad Yazdi-Rizi, Bing Xu, Luis M. Vicente-Arche, Diogo C. Vaz, Gervasi Herranz, Maximilien Cazayous, Pierre Hemme, Katrin Fürsich, Matteo Minola, Bernhard Keimer, Manuel Bibes, Christian Bernhard

Abstract: The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined e… ▽ More The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as electrical modulation of the spin-orbit Rashba coupling for spin-charge conversion. These findings raise important questions about the origin of the confined electrons as well as the mechanisms that govern the interfacial electric field. Here we use infrared ellipsometry and confocal Raman spectroscopy to show that an anomalous polar moment is induced at the interface that is non-collinear, highly asymmetric and hysteretic with respect to the vertical gate electric field. Our data indicate that an important role is played by the electromigration of oxygen vacancies and their clustering at the antiferrodistortive domain boundaries of SrTiO3, which generates local electric and possibly also flexoelectric fields and subsequent polar moments with a large lateral component. Our results open new perspectives for the defect engineering of lateral devices with strongly enhanced and hysteretic local electric fields that can be manipulated with various other parameters, like strain, temperature, or photons. △ Less

Submitted 14 September, 2021; originally announced September 2021.

Journal ref: Communications Physics 5, 133 (2022)

Giant topological Hall effect in correlated oxide thin films

Authors: Lorenzo Vistoli, Wenbo Wang, Anke Sander, Qiuxiang Zhu, Blai Casals, Rafael Cichelero, Agnès Barthélémy, Stéphane Fusil, Gervasi Herranz, Sergio Valencia, Radu Abrudan, Eugen Weschke, Kazuki Nakazawa, Hiroshi Kohno, Jacobo Santamaria, Weida Wu, Vincent Garcia, Manuel Bibes

Abstract: Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in t… ▽ More Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low do**, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields. △ Less

Submitted 19 September, 2019; originally announced September 2019.

Comments: Contact author for a reprint of the final version published in Nature Physics

Journal ref: Nature Physics 15, 67 (2019)

Single-band to two-band superconductivity transition in two-dimensional oxide interfaces

Authors: G. Singh, A. Jouan, G. Herranz, M. Scigaj, F. Sanchez, L. Benfatto, S. Caprara, M. Grilli, G. Saiz, F. Couedo, C. Feuillet-Palma, J. Lesueur, N. Bergeal

Abstract: In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic do**. However, the presence of multiple superconducting condensates i… ▽ More In multiorbital materials, superconductivity can exhibit new exotic forms that include several coupled condensates. In this context, quantum confinement in two-dimensional superconducting oxide interfaces offers new degrees of freedom to engineer the band structure and selectively control 3d-orbitals occupancy by electrostatic do**. However, the presence of multiple superconducting condensates in these systems has not yet been demonstrated. Here, we use resonant microwave transport to extract the superfluid stiffness of the (110)-oriented LaAlO3/SrTiO3 interface in the entire phase diagram. We evidence a transition from single-band to two-band superconductivity driven by electrostatic do**, which we relate to the filling of the different 3d-orbitals based on numerical simulations of the quantum well. Interestingly, the superconducting transition temperature decreases while the second band is populated, which challenges the Bardeen-Cooper-Schrieffer theory. To explain this behaviour, we propose that the superconducting order parameters associated with the two bands have opposite signs with respect to each other. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Infrared ellipsometry study of the photo-generated charge carriers at the (001) and (110) surfaces of SrTiO$_3$ crystals and the interface of corresponding LaAlO$_3$/SrTiO$_3$ heterostructures

Authors: M. Yazdi-Rizi, P. Marsik, B. P. P. Mallett, K. Sen, A. Cerreta, A. Dubroka, M. Scigaj, F. Sánchez, G. Herranz, C. Bernhard

Abstract: With infrared (IR) ellipsometry and DC resistance measurements we investigated the photo-do** at the (001) and (110) surfaces of SrTiO$_3$ (STO) single crystals and at the corresponding interfaces of LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures. In the bare STO crystals we find that the photo-generated charge carriers, which accumulate near the (001) surface, have a similar depth profile and s… ▽ More With infrared (IR) ellipsometry and DC resistance measurements we investigated the photo-do** at the (001) and (110) surfaces of SrTiO$_3$ (STO) single crystals and at the corresponding interfaces of LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures. In the bare STO crystals we find that the photo-generated charge carriers, which accumulate near the (001) surface, have a similar depth profile and sheet carrier concentration as the confined electrons that were previously observed in LAO/STO (001) heterostructures. A large fraction of these photo-generated charge carriers persist at low temperature at the STO (001) surface even after the UV light has been switched off again. These persistent charge carriers seem to originate from oxygen vacancies that are trapped at the structural domain boundaries which develop below the so-called antiferrodistortive transition at T* = 105 K. This is most evident from a corresponding photo-do** study of the DC transport in STO (110) crystals for which the concentration of these domain boundaries can be modified by applying a weak uniaxial stress. The oxygen vacancies and their trap** by defects are also the source of the electrons that are confined to the interface of LAO/STO (110) heterostructures which likely do not have a polar discontinuity as in LAO/STO (001). In the former, the trap** and clustering of the oxygen vacancies also has a strong influence on the anisotropy of the charge carrier mobility. We show that this anisotropy can be readily varied and even inverted by various means, such as a gentle thermal treatment, UV irradiation, or even a weak uniaxial stress. Our experiments suggest that extended defects, which develop over long time periods (of weeks to months), can strongly influence the response of the confined charge carriers at the LAO/STO (110) interface. △ Less

Submitted 8 February, 2017; v1 submitted 31 January, 2017; originally announced February 2017.

Comments: 12 pages, 6 figures, 4 tables

Journal ref: Phys. Rev. B 95, 195107 (2017)

Multiple strain-induced phase transitions in LaNiO3 thin films

Authors: M. C. Weber, M. Guennou, N. Dix, D. Pesquera, F. Sánchez, G. Herranz, J. Fontcuberta, L. López-Conesa, S. Estradé, F. Peiró, J. Iñiguez, J. Kreisel

Abstract: Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compress… ▽ More Strain effects on epitaxial thin films of LaNiO3 grown on different single crystalline substrates are studied by Raman scattering and first-principles simulation. New Raman modes, not present in bulk or fully-relaxed films, appear under both compressive and tensile strains, indicating symmetry reductions. Interestingly, the Raman spectra and the underlying crystal symmetry for tensile and compressively strained films are different. Extensive map** of LaNiO3 phase stability is addressed by simulations, showing that a variety of crystalline phases are indeed stabilized under strain which may impact the electronic orbital hierarchy. The calculated Raman frequencies reproduce the principal features of the experimental spectra, supporting the validity of the multiple strain-driven structural transitions predicted by the simulations. △ Less

Submitted 2 March, 2016; originally announced March 2016.

Comments: 18 pages, 7 figures

Giant Optical Polarization Rotation Induced by Spin-Orbit Coupling in Polarons

Authors: Blai Casals, Rafael Cichelero, Pablo García Fernández, Javier Junquera, David Pesquera, Mariano Campoy-Quiles, Ingrid C. Infante, Florencio Sánchez, Josep Fontcuberta, Gervasi Herranz

Abstract: We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected ph… ▽ More We have uncovered a giant gyrotropic magneto-optical response for doped ferromagnetic manganite La2/3Ca1/3MnO3 around the near room-temperature paramagnetic-to-ferromagnetic transition. At odds with current wisdom, where this response is usually assumed to be fundamentally fixed by the electronic band structure, we point to the presence of small polarons as the driving force for this unexpected phenomenon. We explain the observed properties by the intricate interplay of mobility, Jahn-Teller effect and spin-orbit coupling of small polarons. As magnetic polarons are ubiquitously inherent to many strongly correlated systems, our results provide an original, general pathway towards the generation of gigantic gyrotropic responses that can be harnessed for nonreciprocal devices that exploit the polarization of light. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. Lett. 117, 026401 (2016)

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

Authors: Mateusz Scigaj, Jaume Gazquez, Maria Varela, Josep Fontcuberta, Gervasi Herranz, Florencio Sanchez

Abstract: Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorp… ▽ More Interfaces between (110) and (111)SrTiO3 (STO) single crystalline substrates and amorphous oxide layers, LaAlO3 (a-LAO), Y:ZrO2 (a-YSZ), and SrTiO3 (a-STO) become conducting above a critical thickness tc. Here we show that tc for a-LAO is not depending on the substrate orientation, i.e. tc (a-LAO/(110)STO) ~ tc(a-LAO/(111)STO) interfaces, whereas it strongly depends on the composition of the amorphous oxide: tc(a-LAO/(110)STO) < tc(a-YSZ/(110)STO) < tc(a-STO/(110)STO). It is concluded that the formation of oxygen vacancies in amorphous-type interfaces is mainly determined by the oxygen affinity of the deposited metal ions, rather than orientational-dependent enthalpy vacancy formation and diffusion. Scanning transmission microscopy characterization of amorphous and crystalline LAO/STO(110) interfaces shows much higher amount of oxygen vacancies in the former, providing experimental evidence of the distinct mechanism of conduction in these interfaces. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Journal ref: Solid State Ionics 281, 68 (2015)

Laterally-confined two-dimensional electron gases in self-patterned LaAlO3/SrTiO3 interfaces

Authors: M. Foerster, R. Bachelet, V. Laukhin, J. Fontcuberta, G. Herranz, F. Sanchez

Abstract: A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We… ▽ More A bottom-up process has been used to engineer the LaAlO3/SrTiO3 interface atomic composition and locally confine the two-dimensional electron gas to lateral sizes in the order of 100 nm. This is achieved by using SrTiO3(001) substrate surfaces with self-patterned chemical termination, which is replicated by the LaAlO3 layer, resulting in a modulated LaO/TiO2 and AlO2/SrO interface composition. We demonstrate the confinement of the conducting interface forming either long-range ordered nanometric stripes or isolated regions. Our results demonstrate that engineering the interface chemical termination is a suitable strategy towards nanoscale lateral confinement of two-dimensional high-mobility systems. △ Less

Submitted 22 January, 2014; originally announced January 2014.

Journal ref: Applied Physics Letters 100, 231607 (2012)

Orientational tuning of the 2D-superconductivity in LaAlO3/SrTiO3 interfaces

Authors: G. Herranz, N. Bergeal, J. Lesueur, J. Gazquez, M. Scigaj, N. Dix, F. Sanchez, J. Fontcuberta

Abstract: The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significant… ▽ More The discovery of a two-dimensional (2D) electron gas at the (110)-oriented LaAlO3/SrTiO3 in- terface provided us with the opportunity to probe the effect of crystallographic orientation and the ensuing electronic reconstructions on interface properties beyond the conventional (001)-orientation. At temperatures below 200 mK, we have measured 2D superconductivity with a spatial extension significantly larger (d approx. 24 - 30 nm) than previously reported for (001)-oriented LaAlO3/SrTiO3 interfaces (d approx. 10 nm). The more extended superconductivity brings about the absence of violation of the Pauli paramagnetic limit for the upper critical fields, signaling the distinctive nature of the electronic structure of the (110)-oriented interface with respect to their (001)-counterparts △ Less

Submitted 10 May, 2013; originally announced May 2013.

Comments: 5 pages, 5 figures

X-ray interference effects on the determination of structural data in ultrathin La2/3Sr1/3MnO3 epitaxial thin films

Authors: D. Pesquera, R. Bachelet, G. Herranz, J. Fontcuberta, X. Marti, V. Holy

Abstract: We analyze X-ray diffraction data used to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, data analysis must explicitly consider the distinct phase of the diffracted waves by substrate an… ▽ More We analyze X-ray diffraction data used to extract cell parameters of ultrathin films on closely matching substrates. We focus on epitaxial La2/3Sr1/3MnO3 films grown on (001) SrTiO3 single crystalline substrates. It will be shown that, due to extremely high structural similarity of film and substrate, data analysis must explicitly consider the distinct phase of the diffracted waves by substrate and films to extract reliable unit cell parameters. The implications of this finding for the understanding of strain effects in ultrathin films and interfaces will be underlined △ Less

Submitted 28 January, 2013; originally announced January 2013.

Journal ref: Appl. Phys. Lett. 99, 221901 (2011)

High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces

Authors: Gervasi Herranz, Florencio Sánchez, Nico Dix, Mateusz Scigaj, Josep Fontcuberta

Abstract: In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral… ▽ More In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces appear to suit hosting 2DEL is intriguing and challenges the understanding of these emerging properties not existing in bulk. Indeed, only the neutral TiO2 surface of (001)SrTiO3 has been shown to sustain 2DEL. We show that this restriction can be surpassed: (110) and (111) surfaces of SrTiO3 interfaced with epitaxial LaAlO3 layers, above a critical thickness, display 2DEL transport with mobilities similar to those of (001)SrTiO3. Moreover we show that epitaxial interfaces are not a prerequisite: conducting (110) interfaces with amorphous LaAlO3 and other oxides can also be prepared. These findings open a new perspective both for materials research and for elucidating the ultimate microscopic mechanism of carrier do**. △ Less

Submitted 30 October, 2012; originally announced October 2012.

Comments: Published in Scientific Reports (open access jounal of the Nature Publishing Group)

Journal ref: Scientific Reports 2,758 (2012)

Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3

Authors: A. F. Santander-Syro, O. Copie, T. Kondo, F. Fortuna, S. Pailhes, R. Weht, X. G. Qiu, F. Bertran, A. Nicolaou, A. Taleb-Ibrahimi, P. Le Fevre, G. Herranz, M. Bibes, Y. Apertet, P. Lecoeur, M. J. Rozenberg, A. Barthelemy

Abstract: Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of t… ▽ More Similar to silicon that is the basis of conventional electronics, strontium titanate (SrTiO3) is the bedrock of the emerging field of oxide electronics. SrTiO3 is the preferred template to create exotic two-dimensional (2D) phases of electron matter at oxide interfaces, exhibiting metal-insulator transitions, superconductivity, or large negative magnetoresistance. However, the physical nature of the electronic structure underlying these 2D electron gases (2DEGs) remains elusive, although its determination is crucial to understand their remarkable properties. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that there is a highly metallic universal 2DEG at the vacuum-cleaved surface of SrTiO3, independent of bulk carrier densities over more than seven decades, including the undoped insulating material. This 2DEG is confined within a region of ~5 unit cells with a sheet carrier density of ~0.35 electrons per a^2 (a is the cubic lattice parameter). We unveil a remarkable electronic structure consisting on multiple subbands of heavy and light electrons. The similarity of this 2DEG with those reported in SrTiO3-based heterostructures and field-effect transistors suggests that different forms of electron confinement at the surface of SrTiO3 lead to essentially the same 2DEG. Our discovery provides a model system for the study of the electronic structure of 2DEGs in SrTiO3-based devices, and a novel route to generate 2DEGs at surfaces of transition-metal oxides. △ Less

Submitted 17 September, 2010; originally announced September 2010.

Comments: 28 pages, 9 figures

Dynamical response and confinement of the electrons at the LaAlO3/SrTiO3 interface

Authors: A. Dubroka, M. Roessle, K. W. Kim, V. K. Malik, L. Schulz, S. Thiel, C. W. Schneider, J. Mannhart, G. Herranz, O. Copie, M. Bibes, A. Barthelemy, C. Bernhard

Abstract: With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also det… ▽ More With infrared ellipsometry and transport measurements we investigated the electrons at the interface between LaAlO3 and SrTiO3. We obtained a sheet carrier density of Ns~5-9x 10E13 cm^-2, an effective mass of m*~3m_e, and a strongly frequency dependent mobility. The latter are similar as in bulk SrTi1-xNbxO3 and therefore suggestive of polaronic correlations of the confined carriers. We also determined the vertical density profile which has a strongly asymmetric shape with a rapid initial decay over the first 2 nm and a pronounced tail that extends to about 11 nm. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 4 pages, 3 figures, 1 EPAPS file (3 figures)

Journal ref: Phys. Rev. Lett. 104, 156807 (2010)

Towards two-dimensional metallic behavior at LaAlO3/SrTiO3 interfaces

Authors: O. Copie, V. Garcia, C. Bodefeld, C. Carretero, M. Bibes, G. Herranz, E. Jacquet, J. -L. Maurice, B. Vinter, S. Fusil, K. Bouzehouane, H. Jaffres, A. Barthelemy

Abstract: Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into a… ▽ More Using a low-temperature conductive-tip atomic force microscope in cross-section geometry we have characterized the local transport properties of the metallic electron gas that forms at the interface between LaAlO3 and SrTiO3. At low temperature, we find that the carriers do not spread away from the interface but are confined within ~10 nm, just like at room temperature. Simulations taking into account both the large temperature and electric-field dependence of the permittivity of SrTiO3 predict a confinement over a few nm for sheet carrier densities larger than ~6 10^13 cm-2. We discuss the experimental and simulations results in terms of a multi-band carrier system. Remarkably, the Fermi wavelength estimated from Hall measurements is ~16 nm, indicating that the electron gas in on the verge of two-dimensionality. △ Less

Submitted 13 May, 2009; originally announced May 2009.

Comments: Accepted for publication in Physical Review Letters

Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

Authors: Jean-Luc Maurice, Gervasi Herranz, Christian Colliex, Isabelle Devos, Cécile Carrétéro, Agnès Barthelemy, Karim Bouzehouane, Stéphane Fusil, Dominique Imhoff, Éric Jacquet, François Jomard, Dominique Ballutaud, Mario Basletic

Abstract: At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended do**. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope,… ▽ More At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended do**. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions. △ Less

Submitted 3 December, 2007; originally announced December 2007.

Comments: 6 pages

Journal ref: Europhysics Letters (EPL) 82 (2008) 17003

Map** the Spatial Distribution of Charge Carriers in LaAlO3/SrTiO3 Heterostructures

Authors: M. Basletic, J. -L. Maurice, C. Carretero, G. Herranz, O. Copie, M. Bibes, E. Jacquet, K. Bouzehouane, S. Fusil, A. Barthelemy

Abstract: At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of… ▽ More At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface, some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile map**s collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system. △ Less

Submitted 31 March, 2008; v1 submitted 6 October, 2007; originally announced October 2007.

Comments: This updated version contains new experimental data

High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives

Authors: G. Herranz, M. Basletic, M. Bibes, C. Carretero, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, A. Hamzic, J. -M. Broto, A. Barthelemy, A. Fert

Abstract: We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experi… ▽ More We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics. △ Less

Submitted 19 April, 2007; originally announced April 2007.

Comments: 4 pages, 4 figures. Accepted for publication in Phys. Rev. Lett

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Authors: H. Bea, M. Bibes, S. Cherifi, F. Nolting, B. Warot-Fonrose, S. Fusil, G. Herranz, C. Deranlot, E. Jacquet, K. Bouzehouane, A. Barthelemy

Abstract: We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferro… ▽ More We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training. △ Less

Submitted 27 September, 2006; v1 submitted 21 July, 2006; originally announced July 2006.

Comments: 15 pages, 4 figures

Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures

Authors: G. Herranz, M. Basletic, M. Bibes, C. Carretero, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, J. -L. Maurice, A. Hamzic, J. -P. Contour, A. Barthelemy, A. Fert

Abstract: LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigat… ▽ More LaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the do** of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices. △ Less

Submitted 7 June, 2006; originally announced June 2006.

Comments: 17 pages, 3 figures

Full oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor

Authors: G. Herranz, M. Basletic, M. Bibes, R. Ranchal, A. Hamzic, E. Tafra, K. Bouzehouane, E. Jacquet, J. -P. Contour, A. Barthelemy, A. Fert

Abstract: We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransp… ▽ More We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ~ 10 ps. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length. △ Less

Submitted 21 December, 2005; originally announced December 2005.

Comments: to appear in Phys. Rev. B

Combining half-metals and multiferroics into epitaxial heterostructures for spintronics

Authors: H. Bea, M. Bibes, M. Sirena, G. Herranz, K. Bouzehouane, E. Jacquet, S. Fusil, P. Paruch, M. Dawber, J. -P. Contour, A. Barthelemy

Abstract: We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromag… ▽ More We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which results in unit-cell smooth surfaces. We show that both materials keep their properties inside the heterostructures, i.e. the LSMO layer (11 nm thick) is ferromagnetic with a Curie temperature of ~330K, while the BFO films shows ferroelectricity down to very low thicknesses (5 nm). Conductive-tip atomic force microscope map**s of BFO/LSMO bilayers for different BFO thicknesses reveal a high and homogeneous resistive state for the BFO film that can thus be used as a ferroelectric tunnel barrier in tunnel junctions based on a half-metal. △ Less

Submitted 24 October, 2005; originally announced October 2005.

Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization

Authors: G. Herranz, R. Ranchal, M. Bibes, H. Jaffres, E. Jacquet, J. L. Maurice, K. Bouzehouane, F. Wyczisk, E. Tafra, M. Basletic, A. Hamzic, C. Colliex, J. -P. Contour, A. Barthelemy, A. Fert

Abstract: We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO com… ▽ More We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics. △ Less

Submitted 11 August, 2005; originally announced August 2005.