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Direct microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions
Authors:
M. Hinderling,
S. C. ten Kate,
M. Coraiola,
D. Z. Haxell,
M. Stiefel,
M. Mergenthaler,
S. Paredes,
S. W. Bedell,
D. Sabonis,
F. Nichele
Abstract:
We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were co…
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We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $Δ^{*}\approx48~\mathrm{μeV}$ and transmission $τ\approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6~\mathrm{MHz}$. A device with junction length of $1~μm$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.
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Submitted 6 March, 2024;
originally announced March 2024.
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Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction
Authors:
M. Coraiola,
A. E. Svetogorov,
D. Z. Haxell,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
J. C. Cuevas,
W. Belzig,
F. Nichele
Abstract:
We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and…
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We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect, with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of $|η|\approx34\%$, is widely tunable - both in amplitude and sign - as a function of magnetic fluxes and gate voltages. Our observations are supported by a circuit model of three parallel Josephson junctions with non-sinusoidal current-phase relation. With respect to conventional Josephson interferometers, phase-tunable multiterminal Josephson junctions enable large diode efficiencies in structurally symmetric devices, where local magnetic fluxes break both time-reversal and spatial-inversion symmetries. Our work establishes a pathway to develop Josephson diodes with wide-range tunability and that do not rely on exotic materials or externally applied magnetic fields.
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Submitted 11 December, 2023; v1 submitted 7 December, 2023;
originally announced December 2023.
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Flip-chip-based fast inductive parity readout of a planar superconducting island
Authors:
M. Hinderling,
S. C. ten Kate,
D. Z. Haxell,
M. Coraiola,
S. Paredes,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
D. Sabonis,
F. Nichele
Abstract:
Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time par…
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Properties of superconducting devices depend sensitively on the parity (even or odd) of the quasiparticles they contain. Encoding quantum information in the parity degree of freedom is central in several emerging solid-state qubit architectures. Yet, accurate, non-destructive, and time-resolved parity measurement is a challenging and long-standing issue. Here we report on control and real-time parity measurement in a superconducting island embedded in a superconducting loop and realized in a hybrid two-dimensional heterostructure using a microwave resonator. Device and readout resonator are located on separate chips, connected via flip-chip bonding, and couple inductively through vacuum. The superconducting resonator detects the parity-dependent circuit inductance, allowing for fast and non-destructive parity readout. We resolved even and odd parity states with signal-to-noise ratio SNR $\approx3$ with an integration time of $20~μ$s and detection fidelity exceeding 98%. Real-time parity measurement showed state lifetime extending into millisecond range. Our approach will lead to better understanding of coherence-limiting mechanisms in superconducting quantum hardware and provide novel readout schemes for hybrid qubits.
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Submitted 13 July, 2023;
originally announced July 2023.
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Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions
Authors:
M. Coraiola,
D. Z. Haxell,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hy…
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Harnessing spin and parity degrees of freedom is of fundamental importance for the realization of emergent quantum devices. Nanostructures embedded in superconductor--semiconductor hybrid materials offer novel and yet unexplored routes for addressing and manipulating fermionic modes. Here we spectroscopically probe the two-dimensional band structure of Andreev bound states in a phase-controlled hybrid three-terminal Josephson junction. Andreev bands reveal spin-degeneracy breaking, with level splitting in excess of 9 GHz, and zero-energy crossings associated to ground state fermion parity transitions, in agreement with theoretical predictions. Both effects occur without the need of external magnetic fields or sizable charging energies and are tuned locally by controlling superconducting phase differences. Our results highlight the potential of multiterminal hybrid devices for engineering quantum states.
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Submitted 13 July, 2023;
originally announced July 2023.
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Zeeman and Orbital Driven Phase Transitions in Planar Josephson Junctions
Authors:
D. Z. Haxell,
M. Coraiola,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe…
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We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field, and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to ${\varphi_{0}=0.5π}$ which are consistent with a Zeeman field coupling to highly-transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit and orbital effects in InAs/Al JJs, giving new understanding to phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.
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Submitted 5 June, 2023; v1 submitted 2 June, 2023;
originally announced June 2023.
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Demonstration of nonlocal Josephson effect in Andreev molecules
Authors:
D. Z. Haxell,
M. Coraiola,
M. Hinderling,
S. C. ten Kate,
D. Sabonis,
A. E. Svetogorov,
W. Belzig,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the impl…
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We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode, with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current--phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates a nonlocal Josephson effect, and the implementation of a $\varphi_0$-junction which is tunable both electrostatically and magnetically. The anomalous phase shift was larger for shorter distances between the JJs and vanished for distances much longer than the superconducting coherence length. Results are consistent with the hybridization of ABSs, leading to the formation of an Andreev molecule. Our devices constitute a realization of a tunable superconducting phase source, and could enable new coupling schemes for hybrid quantum devices.
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Submitted 4 July, 2023; v1 submitted 1 June, 2023;
originally announced June 2023.
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Phase-engineering the Andreev band structure of a three-terminal Josephson junction
Authors:
M. Coraiola,
D. Z. Haxell,
D. Sabonis,
H. Weisbrich,
A. E. Svetogorov,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
J. C. Cuevas,
W. Belzig,
F. Nichele
Abstract:
In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure.…
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In hybrid Josephson junctions with three or more superconducting terminals coupled to a semiconducting region, Andreev bound states may form unconventional energy band structures, or Andreev matter, which are engineered by controlling superconducting phase differences. Here we report tunnelling spectroscopy measurements of three-terminal Josephson junctions realised in an InAs/Al heterostructure. The three terminals are connected to form two loops, enabling independent control over two phase differences and access to a synthetic Andreev band structure in the two-dimensional phase space. Our results demonstrate a phase-controlled Andreev molecule, originating from two discrete Andreev levels that spatially overlap and hybridise. Signatures of hybridisation are observed in the form of avoided crossings in the spectrum and band structure anisotropies in the phase space, all explained by a numerical model. Future extensions of this work could focus on addressing spin-resolved energy levels, ground state fermion parity transitions and Weyl bands in multiterminal geometries.
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Submitted 11 December, 2023; v1 submitted 28 February, 2023;
originally announced February 2023.
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Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
Authors:
E. Cheah,
D. Z. Haxell,
R. Schott,
P. Zeng,
E. Paysen,
S. C. ten Kate,
M. Coraiola,
M. Landstetter,
A. B. Zadeh,
A. Trampert,
M. Sousa,
H. Riel,
F. Nichele,
W. Wegscheider,
F. Krizek
Abstract:
In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures a…
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In-situ synthesised semiconductor/superconductor hybrid structures became an important material platform in condensed matter physics. Their development enabled a plethora of novel quantum transport experiments with focus on Andreev and Majorana physics. The combination of InAs and Al has become the workhorse material and has been successfully implemented in the form of one-dimensional structures and two-dimensional electron gases. In contrast to the well-developed semiconductor parts of the hybrid materials, the direct effect of the crystal nanotexture of Al films on the electron transport still remains unclear. This is mainly due to the complex epitaxial relation between Al and the semiconductor. We present a study of Al films on shallow InAs two-dimensional electron gas systems grown by molecular beam epitaxy, with focus on control of the Al crystal structure. We identify the dominant grain types present in our Al films and show that the formation of grain boundaries can be significantly reduced by controlled roughening of the epitaxial interface. Finally, we demonstrate that the implemented roughening does not negatively impact either the electron mobility of the two-dimensional electron gas or the basic superconducting properties of the proximitized system.
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Submitted 17 January, 2023;
originally announced January 2023.
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Flip-chip-based microwave spectroscopy of Andreev bound states in a planar Josephson junction
Authors:
M. Hinderling,
D. Sabonis,
S. Paredes,
D. Z. Haxell,
M. Coraiola,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
F. Nichele
Abstract:
We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modul…
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We demonstrate a flip-chip-based approach to microwave measurements of Andreev bound states in a gate-tunable planar Josephson junction using inductively-coupled superconducting low-loss resonators. By means of electrostatic gating, we present control of both the density and transmission of Andreev bound states. Phase biasing of the device shifted the resonator frequency, consistent with the modulation of supercurrent in the junction. Two-tone spectroscopy measurements revealed an isolated Andreev bound state consistent with an average induced superconducting gap of $184~\mathrm{μeV}$ and a gate-tunable transmission approaching $0.98$. Our results represent the feasibility of using the flip-chip technique to address and study Andreev bound states in planar Josephson junctions, and they give a promising path towards microwave applications with superconductor-semiconductor two-dimensional materials.
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Submitted 17 January, 2023; v1 submitted 21 December, 2022;
originally announced December 2022.
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Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet-Andreev states
Authors:
D. Z. Haxell,
M. Coraiola,
D. Sabonis,
M. Hinderling,
S. C. ten Kate,
E. Cheah,
F. Krizek,
R. Schott,
W. Wegscheider,
W. Belzig,
J. C. Cuevas,
F. Nichele
Abstract:
Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of condu…
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Light-matter interaction enables engineering of non-equilibrium quantum systems. In condensed matter, spatially and temporally cyclic Hamiltonians are expected to generate energy-periodic Floquet states, with properties inaccessible at thermal equilibrium. A recent work explored the tunnelling conductance of a planar Josephson junction under microwave irradiation, and interpreted replicas of conductance features as evidence of steady Floquet-Andreev states. Here we realise a similar device in a hybrid superconducting-semiconducting heterostructure, which utilises a tunnelling probe with gate-tunable transparency and allows simultaneous measurements of Andreev spectrum and current-phase relation of the planar Josephson junction. We show that, in our devices, spectral replicas in sub-gap conductance emerging under microwave irradiation are caused by photon assisted tunnelling of electrons into Andreev states. The current-phase relation under microwave irradiation is also explained by the interaction of Andreev states with microwave photons, without the need to invoke Floquet states. The techniques outlined in this study establish a baseline to distinguish photon assisted tunnelling from Floquet-Andreev states in mesoscopic devices, a crucial development towards understanding light-matter coupling in hybrid nanostructures.
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Submitted 16 June, 2023; v1 submitted 7 December, 2022;
originally announced December 2022.
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Ubiquitous Superconducting Diode Effect in Superconductor Thin Films
Authors:
Yasen Hou,
Fabrizio Nichele,
Hang Chi,
Alessandro Lodesani,
Yingying Wu,
Markus F. Ritter,
Daniel Z. Haxell,
Margarita Davydova,
Stefan Ilić,
Ourania Glezakou-Elbert,
Amith Varambally,
F. Sebastian Bergeret,
Akashdeep Kamra,
Liang Fu,
Patrick A. Lee,
Jagadeesh S. Moodera
Abstract:
The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in…
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The macroscopic coherence in superconductors supports dissipationless supercurrents which could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called superconducting (SC) diode effect. We demonstrate strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish non-volatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge/surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens door for novel technologies. Meanwhile, we reveal the ubiquity of Meissner screening effect induced SC diode effect in superconducting films, which should be eliminated with great care in the search of exotic superconducting states harboring finite-momentum Cooper pairing.
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Submitted 3 February, 2023; v1 submitted 18 May, 2022;
originally announced May 2022.
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Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs
Authors:
D. Z. Haxell,
E. Cheah,
F. Křížek,
R. Schott,
M. F. Ritter,
M. Hinderling,
W. Belzig,
C. Bruder,
W. Wegscheider,
H. Riel,
F. Nichele
Abstract:
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature…
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We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature $T^{*}$ is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate dam**, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, $T^*$ is also tuned by a magnetic flux.
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Submitted 21 November, 2022; v1 submitted 12 April, 2022;
originally announced April 2022.
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Semiconductor Epitaxy in Superconducting Templates
Authors:
M. F. Ritter,
H. Schmid,
M. Sousa,
P. Staudinger,
D. Z. Haxell,
M. A. Mueed,
B. Madon,
A. Pushp,
H. Riel,
F. Nichele
Abstract:
Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characteriz…
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Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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Submitted 12 August, 2021;
originally announced August 2021.
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On the Role of Out-of-Equilibrium Phonons in Gated Superconducting Switches
Authors:
M. F. Ritter,
N. Crescini,
D. Z. Haxell,
M. Hinderling,
H. Riel,
C. Bruder,
A. Fuhrer,
F. Nichele
Abstract:
Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric…
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Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric field and electron-current flow can be clearly separated. Our results show that suppression of superconductivity does not depend on the presence or absence of an electric field at the surface of the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained also when electrons are passed between two remote electrodes at a distance $d$ to the nanowire (with $d$ in excess of $1~\mathrm{μm}$). In the latter case, high-energy electrons decay into phonons which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. We show that this process involves a non-thermal phonon distribution, with marked differences from the loss of superconductivity due to Joule heating near the nanowire or an increase in the bath temperature.
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Submitted 3 June, 2021;
originally announced June 2021.
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A superconducting switch actuated by injection of high energy electrons
Authors:
M. F. Ritter,
A. Fuhrer,
D. Z. Haxell,
S. Hart,
P. Gumann,
H. Riel,
F. Nichele
Abstract:
Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting…
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Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from superconducting to resistive state is realized by tunneling of high-energy electrons from a gate contact through an insulating barrier. Operating gate currents are several orders of magnitude smaller than the nanowire critical source-drain current, effectively resulting in a voltage-controlled device. This superconducting switch is fast, self-resets from normal to superconducting state, and can operate in large magnetic fields, making it an ideal component for low-power cryogenic applications and quantum computing architectures.
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Submitted 1 May, 2020;
originally announced May 2020.